CN110095785B - Self-triggering gating laser imaging device - Google Patents
Self-triggering gating laser imaging device Download PDFInfo
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- CN110095785B CN110095785B CN201910341793.6A CN201910341793A CN110095785B CN 110095785 B CN110095785 B CN 110095785B CN 201910341793 A CN201910341793 A CN 201910341793A CN 110095785 B CN110095785 B CN 110095785B
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- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
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Abstract
Self-triggering gating laser imaging device belongs to the technical field of laser active imaging detection. The signal-to-noise ratio of the imaging detection of the prior art is to be improved. The micropore array grid has the following structural characteristics: micron-sized through holes are densely distributed in a circular sheet-shaped glass substrate along the axial direction, all the through holes are parallel to each other and form an angle of 7-15 degrees with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate to serve as a trigger signal bypass electrode; the bottom surface of the micropore array grid is contacted with the incident end surface of the secondary microchannel plate; the trigger signal bypass electrode is in contact with a trigger signal input end of the power generation circuit, a gating signal output end of the trigger circuit is respectively connected with respective gating signal input ends of the pulse power supply and the control circuit, two electrode ends of the pulse power supply are respectively connected with an emergent end face electrode of the first-stage microchannel plate and an incident end face electrode of the second-stage microchannel plate, and 50-100V reverse voltage or 200-250V forward voltage is added between the two electrodes; the driving signal output end of the control circuit is connected with the electronic shutter of the gating camera.
Description
Technical Field
The invention relates to a self-triggering gating laser imaging device, and belongs to the technical field of laser active imaging detection.
Background
The existing distance gating laser active imaging detection technology is that a laser imaging light source emits infrared short pulse laser, the infrared short pulse laser is collimated and split into beams, and one beam of the beam illuminates a target and then is reflected by the target to form a detection image signal and is imaged on a gating camera; the other beam of illumination target is reflected by the target to become an external trigger source and is received by an external trigger device (such as APD) to be used as a delay reference pulse; determining the delay time of a synchronous control circuit according to the distance between a laser imaging light source and a target, determining the opening duration of a gating door according to the imaging detection depth of field, wherein at the gating moment, the detection image signal just enters a gating camera to be gated for imaging, and the gating door is closed at the rest time. The scheme effectively eliminates background stray light entering the gating camera during non-pulse imaging time, and improves the signal to noise ratio of imaging detection. The light splitting scheme adopted by the scheme only ensures that a part of laser is not used for imaging, the optical power of a detection image signal is reduced, and the improvement of the signal to noise ratio of imaging detection is not facilitated.
Disclosure of Invention
In order to further improve the signal-to-noise ratio of gated laser active imaging detection, a self-triggering gated laser imaging device is invented, which is equivalent to an electric vacuum amplifying device, but an electric control gating device, namely a micropore array grid, is particularly provided, wherein a part of an image signal which is subjected to primary amplification by a bypass of the electric control gating device is used as a triggering signal, the micropore array grid is triggered to gate in reverse, the image signal subjected to primary amplification passes through the micropore array grid and then is amplified once again, and finally, the image is imaged in a gating camera.
The self-triggering gating laser imaging device is characterized in that as shown in figure 1, a glass window 1 is plugged at one end of an insulating shell 2, a photocathode 3, a primary microchannel plate 4, a micropore array grid 5 and a secondary microchannel plate 6 are sequentially embedded in the insulating shell 2 from the end, a fluorescent screen 7 is plugged at the other end of the insulating shell 2, and the light emitting side of the fluorescent screen 7 is sequentially connected with a fiber optic cone 8 and a gating camera 9; the micropore array grid 5 has the structural characteristics that: as shown in fig. 2, micron-sized through holes 10 are densely distributed in a circular thin plate-shaped glass substrate along the axial direction, all the through holes 10 are parallel and form an angle of 7-15 degrees with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate to serve as a trigger signal bypass electrode 11; the bottom surface of the micropore array grid 5 is contacted with the incident end surface of the secondary microchannel plate 6; the trigger signal bypass electrode 11 is in contact with a trigger signal input end of the power generation circuit, a gating signal output end of the trigger circuit is respectively connected with respective gating signal input ends of a pulse power supply and a control circuit, two electrode ends of the pulse power supply are respectively connected with an emergent end face electrode of the first-stage microchannel plate 4 and an incident end face electrode of the second-stage microchannel plate 6, and 50-100V reverse voltage or 200-250V forward voltage is added between the two electrodes; the driving signal output end of the control circuit is connected with the electronic shutter of the gating camera 9.
The gating imaging process of the self-triggering gating laser imaging device of the invention is as follows.
