CN110098224A - A kind of dot structure, display screen and pixel structure preparation method - Google Patents
A kind of dot structure, display screen and pixel structure preparation method Download PDFInfo
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/10—Image acquisition
- G06V10/12—Details of acquisition arrangements; Constructional details thereof
- G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
- G06V10/147—Details of sensors, e.g. sensor lenses
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of dot structure, display screen and pixel structure preparation methods.The dot structure includes the finger sensing pixels of the light emitting display pixels unit that substrate, array are set on the substrate and array setting.The finger sensing pixels include the first electrode being cascading, redox graphene layer and second electrode.Compared to the prior art, dot structure of the invention reduces production difficulty and production cost to reduce production process without designing complicated optical path.
Description
Technical field
The present invention relates to screen lower fingerprint recognition field more particularly to a kind of dot structure, with the display of the dot structure
Screen and pixel structure preparation method.
Background technique
Comprehensively screen electronic equipment (for example, mobile phone, tablet computer etc.) by wide visual field and comfortable feel it is deep by
The welcome of user.In order to allow electronic equipment to reach higher screen accounting, preposition fingerprint sensing component is moved to electronics by many manufacturers
The back side of equipment becomes postposition unlocked by fingerprint, also has many manufacturers to go to substitute using solutions such as iris unlock or face recognitions
Fingerprint recognition.However, these types of solution or influencing the overall aesthetic degree of electronic equipment or can not accomplish ultimate attainment screen
Accounting.
To solve the above-mentioned problems, research staff has developed the lower fingerprint technique of screen.For example, China the
201880001882X patent application discloses fingerprint technique under the screen with microlens array, has optics collimator array
Screen under fingerprint technique under fingerprint technique and screen with pinhole array.However, these technical solutions are all based on using non-
Crystal silicon photodiode, the manufacturing process is complicated, cost is extremely high.Also, these technical solutions require design complexity
Optical path, so that amorphous silicon photodiodes receive the signal light of carrying finger print information.
In view of the above problems, it is necessary to fingerprint technique scheme under the new screen of one kind is provided, to solve the above problems.
Summary of the invention
The purpose of the present invention is to provide a kind of dot structure, with the display screen and dot structure system of the dot structure
Make method, which reduces production difficulty and production to reduce production process without designing complicated optical path
Cost.
To achieve the above object, the present invention provides a kind of dot structures, comprising: substrate；Array is set to the substrate
On light emitting display pixels unit, the light emitting display pixels unit to formed display image a part；And array is set
The finger sensing pixels set, the finger sensing pixels are to receive by least part in the light emitting display pixels unit
It is issuing and handle the light that the finger sensing pixels are back to after digital reflex comprising the first electrode that is cascading,
Redox graphene layer and second electrode.
As a further improvement of the present invention, the finger sensing pixels array is set on the substrate, and with it is described
Light emitting display pixels unit is in the same plane.
As a further improvement of the present invention, the light emitting display pixels unit includes being cascadingly set on the substrate
On third electrode, pixel layer and the 4th electrode；The pixel layer include array setting multiple first light emitting display pixels,
Second light emitting display pixels and third light emitting display pixels；First light emitting display pixels, the second light emitting display pixels,
Three light emitting display pixels and finger sensing pixels arrangement are in matrix pattern.
As a further improvement of the present invention, the first electrode, third electrode are type compound transparent conductive film, described
Type compound transparent conductive film includes a pair of of indium oxide tin film and the silverskin between a pair of of indium oxide tin film.
As a further improvement of the present invention, the first electrode, third electrode are type compound transparent conductive film, described
Type compound transparent conductive film includes a pair of of indium oxide tin film and the aluminium film between a pair of of indium oxide tin film.
As a further improvement of the present invention, the dot structure, which is additionally provided with, matches with the finger sensing pixels
Microlens array assembles the signal light for carrying finger print information to the finger sensing pixels.
As a further improvement of the present invention, the light emitting display pixels unit includes being cascadingly set on the substrate
On third electrode, pixel layer and the 4th electrode；The pixel layer includes multiple light emitting display pixels of array setting, adjacent
Two light emitting display pixels between have pin hole, the third electrode, the 4th electrode are in the position of the correspondence pin hole
Upper hollow out setting；The finger sensing pixels are set to the lower section of the light emitting display pixels unit and cooperate with the pin hole,
It is guided with will pass through the pin hole for the signal light for carrying finger print information to the finger sensing pixels.
