CN110071352B - Full magnetic wall triangle filter - Google Patents
Full magnetic wall triangle filter Download PDFInfo
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- CN110071352B CN110071352B CN201910354662.1A CN201910354662A CN110071352B CN 110071352 B CN110071352 B CN 110071352B CN 201910354662 A CN201910354662 A CN 201910354662A CN 110071352 B CN110071352 B CN 110071352B
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- triangular
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- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000011888 foil Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 230000001629 suppression Effects 0.000 abstract description 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000006880 cross-coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
Abstract
The invention discloses a full magnetic wall triangular filter, which comprises a top layer metal foil, a medium substrate II, a prepreg, a middle metal foil, a medium substrate I and a bottom metal foil which are sequentially arranged from top to bottom, wherein the two layers of medium substrates are tightly bonded through the prepreg, the medium substrate I is provided with a triangular resonance patch unit and a coupling and feeding structure, and a dual-passband full magnetic wall right-angled triangular resonant cavity three-order filter is designed by utilizing a full magnetic wall right-angled triangular resonant cavity. The filter has the advantages of small volume, light weight, small insertion loss in a pass band, high return loss, high suppression between dual pass bands and the like, and the resonance units have small size and compact structure, and greatly reduce the plane size of the filter.
Description
Technical Field
The invention relates to wireless communication equipment, in particular to a full magnetic wall triangular filter.
Background
In recent years, with the rapid development of wireless communication technology, more and more projects are related to microwave communication, and filters are indispensable components of modern microwave relay communication, microwave satellite communication, electronic countermeasure and other systems, and are also the most important microwave passive devices with the highest technical content. However, with the development of modern electronic technologies, miniaturization and multi-functionalization of communication terminals have become a trend. In this trend, a filter is required to have high performance and characteristics such as miniaturization and multi-pass band.
In recent years, the SIW filter has been well studied and developed. More double-passband filters are researched and applied, but the size needs to be further reduced, and the performance needs to be further improved.
Disclosure of Invention
The invention aims to provide a full magnetic wall triangular filter.
The purpose of the invention is realized by the following technical scheme:
the full magnetic wall triangular filter comprises a top layer metal foil, a second medium substrate, a prepreg, a middle metal foil, a first medium substrate and a bottom metal foil which are sequentially arranged from top to bottom, wherein the two medium substrates are tightly bonded through the prepreg, and a triangular resonant patch unit, a coupling structure and a feed structure are arranged on the first medium substrate.
According to the technical scheme provided by the invention, the full magnetic wall triangular filter provided by the embodiment of the invention has the advantages of small volume, light weight, small insertion loss in a pass band, high return loss, high dual-pass band rejection and the like, and the transmission performance of the dual-pass band filter is improved.
Drawings
Fig. 1 is a schematic diagram of a laminated structure of a full magnetic wall triangular filter according to an embodiment of the present invention.
FIG. 2 is a top view of a filter body structure on a first dielectric substrate in accordance with an embodiment of the present invention
FIG. 3 is a comparison graph of actual measurement and simulation according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a method for adjusting a feeding position according to an embodiment of the present invention.
Fig. 5 is a diagram of simulation results after adjusting the feeding position according to the embodiment of the present invention.
Fig. 6 is a diagram of another simulation result after adjusting the feeding position according to the embodiment of the present invention.
In the figure:
1. the structure comprises a top metal foil 2, medium substrates II and 3, a prepreg 4, a middle metal foil 5, medium substrates I and 6, a bottom metal foil 7 and blind holes.
Detailed Description
The embodiments of the present invention will be described in further detail below. Details which are not described in detail in the embodiments of the invention belong to the prior art which is known to the person skilled in the art.
