CN110095785B - Self-triggering gating laser imaging device - Google Patents

Self-triggering gating laser imaging device Download PDF

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CN110095785B
CN110095785B CN201910341793.6A CN201910341793A CN110095785B CN 110095785 B CN110095785 B CN 110095785B CN 201910341793 A CN201910341793 A CN 201910341793A CN 110095785 B CN110095785 B CN 110095785B
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microchannel plate
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CN110095785A (en
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母一宁
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Changchun University of Science and Technology
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    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
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Abstract

Self-triggering gating laser imaging device belongs to the technical field of laser active imaging detection. The signal-to-noise ratio of the imaging detection of the prior art is to be improved. The micropore array grid has the following structural characteristics: micron-sized through holes are densely distributed in a circular sheet-shaped glass substrate along the axial direction, all the through holes are parallel to each other and form an angle of 7-15 degrees with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate to serve as a trigger signal bypass electrode; the bottom surface of the micropore array grid is contacted with the incident end surface of the secondary microchannel plate; the trigger signal bypass electrode is in contact with a trigger signal input end of the power generation circuit, a gating signal output end of the trigger circuit is respectively connected with respective gating signal input ends of the pulse power supply and the control circuit, two electrode ends of the pulse power supply are respectively connected with an emergent end face electrode of the first-stage microchannel plate and an incident end face electrode of the second-stage microchannel plate, and 50-100V reverse voltage or 200-250V forward voltage is added between the two electrodes; the driving signal output end of the control circuit is connected with the electronic shutter of the gating camera.

Description

自触发选通激光成像装置Self-triggered gated laser imaging device

技术领域technical field

本发明涉及一种自触发选通激光成像装置，属于激光主动成像探测技术领域。The invention relates to a self-triggering gating laser imaging device, which belongs to the technical field of laser active imaging detection.

背景技术Background technique

现有距离选通激光主动成像探测技术是由激光成像光源发出红外短脉冲激光，经准直后分束，一束照明目标后由目标反射成为探测图像信号并成像于选通摄像机；另一束照明目标后由目标反射成为外部触发源并由外部触发器件(如APD)接收，作为延时基准脉冲；根据激光成像光源到目标之间的距离确定同步控制电路的延迟时间，根据成像探测景深确定选通门开启的持续时间，在选通瞬间，所述探测图像信号刚好进入选通摄像机选通成像，其余时间选通门关闭。该方案有效去除非脉冲成像时间背景杂光进入选通摄像机，提高成像探测信噪比。只是该方案采取的分光方案使得一部分激光并未用于成像，势必降低探测图像信号光功率，不利于成像探测信噪比的提高。The existing range-gated laser active imaging detection technology is that a laser imaging light source emits an infrared short pulse laser, which is collimated and then split into beams. One beam illuminates the target and is reflected by the target to become a detection image signal and imaged on the gating camera; After illuminating the target, it is reflected by the target to become an external trigger source and received by an external trigger device (such as APD) as a delay reference pulse; the delay time of the synchronous control circuit is determined according to the distance between the laser imaging light source and the target, and the depth of field is determined according to the imaging detection. The duration of the gate opening is that at the moment of gate, the detection image signal just enters the gate camera for gate imaging, and the gate is closed for the rest of the time. The scheme effectively removes the background stray light entering the gated camera during non-pulse imaging time, and improves the signal-to-noise ratio of imaging detection. However, the spectroscopic scheme adopted in this scheme makes some lasers not used for imaging, which will inevitably reduce the optical power of the detection image signal, which is not conducive to the improvement of the imaging detection signal-to-noise ratio.

发明内容SUMMARY OF THE INVENTION

为了进一步提高选通激光主动成像探测信噪比，我们发明了一种自触发选通激光成像装置，相当于一种电真空放大器件，但是，特别提出一种电控选通器件，即微孔阵列栅极，由其旁路已经经过一次放大的图像信号的部分作为触发信号，反过来触发微孔阵列栅极选通，经过一次放大的图像信号通过微孔阵列栅极后再放大一次，最后成像于选通摄像机。In order to further improve the signal-to-noise ratio of gated laser active imaging detection, we have invented a self-triggered gated laser imaging device, which is equivalent to an electric vacuum amplifying device. The array gate uses the part of the image signal that has been amplified once as a trigger signal, and in turn triggers the gate of the micro-hole array. Imaged on a gated camera.

