CN110098291A - A kind of light emitting diode with quantum dots QLED device and preparation method thereof, device - Google Patents
A kind of light emitting diode with quantum dots QLED device and preparation method thereof, device Download PDFInfo
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- CN110098291A CN110098291A CN201810098238.0A CN201810098238A CN110098291A CN 110098291 A CN110098291 A CN 110098291A CN 201810098238 A CN201810098238 A CN 201810098238A CN 110098291 A CN110098291 A CN 110098291A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
This application involves field of display technology, more particularly to a kind of light emitting diode with quantum dots QLED device and preparation method thereof, device, to alleviate the problem of nanoparticle in the first transport layer formed on quantum dot light emitting layer in the prior art leaks and influences quantum dot light emitting layer.This method comprises: dissolving the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property, mixed solution is formed；Mixed solution is deposited on the quantum dot light emitting layer of formation, forms the first transport layer comprising polymer and nanoparticle；Wherein, the polymer in the first transport layer leaks out to quantum dot light emitting layer in netted and package nanoparticle to obstruct nanoparticle.To avoid the nanoparticle in the first transport layer from being leaked out in quantum dot light emitting layer by gravity.
Description
Technical field
This application involves field of display technology more particularly to a kind of light emitting diode with quantum dots QLED device and its production sides
Method, device.
Background technique
Light emitting diode with quantum dots (Quantum DotLight Emitting Diodes, QLED) is that one kind is novel not
Need the self-luminous technology of additional light source, quantum dot (QuantumDots) is that some naked eyes can not be seen, extremely small half
Conductor nanoparticle is the particle that a kind of partial size is a few nanometers to tens of nanometers.
As shown in Figure 1, be existing QLED device film layer structure schematic diagram, in the device film layer, from the bottom to top according to
It is secondary to specifically include that the film layers such as cathode 11, electron transfer layer 12, quantum dot light emitting layer 13, hole transmission layer 14, anode 15.In addition,
It can also include: electron injecting layer, hole injection layer etc., Fig. 1 is not showed that.
Since transition metal oxide (such as zinc oxide, titanium oxide etc.) has excellent visible light permeability, work function can
Therefore modulability becomes the preferred material of electron transfer layer in QLED device.But due to electron transfer layer and quantum dot light emitting layer
It is usually all made of the inorganic matter with semiconductor property, and electron transfer layer is often directly contacted with quantum dot light emitting layer, is led
It causes in the prior art during preparing transition metal oxide electron transfer layer on quantum dot light emitting layer, it may appear that upper layer
Nanoparticle leaks out to lower layer's even interlayer the case where dissolving each other.So that defect occurs in quantum dot light emitting layer, and then influence
The performance of QLED device.
Summary of the invention
The embodiment of the present application provides a kind of two pole QLED panel of quantum dot light emitting, device and preparation method thereof, to alleviate
Occur quantum dot light emitting layer caused by leakage even interlayer dissolves each other between quantum dot light emitting layer and transport layer in the prior art to exist
The problem of defect.
The embodiment of the present application adopts the following technical solutions:
A method of making light emitting diode with quantum dots QLED device, comprising:
The polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property are dissolved, mixed solution is formed；
It deposits the mixed solution on the quantum dot light emitting layer of formation, forms the comprising the polymer and the nanoparticle
One transport layer；Wherein, polymer described in first transport layer is in the netted and package nanoparticle.
Preferably, the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property are dissolved, is formed mixed
Solution is closed, is specifically included:
First solution is obtained using the polymer that the first solvent dissolves the non-polyelectrolyte class；It is dissolved using the second solvent
The nanoparticle with inorganic semiconductor property obtains the second solution；Mix first solution and the second solution shape
At the mixed solution.
Preferably, the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property are dissolved, is formed mixed
Solution is closed, is specifically included:
The polymer of the non-polyelectrolyte class and nanoparticle with inorganic semiconductor property are dissolved using third solvent
Son forms the mixed solution.
Preferably, in the above-mentioned methods: the concentration of polymer described in the mixed solution is less than 1mg/ml；The mixing
The concentration of nanoparticle described in solution is greater than or equal to 15mg/ml and is less than or equal to 25mg/ml.
It preferably, include alcoholic solvent in the mixed solution.
