CN110109307A - Array substrate and display panel - Google Patents
Array substrate and display panel Download PDFInfo
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- CN110109307A CN110109307A CN201910351893.7A CN201910351893A CN110109307A CN 110109307 A CN110109307 A CN 110109307A CN 201910351893 A CN201910351893 A CN 201910351893A CN 110109307 A CN110109307 A CN 110109307A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
This application provides a kind of array substrates, the array substrate includes underlay substrate, the multiple public electrodes being set on underlay substrate and the multiple transparent electrodes being set on the multiple public electrode, multiple public electrodes and multiple transparent electrodes are arranged in a one-to-one correspondence, and the transparent electrode and the corresponding public electrode partly overlap.The utility model has the advantages that transparent electrode changes the size of storage capacitance in the area of the projection overlapping of common electrode layer in different pixels unit in array substrate by changing, and then improvement display film flicker, display effect are low, the non-uniform phenomenon of picture.
Description
Technical field
This application involves field of display technology more particularly to a kind of array substrate and display panels.
Background technique
In liquid crystal display panel (Liquid Crystal Display, abbreviation LCD), the electric field for controlling liquid crystal molecule is
By the voltage difference (referred to as pixel voltage) between pixel electrode and public electrode come what is determined, but depositing due to parasitic capacitance
Will lead to the voltage of pixel electrode when closed in, grid signal, there are Vfth's (referred to as feed-trough voltage) before and after jumping
Deviation (feed-through effect).
Feed-trough voltage (vfth) is related to the variation of grid (gate) voltage and various coupled capacitors, i.e.,
Wherein, Vfth is feed-trough voltage, and Cgd is coupled capacitor between grid and drain electrode, Clc is liquid crystal capacitance, and Cst is
Storage capacitance, Vgh are grid line high voltage (also referred to as cut-in voltage), and Vgl is grid line low-voltage (also referred to as closing voltage).
The feed-trough voltage Δ Vp by cause pixel voltage polarity invert when imbalance so that the gray scale voltage benchmark of each pixel have it is several
Error, thus human eye is made to observe the phenomenon that display picture generates flashing, reduce the display quality of liquid crystal display panel.
In conclusion the display film flicker of the prior art, display effect are low, the display non-uniform problem of picture.
Summary of the invention
Array substrate provided by the present application, by transparent electrode layer in different pixels unit in change array substrate public
The area of the projection overlapping of electrode layer, changes the size of storage capacitance.
Technical solution provided by the present application is as follows:
A kind of array substrate, the array substrate include underlay substrate, the multiple public electrodes being set on underlay substrate,
And multiple transparent electrodes on the multiple public electrode are set to, multiple public electrodes and multiple transparent electrodes
It is arranged in a one-to-one correspondence, the transparent electrode and the corresponding public electrode partly overlap.
In array substrate provided herein, the transparent electrode and the corresponding public electrode partly overlap region
It is formed with storage capacitance, the storage capacitance is used to adjust the voltage of the public electrode.
In array substrate provided herein, along the extending direction of the scan line, the transparent electrode and institute
The overlapping area size of public electrode is stated in incremental or decline trend.
In array substrate provided herein, along the extending direction of the data line, the transparent electrode and institute
The overlapping area size of public electrode is stated in incremental or decline trend.
In array substrate provided herein, the overlapping area of the transparent electrode and the corresponding common electrode
Range is 1 square micron to 4 square microns.
In array substrate provided herein, the array substrate further include a plurality of transversely arranged scan line and
Pixel unit is provided with above the intersection region of a plurality of vertically disposed data line, the scan line and the data line.
In array substrate provided herein, the pixel unit includes: thin film transistor (TFT), the thin film transistor (TFT)
Grid connect a scan line, the source electrode of the thin film transistor (TFT) connects a data line；
Pixel electrode connects the drain electrode of the thin film transistor (TFT)；
The drain electrode of the grid, the thin film transistor (TFT) of the transparent electrode and the thin film transistor (TFT) or the pixel electrode
Same layer setting.
In array substrate provided herein, the public electrode is set to grid and the institute of the thin film transistor (TFT)
It states between underlay substrate, the drain electrode same layer of the transparent electrode and the thin film transistor (TFT) is arranged.
