CN109975828B - Self-triggering gating laser imaging method - Google Patents

Self-triggering gating laser imaging method Download PDF

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CN109975828B
CN109975828B CN201910340576.5A CN201910340576A CN109975828B CN 109975828 B CN109975828 B CN 109975828B CN 201910340576 A CN201910340576 A CN 201910340576A CN 109975828 B CN109975828 B CN 109975828B
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母一宁
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Changchun University of Science and Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
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    • G01S7/4818—Constructional features, e.g. arrangements of optical elements using optical fibres

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Abstract

A self-triggering gating laser imaging method belongs to the technical field of laser active imaging detection. The self-triggering gating is characterized in that under a normal state, a pulse power supply adds 50-100V reverse voltage between an emergent end face electrode of a first-stage micro-channel plate and an incident end face electrode of a second-stage micro-channel plate, when an electron beam image emitted from the first-stage micro-channel plate is between two laser pulses in time, the electron beam image at the moment corresponds to a background noise light image actually, and the background noise light image is prevented by the reverse voltage; when an electron beam image emitted from the first-stage microchannel plate is in a laser pulse in time, electrons with a part of larger kinetic energy of the electron beam image reach a trigger signal bypass electrode and input trigger current to a trigger circuit, wherein the trigger current is larger than a preset current threshold value, so that the trigger circuit outputs a gating signal with the same duration as the laser pulse; and after receiving the gating signal, the pulse power supply instantaneously converts the output reverse voltage into a forward voltage of 200-250V, so that the electron beam image at the moment normally passes through the micropore array grid.

Description

自触发选通激光成像方法Self-triggered gated laser imaging method

技术领域technical field

本发明涉及一种自触发选通激光成像方法，属于激光主动成像探测技术领域。The invention relates to a self-triggering gating laser imaging method, which belongs to the technical field of laser active imaging detection.

背景技术Background technique

现有距离选通激光主动成像探测技术是由激光成像光源发出红外短脉冲激光，经准直后分束，一束照明目标后由目标反射成为探测图像信号并成像于选通摄像机；另一束照明目标后由目标反射成为外部触发源并由外部触发器件(如APD)接收，作为延时基准脉冲；根据激光成像光源到目标之间的距离确定同步控制电路的延迟时间，根据成像探测景深确定选通门开启的持续时间，在选通瞬间，所述探测图像信号刚好进入选通摄像机选通成像，其余时间选通门关闭。该方案有效去除非脉冲成像时间背景杂光进入选通摄像机，提高成像探测信噪比。只是该方案采取的分光方案使得一部分激光并未用于成像，势必降低探测图像信号光功率，不利于成像探测信噪比的提高。The existing range-gated laser active imaging detection technology is that a laser imaging light source emits an infrared short pulse laser, which is collimated and then split into beams. One beam illuminates the target and is reflected by the target to become a detection image signal and imaged on the gating camera; After illuminating the target, it is reflected by the target to become an external trigger source and received by an external trigger device (such as APD) as a delay reference pulse; the delay time of the synchronous control circuit is determined according to the distance between the laser imaging light source and the target, and the depth of field is determined according to the imaging detection. The duration of the gate opening is that at the moment of gate, the detection image signal just enters the gate camera for gate imaging, and the gate is closed for the rest of the time. The scheme effectively removes the background stray light entering the gated camera during non-pulse imaging time, and improves the signal-to-noise ratio of imaging detection. However, the spectroscopic scheme adopted in this scheme makes some lasers not used for imaging, which will inevitably reduce the optical power of the detection image signal, which is not conducive to the improvement of the imaging detection signal-to-noise ratio.

