CN110109627A - 一种有效提升Nand闪存设备生产足容率的方法 - Google Patents
一种有效提升Nand闪存设备生产足容率的方法 Download PDFInfo
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- CN110109627A CN110109627A CN201910422599.0A CN201910422599A CN110109627A CN 110109627 A CN110109627 A CN 110109627A CN 201910422599 A CN201910422599 A CN 201910422599A CN 110109627 A CN110109627 A CN 110109627A
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- Prior art keywords
- block
- nand flash
- flash memory
- memory device
- ftl
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0617—Improving the reliability of storage systems in relation to availability
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0638—Organizing or formatting or addressing of data
- G06F3/064—Management of blocks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910422599.0A CN110109627A (zh) | 2019-05-21 | 2019-05-21 | 一种有效提升Nand闪存设备生产足容率的方法 |
Applications Claiming Priority (1)
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CN201910422599.0A CN110109627A (zh) | 2019-05-21 | 2019-05-21 | 一种有效提升Nand闪存设备生产足容率的方法 |
Publications (1)
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CN110109627A true CN110109627A (zh) | 2019-08-09 |
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CN201910422599.0A Pending CN110109627A (zh) | 2019-05-21 | 2019-05-21 | 一种有效提升Nand闪存设备生产足容率的方法 |
Country Status (1)
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CN (1) | CN110109627A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100228940A1 (en) * | 2009-03-04 | 2010-09-09 | Micron Technology, Inc. | Memory block management |
CN107797882A (zh) * | 2016-09-05 | 2018-03-13 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN108121669A (zh) * | 2016-11-29 | 2018-06-05 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN108614743A (zh) * | 2016-12-09 | 2018-10-02 | 北京京存技术有限公司 | 基于NAND flash的超级数据块处理方法和装置 |
US20180373605A1 (en) * | 2017-06-23 | 2018-12-27 | SK Hynix Inc. | Memory system and method of operating the same |
CN109445697A (zh) * | 2018-10-22 | 2019-03-08 | 郑州云海信息技术有限公司 | 一种组块方法及装置 |
-
2019
- 2019-05-21 CN CN201910422599.0A patent/CN110109627A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100228940A1 (en) * | 2009-03-04 | 2010-09-09 | Micron Technology, Inc. | Memory block management |
CN107797882A (zh) * | 2016-09-05 | 2018-03-13 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN108121669A (zh) * | 2016-11-29 | 2018-06-05 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN108614743A (zh) * | 2016-12-09 | 2018-10-02 | 北京京存技术有限公司 | 基于NAND flash的超级数据块处理方法和装置 |
US20180373605A1 (en) * | 2017-06-23 | 2018-12-27 | SK Hynix Inc. | Memory system and method of operating the same |
CN109445697A (zh) * | 2018-10-22 | 2019-03-08 | 郑州云海信息技术有限公司 | 一种组块方法及装置 |
Non-Patent Citations (2)
Title |
---|
HONG SEOK KIM等: "P-BMS: A Bad Block Management Scheme in Parallelized Flash Memory Storage Devices", 《ACM TRANSACTIONS ON EMBEDDED COMPUTING SYSTEMS》 * |
杨龙婴: "一种对NAND闪存硬件和闪存转换层软件的形式化建模", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 * |
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CB02 | Change of applicant information |
Address after: 518000 the first floor to the third floor of No.7 Xinfa East Road, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province. The business premises are set up in No.2 workshop, zone a, xinfengze Industrial Zone, Shangnan East Road Applicant after: SHENZHEN SHICHUANGYI ELECTRONIC Co.,Ltd. Address before: Baoan District Shenzhen City manhole street 518000 Guangdong Province on the South East New fortress Industrial Park A District 2 Applicant before: SHENZHEN SHICHUANGYI ELECTRONIC Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190809 |
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RJ01 | Rejection of invention patent application after publication |