In array substrate provided herein, the transparent electrode is identical as the material of the public electrode, described
Material includes indium tin oxide.
The application also provides a kind of display panel, including array substrate described in the application any embodiment.
Since display panel provided by the embodiments of the present application uses above-mentioned array substrate, and aforesaid substrate includes: substrate base
Plate, the multiple public electrodes being set on underlay substrate and the multiple transparent electrodes being set on the multiple public electrode,
Multiple public electrodes and multiple transparent electrodes are arranged in a one-to-one correspondence, the transparent electrode and the corresponding public electrode
It partly overlaps.When thin film transistor (TFT) is opened into closing, feed-through effect makes the voltage of pixel electrode with grid electricity
The lifting of pressure and go up and down, the capacitor for adjusting public electrode voltages sweeps public electrode voltages with the capacitance connection
It retouches the lifting of the grid voltage on line and goes up and down, in this way, when being connected with the pixel of the capacitor on showing scan line, transparent electrode
Voltage difference between public electrode will remain unchanged substantially, therefore, thus it is possible to vary or the influence of feed-trough voltage is eliminated, to change
Kind display film flicker problem, and then promote the display quality of display panel.
The application's has the beneficial effect that by changing in array substrate in different pixels unit transparent electrode layer in public power
The area of the projection overlapping of pole layer, changes the size of storage capacitance, and then improves display film flicker, display effect, picture
Non-uniform phenomenon.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the equivalent diagram of liquid crystal display panel provided by the embodiments of the present application.
Fig. 2 in the charging stage and keeps stage liquid crystal for pixel unit in liquid crystal display panel provided by the embodiments of the present application
The voltage change figure at both ends.
Fig. 3 is the structural schematic diagram of array substrate provided by the embodiments of the present application.
Fig. 4 is the detail structure diagram of storage capacitance provided by the embodiment of the present application.
Fig. 5 is a kind of layout viewing of storage capacitance provided by the embodiment of the present application.
Fig. 6 is another layout viewing of storage capacitance provided by the embodiment of the present application.
Fig. 7 is process flow chart provided by the embodiment of the present application.
Specific embodiment
The embodiment of the invention provides a kind of array substrate, liquid crystal display panel and display devices, to improve or eliminate
The influence of feed-trough voltage promotes the display quality of liquid crystal display panel so as to improve display film flicker problem.
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
It should be noted that the thickness of each layer and shape do not reflect actual proportions in attached drawing of the present invention, purpose is only illustrated
Illustrate the embodiment of the present application content.
Referring to Fig. 1, array substrate provided by the embodiments of the present application, comprising: underlay substrate 11 intersects on underlay substrate 11
The multi-strip scanning line 12 and multiple data lines 13 of arrangement, at least one scan line 12 are connected with for adjusting public electrode voltages
One end of the storage capacitance 14 of Vcom, the storage capacitance 14 connects a scan line 12, and the other end is connected to public electrode voltages
Vcom。
Specifically, the storage capacitance 14 of the array substrate includes public electrode and transparent electrode (not shown), public affairs
Common electrode and the transparent electrode correspond, and the storage capacitance 14 is arranged in array in array substrate, i.e., deposits with described
Storage is held corresponding public electrode and is occurred in pairs with the transparent electrode, and is arranged in array, and the transparent electrode and right
The public electrode is answered to partly overlap.
In a better embodiment, the border area of array substrate is arranged in storage capacitance 14, for example, storage capacitance 14
The left side edge region or right edge region of array substrate are set.
In a better embodiment, (it is denoted as shown in Figure 1, each scan line 12 is respectively connected with storage capacitance 14
Cst, as shown in figure 1 shown in dotted line frame), in this way when showing any pixel on liquid crystal display panel, pixel electrode and common electrical
Voltage difference between pole will remain unchanged substantially, therefore, can eliminate the influence of feed-trough voltage as far as possible, so as to improve display picture
Flicker problem promotes the display quality of liquid crystal display panel.The one end storage capacitance Cst connects public electrode voltages Vcom in Fig. 1,
But the embodiment of the present application is not limited to this, and the one end storage capacitance Cst can also for example connect next scan line.
