CN110085753B - Non-fullerene perovskite solar cell and preparation method thereof - Google Patents
Non-fullerene perovskite solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a non-fullerene perovskite solar cell, which comprises a conductive substrate, a hole transmission layer, a light absorption layer, an interface passivation layer, a non-fullerene electron transmission layer, a hole blocking layer and a back electrode from bottom to top; the interface passivation layer is a silicon phthalocyanine layer. According to the invention, silicon phthalocyanine is used as an interface passivation layer material to construct the high-efficiency non-fullerene perovskite solar cell, so that the phenomenon of photocurrent delay is improved, the photoelectric conversion efficiency and stability are obviously improved, and a new thought is provided for constructing the low-cost, high-efficiency and stable non-fullerene perovskite solar cell.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cells, and particularly relates to a non-fullerene perovskite solar cell and a preparation method thereof.
Background
From the 90 s of the 20 th century, it is predicted that the problems of energy consumption and environmental pollution are increasing with the rapid growth of the global population and the continuous expansion of industrialization. In order to avoid the pollution problem caused by the shortage of traditional energy and the unreasonable use, people look to novel environment-friendly energy. The solar energy is inexhaustible. In addition to the fact that only two percent of energy is consumed in the past billion years, solar energy has the characteristics of being clean, stable and free of pollution, and the like, so that the solar energy becomes one of the most potential renewable resources in the 21 st century. The exploitation of solar energy is also abundant, among which solar cells based on the photovoltaic effect are the most common ones. Perovskite solar cells are the focus of research as a new generation of solar cells with high performance and high application value. The perovskite material has the advantages of solution preparation, low cost, excellent photoelectric property and the like. From 3.8% of the initial photoelectric conversion efficiency in 2009 to 23.7% of the currently approved efficiency, perovskite materials have been rapidly developed in the photovoltaic field. Although perovskite cells have achieved remarkable results in the development of high-efficiency solar cells, their operational stability is still largely insufficient compared to conventional crystalline silicon solar cells. Therefore, we have reason to believe that by continuously improving the stability of perovskite solar cells, it is possible to realize the possibility of large-scale commercial production in the field of new environmentally friendly energy.
The structure of the effective perovskite solar cell device is similar to a hamburger interlayer mode and comprises conductive glass, a hole transport layer, a perovskite light absorption layer, an electron transport layer and an interface modification layer, wherein each layer plays a decisive role in the performance of the perovskite solar cell. It has been found that fullerene and its derivatives are the most commonly used electron transport materials at present and achieve high conversion efficiency in the inverted structure (p-i-n) due to the high electron mobility, three-dimensional electron transport properties and effective lewis acid passivation effect of fullerene. However, as the manufacturing process is mature, the defects of fullerene on the perovskite solar cell become prominent, such as: the weak absorption capacity of the device can not provide effective photocurrent utilization for the device, the spherical molecular structure of the device can generate aggregation effect at high temperature, the energy level is inconvenient to adjust, the purification cost is high, and the photo-thermal water-oxygen stability is poor. In order to avoid these disadvantages, another electron transport material with high performance is being sought instead of fullerene and its derivatives. Therefore, the application of non-fullerene electron transport systems in perovskite solar cells is also one of hot directions. However, the perovskite battery system studied at present has lower working efficiency and stability than the traditional fullerene perovskite battery system. The reason is that: often, some incompletely coordinated dangling bonds are generated on the surface of the perovskite, and the existence of the dangling bonds becomes a recombination center capable of capturing free carriers, so that the performance of the device is deteriorated.
Disclosure of Invention
Aiming at the problems of low photoelectric conversion efficiency and poor stability of a non-fullerene perovskite solar cell in the prior art, the invention aims to provide the non-fullerene perovskite solar cell and the preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
a non-fullerene perovskite solar cell comprises a conductive substrate, a hole transport layer, a light absorption layer, an interface passivation layer, a non-fullerene electron transport layer, a hole blocking layer and a back electrode from bottom to top;
the interface passivation layer is a silicon phthalocyanine layer (SiPC), and the structural general formula of the silicon phthalocyanine is shown as a formula (1):
in the formula (1), R is one selected from the following substituent groups:
l is H or an alkyl group having 1 to 4C atoms.
