CN110071193A - A kind of binode stacked solar cell, cascade solar cell and preparation method thereof - Google Patents
A kind of binode stacked solar cell, cascade solar cell and preparation method thereof Download PDFInfo
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- CN110071193A CN110071193A CN201910392637.2A CN201910392637A CN110071193A CN 110071193 A CN110071193 A CN 110071193A CN 201910392637 A CN201910392637 A CN 201910392637A CN 110071193 A CN110071193 A CN 110071193A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- DEQZTKGFXNUBJL-UHFFFAOYSA-N n-(1,3-benzothiazol-2-ylsulfanyl)cyclohexanamine Chemical compound C1CCCCC1NSC1=NC2=CC=CC=C2S1 DEQZTKGFXNUBJL-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000010409 thin film Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 81
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 68
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 35
- 239000011787 zinc oxide Substances 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000005361 soda-lime glass Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 16
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 239000004615 ingredient Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- XBQLSSQTYJSTFT-UHFFFAOYSA-N [S].[Sn].[Ba].[Cu] Chemical compound [S].[Sn].[Ba].[Cu] XBQLSSQTYJSTFT-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical group [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 3
- 229960001296 zinc oxide Drugs 0.000 description 22
- 239000010408 film Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910018507 Al—Ni Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of binode stacked solar cell, cascade solar cells and preparation method thereof.The present invention is using the CBTS thin film solar cell of broad-band gap as top battery, the CIGS thin film solar cell of narrow band gap is as bottom battery, using the CIGS molybdenum layer in metal electrode and CIGS thin film solar cell as the both ends of binodal lamination, binode stacked solar cell, cascade solar cell is formed.Binode stacked solar cell, cascade solar cell preparation method simple process provided by the present invention, the binode stacked solar cell, cascade solar cell of preparation can break through the limitation of unijunction SQ theoretical efficiency, realize that wide spectrum absorbs advantage.
Description
Technical field
The present invention relates to solar cell fields, more particularly to a kind of binode stacked solar cell, cascade solar cell and preparation method thereof.
Background technique
In recent years, continuous improvement and serious problem of environmental pollution with the world to energy demand, photovoltaic power generation skill
Art is because its unique advantage is increasingly by everybody attention.
Copper indium gallium selenide CIGS thin film solar cell is because its unique advantage is rapidly developed and industrialization will be done step-by-step.
This battery has following characteristics: 1) forbidden bandwidth of copper indium gallium selenide can adjust within the scope of 1.04eV-1.67eV, and optimal band gap is
1.15eV is a kind of good bottom battery in stacked solar cell, cascade solar cell；2) copper indium gallium selenide has high efficiency, and peak efficiency has surpassed
Cross 23%；3) CIGS can be prepared on flexible substrates, obtain a kind of flexible battery, 4) copper indium gallium selenide is a kind of direct band gap half
Conductor is up to 10 to the absorption coefficient of visible light5cm-1, CuInGaSe absorbed layer thickness only needs 1.5-2.5 μm, entire battery
With a thickness of 3-4 μm；5) Radiation hardness is strong, compares and is suitable as space power system；6) dim light characteristic is good.Currently, copper indium gallium selenide is thin
Film battery has been carried out industrialization production, is used widely.
Copper barium tin sulphur (Cu2BaSnS4, CBTS) thin film solar cell because its protrude feature become in recent years everybody research
Hot spot.CBTS is direct band-gap semicondictor as CIGS, and bandgap range is in 1.5eV-2.0eV, in stacked solar cell, cascade solar cell
In be a kind of ideal top battery, absorption coefficient is big, and required cell thickness is thin, advantageously reduces consumption of raw materials；It is most important excellent
Gesture is that the constituent of CBTS is all than more rich element on the earth, and for future, development will provide possibility on a large scale, and
By theoretical calculation and simulation, it is found that without deep energy level defect, solid theoretical base is provided for further improved efficiency by CBTS
Plinth.
Although CIGS thin film solar cell and CBTS thin film solar cell have the above advantage, existing CIGS thin film
Solar cell and CBTS thin film solar cell are single junction cell, and the improved efficiency of single junction cell is by unijunction Xiao Keli-
The limitation of the Kui Yise limit (Shockley-Queisserlimit, SQ) theoretical efficiency, battery efficiency are low.