Infrared pulse laser irradiates a target and a background and then reflects, a generated optical detection image is incident to a self-triggering gating laser imaging device, is focused on a photoelectric cathode 3 through a glass window 1, is excited to generate photoelectrons to form an electron beam image, and is incident to a primary microchannel plate 4 to enhance the image under the action of an externally applied forward electric field; under a normal state, a pulse power supply adds 50-100V reverse voltage between an emergent end face electrode of a first-stage microchannel plate 4 and an incident end face electrode of a second-stage microchannel plate 6, when an electron beam image emitted from the first-stage microchannel plate 4 is between two laser pulses in time, the electron beam image at the moment corresponds to a background noise light image actually, even if the first-stage microchannel plate 4 is enhanced, the image is still weak and will be prevented by the reverse voltage, and perhaps the electron beam image at the moment is strong and falls on a trigger signal bypass electrode 11 of a micropore array grid 5 to generate current and serve as a trigger signal to flow to a trigger circuit; before a specific detection item is carried out, a current threshold value is preset for the trigger circuit according to the actual detection conditions of the target and the background, and as the current generated by the electron beam image corresponding to the background noise light image is smaller than the current threshold value, the trigger circuit does not output gating signals, and the background noise light image is completely prevented; when the electron beam image emitted from the first-stage microchannel plate 4 is in the laser pulse in terms of time, although the electron beam image is still under the reverse voltage at this time, a part of electrons constituting the electron beam image has large kinetic energy, reaches the trigger signal bypass electrode 11 and inputs a trigger current to the trigger circuit, the trigger current is greater than a preset current threshold value, and then the trigger circuit outputs a gating signal with the same duration as the laser pulse; after receiving a gating signal, the pulse power supply instantaneously converts the output reverse voltage into a forward voltage of 200-250V, so that the electron beam image at the moment normally passes through the micropore array grid 5, is amplified again by the secondary microchannel plate 6, is transmitted to the fluorescent screen 7 under the action of the forward high voltage, is restored into an optical image, and is coupled to the gating camera 9 by the optical fiber light cone 8; the electronic shutter of the gating camera 9 is closed normally, after receiving the gating signal output by the trigger circuit, the control circuit outputs the gating signal to the gating camera 9 as a driving signal after time delay processing, drives the electronic shutter of the gating camera to be opened, and the gating camera 9 captures the optical image.
The invention has the technical effects that a part of image signal energy is detected by using laser and is used as a trigger signal, meanwhile, the invention particularly provides an electric control gating device, namely a micropore array grid 5, a trigger circuit sends a gating signal to a pulse power supply when receiving the trigger signal reaching threshold current, and the pulse power supply controls the gating device to be switched on and off in a mode of changing voltage direction, namely self-triggering. The reverse voltage is controlled within the range of 50-100V, so that no more than 40% of the energy of the electron beam image is bypassed to be used as a trigger signal, the electron beam image is subjected to primary enhancement before, and a reserved part of the electron beam image is subjected to a secondary gain process. This gating approach also has the side effect that the dynamic effect of gating is improved, since the gating process is done in a very centralized fashion. In fact, the present invention further uses the electronic shutter in the gating camera 9 to further delay the secondary gating, thereby further improving the signal-to-noise ratio of the laser detection image signal.
Drawings
FIG. 1 is a schematic diagram of a self-triggered gated laser imaging device according to the present invention, which is also taken as an abstract drawing. FIG. 2 is a schematic enlarged partial cross-sectional view of a gate structure of a micro-hole array in a self-triggered gated laser imaging device according to the present invention.
Detailed Description
The self-triggering gated laser imaging device of the present invention is shown in FIG. 1.
The glass window 1 is plugged at one end of the insulating shell 2, and the glass window 1 is made of infrared transmitting glass.
From this end, inlay photocathode 3, one-level microchannel plate 4, micropore array grid 5, second grade microchannel plate 6 in insulating casing 2 inside in proper order, fluorescent screen 7 shutoff is in insulating casing 2 other end, and fluorescent screen 7 light-emitting side connects gradually optic fibre light cone 8, gating camera 9.
The photocathode 3 is 5mm in thickness and 25mm in diameter, and is a GaAs photocathode.
The diameters of the first-stage micro-channel plate 4 and the second-stage micro-channel plate 6 are 27mm, the effective caliber is 18.4mm, the aperture of the channel is 20 micrometers, the pitch of the channel holes is 8 micrometers, the thickness is 0.3mm, and the length-diameter ratio is 15.
The micropore array grid 5 has the structural characteristics that: as shown in fig. 2, micron-sized through holes 10 are densely distributed in a circular thin plate-shaped glass substrate along the axial direction, all the through holes 10 are parallel and form an angle of 7-15 degrees with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate to serve as a trigger signal bypass electrode 11; the diameter of the round sheet-shaped glass substrate is 23mm, and the thickness of the round sheet-shaped glass substrate is 0.3 mm; the aperture of the through hole 10 is one third of the aperture of the first-stage microchannel plate 4 and the aperture of the second-stage microchannel plate 6, and the aperture of the through hole 10 is determined to be 6-7 mu m in view of the 20 mu m of the aperture of the first-stage microchannel plate 4 and the aperture of the second-stage microchannel plate 6, which is favorable for reducing the image aberration of the electron beam; the metal film is an aluminum film, the thickness of the metal film is 630nm, the metal film extends from the top surface of the glass substrate to the inner wall of each through hole 10 with the aperture depth of 30nm, so that 40% of the energy of an electron beam image is guided to the trigger circuit by the trigger signal bypass electrode 11, the energy retention part of the electron beam image is not more than 60% while effective triggering is realized, saturation is avoided when secondary enhancement is carried out by the secondary microchannel plate 6, and the imaging resolution and the dynamic range of a detection image are improved.
