CN110085536A - A kind of monitoring method and its device of etching metal layer rate - Google Patents
A kind of monitoring method and its device of etching metal layer rate Download PDFInfo
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- CN110085536A CN110085536A CN201910275629.XA CN201910275629A CN110085536A CN 110085536 A CN110085536 A CN 110085536A CN 201910275629 A CN201910275629 A CN 201910275629A CN 110085536 A CN110085536 A CN 110085536A
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- 238000005530 etching Methods 0.000 title claims abstract description 119
- 239000002184 metal Substances 0.000 title claims abstract description 112
- 238000012544 monitoring process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 133
- 239000011521 glass Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000001939 inductive effect Effects 0.000 claims description 14
- 239000007921 spray Substances 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The application provides the monitoring method and its device of a kind of etching metal layer rate, and etching metal layer device includes: glass substrate, and surface is prepared with metal layer to be etched；Optical signal transmitter is set to the side of glass substrate, for vertically emitting penetrability optical signal to glass substrate；Optical signal receiver, opposite optical signal transmitter are set to the other side of glass substrate, for receiving the optical signal across glass substrate of optical signal transmitter transmitting；Light shield is set between optical signal transmitter and optical signal receiver, and the line of three is vertical with the plane of glass substrate, has been used for mark action；Wherein, when glass substrate passes through light shield, optical signal transmitter emits optical signal and passes through light shield directive glass substrate, entering etching Duan Shiqi to the time point that optical signal receiver receives optical signal from glass substrate is that etching metal layer completes etching period used, is used to obtain the etch-rate of metal layer according to the film thickness of metal layer and etching period.
Description
Technical field
This application involves metal etch technical field more particularly to a kind of monitoring methods and its dress of etching metal layer rate
It sets.
Background technique
In TFT-LCD production process, the etching of metal layer needs to carry out using chemical liquid, but etch-rate can not be real
When monitor, when medical fluid characteristic change cause undercut or cross quarter when, can only pass through detection etching metal layer thickness
It just can confirm that etching situation, can not find in time, to will cause product batches sex differernce.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The application provides the monitoring method and its device of a kind of etching metal layer rate, can monitor the erosion of metal layer in real time
Etching speed avoids etching solution characteristic from changing and causes undercut or cross to carve.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of etching metal layer device, comprising:
Glass substrate, surface are prepared with metal layer to be etched；
Optical signal transmitter is set to the side of the glass substrate, wears for vertically emitting to the glass substrate
Permeability optical signal；
Optical signal receiver, the relatively described optical signal transmitter is set to the other side of the glass substrate, for receiving
The optical signal across the glass substrate of the optical signal transmitter transmitting；
Light shield is set between the optical signal transmitter and the optical signal receiver, and the line of three with it is described
The plane of glass substrate is vertical, has been used for mark action；
Wherein, when the glass substrate passes through the light shield, the optical signal transmitter emits the optical signal and passes through
Glass substrate described in the light shield directive enters etching Duan Shiqi from the glass substrate and receives to the optical signal receiver
The time point of the optical signal is that the etching metal layer completes etching period used, according to the film thickness of the metal layer and
The etching period obtains the etch-rate of the metal layer.
In the etching metal layer device of the application, the etching metal layer device further include:
Multiple nozzles, for spraying etching solution, the spraying area of the etching solution of the nozzles spray to the metal layer
Product covers and is greater than the entire glass substrate；
Multiple idler wheels, for the glass substrate being carried thereon is mobile to preset direction；
Wherein, the nozzle is located at the top of the glass substrate, and is located at the lower section of the optical signal receiver, multiple
Opposite correspond is arranged up and down for the nozzle and multiple idler wheels.
In the etching metal layer device of the application, the optical signal transmitter, the optical signal receiver and described
The corresponding position between the two neighboring nozzle/idler wheel of light shield.
In the etching metal layer device of the application, an optical signal transmitter and an optical signal receiver
And a light shield forms an optical signal inductive module, the number of the optical signal inductive module is multiple.
In the etching metal layer device of the application, the optical signal inductive module is between the glass substrate moving direction
Every distribution.
The application also provides a kind of monitoring method of etching metal layer rate, is applied to above-mentioned etching metal layer device, institute
State monitoring method the following steps are included:
It records the glass substrate and enters time point when etching section starts to be etched for etching initial point, in the glass
When substrate passes through the light shield, the optical signal transmitter is controlled to the glass substrate and emits penetrability optical signal, and is kept
Emission state；
During the metal layer is etched, control whether the optical signal receiver real time monitoring has optical signal
It penetrates out from the glass substrate；
If there is optical signal to penetrate out from the glass substrate, obtains the optical signal receiver and receive the optical signal
Etching end point of the time point as the metal layer；
It obtains the etching metal layer according to the etching end point and the etching initial point and completes etching period used, root
The etch-rate of the metal layer is obtained according to the film thickness and the etching period of the metal layer.