After being provided with storage capacitance 14 in array substrate, pixel is charging in the liquid crystal display panel comprising the array substrate
The voltage change at stage and holding stage liquid crystal both ends is as shown in Figure 2.Fig. 2 shows when thin film transistor (TFT) is opened into closing,
Feed-through effect goes up and down pixel electrode voltage with the lifting of grid voltage, for adjusting public electrode voltages
Capacitor public electrode voltages are gone up and down with the lifting of the grid voltage in the scan line with the capacitance connection, showing
When pixel on liquid crystal display panel, the voltage difference between the transparent electrode and public electrode of the pixel remains unchanged substantially, i.e.,
Therefore Δ V1=Δ V2=Δ V3=Δ V4=Δ V5 can improve or eliminate the influence of feed-trough voltage, so as to improve display picture
Face flicker problem promotes the display quality of liquid crystal display panel.
Feed-trough voltage, its origin cause of formation are primarily due to the variation of other voltages on panel, via parasitic capacitance or storage
Capacitor influences the correctness of show electrode voltage.Main voltage change source has 3 on the lcd panel, is grid respectively
Drive (gate driver) voltage change, source drive (source driver) voltage change and public electrode
(common) voltage change.And it influences maximum to be exactly gate drive voltage variation (via Cgd or Cs), Yi Jigong among these
Common voltage changes (via Clc or Cs+Clc), and under the fixed framework of common voltage, cause feed through electric
The main cause of pressure just only has the voltage change of gate driving.
Thin film transistor (TFT) is designed using laminated construction, and due to exposing engineering surplus, source electrode and drain electrode, grid and drain electrode are inevitable
Generate overlapping.When electrode overlaps, it is easy to produce capacitor 14, and generate to Thin Film Transistor-LCD (TFT-LCD)
Large effect.
In above-mentioned storage capacitance 14 setting of transparent electrode 141 and public electrode 142 can there are many implementation, below
It is illustrated in conjunction with attached drawing.
Referring to Fig. 3, in array substrate provided in an embodiment of the present invention, on underlay substrate 11, the transparent electrode 141 with
152 same layer of grid of the setting of 16 same layer of pixel electrode, public electrode 142 and thin film transistor (TFT) 15 is arranged.Transparent electrode 141 is for example
It can be connect by via hole with scan line 12, the public electrode 142 of each storage capacitance 14 can be first coupled on single line, so
Public electrode voltages Vcom is connected by the line again afterwards, which can be parallel with projection of the data line 13 on underlay substrate 11.When
So, the public electrode 142 of each storage capacitance 14 can also respectively be connect with public electrode voltages Vcom, the embodiment of the present invention pair
This is not defined.
Specifically, referring to Fig. 4, Fig. 4 is the detail structure diagram of storage capacitance 14 provided by the embodiment of the present application.
The storage capacitance 14 provided by the embodiment of the present application is by the transparent electrode 141 and the corresponding public electrode
142 regions that partly overlap form storage capacitance 14, and the storage capacitance is used to adjust the voltage (Vcom) of the public electrode.
In a better embodiment, the transparent electrode provided by the embodiment of the present application and the corresponding common electrode
Overlapping area length range be 1 micron -2 microns, corresponding, the wide range of overlapping area is also 1 micron -2 micro-
Rice；Further, in the array substrate provided by the embodiment of the present application, the overlapping area is rectangle, i.e. overlapping area is big
Small range is 1 square micron to 4 square microns.
In a better embodiment, Fig. 5 is referred to, along the extending direction of the scan line, the transparent electrode 141
With the overlapping area size of the public electrode 142 in being incremented by or decline trend, further, according to the size of capacitor with
The formula of capacitanceε is the dielectric capacitance value of the storage capacitance value, and S is the right opposite of the storage capacitance
Product, in the embodiment of the present application, S, that is, overlapping area size, k is the electrostatic force constant of the storage capacitance, and d is the storage
The distance between capacitor two-plate, according to formula it is found that the size of the size of the storage capacitance C and the overlapping area is at just
Than；In the embodiment of the present application, due to reducing the size of the overlapping area, and then the big of the storage capacitance is reduced
It is small.