Preferably, before forming the quantum dot light emitting layer, the method also includes:
Form the second transport layer, polymer in second transport layer comprising non-polyelectrolyte class and having inorganic is partly led
The nanoparticle of volume property.
Preferably, the polymer is polyvinylpyrrolidone.
A kind of light emitting diode with quantum dots QLED device, comprising: quantum dot light emitting layer, be located at the quantum dot light emitting layer it
On the first transport layer, the polymer and receiving with inorganic semiconductor property that first transport layer includes non-polyelectrolyte class
Rice corpuscles；Wherein, the polymer is in the netted and package nanoparticle.
Preferably, above-mentioned device further include: the second transport layer under the quantum dot light emitting layer,
In second transport layer comprising netted non-polyelectrolyte class polymer and with inorganic semiconductor property
Nanoparticle.
A kind of light emitting diode with quantum dots QLED device, including any one of the above QLED device.
The embodiment of the present application use at least one above-mentioned technical solution can reach it is following the utility model has the advantages that
It include the polymer and tool of non-polyelectrolyte class by above technical scheme, in the first transport layer that the application is formed
There is the nanoparticle of inorganic semiconductor property, the polymer of the non-polyelectrolyte class has chain structure, a plurality of non-poly- electricity of chain
The polymer for solving matter class forms reticular structure, and winding package nanoparticle, avoids first during forming the first transport layer
Nanoparticle in transport layer is leaked out in quantum dot light emitting layer by gravity, the case where interlayer dissolves each other occurs, to guarantee
The performance of quantum dot light emitting layer, and then promote QLED device Integral luminous performance.In addition, in the second transport layer that the application is formed
Non- polyelectrolyte quasi polymer can be improved quantum dot light emitting layer and the second transport layer contact surface consistency, make the contact
Face forms fine and close reticular structure, reduces the gap on the second transport layer contact surface, and then stop in quantum dot light emitting layer
Nanoparticle leaks out in the second transport layer.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is light emitting diode with quantum dots QLED film layer structure schematic diagram in the prior art；
Fig. 2 is one of the production method flow chart of QLED device provided by the present application；
Fig. 3 is the specific flow chart of step 21 provided by the present application；
Fig. 4 is the two of the production method flow chart of QLED device provided by the present application；
Fig. 5 a is one of QLED device film schematic diagram of a layer structure provided by the present application；
Fig. 5 b is the structural schematic diagram of the first transport layer provided by the present application；
Fig. 6 a is the two of QLED device film schematic diagram of a layer structure provided by the present application；
Fig. 6 b is the three of QLED device film schematic diagram of a layer structure provided by the present application；
Fig. 7 is the four of QLED device film schematic diagram of a layer structure provided by the present application；
Fig. 8 a is the five of QLED device film schematic diagram of a layer structure provided by the present application；
Fig. 8 b is the six of QLED device film schematic diagram of a layer structure provided by the present application.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
Below in conjunction with attached drawing, the technical scheme provided by various embodiments of the present application will be described in detail.It should be noted that the application
The film layer structure schematic diagram of offer only shows the positional relationship between different film layers, does not represent actual thicknesses of layers.This Shen
Please in step serial number do not represent step execution sequencing, but with specification explain and Figure of description in showing
Subject to example.
Embodiment one
The embodiment of the present application provides a kind of light emitting diode with quantum dots QLED device manufacture method, as shown in Fig. 2, this method
Include:
Step 21: dissolving the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property, formed mixed
Close solution.
In this application, the polymer of the non-polyelectrolyte class refers specifically to the polymer in addition to polymer dielectric,
The polymer of the non-polyelectrolyte class is chain.Dissolve the polymer of the non-polyelectrolyte class and with inorganic semiconductor property
Nanoparticle can use alcoholic solvent or other similar solvents of property, can be by the modes such as stirring, heating in course of dissolution
Accelerate dissolution, includes the polymer and nanoparticle of chain in resulting mixed solution, which can be zinc oxide
Or the transition metal oxides such as titanium oxide.
Step 22: deposit the mixed solution on the quantum dot light emitting layer of formation, formed comprising the polymer and
First transport layer of the nanoparticle.
Wherein, polymer described in first transport layer is in the netted and package nanoparticle.