本发明之自触发选通激光成像装置其特征在于，如图1所示，玻璃窗口1封堵于绝缘壳体2一端，自该端在绝缘壳体2内部依次镶嵌光电阴极3、一级微通道板4、微孔阵列栅极5、二级微通道板6，荧光屏7封堵于绝缘壳体2另一端，荧光屏7出光一侧依次接光纤光锥8、选通摄像机9；微孔阵列栅极5其结构特点为：如图2所示，在圆形薄板状玻璃基体中沿轴向密布微米级通孔10，所有通孔10平行且与所述玻璃基体轴线成7～15°角，在所述玻璃基体顶面镀有金属膜作为触发信号旁路电极11；微孔阵列栅极5的底面与二级微通道板6的入射端面接触；触发信号旁路电极11接触发电路的触发信号输入端，触发电路的选通信号输出端分别与脉冲电源、控制电路各自的选通信号输入端连接，脉冲电源的两个电极端分别接一级微通道板4的出射端面电极和二级微通道板6的入射端面电极，在该两个电极之间加入50～100V反向电压或者200～250V正向电压；控制电路的驱动信号输出端接选通摄像机9的电子快门。The self-triggering gating laser imaging device of the present invention is characterized in that, as shown in FIG. 1 , the glass window 1 is blocked at one end of the insulating shell 2 , and the photocathode 3 , the first-level micro-electrode 3 and the first-level micro-electrode are sequentially embedded in the insulating shell 2 from this end. The channel plate 4, the micro-hole array grid 5, the secondary micro-channel plate 6, the fluorescent screen 7 is blocked on the other end of the insulating shell 2, and the light-emitting side of the fluorescent screen 7 is connected to the optical fiber cone 8 and the gating camera 9 in sequence; The structural features of the grid 5 are: as shown in FIG. 2 , micron-scale through holes 10 are densely distributed along the axial direction in the circular thin-plate glass substrate, and all through holes 10 are parallel and form an angle of 7 to 15° with the axis of the glass substrate. , a metal film is plated on the top surface of the glass substrate as the trigger signal bypass electrode 11; the bottom surface of the microporous array grid 5 is in contact with the incident end face of the secondary microchannel plate 6; the trigger signal bypass electrode 11 contacts the trigger circuit The trigger signal input terminal, the gate signal output terminal of the trigger circuit are respectively connected with the respective gate signal input terminals of the pulse power supply and the control circuit, and the two electrode terminals of the pulse power supply are respectively connected to the exit end face electrodes of the first-stage microchannel plate 4 and the two gate signal terminals. The incident end surface electrode of the stage microchannel plate 6 is added between the two electrodes with a reverse voltage of 50-100V or a forward voltage of 200-250V; the driving signal output end of the control circuit is connected to the electronic shutter of the gating camera 9 .

本发明之自触发选通激光成像装置其选通成像过程如下所述。The gated imaging process of the self-triggered gated laser imaging device of the present invention is as follows.