Specifically, the embodiment of the present application only proposes in a line of array substrate in the Fig. 5, the transparent electrode 141
Overlapping area size with the public electrode 142 is in incremental or decline trend.In addition to this, the application is not limited to described in a line
The increasing or decreasing trend of transparent electrode 141 and the overlapping area size of the public electrode 142, for example, preferably implementing one
In example, along the extending direction of the data line, the faying surface of the first row transparent electrode 141 and the public electrode 142
At increasing trend, the overlapping area size of the second row transparent electrode 141 and the public electrode 142 can become product size at successively decreasing
Gesture or increasing trend, and so on.
In a better embodiment, refer to Fig. 6, along the extending direction of the data line, the transparent electrode and
The overlapping area of the public electrode is in incremental or decline trend.
Specifically, the embodiment of the present application only proposes in a column of array substrate, the transparent electrode 141 in the Fig. 5
Overlapping area size with the public electrode 142 is in incremental or decline trend.In addition to this, the application is not limited to described in a column
The increasing or decreasing trend of transparent electrode 141 and the overlapping area size of the public electrode 142, for example, preferably implementing one
In example, along the extending direction of the data line, the faying surface of the first row transparent electrode 141 and the public electrode 142
At increasing trend, the overlapping area size of the second row transparent electrode 141 and the public electrode 142 can become product size at successively decreasing
Gesture or increasing trend, and so on.
In a preferred embodiment, due to the presence of parasitic capacitance in liquid crystal display panel, so that grid signal is being closed
When will lead to the voltage of pixel electrode, and there are the deviations of feed-trough voltage before and after jumping, further, the array substrate
In, feed-trough voltage in any one of pixel unit it is of different sizes, the embodiment of the present application can adjust the liquid crystal
Before showing panel, the average gray-scale value of the array substrate is preferentially tested, and according to the feed-trough voltage (vfth) and grid
(gate) variation of voltageWherein,
Vfth is feed-trough voltage, and Cgd is coupled capacitor between grid and drain electrode, Clc is liquid crystal capacitance, and Cst is storage capacitance, Vgh
For grid line high voltage (also referred to as cut-in voltage), Vgl is grid line low-voltage (also referred to as closing voltage).Calculate the battle array
The average storage capacitance value of column substrate, and according to the average storage capacitance value in the array substrate, calculate the array base
The size of overlapping area in plate, and the overlapping area size of this array substrate is adjusted.
In addition to this, the transparent electrode is identical as the material of the public electrode, and the material includes indium tin oxide
(Indium Tin Oxide, abbreviation ITO).
Below by taking array substrate provided in an embodiment of the present invention as an example, mentioned in conjunction with Fig. 7 to illustrate the embodiment of the present application
The preparation process flow of the array substrate of confession.
S10 forms public electrode on underlay substrate；
S20 forms grid, scan line and the public electrode wire of thin film transistor (TFT) on the public electrode；
Wherein, public electrode wire is connect with public electrode, and the grid of thin film transistor (TFT) is not contacted with public electrode, grid,
The material of scan line and public electrode wire can for example use Mo/Al/Mo.
S30 forms gate insulation layer on grid, scan line and public electrode wire, and active layer, source are formed on gate insulation layer
Pole, drain electrode and data line；
Wherein, source electrode is connected with data line, and the material of source electrode, drain electrode and data line can for example use Mo/Al/Mo.
S40 forms passivation layer on source electrode, drain electrode and data line；
S50 forms pixel electrode and transparent electrode on the passivation layer；
Wherein, the transparent electrode is identical as the material of the public electrode, and the material includes indium tin oxide.
Wherein, the drain electrode connection of transparent electrode and thin film transistor (TFT), transparent electrode 141 are connect with scan line, transparent electrode
141 and public electrode 142 on underlay substrate projection overlapping, constitute the storage capacitance 14 for adjusting public electrode voltages.
In array substrate provided by the embodiments of the present application, closing is opened into the thin film transistor (TFT) of the array substrate
When, feed-through effect goes up and down the voltage of pixel electrode with the lifting of grid voltage, for adjusting public electrode
The capacitor of voltage goes up and down public electrode voltages with the lifting of the grid voltage in the scan line with the capacitance connection, this
Sample, when being connected with the pixel of the capacitor on showing scan line, the voltage difference between transparent electrode and public electrode will be tieed up substantially
Hold it is constant, therefore, thus it is possible to vary or eliminate the influence of feed-trough voltage, so as to improve display film flicker problem, and then promoted aobvious
Show the display quality of panel.
