CN110075431A - A kind of focusing ultrasound-driven circuit - Google Patents
A kind of focusing ultrasound-driven circuit Download PDFInfo
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- CN110075431A CN110075431A CN201910506475.0A CN201910506475A CN110075431A CN 110075431 A CN110075431 A CN 110075431A CN 201910506475 A CN201910506475 A CN 201910506475A CN 110075431 A CN110075431 A CN 110075431A
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- focusing ultrasound
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N7/00—Ultrasound therapy
- A61N7/02—Localised ultrasound hyperthermia
Abstract
This application provides a kind of focusing ultrasound-driven circuits, are related to ultrasonic medical field.The focusing ultrasound-driven circuit includes multiple switch group and energy converter, each switching group is electrically connected with energy converter, and each switching group is all connected to different power supplys, power supply includes different positive voltage source and negative supply, and each positive voltage source is equal with the absolute value of a negative supply, each switching group includes multiple switch, wherein, when under focusing ultrasound-driven circuit is in running order, a switch in multiple switch is periodically connected in multiple switch group in order, it controls other switches simultaneously to disconnect, so that energy converter works by sine-wave excitation.Focusing ultrasound-driven circuit provided by the present application has the effect of the overall performance for being able to ascend energy converter.
Description
Technical field
This application involves ultrasonic medical fields, in particular to a kind of focusing ultrasound-driven circuit.
Background technique
Ultrasonic wave refers to the sound wave that vibrates in the frequency for being more than human hearing range, from 20 kilo hertzs to several Gigahertzs,
Ultrasound is used widely in various applications.
One of application of ultrasonic wave is high intensity focused ultrasound (HIFU), it is used for lasting energy warms and destruction
Impaired or disease tissue.The program carries out together with image forming program, to be accurately positioned the tissue for needing to cut off.
However, the signal that traditional focusing ultrasound-driven circuit generates is not sine wave so that the performance of energy converter by
It influences.
Summary of the invention
The application's is designed to provide a kind of focusing ultrasound-driven circuit, is driven with solving focusing ultrasound in the prior art
The problem of signal that dynamic circuit issues is not sine wave, influences transducer performance.
Existing above-mentioned purpose, the embodiment of the present application the technical solution adopted is as follows:
The embodiment of the invention provides a kind of focusing ultrasound-driven circuit, the focusing ultrasound-driven circuit includes multiple opens
Guan Zuyu energy converter, each switching group are electrically connected with the energy converter, and each switching group is all connected to difference
Power supply, the power supply includes different positive voltage source and negative supply, and each positive voltage source is described negative with one
The absolute value of voltage source is equal, and each switching group includes multiple switch, wherein
When under the focusing ultrasound-driven circuit is in running order, the multiple switching group is periodically led in order
A switch in logical multiple switch, while controlling other switches and disconnecting, so that the energy converter works by sine-wave excitation.
Further, the multiple switching group includes at least first switch group, second switch group and third switching group, institute
First switch group, the second switch group and the third switching group is stated to connect with one end of the energy converter, it is described to change
The other end ground connection of energy device.
Further, the first switch group includes the first metal-oxide-semiconductor and the second metal-oxide-semiconductor, and the second switch group includes the
Three metal-oxide-semiconductors and the 4th metal-oxide-semiconductor, the third switching group include the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor, first metal-oxide-semiconductor, described
Second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the drain electrode of the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor are equal
It is electrically connected with one end of the energy converter, the source electrode and the first power electric connection of first metal-oxide-semiconductor, second metal-oxide-semiconductor
Source electrode is electrically connected with second source, the source electrode and third power electric connection of the third metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor
With the 4th power electric connection, the source grounding of the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor, wherein first power supply with
The third power supply is positive voltage source, and the second source and the 4th power supply are negative supply, and first electricity
Source is equal with the absolute value of the second source, and the third power supply is equal with the absolute value of the 4th power supply.
