CN110085750B - Organic light emitting diode device and manufacturing method thereof - Google Patents
Organic light emitting diode device and manufacturing method thereof Download PDFInfo
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- CN110085750B CN110085750B CN201910280574.1A CN201910280574A CN110085750B CN 110085750 B CN110085750 B CN 110085750B CN 201910280574 A CN201910280574 A CN 201910280574A CN 110085750 B CN110085750 B CN 110085750B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention provides an organic light-emitting diode device and a manufacturing method thereof. The organic light-emitting diode device comprises a glass substrate, a glass cover plate and a sealing adhesive layer, wherein the upper surface of the glass substrate sequentially comprises an array substrate layer, an electroluminescent layer and a first thin film packaging layer; the lower surface of the glass cover plate sequentially comprises a color filter, a quantum light emitting layer, an optical modulation layer and a light isolation layer; the light isolation layer is arranged opposite to the black light resistance layer of the color filter and used for blocking light rays emitted by the electroluminescent layer to prevent light leakage. The manufacturing method of the organic light emitting diode device comprises the following steps: manufacturing a glass substrate, manufacturing a glass cover plate and packaging into a box. The invention solves the problems of device light leakage and the like caused by box thickness by reducing the box distance between the glass substrate and the glass cover plate and setting the light isolation layer to block light.
Description
Technical Field
The invention relates to the field of display, in particular to an organic light-emitting diode device and a manufacturing method thereof.
Background
Organic Light Emitting Diode (OLED) devices are also called Organic electroluminescent displays and Organic Light Emitting semiconductors. Since the display device has the characteristics of self-luminescence, infinite high contrast ratio, wide viewing angle, low power consumption, extremely high response speed, flexible display and the like, the display device is considered as a new generation of display technology since the discovery.
The QD-OLED has the characteristics of brightness and brilliance of quantum dots, autonomous luminescence and ultrathin design of the OLED and the like, is in the research and development stage in the industry at present, and has an opportunity to show a new way when being applied to the display terminal market in the future. The QD-OLED is more like a combination of quantum dots and an OLED, a blue OLED is used as a light source, a quantum dot QD film is placed on the upper layer, corresponding blue pixels can directly transmit blue light, and red and green pixels are actually red and green quantum dots, and can excite red light and green light after receiving the blue light. Thereby realizing full color.
The QD-OLED screen device consists of a glass substrate and a glass cover plate, wherein a thin film transistor layer and an OLED blue light emitting layer are formed on the glass substrate, and device layers such as a color filter, a quantum red light emitting layer and a quantum green light emitting layer are formed on the glass cover plate; the glass substrate and the glass cover plate need to be accurately aligned, attached and packaged, the effective pixels of the quantum light emitting layers meet the backlight requirement, and due to the fact that box distances exist between the glass substrate and the glass cover plate, the light leakage problem easily occurs to adjacent pixels in the QD-OLED screen working process.
Disclosure of Invention
The invention aims to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the problems of device light leakage and the like caused by box thickness by reducing the box distance between a glass substrate and a glass cover plate and setting a light isolation layer to block light.
In order to solve the above problem, an embodiment of the present invention provides an organic light emitting diode device, which includes a glass substrate, a glass cover plate disposed opposite to the glass substrate, and a sealant layer. An array substrate layer, an electroluminescent layer and a first thin film packaging layer are sequentially stacked on the upper surface of the glass substrate; the glass cover plate is arranged opposite to the glass substrate, and a color filter, a quantum light emitting layer, an optical modulation layer and a light isolation layer are sequentially stacked on the lower surface of the glass cover plate; the sealing glue layers are positioned between the glass substrate and the glass cover plate, distributed around the glass substrate and the glass cover plate and used for connecting and sealing the glass substrate and the glass cover plate; the color filter comprises a black light resistance layer, a red-green color filter layer and a first planarization layer; the light isolation layer is arranged opposite to the black light resistance layer and used for blocking light rays emitted by the electroluminescent layer to prevent light leakage.
