CN110085733A - Method for enhancing spin thermoelectric potential in annular quantum dot structure - Google Patents
Method for enhancing spin thermoelectric potential in annular quantum dot structure Download PDFInfo
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- CN110085733A CN110085733A CN201910343318.2A CN201910343318A CN110085733A CN 110085733 A CN110085733 A CN 110085733A CN 201910343318 A CN201910343318 A CN 201910343318A CN 110085733 A CN110085733 A CN 110085733A
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- 238000005485 electric heating Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Abstract
The invention discloses a method for enhancing self-spinning thermoelectric potential in an annular quantum dot structure, which comprises the steps of coupling three semiconductor quantum dots into an annular structure, applying thermal radiation to electrodes on two sides connected with the quantum dots, and enabling the annular quantum dot structure to have a temperature gradient; if a magnetic field is applied to a tunnel junction connected with the quantum dots, the coupling strength between the quantum dots can be related to the spin degree of freedom, so that when electrons in different spin directions flow through the quantum dot structure, different interference effects can occur, and the peaks of spin-up thermoelectric force and spin-down thermoelectric force are separated in the quantum dot energy space, so that pure thermoelectric force is obtained; by adjusting the structural parameters, the spin thermoelectric potential of the annular quantum dot structure can be further enhanced, and a foundation is provided for designing rapid response, high efficiency, low energy consumption and sensitive temperature detection; is superior to the traditional charge thermoelectric potential, breaks through the limitation of low thermoelectric efficiency, and is suitable for the field of spin filter devices or thermoelectric conversion.
Description
Technical field
The present invention relates to a kind of spin thermoelectrical potential Enhancement Method, spin heat in especially a kind of annular quantum-dot structure of enhancing
The method of potential.
Background technique
Before more than 30 years, the research topic of spintronics starts to rise, and is conceived in ferromagnetic material, with grid electricity
The spin that electronics is controlled with the help of pressure and spin, in fact, being ground with the development in this field
Study carefully the interaction being dedicated between heat and spin current, results in the appearance of spin Seebeck effect (spin pyroelectric effect), it should
How field primary study by temperature gradient generates spin current (or from spinning), by the way that spin current is converted to charge current,
The thermal energy in insulator is allowed to be converted to the electric energy in adjacent conductor, and the Main Task of pyroelectric effect is control nano-device
The movement of the heat of middle generation and basic carrier, the conversion efficiency of thermoelectric in low-dimensional system can be generated by quantum limitation effect
The typical shape density of states, inhibit interface phonon thermal conductivity rate and strong and adjustable electronics between Coulomb interactions and enhance, this
It is entirely different with the situation in agglomerate body material, because the thermal conductivity of electronics and electrical conductivity ratio are all in all systems at this time
Constant, therefore thermoelectrical efficiency and thermoelectrical potential are all difficult to improve, and in low-dimensional system, due to quantum limitation effect, heat to electricity conversion
The value of efficiency and thermoelectrical potential can all significantly improve, and common thermoelectrical potential (thermopower) refers to when there is temperature at the both ends of device
When degree difference, the voltage generated under conditions of open circuit, or the electric current generated under the conditions of closed circuit, also referred to as charge electromotive force are
A physical quantity in pyroelectric effect, the essence of charge thermoelectrical potential are to show that the temperature difference at device both ends can make electronics be in difference
Fermi level；In recent years, researcher's discovery is including in ferromagnetic multiple material, and temperature difference can also make different spin sides
To electronics be in different fermi levels, that is, generate spin thermoelectrical potential, with spin upward with spin charge thermoelectrical potential downward
Difference indicates that this effect in terms of designing quick response, high-efficiency low energy consumption, smart temperature detection before having a wide range of applications
Scape remains unchanged very little in the thermoelectrical efficiency for the Seebeck effect that at this stage, spins, and is worth, pole weaker compared to common charge thermoelectrical potential
The earth limits its application.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of enhancing annular quantum dot knot effective, stability is strong
The method for the thermoelectrical potential that spins in structure.