Further, the first switch group, the second switch group and the third switching group include protection electricity
Resistance, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and
At least one described protective resistance is concatenated between the source electrode and grid of 6th metal-oxide-semiconductor.
Further, the first switch group, the second switch group and the third switching group include Zener two
Pole pipe, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor with
And at least one described Zener diode is concatenated between the source electrode and grid of the 6th metal-oxide-semiconductor.
Further, the first switch group, the second switch group and the third switching group include protection two
Pole pipe, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor with
And protection diode described in minimum of one is concatenated between the drain electrode and the energy converter of the 6th metal-oxide-semiconductor.
Further, the focusing ultrasound-driven circuit further includes multiple capacitors, and each switching group is at least with one
A capacitor series connection.
Further, the focusing ultrasound-driven circuit further includes multiple current-limiting resistances, and each switching group is at least
It connects with a current-limiting resistance.
Further, the focusing ultrasound-driven circuit further includes multiple gate drivers, and each switching group is at least
It connects with a gate driver.
Further, the focusing ultrasound-driven circuit further includes multiple optoisolators, and each switching group is at least
It connects with an optoisolator.
Compared with the existing technology, the application have the utility model has the advantages that
This application provides a kind of focusing ultrasounds
The embodiment of the present application provides a kind of focusing ultrasound-driven circuit, which includes multiple open
Guan Zuyu energy converter, each switching group are electrically connected with energy converter, and each switching group is all connected to different power supplys, power supply packet
Different positive voltage source and negative supply are included, and each positive voltage source is equal with the absolute value of a negative supply, Mei Gekai
Guan Zujun includes multiple switch, wherein when under focusing ultrasound-driven circuit is in running order, multiple switch group is periodic
A switch in multiple switch is connected in order, while controlling other switches and disconnecting, so that energy converter presses sine-wave excitation work
Make.Since the application uses the form of multiple switch group to transducer excitation, also, switching group is connected to different power supplys, together
When switching group one in multiple switch switch can periodically be connected in order, so as to periodically give energy converter not
Same excitation, so that energy converter works.Meanwhile although each switching group is still the form of low and high level to the excitation of energy converter,
However due in such a way that each positive voltage source is equal with the absolute value of a negative supply, so that according to certain sequence
When to transducer excitation, whole excitation waveform shape is capable of forming sine-wave excitation.And influence the master of energy converter work
Wanting factor is transmission power and waveform shape, therefore the sine-wave excitation generated by switching group not only will not be to energy converter entirety
Performance has an impact, and is able to ascend the overall performance of energy converter.
To enable the above objects, features, and advantages of the application to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
Technical solution in ord to more clearly illustrate embodiments of the present application, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only some embodiments of the application, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the module diagram provided by the embodiments of the present application for focusing ultrasound-driven circuit.
Fig. 2 is the excitation waveform figure provided by the embodiments of the present application for focusing ultrasound-driven circuit.
Fig. 3 is the circuit diagram provided by the embodiments of the present application for focusing ultrasound-driven circuit.
In figure: 100- focuses ultrasound-driven circuit；110- switching group；111- first switch group；The first metal-oxide-semiconductor of 1111-；
The second metal-oxide-semiconductor of 1112-；1113- protective resistance；1114- Zener diode；1115- protection diode；112- second switch group；
1121- third metal-oxide-semiconductor；The 4th metal-oxide-semiconductor of 1122-；113- third switching group；The 5th metal-oxide-semiconductor of 1131-；The 6th metal-oxide-semiconductor of 1132-；
120- energy converter；130- capacitor；140- current-limiting resistance；150- gate driver；160- optoisolator；170- match circuit.