It can also include: to provide a substrate, and the film layers such as electrode layer are sequentially formed in substrate before this step
Step.
Depositing operation involved in this step can specifically include coating, dip-coating, spraying, printing etc., mix in deposition
After solution, in order to accelerate film-formation result, solvent can also be steamed using at least one mode such as heating, drying, vacuum
It sends out, so that only retaining polymer in the film layer after evaporation and by the nanoparticle of polymerization winding package, formation described first is passed
Defeated layer.Since the polymer in first transport layer can wrap up nanoparticle in the form of three-dimensional winding, it can be effective
The movement of nanoparticle is limited, barrier nanoparticle sinks to leaking out to quantum dot light emitting layer due to gravity, avoids first
Film layer between transport layer and quantum dot light emitting layer is dissolved each other, and guarantees the luminescent properties of quantum dot light emitting layer.
In addition, can include not only polymer and nanoparticle, can also include in the first transport layer of above-mentioned formation
Other can reinforce polymer and wrap up ability to the winding of nanoparticle, or, increase the organic or nothing of network polymers density
Machine material, to promote the limitation capability to nanoparticle.
Wherein, it should be noted that the first transport layer involved in the application can be electron transfer layer, or
Hole transmission layer, as long as meeting the film layer that first transport layer is produced on quantum dot light emitting layer.In this way, can just exist
The problem of nanoparticle due to being located at first transport layer on upper layer caused by gravity leaks out to quantum dot light emitting layer.And
In the application, it is molten that mixing is formed by the polymer of the non-polyelectrolyte class of dissolution and the nanoparticle with inorganic semiconductor property
Liquid deposits the mixed solution and forms the first transport layer.Polymer three-dimensional winding is wrapped up nanoparticle and is limited in the first transport layer
Its movement is made, thus, alleviate the phenomenon that nanoparticle in the first transport layer leaks out to quantum dot light emitting layer, guarantees quantum dot hair
The illumination effect of photosphere.
The embodiment of the present application here it is shown that abovementioned steps 11,12 specific implementation.It should be understood, of course, that above-mentioned step
Suddenly can also realize in other manners, the embodiment of the present application to this with no restriction.
Embodiment two
Based on above scheme, the embodiment of the present application provides a kind of production of preferably light emitting diode with quantum dots QLED device
Method, method includes the following steps:
Step 21: dissolving the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property, formed mixed
Close solution.
This step 21 can specifically use following two dissolution mechanism:
Scheme a, it is shown in Figure 3, polymer, nanoparticle are dissolved respectively using two different solvents, are then carried out
Mixing, referring in particular to following steps:
Step 211: the first solution is obtained using the polymer that the first solvent dissolves the non-polyelectrolyte class.
In the actual production process, the first solvent can be selected according to the characteristic of the polymer of selection.First solvent is often
Polymer dissolubility with higher to the non-polyelectrolyte class of selection and usually with used when preparing quantum dot light emitting layer
Solvent is immiscible.Furthermore, it is contemplated that subsequent first solution and the second solution are mixed to form mixed solution, the first solvent of selection is answered
It can dissolve each other with the second solvent, so that the mixed solution of formation is not stratified, avoid the occurrence of the phenomenon that solute is precipitated.Due to quantum dot
Luminescent layer generallys use nonpolar solvent, and therefore, the first solvent for preferably dissolving the polymer of above-mentioned non-polyelectrolyte class is
Polar solvent.
Step 212: the second solution is obtained using the second solvent dissolution nanoparticle with inorganic semiconductor property.
The nanoparticle is usually inorganic semiconductor nanoparticle, can specifically select the transition such as zinc oxide, titanium oxide
Metal oxide can select the second solvent according to the characteristic for the nanometer particle material actually selected, and the second solvent tends to
Dissolve above-mentioned nanoparticle, and usually immiscible with the solvent that uses when preparing quantum dot light emitting layer.Furthermore, it is contemplated that subsequent
One solution and the second solution are mixed to form mixed solution, and the second solvent of selection should can dissolve each other with the first solvent, to be formed
Mixed solution it is not stratified, avoid the occurrence of solute be precipitated the phenomenon that.Since quantum dot light emitting layer generallys use nonpolar solvent, because
This, the second solvent for preferably dissolving above-mentioned nanoparticle is polar solvent.
