CN110085500B - Method and system for improving ion implantation dose control precision - Google Patents
Method and system for improving ion implantation dose control precision Download PDFInfo
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- CN110085500B CN110085500B CN201910404828.6A CN201910404828A CN110085500B CN 110085500 B CN110085500 B CN 110085500B CN 201910404828 A CN201910404828 A CN 201910404828A CN 110085500 B CN110085500 B CN 110085500B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
Abstract
The invention discloses a method and a system for improving ion implantation dose control precision, wherein the method comprises the following steps: acquisition bundleRadial distribution of the flow beam spot; calculating the distance from the center of mass of the beam spot to the center of the target disc, namely the center of mass value R of the beam spot according to the radial distribution of the beam spot; according to the formula
Calculating the radial scanning speed V of the target disc; and driving the target disc to perform radial scanning at the radial scanning speed V, and simultaneously driving the target disc to rotate to perform circular scanning. According to the embodiment of the invention, the radial scanning speed V of the target disc is calculated by using the distance from the beam spot center of mass to the target disc center instead of the distance from the beam spot center to the target disc center, so that the problem of unstable injection dose caused by the change of beam spot distribution is solved, and the high-precision control of the injection dose is realized.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a method and a system for improving ion implantation dose control precision.
Background
In semiconductor manufacturing engineering, ion implantation and rapid annealing are combined for impurity doping. The "ion implantation" is an important way to selectively dope the wafer, and can achieve both dose control and better control the uniformity and penetration depth of impurities, so the ion implanter is a key device for achieving the ion implantation.
With the development of semiconductor integrated circuits, the feature size of devices has entered deep submicron and nanometer levels, the reduction of the feature size and the increase of the silicon wafer size put forward higher requirements on the accuracy and uniformity of the implantation dose, which directly affect the yield and product performance of chip production, so the accuracy and uniformity of the implantation dose are one of the key indexes for measuring the performance of the ion implanter.
At present, the full mechanical scanning adopts a beam spot center algorithm, the control precision of the dosage is ensured by debugging a good ion beam quality, but the state of equipment is changed, the beam spot distribution is also changed, and the same beam spot distribution cannot be repeated every time. Therefore, the scanning speed is calculated by the beam spot center algorithm, which causes the problem of unstable implantation dose precision of the mechanical scanning system of the round target plate of the ion implanter.
Disclosure of Invention
The embodiment of the invention provides a method and a system for improving ion implantation dose control precision, which are used for at least solving the problem that the implantation dose precision of a mechanical scanning system of a round target disc of an ion implanter is unstable due to the fact that the scanning speed is calculated through a beam spot center algorithm in the prior art.
In one aspect, an embodiment of the present invention provides a method for improving ion implantation dose control accuracy, including:
obtaining the radial distribution M (y) of beam spots of the beam;
calculating the distance from the center of mass of the beam spot to the center of the target disc, namely the center of mass value R of the beam spot according to the radial distribution M (y) of the beam spot;
calculating the radial scanning speed V of the target disk according to a formula, wherein K is 1/(2 pi qn), q represents unit charge quantity, q is 1.6 x 10-19 coulombs, n represents charge quantity, I represents total current, R represents the centroid value of the beam spot,
representing a preset ion implantation dosage;
and driving the target disc to perform radial scanning at the radial scanning speed V, and simultaneously driving the target disc to rotate to perform circular scanning.
Further, the obtaining of the radial distribution m (y) of the beam spot specifically includes:
acquiring the target current of the target disc and the hole current of the beam spot passing through a beam spot collecting hole on the target disc;
and acquiring the radial distribution M (y) of the beam spot of the beam according to the target current and the hole current.
In another aspect, an embodiment of the present invention provides a system for improving accuracy of ion implantation dose control, including:
the beam spot acquisition unit is used for acquiring radial distribution M (y) of beam spots of the beam;
the mass center calculating unit is used for calculating the distance from the mass center of the beam spot to the center of the target disc, namely the mass center value R of the beam spot according to the radial distribution M (y) of the beam spot;
a scanning speed calculating unit for calculating the radial scanning speed V of the target disk according to a formula, wherein K is 1/2 pi qn, and q representsUnit charge amount, q is 1.6 × 10-19 coulombs, n represents charge amount, I represents total current, R represents centroid value of beam spot,
representing a preset ion implantation dosage;
the radial scanning controller is used for controlling a radial scanning mechanism to drive the target disc to carry out radial scanning at the radial scanning speed V;
and the rotating motor is used for driving the target disc to rotate to perform circular scanning.
Further, the system further comprises:
the target current acquisition unit is used for acquiring the target current of the target disc;
the hole current acquisition unit is used for acquiring the hole current of the beam spot passing through the beam spot acquisition hole on the target disc;
the beam spot acquisition unit acquires radial distribution M (y) of the beam spot according to the target current and the hole current.
Furthermore, a plurality of silicon wafers are arranged on the target disc in a circular ring manner, and the circular ring and the target disc have a common center of rotation.
Further, the beam spot collection unit is a faraday cup.