Summary of the invention
The object of the present invention is to provide a kind of binode stacked solar cell, cascade solar cells and preparation method thereof, to solve existing unijunction electricity
The problem of pond low efficiency.
To achieve the above object, the present invention provides following schemes:
A kind of binode stacked solar cell, cascade solar cell, comprising: glass liner body, copper indium gallium selenide CIGS thin film solar cell, the first anti-reflection
Layer, copper barium tin sulphur CBTS thin film solar cell, metal electrode and the second anti-reflection layer；
The CIGS thin film solar cell is bottom battery, and the glass liner body is set to the CIGS thin film solar cell
Bottom, the CIGS thin film solar cell include CIGS molybdenum layer, CIGS absorbed layer, CIGS buffer layer, CIGS resistive formation and
CIGS transparent conducting glass layer；The CIGS molybdenum layer, the CIGS absorbed layer, the CIGS buffer layer, the CIGS resistive formation
And the CIGS transparent conducting glass layer is cascading from bottom to up；
First anti-reflection layer is set between the CIGS thin film solar cell and the CBTS thin film solar cell；
The CBTS thin film solar cell is top battery, and the CBTS thin film solar cell includes CBTS absorbed layer, CBTS
Buffer layer, CBTS resistive formation and CBTS transparent conducting glass layer；It is the CBTS absorbed layer, the CBTS buffer layer, described
CBTS resistive formation and the CBTS transparent conducting glass layer are cascading from bottom to up；
The metal electrode is set between the CBTS transparent conducting glass layer and second anti-reflection layer, forms binode
Stacked solar cell, cascade solar cell.
Optionally, the ingredient of the CIGS buffer layer and the CBTS buffer layer is cadmium sulfide or zinc sulphide.
Optionally, the ingredient of the CIGS resistive formation and the CBTS resistive formation is zinc-magnesium oxide or zinc oxide.
Optionally, the ingredient of the CIGS transparent conducting glass layer and the CIGS transparent conducting glass layer is that aluminium is mixed
Miscellaneous zinc oxide, boron doping zinc oxide or tin dope indium oxide.
Optionally, the metal electrode is nickel aluminium nickel electrode.
Optionally, the ingredient of first anti-reflection layer and second anti-reflection layer is magnesium fluoride.
A kind of binode stacked solar cell, cascade solar cell preparation method, the preparation method are used to prepare a kind of binode lamination sun electricity
Pond, the binode stacked solar cell, cascade solar cell include glass liner body, copper indium gallium selenide CIGS thin film solar cell, the first anti-reflection layer, copper barium
Tin sulphur CBTS thin film solar cell, metal electrode and the second anti-reflection layer；
The preparation method includes:
It takes clean glass liner body to be cleaned, is dried up the glass liner body with nitrogen gun after cleaning；
One layer of molybdenum Mo electrode layer of bottom deposit using DC sputtering equipment to the glass liner body for cleaning completion, as
The back electrode of the CIGS thin film solar cell；
On the basis of polynary coevaporation equipment, absorbed on the Mo electrode layer using polynary coevaporation method preparation CIGS
Layer；
CIGS buffer layer is deposited using chemical water bath or magnetron sputtering method；
CIGS resistive formation is prepared using magnetron sputtering；
In ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, one layer of CIGS electrically conducting transparent glass is deposited
Glass layer, the Window layer as the CIGS thin film solar cell；
First anti-reflection layer is prepared using magnetron sputtering method or electron beam；
In the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method；
CBTS buffer layer is deposited using chemical water bath or magnetron sputtering method.
CBTS resistive formation is prepared using magnetron sputtering method.
Using radio-frequency magnetron sputter method, one layer of CBTS transparent conducting glass layer is deposited, as CBTS thin film solar cell
Window layer.
Metal electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, as top
Electrode.
Second anti-reflection layer is prepared using magnetron sputtering or electron beam, forms binode stacked solar cell, cascade solar cell.