Step 213: mixing first solution and second solution forms the mixed solution.
Preferably, above-mentioned first solution and the second solution use polar solvent, and therefore, the first solution and the second solution can
It dissolves each other.By mixing in the mixed solution that above-mentioned first solution and the second solution obtain simultaneously comprising the non-polyelectrolyte class of chain
Polymer and nanoparticle.For example, the polymer of the non-polyelectrolyte class can be polyvinylpyrrolidone, it can also be with
For polymetylmethacrylate, polystyrene PS or polyacrylate etc..First solvent may include alcoholic solution, can also
With include other facilitate dissolution organic or inorganic solvent.The polymer of the non-polyelectrolyte class has chain structure, dissolution
Property it is higher, reticular structure is capable of forming after mixing with nanoparticle, preferably package and limits its movement at nanoparticle, is making
Nanoparticle is avoided to be leaked out in quantum dot light emitting layer by gravity during first transport layer, to guarantee that quantum dot is sent out
The illumination effect of photosphere.
In above scheme a, step 211 and step 212 are limited without sequencing, can be first carried out step 212 and be executed step again
Rapid 211, it also may be performed simultaneously step 211 and step 212, as long as above-mentioned first solution and the second solution can be obtained.
The polymer and nanoparticle for being dissolved non-polyelectrolyte class respectively using above two solvent, can be avoided in same solution
It is interfered with each other when dissolving two kinds of substances, guarantees that above two substance can be preferably dissolved in mixed solution, reduced mixed
Precipitation phenomenon guarantees the stability of the amount of solute in mixed solution.
Scheme b: using same solvent dissolution polymer and nanoparticle, mixed solution is formed.
Specifically, the polymer of the non-polyelectrolyte class dissolved using third solvent and with inorganic semiconductor property
Nanoparticle forms the mixed solution.
In the present solution, third solvent can dissolve the polymer and nanoparticle of non-polyelectrolyte class simultaneously, guarantee
Polymer can coexist with nanoparticle in third solution, under normal conditions the third solvent be polar solvent, thus guarantee with
The nonpolar solvent for preparing quantum dot light emitting layer use is immiscible, guarantees the complete of the first transport layer and quantum dot transport layer
Property, alleviate the phenomenon that interlayer dissolves each other.Moreover, third solvent can dissolve the polymer and nanoparticle of non-polyelectrolyte class simultaneously
Son, technique relative ease.Made in the program include in the mixed solution of the first transport layer non-polyelectrolyte class polymerization
Object, polymer winding package nanoparticle, limits the movement of nanoparticle in the first transport layer, thus, alleviate the first transmission
The phenomenon that nanoparticle in layer leaks out to quantum dot light emitting layer, guarantees the illumination effect of quantum dot light emitting layer.
For above scheme one and scheme two, preferably, the polymer of non-polyelectrolyte class described in the mixed solution
Concentration be less than 1mg/ml, the concentration of nanoparticle described in the mixed solution is greater than or equal to 15mg/ml and is less than or waits
In 25mg/ml.Under the concentration, the non-polyelectrolyte quasi polymer of chain, which can be wrapped up preferably in a manner of three-dimensional winding, to be received
Rice corpuscles effectively limits its movement, simultaneously as the electric conductivity of non-polyelectrolyte quasi polymer often leading than nanoparticle
Poor electrical performance can reduce the shadow that polymer conducts electronics using above-mentioned concentration for the electric conductivity for guaranteeing transport layer as far as possible
It rings, guarantees that the transport layer has preferable electric conductivity.In addition, in this application, above-mentioned concentration range is only as preferred implementation
Example is introduced, however it is not limited to using the mixed solution for meeting above-mentioned concentration range, can also be adjusted according to actual production demand
The concentration range of the polymer of non-polyelectrolyte class and/or the concentration range for adjusting nanoparticle, thus using above-mentioned concentration model
Mixed solution other than enclosing, as long as the film layer with the performance of polymer winding package nanoparticle can be obtained.
Step 22: formed on the quantum dot light emitting layer of formation comprising the polymer of the non-polyelectrolyte class and described
First transport layer of nanoparticle.