Preferably, in the formula (1), R is
L is H or an alkyl group having 1 to 4C atoms; more preferably, L is H or methyl.
Preferably, the thickness of the interface passivation layer is 5 nm.
Preferably, the conductive substrate comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate.
Preferably, the hole transport layer is a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] layer (PTAA).
Preferably, the thickness of the hole transport layer is 8 nm.
Preferably, the light absorption layer is a lead iodide methylamine layer (CH)3NH3PbI3)。
Preferably, the light absorption layer has a thickness of 450 nm.
Preferably, the non-fullerene electron transport layer is a perylene tetracarboxylic anhydride layer (PTCDA), a perylene tetracarboxylic diimide layer (PTCDI), or a perfluorophthalocyanine copper layer (F16 PcCu).
Preferably, the thickness of the non-fullerene electron transport layer is 20 nm.
Preferably, the hole blocking layer is a 2,4, 6-tris [3- (diphenylphosphinyloxy) phenyl ] -1,3, 5-triazole layer (POT-2T).
Preferably, the thickness of the hole blocking layer is 10 nm.
Preferably, the back electrode is a Cu layer.
Preferably, the thickness of the back electrode is 80 nm.
The invention also provides a preparation method of the non-fullerene perovskite solar cell, which comprises the following steps:
(1) preparation of hole transport layer: forming a hole transport layer on the conductive substrate by using a spin coating method;
(2) preparation of light absorption layer: preparing a light absorption layer on the hole transport layer by adopting a two-step spin coating method;
(3) preparing an interface passivation layer: forming a silicon phthalocyanine layer on the light absorption layer by using a spin coating method;
(4) preparation of non-fullerene electron transport layer: thermally evaporating and depositing the non-fullerene electron transport layer on the silicon phthalocyanine layer by adopting a vacuum thermal evaporation method;
(5) preparation of a hole blocking layer: forming a hole blocking layer on the non-fullerene electron transport layer by adopting a spin coating method;
(6) preparing a back electrode: and (3) thermally evaporating and depositing a back electrode, namely the non-fullerene perovskite solar cell, by adopting a vacuum thermal evaporation method.
Preferably, the preparation method of the non-fullerene perovskite solar cell comprises the following steps:
(1) pretreatment of the conductive substrate: soaking a conductive substrate in a detergent for 24 hours, sequentially performing ultrasonic treatment on the conductive substrate for 10 to 15 minutes by using deionized water, acetone and isopropanol, rinsing the conductive substrate by using the deionized water, drying the conductive substrate by using nitrogen flow, and finally performing ultraviolet ozone treatment for 12 to 15 minutes;
(2) preparation of hole transport layer: spin-coating a hole transport layer on the surface of the conductive substrate, wherein the hole transport layer is made of PTAA (Polybutylece acrylate), the rotation speed during spin-coating is 6000rpm, the spin-coating time is 30s, and drying is carried out at 65 ℃;
(3) preparation of light absorption layer: preparation of CH on hole transport layer by two-step spin coating method3NH3PbI3Film, first, PbI2Spin coating the solution on the PTAA at 6000rpm for 35 s; then the CH is3NH3Spin coating of solution I on PbI2Reacting at 6000rpm for 35s at 100 deg.C for 1 hr to obtain CH3NH3PbI3A film;
(4) preparing an interface passivation layer: by spin coating on CH3NH3PbI3SiPC is formed on the film, the rotating speed is 6000rpm during spin coating, the spin coating time is 45s, and the film is dried at 80 ℃;
(5) preparation of non-fullerene electron transport layer: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5Under the conditions of Mpa and the evaporation rate of 0.3-0.5A/s, carrying out thermal evaporation and deposition on PTCDA, PTCDI or F16PcCu on SiPC;
(6) preparation of a hole blocking layer: forming a hole blocking layer on PTCDA, PTCDI or F16PcCu by adopting a spin coating method, wherein the hole blocking layer is POT-2T, the rotating speed during spin coating is 5000rpm, the spin coating time is 45s, and drying is carried out at 80 ℃;
(7) preparing a back electrode: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5And (3) under the conditions of Mpa and the evaporation rate of 1-3A/s, thermally evaporating and depositing a Cu electrode on the POT-2T to obtain the silicon phthalocyanine passivated non-fullerene perovskite solar cell.
