CN110061421A - A kind of semiconductor laser drive method and driving circuit - Google Patents
A kind of semiconductor laser drive method and driving circuit Download PDFInfo
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- CN110061421A CN110061421A CN201910335533.8A CN201910335533A CN110061421A CN 110061421 A CN110061421 A CN 110061421A CN 201910335533 A CN201910335533 A CN 201910335533A CN 110061421 A CN110061421 A CN 110061421A
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Abstract
The embodiment of the present invention provides a kind of semiconductor laser drive method and driving circuit, driving signal is generated according to the drive cycle of semiconductor laser, driving signal in the high level lasting time section of one drive cycle is made of N number of pulse, N is the integer greater than 1, and the pulse width of N number of pulse is identical；Wherein, N number of peak value of pulse is equal, and N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, or, N number of pulse is formed by N-1 pulse spacing and is equal, and the peak value in N number of pulse at least there are two pulse is unequal, alternatively, N number of pulse is formed by N-1 pulse spacing at least, there are two the pulse spacing, at least there are two the peak value of pulse is unequal in unequal and N number of pulse；To semiconductor laser output drive signal.It is suppressed or eliminated to carry out speckle without adding dissipation spot device outside, and then reduces structure complexity.
Description
The application is based on Chinese invention application 201510452361.4(2015-07-28), denomination of invention: one kind is partly led
The divisional application of body laser driving method and driving circuit.
Technical field
The present invention relates to semiconductor laser field more particularly to a kind of semiconductor laser drive method and drivings
Circuit.
Background technique
Laser is due to having many advantages, such as that good monochromaticjty, good directionality, brightness is high and is line spectrum, is highly suitable for laser
In display system, laser display technology is considered as the forth generation after white and black displays, colored display and high-definition digital are shown
Display technology, with can be achieved, big colour gamut is shown, color saturation is high, color-resolution is high, display screen size flexibility and changeability, section
Can be environmentally friendly the advantages that.Since laser has high coherence, when using a laser as display light source, it can generate and dissipate on the screen
Spot.The presence of speckle has seriously affected the image quality of laser display, makes the contrast and resolution ratio decline of image, has become
One of the main reason for restricting and hindering laser display fast-developing and the marketization.
In order to eliminate laser speckle, industry proposes the method for a variety of speckles of drawing up, such as: a piece of fortune is added in the optical path
Dynamic diffusion sheet generates random phase distribution by movement, so that speckle pattern is superimposed within the time of integration of human eye, thus
The effect for inhibiting speckle can be played, to achieve the purpose that inhibit speckle.
But the above method is to add dissipation spot device outside laser, structure is complicated, leads to higher cost.
Summary of the invention
The embodiment of the present invention provides a kind of semiconductor laser drive method and driving circuit, to without outer plus dissipate
Speckle is carried out in the case where spot device to suppress or eliminate, and then reduces structure complexity.
The embodiment of the present invention provides a kind of semiconductor laser drive method, comprising:
According to the drive cycle of semiconductor laser generate driving signal, a drive cycle include high level lasting time section and
The low level duration section, the driving signal in the high level lasting time section of a drive cycle are made of N number of pulse, and N is
Integer greater than 1；Wherein, the peak value in N number of pulse at least there are two pulse is unequal, and/or, N number of pulse institute
At least there are two the pulse spacing is unequal in the N-1 pulse spacing of formation；The driving is exported to the semiconductor laser
Signal.
Preferably, the peak value in N number of pulse at least there are two pulse is unequal, comprising: the peak value of N number of pulse
Successively decrease；Or the peak value of N number of pulse is incremented by；Or the change curve of the peak value of N number of pulse meets Gaussian curve.
Preferably, N number of pulse is formed by when at least unequal there are two the peak value of pulse in N number of pulse
N-1 pulse spacing is equal.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, packet
Include: N number of pulse is formed by N-1 pulse spacing and successively decreases；Or N number of pulse is formed by N-1 pulse spacing
It is incremented by；Or the change curve that N number of pulse is formed by N-1 pulse spacing meets Gaussian curve.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal when,
The peak value of N number of pulse is equal.
Preferably, described be incremented by linear increment.
Preferably, described be decremented to linear decrease.
Preferably, the semiconductor laser is red light semiconductor laser.
The embodiment of the present invention also provides a kind of semiconductor laser device driving circuit, comprising:
Signal generation unit, for generating driving signal according to the drive cycle of semiconductor laser, a drive cycle includes
High level lasting time section and the low level duration section, the driving signal in the high level lasting time section of a drive cycle
It is made of N number of pulse, N is the integer greater than 1；Wherein, the peak value in N number of pulse at least there are two pulse is unequal, and/
Or, N number of pulse is formed by N-1 pulse spacing at least, there are two the pulse spacing is unequal.