As a further improvement of the present invention, the light emitting display pixels unit includes being cascadingly set on the substrate
On third electrode, pixel layer and the 4th electrode；The pixel layer includes multiple light emitting display pixels of array setting, adjacent
Two light emitting display pixels between have gap, the third electrode, the 4th electrode the correspondence gap position
Upper hollow out setting；The dot structure is additionally provided with the microlens array matched with the gap, the finger sensing pixels
It being set to below the microlens array, being drawn with will pass through the gap, microlens array for the signal light for carrying finger print information
It is directed at the finger sensing pixels.
As a further improvement of the present invention, the light emitting display pixels unit includes being cascadingly set on the substrate
On third electrode, pixel layer and the 4th electrode；The pixel layer includes multiple light emitting display pixels of array setting, adjacent
Two light emitting display pixels between have gap, the third electrode, the 4th electrode the correspondence gap position
Upper hollow out setting；The dot structure is additionally provided with the collimator array matched with the gap, the finger sensing pixels
It being set to below the collimator array, being drawn with will pass through the gap, collimator array for the signal light for carrying finger print information
It is directed at the finger sensing pixels.
To achieve the above object, the present invention also provides a kind of display screens, including touch component, polaroid and aforementioned picture
Plain structure.
To achieve the above object, the present invention also provides a kind of pixel structure preparation method, include the following steps:
S1: by drawing several electrode groups on substrate, each electrode group all include a first electrode, three third electrodes with
And interstice coverage；
S2: one silicon nitride layer of growth regulation in substrate, electrode group, and in the first silicon nitride layer and first electrode corresponding section
Open up first through hole；
S3: redox graphene layer, the reduction-oxidation are grown in the first silicon nitride layer and first electrode corresponding section
Graphene layer is contacted by first through hole with the first electrode；
S4: the nitride silicon layer of growth regulation on first silicon nitride layer, redox graphene layer, and described first
Silicon nitride layer, the second silicon nitride layer and the third electrode, interstice coverage corresponding section open up through slot, in second silicon nitride layer
The second through-hole is opened up with redox graphene layer corresponding section；
S5: anode is grown in the through slot, the second through hole；
S6: growing silicon dioxide layer at second silicon nitride layer, anode, and from the silicon dioxide layer and described the
Three electrode corresponding sections open up through-hole, and it is graphical, to form pixel definition area；
S7: organic luminous layer, the 4th electrode is deposited in pixel definition area；
S8: growing film encapsulated layer.
As a further improvement of the present invention, the step S3 further comprises following steps:
S31: graphene oxide suspension is coated in the first silicon nitride layer and first electrode corresponding section；
S32: graphene oxide suspension is reduced by redox graphene by thermal anneal process；
S33: by yellow light technique that the redox graphene is graphical.
As a further improvement of the present invention, the projection of the first through hole, the second through-hole in drive substrate is not overlapped.
The beneficial effects of the present invention are: the optical path of dot structure of the invention without designing complexity, to reduce production
Process reduces production difficulty and production cost.
Detailed description of the invention
Fig. 1 is the dot structure schematic diagram of first embodiment of the invention.
Fig. 2 is diagrammatic cross-section of the Fig. 1 along the direction AA '.
Fig. 3 is the dot structure schematic diagram of second embodiment of the invention.
Fig. 4 is the dot structure schematic diagram of third embodiment of the invention.
Fig. 5 is the dot structure schematic diagram of fourth embodiment of the invention.
Fig. 6 is the structural schematic diagram of extraction electrode on substrate.
Fig. 7 is diagrammatic cross-section of the Fig. 6 along the direction BB '.
Fig. 8 is the structural schematic diagram after one silicon nitride layer of Fig. 7 growth regulation.
Fig. 9 is the structural schematic diagram after Fig. 8 growth redox graphene layer.
Figure 10 is the structural schematic diagram after the nitride silicon layer of Fig. 9 growth regulation.