Further, the organic light emitting diode device further comprises a filling layer located on the inner side of the sealant layer and used for filling and connecting the glass substrate and the glass cover plate.
Further, the quantum light emitting layer sequentially comprises a black matrix layer, a red-green quantum dot film layer and a second planarization layer from bottom to top; the light isolation layer is arranged opposite to the black matrix layer; the electroluminescent layer sequentially comprises a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer and a cathode layer from bottom to top.
Further, a drying agent layer is arranged between the sealant layer and the filling layer.
Furthermore, a second light adjusting layer and a second thin film packaging layer are further arranged between the color filter and the quantum light emitting layer.
In another embodiment of the present invention, a method for manufacturing an organic light emitting diode is provided, including the steps of:
the manufacturing method comprises the steps of manufacturing a glass substrate, wherein an array substrate layer, an electroluminescent layer and a first thin film packaging layer are sequentially manufactured on the upper surface of the glass substrate;
the manufacturing method comprises the steps of manufacturing a glass cover plate, wherein a color filter, a quantum light emitting layer, an optical modulation layer and a light isolation layer are sequentially manufactured on the lower surface of the glass cover plate; the thickness of the color filter is less than 3.5 um; the thickness of the quantum light emitting layer is less than 10 um;
a step of packaging into a box, wherein a filling layer is filled between the glass substrate and the glass cover plate, and the first thin film packaging layer and the filling layer are oppositely arranged, so that the glass substrate and the glass cover plate are connected through the filling layer; and sealing and connecting the peripheries of the glass substrate and the glass cover plate by using a sealing adhesive layer, wherein the sealing adhesive layer is positioned at the outer side of the filling layer.
Further, the step of manufacturing the glass substrate structure specifically comprises:
manufacturing an array substrate layer, namely providing a glass substrate, and forming the array substrate layer on the glass substrate layer by layer through sputtering film forming, organic chemical film forming, exposure, development and etching processes;
manufacturing an electroluminescent layer, namely manufacturing a hole injection layer, a hole transport layer, an organic luminescent layer, an electron transport layer, an electron injection layer and a cathode layer as the electroluminescent layer on the array substrate layer in sequence from bottom to top by adopting a mask evaporation process; the thickness range of the electroluminescent layer is 400-600 nm; the cathode layer is a top emission cathode made of any one of ITO, IZO, Mg or Ag;
and a step of manufacturing a first thin film packaging layer, which is to manufacture the first thin film packaging layer by adopting chemical vapor deposition, wherein the first thin film packaging layer is a SiO \ SiOC \ SiON single-layer or multi-layer film combination, and the thickness range of the first thin film packaging layer is 500-800 nm.
Further, the step of manufacturing the glass cover plate specifically includes: the lower surface of glass apron makes black light resistance layer, red green color filter layer and first planarization layer in proper order, black light resistance layer red green color filter layer with first planarization layer constitutes color filter, color filter's thickness is less than 3.5 um.
Further, the step of manufacturing the glass cover plate further comprises the step of manufacturing a second light adjusting layer and a second thin film packaging layer, wherein the second light adjusting layer and the second thin film packaging layer are manufactured between the color filter and the quantum light emitting layer.
Further, the step of packaging into a box also comprises a step of manufacturing a desiccant layer, wherein a desiccant is arranged between the sealant layer and the filling layer and is used as the desiccant layer, and the desiccant layer is arranged opposite to the sealant layer.
The organic light emitting diode device and the manufacturing method thereof have the advantages that the problems of device light leakage and the like caused by the box thickness can be solved by reducing the box distance between the glass substrate and the glass cover plate and setting the light isolation layer to block light.