Based on above scheme, before the first transport layer described in shape, referring to fig. 4, further includes:
Step 23: forming the second transport layer, polymer in second transport layer comprising non-polyelectrolyte class and have
The nanoparticle of inorganic semiconductor property.
Wherein, quantum dot light emitting layer material described in polymer barrier netted in second transport layer leaks out to described
Two transport layers.The electrode adjacent with the second transport layer can be cathode or anode, be illustrated by taking cathode as an example below, in we
It is formed in case before the second transport layer, can also include forming cathode and electron injecting layer on substrate, above-mentioned film layer can be with
It is prepared by the way of deposition.Make the method and step phase of the specific method step and the first transport layer of production of the second transport layer
Seemingly, details are not described herein again.
The polymer three-dimensional package nanoparticle of non-polyelectrolyte class forms hard-packed second transport layer in this programme,
Second transport layer has reticular structure and has higher density, during subsequently forming quantum dot light emitting layer, due to upper
Polymer winding nanoparticle is stated, the gap between nanoparticle and nanoparticle has been filled up, has made the second transport layer and quantum dot
The contact surface gap of luminescent layer is less, has fine and close structure, alleviates in the quantum dot light emitting layer above the second transport layer as a result,
Nanoparticle the case where leaking out to the second transport layer, to guarantee quantum dot light emitting layer luminous mass.
Embodiment three
The embodiment of the present application provides a kind of light emitting diode with quantum dots QLED device, as shown in Figure 5 a, comprising: quantum dot hair
Photosphere 32, the first transmitting layer 31 on the quantum dot light emitting layer 32, first transmitting layer 31 include non-poly- electrolysis
Matter quasi polymer and nanoparticle with inorganic semiconductor property；Wherein, the polymer is in the netted and package nanometer
Particle leaks out to the quantum dot light emitting layer 32 to obstruct the nanoparticle.
Wherein, the structural schematic diagram of the first transport layer is as shown in Figure 5 b, and white hollow circle represents in the first transport layer in figure
The nanoparticle M with inorganic semiconductor property, the black line being wrapped in around nanoparticle M represents non-polyelectrolyte class
Polymer N, multiple branches that polymer N specifically includes main chain and connect with main chain, wherein branch is not shown.In figure
The positional relationship for only showing different material is not used in the amount of substance in limitation film layer.As illustrated in fig. 5b, in the first transport layer
Polymer winding package nanoparticle, to limit the movement of nanoparticle, polymer three-dimensional package winding nanoparticle is total
With stable, fine and close structure is formed, the nanoparticle being effectively relieved in the first transport layer leaks out to the feelings in quantum dot light emitting layer
Condition.
Wherein, quantum dot light emitting layer 32 is the film layer in QLED device with light-emitting function, in QLED device working condition
Under, the hole that the electronics and anode that cathode provides provide is transmitted to the quantum dot light emitting layer 32, quantum dot light emitting by transport layer
Quantum dot in layer 32, which absorbs photon, makes electron transition, to shine.Wherein, quantum dot is specifically small semiconductor nano grade
Crystal, partial size are a few nanometers to tens of nanometers.
In view of in this application, the first transmitting layer 31 can be electron transfer layer, or hole transmission layer, that
, the QLED device in this programme may include following two structure:
1: the first transport layer of structure is electron transfer layer.
As shown in Figure 6 a, which may include cathode 31a, electron transfer layer 32a, quantum dot light emitting layer 33a, sky
Cave transmitting layer 3 4a, anode 35a, the electron transfer layer 32a include non-polyelectrolyte class polymer and have inorganic semiconductor
The nanoparticle of property, it is shown in the shadow in figure；Wherein, the polymerization of the non-polyelectrolyte class in the electron transfer layer 32a
Object leaks out to the quantum dot light emitting layer 33a for obstructing nanoparticle.
For above-mentioned QLED device, the polymer winding of the non-polyelectrolyte class of a plurality of chain in electron transfer layer 32a is received
Rice corpuscles, forms fine and close structure, and the movement of the polymer limitation nanoparticle of non-polyelectrolyte class makes electron transfer layer 32a
Stable structure is formed, the nanoparticle alleviated in electron transfer layer 32a is leaked out to quantum dot light emitting layer 33a's by gravity
Situation.