In the monitoring method of the application, the etching period of the metal layer is the etching end point and the etching
The time difference length of initial point.
In the monitoring method of the application, the etch-rate of the metal layer is the film thickness of the metal layer divided by the erosion
Carve the calculated value of time institute.
In the monitoring method of the application, during the metal layer is etched, if the optical signal receiver
The optical signal is not received, then the glass substrate continues to be etched to preset direction movement；
When optical signal inductive module described in the glass substrate is moved to next group, the group optical signal inductive module
In the optical signal transmitter emit penetrability optical signal to the glass substrate, and keep emission state, and control correspondence
The optical signal receiver real time monitoring whether there is optical signal to penetrate out from the glass substrate.
In the monitoring method of the application, the etch-rate of the metal layer is obtained, later further include:
Judge whether the etch-rate is greater than default etch-rate threshold value；
If then determining that the etching metal layer device and etching solution are abnormal, and stop carrying out the subsequent metal layer
Etching；
If not then continuing to be etched the subsequent metal layer.
The application's has the beneficial effect that compared to existing etching metal layer device, etching metal layer provided by the present application
The monitoring method and its device of rate are connect by lower section setting optical signal transmitter, light shield and optical signal on the glass substrate
Device is received, and keeps their line vertical with the plane of glass substrate, is with the time point that optical signal receiver receives optical signal
The time point that etching metal layer is completed, and combine the film thickness of metal layer that can calculate etch-rate, it can be to the etching of metal layer
Rate is monitored in real time, is changed to avoid Etaching device and etching solution characteristic and is caused undercut or carve excessively bad
Phenomenon, moreover, the device of the application is simple, method is easy to control, and cost is very cheap.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of application
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is etching metal layer apparatus structure schematic diagram provided by the embodiments of the present application；
Fig. 2 is the monitoring method flow chart of etching metal layer rate provided by the embodiments of the present application.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
The application is directed to existing etching metal layer device, when etching solution characteristic changes due to that can not monitor in real time
Etch-rate, the technical issues of causing etching metal layer insufficient or spend quarter, the present embodiment is able to solve the defect.
As shown in Figure 1, being etching metal layer apparatus structure schematic diagram provided by the embodiments of the present application.The etching metal layer
Device 10 includes: glass substrate 104, and surface is prepared with metal layer 105 to be etched；Optical signal transmitter 101 is set to described
The side of glass substrate 104, for vertically emitting penetrability optical signal to the glass substrate 104；Optical signal receiver
103, the relatively described optical signal transmitter 101 is set to the other side of the glass substrate 104, for receiving the optical signal hair
The optical signal across the glass substrate 104 that emitter 101 emits；Light shield 102, be set to the optical signal transmitter 101 with
Between the optical signal receiver 103, and the line of three is vertical with the plane of the glass substrate 104, and the light shield 102 is used
The mark action in.
Wherein, when the glass substrate 104 passes through the light shield 102, the optical signal transmitter 101 emits the light
Signal and the optical signal line 109 emitted by glass substrate 104 described in 102 directive of light shield, the optical signal transmitter 101
It may pass through the glass substrate 104, the metal layer 105 has reflex to the optical signal line 109.
The optical signal transmitter 101 is respectively correspondingly fixed on the glass substrate with the optical signal receiver 103
104 lower section and top, the light shield 102 are set to 101 side of optical signal transmitter, and corresponding positioned at the optical signal
The top of transmitter 101.
It records the glass substrate 104 and enters the time point of etching section for etching starting point, enter from the glass substrate 104
Etching Duan Shiqi is that the metal layer 105 has etched to the time point that the optical signal receiver 103 receives the optical signal
At etching period used, according to the available metal layer 105 of the film thickness of the metal layer 105 and the etching period
Etch-rate.The etch-rate for the metal layer 105 film thickness divided by the calculated value of the etching period.
The etching metal layer device 10 further include: multiple nozzles 106, for spraying etching solution to the metal layer 105
107, the spray area for the etching solution 107 that the nozzle 106 sprays covers and is greater than the entire glass substrate 104；It is more
A idler wheel 108, for the glass substrate 104 being carried thereon is mobile to preset direction.Wherein, the nozzle 106 is set
In the top of the glass substrate 104, and be located at the optical signal receiver 103 lower section, multiple nozzles 106 with it is multiple
About 108 idler wheel is opposite to correspond arrangement.
Wherein, the optical signal transmitter 101, the optical signal receiver 103 and the light shield 102 are corresponding is located at phase
Position between idler wheel 108 described in adjacent two nozzles 106/.
