CN110095827A - A kind of micro-nano structure generating circularly polarized light - Google Patents
A kind of micro-nano structure generating circularly polarized light Download PDFInfo
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- CN110095827A CN110095827A CN201910383127.9A CN201910383127A CN110095827A CN 110095827 A CN110095827 A CN 110095827A CN 201910383127 A CN201910383127 A CN 201910383127A CN 110095827 A CN110095827 A CN 110095827A
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 claims description 5
- 235000019988 mead Nutrition 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052934 alunite Inorganic materials 0.000 description 3
- 239000010424 alunite Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- KPZTWMNLAFDTGF-UHFFFAOYSA-D trialuminum;potassium;hexahydroxide;disulfate Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Al+3].[Al+3].[Al+3].[K+].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O KPZTWMNLAFDTGF-UHFFFAOYSA-D 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polarising Elements (AREA)
Abstract
The present invention relates to a kind of micro-nano structure for generating circularly polarized light, including substrate layer, the metal micro-nanostructure layer being set on substrate layer, the metal micro-nanostructure layer top is provided with quantum well layer, is provided with metal electrode layer above the quantum well layer；The metal micro-nanostructure layer is made of multiple chiral structure periodic arrangements；The micro-nano structure of the generation circularly polarized light, it is shone by quantum well layer, light is incident on chiral structure layer, to excite different surface phasmons on chiral structure layer, different surface phasmon superpositions inspire circularly polarized light, do not need to generate circularly polarized light using optically biaxial crystal, and generated circularly polarized light, it can be adjusted by adjusting load in the voltage of quantum well layer, conveniently and save the time.
Description
Technical field
The invention belongs to optical texture technical fields, and in particular to a kind of micro-nano structure for generating circularly polarized light.
Background technique
Optics (optics) is the important branch subject of physics.It is also subject relevant to optical engineering technology.Narrow sense
For, optics is the science about light and depending on seeing, optics word early stage is served only for eyes and depending on seeing the things being associated.Now
Its optics often said is broad sense, is studied from microwave, infrared ray, visible light, ultraviolet light until X-ray and gamma-ray broadness
Generation, propagation, reception and the display of electromagnetic radiation in wavelength band, and the science with matter interaction, are studied emphatically
Range be from infrared to ultraviolet band.It is an important component of physics.
Circularly polarized light principle is that and have the phase relation of (2n+1/2) π when two beam same frequencys, direction of vibration are orthogonal,
Circularly polarized light can be obtained after this two plane polarizations optical superposition；When linearly polarized light impinges perpendicularly on quarter-wave plate, if line
When the direction of vibration of polarised light and the optical axis included angle of quarter-wave plate are positive and negative 45 °, the light being emitted from quarter-wave plate is
For circularly polarized light.
In the prior art, it is to tire out to compensate in order to alunite compensator and rope by bar that generation circularly polarized light, which is relatively common method,
Device.
Bar in order to alunite compensator be by the optical axis wedge-shaped board groups of orthogonal two blocks of quartz at composite prism, wherein clapboard
Refraction angle α very little.When linearly polarized light vertically injects compensator, in upper wedge, linearly polarized light is decomposed into o light and e light
Two parts, they are propagated along same direction, and the phase difference δ 1 of two light of o, e depends on the crystal that they are passed through in upper wedge
Thickness d 1, but in lower wedge, since the optical axis of crystal of upper and lower two wedge is mutually perpendicular to, so the o light in upper wedge and
E light, which enters in lower wedge, has just respectively become e light and o light, and the phase difference δ 2 between them depends on them and passes through in lower wedge
Crystal thickness d2.
Bar in order in alunite compensator, when polarised light passes through d1=d2 in the center of two wedges, then the o light of self compensation device outgoing and
Phase difference is zero between e light.When the crystal thickness d1 that polarised light passes through in upper wedge and the crystal passed through in lower wedge are thick
When spending d2 difference, then certain phase difference is generated between two light.So can be obtained as light passes through the different level position of wedge
Different phase differences, that is, obtain different elliptically polarized lights.Obviously, in order to make the phase difference phase of each point on beam cross section
Together, the shortcomings that this compensator must use superfine light beam, this is it.In order to overcome this disadvantage, can be mended using rope is tired
Repay device.
