CN110085500A - A kind of method and system improving ion implantation dosage control precision - Google Patents
A kind of method and system improving ion implantation dosage control precision Download PDFInfo
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- CN110085500A CN110085500A CN201910404828.6A CN201910404828A CN110085500A CN 110085500 A CN110085500 A CN 110085500A CN 201910404828 A CN201910404828 A CN 201910404828A CN 110085500 A CN110085500 A CN 110085500A
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 description 4
- 101150038956 cup-4 gene Proteins 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
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- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
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- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of method and systems of raising ion implantation dosage control precision, wherein the described method includes: obtaining the radial distribution of line beam spot；According to the radial distribution of the beam spot, beam spot mass center is calculated to the distance at target disc center, i.e. the center of mass values R of beam spot；According to formulaCalculate target disc radial scan speed V；It drives the target disc to do radial scan with the radial scan speed V, while target disc rotation being driven to do annulus scanning.The embodiment of the present invention replaces beam spot center to calculate target disc radial scan speed V to the distance at target disc center using the distance of beam spot mass center to target disc center, the unstable problem of the variation bring implantation dosage of beam spot distribution is overcome, realizes the high-precision control of implantation dosage.
Description
Technical field
The invention belongs to field of semiconductor manufacture, especially a kind of ion implantation dosage that improves controls the method for precision and is
System.
Background technique
In semiconductors manufacture engineering, impurity doping mostly uses ion implanting to accelerate the mode that fast annealing combines." ion
Injection " is that the important way of selective doping is carried out to chip, has both been able to achieve dosage control, while also can preferably control impurity
Uniformity and penetration depth, therefore ion implantation apparatus be realize ion implanting key equipment.
With the development of semiconductor integrated circuit, the characteristic size of device comes into deep-submicron and nanometer scale, special
The reduction of size and the increase of die size are levied, more stringent requirements are proposed for accuracy and uniformity to implantation dosage, it is straight
The yield rate and properties of product for influencing chip production are connect, therefore the precision of implantation dosage and uniformity are to measure ion implantation apparatus
One of the key index of energy.
Full mechenical scan is guaranteed using beam spot CENTER ALGORITHM by debugging a good ion beam quality at present
The control precision of dosage, but the state of equipment can change, and beam spot distribution is also variation, and cannot repeat same beam every time
Spot distribution.Therefore, scanning speed is calculated by beam spot CENTER ALGORITHM, will lead to ion implantation apparatus circle target disc mechanical scanning system
Implantation dosage precision instability problem.
Summary of the invention
The embodiment of the present invention provides a kind of method and system of raising ion implantation dosage control precision, at least to solve
The prior art calculates scanning speed by beam spot CENTER ALGORITHM, will lead to ion implantation apparatus circle target disc mechanical scanning system injection
Accuracy of dose instability problem.
On the one hand, the embodiment of the present invention provides a kind of method of raising ion implantation dosage control precision, comprising:
Obtain the radial distribution M (y) of line beam spot；
According to the radial distribution M (y) of the beam spot, beam spot mass center is calculated to the distance at target disc center, the i.e. mass center of beam spot
Value R；
Target disc radial scan speed V is calculated according to formula, wherein K=1/ (2 π qn), q indicate unit charge amount, q=1.6
× 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the center of mass values of beam spot,Indicate default ion implantation dosage；
It drives the target disc to do radial scan with the radial scan speed V, while target disc rotation being driven to do annulus scanning.
Further, the radial distribution M (y) for obtaining line beam spot, specifically includes:
The target current and beam spot that obtain the target disc acquire the hole electric current in hole by beam spot on target disc；
The radial distribution M (y) of line beam spot is obtained according to the target current and hole electric current.
On the other hand, the embodiment of the present invention provides a kind of system of raising ion implantation dosage control precision, and feature exists
In, comprising:
Beam spot acquisition unit, for obtaining the radial distribution M (y) of line beam spot；
Centroid computation unit calculates beam spot mass center to target disc center for the radial distribution M (y) according to the beam spot
Distance, i.e. the center of mass values R of beam spot；
Scanning speed computing unit, for calculating target disc radial scan speed V according to formula, wherein K=1/2 π qn, q table
Showing unit charge amount, q=1.6 × 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the center of mass values of beam spot,Table
Show default ion implantation dosage；
Radial scan controller drives the target disc to do with the radial scan speed V for controlling radial scan mechanism
Radial scan；
Rotating electric machine, for driving the target disc rotation to do annulus scanning.