Optionally, described that clean glass liner body is taken to be cleaned, the glass liner body is blown with nitrogen gun after cleaning
It is dry, it specifically includes:
The glass liner body is placed in acetone, dehydrated alcohol, ultrasonic cleaning 15min in deionized water, then uses nitrogen
Rifle dries up the glass liner body；The glass liner body is soda-lime glass liner body.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: the present invention provides one kind
Binode stacked solar cell, cascade solar cell and preparation method thereof, because different sub- batteries absorbs the light of different-waveband in stacked solar cell, cascade solar cell,
Realize full spectral absorption, the band gap of ideal bottom battery is 1.1eV, and the ideal band gap for pushing up battery is 1.8eV or so, and CIGS
It is ideal bottom battery and top battery respectively with CBTS, and CBTS can be prepared using low temperature solution polycondensation, will not destroy the bottom CIGS
The performance of battery, binode stacked solar cell, cascade solar cell provided by the present invention and preparation method thereof can not only play CIGS battery and
The advantage of CBTS battery can also expand the absorption to sun solar spectrum, improve battery efficiency, efficient for the following extensive development
The offer of rate device is possible, and is exported using two end structures, has the advantage of simple process, saving material, increase optical absorption.This
Outside, the theoretical efficiency of binode stacked solar cell, cascade solar cell provided by the present invention can be to 44%, higher than the theoretical efficiency of single junction cell
30%.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is binode stacked solar cell, cascade solar cell structure chart provided by the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of binode stacked solar cell, cascade solar cells, can be improved efficiency of solar cell.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is binode stacked solar cell, cascade solar cell structure chart provided by the present invention, as shown in Figure 1, a kind of binode lamination sun
Battery, comprising: glass liner body 1, copper indium gallium selenide CIGS thin film solar cell, the first anti-reflection layer, the copper barium tin sulphur CBTS film sun
Battery, metal electrode and the second anti-reflection layer.
The CIGS thin film solar cell is bottom battery, and the glass liner body is set to the CIGS thin film solar cell
Bottom, the CIGS thin film solar cell includes CIGS molybdenum layer 2, CIGS absorbed layer 3, CIGS buffer layer 4, CIGS resistive formation 5
And CIGS transparent conducting glass layer 6；It is the CIGS molybdenum layer 2, the CIGS absorbed layer 3, the CIGS buffer layer 4, described
CIGS resistive formation 5 and the CIGS transparent conducting glass layer 6 are cascading from bottom to up.
First anti-reflection layer 7 is set between the CIGS thin film solar cell and the CBTS thin film solar cell.
The CBTS thin film solar cell is top battery, and the CBTS thin film solar cell includes CBTS absorbed layer 8, CBTS
Buffer layer 9, CBTS resistive formation 10 and CBTS transparent conducting glass layer 11；The CBTS absorbed layer 8, the CBTS buffer layer 9,
The CBTS resistive formation 10 and the CBTS transparent conducting glass layer 11 are cascading from bottom to up.
The metal electrode 12 is set between the CBTS transparent conducting glass layer 11 and second anti-reflection layer 13, shape
At binode stacked solar cell, cascade solar cell.
The present invention due to use two end stacked solar cell, cascade solar cell of CIGS/CBTS binode, can not only play CIGS battery and
The respective advantage of CBTS battery, can also expand the absorption to sun solar spectrum, improve efficiency, high for the following extensive development
Efficiency device offer is possible, and is exported using two end structures, has the advantage of simple process, saving material, increase optical absorption.
Embodiment 1
CIGS battery preparation technique is as follows:
(1) clean soda-lime glass liner body is taken to be cleaned, cleaning method is that soda-lime glass is successively placed in acetone, anhydrous second
Ultrasonic cleaning 15min, is then dried up with nitrogen gun in alcohol, deionized water.
(2) one layer of Mo electrode of soda-lime glass substrate deposition for being completed cleaning using DC sputtering equipment, too as CIGS
Positive battery device back electrode.
(3) on the basis of polynary coevaporation equipment, CIGS is prepared using polynary coevaporation method on the Mo electrode layer
Absorbed layer.
(4) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(5) resistive formation zinc oxide ZnO is prepared using magnetron sputtering.
(6) in ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, layer of transparent electro-conductive glass is deposited
TCO thin film, as the Window layer of CIGS thin film solar cell, transparent conducting glass TCO using aluminium-doped zinc oxide (Al-ZnO,
AZO)。
CBTS preparation process is as follows:
(7) in the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method.
(8) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(9) zinc oxide ZnO resistive formation is prepared using magnetron sputtering.