Compared with the prior art, the invention has the advantages and beneficial effects that:
(1) compared with the most widely used fullerene electron transport layer material at present, the perylene derivative has an N-type organic semiconductor with high chemical stability, thermal stability and photostability, and has excellent electron mobility, and the stability of the perovskite solar cell is improved to a certain extent.
(2) The invention adopts silicon phthalocyanine (SiPC) as a perovskite interface passivation layer for the first time, the silicon phthalocyanine compound contains three elements of nitrogen, hydrogen and carbon, and has a conjugate of 18 pi electrons, and the bond length of nitrogen and carbon is almost equal, so the structure is stable. The structure contains a large amount of lone-pair electrons, so that the perovskite crystal boundary passivation material has a Lewis basic function and can passivate the perovskite crystal boundary. The SiPC interface passivation layer adopted in the invention is combined with the perylene derivative PTCDA or PTCDI electron transport layer to construct the non-fullerene perovskite solar cell, the performance of a cell device is mainly reflected in that the retardation phenomenon of photocurrent is greatly reduced, the open-circuit voltage of the device is improved, the photoelectric efficiency is remarkably improved from 16.2% to 19.2% and is higher than 18.5% of that of a fullerene-based device, and the efficiency refreshes the highest record in the field of the non-fullerene perovskite solar cell at present.
(3) In order to further verify the passivation effect of SiPC interface defects, the invention uses the perfluorinated copper phthalocyanine (F16PcCu) as an electron transport layer, finds that the hysteresis phenomenon of the device passivated by the SiPC is obviously improved, and simultaneously improves the filling factor and the open-circuit voltage, thereby improving the working efficiency. Through the design of a double electron transmission structure, a new thought is provided for the design and preparation of the high-performance non-fullerene-based perovskite solar cell.
(4) The non-fullerene electron transport layer and the silicon phthalocyanine interface passivation layer adopted by the invention have the advantages of low cost, commercialization and the like, so that the preparation cost of the whole preparation process is obviously reduced, and the preparation of the non-fullerene-based perovskite solar cell with low cost and high efficiency is realized. Meanwhile, compared with the perovskite battery without the SiPC passivation layer, the stability of the non-fullerene perovskite battery constructed after the SiPC passivation is obviously improved. Therefore, the double-layer structure replaces fullerene to be used as an electron transport layer, is suitable for preparing commercial large-area perovskite solar cells, and provides a new idea for realizing the preparation of low-cost, high-efficiency and stable non-fullerene-based perovskite solar cells.
Drawings
FIG. 1 is a schematic structural diagram of a non-fullerene perovskite solar cell according to the present invention;
the device comprises a conductive substrate 1, a hole transport layer 2, a light absorption layer 3, an interface passivation layer 4, a non-fullerene electron transport layer 5, a hole blocking layer 6, a back electrode 7 and a cathode;
FIG. 2 is a plot of the current-voltage characteristics (I-V) of the perovskite solar cells prepared in example 1 and comparative example 1 under forward-scan (from 0V test to 1.2V) and reverse-scan (from 1.2V test to 0V) test conditions;
FIG. 3 is a plot of the current-voltage characteristics (I-V) of the perovskite solar cells prepared in example 2 and comparative example 2 under forward-scan (from 0V test to 1.2V) and reverse-scan (from 1.2V test to 0V) test conditions;
FIG. 4 is a plot of the current-voltage characteristics (I-V) of the perovskite solar cells prepared in example 3 and comparative example 3 under forward-scan (from 0V test to 1.2V) and reverse-scan (from 1.2V test to 0V) test conditions;
FIG. 5 is a graph of the thermal stability of perovskite solar cells prepared in example 1 and comparative example 1, with continuous heating on a 90 ℃ hot stage;
FIG. 6 is a graph of the thermal stability of perovskite solar cells prepared in example 2 and comparative example 2, with continuous heating on a 90 ℃ hot stage;
fig. 7 is a graph of thermal stability of perovskite solar cells prepared in example 3 and comparative example 3, with continuous heating on a 90 ℃ hot stage as a test condition.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be noted that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention. In practice, the technical personnel according to the invention make improvements and modifications, which still belong to the protection scope of the invention.