Specific embodiment
To keep the purposes, technical schemes and advantages of the embodiment of the present application clearer, below in conjunction with the embodiment of the present application
In attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is
Some embodiments of the present application, instead of all the embodiments.The application being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiments herein provided in the accompanying drawings is not intended to limit below claimed
Scope of the present application, but be merely representative of the selected embodiment of the application.Based on the embodiment in the application, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model of the application protection
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.Meanwhile the application's
In description, term " first ", " second " etc. are only used for distinguishing description, are not understood to indicate or imply relative importance.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
In the description of the present application, it should be noted that the orientation or position of the instructions such as term " on ", "lower", "inner", "outside"
Set relationship be based on the orientation or positional relationship shown in the drawings or this application product using when the orientation or position usually put
Relationship is set, description the application is merely for convenience of and simplifies description, rather than the device or element of indication or suggestion meaning are necessary
It with specific orientation, is constructed and operated in a specific orientation, therefore should not be understood as the limitation to the application.
In the description of the present application, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be
Mechanical connection, is also possible to be electrically connected；It can be directly connected, two can also be can be indirectly connected through an intermediary
Connection inside element.For the ordinary skill in the art, above-mentioned term can be understood in the application with concrete condition
In concrete meaning.
With reference to the accompanying drawing, it elaborates to some embodiments of the application.In the absence of conflict, following
Feature in embodiment and embodiment can be combined with each other.
The embodiment of the invention provides a kind of focusing ultrasound-driven circuit, by when energy converter can be according to sine wave in a manner of
It works, promotes the performance of energy converter.
Specifically, referring to Fig. 1, the focusing ultrasound-driven circuit 100 includes multiple switch group 110 and energy converter 120, often
A switching group 110 is electrically connected with energy converter 120, and each switching group 110 is all connected to different power supplys, meanwhile, power supply packet
Different positive voltage source and negative supply are included, and each positive voltage source is equal with the absolute value of a negative supply, Mei Gekai
Guan Zujun includes multiple switch, and when under focusing ultrasound-driven circuit is in running order, the multiple switching group is periodic
A switch in multiple switch is connected in order, while controlling other switches and disconnecting, so that the energy converter is swashed by sine wave
Encourage work.
It should be noted that referring to Fig. 2, sine-wave excitation described in embodiment, is substantially the rank of varying level composition
The signal of ladder type, the entirety of the signal is in the form of sine wave.It is transmitting function due to influencing the principal element that energy converter 120 works
Rate and waveform shape, therefore 120 overall performance of energy converter will not only be generated by the sine-wave excitation that switching group 110 generates
It influences, and is able to ascend the overall performance of energy converter 120.
In such a way that multiple switching groups is set, difference can be controlled in different time sections and closed the switch, thus to changing
Energy device excitation, since each switching group is all connected to different power supplys, and power supply is divided into positive supply and negative supply, therefore is focusing
When ultrasound-driven circuit 100 works, by a switch conduction in control switch in sequence, while controlling other switches and closing
The mode of conjunction can make the excitation of energy converter that staged be presented, so that the form of pumping signal entirety sine wave, promotion are changed
The overall performance of energy device.Specifically, referring to Fig. 3, in the present embodiment, multiple switching group 110 includes at least first switch
Group 111, second switch group 112 and third switching group 113, first switch group 111, second switch group 112 and third switch
Group 113 is connect with one end of energy converter 120, the other end ground connection of energy converter 120.Pass through three 110 timings of switching group
Conducting and shutdown, can be realized to energy converter 120 with the excitation of sine wave.Wherein, the conducting of timing described in the present embodiment
With shutdown, refer to the periodically conducting and shutdown in a certain order of switching group 110.
