CN110068393A - A kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging - Google Patents
A kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging Download PDFInfo
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- CN110068393A CN110068393A CN201910266130.2A CN201910266130A CN110068393A CN 110068393 A CN110068393 A CN 110068393A CN 201910266130 A CN201910266130 A CN 201910266130A CN 110068393 A CN110068393 A CN 110068393A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims abstract description 3
- 238000005859 coupling reaction Methods 0.000 claims abstract description 3
- 239000003989 dielectric material Substances 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- -1 charge-trapping pole Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
Abstract
The invention belongs to photodetections, imaging field, and in particular to a kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging.Position-sensitive anode includes substrate, charge-trapping pole, metal anode and connecting wire；Substrate is made of dielectric material, and charge-trapping pole is located on substrate input face and is close to substrate input face；Metal anode includes the independent metal anode unit arranged with p × q array, wherein p, q is integer, and p >=q, it is below substrate input face and separated by a distance with substrate input face, metal anode and charge-trapping pole is set to form capacitive coupling, the Charged Couple that charge-trapping pole is collected into metal anode；Connecting wire includes the separate conductors arranged with p × q array, is connected one to one with metal anode unit.Solve that existing charge division type position-sensitive anode technique manufacture difficulty is big, spatial resolution is not easy to improve, be not suitable for the defect of high-temperature baking.
Description
Technical field
The invention belongs to photodetections, imaging field, and in particular to it is a kind of for photodetection imaging position-sensitive anode and
Position-sensitive anode detector.
Background technique
Photon counting imaging be to atomic weak signal target imaging a kind of technology, it by faint optical signal be converted into electric signal into
Row amplification is read by the position-sensitive anode differentiated with two-dimensional position, the intensity of the number of photons reflection echo signal detected, position
The spatial resolution of quick anode determines the resolution of image.Photon Counting Image Acquisition Technique high-energy physics, core medical treatment, deep space exploration,
The fields such as nuclear radiation monitoring have important application.Position-sensitive anode can be divided by decoding process: impedance type anode and charge division
Type anode.Impedance type anode is different according to the electrode impedance at anode different location and generates different output signals to realize pair
The position resolution of target is detected, spatial resolution is limited by charge noise.Charge division type anode is according to anode different location
The quantity of electric charge that place detects, to solve the centroid position of charge cloud cluster.Charge division type anode is needed by increasing anode segmentation
Quantity improve spatial resolution, after dividing density increase, technique manufacture difficulty increases, leakproofness is difficult to ensure.In Shen
It please be number to describe charge point in the Chinese patent application " position-sensitive anode detector and preparation method thereof " of 201710438625.X
Type anode is cut, the signal of each segmentation anode is drawn by lead across dielectric base.When segmentation anode quantity increases, lead increases
After more, during making position-sensitive anode detector, the position-sensitive anode of high density segmentation is easy gas leakage in high-temperature baking, breaks
The vacuum environment of bad detector, causes device not to be available.And after dividing anode density increase, charge is shared serious, empty
Between resolution limitations.
Summary of the invention
Present invention aim to address existing charge division type position-sensitive anode technique manufacture difficulties, and big, spatial resolution is not easy
The defect for improving, being not suitable for high-temperature baking, provide a kind of high-temperature baking will not gas leakage, be easy to improve the quick sun in position of spatial resolution
Pole and detector with the position-sensitive anode.
The technical solution of the invention is as follows provides a kind of position-sensitive anode for photodetection imaging, and special character exists
In: including substrate, charge-trapping pole, metal anode and connecting wire；
Above-mentioned substrate is made of dielectric material, including substrate input face and substrate output face；
Above-mentioned charge-trapping pole is located on substrate input face and is close to substrate input face；
Above-mentioned metal anode includes the independent metal anode unit arranged with p × q array, and wherein p, q are integer, and p
>=q, it is below substrate input face and separated by a distance with substrate input face, so that metal anode and charge-trapping pole is formed electricity
Hold coupling, the Charged Couple that charge-trapping pole is collected into metal anode；
Above-mentioned connecting wire includes the separate conductors arranged with p × q array, is connected one to one with metal anode unit.