In the present embodiment, an optical signal transmitter 101 and an optical signal receiver 103 and one
The light shield 102 forms an optical signal inductive module, and the number of the optical signal inductive module is multiple, and along the glass
The setting of 104 moving direction interval of glass substrate.
In the present embodiment, after etching starts, the idler wheel 108 drives the glass substrate 104 to preset direction water
Translation is dynamic, and multiple nozzles 106 spray the etching solution 107 to the glass substrate 104 and are etched.
Etching metal layer device 10 provided in this embodiment, by the setting at the interval optical signal inductive module, in institute
It states during metal layer 105 is etched, controls whether the real time monitoring of optical signal receiver 103 has optical signal from described
Glass substrate 104 penetrates out.If there is optical signal to penetrate out from the glass substrate 104, obtains the optical signal and receive
Device 103 receives etching end point of the time point of the optical signal as the metal layer 105.According to the etching end point and the erosion
It carves initial point and obtains the metal layer 105 etching and complete etching period used, according to the film thickness of the metal layer 105 and described
Etching period obtains the etch-rate of the metal layer 105.
The etching metal layer device 10 further includes monitoring system, and the monitoring system is for judging that the etch-rate is
It is no to be greater than default etch-rate threshold value；If then determining that the etching metal layer device 10 and the etching solution 107 are abnormal, and stop
Only the subsequent metal layer 105 is etched；If not then continuing to be etched the subsequent metal layer 105.
As shown in connection with fig. 2, the application also provides a kind of monitoring method of etching metal layer rate, is applied to the metal layer
Etaching device 10, the monitoring method the following steps are included:
Step S101, recording the time point that the glass substrate enters when etching section starts to be etched is etching initial point,
When the glass substrate passes through the light shield, the optical signal transmitter is controlled to glass substrate transmitting penetrability light letter
Number, and keep emission state.
Step S102, during the metal layer is etched, controlling the optical signal receiver real time monitoring is
It is no to there is optical signal to penetrate out from the glass substrate.
Step S103, if the optical signal receiver does not receive the optical signal, the glass substrate continues to pre-
Set direction movement is etched；When optical signal inductive module described in the glass substrate is moved to next group, the group light
The optical signal transmitter in induction of signal mould group emits penetrability optical signal to the glass substrate, and keeps emitting shape
State, and control whether the corresponding optical signal receiver real time monitoring has optical signal to penetrate out from the glass substrate.
Step S104 obtains the optical signal receiver and receives if there is optical signal to penetrate out from the glass substrate
Etching end point of the time point of the optical signal as the metal layer.
Step S105 obtains the etching metal layer and completes erosion used according to the etching end point and the etching initial point
The time is carved, the etch-rate of the metal layer is obtained according to the film thickness of the metal layer and the etching period.
Wherein, the etching period of the metal layer is that the time difference of the etching end point and the etching initial point is long
Degree.The etch-rate of the metal layer for the metal layer film thickness divided by the calculated value of the etching period.
Step S106, judges whether the etch-rate is greater than default etch-rate threshold value.
Step S107, if not then continuing to be etched the subsequent metal layer.
Step S108 if then determining that the etching metal layer device and etching solution are abnormal, and stops to subsequent described
Metal layer is etched.
In conclusion the monitoring method and its device of etching metal layer rate provided by the present application, by glass substrate
Optical signal transmitter, light shield and optical signal receiver is arranged in upper and lower, and their line and the plane of glass substrate is made to hang down
Directly, using the time point that the time point that optical signal receiver receives optical signal completes as etching metal layer, and metal layer is combined
Film thickness can calculate etch-rate, can monitor in real time to the etch-rate of metal layer, to avoid Etaching device and etching
Liquid characteristic, which changes, causes the bad phenomenon of undercut or quarter excessively.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of etching metal layer device characterized by comprising
Glass substrate, surface are prepared with metal layer to be etched；
Optical signal transmitter is set to the side of the glass substrate, for vertically emitting penetrability to the glass substrate
Optical signal；
Optical signal receiver, the relatively described optical signal transmitter are set to the other side of the glass substrate, described for receiving
The optical signal across the glass substrate of optical signal transmitter transmitting；
Light shield is set between the optical signal transmitter and the optical signal receiver, and the line of three and the glass
The plane of substrate is vertical, has been used for mark action；
Wherein, when the glass substrate passes through the light shield, the optical signal transmitter emits the optical signal and by described
Glass substrate described in light shield directive, from the glass substrate enter etching Duan Shiqi receive to the optical signal receiver it is described
The time point of optical signal is that the etching metal layer completes etching period used, according to the film thickness of the metal layer and described
Etching period obtains the etch-rate of the metal layer.