Further, first switch group 111 includes the first metal-oxide-semiconductor 1111 and the second metal-oxide-semiconductor 1112, second switch group 112
Including third metal-oxide-semiconductor 1121 and the 4th metal-oxide-semiconductor 1122, third switching group 113 includes the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor
1132, the first metal-oxide-semiconductor 1111, the second metal-oxide-semiconductor 1112, third metal-oxide-semiconductor 1121, the 4th metal-oxide-semiconductor 1122, the 5th metal-oxide-semiconductor 1131 with
And the 6th the drain electrode of metal-oxide-semiconductor 1132 be electrically connected with one end of energy converter 120, the source electrode and the first power supply of the first metal-oxide-semiconductor 1111
Electrical connection, the source electrode of the second metal-oxide-semiconductor 1112 are electrically connected with second source, and source electrode and the third power supply of third metal-oxide-semiconductor 1121 are electrically connected
It connects, the source electrode and the 4th power electric connection of the 4th metal-oxide-semiconductor 1122, the source electrode of the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor 1132 connect
Ground, wherein the first power supply and third power supply are positive voltage source, and second source and the 4th power supply are negative supply, and first
Power supply is equal with the absolute value of second source, and third power supply is equal with the absolute value of the 4th power supply.
For example, the voltage value of the first power supply is V1, the voltage value of second source is-V1, and the voltage value of third power supply is V2,
The voltage value of 4th power supply is-V2, the first metal-oxide-semiconductor 1111, the second metal-oxide-semiconductor 1112, third metal-oxide-semiconductor 1121, the 4th metal-oxide-semiconductor
1122, the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor 1132 are connected and disconnect according to timing, can make being excited into for energy converter 120
The form of sine wave.
For example, the 5th metal-oxide-semiconductor 1131 within the first moment is connected, the cut-off of remaining metal-oxide-semiconductor, then energy converter 120 is not at this time
Work；Within the second moment, the conducting of the first metal-oxide-semiconductor 1111, the cut-off of remaining metal-oxide-semiconductor, then energy converter 120 swashs according to V1 voltage at this time
Encourage work；At the third moment, third metal-oxide-semiconductor 1121 is connected, and the cut-off of remaining metal-oxide-semiconductor, then energy converter 120 swashs according to V2 voltage at this time
Encourage work；At the 4th moment, the conducting of the first metal-oxide-semiconductor 1111, the cut-off of remaining metal-oxide-semiconductor, then energy converter 120 swashs according to V1 voltage at this time
Encourage work；At the third moment, and so on.Also, the time interval between the every two moment is 8.3ns.
I.e. more level excitation waveforms can be generated by the metal-oxide-semiconductor arranged in a specific way, to provide to energy converter 120
High power (about 200W).The modern metal-oxide-semiconductor that can be used for applications of ultrasound is being carried out studies have shown that when needing high frequency (1-2MHz) to open
When OFF signal, grid charge (QG) is a key parameter.It is longer that the door bigger metal-oxide-semiconductor of charge opens or closes the required time, opens
Closing loss just will increase.In order to design reliable product, it is necessary to consider the maximum voltage (V between drain electrode and power supplyDS), electric leakage
Flow (ID) and conducting resistance (ON).
In order to reduce in state resistance and better heat distribution, the first metal-oxide-semiconductor 1111 provided in this embodiment, third metal-oxide-semiconductor
1121 and the 5th metal-oxide-semiconductor 1131 be all made of P-channel depletion type MOS tube, the second metal-oxide-semiconductor 1112, the 4th metal-oxide-semiconductor 1122 and
Liu's metal-oxide-semiconductor is all made of N-channel depletion type MOS tube.All metal-oxide-semiconductors are connected by the way of in parallel.In the present embodiment, N-channel
The model IRFH5215MOSFET of depletion type MOS tube, the model Si7315DN MOSFET of P-channel depletion type MOS tube.
Further, in order to play the role of protect metal-oxide-semiconductor, first switch group 111, second switch group 112 and third
Switching group 113 includes protective resistance 1113, the first metal-oxide-semiconductor 1111, the second metal-oxide-semiconductor 1112, third metal-oxide-semiconductor 1121, the 4th MOS
At least one protective resistance is concatenated between the source electrode and grid of pipe 1122, the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor 1132
1113.By the way that protective resistance 1113 is arranged, it can guarantee that metal-oxide-semiconductor is in close state when no application controls signal.