The interface barrier layer material silicon phthalocyanine can be obtained through simple condensation reaction, and the specific synthesis steps are shown in a reaction equation (2): under the protection of nitrogen, diethylene glycol dimethyl ether is used as a reaction solvent, raw materials of dichlorosilicon phthalocyanine and benzoic acid or naphthoic acid or phenanthrene acid or pyrenyl acid are added into a reaction bottle according to the molar ratio of 1:3, then the reaction is heated to 160 ℃ and kept for 4-6 h, and whether the reaction is carried out or not is determined by a Thin Layer Chromatography (TLC) dot plate analysis method. And after the reaction is finished, spin-drying the solution by using a rotary evaporator, and purifying by using a column chromatography separation method to obtain silicon phthalocyanines modified by different axial substituent groups, namely phenyl-modified silicon phthalocyanines (marked as SiPC-Bz), naphthyl-phenyl-modified silicon phthalocyanines (marked as SiPC-Naph), phenanthryl-modified silicon phthalocyanines (marked as SiPC-Ph) and pyrenyl-modified silicon phthalocyanines (marked as SiPC-Py).
According to the synthesis route, a plurality of silicon phthalocyanines modified by different axial substituent groups can be synthesized, wherein R-COOH in the formula (2) and R is selected from one of the following substituent groups:
l is H or an alkyl group having 1 to 4C atoms.
Example 1
The silicon phthalocyanine employed in this example is a compound of formula (3):
(1) pretreatment of the conductive substrate: using conductive ITO with the specification of light transmittance of more than 85 percent and square value of less than 10 omega, 15mm x 15mm as a device substrate, soaking a conductive substrate in detergent for 24 hours, sequentially using deionized water, acetone and isopropanol to perform ultrasonic treatment in an ultrasonic cleaning machine for 10 minutes, then using the deionized water to rinse, then using nitrogen flow to dry, and after drying, using ultraviolet ozone to treat the conductive substrate for 12 minutes before use;
(2) preparation of hole transport layer: using a PTAA material as a hole transport layer, weighing 1.5mg of PTAA, dissolving the PTAA material in 10ml of chlorobenzene solvent, heating and dissolving for 8 hours on a 65 ℃ heating table, fully dissolving, then spin-coating on an ITO substrate subjected to ultraviolet treatment, wherein the rotation speed is 6000rpm during spin-coating, the time is 30s, and drying is carried out at 65 ℃;
(3) preparation of light absorption layer: configuring PbI2Solution, weighing PbI2The mass is 1.2g, the mixture is dissolved in 2ml of dimethylformamide solvent and is heated and dissolved for 10 hours on a heating table at the temperature of 65 ℃; configuration CH3NH3I solution, weighing CH3NH3The mass of I is 120mg, and the I is dissolved in 2ml of isopropanol solvent; the perovskite layer was prepared by a two-step spin-coating process: firstly, mixing PbI2Spin coating the solution on the PTAA at 6000rpm for 35 s; then the CH is3NH3Spin coating of solution I on PbI2The reaction is carried out, the rotating speed during the spin coating is 6000rpm, the spin coating time is 35s, and smooth and continuous CH is prepared after annealing for 1h at the temperature of 100 DEG C3NH3PbI3A film;
(4) preparing an interface passivation layer: the compound of formula (3) was weighed to give a mass of 12mg, dissolved in 2ml of chlorobenzene solvent, and after sufficient dissolution, spin-coated on CH3NH3PbI3On the film, the rotating speed is 6000rpm when spin coating is carried out, the spin coating time is 45s, and drying is carried out at the temperature of 80 ℃;
(5) preparation of PTCDA non-fullerene electron transport layer: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5The PTCDA is thermally evaporated and deposited on the SiPC under the conditions of Mpa and the evaporation rate of 0.5A/s;
(6) preparation of a hole blocking layer: weighing POT-2T with the mass of 10mg, dissolving in 10ml of chlorobenzene solvent, fully dissolving, then spin-coating on PTCDA at the rotation speed of 5000rpm for 45s, and drying at 80 ℃;
(7) preparing a back electrode: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5And (3) under the conditions of Mpa and the evaporation rate of 1-3A/s, thermally evaporating and depositing a Cu electrode on the POT-2T to obtain the silicon phthalocyanine passivated non-fullerene perovskite solar cell.