The technical solution adopted by the present invention to solve the technical problems is:
A method of enhancing the thermoelectrical potential that spins in annular quantum-dot structure, the step of this method is as follows:
(1), three or three or more semiconductor-quantum-points are circularized into quantum-dot structure by tunnel knot coupling；
(2), it is limited by the space that cathodic probe carries out tri- directions X, Y and Z to annular quantum-dot structure；
(3), the left electrode and right electrode being connected with external circuit are installed in the two sides of annular quantum-dot structure, then on a left side
Electrode and right electrode apply heat radiation, and enabling has temperature difference between left electrode and right electrode；
(4), electronics is injected toward annular quantum-dot structure, allows spin upward with the electronics directed downwardly that spins in annular quantum dot knot
It separates, and turn left respectively electrode and the movement of right electrode direction, allows under the influence of the spin correlation coupling of structure and thermal potential difference
The spin thermoelectrical potential of annular quantum-dot structure further enhances.
The semiconductor-quantum-point particle size range of the step 1 is 2nm~1 μm.
The thermal potential difference value range of the step 3 is 5K~18K.
The beneficial effects of the present invention are: the present invention can allow the spin thermoelectrical potential of annular quantum-dot structure to further enhance, make
Derived from rotation thermoelectrical potential under the feature for having quick response, high-efficiency low energy consumption and smart temperature detection, better than traditional charge heat
Potential breaches the low limitation of thermoelectrical efficiency, and is suitable for spin filtering device or heat to electricity conversion field.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is model structure schematic diagram of the invention；
Fig. 2 is the variation relation figure of charge and spin thermoelectrical potential with quantum dot energy level；
Fig. 3 is the spin thermoelectrical potential variation relation figure of coulomb difference interaction value in quantum dot.
Specific embodiment
Referring to Fig.1, a method of enhancing the thermoelectrical potential that spins in annular quantum-dot structure, the step of this method is as follows:
(1), three or three or more semiconductor-quantum-points are circularized into quantum-dot structure by tunnel knot coupling, at this
Annular quantum-dot structure is made of three semiconductor-quantum-point couplings in embodiment；
(2), electrostatic field is applied by cathodic probe, the space for carrying out tri- directions X, Y and Z to annular quantum-dot structure limits
System；
(3), the left electrode and right electrode being connected with external circuit are installed in the two sides of annular quantum-dot structure, are then used
Electric heating tube applies heat radiation to left electrode zone, and enabling has thermal potential difference between left electrode and right electrode, and thermal potential difference is controlled
Within the scope of 5K~18K, so that spin thermoelectrical potential reinforcing effect reaches the power consumption for reducing electric heating tube in optimal situation；
(4), electron stream is injected toward annular quantum-dot structure by transmitting scanning electron microscope (model SU8200), allowed
Spin is coupled with the electronics directed downwardly of spinning in the spin correlation of annular quantum-dot structure upward and thermal potential difference under the influence of occurs
Separation, and turn left respectively electrode and the movement of right electrode direction, allow the spin thermoelectrical potential of annular quantum-dot structure to further enhance.
The semiconductor-quantum-point particle size range of the step 1 is 2nm~1 μm, can allow annular quantum-dot structure more accurately
Filter the mobile electron of different spin directions.
A kind of formula model calculation process for the method enhancing the thermoelectrical potential that spins in annular quantum-dot structure is as follows:
(1), according to the composition and configuration of annular quantum-dot structure, the Hamiltonian of its energy is described:
WhereinIt is with energy ε in momentum k, spin σ (σ=↑, ↓) and α (α=L, R) a conducting wirekασElectronics
Generate (burying in oblivion) operator.It is to spin as σ, energy εjQuantum dot in electronics generation (burying in oblivion) calculate
Symbol, UjIt is Coulomb interactions in quantum dot, tij,σBe spin correlation different quantum dots between stiffness of coupling.In Hamiltonian
Last indicates the tunnelling between quantum dot and electrode, wherein VkβσIndicate quantum dot-tunnel knot tunnelling of spin correlation
Matrix element.