红外脉冲激光照射目标及背景后反射，产生的光学探测图像入射自触发选通激光成像装置，透过玻璃窗口1聚焦于光电阴极3，激发产生光电子，形成电子束图像，在外加正向电场作用下入射一级微通道板4增强图像；在常态下，脉冲电源在一级微通道板4的出射端面电极和二级微通道板6的入射端面电极之间加入50～100V反向电压，当自一级微通道板4出射的电子束图像在时间上处在两个激光脉冲之间，此时的电子束图像实际上对应的是背景噪光图像，即使得到一级微通道板4增强，依然较弱，将被所述反向电压阻止，或许此时的电子束图像较强，落到微孔阵列栅极5的触发信号旁路电极11上，产生电流并作为触发信号流向触发电路；由于已在一个具体的探测项目进行前，根据目标、背景方面的实际探测条件，为触发电路调整预设了一个电流阈值，由于 背景噪光图像对应的电子束图像产生的电流小于该电流阈值，触发电路不输出选通信号，背景噪光图像被彻底阻止；当自一级微通道板4 出射的电子束图像在时间上处在激光脉冲中，尽管此时的电子束图像仍处在反向电压下，在构成电子束图像的电子中一部分具有较大动能，到达触发信号旁路电极11并向触发电路输入触发电流，该触发电流大于预设的电流阈值，于是触发电路输出与激光脉冲时长相同的选通信号；脉冲电源收到选通信号后，瞬时将输出的反向电压转换为200～250V的正向电压，使得此时的电子束图像正常通过微孔阵列栅极5，由二级微通道板6再次放大，在正向高压作用下，透射到荧光屏7上，并被还原为光学图像，由光纤光锥8耦合给选通摄像机9；选通摄像机9的电子快门的常态为关闭，控制电路收到所述触发电路输出的选通信号后，经过延时处理作为驱动信号输出给选通摄像机9，驱动其电子快门开启，由选通摄像机9摄取所述光学图像。The infrared pulse laser irradiates the target and the background and then reflects, and the generated optical detection image is incident on the self-triggered gated laser imaging device, and is focused on the photocathode 3 through the glass window 1 to excite and generate photoelectrons to form an electron beam image. The first-stage microchannel plate 4 is incident on the bottom to enhance the image; under normal conditions, the pulse power supply adds a reverse voltage of 50-100V between the outgoing end-face electrode of the first-stage micro-channel plate 4 and the incident end-face electrode of the second-stage microchannel plate 6. When The electron beam image emitted from the primary microchannel plate 4 is located between two laser pulses in time, and the electron beam image at this time actually corresponds to the background noise image, even if the primary microchannel plate 4 is enhanced, It is still weak and will be blocked by the reverse voltage. Perhaps the electron beam image at this time is stronger, and it falls on the trigger signal bypass electrode 11 of the micro-hole array grid 5, generating current and flowing to the trigger circuit as a trigger signal; Before a specific detection project is carried out, according to the actual detection conditions of the target and background, a current threshold is preset for the adjustment of the trigger circuit. Since the current generated by the electron beam image corresponding to the background noise light image is less than the current threshold, The trigger circuit does not output the strobe signal, and the background noise light image is completely blocked; when the electron beam image emitted from the first-stage microchannel plate 4 is in the laser pulse in time, although the electron beam image at this time is still in the reverse direction Under the voltage, a part of the electrons constituting the electron beam image has a large kinetic energy, reaching the trigger signal bypass electrode 11 and inputting the trigger current to the trigger circuit. The trigger current is greater than the preset current threshold, so the trigger circuit outputs and the laser pulse duration The same gating signal; after the pulse power supply receives the gating signal, it instantly converts the output reverse voltage into a forward voltage of 200-250V, so that the electron beam image at this time normally passes through the micro-hole array grid 5, and is converted by two. The stage microchannel plate 6 is amplified again, and is transmitted to the fluorescent screen 7 under the action of positive high voltage, and is restored to an optical image, which is coupled to the gated camera 9 by the optical fiber light cone 8; the normal state of the electronic shutter of the gated camera 9 is After the control circuit receives the gating signal output by the trigger circuit, it is output to the gating camera 9 as a driving signal after delay processing, and drives its electronic shutter to open, and the gating camera 9 captures the optical image.

本发明其技术效果在于，利用激光探测图像信号能量的一部分，将其作为触发信号，同时，在发明中特别提出一种电控选通器件，即微孔阵列栅极5，收到达到阈值电流的触发信号，触发电路则向脉冲电源发送选通信号，脉冲电源则以改变电压方向的方式控制选通器件的通与关，这就是所谓的“自触发”。反向电压控制在50～100V范围内，使得不超过40％的电子束图像能量被旁路作为触发信号，何况所述电子束图像此前还经过了一次增强，更何况电子束图像的保留部分还有二次增益过程。这一选通方式还带来一个附带效果，那就是选通动态效果得到改善，这是因为选通过程是在一个十分集中的环节中完成。实际上，本发明还利用选通摄像机9中的电子快门进而延时二次选通，进一步提高激光探测图像信号的信噪比。The technical effect of the present invention lies in that a part of the energy of the image signal is detected by the laser as a trigger signal, and at the same time, an electronically controlled gating device is specially proposed in the invention, that is, the micro-hole array grid 5, which receives a current reaching the threshold value. The trigger circuit sends a gating signal to the pulse power supply, and the pulse power supply controls the on and off of the gating device by changing the voltage direction, which is the so-called "self-triggering". The reverse voltage is controlled in the range of 50-100V, so that no more than 40% of the electron beam image energy is bypassed as a trigger signal, not to mention that the electron beam image has been enhanced once before, not to mention that the remaining part of the electron beam image is still intact. There is a quadratic gain process. A side effect of this gating method is that the gating dynamics are improved because the gating process is done in a very focused session. In fact, the present invention also utilizes the electronic shutter in the gating camera 9 to further delay the secondary gating, so as to further improve the signal-to-noise ratio of the laser detection image signal.