Simultaneously as further include inductance component in focusing ultrasound-driven circuit 100, therefore in practical applications, it may
Situations such as will appear point spike (i.e. surge), in view of this, the first switch group 111, second provided in the embodiment of the present invention
Switching group 112 and third switching group 113 include Zener diode 1114, wherein the first metal-oxide-semiconductor 1111, the second metal-oxide-semiconductor
1112, the source electrode and grid of third metal-oxide-semiconductor 1121, the 4th metal-oxide-semiconductor 1122, the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor 1132 it
Between concatenate at least one Zener diode 1114.Also, the cathode of each Zener diode 1114 and the source electrode of metal-oxide-semiconductor are electrically connected
It connects, anode is electrically connected with the grid of metal-oxide-semiconductor.
Also, the breakdown voltage of Zener diode 1114 provided in this embodiment is 12V, to guarantee the gate terminal of metal-oxide-semiconductor
Son is not influenced by point due to voltage spikes.
Further, in order to achieve the effect that circuit protection, first switch group 111, second switch group 112 and third are opened
Pass group 113 includes protection diode 1115, the first metal-oxide-semiconductor 1111, the second metal-oxide-semiconductor 1112, third metal-oxide-semiconductor 1121, the 4th MOS
Minimum of one protection is concatenated between the drain electrode and energy converter 120 of pipe 1122, the 5th metal-oxide-semiconductor 1131 and the 6th metal-oxide-semiconductor 1132
Diode 1115.
Wherein, for the first metal-oxide-semiconductor 1111, third metal-oxide-semiconductor 1121 and the 5th metal-oxide-semiconductor 1131, protection diode
1115 anode is electrically connected with the drain electrode of metal-oxide-semiconductor, and cathode is electrically connected with energy converter 120；For the second metal-oxide-semiconductor the 1112, the 4th 2
For pole pipe and the 6th diode, the cathode of protection diode 1115 with the drain electrode of metal-oxide-semiconductor be electrically connected, anode and energy converter
120 electrical connections.
In order to eliminate the DC component in control signal, focusing ultrasound-driven circuit 100 further includes multiple capacitors 130, often
A switching group 110 is at least connected with a capacitor 130.By taking the embodiment of the present application as an example, the quantity of capacitor 130 is six, and
The grid of each metal-oxide-semiconductor is electrically connected with a capacitor 130, to reach the DC component purpose eliminated in control signal.
Meanwhile in order to limit grid current, while overheating of drivers is prevented, it further includes more for focusing ultrasound-driven circuit 100
A current-limiting resistance 140, each switching group 110 are at least connected with a current-limiting resistance 140.Wherein, limit provided in this embodiment
The quantity of leakage resistance 140 is also six, and the grid of each metal-oxide-semiconductor is electrically connected with a current-limiting resistance 140.
Meanwhile the use of resistance cannot interfere the normally of metal-oxide-semiconductor, therefore current-limiting resistance provided by the present application 140
Resistance value is 1 Ω, can either have the function that current limliting, while will not influence the normal use of metal-oxide-semiconductor.
Further, focusing ultrasound-driven circuit 100 further includes multiple gate drivers 150 and multiple optoisolators 160, often
A switching group 110 is at least connected with a gate driver 150 and at least one optoisolator 160.Wherein, gate driver 150
High pressure exposure occurs for driving the conducting and disconnection of metal-oxide-semiconductor, when optoisolator 160 is for preventing the system failure.
Of course, as another implementation of the present embodiment, the different switches of each switching group 110 also be can connect
In the different port of gate driver 150, it is turned on or off to realize and control same metal-oxide-semiconductor by a gate driver 150.