Signal output unit, for exporting the driving signal to the semiconductor laser.
Preferably, the peak value in N number of pulse at least there are two pulse is unequal, comprising: the peak value of N number of pulse
Successively decrease；Or the peak value of N number of pulse is incremented by；Or the change curve of the peak value of N number of pulse meets Gaussian curve.
Preferably, N number of pulse is formed by when at least unequal there are two the peak value of pulse in N number of pulse
N-1 pulse spacing is equal.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, packet
Include: N number of pulse is formed by N-1 pulse spacing and successively decreases；Or N number of pulse is formed by N-1 pulse spacing
It is incremented by；Or the change curve that N number of pulse is formed by N-1 pulse spacing meets Gaussian curve.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal when,
The peak value of N number of pulse is equal.
Preferably, described be incremented by linear increment.
Preferably, described be decremented to linear decrease.
Preferably, the semiconductor laser is red light semiconductor laser.
In the embodiment of the present invention, generate in the high level lasting time section in the drive cycle of semiconductor laser by N
A pulse, since at least unequal there are two the peak value of pulse in this N number of pulse and/or this N number of pulse is formed by N-1
In pulse spacing at least there are two the pulse spacing it is unequal, thus it is possible, on the one hand, due to only in drive cycle high level continue
N number of pulse is generated in period, it is ensured that the semiconductor laser is swashed in the high level time section of its drive cycle
The transmitting of light beam, on the other hand, due in this N number of pulse at least there are two pulse peak value is unequal and/or this N number of pulse
Be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, by between this adjusting peak value of pulse and pulse
Every mode, widen the wave-length coverage of semiconductor laser output light, laser made to obtain even variation on time dimension
Temperature finally expands the frequency difference between different laser beams to obtain equally distributed laser line, to reduce
The coherence of light source in laser display system, and then inhibit laser speckle.With increase in Optical Maser System in the prior art
Dissipation spot device is compared, and the embodiment of the present invention is without increasing dissipation spot device, and the spy simple, at low cost with system structure
Point.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only the embodiment of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to the attached drawing of offer other
Attached drawing.
Fig. 1 is the optical texture schematic diagram of DLP projection system in the prior art；
Fig. 2 is that one of DLP projection system in the prior art goes out photoperiod T and red light semiconductor laser, Green-emitting semiconductor
The drive signal waveform schematic diagram of laser and blue semiconductor laser；
Fig. 3 is the temperature-current curve synoptic diagram of semiconductor laser in the prior art；
Fig. 4 is that a kind of semiconductor laser provided in an embodiment of the present invention drives flow diagram；
Fig. 5 A be the pulse spacing of N number of pulse provided in an embodiment of the present invention it is equal when, the incremental wave of the peak linear of N number of pulse
Shape figure；
Fig. 5 B be the pulse spacing of N number of pulse provided in an embodiment of the present invention it is equal when, wave that the peak linear of N number of pulse successively decreases
Shape figure；
Fig. 5 C be N number of pulse provided in an embodiment of the present invention pulse spacing it is equal when, the peak value of N number of pulse change curve symbol
Close the waveform diagram of Gaussian curve；
When Fig. 6 A is that the peak value of N number of pulse provided in an embodiment of the present invention is equal, N number of pulse is formed by N-1 pulse spacing
The waveform diagram of linear increment；
When Fig. 6 B is that the peak value of N number of pulse provided in an embodiment of the present invention is equal, N number of pulse is formed by between N-1 pulse
Every the waveform diagram of linear decrease；
When Fig. 6 C is that the peak value of N number of pulse provided in an embodiment of the present invention is equal, N number of pulse is formed by between N-1 pulse
Every change curve meet the waveform diagram of Gaussian curve；
When Fig. 7 A is that the peak linear of N number of pulse provided in an embodiment of the present invention is incremented by, N number of pulse is formed by N-1 pulse
The incremental waveform diagram of spaced linear；
When Fig. 7 B is that the peak linear of N number of pulse provided in an embodiment of the present invention successively decreases, N number of pulse is formed by N-1 pulse
The waveform diagram that spaced linear successively decreases；
Fig. 8 is a kind of semiconductor laser drive circuit structural schematic diagram provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, technical solution in the embodiment of the present invention carry out it is clear, it is complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of semiconductor laser drive schemes, are carried out by the driving signal of laser scattered
Spot suppresses or eliminates, without increasing dissipation spot device, with simple, the at low cost feature of system structure.