Example 2
The silicon phthalocyanine employed in this example is a compound of formula (4):
(1) pretreatment of the conductive substrate: using conductive ITO with the specification of light transmittance of more than 85 percent and square value of less than 10 omega and 15mm by 15mm as a device substrate, soaking a conductive substrate in detergent water for 24 hours, sequentially using deionized water, acetone and isopropanol to perform ultrasonic cleaning in an ultrasonic cleaning machine for 15 minutes, then using the deionized water to rinse, then using nitrogen flow to dry, and after drying, using ultraviolet ozone to treat the conductive substrate for 15 minutes before use;
(2) preparation of hole transport layer: using a PTAA material as a hole transport layer, weighing 1.5mg of PTAA, dissolving the PTAA material in 10ml of chlorobenzene solvent, heating and dissolving for 8 hours on a 65 ℃ heating table, fully dissolving, then spin-coating on an ITO substrate subjected to ultraviolet treatment, wherein the rotation speed is 6000rpm during spin-coating, the time is 30s, and drying is carried out at 65 ℃;
(3) preparation of light absorption layer: configuring PbI2Solution, weighing PbI2The mass is 1.2g, the mixture is dissolved in 2ml of dimethylformamide solvent and is heated and dissolved for 10 hours on a heating table at the temperature of 65 ℃; configuration CH3NH3I solution, weighing CH3NH3The mass of I is 120mg, and the I is dissolved in 2ml of isopropanol solvent; the perovskite layer was prepared by a two-step spin-coating process: firstly, mixing PbI2Spin coating the solution on the PTAA at 6000rpm for 35 s; then the CH is3NH3Spin coating of solution I on PbI2The reaction is carried out, the rotating speed during the spin coating is 6000rpm, the spin coating time is 35s, and smooth and continuous CH is prepared after annealing for 1h at the temperature of 100 DEG C3NH3PbI3A film;
(4) preparing an interface passivation layer: the compound of formula (4) was weighed to a mass of 10mg, dissolved in 2ml of chlorobenzene solvent, and after sufficient dissolution, spin-coated on CH3NH3PbI3On the film, the rotating speed is 6000rpm when spin coating is carried out, the spin coating time is 45s, and drying is carried out at the temperature of 80 ℃;
(5) preparation of PTCDI non-fullerene electron transport layer: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5Thermal evaporation and deposition of PTCDI on SiPC with a thickness of 20nm under the conditions of Mpa and an evaporation rate of 0.3A/s;
(6) preparation of a hole blocking layer: weighing POT-2T with the mass of 10mg, dissolving in 10ml of chlorobenzene solvent, fully dissolving, then spin-coating on PTCDA at the rotation speed of 5000rpm for 45s, and drying at 80 ℃;
(7) preparing a back electrode: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5Mpa, evaporation rate of 1-3A/s stripAnd under the condition, depositing a Cu electrode on the POT-2T by thermal evaporation to obtain the silicon phthalocyanine passivated non-fullerene perovskite solar cell.