Further, in order to reduce charge horizontal proliferation range, reduction charge is shared between adjacent cathode elements, from
And spatial resolution is improved, above-mentioned metal anode is embedded in substrate interior, and one end of above-mentioned connecting wire is connect with metal anode, separately
One end passes through substrate output face and is located at except substrate output face.
Further, above-mentioned metal anode and conducting wire are located at below substrate output face.
Further, above-mentioned metal anode is close to output face.
Further, in order to which metal anode and its conducting wire are embedded in substrate interior, above-mentioned substrate is stack of ceramic plates superposition
It forms.
Further, above-mentioned charge-trapping extremely has the film of resistance, and film surface resistance is 250kohm/m2—
10Mohm/m2。
The present invention also provides a kind of position-sensitive anode detectors, the photocathode and electronics including shell, in shell times
Increase device, is characterized in that further include above-mentioned position-sensitive anode, charge-trapping pole and substrate input in above-mentioned position-sensitive anode
Face and package closure sealing-in form vacuum environment.
Further, above-mentioned electron multiplier is microchannel plate, metal passage dynode, semiconductor diode or snowslide
Silicon photodetector.
Further, above-mentioned electron multiplier is in a manner of one group, upper and lower two groups or multiple groups as the inside of shell, position
Between photocathode and charge-trapping pole.
The beneficial effects of the present invention are:
1, the present invention is using stack of ceramic plates as substrate, on first layer ceramic wafer plating resistive layer as charge-trapping pole,
First layer ceramic wafer and charge-trapping pole can form vacuum environment with sensitive detection parts seal, and be able to bear high temperature baking
It is roasting；Array metal anode plate and its conducting wire are located at outside vacuum environment, and production, anode-array plate and the conducting wire of anode-array plate weld
And its with ceramic wafer welding will not tamper detection device vacuum environment, reduce the manufacture difficulty of anode-array, be conducive to make
High density arrays anode improves the spatial resolution of detector；
2, array metal anode plate is embedded in ceramic wafer, charge horizontal proliferation range is reduced, to reduce adjacent sun
Crosstalk between pole plate, further increases spatial resolution.
Detailed description of the invention
Attached drawing is not drawn to scale.In the accompanying drawings, identical or nearly identical composition each of is marked in each diagram
Part can be indicated by the same numeral.For clarity, in each figure, not each component part is labeled.
Fig. 1 is the structural schematic diagram of position-sensitive anode embodiment one of the invention；
Fig. 2 is the structural schematic diagram of position-sensitive anode embodiment two of the invention；
Fig. 3 is the structural schematic diagram of one embodiment of position-sensitive anode detector of the invention.
Appended drawing reference in figure are as follows: 101- substrate, 101a- substrate input face, 101b- substrate output face, 102- charge-trapping
Pole, 103- metal anode, 103a- metal anode unit, 104- connecting wire, 104a- conducting wire, 201- shell, 202- photoelectricity yin
Pole, 203- electron multiplier.
Specific embodiment
In order to better understand the present invention, further clear, complete explanation is made to invention with reference to the accompanying drawing.It should infuse
Meaning, the embodiments described herein are served only for for example, being not intended to restrict the invention.Position-sensitive anode of the invention can be independent
It uses, also can be used in combination in other embodiments.
Embodiment one
Referring to Fig. 1, the present embodiment position-sensitive anode includes substrate 101, charge-trapping pole 102, metal anode 103 and its connection
Conducting wire 104.Using the upper surface of substrate 101 as substrate input face 101a, using the lower surface of substrate 101 as substrate output face
101b, the material of substrate 101 is ceramics in the present embodiment, and the material of the substrate 101 can be any dielectric in other embodiments
Material.
Charge-trapping pole 102 is the film with resistance, is plated on substrate input face 101a, tight with input face 101a
Patch；Metal anode 103 includes the independent metal anode unit 103a arranged with p × q array, and connecting wire 104 includes with p × q
The separate conductors 104a of array arrangement, each conducting wire are welded on the bottom of each independent metal anode unit, metal anode
103 and connecting wire 104 be located at the lower section of substrate output face 101b, and welded with substrate output face 101b.
Charge-trapping pole 102 is collected into after charge, and induction is in the metal anode unit of corresponding position, each metal sun
Pole unit individual output signals, to realize the position resolution to detectable signal.