发明内容SUMMARY OF THE INVENTION

为了进一步提高选通激光主动成像探测信噪比，我们发明了一种自触发选通激光成像方法，以一种电真空放大器件为主体，旁路已经经过一次放大的图像信号的部分作为触发信号，触发微孔阵列栅极选通，经过一次放大的图像信号通过微孔阵列栅极后再放大一次，最后成像于选通摄像机。In order to further improve the detection signal-to-noise ratio of gated laser active imaging, we have invented a self-triggered gated laser imaging method, which takes an electric vacuum amplifier as the main body and bypasses the part of the image signal that has been amplified once as the trigger signal , trigger the gate of the micro-hole array, the image signal amplified once passes through the gate of the micro-hole array and then amplified again, and finally imaged on the gated camera.

本发明之自触发选通激光成像方法其特征在于，如图1所示，红外脉冲激光照射目标及背景后反射，产生的光学探测图像入射一种自触发选通激光成像装置，透过玻璃窗口1聚焦于光电阴极3，激发产生光电子，形成电子束图像，在外加正向电场作用下入射一级微通道板4增强图像；在常态下，脉冲电源在一级微通道板4的出射端面电极和二级微通道板6的入射端面电极之间加入50～100V反向电压，当自一级微通道板4出射的电子束图像在时间上处在两个激光脉冲之间，此时的电子束图像实际上对应的是背景噪光图像，即使得到一级微通道板4增强，依然较弱，将被所述反向电压阻止，或许此时的电子束图像较强，落到微孔阵列栅极5的触发信号旁路电极11上，产生电流并作为触发信号流向触发电路；由于已在一个具体的探测项目进行前，根据目标、背景方面的实际探测条件，为触发电路调整预设了一个电流阈值，由与背景噪光图像对应的电子束图像产生的电流小于该电流阈值，触发电路不输出选通信号，背景噪光图像被彻底阻止；当自一级微通道板4出射的电子束图像在时间上处在激光脉冲中，尽管此时的电子束图像仍处在反向电压下，在构成电子束图像的电子中一部分具有较大动能，到达触发信号旁路电极11并向触发电路输入触发电流，该触发电流大于预设的电流阈值，于是触发电路输出与激光脉冲时长相同的选通信号；脉冲电源收到选通信号后，瞬时将输出的反向电压转换为200～250V的正向电压，使得此时的电子束图像正常通过微孔阵列栅极5，由二级微通道板6再次放大，在正向高压作用下，透射到荧光屏7上，并被还原为光学图像，由光纤光锥8耦合给选通摄像机9。The self-triggered gated laser imaging method of the present invention is characterized in that, as shown in FIG. 1 , the infrared pulsed laser irradiates the target and the background and then reflects, and the generated optical detection image is incident on a self-triggered gated laser imaging device, and passes through the glass window. 1 Focus on the photocathode 3, excite and generate photoelectrons, form an electron beam image, and enter the first-level microchannel plate 4 under the action of an external positive electric field to enhance the image; A reverse voltage of 50 to 100V is added between the incident end face electrode of the secondary microchannel plate 6 and the electron beam emitted from the primary microchannel plate 4 is between two laser pulses in time. The beam image actually corresponds to the background noise light image. Even if the first-level microchannel plate 4 is enhanced, it is still weak and will be blocked by the reverse voltage. Perhaps the electron beam image at this time is strong and falls on the microwell array. The trigger signal of the gate 5 bypasses the electrode 11, and a current is generated and flows to the trigger circuit as a trigger signal; because before a specific detection project is carried out, according to the actual detection conditions of the target and the background, the adjustment of the trigger circuit is preset. A current threshold value, the current generated by the electron beam image corresponding to the background noise light image is less than the current threshold value, the trigger circuit does not output the gating signal, and the background noise light image is completely blocked; The beam image is in the laser pulse in time, although the electron beam image at this time is still under the reverse voltage, some of the electrons constituting the electron beam image have a large kinetic energy, reach the trigger signal bypass electrode 11 and trigger the trigger signal. The trigger current is input to the circuit, and the trigger current is greater than the preset current threshold, so the trigger circuit outputs a gating signal with the same duration as the laser pulse; after the pulse power supply receives the gating signal, it instantly converts the output reverse voltage to 200-250V The forward voltage of the electron beam at this time makes the electron beam image at this time normally pass through the micro-hole array grid 5, and is amplified again by the secondary micro-channel plate 6. Under the action of the forward high voltage, it is transmitted to the fluorescent screen 7 and restored to an optical image. , which is coupled to the gated camera 9 by the optical fiber cone 8 .