(2), the electric current and hot-fluid for passing through entire device model are calculated with unbalance distribution method, i.e., in electrode
Electronics occupies several pairs of times and differentiates, and in linear response range, i.e., ought be applied to the temperature difference at annular quantum-dot structure both ends
With the voltage of generation all level off to infinitesimal when, the electric current J of different spin directionse,σWith hot-fluid Jh,σIt can be expressed as；
It is the equilibrium temperature of annular quantum-dot structure, δ V and δ T is annular quantum dot respectively that wherein e, which is the electricity of electronics, T,
Voltage and temperature difference in structure, the coefficient in above formula are given by:
Wherein h is Planck's constant, μ=μL=μRIt is the chemical potential of lead, f (ε, μ)=1/ { 1+exp [(ε-μ)/kBT]}
It is Fermi distribution function.Tσ(ε) is the transmission coefficient with the electronics of spin correlation, can pass through formulaIt calculates and obtains, whereinIt is delay (advanced) lattice of the matrix form of Keldysh3 × 3
Matrix element in woods function.
(3), Green's function is solved with equation of motion method, as a result can indicated are as follows:
Wherein 3 × 3 matrixIt is the free Green's function of quantum dot, i.e., when quantum dot does not couple between by lead and point
Between interaction when Green's function.Its diagonal element is:
Off diagonal elementIt is all zero.The line width function of spin correlationIt is written as
Wherein ρβRepresent the spin polarizability of lead.Lag the self energy of Green's functionIt is also
3 × 3 matrixes,
(4), electronics in quantum dot is solved with Self-consistent equation occupy number:
Several Self-consistent equations that occupy of different spin direction electronics are
(5) calculation formula of thermoelectrical potential:
Each automatic rotary component SσIt is in electric current Je=Je,↑+Je,↓It is calculated under conditions of=0, by Sσ=-L1,σ/
(eTL0,σ) provide, charge (spin) thermoelectrical potential is by Sc(s)=S↑+(-)S↓It provides.
(6), with Fortran or Matlab software for calculation Program above equation, different items are calculated by numerical value
Under part charge and spin thermoelectrical potential with quantum dot energy level variation relation, find enhancing spin thermoelectrical potential ideal conditions, and
In practical application, then numerical value and the variation of thermoelectrical potential are incuded by thermoelectric effect detector
(7), main result is as follows:
Referring to Fig. 2, as δ tcWhen increase, charge thermoelectrical potential and spin thermoelectrical potential are increased with it, but the thermoelectrical potential that spins is increased
Amplitude is bigger, i.e., pyroelectric signal can be more obvious, shows if the stiffness of coupling between quantum dot is and spin dependence,
Spin thermoelectrical potential can significantly be reinforced, from fig. 2 it can be seen that the thermoelectrical potential of different spin directions can be moved to different directions
It is dynamic so that spin thermoelectrical potential enhancing, be also demonstrated by charge and spin thermoelectrical potential with quantum dot energy level variation relation and
Stiffness of coupling between annular quantum-dot structure quantum dot is to the intensity of Spin Dependent, and δ tcChange mainly pass through by changing
The thickness for becoming tunnel knot is realized.
Referring to Fig. 3, if thermoelectrical potential will appear more spikes there are when Coulomb interactions U in quantum dot, for enhancing
The value of thermoelectrical potential provides more working regions (the selection space of stiffness of coupling/tunnel knot thickness i.e. between quantum dot),
Meanwhile the value for the thermoelectrical potential that spins can achieve the value of charge thermoelectrical potential, illustrate when the Coulomb interactions in quantum dot takes not
With value when, charge and spin thermoelectrical potential with the stiffness of coupling between the variation relation and quantum dot of quantum dot energy level to Spin Dependent
Intensity, wherein the fixed value δ t of stiffness of coupling between annular quantum-dot structure quantum dotc=0.1.