Example 3
The silicon phthalocyanine employed in this example is a compound of formula (5):
(1) pretreatment of the conductive substrate: using conductive ITO with the specification of light transmittance of more than 85 percent and square value of less than 10 omega, 15mm x 15mm as a device substrate, soaking a conductive substrate in detergent for 24 hours, sequentially using deionized water, acetone and isopropanol to perform ultrasonic treatment in an ultrasonic cleaning machine for 10 minutes, then using the deionized water to rinse, then using nitrogen flow to dry, and after drying, using ultraviolet ozone to treat the conductive substrate for 12 minutes before use;
(2) preparation of hole transport layer: using a PTAA material as a hole transport layer, weighing 1.5mg of PTAA, dissolving the PTAA material in 10ml of chlorobenzene solvent, heating and dissolving for 8 hours on a 65 ℃ heating table, fully dissolving, then spin-coating on an ITO substrate subjected to ultraviolet treatment, wherein the rotation speed is 6000rpm during spin-coating, the time is 30s, and drying is carried out at 65 ℃;
(3) preparation of light absorption layer: configuring PbI2Solution, weighing PbI2The mass is 1.2g, the mixture is dissolved in 2ml of dimethylformamide solvent and is heated and dissolved for 10 hours on a heating table at the temperature of 65 ℃; configuration CH3NH3I solution, weighing CH3NH3The mass of I is 120mg, and the I is dissolved in 2ml of isopropanol solvent; the perovskite layer was prepared by a two-step spin-coating process: firstly, mixing PbI2Spin coating the solution on the PTAA at 6000rpm for 35 s; then the CH is3NH3Spin coating of solution I on PbI2The reaction is carried out, the rotating speed during the spin coating is 6000rpm, the spin coating time is 35s, and smooth and continuous CH is prepared after annealing for 1h at the temperature of 100 DEG C3NH3PbI3A film;
(4) preparing an interface passivation layer: the compound of formula (5) was weighed to give a mass of 12mg, dissolved in 2ml of chlorobenzene solvent, and after sufficient dissolution, spin-coated on CH3NH3PbI3On the film, the rotating speed is 6000rpm when spin coating is carried out, the spin coating time is 45s, and drying is carried out at the temperature of 80 ℃;
(5)F16preparation of PcCu non-fullerene electron transport layer: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10- 5Mpa, evaporation rate 0.5A/s, and16PcCu is deposited on SiPC through thermal evaporation;
(6) preparation of a hole blocking layer: POT-2T was weighed to have a mass of 10mg, dissolved in 10ml of chlorobenzene solvent, and after sufficient dissolution, spin-coated on F16Rotating speed of 5000rpm during spin coating on PcCu for 45s, and drying at 80 ℃;
(7) preparing a back electrode: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5And (3) under the conditions of Mpa and the evaporation rate of 1-3A/s, thermally evaporating and depositing a Cu electrode on the POT-2T to obtain the silicon phthalocyanine passivated non-fullerene perovskite solar cell.
Comparative example 1
The difference from example 1 is only that no SiPC interface passivation layer is provided.
Comparative example 2
The difference from example 2 is only that no SiPC interface passivation layer is provided.
Comparative example 3
The difference from example 3 is only that no SiPC interface passivation layer is provided.
Claims (10)
1. The utility model provides a non-fullerene perovskite solar cell, includes from supreme conductive substrate, hole transport layer, light absorption layer, non-fullerene electron transport layer, hole barrier layer and back electrode down, its characterized in that: the silicon phthalocyanine light absorption layer further comprises an interface passivation layer between the light absorption layer and the non-fullerene electron transmission layer, wherein the interface passivation layer is a silicon phthalocyanine layer, and the structural general formula of the silicon phthalocyanine is shown as formula (1):
in the formula (1), R is one selected from the following substituent groups:
l is H or an alkyl group having 1 to 4C atoms.
2. The non-fullerene perovskite solar cell according to claim 1, characterized in that: in the formula (1), R is
L is H or an alkyl group having 1 to 4C atoms.
3. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the conductive substrate comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate.
4. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the hole transport layer is a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] layer.
5. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the light absorption layer is a lead iodide methylamine layer.
6. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the non-fullerene electron transport layer is a perylene tetracarboxylic anhydride layer, a perylene tetracarboxylic diimide layer or a perfluorinated phthalocyanine copper layer.
7. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the hole blocking layer is a 2,4, 6-tri [3- (diphenylphosphine oxy) phenyl ] -1,3, 5-triazole layer.
8. The non-fullerene perovskite solar cell according to claim 1 or 2, characterized in that: the back electrode is a Cu layer.
9. The method of manufacturing a non-fullerene perovskite solar cell according to any one of claims 1 to 8, comprising the steps of:
(1) preparation of hole transport layer: forming a hole transport layer on the conductive substrate by using a spin coating method;
(2) preparation of light absorption layer: preparing a light absorption layer on the hole transport layer by adopting a two-step spin coating method;
(3) preparing an interface passivation layer: forming a silicon phthalocyanine layer on the light absorption layer by using a spin coating method;
(4) preparation of non-fullerene electron transport layer: thermally evaporating and depositing the non-fullerene electron transport layer on the silicon phthalocyanine layer by adopting a vacuum thermal evaporation method;
(5) preparation of a hole blocking layer: forming a hole blocking layer on the non-fullerene electron transport layer by adopting a spin coating method;
(6) preparing a back electrode: and (3) carrying out thermal evaporation deposition on the back electrode by adopting a vacuum thermal evaporation method to obtain the silicon phthalocyanine passivated non-fullerene perovskite solar cell.
10. The method of fabricating a non-fullerene perovskite solar cell of claim 9, comprising the steps of:
(1) pretreatment of the conductive substrate: soaking a conductive substrate in a detergent for 24 hours, sequentially performing ultrasonic treatment on the conductive substrate for 10 to 15 minutes by using deionized water, acetone and isopropanol, rinsing the conductive substrate by using the deionized water, drying the conductive substrate by using nitrogen flow, and finally performing ultraviolet ozone treatment for 12 to 15 minutes;
(2) preparation of hole transport layer: spin-coating a hole transport layer on the surface of a conductive substrate, wherein the hole transport layer is made of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ], the rotation speed during spin-coating is 6000rpm, the spin-coating time is 30s, and drying is carried out at 65 ℃;
(3) preparation of light absorption layer: preparing a lead iodide methylamine layer on a hole transport layer by adopting a two-step spin coating method, and firstly, mixing PbI2Spin coating of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine]Rotating speed is 6000rpm during spin coating, and spin coating time is 35 s; then the CH is3NH3Spin coating of solution I on PbI2Reacting the mixture, wherein the rotating speed during spin coating is 6000rpm, the spin coating time is 35s, and annealing at 100 ℃ for 1h to prepare an iodolead methylamine layer;
(4) preparing an interface passivation layer: forming a silicon phthalocyanine layer on the lead iodide methylamine layer by adopting a spin coating method, wherein the rotation speed during spin coating is 6000rpm, the spin coating time is 45s, and drying is carried out at 80 ℃;
(5) preparation of non-fullerene electron transport layer: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5Under the conditions of Mpa and the evaporation rate of 0.3-0.5A/s, perylene tetracarboxylic anhydride, perylene tetracarboxydiimide or perfluoro copper phthalocyanine is thermally evaporated and deposited on the silicon phthalocyanine layer;
(6) preparation of a hole blocking layer: forming a hole blocking layer on the perylene tetracarboxylic anhydride layer, the perylene tetracarboxylic diimide layer or the perfluoro phthalocyanine copper layer by adopting a spin coating method, wherein the hole blocking layer is a 2,4, 6-tris [3- (diphenylphosphine oxy) phenyl ] -1,3, 5-triazole layer, the rotation speed is 5000rpm during spin coating, the spin coating time is 45s, and drying is carried out at 80 ℃;
(7) preparing a back electrode: vacuum thermal evaporation is adopted, and the vacuum degree is less than 10-5Mpa, the evaporation rate is 1-3A/s, and the Cu electrode is deposited on the 2,4, 6-tri [3- (diphenylphosphine oxy) phenyl group by thermal evaporation]And (4) obtaining the silicon phthalocyanine passivated non-fullerene perovskite solar cell on the-1, 3, 5-triazole layer.
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