(10) radio-frequency magnetron sputter method is used, layer of transparent electro-conductive glass TCO thin film is deposited, as CBTS film sun electricity
The Window layer in pond, transparent conducting glass TCO use AZO.
Nickel aluminium nickel-Al-Ni is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer
Electrode, as top electrode.
Magnesium fluoride MgF is prepared using magnetron sputtering or electron beam2Anti-reflection layer.
For the present embodiment 1 for other embodiments, the buffer layer in embodiment 1 uses cadmium sulfide, and resistive formation uses
Zinc oxide, transparent conducting glass layer use aluminium-doped zinc oxide, and simple process is mature.
Embodiment 2
CIGS battery preparation technique is as follows:
(1) clean soda-lime glass liner body is taken to be cleaned, cleaning method is that soda-lime glass is successively placed in acetone, anhydrous second
Ultrasonic cleaning 15min, is then dried up with nitrogen gun in alcohol, deionized water.
(2) one layer of Mo electrode of soda-lime glass substrate deposition for being completed cleaning using DC sputtering equipment, too as CIGS
Positive battery device back electrode.
(3) on the basis of polynary coevaporation equipment, CIGS is prepared using polynary coevaporation method on the Mo electrode layer
Absorbed layer.
(4) chemical water bath buffer layer is used, buffer layer uses ZnS.
(5) resistive formation zinc oxide ZnO is prepared using magnetron sputtering.
(6) in ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, layer of transparent electro-conductive glass is deposited
TCO thin film, as the Window layer of CIGS thin film solar cell, transparent conducting glass TCO uses AZO.
CBTS preparation process is as follows:
(7) in the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method.
(8) chemical water bath buffer layer is used, buffer layer uses ZnS.
(9) zinc oxide ZnO resistive formation is prepared using magnetron sputtering.
(10) radio-frequency magnetron sputter method is used, layer of transparent electro-conductive glass TCO thin film is deposited, as CBTS film sun electricity
The Window layer in pond, transparent conducting glass TCO use AZO.
Ni-Al-Ni electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, is made
For top electrode.
MgF is prepared using magnetron sputtering or electron beam2Anti-reflection layer.
For the present embodiment 2 for other embodiments, the buffer layer in embodiment 2 uses zinc sulphide, and resistive formation uses
Zinc oxide, transparent conducting glass layer not will cause dirt using nontoxic zinc sulphide using aluminium-doped zinc oxide in process of production
Dye.
Embodiment 3
CIGS battery preparation technique is as follows:
(1) clean soda-lime glass liner body is taken to be cleaned, cleaning method is that soda-lime glass is successively placed in acetone, anhydrous second
Ultrasonic cleaning 15min, is then dried up with nitrogen gun in alcohol, deionized water.
(2) one layer of Mo electrode of soda-lime glass substrate deposition for being completed cleaning using DC sputtering equipment, too as CIGS
Positive battery device back electrode.
(3) on the basis of polynary coevaporation equipment, CIGS is prepared using polynary coevaporation method on the Mo electrode layer
Absorbed layer.
(4) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(5) resistive formation zinc-magnesium oxide Zn is prepared using magnetron sputtering1-xMgxO。
(6) in ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, layer of transparent electro-conductive glass is deposited
TCO thin film, as the Window layer of CIGS thin film solar cell, transparent conducting glass TCO uses AZO.
CBTS preparation process is as follows:
(7) in the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method.
(8) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(9) Zn is prepared using magnetron sputtering1-xMgxO resistive formation.
(10) radio-frequency magnetron sputter method is used, layer of transparent electro-conductive glass TCO thin film is deposited, as CBTS film sun electricity
The Window layer in pond, transparent conducting glass TCO use AZO.
Ni-Al-Ni electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, is made
For top electrode.
MgF is prepared using magnetron sputtering or electron beam2Anti-reflection layer.
For the present embodiment 3 for other embodiments, the buffer layer in embodiment 3 uses cadmium sulfide, and resistive formation uses
Zinc-magnesium oxide, transparent conducting glass layer use aluminium-doped zinc oxide, and resistive formation uses the adjustable band gap of zinc-magnesium oxide, more
Good matches with battery structure.