The fluorescent screen 7 has the structural characteristics that: a conductive film is distributed on the surface of the glass substrate, the conductive material is Indium Tin Oxide (ITO) or fluorine-doped tin oxide (FTO), a fluorescent layer is distributed on the conductive film, and the fluorescent material is ZnO or CsPbX3(X:Cl、Br、I)。
The voltage between the photocathode 3 and the primary microchannel plate 4 is 200V; the voltages at two ends of the first-stage micro-channel plate 4 and the second-stage micro-channel plate 6 are both 800-1000V; the voltage between the secondary microchannel plate 6 and the fluorescent screen 7 conducting film is 2000-4000V.
The photoelectric sensor device of the strobe camera 9 is CMOS or ICCD.
The bottom surface of the micropore array grid 5 is contacted with the incident end surface of the secondary microchannel plate 6; the trigger signal bypass electrode 11 is in contact with a trigger signal input end of the power generation circuit, a gating signal output end of the trigger circuit is respectively connected with respective gating signal input ends of a pulse power supply and a control circuit, two electrode ends of the pulse power supply are respectively connected with an emergent end face electrode of the first-stage microchannel plate 4 and an incident end face electrode of the second-stage microchannel plate 6, and 50-100V reverse voltage or 200-250V forward voltage is added between the two electrodes; the driving signal output end of the control circuit is connected with the electronic shutter of the gating camera 9.
Claims (8)
1. A self-triggering gating laser imaging device is characterized in that a glass window (1) is plugged at one end of an insulating shell (2), a photocathode (3), a primary microchannel plate (4), a micropore array grid (5) and a secondary microchannel plate (6) are sequentially embedded in the insulating shell (2) from the end, a fluorescent screen (7) is plugged at the other end of the insulating shell (2), and the light-emitting side of the fluorescent screen (7) is sequentially connected with a fiber optic cone (8) and a gating camera (9); the micropore array grid (5) has the structural characteristics that: micron-sized through holes (10) are densely distributed in a circular sheet-shaped glass substrate along the axial direction, all the through holes (10) are parallel and form an angle of 7-15 degrees with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate to serve as a trigger signal bypass electrode (11); the bottom surface of the micropore array grid (5) is contacted with the incident end surface of the secondary microchannel plate (6); the trigger signal bypass electrode (11) is in contact with a trigger signal input end of the power generation circuit, a gating signal output end of the trigger circuit is respectively connected with respective gating signal input ends of a pulse power supply and a control circuit, two electrode ends of the pulse power supply are respectively connected with an emergent end face electrode of the first-stage micro-channel plate (4) and an incident end face electrode of the second-stage micro-channel plate (6), and 50-100V reverse voltage or 200-250V forward voltage is added between the two electrodes; the driving signal output end of the control circuit is connected with an electronic shutter of the gating camera (9).
2. The self-triggering gated laser imaging device according to claim 1, wherein the glass window (1) is made of infrared transparent glass.
3. The self-triggered-gated laser imaging device as claimed in claim 1, wherein the photocathode (3) is 5mm thick and 25mm in diameter and is a GaAs photocathode.
4. The self-triggering gated laser imaging device according to claim 1, wherein the primary microchannel plate (4) and the secondary microchannel plate (6) have a diameter of 27mm, an effective aperture of 18.4mm, a channel aperture of 20 μm, a channel pitch of 8 μm, a thickness of 0.3mm, and an aspect ratio of 15.
5. The self-triggered-gating laser imaging device according to claim 1, wherein the circular thin plate-like glass substrate has a diameter of 23mm and a thickness of 0.3 mm; the aperture of the through hole (10) is one third of the aperture of the first-stage micro-channel plate (4) and the second-stage micro-channel plate (6); the metal film is an aluminum film, the thickness of the metal film is 630nm, and the metal film extends from the top surface of the glass substrate to the inner wall of each through hole (10) with the aperture depth of 30 nm.
6. The self-triggering gated laser imaging device of claim 1, wherein the phosphor screen (7) is structurally characterized by: a conductive film is distributed on the surface of the glass substrate, the conductive material is indium tin oxide or fluorine-doped tin oxide, a fluorescent layer is distributed on the conductive film, and the fluorescent material is ZnO or CsPbX3And X is one of Cl, Br and I.
7. The self-triggered-gating laser imaging device according to claim 1, wherein the voltage between the photocathode (3) and the primary microchannel plate (4) is 200V; the voltages at two ends of the first-stage micro-channel plate (4) and the second-stage micro-channel plate (6) are both 800-1000V; the voltage between the secondary microchannel plate (6) and the fluorescent screen (7) is 2000-4000V.
8. The self-triggered gating laser imaging device according to claim 1, wherein the photosensor element of the gating camera (9) is CMOS or ICCD.
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