2: the first transport layer of structure is hole transmission layer.
As shown in Figure 6 b, which may include anode 31b, hole transmission layer 32b, quantum dot light emitting layer 33b, electricity
Sub- transmitting layer 3 4b, cathode 35b, the hole transmission layer 32b include non-polyelectrolyte class polymer and have inorganic semiconductor
The nanoparticle of property, it is shown in the shadow in figure；Wherein, the polymerization of the non-polyelectrolyte class in the hole transmission layer 32b
Object leaks out to the quantum dot light emitting layer 33b for obstructing nanoparticle.
For above-mentioned QLED device, the polymer winding of the non-polyelectrolyte class of a plurality of chain in hole transmission layer 32b is received
Rice corpuscles, forms fine and close structure, and the movement of the polymer limitation nanoparticle of non-polyelectrolyte class makes hole transmission layer 32b
Stable structure is formed, the nanoparticle alleviated in hole transmission layer 32b is leaked out to quantum dot light emitting layer 33b's by gravity
Situation.
It further include the second transport layer 43 referring to Fig. 7, second transport layer 43 includes the second polymerization based on above-mentioned device
Object and nanoparticle with inorganic semiconductor property；The wherein polymer of the non-polyelectrolyte class in second transport layer 43
The quantum dot light emitting layer is leaked out to for obstructing nanoparticle.
Wherein, for the microstructure of the second transport layer 43 referring to shown in Fig. 5 b, the polymer N in the second transport layer winds package
Nanoparticle M fills up the gap between nanoparticle and nanoparticle, and stable, fine and close structure is collectively formed with nanoparticle,
The polymer plays certain supporting role to the nanoparticle in quantum dot light emitting layer, makes nanoparticle in quantum dot light emitting layer not
Easy to leak is into the second transport layer, to guarantee the luminescent properties of quantum dot light emitting layer.
Above-mentioned QLED device can have following two structure:
The a: the first transport layer of structure is electron transfer layer, and the second transport layer is hole transmission layer.
As shown in Figure 8 a, which includes cathode 51a, electron transfer layer 52a, quantum dot light emitting layer 53a, hole biography
Defeated layer 54a, anode 55a, wherein include the polymerization of non-polyelectrolyte class in electron transfer layer 52a and hole transmission layer 54a
Object.
For above-mentioned QLED structure, the polymer wrapped nanoparticle of non-polyelectrolyte class in electron transfer layer 52a is formed
Fine and close structure, shown in the shadow in figure, the movement of the polymer limitation nanoparticle of the non-polyelectrolyte class of a plurality of chain,
The nanoparticle in electron transfer layer 52a is avoided to be leaked out in quantum dot light emitting layer 53a by gravity.And hole transmission layer
The polymer wrapped nanoparticle of non-polyelectrolyte class in 54a improves the global density of hole transmission layer 54a, reduces hole and passes
Gap in defeated layer 54a, the nanoparticle alleviated in quantum dot light emitting layer 53a are leaked out to hole transmission layer 54a by gravity
The case where, thereby it is ensured that the luminescent properties of quantum dot light emitting layer 53a.
The b: the first transport layer of structure is hole transmission layer, and the second transport layer is electron transfer layer.
As shown in Figure 8 b, which includes anode 51b, hole transmission layer 52b, quantum dot light emitting layer 53b, electronics biography
Defeated layer 54b, cathode 55b, wherein include the polymerization of non-polyelectrolyte class in hole transmission layer 52b and electron transfer layer 54b
Object.
For above-mentioned QLED structure, the polymer wrapped nanoparticle of non-polyelectrolyte class in hole transmission layer 52b is formed
Fine and close structure, shown in the shadow in figure, the movement of the polymer limitation nanoparticle of the non-polyelectrolyte class of a plurality of chain,
The nanoparticle in hole transmission layer 52b is avoided to be leaked out in quantum dot light emitting layer 53b by gravity.And electron transfer layer
The polymer wrapped nanoparticle of non-polyelectrolyte class in 54b improves electron transfer layer 54b and contacts with quantum dot light emitting layer 53b
The density in face reduces the gap on the contact surface, plays certain supporting role to the nanoparticle in quantum dot light emitting layer 53b, delays
The case where nanoparticle in solution quantum dot light emitting layer 53b is leaked out to electron transfer layer 54b by gravity, thereby it is ensured that amount
The luminescent properties of son point luminescent layer 53b.In the devices set out in the foregoing, it is received described in the polymer wrapped of the netted non-polyelectrolyte class
Rice corpuscles.Since the polymer of non-polyelectrolyte class has fine and close reticular structure, mixing with nanoparticle can be from all directions
The movement for limiting the nanoparticle avoids nanoparticle from being leaked out to the film layer on the downside of it by gravity, thereby guarantees that and receive
The performance of film layer where rice corpuscles and the film layer on the downside of it.