Drawings
Fig. 1 is a schematic structural diagram of an organic light emitting diode device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of the electroluminescent layer of FIG. 1;
FIG. 3 is a schematic structural diagram of an OLED device according to another embodiment of the present invention;
fig. 4 is a flow chart illustrating a manufacturing process of an organic light emitting diode device according to an embodiment of the invention;
FIG. 5 is a flow chart illustrating the steps of fabricating the glass substrate shown in FIG. 4;
fig. 6 is a flow chart illustrating a manufacturing process of an organic light emitting diode device according to an embodiment of the invention, wherein a step of manufacturing a second light adjusting layer and a second thin film encapsulation layer is added to the manufacturing process shown in fig. 4;
fig. 7 is a flow chart illustrating a manufacturing process of an organic light emitting diode device according to an embodiment of the invention, wherein a step of manufacturing a desiccant layer is added to the manufacturing process shown in fig. 6.
The components in the figure are identified as follows:
1 an organic light emitting diode device;
10 glass substrates, 20 glass cover plates and 30 sealing glue layers;
11 array substrate layers, 12 electroluminescent layers and 13 first thin film packaging layers;
21 color filter, 22 quantum luminescent layer, 23 optical modulation layer, 24 optical isolation layer,
25 filling layer, 26 second light adjusting layer, 27 second thin film packaging layer and 31 drying agent layer;
121 a hole injection layer, 122 a hole transport layer, 123 an organic light emitting layer,
124 electron transport layer, 125 electron injection layer, 126 cathode layer;
211 a black photoresist layer, 212 a red-green-color filter layer, 213 a first planarization layer;
221 black matrix layer, 222 red green quantum dot film layer, 223 second planarization layer.
Detailed Description
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the present invention, the same or corresponding components are denoted by the same reference numerals regardless of the figure numbers, and when the terms "first", "second", etc. may be used to describe various components throughout the specification, the components are not necessarily limited to the above terms. The above wording is only used to distinguish one component from another component.
Referring to fig. 1, an embodiment of the invention provides an organic light emitting diode device 1, which includes a glass substrate 10, a glass cover plate 20 disposed opposite to the glass substrate 10, and a sealant layer 30, where the sealant layer 30 is disposed between the glass substrate 10 and the glass cover plate 20 and distributed around the glass substrate 10 and the glass cover plate 20 for connecting and sealing the glass substrate 10 and the glass cover plate 20. An array substrate layer 11, an electroluminescent layer 12 and a first thin film encapsulation layer 13 are sequentially stacked on the upper surface of the glass substrate 10; the color filter 21, the quantum light emitting layer 22, the optical modulation layer 23 and the light isolation layer 24 are sequentially stacked on the lower surface of the glass cover plate 20. The organic light emitting diode device 1 further includes a filling layer 25, wherein the filling layer 25 is located on the inner side of the sealant layer 30 and is used for filling and connecting the glass substrate 10 and the glass cover plate 20, and particularly for filling a gap between the glass substrate 10 and the glass cover plate 20. The color filter 21 comprises a black photoresist layer 211, a red-green color filter layer 212 and a first planarization layer 213; the light isolation layer 24 is disposed opposite to the black photoresist layer 211, and is used for blocking light emitted from the electroluminescent layer 12 to prevent light leakage. Wherein the sealant layer 30 is preferably a UV sealant layer.
Further, the quantum light emitting layer 22 comprises a black matrix layer 221, a red and green quantum dot film layer 222 and a second planarization layer 223; the light isolation layer 24 is disposed opposite the black matrix layer.
Further, the array substrate layer 11 includes, from bottom to top, a thin film transistor layer, a pixel defining layer, and an anode layer in sequence. This structure is the prior art and will not be described herein.
Referring to fig. 2, the electroluminescent layer 12 includes, from bottom to top, a hole injection layer 121, a hole transport layer 122, an organic light-emitting layer 123, an electron transport layer 124, an electron injection layer 125, and a cathode layer 126.
Further, a drying agent layer 31 is further included between the sealant layer 30 and the filling layer 25.
Referring to fig. 3, a second light adjusting layer 26 and a second thin film encapsulation layer 27 are further included between the color filter 21 and the quantum light emitting layer 22.
Referring to fig. 4, in an embodiment, a method for fabricating an organic light emitting diode includes steps S1-S3.