附图说明Description of drawings

图1是本发明之自触发选通激光成像装置结构示意图，该图同时作为摘要附图。图2是本发明之自触发选通激光成像装置中的微孔阵列栅极结构局部放大剖视示意图。FIG. 1 is a schematic structural diagram of a self-triggered gated laser imaging device of the present invention, which is also used as an abstract drawing. FIG. 2 is a partial enlarged cross-sectional schematic view of the micro-hole array gate structure in the self-triggered gated laser imaging device of the present invention.

具体实施方式Detailed ways

本发明之自触发选通激光成像装置如图1所示。The self-triggered gated laser imaging device of the present invention is shown in FIG. 1 .

玻璃窗口1封堵于绝缘壳体2一端，玻璃窗口1材质为透红外玻璃。The glass window 1 is blocked at one end of the insulating housing 2, and the material of the glass window 1 is infrared transparent glass.

自该端在绝缘壳体2内部依次镶嵌光电阴极3、一级微通道板4、微孔阵列栅极5、二级微通道板6，荧光屏7封堵于绝缘壳体2另一端，荧光屏7出光一侧依次接光纤光锥8、选通摄像机9。The photocathode 3, the primary microchannel plate 4, the microporous array grid 5, and the secondary microchannel plate 6 are sequentially embedded in the insulating housing 2 from this end. The fluorescent screen 7 is blocked on the other end of the insulating housing 2. The light-emitting side is connected to the optical fiber cone 8 and the gating camera 9 in sequence.

所述光电阴极3厚度为5mm，直径为25mm，是一种GaAs光电阴极。The photocathode 3 has a thickness of 5mm and a diameter of 25mm, and is a GaAs photocathode.

所述一级微通道板4、二级微通道板6直径为27mm，有效口径为18.4mm，通道孔径为20μm，通道孔距为8μm，厚度为0.3mm，长径比为15。The primary microchannel plate 4 and the secondary microchannel plate 6 have a diameter of 27 mm, an effective diameter of 18.4 mm, a channel diameter of 20 μm, a channel hole spacing of 8 μm, a thickness of 0.3 mm, and an aspect ratio of 15.

微孔阵列栅极5其结构特点为：如图2所示，在圆形薄板状玻璃基体中沿轴向密布微米级通孔10，所有通孔10平行且与所述玻璃基体轴线成7～15°角，在所述玻璃基体顶面镀有金属膜作为触发信号旁路电极11；所述圆形薄板状玻璃基体的直径为23mm，厚度为0.3mm；通孔10孔径为一级微通道板4、二级微通道板6通道孔径的三分之一，鉴于一级微通道板4、二级微通道板6通道孔径20μm，确定通孔10孔径为6～7μm，这一比例有利于减小电子束图像像差；所述金属膜为铝膜，厚度为630nm，所述金属膜自所述玻璃基体顶面延伸到每个通孔10孔口深30nm的内壁上，以使电子束图像能量的40％由触发信号旁路电极11导向触发电路，在实现有效触发的同时，使电子束图像能量保留部分不超过60％，避免在由二级微通道板6进行二次增强时不至于发生饱和，从而提高探测图像的成像分辨率和动态范围。The structure of the micro-hole array grid 5 is as follows: as shown in FIG. 2 , micro-scale through holes 10 are densely distributed along the axial direction in the circular thin glass substrate, and all the through holes 10 are parallel and 7-7 to the axis of the glass substrate. At an angle of 15°, a metal film is plated on the top surface of the glass substrate as the trigger signal bypass electrode 11; the diameter of the circular thin-plate glass substrate is 23mm and the thickness is 0.3mm; the aperture of the through hole 10 is a first-level microchannel Plate 4 and the second-stage microchannel plate 6 are one-third of the channel diameter. Considering that the first-stage microchannel plate 4 and the second-stage microchannel plate 6 have a channel diameter of 20 μm, the diameter of the through hole 10 is determined to be 6-7 μm. This ratio is conducive to Reduce electron beam image aberration; the metal film is an aluminum film with a thickness of 630nm, and the metal film extends from the top surface of the glass substrate to the inner wall of each through hole with a depth of 30nm, so that the electron beam 40% of the image energy is guided by the trigger signal bypass electrode 11 to the trigger circuit. While achieving effective triggering, the remaining part of the electron beam image energy does not exceed 60%. As for saturation, the imaging resolution and dynamic range of the detection image are improved.