In the embodiment of the present invention, the technical term being related to is as follows:
1, LD(Laser Diode, abbreviation semiconductor laser): it is to utilize the intrinsic level or doping energy in semiconductor material
Grade forms resonant cavity using the cleavage surface of lattice, generates level inversion in such a way that electric current injects, eventually passes through light amplification production
The device of raw laser.
2, PWM(Pulse Width Modulation, the modulation of abbreviation pulse width): it is defeated using the number of microprocessor
Analog circuit is controlled out, i.e., by being modulated to a series of pulse widths, carrys out the equivalent wave for generating different in width
Shape.
3, laser speckle: referring to coherent source when irradiating coarse object, and the light after scattering generates interference in space,
Some parts, which interfere, in space mutually grows, and has part to interfere cancellation, final the result is that occurring on screen granular
Light and dark spot, referred to as speckle.
4, coherence: the coherence of laser is generally divided into temporal coherence and spatial coherence.Temporal coherence refers to one
Train wave and itself wave for delaying time t, the size of self-coherence function between the two, it is to measure a train wave in the delay some time
Between after interfere oneself ability.
5, RGB(Red, Green, Blue, RGB laser display: are utilized) light source of the three color laser as three primary colours, leads to
A kind of technology that the mode of overscanning or illumination display chip is shown.
6, breadth of spectrum line: corresponding wave-length coverage is known as breadth of spectrum line when intensity generally being dropped to maximum value half.
Breadth of spectrum line is narrower, and the monochromaticjty of light source is better.
7, broadening of spectral lines: due to itself physical property or influenced by local environment physical state, send out atom
It penetrates or the spectrum line that absorbs becomes not the phenomenon that being the spectral line of single-frequency.
8, red shift: refer to the electromagnetic radiation of object for some reason wavelength increase the phenomenon that, in visible light wave range, show as
The spectral line of spectrum moves a distance, i.e. wavelength side length towards red end, and frequency reduces.
9, the pulse spacing: being the time interval of upper a pulse and next pulse.
Fig. 1 illustratively shows a kind of applicable laser display system --- the DLP(digital of the embodiment of the present invention
Light procession, referred to as digital light processing) optical projection system optical texture schematic diagram.As shown in Figure 1, DLP projection system
System optical system includes: red light semiconductor laser 101, green light semiconductor 102, blue semiconductor laser 103, expands
Beam device 104, refracting telescope 105, beam cementing prism 106, DMD(Digital Micro mirror Device, abbreviation digital micro-mirror are former
Part) chip 107 and projection lens 108.
As shown in Figure 1, red light semiconductor laser 101, green light semiconductor 102 and blue semiconductor laser
The tricolor laser light source of 103 composition DLP systems, one in DLP projection system went out in the photoperiod, when three semiconductor lasers
When the output intensity of device is almost the same, can by one go out the photoperiod be divided into three equal periods, each semiconductor laser
Device can be in a period output light, in other two periods not output light.Due to the high coherence of laser, so using
For laser as laser speckle is generally observed that in the DLP projection system of light source, the presence of laser speckle will affect display picture
Image, information quality etc..
Fig. 2 schematically illustrates one of DLP projection system and goes out photoperiod T, and, it is red light semiconductor laser, green
The drive signal waveform schematic diagram of optical semiconductor laser and blue semiconductor laser.Wherein, go out in photoperiod T at one,
The output light time span of red light semiconductor laser, green light semiconductor and blue semiconductor laser is equal.?
In practical application, go out in photoperiod T at one, red light semiconductor laser, Green-emitting semiconductor laser and blue-light semiconductor laser
The output light time span of device can also be unequal, the embodiment of the present invention to this with no restriction.
Go out in photoperiod T at one, red light semiconductor laser, green light semiconductor and blue semiconductor laser
Light emitting phase and non-light emitting phase are respectively included, when the driving signal acted on laser is high level, laser hair
Light, conversely, laser does not shine.Correspondingly, red light semiconductor laser, green light semiconductor and blue-light semiconductor laser
The drive signal waveform of device is as shown in Figure 3.In the driving signal of red light semiconductor laser, a high level and adjacent one
Low level forms a drive cycle, similarly, in the driving signal of green light semiconductor, a high level and adjacent one
A low level forms a drive cycle, in the driving signal of blue semiconductor laser, a high level and adjacent one
Low level forms a drive cycle.That is, in the drive cycle of a semiconductor laser, including high level lasting time section and
The low level duration section.
Go out in the photoperiod at one of laser, the high level stage exports laser, and the low level stage exports fluorescence or not
It shines, this is because the current value in the driving signal that the high level stage is laser input is greater than the luminous threshold of laser needs
It is worth current value, is less than laser in the current value for the driving signal that the low level stage is laser input and needs luminous threshold value electricity
Flow valuve.For same laser, since the resistance of laser is identical, so being that laser input voltage value is got in the high level stage
Height, current value also can be higher.