The embodiment of the invention utilizes the distance from the beam spot center of mass to the target disc center to replace the distance from the beam spot center to the target disc center to calculate the radial scanning speed V of the target disc, overcomes the problem of unstable injection dose caused by the change of beam spot distribution, realizes the high-precision control of the injection dose, improves the uniformity of the in-chip, in-chip and in-batch, and solves the problem of unstable injection dose precision of a mechanical scanning system of the round target disc of the ion implanter caused by calculating the scanning speed by the beam spot center algorithm in the prior art.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart of a method of improving ion implant dose control accuracy in accordance with the present invention;
FIG. 2 is a schematic diagram of a system for improving ion implantation dose control accuracy according to a preferred embodiment of the present invention;
FIG. 3 is a schematic view of the rotary scanning structure of the round target disk according to the present invention.
In the figure: 1. a target disc; 2. a silicon wafer; 3. beam current; 4. a Faraday cup; 5. a beam spot collection aperture; 6. a rotating electric machine; 7. a support; 8. and a cylinder.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
A first embodiment of the present invention provides a method for improving the accuracy of ion implantation dose control, as shown in fig. 1 and 3, comprising the following specific steps:
s101, obtaining the radial distribution M (y) of beam spots of the beam current 3.
S102, calculating the distance from the center of mass of the beam spot to the center of the target disc 1, namely the center of mass value R of the beam spot according to the radial distribution M (y) of the beam spot.
S103, according to the formula
Calculating the radial scanning speed V of the target disc 1, wherein K is 1/2 pi qn, and q represents a singleThe bit charge amount, q is 1.6 multiplied by 10-19 coulombs, n represents the charge amount, I represents the total current, R represents the centroid value of the beam spot,
representing a preset ion implantation dose.
And S104, driving the target disc 1 to perform radial scanning at the radial scanning speed V, and simultaneously driving the target disc 1 to rotate to perform circular scanning.
Step S101 specifically includes: acquiring the target current of the target disc 1 and the hole current of the beam spot passing through the beam spot collecting hole 5 on the target disc 1; obtaining a radial distribution M (y) of the beam spot from the target current and the aperture current.
In the embodiment of the present invention, y in the radial distribution m (y) is only one letter, and may represent not only the x direction of the coordinate axis but also the y direction. In fig. 3, y in the radial distribution m (y) represents the y direction.
According to the embodiment of the invention, the beam spot centroid distance, namely the centroid value of the beam spot, is calculated by collecting the radial distribution of the beam spot, the centroid value is adopted to quantify the distribution condition of the beam spot, the beam spot centroid distance is adopted to replace the original beam spot center distance to calculate the radial scanning speed of the target disk 1, the problem of unstable injection dose caused by the change of the beam spot distribution is solved, the radial scanning of the target disk 1 is completed by controlling the radial scanning mechanism through the radial scanning controller, and the high-precision dose control of a required area is realized.
The embodiment of the invention utilizes the distance from the beam spot center of mass to the center of the target disk 1 to replace the distance from the beam spot center to the center of the target disk 1 to calculate the radial scanning speed V of the target disk 1, realizes the high-precision control of the injection dose, improves the uniformity of the in-wafer, in-wafer and in-batch, and solves the problem that the injection dose precision of the mechanical scanning system of the circular target disk 1 of the ion implanter is unstable due to the fact that the scanning speed is calculated by the beam spot center algorithm in the prior art.
As shown in fig. 2 and 3, a second embodiment of the present invention provides a system for improving the accuracy of ion implantation dose control, comprising:
the beam spot acquisition unit is used for acquiring radial distribution M (y) of beam spots of the beam current 3;
the mass center calculating unit is used for calculating the distance from the mass center of the beam spot to the center of the target disc 1, namely the mass center value R of the beam spot according to the radial distribution M (y) of the beam spot;
a scanning speed calculating unit for calculating a scanning speed according to a formula
Calculating the radial scanning speed V of the target disk 1, wherein K is 1/2 pi qn, q is unit charge quantity, q is 1.6 x 10-19 coulomb, n is charge quantity, I is total current, R is the centroid value of the beam spot,
representing a preset ion implantation dosage;
the radial scanning controller is used for controlling a radial scanning mechanism to drive the target disc 1 to carry out radial scanning at the radial scanning speed V;
and the rotating motor 6 is used for driving the target disc 1 to rotate to perform circular scanning.
In fig. 3, a rotating motor 6 is integrated with a support 7, and the rotating motor 6 drives the circular target disk 1 to perform circular scanning. The radial scanning mechanism can be a cylinder 8 or a common motor, and the mode of driving the round target disc 1 to carry out radial scanning can adopt various prior arts. When the radial scanning mechanism is the air cylinder 8, the output shaft of the air cylinder 8 drives the rotating motor 6, the support 7 and the round target disc 1 to perform radial scanning, and the radial scanning center is the rotating center of the round target disc 1.
In the embodiment of the present invention, y in the radial distribution m (y) is only one letter, and may represent not only the x direction of the coordinate axis but also the y direction. In fig. 3, y in the radial distribution m (y) represents the y direction.