一种有助于实现本发明之自触发选通激光成像方法的自触发选通激光成像装置如下所述。A self-triggered gated laser imaging device that is helpful for realizing the self-triggered gated laser imaging method of the present invention is as follows.

如图1所示，玻璃窗口1封堵于绝缘壳体2一端，自该端在绝缘壳体2内部依次镶嵌光电阴极3、一级微通道板4、微孔阵列栅极5、二级微通道板6，荧光屏7封堵于绝缘壳体2另一端，荧光屏7出光一侧依次接光纤光锥8、选通摄像机9；微孔阵列栅极5其结构特点为：如图2所示，在圆形薄板状玻璃基体中沿轴向密布微米级通孔10，所有通孔10平行且与所述玻璃基体轴线成7～15°角，在所述玻璃基体顶面镀有金属膜作为触发信号旁路电极11；微孔阵列栅极5的底面与二级微通道板6的入射端面接触；触发信号旁路电极11接触发电路的触发信号输入端，触发电路的选通信号输出端分别与脉冲电源、控制电路各自的选通信号输入端连接，脉冲电源的两个电极端分别接一级微通道板4的出射端面电极和二级微通道板6的入射端面电极，在该两个电极之间加入50～100V反向电压或者200～250V正向电压；控制电路的驱动信号输出端接选通摄像机9的电子快门。As shown in FIG. 1 , the glass window 1 is blocked at one end of the insulating casing 2 , and the photocathode 3 , the first-stage microchannel plate 4 , the micro-hole array grid 5 , the second-stage micro-channel plate 4 are sequentially embedded in the insulating casing 2 from this end. The channel plate 6 and the fluorescent screen 7 are blocked on the other end of the insulating shell 2, and the light-emitting side of the fluorescent screen 7 is connected to the optical fiber light cone 8 and the gating camera 9 in turn; Micron-scale through holes 10 are densely distributed along the axial direction in the circular thin glass substrate, all through holes 10 are parallel and form an angle of 7-15° with the axis of the glass substrate, and a metal film is plated on the top surface of the glass substrate as a trigger The signal bypass electrode 11; the bottom surface of the microhole array grid 5 is in contact with the incident end surface of the secondary microchannel plate 6; the trigger signal bypass electrode 11 contacts the trigger signal input end of the trigger circuit, and the gate signal output end of the trigger circuit is respectively It is connected with the respective gating signal input ends of the pulse power supply and the control circuit, and the two electrode ends of the pulse power supply are respectively connected to the exit end face electrode of the first stage microchannel plate 4 and the incident end face electrode of the second stage microchannel plate 6. A reverse voltage of 50-100V or a forward voltage of 200-250V is added between the electrodes; the driving signal output end of the control circuit is connected to the electronic shutter of the gating camera 9 .

本发明其技术效果在于，本发明利用激光探测图像信号能量的一部分，将其作为触发信号，同时，在发明中特别提出一种电控选通器件，即微孔阵列栅极5，收到达到阈值电流的触发信号，触发电路则向脉冲电源发送选通信号，脉冲电源则以改变电压方向的方式控制选通器件的通与关，这就是所谓的“自触发”。反向电压控制在50～100V范围内，使得不超过40％的电子束图像能量被旁路作为触发信号，何况所述电子束图像此前还经过了一次增强，更何况电子束图像的保留部分还有二次增益过程。这一选通方式还带来一个附带效果，那就是选通动态效果得到改善，这是因为选通过程是在一个十分集中的环节中完成。The technical effect of the present invention is that the present invention utilizes a part of the energy of the laser to detect the image signal as a trigger signal, and at the same time, an electronically controlled gating device is specially proposed in the invention, that is, the micro-hole array gate 5, which can reach the The trigger signal of the threshold current, the trigger circuit sends a gating signal to the pulse power supply, and the pulse power supply controls the on and off of the gating device by changing the voltage direction, which is the so-called "self-triggering". The reverse voltage is controlled in the range of 50-100V, so that no more than 40% of the electron beam image energy is bypassed as a trigger signal, not to mention that the electron beam image has been enhanced once before, not to mention that the remaining part of the electron beam image is still intact. There is a quadratic gain process. A side effect of this gating method is that the gating dynamics are improved because the gating process is done in a very focused session.