The preferred embodiments of the full magnetic wall triangular filter of the present invention are:
the dielectric patch comprises a top layer metal foil, a dielectric substrate II, a prepreg, a middle metal foil, a dielectric substrate I and a bottom metal foil which are sequentially arranged from top to bottom, wherein the two layers of dielectric substrates are tightly bonded through the prepreg, and a triangular resonant patch unit, a coupling structure and a feed structure are arranged on the dielectric substrate I.
The triangular resonant patch unit is provided with a plurality of resonant units, the resonant units are separated by metal through holes, and the metal through holes are connected with the top layer metal foil and the bottom layer metal foil.
The plurality of resonance units comprise a first resonance unit, a second resonance unit and a third resonance unit, three blind holes are formed in the first resonance unit and the third resonance unit respectively, two blind holes are formed in the second resonance unit, the blind holes are punched through the first layer of dielectric substrate, and the triangular resonance patch unit is connected with the bottom metal foil.
The first resonance unit and the second resonance unit and the third resonance unit are connected through rectangular patches respectively, and the first resonance unit and the third resonance unit are connected through square patches.
The first resonance unit and the third resonance unit are connected with the feed structure through microstrip outgoing lines, and the middle metal foil is grooved by the microstrip outgoing lines to expose part of the microstrip outgoing lines.
The full magnetic wall triangular filter utilizes a full magnetic wall right-angled triangular resonant cavity, and a three-order miniaturized dual-passband filter with cross coupling performance is designed, and is a dual-passband full magnetic wall right-angled triangular resonant cavity three-order filter. The dual-passband filter has the advantages of small volume, light weight, low insertion loss in a passband, high return loss, high suppression between dual-passband, and the like, and improves the transmission performance of the dual-passband filter.
The full magnetic wall triangular filter has a cross coupling structure, forms a transmission zero point between two pass bands, and greatly improves the inhibition between the pass bands of the dual-pass band filter. In addition, the size of the resonance unit used by the filter is small, the structure among the resonance units is compact, and the plane size of the filter is greatly reduced.
The specific embodiment is as follows:
the following further describes embodiments of the present invention with reference to fig. 1 to 3:
referring to fig. 1, the third-order all-magnetic-wall triangular resonant cavity dual-passband filter provided in this embodiment is composed of six layers of structures, and includes a top metal foil, a second dielectric substrate, a prepreg, a middle metal foil, a first dielectric substrate, and a bottom metal foil, which are tightly attached from top to bottom. The top metal foil, the middle metal foil and the bottom metal foil are made of copper foils, the first dielectric substrate and the second dielectric substrate are made of RO43 4350B and have a relative dielectric constant of 3.66, and the prepreg is made of RO4450F and has a relative dielectric constant of 3.66.
Referring to fig. 1, the plane size of the second dielectric substrate and the plane size of the prepreg are smaller than those of the first dielectric substrate and the bottom metal foil, which are used for exposing the microstrip outgoing line of the middle metal foil. The size of the top metal foil plane is slightly smaller than that of the medium substrate II and the prepreg, so that the top metal foil is prevented from contacting with the microstrip lead-out wire of the middle metal foil during processing and laminating.
Referring to fig. 2, the middle metal foil is a filter main body structure and is composed of three right-angled triangular resonant patches, two microstrip outgoing lines, two rectangular coupling patches and a square coupling patch. The middle metal foil is surrounded by the through holes to form an electric wall and inhibit electromagnetic radiation of the patch. The through hole penetrates through the first dielectric substrate, the prepreg and the second dielectric substrate to connect the top metal foil and the bottom metal foil. Three blind holes are formed below the upper left right-angled triangular resonance patch and the lower right-angled triangular resonance patch, two blind holes are formed below the upper right-angled triangular resonance patch, and the blind holes penetrate through the first dielectric substrate to connect the middle metal foil and the bottom metal foil. The middle metal foil main body is covered by a prepreg, a medium substrate II and a top metal foil, two sections of 50 ohm microstrip outgoing lines are exposed at the upper left and the lower right, and the two sections of microstrip outgoing lines are both welded with SMA joints so as to be connected to a test or a circuit.