Further, in order to make the power of driver be transmitted to energy converter 120 in maximum efficiency, in the present embodiment, gather
Burnt ultrasound-driven circuit 100 further includes match circuit 170, wherein match circuit 170 is connected to multiple switch group 110 and transducing
It between device 120, and can be matched with the parameter of energy converter, so that reaching transmits the power of driver in maximum efficiency
To the effect of energy converter 120.Wherein, match circuit 170 described in the present embodiment includes but is not limited to lc circuit, pi-network.
In conclusion the embodiment of the present application provides a kind of focusing ultrasound-driven circuit, the focusing ultrasound-driven circuit
Including multiple switch group and energy converter, each switching group is electrically connected with energy converter, and each switching group be all connected to it is different
Power supply, power supply include different positive voltage source and negative supply, and each positive absolute value of the voltage source with a negative supply
Equal, each switching group includes multiple switch, wherein when under focusing ultrasound-driven circuit is in running order, Duo Gekai
A switch in multiple switch is periodically connected in pass group in order, while controlling other switches and disconnecting, so that energy converter is pressed
Sine-wave excitation work.Since the application uses the form of multiple switch group to transducer excitation, also, switching group is connected to not
Same power supply, a switch in multiple switch can be periodically connected in Simultaneous Switching group in order, so as to periodicity
Give energy converter different excitations so that energy converter works.Meanwhile although each switching group to the excitation of energy converter be still height
The form of level, however due in such a way that each positive voltage source is equal with the absolute value of a negative supply, so that
When according to certain sequence to transducer excitation, whole excitation waveform shape is capable of forming sine-wave excitation.And it influences to change
The principal element of energy device work is transmission power and waveform shape, therefore not only will not by the sine-wave excitation that switching group generates
Energy converter overall performance is had an impact, and is able to ascend the overall performance of energy converter.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
It is obvious to a person skilled in the art that the application is not limited to the details of above-mentioned exemplary embodiment, Er Qie
In the case where without departing substantially from spirit herein or essential characteristic, the application can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and scope of the present application is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included in the application.Any reference signs in the claims should not be construed as limiting the involved claims.
Claims (10)
1. a kind of focusing ultrasound-driven circuit, which is characterized in that the focusing ultrasound-driven circuit includes multiple switch group and change
Energy device, each switching group is electrically connected with the energy converter, and each switching group is all connected to different power supplys, institute
Stating power supply includes different positive voltage source and negative supply, and each positive voltage source is exhausted with negative supply
Equal to being worth, each switching group includes multiple switch, wherein
When under the focusing ultrasound-driven circuit is in running order, the multiple switching group is periodically connected more in order
A switch in a switch, while controlling other switches and disconnecting, so that the energy converter works by sine-wave excitation.
2. focusing ultrasound-driven circuit as described in claim 1, which is characterized in that the multiple switching group includes at least first
Switching group, second switch group and third switching group, the first switch group, the second switch group and third switch
Group is connect with one end of the energy converter, the other end ground connection of the energy converter.
3. focusing ultrasound-driven circuit as claimed in claim 2, which is characterized in that the first switch group includes the first MOS
Pipe and the second metal-oxide-semiconductor, the second switch group include third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, and the third switching group includes the 5th
Metal-oxide-semiconductor and the 6th metal-oxide-semiconductor, it is first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, described
The drain electrode of 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor is electrically connected with one end of the energy converter, the source of first metal-oxide-semiconductor
Pole and the first power electric connection, the source electrode of second metal-oxide-semiconductor are electrically connected with second source, the source electrode of the third metal-oxide-semiconductor and
Third power electric connection, the source electrode and the 4th power electric connection of the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th MOS
The source grounding of pipe, wherein first power supply and the third power supply are positive voltage source, the second source with it is described
4th power supply is negative supply, and first power supply is equal with the absolute value of the second source, the third power supply with
The absolute value of 4th power supply is equal.
4. focusing ultrasound-driven circuit as claimed in claim 3, which is characterized in that the first switch group, described second open
Pass group and the third switching group include protective resistance, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd MOS
At least one is concatenated between the source electrode and grid of pipe, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor
The protective resistance.