Example IV
The embodiment of the present application provides a kind of light emitting diode with quantum dots QLED device, including the above-mentioned any QLED device referred to
Part.The QLED device can be mobile phone, tablet computer, television set, display, laptop, Digital Frame, navigator, intelligence
Energy wearable device, virtual reality (Virtual Reality, VR) equipment, augmented reality (Augmented Reality, AR) are set
Any products or components having a display function such as standby, also can be applied to lighting apparatus.Other for the display device must
Indispensable component part is it will be apparent to an ordinarily skilled person in the art that having, and this will not be repeated here, should not also be made
For the limitation to the application.
The above is only embodiments herein, are not intended to limit this application.To those skilled in the art,
Various changes and changes are possible in this application.It is all within the spirit and principles of the present application made by any modification, equivalent replacement,
Improve etc., it should be included within the scope of the claims of this application.
Claims (10)
1. a kind of method for making light emitting diode with quantum dots QLED device characterized by comprising
The polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property are dissolved, mixed solution is formed；
The mixed solution is deposited on the quantum dot light emitting layer of formation, being formed includes the polymer and the nanoparticle
The first transport layer；
Wherein, polymer described in first transport layer is in the netted and package nanoparticle.
2. the method as described in claim 1, which is characterized in that dissolve the polymer of non-polyelectrolyte class and partly led with inorganic
The nanoparticle of volume property forms mixed solution, specifically includes:
First solution is obtained using the polymer that the first solvent dissolves the non-polyelectrolyte class；
Second solution is obtained using the second solvent dissolution nanoparticle with inorganic semiconductor property；
It mixes first solution and second solution forms the mixed solution.
3. the method as described in claim 1, which is characterized in that dissolve the polymer of non-polyelectrolyte class and partly led with inorganic
The nanoparticle of volume property forms mixed solution, specifically includes:
The polymer of the non-polyelectrolyte class is dissolved using third solvent and with the nanoparticle shape of inorganic semiconductor property
At the mixed solution.
4. method as claimed in claim 2 or claim 3, which is characterized in that
The concentration of polymer described in the mixed solution is less than 1mg/ml；
The concentration of nanoparticle described in the mixed solution is greater than or equal to 15mg/ml and is less than or equal to 25mg/ml.
5. method as claimed in claim 4, which is characterized in that include alcoholic solvent in the mixed solution.
6. the method as claimed in claims 1-3, which is characterized in that before forming the quantum dot light emitting layer, the method
Further include:
It forms the second transport layer, polymer in second transport layer comprising non-polyelectrolyte class and there is inorganic semiconductor
The nanoparticle of matter.
7. the method according to claim 1, which is characterized in that the polymer is polyvinylpyrrolidone.
8. a kind of light emitting diode with quantum dots QLED device, comprising: quantum dot light emitting layer is located on the quantum dot light emitting layer
The first transport layer, which is characterized in that
First transport layer includes the polymer of non-polyelectrolyte class and the nanoparticle with inorganic semiconductor property；
Wherein, the polymer is in the netted and package nanoparticle.
9. device as claimed in claim 8, further includes: the second transport layer under the quantum dot light emitting layer, it is special
Sign is,
Polymer in second transport layer comprising netted non-polyelectrolyte class and the nanometer with inorganic semiconductor property
Particle.
10. a kind of light emitting diode with quantum dots QLED device, which is characterized in that including QLED device as claimed in claim 8 or 9
Part.
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| CN113382493A (en) * | 2020-03-09 | 2021-09-10 | 财团法人纺织产业综合研究所 | Electroluminescent wire |
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