In this example, the resonant mode (LC mode) formed by the triangular resonant patch and the blind via constitutes the first pass band during design. The blind holes are distributed on the symmetry line of each triangular resonance patch, and the position, the number and the aperture size of the blind holes all influence the resonance frequency, namely the position of the first pass band. The upper left and right lower resonance units are connected by a square small patch, the upper left and right and upper right and lower right resonance units are connected by a rectangular patch, the size of the square small patch and the width of the rectangular patch have influence on the coupling of the LC mode, they provide negative coupling coefficients, and a transmission zero point is provided on the right side of the first pass band.
First resonant mode (TM) of the right triangle patch itself100 Z) Constituting a second pass band. The size, width and connecting position of the square patch and the rectangular patch which are connected with each resonance unit are opposite to TM100 ZThe modes have an effect on their coupling, they provide a positive coupling coefficient and a transmission zero on the left side of the second pass band. The bottom corner edge of the right-upper right-angled triangle patch can be subjected to corner cutting, and the size of the corner cutting can be opposite to that of the TM100 ZThe resonant frequency of the mode has a large effect with little effect on the resonant frequency of the LC mode. The right-angled triangle resonance patches at the upper left and the lower right have partial chamfer processing modes, which are limited by the processing technology, and the chamfer has little influence on the frequency of each mode when the chamfer is very small.
Referring to fig. 2, the length of lQ, which is the portion of the second dielectric substrate that does not cover the first dielectric substrate, has an effect on the Q value of the filter as a whole, but needs to be more than 3mm due to process limitations.
Referring to fig. 2, the position of the microstrip lead-out line has a relatively large influence on the pass band, and the position of its feed largely determines the TM100 ZThe mode is excited but its effect on the LC mode is small. The distribution of the pass band can be changed or the performance can be improved by modifying the feeding position.
Referring to fig. 4, the slot structure can be used to adjust the position of the feed extending into the triangular patch resonator element to determine whether to excite TM100 ZMode, or the inherent second mode TM which further suppresses the full wall rectangular triangular cavity110 Z. FIG. 5 shows TM after adjustment of the feed potential100 ZThe mode is suppressed and the second passband disappears. FIG. 6 shows that after adjusting the feed potential, TM is further suppressed110 ZMode, simulation result that improves high frequency performance.
A solid three-cavity full-magnetic-wall triangular filter is manufactured, and the solid full-magnetic-wall triangular filter is tested by using a network analyzer. Test results referring to fig. 3, the first pass band is between 3.511GHz to 4.248GHz, the insertion loss is 1.21dB, and the return loss is greater than 15 dB. The second pass band is 6.31GHz to 6.915GHz, the insertion loss is 1.64dB, and the return loss is more than 18 dB. There are two transmission zeros between the passbands, at 5.6GHz and 6.092GHz, respectively.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (2)
1. A full magnetic wall triangular filter is characterized by comprising a top layer metal foil, a medium substrate II, a prepreg, a middle metal foil, a medium substrate I and a bottom metal foil which are sequentially arranged from top to bottom, wherein the two layers of medium substrates are tightly bonded through the prepreg;
the triangular resonant patch unit is provided with a plurality of resonant units, the resonant units are separated by metal through holes, and the metal through holes are connected with the top layer metal foil and the bottom layer metal foil;
the plurality of resonant units comprise a first resonant unit, a second resonant unit and a third resonant unit, three blind holes are respectively arranged in the first resonant unit and the third resonant unit, two blind holes are arranged in the second resonant unit, and the blind holes penetrate through the first dielectric substrate and are connected with the middle metal foil and the bottom metal foil;
the first resonance unit and the second resonance unit and the third resonance unit are respectively connected through rectangular patches, and the first resonance unit and the third resonance unit are connected through square patches;
the first resonance unit and the third resonance unit are connected with the feed structure through microstrip outgoing lines.