Further, the system also includes:
Target current acquisition unit, for obtaining the target current of the target disc；
Hole current acquisition unit passes through the hole electric current in beam spot acquisition hole on target disc for obtaining the beam spot；
The beam spot acquisition unit obtains the radial distribution M (y) of beam spot according to the target current and hole electric current.
Further, be provided with multiple silicon wafers on the target disc, multiple silicon wafers are arranged on target disc in annulus, the annulus with
The concyclic heart of target disc rotation center.
Further, the beam spot acquisition unit is Faraday cup.
The embodiment of the present invention replaces beam spot center to the distance at target disc center using the distance of beam spot mass center to target disc center
Target disc radial scan speed V is calculated, the unstable problem of the variation bring implantation dosage of beam spot distribution is overcome, realizes injection
The high-precision control of dosage, improve in piece, between piece, batch between uniformity, solve the prior art by beam spot CENTER ALGORITHM to count
Scanning speed is calculated, will lead to ion implantation apparatus circle target disc mechanical scanning system implantation dosage precision instability problem.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, the followings are specific embodiments of the present invention.
Detailed description of the invention
By reading the following detailed description of the preferred embodiment, various other advantages and benefits are common for this field
Technical staff will become clear.The drawings are only for the purpose of illustrating a preferred embodiment, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings:
Fig. 1 is a kind of flow chart for improving ion implantation dosage and controlling the method for precision of the present invention；
Fig. 2 is a kind of theory structure signal for improving ion implantation dosage and controlling the system preferred embodiment of precision of the present invention
Figure；
Fig. 3 is the structural schematic diagram of circle target disc rotary scanning in the present invention.
In figure: 1, target disc；2, silicon wafer；3, line；4, Faraday cup；5, beam spot acquires hole；6, rotating electric machine；7, support；
8, cylinder.
Specific embodiment
Exemplary embodiments of the present disclosure are described in more detail below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
It is fully disclosed to those skilled in the art.
First embodiment of the invention provides a kind of method of raising ion implantation dosage control precision, as shown in figs. 1 and 3,
Comprising the following specific steps
S101 obtains the radial distribution M (y) of 3 beam spot of line.
S102 calculates beam spot mass center to the distance at 1 center of target disc, i.e. beam spot according to the radial distribution M (y) of the beam spot
Center of mass values R.
S103, according to formulaCalculate 1 radial scan speed V of target disc, wherein K=1/2 π qn, q indicate unit electricity
Lotus amount, q=1.6 × 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the center of mass values of beam spot,Expression preset from
Sub- implantation dosage.
S104 drives the target disc 1 to do radial scan with the radial scan speed V, while the rotation of target disc 1 being driven to do circle
Ring scanning.
Step S101 is specifically included: the target current and beam spot for obtaining the target disc 1 pass through beam spot acquisition hole 5 on target disc 1
Hole electric current；The radial distribution M (y) of beam spot is obtained according to the target current and hole electric current.
In the embodiment of the present invention, y is a letter in radial distribution M (y), not only can with the direction x of indicates coordinate axis,
It can also indicate the direction y.In Fig. 3, y indicates the direction y in radial distribution M (y).
The embodiment of the present invention by calculating beam spot centroid distance, that is, beam spot center of mass values to the radially-arranged acquisition of beam spot,
The distribution situation of beam spot is quantified using center of mass values, former beam spot centre distance is substituted using beam spot centroid distance and calculates target disc
1 radial scan speed overcomes the unstable problem of the variation bring implantation dosage of beam spot distribution, is controlled by radial scan
Device controls radial scan of the radial scan mechanism completion to target disc 1, realizes the high-precision dosage control of desired zone, solution of the present invention
Certainly influence of the various distributions of 3 beam spot of line to implantation dosage realizes the high-precision control of implantation dosage, while energy of the present invention
Improve the uniformity of ion implantation dosage.
The embodiment of the present invention using beam spot mass center to 1 center of target disc distance instead of beam spot center to target disc 1 center away from
From 1 radial scan speed V of target disc is calculated, realize the high-precision control of implantation dosage, improve in piece, between piece, batch between uniformity, solution
The prior art of having determined calculates scanning speed by beam spot CENTER ALGORITHM, will lead to ion implantation apparatus circle 1 mechanical scanning system of target disc
System implantation dosage precision instability problem.