Semiconductor laser is pumped generally by electric current injection, and the injection of different driving currents, which will lead to, partly to be led
Different heats is generated when volumetric laser chip operation, and there is different temperature so as to cause semiconductor laser chip.Semiconductor swashs
Light device can export the light of different wave length at different temperature, and temperature is higher, and the wavelength of output light can be longer.Meanwhile half
The spectrum of conductor laser can also broaden with the increase of driving current.
Fig. 3 is exemplarily illustrated the temperature-current curve synoptic diagram of semiconductor laser provided in an embodiment of the present invention.Root
Can determine according to Fig. 3: when driving current is lower than threshold value, semiconductor laser can only emit fluorescence, only when driving current is big
When the threshold current of laser, laser could work normally output laser, swash therefore, for obtaining semiconductor laser output
Light is greater than the operating current of threshold current it is necessary to provide to semiconductor laser.Moreover, the threshold current of semiconductor laser by
The operating temperature of the influence of temperature, semiconductor laser chip is higher, and the threshold current of semiconductor laser will be higher.
In the prior art, after laser speckle is coherent light source illumination to coarse object, interference that light generates in space.
And as long as two frequencies are identical, light of constant phase difference is known as coherent light, light source is just relevant radiant.Due to laser
The laser that device generates is that frequency is identical, the identical light of phase, so the light that laser issues just is coherent light.
The coherence of laser is generally divided into temporal coherence and spatial coherence.Temporal coherence is mainly reflected in monochrome
Property, when the monochromaticjty of laser light source is better, its temporal coherence of the light of laser output will be better；When laser light source
When monochromaticjty is better, the breadth of spectrum line of the light of laser output will be narrower；And breadth of spectrum line indicates the intensity of laser output light
Download to wave-length coverage corresponding when maximum value half, i.e. the wavelength phase of the breadth of spectrum line of laser output light and laser output light
It closes, and the wavelength of laser output light is longer, breadth of spectrum line is wider, and correspondingly, the coherence of laser output light is poorer.
In this way, can be by the coherence of reduction semiconductor laser output light, to inhibit the laser in DLP display system
Speckle.
Based on the above analysis, and in view of a time span for going out the photophase of DLP projection system is several milliseconds, partly lead
The response time of body laser can achieve nanosecond order, therefore in embodiments of the present invention, by the height electricity of semiconductor laser
Driving signal in flat duration changes into multiple pulses, by the high level lasting time section of noise spectra of semiconductor lasers
Multiple pulses peak value of pulse or multiple pulses be formed by pulse spacing or the simultaneously peak value of pulse of multiple pulses
It is controlled with the pulse spacing of multiple pulse shapings, can be elongated by the wavelength of the output light of semiconductor laser, Jin Erke
To reduce the coherence of semiconductor laser output light.
Embodiment one
It is described in detail below for semiconductor laser provided in an embodiment of the present invention driving process.Fig. 4 is illustrated
A kind of semiconductor laser provided in an embodiment of the present invention drives flow diagram.The process can drive in semiconductor laser
It is realized in circuit.Referring to fig. 4, a kind of semiconductor laser provided in an embodiment of the present invention drives process, comprising the following steps:
Step 401, driving signal is generated according to the drive cycle of semiconductor laser, a drive cycle includes that high level continues
Period and the low level duration section, the driving signal in the high level lasting time section of a drive cycle is by N number of pulse
It constitutes, N is the integer greater than 1；Wherein, the peak value in N number of pulse at least there are two pulse is unequal, and/or, the N
A pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal.
Step 402, Xiang Suoshu semiconductor laser exports the driving signal.
In practical applications, the high level lasting time of a drive cycle of PWM noise spectra of semiconductor lasers can be passed through
Interior N number of pulse is adjusted, and carrys out the equivalent waveform for generating different in width.In the embodiment of the present invention, drive cycle
The pulse width of N number of pulse in high level lasting time section can all it is identical, can also part it is identical.The embodiment of the present invention
In, the pulse width of N number of pulse in the high level lasting time section of a drive cycle is not specifically limited.
In DLP projection system, there are three semiconductor lasers: red light semiconductor laser, green light semiconductor
And blue semiconductor laser.In the embodiment of the present invention, for DLP projection system, the driving signal of three semiconductor lasers
It can generate in the manner described above or the driving signal of any two semiconductor laser in three semiconductor lasers can
It generates, can also be generated in the manner described above with the driving signal of any one laser in the manner described above, correspondingly, above-mentioned stream
" semiconductor laser " in journey can be red light semiconductor laser, green light semiconductor and blue semiconductor laser
One of.