附图说明Description of drawings

图1是本发明之自触发选通激光成像方法选通成像过程示意图，该图也是一种有助于本发明实现的自触发选通激光成像装置结构示意图，该图同时作为摘要附图。图2是一种有助于本发明实现的自触发选通激光成像装置中的微孔阵列栅极结构局部放大剖视示意图。FIG. 1 is a schematic diagram of the gating imaging process of the self-triggering gating laser imaging method of the present invention, which is also a structural schematic diagram of a self-triggering and gating laser imaging device that is helpful for the realization of the present invention, and the figure is also an abstract drawing. FIG. 2 is a partial enlarged cross-sectional schematic view of a micro-hole array gate structure in a self-triggered gating laser imaging device that is helpful for the realization of the present invention.

具体实施方式Detailed ways

本发明之自触发选通激光成像方法的一个非必要特征是选通摄像机9的电子快门的常态为关闭，触发电路输出的选通信号一部分传送给控制电路，经过延时处理作为驱动信号输出给选通摄像机9，驱动其电子快门开启，由选通摄像机9摄取所述光学图像。可见，本发明利用选通摄像机9中的电子快门实现二次选通，进一步提高激光探测图像信号的信噪比。A non-essential feature of the self-triggering gating laser imaging method of the present invention is that the electronic shutter of the gating camera 9 is normally closed, and part of the gating signal output by the trigger circuit is transmitted to the control circuit, and is output as a driving signal to the control circuit after delay processing. The gated camera 9 is driven to open its electronic shutter, and the optical image is captured by the gated camera 9 . It can be seen that the present invention utilizes the electronic shutter in the gating camera 9 to realize secondary gating, and further improves the signal-to-noise ratio of the laser detection image signal.

另外，本发明设定了以下四个工作电压，光电阴极3与一级微通道板4之间的电压V1为200V；一级微通道板4、二级微通道板6各自的两端电压V2、V3均为800～1000V；二级微通道板6与荧光屏7导电膜之间的电压V4为2000～4000V。In addition, the present invention sets the following four working voltages, the voltage V1 between the photocathode 3 and the first-level microchannel plate 4 is 200V; the voltages at both ends of the first-level microchannel plate 4 and the second-level microchannel plate 6 respectively Both V 2 and V 3 are 800-1000V; the voltage V 4 between the secondary microchannel plate 6 and the conductive film of the phosphor screen 7 is 2000-4000V.

Claims (3)