Embodiment 4
CIGS battery preparation technique is as follows:
(1) clean soda-lime glass liner body is taken to be cleaned, cleaning method is that soda-lime glass is successively placed in acetone, anhydrous second
Ultrasonic cleaning 15min, is then dried up with nitrogen gun in alcohol, deionized water.
(2) one layer of Mo electrode of soda-lime glass substrate deposition for being completed cleaning using DC sputtering equipment, too as CIGS
Positive battery device back electrode.
(3) on the basis of polynary coevaporation equipment, CIGS is prepared using polynary coevaporation method on the Mo electrode layer
Absorbed layer.
(4) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(5) resistive formation zinc oxide ZnO is prepared using magnetron sputtering.
(6) in ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, layer of transparent electro-conductive glass is deposited
TCO thin film, as the Window layer of CIGS thin film solar cell, ITO is respectively adopted in transparent conducting glass TCO.
CBTS preparation process is as follows:
(7) in the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method.
(8) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(9) zinc oxide ZnO resistive formation is prepared using magnetron sputtering.
(10) radio-frequency magnetron sputter method is used, layer of transparent electro-conductive glass TCO thin film is deposited, as CBTS film sun electricity
The Window layer in pond, transparent conducting glass TCO use tin dope indium oxide ITO.
Ni-Al-Ni electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, is made
For top electrode.
MgF is prepared using magnetron sputtering or electron beam2Anti-reflection layer.
For the present embodiment 4 for other embodiments, the buffer layer in embodiment 4 uses cadmium sulfide, and resistive formation uses
Zinc oxide, transparent conducting glass layer use tin dope indium oxide, and the light transmittance of tin dope indium oxide is high, and enables to
The film of bright conductive glass layer is stronger.
Embodiment 5
CIGS battery preparation technique is as follows:
(1) clean soda-lime glass liner body is taken to be cleaned, cleaning method is that soda-lime glass is successively placed in acetone, anhydrous second
Ultrasonic cleaning 15min, is then dried up with nitrogen gun in alcohol, deionized water.
(2) one layer of Mo electrode of soda-lime glass substrate deposition for being completed cleaning using DC sputtering equipment, too as CIGS
Positive battery device back electrode.
(3) on the basis of polynary coevaporation equipment, CIGS is prepared using polynary coevaporation method on the Mo electrode layer
Absorbed layer.
(4) chemical water bath buffer layer is used, buffer layer uses cadmium sulfide CdS.
(5) resistive formation zinc oxide ZnO is prepared using magnetron sputtering.
(6) in ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, layer of transparent electro-conductive glass is deposited
TCO thin film, as the Window layer of CIGS thin film solar cell, transparent conducting glass TCO uses BZO.
CBTS preparation process is as follows:
(7) in the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method.
(8) chemical water bath or magnetron sputtering method buffer layer are used, buffer layer uses cadmium sulfide CdS.
(9) zinc oxide ZnO resistive formation is prepared using magnetron sputtering.
(10) radio-frequency magnetron sputter method is used, layer of transparent electro-conductive glass TCO thin film is deposited, as CBTS film sun electricity
The Window layer in pond, transparent conducting glass TCO use boron doping zinc oxide (B-ZnO, BZO).
Ni-Al-Ni electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, is made
For top electrode.
MgF is prepared using magnetron sputtering or electron beam2Anti-reflection layer.
For the present embodiment 5 for other embodiments, the buffer layer in embodiment 5 uses cadmium sulfide, and resistive formation uses
Zinc oxide, transparent conducting glass layer use boron doping zinc oxide, and the resistivity of boron doping zinc-oxide film is minimum, near infrared band
Transmitance is high, and therefore, battery short circuit electric current is high.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For system disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (8)
1. a kind of binode stacked solar cell, cascade solar cell characterized by comprising glass liner body, copper indium gallium selenide CIGS thin film solar cell,
First anti-reflection layer, copper barium tin sulphur CBTS thin film solar cell, metal electrode and the second anti-reflection layer；
The CIGS thin film solar cell is bottom battery, and the glass liner body is set to the bottom of the CIGS thin film solar cell
Portion, the CIGS thin film solar cell include CIGS molybdenum layer, CIGS absorbed layer, CIGS buffer layer, CIGS resistive formation and CIGS
Transparent conducting glass layer；The CIGS molybdenum layer, the CIGS absorbed layer, the CIGS buffer layer, the CIGS resistive formation and
The CIGS transparent conducting glass layer is cascading from bottom to up；
First anti-reflection layer is set between the CIGS thin film solar cell and the CBTS thin film solar cell；
The CBTS thin film solar cell is top battery, and the CBTS thin film solar cell includes CBTS absorbed layer, CBTS buffering
Layer, CBTS resistive formation and CBTS transparent conducting glass layer；The CBTS absorbed layer, the CBTS buffer layer, the CBTS high
Resistance layer and the CBTS transparent conducting glass layer are cascading from bottom to up；
The metal electrode is set between the CBTS transparent conducting glass layer and second anti-reflection layer, forms binode lamination
Solar cell.