As shown in Figures 2 and 3, second embodiment of the invention provides a kind of system of raising ion implantation dosage control precision,
Include:
Beam spot acquisition unit, for obtaining the radial distribution M (y) of 3 beam spot of line；
Centroid computation unit calculates beam spot mass center to 1 center of target disc for the radial distribution M (y) according to the beam spot
Distance, i.e. the center of mass values R of beam spot；
Scanning speed computing unit, for according to formulaCalculate 1 radial scan speed V of target disc, wherein K=1/
2 π qn, q indicate unit charge amount, and q=1.6 × 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the matter of beam spot
Center value,Indicate default ion implantation dosage；
Radial scan controller drives the target disc 1 to do with the radial scan speed V for controlling radial scan mechanism
Radial scan；
Rotating electric machine 6, for driving the rotation of target disc 1 to do annulus scanning.
In Fig. 3, rotating electric machine 6 is solidified as a whole with support 7, and rotating electric machine 6 drives circle target disc 1 to do annulus scanning.Radial direction is swept
Retouching mechanism can be cylinder 8, be also possible to ordinary motor, and the mode for driving round target disc 1 to do radial scan can use a variety of
The prior art.When radial scan mechanism is cylinder 8, output shaft driving rotating electric machine 6, support 7 and the circle target disc 1 of cylinder 8 are done
Radial scan, radial scan center are the rotation centers of round target disc 1.
In the embodiment of the present invention, y is a letter in radial distribution M (y), not only can with the direction x of indicates coordinate axis,
It can also indicate the direction y.In Fig. 3, y indicates the direction y in radial distribution M (y).
Optionally, the system also includes:
Target current acquisition unit, for obtaining the target current of the target disc 1；
Hole current acquisition unit passes through the hole electric current in beam spot acquisition hole 5 on target disc 1 for obtaining the beam spot；
The beam spot acquisition unit obtains the radial distribution M (y) of beam spot according to the target current and hole electric current.
Radial distribution M (y)=hole electric current If/ (hole electric current If+ target current Id).
Optionally, multiple silicon wafers 2 are provided on the target disc 1, multiple silicon wafers 2 are arranged on target disc 1 in annulus, the circle
Ring and the concyclic heart of 1 rotation center of target disc.
Optionally, the beam spot acquisition unit is Faraday cup 4.
Beam spot acquires the collection in hole 5 and the completion hole line 3 of Faraday cup 4 thereafter.Faraday cup 4 is that a kind of metal is set up
Cup-shaped is counted into, for measuring a kind of vacuum detector of charged particle incident intensity.The electric current measured can be used to determine incidence
The quantity of electronics or ion.The quantity that beam spot acquires hole 5 is at least one.
The embodiment of the present invention increases beam spot in circle target disc 1 and collects hole, can eliminate the error between different platform.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do
There is also other identical elements in the process, method of element, article or device.
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
Through the above description of the embodiments, those skilled in the art can be understood that above-described embodiment side
Method can be realized by means of software and necessary general hardware platform, naturally it is also possible to by hardware, but in many cases
The former is more preferably embodiment.Based on this understanding, technical solution of the present invention substantially in other words does the prior art
The part contributed out can be embodied in the form of software products, which is stored in a storage medium
In (such as ROM/RAM, magnetic disk, CD), including some instructions are used so that a terminal (can be mobile phone, computer, service
Device, air conditioner or network equipment etc.) execute method described in each embodiment of the present invention.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form, all of these belong to the protection of the present invention.
Claims (6)
1. a kind of method for improving ion implantation dosage control precision characterized by comprising
Obtain the radial distribution M (y) of line beam spot；
According to the radial distribution M (y) of the beam spot, beam spot mass center is calculated to the distance at target disc center, i.e. the center of mass values R of beam spot；
According to formulaCalculate target disc radial scan speed V, wherein K=1/ (2 π qn), q indicate unit charge amount, q=
1.6 × 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the center of mass values of beam spot,Indicate default ion implanting agent
Amount；
It drives the target disc to do radial scan with the radial scan speed V, while target disc rotation being driven to do annulus scanning.
2. the method as described in claim 1, which is characterized in that the radial distribution M (y) for obtaining line beam spot, it is specific to wrap
It includes:
The target current and beam spot that obtain the target disc acquire the hole electric current in hole by beam spot on target disc；
The radial distribution M (y) of line beam spot is obtained according to the target current and hole electric current.