2. The all-magnetic-wall triangular filter according to claim 1, wherein the microstrip lead-out line portion is formed by grooving the intermediate metal foil to expose a portion of the microstrip lead-out line.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910354662.1A CN110071352B (en) | 2019-04-29 | 2019-04-29 | Full magnetic wall triangle filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910354662.1A CN110071352B (en) | 2019-04-29 | 2019-04-29 | Full magnetic wall triangle filter |
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| CN110071352A CN110071352A (en) | 2019-07-30 |
| CN110071352B true CN110071352B (en) | 2020-12-25 |
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| CN112087218B (en) * | 2020-08-27 | 2023-11-17 | 中国科学技术大学 | Continuously adjustable double-band-stop filter based on surface acoustic wave resonator |
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|---|---|---|---|---|
| EP1376746A1 (en) * | 2002-06-27 | 2004-01-02 | Siemens Mobile Communications S.p.A. | Tuneless rectangular dielectric waveguide filter |
| CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
| WO2014148708A1 (en) * | 2013-03-22 | 2014-09-25 | 중앙대학교 산학협력단 | Substrate-integrated waveguide antenna |
| CN104319435A (en) * | 2014-10-20 | 2015-01-28 | 华南理工大学 | Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system |
| CN108987864A (en) * | 2018-06-11 | 2018-12-11 | 杭州电子科技大学 | Centre frequency and complete adjustable 1/8th moulds substrate integral wave guide filter of bandwidth |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100097392A (en) * | 2009-02-26 | 2010-09-03 | 광운대학교 산학협력단 | Spurious suppressed substrate integrated waveguide (siw) filter using stepped-impedance resonator (sir) structure |
| KR101621480B1 (en) * | 2014-10-16 | 2016-05-16 | 현대모비스 주식회사 | Transit structure of waveguide and dielectric waveguide |
| CN106099274A (en) * | 2016-05-27 | 2016-11-09 | 中国矿业大学 | A kind of slot-coupled compensates 1/8th mould substrate integral wave guide filters of fractal defect sturcture |
| CN108400411B (en) * | 2018-03-15 | 2019-12-31 | 南京邮电大学 | Integrated substrate waveguide band-pass filter based on triangular complementary split resonant ring |
| CN108682924B (en) * | 2018-05-29 | 2019-09-20 | 广东曼克维通信科技有限公司 | Substrate integral wave guide filter |
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2019
- 2019-04-29 CN CN201910354662.1A patent/CN110071352B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1376746A1 (en) * | 2002-06-27 | 2004-01-02 | Siemens Mobile Communications S.p.A. | Tuneless rectangular dielectric waveguide filter |
| WO2014148708A1 (en) * | 2013-03-22 | 2014-09-25 | 중앙대학교 산학협력단 | Substrate-integrated waveguide antenna |
| CN103531871A (en) * | 2013-10-29 | 2014-01-22 | 南通大学 | Substrate integrated waveguide differential band-pass filter |
| CN104319435A (en) * | 2014-10-20 | 2015-01-28 | 华南理工大学 | Substrate integrated waveguide band-pass filter applied onto WLAN (wireless local area network) system |
| CN108987864A (en) * | 2018-06-11 | 2018-12-11 | 杭州电子科技大学 | Centre frequency and complete adjustable 1/8th moulds substrate integral wave guide filter of bandwidth |
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| CN110071352A (en) | 2019-07-30 |
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Effective date of registration: 20240319 Address after: 230026 Jinzhai Road, Baohe District, Hefei, Anhui Province, No. 96 Patentee after: University of Science and Technology of China Country or region after: Zhong Guo Patentee after: Chen Chang Address before: 230026 Jinzhai Road, Baohe District, Hefei, Anhui Province, No. 96 Patentee before: University of Science and Technology of China Country or region before: Zhong Guo |