Preferably, in the embodiment of the present invention, semiconductor laser can be red light semiconductor laser.This is because half
The threshold current of conductor laser is influenced by temperature, and the temperature characterisitic of red light semiconductor laser is most obvious, it is easier to logical
The variation of control temperature is crossed to change wave-length coverage.Therefore, the coherence of red light semiconductor laser output light is reduced than reducing
The coherence of green light semiconductor and blue semiconductor laser output light is easy to accomplish.
In the embodiment of the present invention, generate in the high level lasting time section in the drive cycle of semiconductor laser by N
A pulse, since at least unequal there are two the peak value of pulse in this N number of pulse and/or this N number of pulse is formed by N-1
In pulse spacing at least there are two the pulse spacing it is unequal, thus it is possible, on the one hand, due to only in drive cycle high level continue
N number of pulse is generated in period, it is ensured that the semiconductor laser is swashed in the high level time section of its drive cycle
The transmitting of light beam, on the other hand, due in this N number of pulse at least there are two pulse peak value is unequal and/or this N number of pulse
Be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, change the wave of semiconductor laser output light
It is long, the wave-length coverage of semiconductor laser output light has been widened, laser is made to obtain the temperature of even variation on time dimension,
To obtain equally distributed laser line, finally expands the frequency difference between different laser beams, reduce laser display system
The coherence of light source in system, and then inhibit laser speckle.
Embodiment two
The realization process of embodiment two is the same as example 1 substantially, particularly, in step 401 in N number of pulse generated
When at least unequal there are two the peak value of pulse, N number of pulse, which is formed by N-1 pulse spacing, to be equal.
In embodiment two, as long as guaranteeing in N number of pulse in the high level lasting time section of a drive cycle at least
The peak value of two pulses is unequal, can usually change the operating temperature of semiconductor laser chip.In order to effectively control half
The operating temperature of conductor Laser chip increases semiconductor laser output light wavelength, in preferred embodiment provided in an embodiment of the present invention
In, the variation of the peak value of pulse of N number of pulse in the high level lasting time section of a drive cycle of semiconductor laser is advised
It then may include any one rule of following rule a1 into regular a3.
Regular a1, the peak value of N number of pulse in the high level lasting time section of a drive cycle of semiconductor laser
It is incremented by.
Further, the peak value of N number of pulse in the high level lasting time section of semiconductor laser, which can be, linearly passs
Increase, is also possible to non-linear increasing, for example can carry out according to the incremental part of Gaussian curve incremental.
Regular a2, the peak value of N number of pulse in the high level lasting time section of a drive cycle of semiconductor laser
Successively decrease.
Further, the peak value of N number of pulse in the high level lasting time section of semiconductor laser, which can be, linearly passs
Subtract, is also possible to non-linear increasing, for example can successively decrease according to the decreasing portion of Gaussian curve.
Regular a3, the peak value of N number of pulse in the high level lasting time section of a drive cycle of semiconductor laser
Change curve meet Gaussian curve.
Further, in the embodiment of the present invention, the high level lasting time of a drive cycle of noise spectra of semiconductor lasers
The rule change of the peak value of N number of pulse in section does not do specific restriction.
Specifically, the peak value of N number of pulse meets above-mentioned a1 rule and all pulse spacings are equal, that is, semiconductor laser
The peak linear of N number of pulse in the high level lasting time section of device is incremented by, and this N number of pulse is formed by between N-1 pulse
Every equal.Fig. 5 A illustrate provided in the embodiment of the present invention N number of pulse pulse spacing it is equal when, the peak of N number of pulse
It is worth the waveform diagram of linear increment.
Due to N number of peak value of pulse linear increment in the high level lasting time section of semiconductor laser, and N number of pulse institute
The N-1 pulse spacing of formation is equal, can determine semiconductor laser chip in high level lasting time section between each pulse
Will be different every generated heat, correspondingly, the operating temperature of semiconductor laser chip just has difference；Since semiconductor swashs
Light device can export the light of different wave length under different operating temperatures, and operating temperature is higher, the wavelength meeting of the light of output
It is longer；In the prior art, red shift can occur as the temperature rises for the wavelength of semiconductor laser, swash to change semiconductor
The distribution of the width and spectral line of the spectral line of light output.
It was determined that the pulse spacing of N number of pulse in the high level lasting time section of semiconductor laser is equal, and N
When a peak value of pulse linear increment, thus it is possible to vary the wavelength of the output light of semiconductor laser, and in semiconductor laser
In high level lasting time section, the wave-length coverage of semiconductor laser output light has been widened, has broadened the spectrum width of semiconductor laser,
The frequency difference between different laser beams is expanded, to reduce the coherence of semiconductor laser output light.