Figure 11 is the structural schematic diagram after Figure 10 growth anode.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Present invention discloses a kind of dot structures, are set to the light emitting display pixels on the substrate including substrate, array
Unit and the finger sensing pixels of array setting.The a part of the light emitting display pixels unit to form display image.
Signal light of the finger sensing pixels to receive to carry finger print information comprising the first electrode that is cascading, also
Former graphene oxide layer and second electrode.The signal light for carrying finger print information is by the light emitting display pixels unit
At least part issue and handle the light that the finger sensing pixels are back to after digital reflex.Combined with specific embodiments below
Elaborate present invention pixel structure.
Fig. 1, the dot structure 100 Fig. 2 shows first embodiment of the invention.The dot structure 100 includes substrate
110, array is set on the substrate 110 light emitting display pixels unit 120, array are set to the finger on the substrate 110
Line sensor pixel 130 and the microlens array 140 matched with the finger sensing pixels 130.The light emitting display pixels
Unit 120 and the finger sensing pixels 130 are generally on same plane.
It please refers to shown in Fig. 2, the light emitting display pixels unit 120 includes being cascadingly set on the substrate 110
Third electrode 121, pixel layer 122 and the 4th electrode 123.The third electrode 121 is type compound transparent conductive film.Institute
Stating type compound transparent conductive film includes a pair of of indium oxide tin film and the silverskin between a pair of of indium oxide tin film, Huo Zhesuo
Stating type compound transparent conductive film includes a pair of of indium oxide tin film and the aluminium film between a pair of of indium oxide tin film.The picture
Plain layer 122 includes multiple first light emitting display pixels 1221, the second light emitting display pixels 1222 and the third hair of array setting
Light display pixel 1223.First light emitting display pixels 1221, the second light emitting display pixels 1222, third light emitting display pixels
1223 be usually independently to be shone and formed by red, green, blue three-colour light-emitting material respectively.It is understood that wherein
In one variant embodiment, first light emitting display pixels 1221, the second light emitting display pixels 1222, third luminescence display picture
Element 1223 using white as backlight, again by colored filter optical filtering respectively by forming.Refering to Figure 1, first hair
Light display pixel 1221, the second light emitting display pixels 1222, third light emitting display pixels 1223 and finger sensing pixels 130 are big
Cause it is in the same plane, and arrange be in matrix pattern.
It please refers to shown in Fig. 2,130 array of finger sensing pixels is set on the substrate 110 comprising successively layer
First electrode 131, redox graphene layer 132 and the second electrode 133 of folded setting.The first electrode 131 is compound
Type transparent conductive film.The transparent conductive film includes a pair of of indium oxide tin film and between a pair of of indium oxide tin film
Silverskin, or the aluminium film including a pair of of indium oxide tin film and between a pair of of indium oxide tin film.Carry the letter of finger print information
To the redox graphene floor 132, the resistance so as to cause the redox graphene layer 132 becomes for number light emission
Change, and then the electric current in circuit is caused to change, and then processor is converted into corresponding fingerprint image according to current signal and believes
Breath.
Compared to the prior art, present invention pixel structure 100 is by the light emitting display pixels unit 120, fingerprint sensing picture
Element 130 is integrated on same substrate 110, so that the light emitting display pixels unit 120, finger sensing pixels 130 are generally in
On same plane, so that the finger sensing pixels 130 can receive the signal light of more carrying finger print information, avoid
The prior art is guided the signal light for carrying finger print information to the finger sensing pixels by the gap between adjacent pixel
The drawbacks of information light caused by and is reduced, and then effectively improve signal-to-noise ratio.Also, due to the finger sensing pixels 130, hair
Light display pixel cells 120 are in the same plane, the optical path complicated without design, and then reduce production process, drop
Low production difficulty and production cost.Further, since the light emitting display pixels unit 120, finger sensing pixels 130 are substantially
It is in the same plane, so that the thickness of the display screen with the dot structure 100 reduces.
Fig. 3 shows the dot structure 200 of second embodiment of the invention.The dot structure 200 includes substrate 210, battle array
Arrange the finger sensing pixels 230 of the light emitting display pixels unit 220 being set on the substrate 210 and array setting.It is described
The structure of finger sensing pixels 230 is identical as the structure of the finger sensing pixels 130.
