CN110098563B - Entanglement light source based on double-cavity structure - Google Patents
Entanglement light source based on double-cavity structure Download PDFInfo
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- CN110098563B CN110098563B CN201910504380.5A CN201910504380A CN110098563B CN 110098563 B CN110098563 B CN 110098563B CN 201910504380 A CN201910504380 A CN 201910504380A CN 110098563 B CN110098563 B CN 110098563B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
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- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Semiconductor Lasers (AREA)
Abstract
The utility model provides an entanglement light source based on two-chamber structure includes from top to bottom: an upper DBR layer for increasing reflectivity; an upper cavity for providing an upper resonant cavity mode; a middle DBR layer for increasing reflectivity; the lower cavity is used for providing a lower resonant cavity mode; and a lower DBR layer for increasing reflectivity; the entanglement light source based on the double-cavity structure can directly construct a double-cavity mode structure by changing the structure of materials, and comprises an upper layer, a middle layer and a lower layer of Distributed Bragg Reflectors (DBRs), wherein the DBRs are used for improving the reflectivity, a complex process is not needed, and the efficiency of collecting entanglement photon pairs is greatly improved.
Description
Technical Field
The utility model relates to an entanglement light source technical field especially relates to an entanglement light source based on two-chamber structure, specifically is based on Distributed Bragg Reflector (DBR) two-chamber structure's entanglement light source.
Background
Photon entanglement means that if two photons from the same beam are separated, the corresponding properties of one photon will change simultaneously after the other photon is manipulated or disturbed. This correlation is a strong correlation that occurs instantaneously over distance. People have made a lot of researches on entanglement light sources, and the method of using nonlinear crystals to combine optical paths to realize photon entanglement is a good method, and the record of the number of photon entanglement in the experiment at present is created by the method, but the method has a great defect, most of noises are generated, namely the probability of the entangled photon pair generated under each pulse is lower, and is usually less than 10%. The dual exciton cascade emission is the primary means of generating entangled photon pairs by direct excitation of the material. Since the unique property of the double-exciton luminescence can be used in a quantum logic gate after CuCl quantum dot double-exciton luminescence property reported in 1994, theories and experiments about the double-exciton luminescence are continued for 20 years, and the application prospect is huge. Entangled light sources are important fundamental resources in quantum communication and quantum computing.
The entanglement light source has a huge application prospect, but still does not leave a laboratory on a large scale and enter human production and life, the main reason is that the efficiency of the nonlinear crystal combined light path method is too low, and the exciton entanglement property of the luminescent material is not controlled sufficiently by people by the cascade emission method. At present, the method for generating entangled photons by cascade emission by using the solid semiconductor quantum dot material has the greatest feasibility. Around this technology, the current breakthrough is mainly to adopt process technology to improve efficiency, and often no breakthrough is found on the material itself.
The method of using a coupled optical cavity is one possible method. Two same columns are coupled together through a photoetching process, the two optical cavities can be coupled by adjusting the diameter and the interval between the columns, and the quantum dot is buried into one of the optical cavities, so that the deterministic coupling of the energy states of the double excitons and the excitons of the quantum dot is ensured. The Purcell effect ensures that the entangled photon pair is emitted into both cavity modes, improving the indistinguishability of both optical recombination paths. This method can increase the efficiency to 80%. (see Adrien Dousse et al, Nature466(2010)217.) the use of broadband optical antennas is also one of the methods currently under investigation. The quantum dots are buried in AlGaAs, a layer of silver is added below the quantum dots to be used as a radioactive mirror, a PMMA gasket with low refractive index is covered on the radioactive mirror, and a layer of bowl-mounted GaP solid immersion lens is covered on the radioactive mirror. Through the process, the efficiency of collecting entangled photon pairs is greatly improved and can reach 65% +/-4%. (see Yan Chen et al, Nature Communications, (2018) 9: 2994.) however, these methods have high process requirements and great manufacturing difficulty.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
Based on the above problems, the present disclosure provides an entanglement light source based on a dual-cavity structure, so as to alleviate technical problems of high process requirements, high manufacturing difficulty and the like of the entanglement light source in the prior art.