Embodiment two
Referring to fig. 2, the present embodiment position-sensitive anode includes substrate 101, charge-trapping pole 102, metal anode 103 and its connection
Conducting wire 104.Using the upper surface of substrate 101 as substrate input face 101a, using the lower surface of substrate 101 as substrate output face
101b, the material of substrate 101 is ceramics in the present embodiment, and the material of the substrate 101 can be any dielectric in other embodiments
Material.
Charge-trapping pole 102 is the film with resistance, is plated on substrate input face 101a, tight with input face 101a
Patch；Metal anode 103 includes the independent metal anode unit arranged with p × q array, and connecting wire 104 includes with p × q array
The separate conductors of arrangement, each conducting wire are welded on the bottom of each independent metal anode unit.Metal anode 103 is embedded in lining
Inside bottom 101, there is a certain distance between substrate input face 101a, one end of connecting wire 104 and metal anode 103 connect
It connects, the other end passes through substrate output face 101b and is located at except substrate output face 101b.Charge-trapping pole 102 be collected into charge it
Afterwards, induction is in the metal anode unit of corresponding position, each metal anode unit individual output signals, to realize to detection
The position resolution of signal.
Metal anode 103 and its connecting wire 104 are embedded in ceramic substrate in the present embodiment, charge is reduced and laterally expands
Range is dissipated, is shared between adjacent cathode elements to reduce charge, to improve spatial resolution.
Embodiment three
The present embodiment is by taking one embodiment of position-sensitive anode in position-sensitive anode detector as an example, naturally it is also possible to be embodiment two
In position-sensitive anode.
Referring to Fig. 3, the present embodiment position-sensitive anode detector include shell 201, the photocathode 202 inside shell with
It the charge-trapping pole 102 on the position-sensitive anode in electron multiplier 203 and embodiment, ceramic substrate 101 and its surface can be with spy
The shell 201 for surveying device is sealed sealing-in, forms vacuum environment and is not divided since ceramic substrate is whole piece, high temperature dries
It is roasting to will not influence its air-tightness, high-temperature baking can be born.When high temperature prepares the photocathode 202 of detector, metal anode 103
And its connecting wire 104 is located at outside vacuum environment, the two connection and its need not consider air-tightness with the connection of ceramic substrate, this
Its manufacture difficulty is greatly reduced, so as to make high density arrays anode, greatly improves spatial resolution.In the reality of Fig. 3
It applies in example, optical signal to be detected is incident to photocathode 202 and is converted into photoelectron signal, and photoelectron is accelerated by having
The electron multiplier 203 of position resolution is further magnified, and is then collected by charge-trapping pole 102, metal anode 103
Corresponding units sense charge, finally export by connecting wire 104.
Wherein, there is potential difference between charge-trapping pole 102 and metal anode 103；Metal anode 103 and its connecting wire
104 be equipotentiality body；Electron multiplier 203 is microchannel plate, metal passage dynode, semiconductor diode or snowslide silicon photoelectricity
Detector, electron multiplier, as the inside of the detector shell, are located at light in a manner of one group, upper and lower two groups or multiple groups
Between electric cathode 202 and charge-trapping pole 102.
Although exemplary embodiment describes the present invention with reference to several, it is to be understood that, term used is explanation and shows
Example property, term and not restrictive.The spirit or reality that can be embodied in a variety of forms due to the present invention without departing from invention
Matter, it should therefore be appreciated that above-described embodiment is not limited to any of the foregoing details, and the spirit defined by appended claims
Changing and be modified with the whole widely explained, therefore fallen into claim or phase equivalent scope in range all should be accompanying power
Benefit requires to be covered.
Claims (9)
1. a kind of position-sensitive anode for photodetection imaging, it is characterised in that: including substrate (101), charge-trapping pole
(102), metal anode (103) and connecting wire (104)；
The substrate (101) is made of dielectric material, including substrate input face (101a) and substrate output face (101b)；
The charge-trapping pole (102) is located on substrate input face (101a) and is close to substrate input face (101a)；
The metal anode (103) includes the independent metal anode unit (103a) arranged with p × q array, and wherein p, q are whole
Number, and p >=q, it is below substrate input face (101a) and separated by a distance with substrate input face (101a), make metal anode
(103) capacitive coupling, the Charged Couple that charge-trapping pole (102) are collected into metal sun are formed with charge-trapping pole (102)
Pole (103)；
The connecting wire (104) includes the separate conductors (104a) arranged with p × q array, with metal anode unit (103a)
It connects one to one.