Further, equal when the pulse spacing of N number of pulse in the high level lasting time section of semiconductor laser, and
The peak value non-linear increasing of N number of pulse in the high level lasting time section of semiconductor laser, such as can be according to Gauss song
When the incremental part of line carries out incremental, the coherence of semiconductor laser output light can be similarly reduced.
Specifically, the peak value of N number of pulse meets above-mentioned a2 rule and all pulse spacings are equal, that is, when semiconductor swashs
The peak linear of N number of pulse in the high level lasting time section of light device successively decreases, and this N number of pulse is formed by N-1 pulse
Interval is equal.Fig. 5 B illustrate the N number of pulse provided in the embodiment of the present invention pulse spacing it is equal when, it is N number of
The waveform diagram that the peak linear of pulse successively decreases.
Due to N number of peak value of pulse linear decrease in the high level lasting time section of semiconductor laser, and N number of pulse institute
The N-1 pulse spacing of formation is equal, can determine semiconductor laser chip in high level lasting time section between each pulse
Will be different every generated heat, correspondingly, the operating temperature of semiconductor laser chip just has difference；Since semiconductor swashs
Light device can export the light of different wave length under different operating temperatures, and operating temperature is higher, the wavelength meeting of the light of output
It is longer.
It was determined that the pulse spacing of N number of pulse in the high level lasting time section of semiconductor laser is equal, and N
When the peak linear of a pulse successively decreases, thus it is possible to vary the wavelength of the output light of semiconductor laser, and in semiconductor laser
High level lasting time section in, widened the wave-length coverage of semiconductor laser output light, broadened the spectrum of semiconductor laser
Width expands the frequency difference between different laser beams, to reduce the coherence of semiconductor laser output light.
Further, equal when the pulse spacing of N number of pulse in the high level lasting time section of semiconductor laser, and
The peak value non-linear increasing of N number of pulse in the high level lasting time section of semiconductor laser, such as can be according to Gauss song
When the decreasing portion of line is successively decreased, the coherence of semiconductor laser output light can be similarly reduced.
Specifically, the peak value of N number of pulse meets above-mentioned a3 rule and all pulse spacings are equal, that is, when semiconductor swashs
The change curve of the peak value of N number of pulse in the high level lasting time section of light device meets Gaussian curve, and this N number of pulse institute shape
At N-1 pulse spacing be equal.Fig. 5 C is illustrated between the pulse of the N number of pulse provided in the embodiment of the present invention
When equal, the change curve of the peak value of N number of pulse meets the waveform diagram of Gaussian curve.
Since the change curve of the peak value of the pulse in the high level lasting time section of semiconductor laser meets Gauss song
Line, and to be formed by N-1 pulse spacing same pulse interval identical for N number of pulse, and semiconductor laser chip can be determined in height
Heat caused by each pulse spacing will be different in level duration section, accordingly, the work of semiconductor laser chip
Making temperature just has difference；Since semiconductor laser is under different operating temperatures, the light of different wave length can be exported, and
Operating temperature is higher, and the wavelength of the light of output can be longer.
It was determined that the pulse spacing of N number of pulse in the high level lasting time section of semiconductor laser is equal, and N
The change curve of the peak line of a pulse meets Gaussian curve, thus it is possible to vary the wavelength of the output light of semiconductor laser, and
In the high level lasting time section of semiconductor laser, the wave-length coverage of semiconductor laser output light, broadening half have been widened
The spectrum width of conductor laser expands the frequency difference between different laser beams, to reduce semiconductor laser output light
Coherence.
Further, in the embodiment of the present invention, when N number of pulse in the high level lasting time section of semiconductor laser
When pulse spacing is equal, as long as the coherence of semiconductor laser output light can be reduced, the high level of noise spectra of semiconductor lasers
The rule change of the peak value of N number of pulse in duration does not do specific restriction.
In the embodiment of the present invention, it is made of what is generated in the high level lasting time section of semiconductor laser N number of pulse
Driving signal, export to semiconductor laser.Since at least there are two pulses in N number of pulse in high level lasting time section
Peak value it is unequal, so, by change high level lasting time section in peak value of pulse, can control semiconductor laser chip
Operating temperature, to change the wavelength of semiconductor laser output light.In laser display system, due to changing laser half
The wavelength of conductor output light has widened the wave-length coverage of semiconductor laser output light, has obtained laser on time dimension
The temperature of even variation to obtain equally distributed laser line, while broadening the spectrum width of semiconductor laser as far as possible,
Expand the frequency difference between different laser beams, to reduce the coherence of semiconductor laser output light, that is, inhibits sharp
Light speckle.Compared with increasing dissipation spot device in Optical Maser System in the prior art, the embodiment of the present invention has system structure
Simply, the characteristics of and reducing system cost.