Step S1 of manufacturing a glass substrate 10, specifically, providing a glass substrate 10, and sequentially manufacturing an array substrate layer 11, an electroluminescent layer 12, and a first thin film encapsulation layer 13 on an upper surface of the glass substrate 10 from bottom to top.
Step S2 of manufacturing a glass cover plate 20, specifically, providing a glass cover plate 20, and sequentially manufacturing a color filter 21, a quantum light emitting layer 22, an optical modulation layer 23, and a light isolation layer 24 on the glass cover plate 20 from bottom to top; the thickness of the color filter 21 is less than 3.5 um; the thickness of the quantum light emitting layer 22 is less than 10 um.
And a step S3 of packaging into a box, specifically, the glass substrate 10 and the glass cover plate 20 are filled and connected by the filling layer 25, and the sealing glue layer 30 is used for sealing and connecting the opposite periphery of the glass substrate 10 and the glass cover plate 20. Wherein the first thin film encapsulation layer 13 and the filling layer 25 are oppositely arranged, and the sealant layer 30 is located at the outer side of the filling layer 25.
Referring to fig. 5, the step S1 of manufacturing the glass substrate includes:
step S11 of manufacturing an array substrate layer, specifically, providing a glass substrate 10, forming an array substrate layer 11 on an upper surface of the glass substrate 10 layer by layer through sputtering film formation, organic chemical film formation, exposure, development and etching processes, where the array substrate layer 11 sequentially includes a thin film transistor layer, a pixel defining layer and an anode layer from bottom to top;
step S12, manufacturing an electroluminescent layer, specifically, manufacturing a hole injection layer 121, a hole transport layer 122, an organic light emitting layer 123, an electron transport layer 124, an electron injection layer 125, and a cathode layer 126 as the electroluminescent layer 12 on the array substrate layer 11 in sequence from bottom to top by using a MASK evaporation process (Open MASK); the thickness of the electroluminescent layer 12 is in the range of 400-600 nm; the cathode layer 126 is a top emission cathode made of any one of ITO, IZO, Mg, or Ag; the electroluminescent layer 12 can also be manufactured by adopting an ink-jet printing and mask plate evaporation manner, and the electroluminescent layer 12 adopts a B \ BB \ BBB single-layer or series multi-layer structure;
step S13 of fabricating the first thin film encapsulation layer 13, specifically, the first thin film encapsulation layer 13 is fabricated by using a chemical Vapor Deposition (PECVD), where the first thin film encapsulation layer 13 is a SiO \ SiOC \ SiON single layer or multilayer film combination, and the thickness range of the first thin film encapsulation layer 13 is 500-800nm, so as to ensure that the electroluminescent layer 12 is not invaded by water oxygen.
In this embodiment, the step of manufacturing the color filter 21 specifically includes: a black light resistance layer, a red-green color filter layer and a first planarization layer are sequentially manufactured on the glass cover plate 20 from bottom to top, and the black light resistance layer, the red-green color filter layer and the first planarization layer form a color filter 21.
In this embodiment, the steps of manufacturing the quantum light emitting layer 22 specifically include: a black matrix layer 221, a red and green quantum dot film layer 222 and a second planarization layer 223 are sequentially formed on the lower surface of the color filter 21, and the black matrix layer, the red and green quantum dot film layer and the second planarization layer form a quantum light emitting layer 22.
Referring to fig. 6, in the present embodiment, the step S2 of manufacturing the glass cover plate 20 further includes a step S21 of manufacturing a second light-adjusting layer 26 and a second thin-film encapsulation layer 27, specifically, the second light-adjusting layer 26 and the second thin-film encapsulation layer 27 are manufactured between the color filter 21 and the quantum light-emitting layer 22.
Referring to fig. 7, the step S3 of packaging into a box further includes a step S31 of fabricating a desiccant layer, specifically, a desiccant is disposed between the sealant layer 30 and the filling layer 25 as a desiccant layer 31, and the desiccant layer 31 is disposed opposite to the sealant layer 30. The desiccant is preferably a Getter desiccant.