2. a kind of position-sensitive anode for photodetection imaging according to claim 1, it is characterised in that:
The metal anode (103) is embedded in substrate (101) inside, one end and metal anode (103) of the connecting wire (104)
Connection, the other end pass through substrate output face (101b) and are located at except substrate output face (101b).
3. a kind of position-sensitive anode for photodetection imaging according to claim 1, it is characterised in that: the metal sun
Pole (103) and connecting wire (104) are located at below substrate output face (101b).
4. a kind of position-sensitive anode for photodetection imaging according to claim 3, it is characterised in that: the metal sun
It is close to output face (101b) pole (103).
5. a kind of position-sensitive anode for photodetection imaging according to claim 1, it is characterised in that: the substrate
(101) it is formed by stacking for stack of ceramic plates.
6. a kind of position-sensitive anode for photodetection imaging according to claim 5, it is characterised in that: the charge is received
Collector (102) is the film with resistance, and film surface resistance is 250kohm/m2—10Mohm/m2。
7. a kind of position-sensitive anode detector, including shell (201), the photocathode (202) being located in shell (201) and electronics times
Increase device (203), it is characterised in that: it further include any position-sensitive anode of claim 1-6, the charge in the position-sensitive anode
Collector (102) and substrate input face (101a) and package closure sealing-in form vacuum environment.
8. position-sensitive anode detector according to claim 7, it is characterised in that: the electron multiplier (203) is micro- logical
Guidance tape, metal passage dynode, semiconductor diode or snowslide silicon photodetector.
9. position-sensitive anode detector according to claim 8, it is characterised in that: the electron multiplier with one group, up and down
The mode of two groups or multiple groups as shell inside, between photocathode (202) and charge-trapping pole (102).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910266130.2A CN110068393A (en) | 2019-04-03 | 2019-04-03 | A kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910266130.2A CN110068393A (en) | 2019-04-03 | 2019-04-03 | A kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging |
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| Publication Number | Publication Date |
|---|---|
| CN110068393A true CN110068393A (en) | 2019-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910266130.2A Pending CN110068393A (en) | 2019-04-03 | 2019-04-03 | A kind of position-sensitive anode and position-sensitive anode detector for photodetection imaging |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463100A (en) * | 2020-05-09 | 2020-07-28 | 北方夜视技术股份有限公司 | Photomultiplier special-shaped anode with rapid rise time characteristic and photomultiplier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478645A (en) * | 2008-12-20 | 2009-07-08 | 中国科学院西安光学精密机械研究所 | Electric charge induction image forming method based on semiconductor layer |
| US20160370476A1 (en) * | 2015-06-19 | 2016-12-22 | Photek Limited | Detector |
| CN107389187A (en) * | 2017-06-12 | 2017-11-24 | 中国科学院西安光学精密机械研究所 | Position-sensitive anode detector and preparation method thereof |
| CN209878135U (en) * | 2019-04-03 | 2019-12-31 | 中国科学院西安光学精密机械研究所 | Potential-sensitive anode for photoelectric detection imaging and potential-sensitive anode detector |
-
2019
- 2019-04-03 CN CN201910266130.2A patent/CN110068393A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478645A (en) * | 2008-12-20 | 2009-07-08 | 中国科学院西安光学精密机械研究所 | Electric charge induction image forming method based on semiconductor layer |
| US20160370476A1 (en) * | 2015-06-19 | 2016-12-22 | Photek Limited | Detector |
| CN107389187A (en) * | 2017-06-12 | 2017-11-24 | 中国科学院西安光学精密机械研究所 | Position-sensitive anode detector and preparation method thereof |
| CN209878135U (en) * | 2019-04-03 | 2019-12-31 | 中国科学院西安光学精密机械研究所 | Potential-sensitive anode for photoelectric detection imaging and potential-sensitive anode detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463100A (en) * | 2020-05-09 | 2020-07-28 | 北方夜视技术股份有限公司 | Photomultiplier special-shaped anode with rapid rise time characteristic and photomultiplier |
| CN111463100B (en) * | 2020-05-09 | 2022-08-16 | 北方夜视技术股份有限公司 | Photomultiplier special-shaped anode with rapid rise time characteristic and photomultiplier |
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