(II) technical scheme
The utility model provides an entanglement light source based on two-chamber structure includes from top to bottom: an upper DBR layer for increasing reflectivity; an upper cavity for providing an upper resonant cavity mode; a middle DBR layer for increasing reflectivity; the lower cavity is used for providing a lower resonant cavity mode; and a lower DBR layer for improving reflectivity.
In an embodiment of the present disclosure, the upper DBR layer includes: 10 to 15 pairs of GaAs/AlGaAs cladding layers.
In the disclosed embodiment, the upper DBR layer comprises 15 pairs of GaAs/AlGaAs superimposed layers.
In an embodiment of the present disclosure, the upper chamber includes: 3 GaAs layers, and InAs quantum dots are embedded in the GaAs layers.
In an embodiment of the present disclosure, the middle DBR layer includes: 15 to 20 pairs of GaAs/AlGaAs cladding layers.
In the disclosed embodiment, the middle DBR layer comprises 15 pairs of GaAs/AlGaAs superposed layers.
In the embodiment of the present disclosure, the lower cavity comprises 4 GaAs layers.
In an embodiment of the present disclosure, the lower DBR layer includes: 20 to 26 pairs of GaAs/AlGaAs cladding layers.
In an embodiment of the present disclosure, the lower DBR layer includes: 26 pairs of GaAs/AlGaAs superposed layers.
In the embodiment of the disclosure, the half-height width of the upper cavity or the lower cavity is changed by adjusting the number of pairs of the GaAs/AlGaAs superposed layers of the upper DBR layer or the lower DBR layer.
(III) advantageous effects
According to the technical scheme, the entanglement light source based on the double-cavity structure has at least one or part of the following beneficial effects:
(1) no complex process is required;
(2) the efficiency of collecting entangled photon pairs is improved.
Drawings
Fig. 1 is a schematic structural diagram of an entangled light source based on a dual-cavity structure according to an embodiment of the present disclosure.
FIG. 2 is a reflection spectrum of an entangled light source based on a dual cavity structure according to an embodiment of the present disclosure.
Detailed Description
The utility model provides an entanglement light source based on two-chamber structure, entanglement light source based on two-chamber structure through the structure that changes the material, can directly construct two-chamber mode structure, including upper, middle and lower three-layer Distributed Bragg Reflector (DBR), it is used for improving the reflectivity, does not need too complicated technology, collects entanglement photon and to have improved a lot to efficiency.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, there is provided an entangled light source based on a dual-cavity structure, as shown in fig. 1, the entangled light source based on the dual-cavity structure includes, from top to bottom:
an upper DBR layer for increasing reflectivity;
an upper cavity for providing an upper resonant cavity mode;
a middle DBR layer for increasing reflectivity;
a lower cavity for providing a lower resonant cavity mode;
a lower DBR layer for increasing reflectivity;
the upper DBR layer includes: a plurality of pairs of GaAs/AlGaAs superimposed layers; in the present disclosure, a pair of GaAs/AlGaAs stack layers, i.e., a two-layer structure layer in which the upper layer is a GaAs layer and the lower layer is an AlGaAs layer, is provided.
The number of pairs of GaAs/AlGaAs superposed layers in the upper DBR layer is 10-15 pairs, preferably 15 pairs;
the upper chamber body includes: and multiple GaAs layers embedded with InAs quantum dots.