3. a kind of system for improving ion implantation dosage control precision characterized by comprising
Beam spot acquisition unit, for obtaining the radial distribution M (y) of line beam spot；
Centroid computation unit, for the radial distribution M (y) according to the beam spot, calculate beam spot mass center to target disc center distance,
That is the center of mass values R of beam spot；
Scanning speed computing unit, for according to formulaCalculate target disc radial scan speed V, wherein K=1/2 π qn,
Q indicates unit charge amount, and q=1.6 × 10-19 coulombs, n indicates that the quantity of electric charge, I indicate total current, and R indicates the center of mass values of beam spot,Indicate default ion implantation dosage；
Radial scan controller drives the target disc to do radial direction with the radial scan speed V for controlling radial scan mechanism
Scanning；
Rotating electric machine, for driving the target disc rotation to do annulus scanning.
4. system as claimed in claim 3, which is characterized in that the system also includes:
Target current acquisition unit, for obtaining the target current of the target disc；
Hole current acquisition unit passes through the hole electric current in beam spot acquisition hole on target disc for obtaining the beam spot；
The beam spot acquisition unit obtains the radial distribution M (y) of beam spot according to the target current and hole electric current.
5. system as claimed in claim 3, which is characterized in that be provided with multiple silicon wafers on the target disc, multiple silicon wafers are in target
It is arranged on disk in annulus, the annulus and the concyclic heart of target disc rotation center.
6. system as claimed in claim 3, which is characterized in that the beam spot acquisition unit is Faraday cup.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910404828.6A CN110085500B (en) | 2019-05-15 | 2019-05-15 | Method and system for improving ion implantation dose control precision |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910404828.6A CN110085500B (en) | 2019-05-15 | 2019-05-15 | Method and system for improving ion implantation dose control precision |
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| CN110085500B CN110085500B (en) | 2021-03-30 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4724324A (en) * | 1986-11-24 | 1988-02-09 | Varian Associates, Inc. | Method and apparatus for ion beam centroid location |
| CN1521568A (en) * | 2003-02-14 | 2004-08-18 | Asml荷兰有限公司 | Device and method for wafer alignment with reduced tilt sensitivity |
| US20050173656A1 (en) * | 2004-02-06 | 2005-08-11 | Kaim Robert E. | Radial scan arm and collimator for serial processing of semiconductor wafers with ribbon beams |
| CN1961401A (en) * | 2004-04-05 | 2007-05-09 | 艾克塞利斯技术公司 | Reciprocating drive for scanning a workpiece through an ion beam |
| CN101015033A (en) * | 2004-07-07 | 2007-08-08 | 艾克塞利斯技术公司 | Device and method for measurement of beam angle and divergence normal to plane of scanned beam or ribbon beam |
| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| CN103165373A (en) * | 2011-12-19 | 2013-06-19 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
| CN203434124U (en) * | 2013-08-20 | 2014-02-12 | 中芯国际集成电路制造(北京)有限公司 | Ion beam measurement guiding device used for ion implanter |
-
2019
- 2019-05-15 CN CN201910404828.6A patent/CN110085500B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4724324A (en) * | 1986-11-24 | 1988-02-09 | Varian Associates, Inc. | Method and apparatus for ion beam centroid location |
| CN1521568A (en) * | 2003-02-14 | 2004-08-18 | Asml荷兰有限公司 | Device and method for wafer alignment with reduced tilt sensitivity |
| US20050173656A1 (en) * | 2004-02-06 | 2005-08-11 | Kaim Robert E. | Radial scan arm and collimator for serial processing of semiconductor wafers with ribbon beams |
| CN1961401A (en) * | 2004-04-05 | 2007-05-09 | 艾克塞利斯技术公司 | Reciprocating drive for scanning a workpiece through an ion beam |
| CN101015033A (en) * | 2004-07-07 | 2007-08-08 | 艾克塞利斯技术公司 | Device and method for measurement of beam angle and divergence normal to plane of scanned beam or ribbon beam |
| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| CN103165373A (en) * | 2011-12-19 | 2013-06-19 | 斯伊恩股份有限公司 | Ion implantation method and ion implantation apparatus |
| CN203434124U (en) * | 2013-08-20 | 2014-02-12 | 中芯国际集成电路制造(北京)有限公司 | Ion beam measurement guiding device used for ion implanter |
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