It please refers to shown in Fig. 3, the light emitting display pixels unit 220 includes being cascadingly set on the substrate 210
Third electrode 221, pixel layer 222 and the 4th electrode 223.The third electrode 221 is compound-type conducting film.The picture
Plain layer 222 includes multiple light emitting display pixels 2221 of array setting.The light emitting display pixels 2221 are usually by red, green
Color, blue three-colour light-emitting material independently shine and are formed.There is pin hole between the light emitting display pixels 2221 of adjacent two
2222, the third electrode 221, the 4th electrode 223 correspond to hollow out setting on the position of the pin hole 2222.The fingerprint sensing
Pixel 230 is set to the lower section of the light emitting display pixels unit 220 and matches with the pin hole 2222, described will pass through
Pin hole 2222 guides the signal light for carrying finger print information to the finger sensing pixels 230.
Fig. 4 shows the dot structure 300 of third embodiment of the invention.The dot structure 300 includes substrate 310, battle array
Arrange the finger sensing pixels 330 and micro- of the light emitting display pixels unit 320 being set on the substrate 310, array setting
Lens array 340.The structure of the finger sensing pixels 330 is identical as the structure of the finger sensing pixels 130.
It please refers to shown in Fig. 4, the light emitting display pixels unit 320 includes being cascadingly set on the substrate 310
Third electrode 321, pixel layer 322 and the 4th electrode 323.The third electrode 321 is compound-type conducting film.The picture
Plain layer 322 includes multiple light emitting display pixels 3221 of array setting.Between the light emitting display pixels 3221 of adjacent two
With gap 3222, the third electrode 321, the 4th electrode 323 hollow out on the position in the correspondence gap 3222 are arranged.Institute
Microlens array 340 is stated to be set to 3222 lower section of gap and match with the gap 3222.The finger sensing pixels
330 are set to the lower section of the microlens array 340, and will pass through the gap 3222, microlens array 340 will carry fingerprint
The signal light of information is guided to the finger sensing pixels 330.
Fig. 5 shows the dot structure 400 of fourth embodiment of the invention.The dot structure 400 includes substrate 410, battle array
Arrange the light emitting display pixels unit 420 being set on the substrate 410, the finger sensing pixels 430 and collimation of array setting
Device array 440.The structure of the finger sensing pixels 430 is identical as the structure of the finger sensing pixels 130.
It please refers to shown in Fig. 5, the light emitting display pixels unit 420 includes being cascadingly set on the substrate 410
Third electrode 421, pixel layer 422 and the 4th electrode 423.The third electrode 421 is compound-type conducting film.The picture
Plain layer 422 includes multiple light emitting display pixels 4221 of array setting.Between the light emitting display pixels 4221 of adjacent two
With gap 4222, the third electrode 421, the 4th electrode 423 hollow out at the position in the correspondence gap 4222 are arranged.Institute
Collimator array 440 is stated to be set to 4222 lower section of gap and match with the gap 4222.The finger sensing pixels
430 are set to the lower section of the collimator array 440, and will pass through the gap 4222, microlens array 440 will carry fingerprint
The signal light of information is guided to the finger sensing pixels 430.
Compared to the prior art, present invention pixel structure 200,300,400 is substituted non-using redox graphene layer
Crystal silicon imaging sensor, it is possible to prevente effectively from complicated light path design, and manufacturing process can be reduced, it is produced into reduce
This.
Present invention further teaches a kind of display screens, including touch component (not shown), polaroid (not shown) and pixel
Structure, the dot structure is aforementioned first embodiment, second embodiment, 3rd embodiment, any one in fourth embodiment
Kind.