The organic light emitting diode device and the manufacturing method thereof have the advantages that the problems of device light leakage and the like caused by the box thickness can be solved by reducing the box distance between the glass substrate and the glass cover plate and setting the light isolation layer to block light.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. An organic light emitting diode device, comprising
The electroluminescent device comprises a glass substrate, wherein an array substrate layer, an electroluminescent layer and a first thin film packaging layer are sequentially stacked on the upper surface of the glass substrate;
the glass cover plate is arranged opposite to the glass substrate, and a color filter, a quantum light emitting layer, an optical modulation layer and a light isolation layer are sequentially stacked on the lower surface of the glass cover plate; and
the sealing glue layer is positioned between the glass substrate and the glass cover plate and positioned around the glass substrate and the glass cover plate and used for connecting and sealing the glass substrate and the glass cover plate;
the color filter comprises a black light resistance layer, a red-green color filter layer and a first planarization layer;
the light isolation layer is arranged opposite to the black light resistance layer and used for blocking light rays emitted by the electroluminescent layer to prevent light leakage;
and a second light adjusting layer and a second thin film packaging layer are also arranged between the color filter and the quantum light emitting layer.
2. The device of claim 1, further comprising a filling layer located inside the sealant layer for filling and connecting the glass substrate and the glass cover plate.
3. The organic light-emitting diode device according to claim 1, wherein the quantum light-emitting layer comprises a black matrix layer and a red-green quantum dot film layer which are arranged in the same layer, and a second planarization layer which is positioned on the upper side of the black matrix layer and the red-green quantum dot film layer; the light isolation layer is arranged opposite to the black matrix layer;
the electroluminescent layer sequentially comprises a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer and a cathode layer from bottom to top.
4. The organic light emitting diode device of claim 2, further comprising a desiccant layer between the sealant layer and the fill layer.
5. A method of manufacturing an organic light emitting diode device according to any of claims 1 to 4, comprising the steps of:
the manufacturing method comprises the steps of manufacturing a glass substrate, wherein an array substrate layer, an electroluminescent layer and a first thin film packaging layer are sequentially manufactured on the upper surface of the glass substrate;
the manufacturing method comprises the steps of manufacturing a glass cover plate, wherein a color filter, a quantum light emitting layer, an optical modulation layer and a light isolation layer are sequentially manufactured on the lower surface of the glass cover plate; the thickness of the color filter is less than 3.5 um; the thickness of the quantum light emitting layer is less than 10 um; the step of manufacturing the glass cover plate further comprises the step of manufacturing a second light adjusting layer and a second thin film packaging layer, wherein the second light adjusting layer and the second thin film packaging layer are manufactured between the color filter and the quantum light emitting layer;
a step of packaging into a box, wherein a filling layer is filled between the glass substrate and the glass cover plate, and the first thin film packaging layer and the filling layer are oppositely arranged, so that the glass substrate and the glass cover plate are connected through the filling layer; and sealing and connecting the peripheries of the glass substrate and the glass cover plate by using a sealing adhesive layer, wherein the sealing adhesive layer is positioned at the outer side of the filling layer.
6. The method according to claim 5, wherein the step of fabricating the glass substrate structure specifically comprises:
manufacturing an array substrate layer, namely providing a glass substrate, and forming the array substrate layer on the glass substrate layer by layer through sputtering film forming, organic chemical film forming, exposure, development and etching processes;
manufacturing an electroluminescent layer, namely manufacturing a hole injection layer, a hole transport layer, an organic luminescent layer, an electron transport layer, an electron injection layer and a cathode layer as the electroluminescent layer on the array substrate layer in sequence from bottom to top by adopting a mask evaporation process; the thickness range of the electroluminescent layer is 400-600 nm; the cathode layer is a top emission cathode made of any one of ITO, IZO, Mg or Ag;
and a step of manufacturing a first thin film packaging layer, which is to manufacture the first thin film packaging layer by adopting chemical vapor deposition, wherein the first thin film packaging layer is a SiO \ SiOC \ SiON single-layer or multi-layer film combination, and the thickness range of the first thin film packaging layer is 500-800 nm.