Conceived based on same patent application, the embodiment of the invention also provides a kind of display panel, including the present invention are any
The array substrate that embodiment provides.
Conceived based on same patent application, the embodiment of the invention provides a kind of display devices, comprising: the present invention is arbitrarily real
The liquid crystal display panel of example offer is provided.The display device can be with are as follows: mobile phone, tablet computer, television set, display, notebook electricity
Any products or components having a display function such as brain, Digital Frame, navigator.
It has the beneficial effect that by changing throwing of the transparent electrode layer in common electrode layer in different pixels unit in array substrate
The area of shadow overlapping changes the size of storage capacitance, and then it is non-uniform to improve display film flicker, display effect, picture
Phenomenon.
In addition to the implementation, the application can also have other embodiments.It is all to use equivalent replacement or equivalence replacement shape
At technical solution, all fall within this application claims protection scope.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above by preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of array substrate, which is characterized in that the array substrate include underlay substrate, be set to it is multiple on underlay substrate
Public electrode and the multiple transparent electrodes being set on the multiple public electrode, multiple public electrodes and multiple institutes
It states transparent electrode to be arranged in a one-to-one correspondence, the transparent electrode and the corresponding public electrode partly overlap.
2. array substrate according to claim 1, which is characterized in that the transparent electrode and the corresponding public electrode portion
Overlapping region is divided to form storage capacitance, the storage capacitance is used to adjust the voltage of the public electrode.
3. arraying bread board according to claim 1, which is characterized in that described along the extending direction of the scan line
The overlapping area of prescribed electrode and the public electrode is in incremental or decline trend.
4. arraying bread board according to claim 1, which is characterized in that the transparent electrode and the corresponding common electrode
The range of overlapping area is 1 square micron to 4 square microns.
5. array substrate according to claim 1, which is characterized in that the transparent electrode and the corresponding common electrode
The range of overlapping area size is 1 square micron to 4 square microns.
6. array substrate according to claim 1, which is characterized in that the array substrate further includes a plurality of transversely arranged
Pixel is provided with above the intersection region of scan line and a plurality of vertically disposed data line, the scan line and the data line
Unit.
7. array substrate according to claim 6, which is characterized in that the pixel unit includes: thin film transistor (TFT), described
The grid of thin film transistor (TFT) connects a scan line, and the source electrode of the thin film transistor (TFT) connects a data line；
Pixel electrode connects the drain electrode of the thin film transistor (TFT)；
The drain electrode or the pixel electrode same layer of the grid, the thin film transistor (TFT) of the transparent electrode and the thin film transistor (TFT)
Setting.
8. array substrate according to claim 7, which is characterized in that the public electrode is set to the thin film transistor (TFT)
Grid and the underlay substrate between, the drain electrode same layer of the transparent electrode and the thin film transistor (TFT) is arranged.
9. array substrate according to claim 1, which is characterized in that the material of the transparent electrode and the public electrode
Identical, the material includes indium tin oxide.
10. a kind of display panel, which is characterized in that including array substrate according to any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351893.7A CN110109307A (en) | 2019-04-28 | 2019-04-28 | Array substrate and display panel |
| PCT/CN2019/111382 WO2020220596A1 (en) | 2019-04-28 | 2019-10-16 | Array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351893.7A CN110109307A (en) | 2019-04-28 | 2019-04-28 | Array substrate and display panel |
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| Publication Number | Publication Date |
|---|---|
| CN110109307A true CN110109307A (en) | 2019-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910351893.7A Pending CN110109307A (en) | 2019-04-28 | 2019-04-28 | Array substrate and display panel |
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| CN (1) | CN110109307A (en) |
| WO (1) | WO2020220596A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220596A1 (en) * | 2019-04-28 | 2020-11-05 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
| CN113314071A (en) * | 2021-06-23 | 2021-08-27 | 合肥京东方卓印科技有限公司 | Display substrate and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020220596A1 (en) | 2020-11-05 |
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