It please refers to shown in Fig. 6 to Figure 11, present invention further teaches the production methods of dot structure 100, include the following steps:
S1: please referring to shown in Fig. 6 and Fig. 7, and by drawing several electrode groups on substrate 110, each electrode group all includes one
131, three third electrodes 121 of a first electrode and interstice coverage 13；
S2: please referring to shown in Fig. 8, one silicon nitride layer 20 of growth regulation in substrate 110, electrode group, and in the first silicon nitride
Layer 20 opens up first through hole 21 with 131 corresponding section of first electrode；
S3: please referring to shown in Fig. 9, grows oxygen reduction fossil with 131 corresponding section of first electrode in the first silicon nitride layer 20
Black alkene layer 30, the redox graphene layer 30 are contacted by the first through hole 21 with the first electrode 131；
S4: please referring to shown in Figure 10, nitride in first silicon nitride layer 20,30 growth regulation of redox graphene layer
Silicon layer 40, and it is corresponding with the third electrode 121, interstice coverage 13 in first silicon nitride layer 20, the second silicon nitride layer 40
Place opens up through slot 41, opens up the second through-hole with 30 corresponding section of redox graphene layer in second silicon nitride layer 40
42；
S5: please referring to shown in Figure 11, and anode 50 is grown at the through slot 41, the second through-hole 42；In the third electrode
The anode 50 and the third electrode 121 grown at 121 corresponding through slots 41 is electrically connected；It is grown at second through-hole 42
Anode 50 is the second electrode 133；
S6: at second silicon nitride layer 40, anode 50 grow a silicon dioxide layer, and the silicon dioxide layer with
121 corresponding section of third electrode opens up through-hole, and it is graphical, to form pixel definition area；
S7: organic luminous layer, the 4th electrode 123 is deposited with 121 corresponding section of third electrode in the anode 50；
S8: growing film encapsulated layer.
Further, the step S3 further includes following steps:
S31: graphene oxide suspension is coated with 121 corresponding section of first electrode in the first silicon nitride layer 20；
S32: graphene oxide suspension is reduced by redox graphene by thermal anneal process；
S33: by yellow light technique that the redox graphene is graphical.
Further, the projection of the first through hole 21, the second through-hole 42 on the substrate 110 is not overlapped.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferred embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, it can modify to technical solution of the present invention
Or equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (13)
1. a kind of dot structure characterized by comprising
Substrate；
Array is set to the light emitting display pixels unit on the substrate, and the light emitting display pixels unit is to form display figure
A part of picture；And
The finger sensing pixels of array setting, signal light of the finger sensing pixels to receive carrying finger print information, packet
Include the first electrode being cascading, redox graphene layer and second electrode.
2. dot structure as described in claim 1, it is characterised in that: the finger sensing pixels array is set to the substrate
On, and it is in the same plane with the light emitting display pixels unit.
3. dot structure as claimed in claim 2, it is characterised in that: the light emitting display pixels unit includes stacking gradually to set
Third electrode, pixel layer and the 4th electrode being placed on the substrate；The pixel layer includes multiple the first of array setting
Light emitting display pixels, the second light emitting display pixels and third light emitting display pixels；First light emitting display pixels, the second hair
Light display pixel, third light emitting display pixels and finger sensing pixels arrangement are in matrix pattern.
4. dot structure as claimed in claim 3, it is characterised in that: the first electrode, third electrode are type compound transparent
Conductive film, the type compound transparent conductive film include a pair of of indium oxide tin film and between a pair of of indium oxide tin film
Silverskin.
5. dot structure as claimed in claim 3, it is characterised in that: the first electrode, third electrode are type compound transparent
Conductive film, the type compound transparent conductive film include a pair of of indium oxide tin film and between a pair of of indium oxide tin film
Aluminium film.
6. dot structure as claimed in claim 2, it is characterised in that: the dot structure is additionally provided with and the fingerprint sensing
The microlens array that pixel matches assembles the signal light for carrying finger print information to the finger sensing pixels.
7. dot structure as described in claim 1, it is characterised in that: the light emitting display pixels unit includes stacking gradually to set
Third electrode, pixel layer and the 4th electrode being placed on the substrate；The pixel layer includes that the multiple of array setting shine
Display pixel has pin hole between two adjacent light emitting display pixels, and the third electrode, the 4th electrode are in corresponding institute
Hollow out on the position of pin hole is stated to be arranged；The finger sensing pixels be set to the lower section of the light emitting display pixels unit and with institute
Pin hole cooperation being stated, being guided with will pass through the pin hole for the signal light for carrying finger print information to the finger sensing pixels.