1.一种自触发选通激光成像方法，其特征在于，红外脉冲激光照射目标及背景后反射，产生的光学探测图像入射一种自触发选通激光成像装置，透过玻璃窗口聚焦于光电阴极，激发产生光电子，形成电子束图像，在外加正向电场作用下入射一级微通道板增强图像；在常态下，脉冲电源在一级微通道板的出射端面电极和二级微通道板的入射端面电极之间加入50～100V反向电压，当自一级微通道板出射的电子束图像在时间上处在两个激光脉冲之间，此时的电子束图像实际上对应的是背景噪光图像，即使得到一级微通道板增强，依然较弱，将被所述反向电压阻止，或许此时的电子束图像较强，落到微孔阵列栅极的触发信号旁路电极上，产生电流并作为触发信号流向触发电路；由于已在一个具体的探测项目进行前，根据目标、背景方面的实际探测条件，为触发电路调整预设了一个电流阈值，由与背景噪光图像对应的电子束图像产生的电流小于该电流阈值，触发电路不输出选通信号，背景噪光图像被彻底阻止；当自一级微通道板出射的电子束图像在时间上处在激光脉冲中，尽管此时的电子束图像仍处在反向电压下，在构成电子束图像的电子中一部分具有较大动能，到达触发信号旁路电极并向触发电路输入触发电流，该触发电流大于预设的电流阈值，于是触发电路输出与激光脉冲时长相同的选通信号；脉冲电源收到选通信号后，瞬时将输出的反向电压转换为200～250V的正向电压，使得此时的电子束图像正常通过微孔阵列栅极，由二级微通道板再次放大，在正向高压作用下，透射到荧光屏上，并被还原为光学图像，由光纤光锥耦合给选通摄像机。1. a self-triggered gating laser imaging method, it is characterized in that, after infrared pulse laser irradiation target and background reflection, the optical detection image that produces is incident a kind of self-triggering gating laser imaging device, is focused on photocathode through glass window , excited to generate photoelectrons to form an electron beam image, which is incident on the first-level microchannel plate to enhance the image under the action of an external positive electric field; under normal conditions, the pulsed power supply is applied to the exit electrode of the first-level microchannel plate and the incidence of the second-level microchannel plate. A reverse voltage of 50-100V is added between the end-face electrodes. When the electron beam image emitted from the first-stage microchannel plate is between two laser pulses in time, the electron beam image at this time actually corresponds to the background noise light. The image, even if it is enhanced by the first-level microchannel plate, is still weak and will be blocked by the reverse voltage. Perhaps the electron beam image at this time is stronger and falls on the trigger signal bypass electrode of the microwell array grid, resulting in The current flows to the trigger circuit as a trigger signal; because before a specific detection project is carried out, according to the actual detection conditions of the target and the background, a current threshold is preset for the trigger circuit adjustment, which is determined by the electronic image corresponding to the background noise. The current generated by the beam image is less than the current threshold, the trigger circuit does not output the strobe signal, and the background noise light image is completely blocked; when the electron beam image emitted from the first-stage microchannel plate is in the laser pulse in time, although this time The electron beam image is still under the reverse voltage, and a part of the electrons constituting the electron beam image has a large kinetic energy, reaching the trigger signal bypass electrode and inputting the trigger current to the trigger circuit, and the trigger current is greater than the preset current threshold value, Therefore, the trigger circuit outputs a gating signal with the same duration as the laser pulse; after the pulse power supply receives the gating signal, it instantly converts the output reverse voltage into a forward voltage of 200-250V, so that the electron beam image at this time passes through the microelectronics normally. The hole array grid, which is amplified again by the secondary microchannel plate, is transmitted to the phosphor screen under the action of forward high voltage, and is restored to an optical image, which is coupled to the gated camera by the optical fiber cone. 2.根据权利要求1所述的自触发选通激光成像方法，其特征在于，选通摄像机的电子快门的常态为关闭，触发电路输出的选通信号一部分传送给控制电路，经过延时处理作为驱动信号输出给选通摄像机，驱动其电子快门开启，由选通摄像机摄取所述光学图像。2. self-triggered gating laser imaging method according to claim 1, is characterized in that, the normal state of the electronic shutter of gating camera is to close, and part of the gating signal output by trigger circuit is transmitted to control circuit, through delay processing as The driving signal is output to the gated camera to drive its electronic shutter to open, and the gated camera captures the optical image. 3.根据权利要求1所述的自触发选通激光成像方法，其特征在于，光电阴极与一级微通道板之间的电压V1为200V；一级微通道板、二级微通道板各自的两端电压V2、V3均为800～1000V；二级微通道板与荧光屏之间的电压V4为2000～4000V。3. The self-triggered gating laser imaging method according to claim 1 , wherein the voltage V between the photocathode and the first-level microchannel plate is 200V; the first-level microchannel plate and the second-level microchannel plate are respectively The voltages V 2 and V 3 at both ends of the two terminals are both 800-1000V; the voltage V 4 between the secondary microchannel plate and the phosphor screen is 2000-4000V.
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