2. etching metal layer device according to claim 1, which is characterized in that the etching metal layer device further include:
Multiple nozzles, for spraying etching solution to the metal layer, the spray area of the etching solution of the nozzles spray covers
It covers and is greater than the entire glass substrate；
Multiple idler wheels, for the glass substrate being carried thereon is mobile to preset direction；
Wherein, the nozzle is located at the top of the glass substrate, and is located at the lower section of the optical signal receiver, multiple described
Opposite correspond is arranged up and down for nozzle and multiple idler wheels.
3. etching metal layer device according to claim 2, which is characterized in that the optical signal transmitter, light letter
Number receiver and the corresponding position between the two neighboring nozzle/idler wheel of the light shield.
4. etching metal layer device according to claim 2, which is characterized in that an optical signal transmitter and one
The optical signal receiver and a light shield form an optical signal inductive module, of the optical signal inductive module
Number is multiple.
5. etching metal layer device according to claim 4, which is characterized in that the optical signal inductive module is along the glass
Glass substrate moving direction is spaced apart.
6. a kind of monitoring method of etching metal layer rate, which is characterized in that be applied to described in any one of claim 1-5
Etching metal layer device, the monitoring method the following steps are included:
It records the glass substrate and enters time point when etching section starts to be etched for etching initial point, in the glass substrate
When by the light shield, the optical signal transmitter is controlled to the glass substrate and emits penetrability optical signal, and keeps transmitting
State；
During the metal layer is etched, control whether the optical signal receiver real time monitoring has optical signal from institute
Glass substrate is stated to penetrate out；
If there is optical signal to penetrate out from the glass substrate, the time that the optical signal receiver receives the optical signal is obtained
Etching end point of the point as the metal layer；
It obtains the etching metal layer according to the etching end point and the etching initial point and completes etching period used, according to institute
The film thickness and the etching period of stating metal layer obtain the etch-rate of the metal layer.
7. monitoring method according to claim 6, which is characterized in that the etching period of the metal layer is the erosion
Carve the time difference length of terminal and the etching initial point.
8. monitoring method according to claim 6, which is characterized in that the etch-rate of the metal layer is the metal layer
Film thickness divided by the calculated value of etching period institute.
9. monitoring method according to claim 6, which is characterized in that during the metal layer is etched, if
The optical signal receiver does not receive the optical signal, then the glass substrate continues to be etched to preset direction movement；
When optical signal inductive module described in the glass substrate is moved to next group, in the group optical signal inductive module
The optical signal transmitter emits penetrability optical signal to the glass substrate, and keeps emission state, and control corresponding institute
State whether optical signal receiver real time monitoring has optical signal to penetrate out from the glass substrate.
10. monitoring method according to claim 6, which is characterized in that obtain the etch-rate of the metal layer, later also
Include:
Judge whether the etch-rate is greater than default etch-rate threshold value；
If then determining the etching metal layer device and etching solution, and stop being etched the subsequent metal layer；
If not then continuing to be etched the subsequent metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910275629.XA CN110085536A (en) | 2019-04-08 | 2019-04-08 | A kind of monitoring method and its device of etching metal layer rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910275629.XA CN110085536A (en) | 2019-04-08 | 2019-04-08 | A kind of monitoring method and its device of etching metal layer rate |
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| Publication Number | Publication Date |
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| CN110085536A true CN110085536A (en) | 2019-08-02 |
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| CN201910275629.XA Pending CN110085536A (en) | 2019-04-08 | 2019-04-08 | A kind of monitoring method and its device of etching metal layer rate |
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| US20090065478A1 (en) * | 2007-09-11 | 2009-03-12 | Dockery Kevin P | Measuring etching rates using low coherence interferometry |
| CN102023200A (en) * | 2009-09-22 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Solution concentration monitoring method |
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| CN202995944U (en) * | 2012-12-18 | 2013-06-12 | 北车风电有限公司 | Intelligent region intrusion alarming system |
| CN105575846A (en) * | 2016-03-15 | 2016-05-11 | 武汉华星光电技术有限公司 | Metal wet etching end point monitoring method and device thereof |
| CN106586023A (en) * | 2016-11-29 | 2017-04-26 | 中国直升机设计研究所 | Synchronous data acquisition system and method |
| CN108220962A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | Control the device and method of wet etching terminal |
-
2019
- 2019-04-08 CN CN201910275629.XA patent/CN110085536A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281374A (en) * | 2007-04-06 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for testing whether etching solution is valid or not |
| US20090065478A1 (en) * | 2007-09-11 | 2009-03-12 | Dockery Kevin P | Measuring etching rates using low coherence interferometry |
| CN102023200A (en) * | 2009-09-22 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Solution concentration monitoring method |
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| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190802 |
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| RJ01 | Rejection of invention patent application after publication |