2. binode stacked solar cell, cascade solar cell according to claim 1, which is characterized in that the CIGS buffer layer and described
The ingredient of CBTS buffer layer is cadmium sulfide or zinc sulphide.
3. binode stacked solar cell, cascade solar cell according to claim 1, which is characterized in that the CIGS resistive formation and described
The ingredient of CBTS resistive formation is zinc-magnesium oxide or zinc oxide.
4. binode stacked solar cell, cascade solar cell according to claim 1, which is characterized in that the CIGS transparent conducting glass layer with
And the ingredient of the CIGS transparent conducting glass layer is aluminium-doped zinc oxide, boron doping zinc oxide or tin dope indium oxide.
5. binode stacked solar cell, cascade solar cell according to claim 1, which is characterized in that the metal electrode is nickel aluminium nickel electricity
Pole.
6. binode stacked solar cell, cascade solar cell according to claim 1, which is characterized in that first anti-reflection layer and described
The ingredient of two anti-reflection layers is magnesium fluoride.
7. a kind of binode stacked solar cell, cascade solar cell preparation method, which is characterized in that it is folded that the preparation method is used to prepare a kind of binode
Layer solar cell, the binode stacked solar cell, cascade solar cell includes glass liner body, copper indium gallium selenide CIGS thin film solar cell, the first anti-reflection
Layer, copper barium tin sulphur CBTS thin film solar cell, metal electrode and the second anti-reflection layer；
The preparation method includes:
It takes clean glass liner body to be cleaned, is dried up the glass liner body with nitrogen gun after cleaning；
Using the one layer of molybdenum Mo electrode layer of bottom deposit for the glass liner body that DC sputtering equipment completes cleaning, as described
The back electrode of CIGS thin film solar cell；
On the basis of polynary coevaporation equipment, CIGS absorbed layer is prepared using polynary coevaporation method on the Mo electrode layer；
CIGS buffer layer is deposited using chemical water bath or magnetron sputtering method；
CIGS resistive formation is prepared using magnetron sputtering method；
In ion source aid magnetron sputtering equipment, using radio-frequency magnetron sputter method, one layer of CIGS transparent conducting glass layer is deposited,
Window layer as the CIGS thin film solar cell；
First anti-reflection layer is prepared using magnetron sputtering or electron beam；
In the upper surface of first anti-reflection layer, CBTS absorbed layer is prepared using solution spin-coating method；
CBTS buffer layer is deposited using chemical water bath or magnetron sputtering method；
CBTS resistive formation is prepared using magnetron sputtering method；
Using radio-frequency magnetron sputter method, one layer of CBTS transparent conducting glass layer, the window as CBTS thin film solar cell are deposited
Layer；
Metal electrode is prepared using thermal evaporation or electron beam evaporation on the CBTS transparent conducting glass layer, as top electricity
Pole；
Second anti-reflection layer is prepared using magnetron sputtering or electron beam, forms binode stacked solar cell, cascade solar cell.
8. binode stacked solar cell, cascade solar cell preparation method according to claim 7, which is characterized in that described to take clean glass
Liner body is cleaned, and is dried up the glass liner body with nitrogen gun after cleaning, is specifically included:
The glass liner body is placed in acetone, dehydrated alcohol, ultrasonic cleaning 15min in deionized water, it then will with nitrogen gun
The glass liner body drying；The glass liner body is soda-lime glass liner body.
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| CN112003360A (en) * | 2020-08-24 | 2020-11-27 | 暨南大学 | Multiband mixed light energy acquisition system, acquisition method and storage medium |
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