8. dot structure as described in claim 1, it is characterised in that: the light emitting display pixels unit includes stacking gradually to set
Third electrode, pixel layer and the 4th electrode being placed on the substrate；The pixel layer includes that the multiple of array setting shine
Display pixel has gap between two adjacent light emitting display pixels, and the third electrode, the 4th electrode are in corresponding institute
Hollow out on the position in gap is stated to be arranged；The dot structure is additionally provided with the microlens array matched with the gap, described
Finger sensing pixels are set to below the microlens array, and will pass through the gap, microlens array will carry fingerprint letter
The signal light of breath is guided to the finger sensing pixels.
9. dot structure as described in claim 1, it is characterised in that: the light emitting display pixels unit includes stacking gradually to set
Third electrode, pixel layer and the 4th electrode being placed on the substrate；The pixel layer includes that the multiple of array setting shine
Display pixel has gap between two adjacent light emitting display pixels, and the third electrode, the 4th electrode are in corresponding institute
Hollow out on the position in gap is stated to be arranged；The dot structure is additionally provided with the collimator array matched with the gap, described
Finger sensing pixels are set to below the collimator array, and will pass through the gap, collimator array will carry fingerprint letter
The signal light of breath is guided to the finger sensing pixels.
10. a kind of display screen, which is characterized in that including touching any one of component, polaroid and claim 1 to 9 institute
The dot structure stated.
11. a kind of pixel structure preparation method, which comprises the steps of:
S1: by drawing several electrode groups on substrate, each electrode group all includes a first electrode, three third electrodes and sky
Gap area；
S2: one silicon nitride layer of growth regulation in substrate, electrode group, and opened up in the first silicon nitride layer and first electrode corresponding section
First through hole；
S3: redox graphene layer, the reduction-oxidation graphite are grown in the first silicon nitride layer and first electrode corresponding section
Alkene layer is contacted by first through hole with the first electrode；
S4: the nitride silicon layer of growth regulation on first silicon nitride layer, redox graphene layer, and in first nitridation
Silicon layer, the second silicon nitride layer and the third electrode, interstice coverage corresponding section open up through slot, in second silicon nitride layer and institute
It states redox graphene layer corresponding section and opens up the second through-hole；
S5: anode is grown in the through slot, the second through hole；
S6: silicon dioxide layer is grown at second silicon nitride layer, anode, and electric from the silicon dioxide layer and the third
Pole corresponding section opens up through-hole, and it is graphical, to form pixel definition area；
S7: organic luminous layer, the 4th electrode is deposited in pixel definition area；
S8: growing film encapsulated layer.
12. pixel structure preparation method as claimed in claim 11, it is characterised in that: the step S3 further comprises as follows
Step:
S31: graphene oxide suspension is coated in the first silicon nitride layer and first electrode corresponding section；
S32: graphene oxide suspension is reduced by redox graphene by thermal anneal process；
S33: by yellow light technique that the redox graphene is graphical.
13. pixel structure preparation method as claimed in claim 11, it is characterised in that: the first through hole, the second through-hole exist
Projection on substrate is not overlapped.
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| CN110429126A (en) * | 2019-08-22 | 2019-11-08 | 昆山国显光电有限公司 | Display panel and display device |
| CN110649179A (en) * | 2019-09-29 | 2020-01-03 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof, display device and mask plate |
| CN110931533A (en) * | 2019-12-10 | 2020-03-27 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN111477105A (en) * | 2020-04-02 | 2020-07-31 | Oppo广东移动通信有限公司 | Display module and electronic equipment |
| CN111564472A (en) * | 2020-04-11 | 2020-08-21 | 北京元芯碳基集成电路研究院 | Interactive display based on carbon-based functional circuit and manufacturing method thereof |
| CN111710655A (en) * | 2020-06-18 | 2020-09-25 | 昆山梦显电子科技有限公司 | Display panel based on biological identification technology, manufacturing method thereof and display device |
| CN111880308A (en) * | 2020-07-06 | 2020-11-03 | 昆山梦显电子科技有限公司 | Display panel based on biological recognition technology, preparation method thereof and micro-display |
| CN112366217A (en) * | 2020-10-27 | 2021-02-12 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN113076933A (en) * | 2020-05-06 | 2021-07-06 | 神盾股份有限公司 | Electronic device with fingerprint sensing function |
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