7. The method of claim 5, wherein the step of fabricating the color filter comprises: sequentially manufacturing a black light resistance layer and a red-green color filter layer which are arranged in the same layer and a first planarization layer which is positioned on the upper sides of the black light resistance layer and the red-green color filter layer on the lower surface of the glass cover plate, wherein the black light resistance layer, the red-green color filter layer and the first planarization layer form the color filter, and the thickness of the color filter is smaller than 3.5 um;
the specific steps for manufacturing the quantum light-emitting layer are as follows: and a black matrix layer, a red and green quantum dot film layer and a second planarization layer are sequentially manufactured on the lower surface of the color filter, wherein the black matrix layer and the red and green quantum dot film layer are arranged on the same layer, and the second planarization layer is positioned on the upper sides of the black matrix layer and the red and green quantum dot film layer, and the black matrix layer, the red and green quantum dot film layer and the second planarization layer form the quantum light emitting layer.
8. The method of claim 5, wherein the step of packaging into a box further comprises
And a step of manufacturing a desiccant layer, wherein a desiccant is arranged between the sealing adhesive layer and the filling layer to serve as the desiccant layer, and the desiccant layer is arranged opposite to the sealing adhesive layer.
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| CN201910280574.1A CN110085750B (en) | 2019-04-09 | 2019-04-09 | Organic light emitting diode device and manufacturing method thereof |
| PCT/CN2019/085532 WO2020206773A1 (en) | 2019-04-09 | 2019-05-05 | Organic light emitting diode device and manufacturing method therefor |
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| CN201910280574.1A CN110085750B (en) | 2019-04-09 | 2019-04-09 | Organic light emitting diode device and manufacturing method thereof |
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| CN110444689B (en) * | 2019-08-19 | 2021-11-16 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111883682A (en) * | 2019-08-28 | 2020-11-03 | 广东聚华印刷显示技术有限公司 | Light emitting device and method of manufacturing the same |
| CN111162108A (en) * | 2020-01-02 | 2020-05-15 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN111863884A (en) * | 2020-07-01 | 2020-10-30 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, preparation method thereof and display panel |
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| TWI574055B (en) * | 2013-08-14 | 2017-03-11 | 鴻海精密工業股份有限公司 | Display panel |
| CN104617234A (en) * | 2015-02-13 | 2015-05-13 | 京东方科技集团股份有限公司 | Spacer, organic light emitting display panel, manufacturing method and display device |
| CN105118928B (en) * | 2015-07-29 | 2018-02-09 | 京东方科技集团股份有限公司 | Color membrane substrates, its preparation method, OLED display panel and display device |
| CN113675353A (en) * | 2017-05-18 | 2021-11-19 | 京东方科技集团股份有限公司 | Color film substrate, manufacturing method thereof and display panel |
| KR102440471B1 (en) * | 2017-07-20 | 2022-09-07 | 삼성디스플레이 주식회사 | Display apparatus and manufacturimg method thereof |
| CN107331692B (en) * | 2017-08-25 | 2019-09-17 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN107887526B (en) * | 2017-10-31 | 2019-11-05 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device |
| CN108267885A (en) * | 2018-02-11 | 2018-07-10 | 京东方科技集团股份有限公司 | display panel and preparation method thereof and display device |
| CN108919560B (en) * | 2018-06-25 | 2021-04-27 | 福州大学 | Quantum dot color film backlight structure |
| CN108922906A (en) * | 2018-07-20 | 2018-11-30 | 深圳市华星光电半导体显示技术有限公司 | OLED display |
| CN109524442B (en) * | 2018-11-29 | 2020-06-19 | 京东方科技集团股份有限公司 | Organic light emitting diode display substrate, preparation method thereof and display device |
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