Soleil compensator is the quartz by the parallel quartzy wedge of two optical axises and an optical axis perpendicular to two wedge optical axises
The composite prism of planopaallel plate composition.Upper wedge can be made itself to make parallel movement by final motion screw.When upper wedge in this way
When mobile, the overall thickness of two wedges can continuously change.When the overall thickness of two wedges is equal to the thickness of following quartzy planopaallel plate
When, phase difference is zero across the o light of compensator and e light.By changing two wedge overall thickness and quartzy parallel plane plate thickness
Difference the light beam for having identical phase difference on wider section can be obtained.
In the prior art, it there is no the directly electroluminescent light source for generating circularly polarized light, if a kind of directly electroluminescent generation can be designed
The light source of circularly polarized light can greatly improve various optics there is no need to adjust the frequent compensator that adjusts to generate circularly polarized light
The efficiency of experiment promotes the application of circularly polarized light.
Summary of the invention
In view of the above-mentioned problems, the object of the present invention is to provide a kind of micro-nano structure for generating circularly polarized light, including substrate layer,
The metal micro-nanostructure layer being set on substrate layer, the metal micro-nanostructure layer top are provided with quantum well layer, the quantum
Metal electrode layer is provided with above well layer；The metal micro-nanostructure layer is made of multiple chiral structure periodic arrangements.
The chiral structure is L shape chiral structure, and two arm lengths of the L shape chiral structure are different.
The chiral structure is L shape chiral structure, and the two-arm of the L shape chiral structure is of different size.
The chiral structure is spiral of Archimedes shape chiral structure.
The chiral structure is U-shaped chiral structure, and two arm lengths of the U-shaped chiral structure are different.
The metal micro-nanostructure layer with a thickness of 10nm~60nm.
The quantum well layer is made of GaAs or InGaAs.
The quantum well layer with a thickness of 50nm~80nm.
The metal micro-nanostructure layer be by gold silver or copper at.
The arrangement period of the chiral structure is 200nm~500nm.
Beneficial effects of the present invention: this micro-nano structure for generating circularly polarized light provided by the invention passes through quantum well layer
It shining, light is incident on chiral structure layer, so that different surface phasmons is excited on chiral structure layer, different surfaces etc.
Circularly polarized light is inspired from excimer superposition, does not need to generate circularly polarized light using optically biaxial crystal, and generated circle is inclined
Shake light, can be adjusted by adjusting load in the voltage of quantum well layer, conveniently and save the time.
The present invention is described in further details below with reference to attached drawing.
Detailed description of the invention
Fig. 1 is the floor map for generating the micro-nano structure of circularly polarized light.
Fig. 2 is L shape chiral structure schematic diagram.
Fig. 3 is spiral of Archimedes shape chiral structure schematic diagram.
Fig. 4 is U-shaped chiral structure schematic diagram.
In figure: 1, substrate layer；2, metal micro-nanostructure layer；3, quantum well layer；4, metal electrode layer.
Specific embodiment
Reach the technical means and efficacy that predetermined purpose is taken for the present invention is further explained, below in conjunction with attached drawing and reality
Example is applied to a specific embodiment of the invention, structure feature and its effect, detailed description are as follows.