所述荧光屏7其结构特点为：在玻璃基底表面分布导电膜，导电材料为氧化铟锡(ITO) 或者掺氟氧化锡(FTO)，在导电膜上分布荧光层，荧光材料为ZnO或者CsPbX3(X：Cl、Br、I)。The structure of the fluorescent screen 7 is characterized in that a conductive film is distributed on the surface of the glass substrate, the conductive material is indium tin oxide (ITO) or fluorine-doped tin oxide (FTO), and a fluorescent layer is distributed on the conductive film, and the fluorescent material is ZnO or CsPbX 3 (X: Cl, Br, I).

光电阴极3与一级微通道板4之间的电压为200V；一级微通道板4、二级微通道板6各自的两端电压均为800～1000V；二级微通道板6与荧光屏7导电膜之间的电压为2000～4000V。The voltage between the photocathode 3 and the first-level microchannel plate 4 is 200V; the voltages at both ends of the first-level microchannel plate 4 and the second-level microchannel plate 6 are both 800-1000V; the second-level microchannel plate 6 and the phosphor screen 7 The voltage between the conductive films is 2000 to 4000V.

所述选通摄像机9的光电传感器件为CMOS或者ICCD。The photoelectric sensor device of the gated camera 9 is CMOS or ICCD.

微孔阵列栅极5的底面与二级微通道板6的入射端面接触；触发信号旁路电极11接触发电路的触发信号输入端，触发电路的选通信号输出端分别与脉冲电源、控制电路各自的选通信号输入端连接，脉冲电源的两个电极端分别接一级微通道板4的出射端面电极和二级微通道板6的入射端面电极，在该两个电极之间加入50～100V反向电压或者200～250V正向电压；控制电路的驱动信号输出端接选通摄像机9的电子快门。The bottom surface of the microhole array grid 5 is in contact with the incident end surface of the secondary microchannel plate 6; the trigger signal bypass electrode 11 is in contact with the trigger signal input end of the trigger circuit, and the gate signal output end of the trigger circuit is respectively connected with the pulse power supply and the control circuit. The respective gating signal input ends are connected, and the two electrode ends of the pulse power supply are respectively connected to the outgoing end face electrode of the first-stage microchannel plate 4 and the incident end face electrode of the second-stage microchannel plate 6. Between the two electrodes, add 50~ 100V reverse voltage or 200-250V forward voltage; the drive signal output end of the control circuit is connected to the electronic shutter of the strobe camera 9 .

Claims (8)