5. focusing ultrasound-driven circuit as claimed in claim 3, which is characterized in that the first switch group, described second open
Pass group and the third switching group include Zener diode, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third
Metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor source electrode and grid between concatenate at least
One Zener diode.
6. focusing ultrasound-driven circuit as claimed in claim 3, which is characterized in that the first switch group, described second open
Pass group and the third switching group include protection diode, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the third
Metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor drain electrode and the energy converter between go here and there
Connect protection diode described in minimum of one.
7. focusing ultrasound-driven circuit as described in claim 1, which is characterized in that the focusing ultrasound-driven circuit further includes
Multiple capacitors, each switching group are at least connected with a capacitor.
8. focusing ultrasound-driven circuit as described in claim 1, which is characterized in that the focusing ultrasound-driven circuit further includes
Multiple current-limiting resistances, each switching group are at least connected with a current-limiting resistance.
9. focusing ultrasound-driven circuit as described in claim 1, which is characterized in that the focusing ultrasound-driven circuit further includes
Multiple gate drivers, each switching group are at least connected with a gate driver.
10. focusing ultrasound-driven circuit as described in claim 1, which is characterized in that the focusing ultrasound-driven circuit also wraps
Multiple optoisolators are included, each switching group is at least connected with an optoisolator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910506475.0A CN110075431A (en) | 2019-06-12 | 2019-06-12 | A kind of focusing ultrasound-driven circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910506475.0A CN110075431A (en) | 2019-06-12 | 2019-06-12 | A kind of focusing ultrasound-driven circuit |
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| CN110075431A true CN110075431A (en) | 2019-08-02 |
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| CN201910506475.0A Pending CN110075431A (en) | 2019-06-12 | 2019-06-12 | A kind of focusing ultrasound-driven circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5026387A (en) * | 1990-03-12 | 1991-06-25 | Ultracision Inc. | Method and apparatus for ultrasonic surgical cutting and hemostatis |
| US5681995A (en) * | 1995-03-17 | 1997-10-28 | Hitachi, Ltd. | Ultrasonic flaw detecting apparatus for inspecting multi-layer structure and method thereof |
| JPH1156839A (en) * | 1997-08-14 | 1999-03-02 | Ge Yokogawa Medical Syst Ltd | Ultrasonic wave emitting pulse generating circuit and ultrasonic diagnostic system |
| CN106730426A (en) * | 2015-11-23 | 2017-05-31 | 南京广慈医疗科技有限公司 | A kind of phased array high intensity focused ultrasound drive circuit |
| CN107070229A (en) * | 2016-12-20 | 2017-08-18 | 南京海普水文科技有限公司 | A kind of ADCP transmitting source levels conditioned circuit and method |
-
2019
- 2019-06-12 CN CN201910506475.0A patent/CN110075431A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5026387A (en) * | 1990-03-12 | 1991-06-25 | Ultracision Inc. | Method and apparatus for ultrasonic surgical cutting and hemostatis |
| US5681995A (en) * | 1995-03-17 | 1997-10-28 | Hitachi, Ltd. | Ultrasonic flaw detecting apparatus for inspecting multi-layer structure and method thereof |
| JPH1156839A (en) * | 1997-08-14 | 1999-03-02 | Ge Yokogawa Medical Syst Ltd | Ultrasonic wave emitting pulse generating circuit and ultrasonic diagnostic system |
| CN106730426A (en) * | 2015-11-23 | 2017-05-31 | 南京广慈医疗科技有限公司 | A kind of phased array high intensity focused ultrasound drive circuit |
| CN107070229A (en) * | 2016-12-20 | 2017-08-18 | 南京海普水文科技有限公司 | A kind of ADCP transmitting source levels conditioned circuit and method |
Non-Patent Citations (1)
| Title |
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| 浦昭邦 等: "《普通高等教育测控信息技术规划教材光电测试技术》", 31 December 2005 * |
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