The number of the GaAs layers in the upper cavity is 3;
the middle DBR layer includes: a plurality of pairs of GaAs/AlGaAs superimposed layers;
the number of pairs of GaAs/AlGaAs superposed layers in the middle DBR layer is 15 to 20 pairs, preferably 15 pairs;
the lower cavity comprises: a plurality of GaAs layers;
the number of the GaAs layers in the lower cavity is 4;
the lower DBR layer includes: a plurality of pairs of GaAs/AlGaAs superimposed layers;
the number of pairs of GaAs/AlGaAs superposed layers in the lower DBR layer is 20 to 26 pairs, preferably 26 pairs;
the distance between the upper cavity (upper resonant cavity mode) and the lower cavity (lower resonant cavity mode) can be changed by adjusting the number of pairs of GaAs/AlGaAs superposed layers of the middle DBR layer;
the half-height width of the upper resonant cavity film or the lower resonant cavity film can be changed by adjusting the number of pairs of GaAs/AlGaAs superposed layers of the upper DBR layer or the lower DBR layer;
in the embodiment of the present disclosure, the reflection spectrum of the entanglement light source based on the dual-cavity structure as shown in fig. 2 is different from that of the conventional DBR structure in that only one resonant cavity is provided, the entanglement light source of the embodiment of the present disclosure includes two resonant cavities (a resonant cavity mode 1 and a resonant cavity mode 2), the two resonant cavities are coupled by adjusting the number of pairs of the GaAs/AlGaAs superimposed layers in the entanglement light based on the dual-cavity structure, and the emission of entangled photons can be realized by embedding quantum dots in one of the resonant cavities.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or approaches mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example.
From the above description, those skilled in the art should clearly recognize that the present disclosure is based on an entangled light source with a dual cavity structure.
In summary, the present disclosure provides an entanglement light source based on a dual cavity structure, which includes: an upper, middle, and lower three-layered Distributed Bragg Reflector (DBR) for increasing reflectivity; the upper cavity is used for providing a resonant cavity mode, and quantum dots are embedded in the middle of the upper cavity; and a lower cavity for providing another cavity mode. The invention can directly construct a double-cavity die structure by changing the structure of the material, and is used for manufacturing the entanglement light source. Compared with the prior art, the method does not need too complex process, greatly improves the efficiency of collecting entangled photon pairs, overcomes a plurality of difficulties, and is beneficial to the development of entangled light sources.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (5)
1. An entanglement light source based on double-cavity structure, includes from top to bottom:
an upper DBR layer for increasing reflectivity;
an upper cavity for providing an upper resonant cavity mode;
a middle DBR layer for increasing reflectivity;
the lower cavity is used for providing a lower resonant cavity mode; and
a lower DBR layer for increasing reflectivity;
the upper chamber body includes: 3 GaAs layers, wherein InAs quantum dots are embedded in the GaAs layers;
the lower cavity comprises 4 GaAs layers;
the upper DBR layer comprises 10-15 pairs of GaAs/AlGaAs superposed layers;
the middle DBR layer includes: 15 to 20 pairs of GaAs/AlGaAs cladding layers;
the lower DBR layer includes: 20 to 26 pairs of GaAs/AlGaAs cladding layers;
and the distance between the upper resonant cavity mode and the lower resonant cavity mode of the lower cavity is changed by adjusting the number of pairs of GaAs/AlGaAs superposed layers of the middle DBR layer.
2. The entangled light source based on dual-cavity structure of claim 1, wherein the upper DBR layer comprises 15 pairs of GaAs/AlGaAs cladding layers.
3. The entangled light source based on dual-cavity structure of claim 1, wherein the middle DBR layer comprises 15 pairs of GaAs/AlGaAs stacked layers.
4. The entangled light source based on dual-cavity structure of claim 1, the lower DBR layer comprising: 26 pairs of GaAs/AlGaAs superposed layers.
5. The entanglement light source based on the dual-cavity structure as claimed in any one of claims 1 to 4, wherein the half-height width of the upper cavity or the lower cavity is changed by adjusting the number of pairs of GaAs/AlGaAs superposed layers of the upper DBR layer or the lower DBR layer.
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| DE102008036400B3 (en) * | 2008-08-01 | 2010-01-21 | Technische Universität Berlin | Photon pair source and process for their preparation |
| CN102034909A (en) * | 2009-09-30 | 2011-04-27 | 中国科学院半导体研究所 | Method for epitaxial growth of molecular beam of low-density InAs quantum dots |
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