Embodiment 1
Present embodiments provide a kind of micro-nano structure of generation circularly polarized light as shown in Figure 1, including substrate layer 1, the lining
Bottom 1 primarily serves the effect of being made, and substrate layer 1 can be made of silica, and silica has good translucency；Setting
Quantum well layer 3, the quantum are provided with above the metal micro-nanostructure layer 2 on substrate layer 1, the metal micro-nanostructure layer 2
Be provided with metal electrode layer 4 above well layer 3, the main function of quantum well layer 3 be it is luminous, need to connect with the positive and negative electrode of power supply
Touching, constitute electric power loop, therefore, metal micro-nanostructure layer 2, metal electrode layer 4 respectively as power supply positive and negative electrode and quantum
Well layer 3 contacts, it is ensured that quantum well layer 3 being capable of electrified light emitting；On the other hand, the metal micro-nanostructure layer 2 has excitation circle inclined
The effect of vibration light, metal micro-nanostructure layer 2 is made of multiple chiral structure periodic arrangements, in this way, metal micro-nanostructure layer 2 can
The light and excitation hand shape structure that quantum well layer 3 is generated generate surface phasmon, and different surface phasmons is superimposed excitation
Circularly polarized light out.
Further, as shown in Fig. 2, the chiral structure is L shape chiral structure, two brachiums of the L shape chiral structure
Degree is different, is also possible to two-arm width, can also be different with two arm lengths of L shape chiral structure, width.
Further, the metal micro-nanostructure layer 2 with a thickness of 10nm~60nm, it is preferential be selected as 10nm, 20nm,
30nm, 40nm etc..
Further, the quantum well layer 3 is made of the oxide that can be shone, such as GaAs or InGaAs are made；It is described
Quantum well layer 3 with a thickness of 50nm~80nm, preferentially can choose 50nm, 55nm, 60nm, 70nm etc..
The metal micro-nanostructure layer 2, metal electrode layer 4 be by gold silver or copper at.
Further, the arrangement period of the chiral structure is 200nm~500nm, and preferential can set chiral structure
Arrangement period be 250nm, 300nm, 350nm, 400nm, 450nm.
Embodiment 2
A kind of micro-nano structure of generation circularly polarized light as shown in Figure 1, Figure 3, including substrate layer 1 are present embodiments provided,
The substrate layer 1 primarily serves the effect of being made, and substrate layer 1 can be made of silica, and silica has good translucency；
The metal micro-nanostructure layer 2 being set on substrate layer 1 is provided with quantum well layer 3 above the metal micro-nanostructure layer 2, described
Be provided with metal electrode layer 4 above quantum well layer 3, the main function of quantum well layer 3 be it is luminous, need the positive and negative electrode with power supply
Contact, constitute electric power loop, therefore, metal micro-nanostructure layer 2, metal electrode layer 4 respectively as power supply positive and negative electrode and amount
Sub- well layer 3 contacts, it is ensured that quantum well layer 3 being capable of electrified light emitting；On the other hand, the metal micro-nanostructure layer 2 has excitation circle
The effect of polarised light, metal micro-nanostructure layer 2 are made of multiple chiral structure periodic arrangements, in this way, 2 energy of metal micro-nanostructure layer
The enough light for generating quantum well layer 3 and excitation hand shape structure generate surface phasmon, and different surface phasmon superpositions swashs
Issue circularly polarized light.
Further, as shown in figure 3, the chiral structure is spiral of Archimedes shape chiral structure.
The chiral structure is U-shaped chiral structure, and two arm lengths of the U-shaped chiral structure are different.
Further, the metal micro-nanostructure layer 2 with a thickness of 10nm~60nm, it is preferential be selected as 10nm, 20nm,
30nm, 40nm etc..
Further, the quantum well layer 3 is made of the oxide that can be shone, such as GaAs or InGaAs are made；It is described
Quantum well layer 3 with a thickness of 50nm~80nm, preferentially can choose 50nm, 55nm, 60nm, 70nm etc..
The metal micro-nanostructure layer 2, metal electrode layer 4 be by gold silver or copper at.
Further, the arrangement period of the chiral structure is 200nm~500nm, and preferential can set chiral structure
Arrangement period be 250nm, 300nm, 350nm, 400nm, 450nm.