Above embodiment cannot limit the protection scope of the invention, and the personnel of professional skill field are not departing from
In the case where the invention general idea, the impartial modification and variation done still fall within the range that the invention is covered
Within.
Claims (3)
1. a kind of method for enhancing the thermoelectrical potential that spins in annular quantum-dot structure, it is characterised in that the step of this method is as follows:
(1), three or three or more semiconductor-quantum-points are circularized into quantum-dot structure by tunnel knot coupling；
(2), it is limited by the space that cathodic probe carries out tri- directions X, Y and Z to annular quantum-dot structure；
(3), the left electrode and right electrode being connected with external circuit are installed in the two sides of annular quantum-dot structure, then in left electrode
Apply heat radiation with right electrode, enabling has temperature gradient between left electrode and right electrode；
(4), electronics is injected toward annular quantum-dot structure, allows spin upward with the electronics directed downwardly that spins in annular quantum-dot structure
It is separated under the influence of spin correlation coupling and temperature gradient, and turn left respectively electrode and right electrode direction move, allows ring
The spin thermoelectrical potential of shape quantum-dot structure further enhances.
2. the method according to claim 1 for enhancing the thermoelectrical potential that spins in annular quantum-dot structure, it is characterised in that described
The semiconductor-quantum-point particle size range of step 1 is 2nm~1 μm.
3. the method according to claim 1 for enhancing the thermoelectrical potential that spins in annular quantum-dot structure, it is characterised in that described
The thermal potential difference value range of step 3 is 5K~18K.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4583867A (en) * | 1983-04-21 | 1986-04-22 | Georges Gautheret | Self-energized commutation device sensitive to a temperature gradient |
| JPH09102616A (en) * | 1995-06-20 | 1997-04-15 | Max Planck Ges Foerderung Wissenschaft Ev | Manufacture of quantum structure and component containing quantum structure |
| JP2003004701A (en) * | 2001-06-25 | 2003-01-08 | Hitachi Electronics Eng Co Ltd | Microplate for electrophoresis |
| US20030218464A1 (en) * | 2002-05-22 | 2003-11-27 | Harman Theodore C. | Thermoelectric device test structure |
| CN108123003A (en) * | 2017-12-07 | 2018-06-05 | 上海电机学院 | A kind of method that three quantum-dot structure of semiconductor realizes mid and far infrared single photon detection |
| CN109309156A (en) * | 2018-09-29 | 2019-02-05 | 盐城师范学院 | A kind of Bi2Te3The preparation method of/graphene composite thermoelectric material |
-
2019
- 2019-04-25 CN CN201910343318.2A patent/CN110085733B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4583867A (en) * | 1983-04-21 | 1986-04-22 | Georges Gautheret | Self-energized commutation device sensitive to a temperature gradient |
| JPH09102616A (en) * | 1995-06-20 | 1997-04-15 | Max Planck Ges Foerderung Wissenschaft Ev | Manufacture of quantum structure and component containing quantum structure |
| JP2003004701A (en) * | 2001-06-25 | 2003-01-08 | Hitachi Electronics Eng Co Ltd | Microplate for electrophoresis |
| US20030218464A1 (en) * | 2002-05-22 | 2003-11-27 | Harman Theodore C. | Thermoelectric device test structure |
| CN108123003A (en) * | 2017-12-07 | 2018-06-05 | 上海电机学院 | A kind of method that three quantum-dot structure of semiconductor realizes mid and far infrared single photon detection |
| CN109309156A (en) * | 2018-09-29 | 2019-02-05 | 盐城师范学院 | A kind of Bi2Te3The preparation method of/graphene composite thermoelectric material |
Non-Patent Citations (2)
| Title |
|---|
| JIYUANBAI等: "The influence of side-coupled quantum dots on thermoelectric effect of parallel-coupled double quantum dot system", 《PHYSICA B: CONDENSED MATTER》 * |
| 王建明: "低维介观费米和玻色体系中的量子输运", 《中国博士学位论文全文数据库》 * |
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