Embodiment three
The realization process of embodiment three is the same as example 1 substantially, particularly, N number of pulse institute produced in step 401
When the N-1 pulse spacing of formation is unequal, N number of peak value of pulse can be equal.
N number of pulse form in embodiment three, in the high level lasting time section of a drive cycle of semiconductor laser
At N-1 pulse spacing at least there are two the pulse spacing it is unequal when, the change in N-1 pulse spacing of N number of pulse shaping
Changing rule may include any one rule of following rule b1 into regular b3:
Regular b1, N-1 of N number of pulse shaping in the high level lasting time section of a drive cycle of semiconductor laser
Pulse spacing is incremented by.
Further, between N-1 pulse of N number of pulse shaping in the high level lasting time section of semiconductor laser
Every can be linear increment, it is also possible to non-linear increasing, for example can carry out according to the incremental part of Gaussian curve incremental.
Regular b2, N number of pulse shaping in the high level lasting time section of a drive cycle of semiconductor laser
N-1 pulse spacing successively decreases.
Further, the N-1 pulse spacing of N number of pulse shaping in the high level lasting time section of semiconductor laser
It can be linear decrease, be also possible to non-linear increasing, for example can successively decrease according to the decreasing portion of Gaussian curve.
Regular b3, N number of pulse shaping in the high level lasting time section of a drive cycle of semiconductor laser
The change curve in N-1 pulse spacing meets Gaussian curve.
Further, in the embodiment of the present invention, the high level lasting time of a drive cycle of noise spectra of semiconductor lasers
The rule change in N-1 pulse spacing of N number of pulse shaping in section does not do specific restriction.
Specifically, N number of pulse is formed by that the pulse spacing meets above-mentioned b1 rule and all peak value of pulses are equal, that is,
When the pulse spacing linear increment of N number of pulse shaping in the high level lasting time section of semiconductor laser, and this N number of pulse
Peak value it is equal.Fig. 6 A illustrate the embodiment of the present invention topic provide N number of peak value of pulse it is equal when, N number of pulse institute shape
At N-1 pulse spacing linear increment waveform diagram.
It is since N number of pulse in the high level lasting time section of semiconductor laser is formed by N-1 pulse spacing
Linear increment, and the peak value of N number of pulse is equal, can determine semiconductor laser chip each arteries and veins in high level lasting time section
Punching is spaced generated heat will be different, and the operating temperature of corresponding semiconductor laser chip just has difference；Due to partly leading
Body laser can export the light of different wave length under different operating temperatures, and operating temperature is higher, the wave of the light of output
Long meeting is longer.
It was determined that N number of pulse in the high level lasting time section of semiconductor laser is formed by between N-1 pulse
Every linear increment, and N number of pulse peak value it is equal when, thus it is possible to vary the wavelength of the output light of semiconductor laser, and half
In the high level lasting time section of conductor laser, the wave-length coverage of semiconductor laser output light has been widened, has broadened semiconductor
The spectrum width of laser expands the frequency difference between different laser beams, to reduce the phase of semiconductor laser output light
Stemness.
Further, when N number of pulse in the high level lasting time section in a drive cycle of semiconductor laser
Peak value is equal, and to be formed by N-1 pulse spacing non-thread for N number of pulse in the high level lasting time section of semiconductor laser
Property be incremented by, for example when can carry out incremental according to the incremental part of Gaussian curve, it is defeated can similarly to reduce semiconductor laser
The coherence of light out.
Specifically, N number of pulse is formed by that the pulse spacing meets above-mentioned b2 rule and all peak value of pulses are equal, that is,
When the pulse spacing linear decrease of N number of pulse shaping in the high level lasting time section of semiconductor laser, and this N number of pulse
Peak value it is equal.Fig. 6 B illustrate the embodiment of the present invention topic provide N number of pulse peak value it is equal when, N number of pulse institute
The waveform diagram of N-1 pulse spacing linear decrease of formation.
It is since N number of pulse in the high level lasting time section of semiconductor laser is formed by N-1 pulse spacing
Linear decrease, and the peak value of N number of pulse is equal, can determine semiconductor laser chip each arteries and veins in high level lasting time section
Punching is spaced generated heat will be different, and the operating temperature of corresponding semiconductor laser chip just has difference；Due to partly leading
Body laser can export the light of different wave length under different operating temperatures, and operating temperature is higher, the wave of the light of output
Long meeting is longer；In the prior art, red shift can occur as the temperature rises for the wavelength of semiconductor laser, partly lead to change
The distribution of the width and spectral line of the spectral line of volumetric laser output.