Embodiment 3
A kind of micro-nano structure of generation circularly polarized light as Figure 1 and Figure 4, including substrate layer 1 are present embodiments provided,
The substrate layer 1 primarily serves the effect of being made, and substrate layer 1 can be made of silica, and silica has good translucency；
The metal micro-nanostructure layer 2 being set on substrate layer 1 is provided with quantum well layer 3 above the metal micro-nanostructure layer 2, described
Be provided with metal electrode layer 4 above quantum well layer 3, the main function of quantum well layer 3 be it is luminous, need the positive and negative electrode with power supply
Contact, constitute electric power loop, therefore, metal micro-nanostructure layer 2, metal electrode layer 4 respectively as power supply positive and negative electrode and amount
Sub- well layer 3 contacts, it is ensured that quantum well layer 3 being capable of electrified light emitting；On the other hand, the metal micro-nanostructure layer 2 has excitation circle
The effect of polarised light, metal micro-nanostructure layer 2 are made of multiple chiral structure periodic arrangements, in this way, 2 energy of metal micro-nanostructure layer
The enough light for generating quantum well layer 3 and excitation hand shape structure generate surface phasmon, and different surface phasmon superpositions swashs
Issue circularly polarized light.
Further, as shown in figure 4, the chiral structure is U-shaped chiral structure, two brachiums of the U-shaped chiral structure
The two-arm of the different perhaps described U-shaped chiral structures of degree is of different size or the length of the two-arm of the U-shaped chiral structure, width
It is different.
Further, the metal micro-nanostructure layer 2 with a thickness of 10nm~60nm, it is preferential be selected as 10nm, 20nm,
30nm, 40nm etc..
Further, the quantum well layer 3 is made of the oxide that can be shone, such as GaAs or InGaAs are made；It is described
Quantum well layer 3 with a thickness of 50nm~80nm, preferentially can choose 50nm, 55nm, 60nm, 70nm etc..
The metal micro-nanostructure layer 2, metal electrode layer 4 be by gold silver or copper at.
Further, the arrangement period of the chiral structure is 200nm~500nm, and preferential can set chiral structure
Arrangement period be 250nm, 300nm, 350nm, 400nm, 450nm.
In conclusion the micro-nano structure of the generation circularly polarized light, is shone, light is incident on chiral structure by quantum well layer 3
Layer, to excite different surface phasmons on chiral structure layer, it is inclined that different surface phasmon superpositions inspires circle
Shake light, does not need to generate circularly polarized light using optically biaxial crystal, and generated circularly polarized light, can be loaded by adjusting
It is adjusted in the voltage of quantum well layer, conveniently and saves the time.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of micro-nano structure for generating circularly polarized light, it is characterised in that: including substrate layer (1), be set on substrate layer (1)
Metal micro-nanostructure layer (2), metal micro-nanostructure layer (2) top are provided with quantum well layer (3), the quantum well layer (3)
Top is provided with metal electrode layer (4)；The metal micro-nanostructure layer (2) is made of multiple chiral structure periodic arrangements.
2. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the chiral structure is L
Two arm lengths of shape chiral structure, the L shape chiral structure are different.
3. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the chiral structure is L
The two-arm of shape chiral structure, the L shape chiral structure is of different size.
4. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the chiral structure be Ah
The spiral yarn shaped chiral structure of base Mead.
5. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the chiral structure is U
Two arm lengths of shape chiral structure, the U-shaped chiral structure are different.
6. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the metal micro-nanostructure
Layer (2) with a thickness of 10nm~60nm.
7. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the quantum well layer (3)
It is made of GaAs or InGaAs.
8. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the quantum well layer (3)
With a thickness of 50nm~80nm.
9. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the metal micro-nanostructure
Layer (2) be by gold silver or copper at.
10. a kind of micro-nano structure for generating circularly polarized light as described in claim 1, it is characterised in that: the chiral structure
Arrangement period is 200nm~500nm.
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| CN1921157A (en) * | 2005-08-26 | 2007-02-28 | 中国科学院半导体研究所 | High efficiency deep ultraviolet light-emitting diode |
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Application publication date: 20190806 |