Optionally, the system further includes:
the target current acquisition unit is used for acquiring the target current of the target disc 1;
the hole current acquisition unit is used for acquiring the hole current of the beam spot passing through the beam spot acquisition hole 5 on the target disc 1;
the beam spot acquisition unit acquires radial distribution M (y) of the beam spot according to the target current and the hole current.
The radial distribution m (y) is the hole current If/(hole current If + target current Id).
Optionally, a plurality of silicon wafers 2 are arranged on the target disk 1, the silicon wafers 2 are arranged on the target disk 1 in a circular ring shape, and the circular ring is concentric with the rotation center of the target disk 1.
Optionally, the beam spot collection unit is a faraday cup 4.
The beam spot collecting hole 5 and the Faraday cup 4 behind the hole spot collecting hole complete the collection of the hole beam 3. The Faraday cup 4 is a vacuum detector made of metal and designed in a cup shape for measuring the incident intensity of charged particles. The measured current can be used to determine the number of incident electrons or ions. The number of the beam spot collecting holes 5 is at least one.
According to the embodiment of the invention, the beam spot collecting holes are additionally arranged on the round target plate 1, so that errors among different machine tables can be eliminated.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A method for improving ion implantation dose control accuracy, comprising:
obtaining the radial distribution M (y) of beam spots of the beam;
calculating the distance from the center of mass of the beam spot to the center of the target disc, namely the center of mass value R of the beam spot according to the radial distribution M (y) of the beam spot;
according to the formula
Calculating the radial scanning speed V of the target disk, wherein K is 1/(2 pi qn), q represents unit charge quantity, and q is 1.6 × 10－19Coulomb, n represents charge quantity, I represents total current, which is equal to the sum of target current of the target disk and hole current of the beam spot passing through the beam spot collecting hole on the target disk, R represents the mass center value of the beam spot, and phi represents the preset ion implantation dosage;
and driving the target disc to perform radial scanning at the radial scanning speed V, and simultaneously driving the target disc to rotate to perform circular scanning.
2. The method of claim 1, wherein said obtaining a radial distribution m (y) of the beam spot comprises:
acquiring the target current of the target disc and the hole current of the beam spot passing through a beam spot collecting hole on the target disc;
and acquiring the radial distribution M (y) of the beam spot of the beam according to the target current and the hole current.
3. A system for improving accuracy of ion implantation dose control, comprising:
the beam spot acquisition unit is used for acquiring radial distribution M (y) of beam spots of the beam;
the mass center calculating unit is used for calculating the distance from the mass center of the beam spot to the center of the target disc, namely the mass center value R of the beam spot according to the radial distribution M (y) of the beam spot;
a scanning speed calculating unit for calculating a scanning speed according to a formula
Calculating the radial scanning speed V of the target disk, wherein K is 1/(2 pi qn), q represents unit charge quantity, and q is 1.6 × 10－19Coulomb, n represents charge quantity, I represents total current, which is equal to the sum of target current of the target disk and hole current of the beam spot passing through the beam spot collecting hole on the target disk, R represents the mass center value of the beam spot, and phi represents the preset ion implantation dosage;
the radial scanning controller is used for controlling a radial scanning mechanism to drive the target disc to carry out radial scanning at the radial scanning speed V;
and the rotating motor is used for driving the target disc to rotate to perform circular scanning.
4. The system of claim 3, wherein the system further comprises:
the target current acquisition unit is used for acquiring the target current of the target disc;
the hole current acquisition unit is used for acquiring the hole current of the beam spot passing through the beam spot acquisition hole on the target disc;
the beam spot acquisition unit acquires radial distribution M (y) of the beam spot according to the target current and the hole current.
5. The system of claim 3, wherein the target disk has a plurality of silicon wafers disposed thereon in a circular ring concentric with the target disk center of rotation.
6. The system of claim 3, wherein the beam spot collection unit is a Faraday cup.
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| CN201910404828.6A CN110085500B (en) | 2019-05-15 | 2019-05-15 | Method and system for improving ion implantation dose control precision |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4724324A (en) * | 1986-11-24 | 1988-02-09 | Varian Associates, Inc. | Method and apparatus for ion beam centroid location |
| SG138445A1 (en) * | 2003-02-14 | 2008-01-28 | Asml Netherlands Bv | Device and method for wafer alignment with reduced tilt sensitivity |
| US7057192B2 (en) * | 2004-02-06 | 2006-06-06 | Kaim Robert E | Radial scan arm and collimator for serial processing of semiconductor wafers with ribbon beams |
| EP1738393B1 (en) * | 2004-04-05 | 2010-08-04 | Axcelis Technologies, Inc. | Drive system for scanning a workpiece with an ion beam |
| US6989545B1 (en) * | 2004-07-07 | 2006-01-24 | Axcelis Technologies, Inc. | Device and method for measurement of beam angle and divergence |
| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| JP5701201B2 (en) * | 2011-12-19 | 2015-04-15 | 株式会社Ｓｅｎ | Ion implantation method and ion implantation apparatus |
| CN203434124U (en) * | 2013-08-20 | 2014-02-12 | 中芯国际集成电路制造(北京)有限公司 | Ion beam measurement guiding device used for ion implanter |
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