1.一种自触发选通激光成像装置，其特征在于，玻璃窗口(1)封堵于绝缘壳体(2)一端，自该端在绝缘壳体(2)内部依次镶嵌光电阴极(3)、一级微通道板(4)、微孔阵列栅极(5)、二级微通道板(6)，荧光屏(7)封堵于绝缘壳体(2)另一端，荧光屏(7)出光一侧依次接光纤光锥(8)、选通摄像机(9)；微孔阵列栅极(5)其结构特点为：在圆形薄板状玻璃基体中沿轴向密布微米级通孔(10)，所有通孔(10)平行且与所述玻璃基体轴线成7～15°角，在所述玻璃基体顶面镀有金属膜作为触发信号旁路电极(11)；微孔阵列栅极(5)的底面与二级微通道板(6)的入射端面接触；触发信号旁路电极(11)接触发电路的触发信号输入端，触发电路的选通信号输出端分别与脉冲电源、控制电路各自的选通信号输入端连接，脉冲电源的两个电极端分别接一级微通道板(4)的出射端面电极和二级微通道板(6)的入射端面电极，在该两个电极之间加入50～100V反向电压或者200～250V正向电压；控制电路的驱动信号输出端接选通摄像机(9)的电子快门。1. A self-triggering gating laser imaging device, characterized in that a glass window (1) is blocked at one end of an insulating housing (2), and photocathodes (3) are sequentially embedded in the insulating housing (2) from this end. , a first-level microchannel plate (4), a micro-hole array grid (5), a second-level microchannel plate (6), the fluorescent screen (7) is blocked at the other end of the insulating shell (2), and the fluorescent screen (7) emits light for a The side is connected to the optical fiber cone (8) and the gating camera (9) in sequence; the micro-hole array grid (5) has the structural characteristics of: the circular thin-plate glass matrix is densely distributed with micron-scale through holes (10) along the axial direction, All the through holes (10) are parallel and form an angle of 7-15° with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate as a trigger signal bypass electrode (11); a micro-hole array grid (5) The bottom surface of the trigger circuit is in contact with the incident end surface of the secondary microchannel plate (6); the trigger signal bypass electrode (11) contacts the trigger signal input end of the trigger circuit, and the gate signal output end of the trigger circuit is respectively connected to the pulse power supply and the control circuit respectively. The input end of the gating signal is connected, and the two electrode ends of the pulse power supply are respectively connected to the outgoing end face electrode of the first-stage microchannel plate (4) and the incident end face electrode of the second-stage microchannel plate (6). 50-100V reverse voltage or 200-250V forward voltage; the driving signal output end of the control circuit is connected to the electronic shutter of the gating camera (9). 2.根据权利要求1所述的自触发选通激光成像装置，其特征在于，玻璃窗口(1)材质为透红外玻璃。2 . The self-triggered gating laser imaging device according to claim 1 , wherein the glass window ( 1 ) is made of infrared transparent glass. 3 . 3.根据权利要求1所述的自触发选通激光成像装置，其特征在于，所述光电阴极(3)厚度为5mm，直径为25mm，是一种GaAs光电阴极。3 . The self-triggered gated laser imaging device according to claim 1 , wherein the photocathode ( 3 ) has a thickness of 5 mm and a diameter of 25 mm, and is a GaAs photocathode. 4 . 4.根据权利要求1所述的自触发选通激光成像装置，其特征在于，所述一级微通道板(4)、二级微通道板(6)直径为27mm，有效口径为18.4mm，通道孔径为20μm，通道孔距为8μm，厚度为0.3mm，长径比为15。4. The self-triggered gating laser imaging device according to claim 1, wherein the diameter of the first-stage microchannel plate (4) and the second-stage microchannel plate (6) is 27 mm, and the effective diameter is 18.4 mm, The channel diameter is 20 μm, the channel spacing is 8 μm, the thickness is 0.3 mm, and the aspect ratio is 15. 5.根据权利要求1所述的自触发选通激光成像装置，其特征在于，所述圆形薄板状玻璃基体的直径为23mm，厚度为0.3mm；通孔(10)孔径为一级微通道板(4)、二级微通道板(6)通道孔径的三分之一；所述金属膜为铝膜，厚度为630nm，所述金属膜自所述玻璃基体顶面延伸到每个通孔(10)孔口深30nm的内壁上。5 . The self-triggered gated laser imaging device according to claim 1 , wherein the circular thin plate glass substrate has a diameter of 23 mm and a thickness of 0.3 mm; the aperture of the through hole (10) is a first-level microchannel. 6 . Plate (4), one-third of the channel aperture of the secondary microchannel plate (6); the metal film is an aluminum film with a thickness of 630 nm, and the metal film extends from the top surface of the glass substrate to each through hole (10) On the inner wall of the orifice with a depth of 30 nm. 6.根据权利要求1所述的自触发选通激光成像装置，其特征在于，所述荧光屏(7)其结构特点为：在玻璃基底表面分布导电膜，导电材料为氧化铟锡或者掺氟氧化锡，在导电膜上分布荧光层，荧光材料为ZnO或者CsPbX3，X为Cl、Br、I之一。6 . The self-triggered gated laser imaging device according to claim 1 , wherein the fluorescent screen ( 7 ) is characterized in that a conductive film is distributed on the surface of the glass substrate, and the conductive material is indium tin oxide or fluorine-doped oxide. 7 . Tin, a fluorescent layer is distributed on the conductive film, the fluorescent material is ZnO or CsPbX 3 , and X is one of Cl, Br, and I. 7.根据权利要求1所述的自触发选通激光成像装置，其特征在于，光电阴极(3)与一级微通道板(4)之间的电压为200V；一级微通道板(4)、二级微通道板(6)各自的两端电压均为800～1000V；二级微通道板(6)与荧光屏(7)之间的电压为2000～4000V。7. The self-triggered gating laser imaging device according to claim 1, wherein the voltage between the photocathode (3) and the first-level microchannel plate (4) is 200V; the first-level microchannel plate (4) and the voltages at both ends of the secondary microchannel plate (6) are 800-1000V; the voltage between the secondary microchannel plate (6) and the phosphor screen (7) is 2000-4000V. 8.根据权利要求1所述的自触发选通激光成像装置，其特征在于，所述选通摄像机(9)的光电传感器件为CMOS或者ICCD。8 . The self-triggered gating laser imaging device according to claim 1 , wherein the photoelectric sensing device of the gating camera ( 9 ) is CMOS or ICCD. 9 .
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