It was determined that N number of pulse in the high level lasting time section of semiconductor laser is formed by between N-1 pulse
Every linear decrease, and N number of pulse peak value it is equal when, thus it is possible to vary the wavelength of the output light of semiconductor laser, and half
In the high level lasting time section of conductor laser, the wave-length coverage of semiconductor laser output light has been widened, has broadened semiconductor
The spectrum width of laser expands the frequency difference between different laser beams, to reduce the phase of semiconductor laser output light
Stemness.
Further, when N number of pulse in the high level lasting time section in a drive cycle of semiconductor laser
Peak value is equal, and to be formed by N-1 pulse spacing non-thread for N number of pulse in the high level lasting time section of semiconductor laser
Property be incremented by, for example when can be successively decreased according to the decreasing portion of Gaussian curve, it is defeated can similarly to reduce semiconductor laser
The coherence of light out.
Specifically, N number of pulse is formed by that the pulse spacing meets above-mentioned b3 rule and all peak value of pulses are equal, that is, works as
The change curve in the pulse spacing of N number of pulse shaping in the high level lasting time section of semiconductor laser meets Gauss song
Line, and the peak value of this N number of pulse is equal.Fig. 6 C illustrates the peak value phase for N number of pulse that topic of the embodiment of the present invention provides
Whens equal, the change curve that N number of pulse is formed by N-1 pulse spacing meets the waveform diagram of Gaussian curve.
Since N number of pulse in the high level lasting time section of semiconductor laser is formed by N-1 pulse spacing
It is linear that change curve, which meets Gaussian curve, and the peak value of N number of pulse is equal, and semiconductor laser chip can be determined in high level
Heat caused by each pulse spacing will be different in duration, and the operating temperature of corresponding semiconductor laser chip is just
With difference；Since semiconductor laser is under different operating temperatures, the light of different wave length, and operating temperature can be exported
Higher, the wavelength of the light of output can be longer.
It was determined that N number of pulse in the high level lasting time section of semiconductor laser is formed by between N-1 pulse
Every being linear decrease, and N number of pulse peak value it is equal when, thus it is possible to vary the wavelength of the output light of semiconductor laser, and
In the high level lasting time section of semiconductor laser, the wave-length coverage of semiconductor laser output light is widened, broadening is partly led
The spectrum width of body laser expands the frequency difference between different laser beams, to reduce semiconductor laser output light
Coherence, to reduce the coherence of semiconductor laser output light.
In the embodiment of the present invention, it is made of what is generated in the high level lasting time section of semiconductor laser N number of pulse
Driving signal, export to semiconductor laser.Since N number of pulse in high level lasting time section is formed by N-1 arteries and veins
Punching interval at least there are two the pulse spacing it is unequal, so by change high level lasting time section in pulse spacing, can
To control the operating temperature of semiconductor laser chip, to change the wavelength of semiconductor laser output light.In laser display system
In system, due to changing the wavelength of laser semiconductor output light, the wave-length coverage of semiconductor laser output light is widened, has made to swash
Light device obtains the temperature of even variation on time dimension, to obtain equally distributed laser line, while opening up as far as possible
The spectrum width of wide semiconductor laser expands the frequency difference between different laser beams, to reduce semiconductor laser output
The coherence of light, that is, inhibit laser speckle.Compared with increasing dissipation spot device in Optical Maser System in the prior art, this hair
Bright embodiment has system structure simple, and the characteristics of reduce system cost.
Example IV
The realization process of example IV is the same as example 1 substantially, particularly, is formed by N number of pulse in step 401
At least there are two pulse peak value it is unequal when, N number of pulse be formed by N-1 pulse spacing can also at least there are two arteries and veins
Punching interval is unequal.
In example IV, N number of pulse in the high level lasting time section of a drive cycle of semiconductor laser
The rule change of peak value of pulse may include any one rule of rule a1 into regular a3 in embodiment two；Semiconductor laser
In the N-1 pulse spacing of N number of pulse shaping in the high level lasting time section of one drive cycle of device at least there are two
When pulse spacing is unequal, the rule change in N-1 pulse spacing of N number of pulse shaping may include rule b1 in embodiment three
Any one rule into regular b3.
Specifically, the peak value of N number of pulse meets above-mentioned a1 rule and N number of pulse is formed by pulse spacing line and meets
B1 rule is stated, i.e., the peak linear of N number of pulse in the high level lasting time section of semiconductor laser is incremented by, and this N number of arteries and veins
Punching is formed by N-1 pulse spacing linear increment.Fig. 7 A, which is illustrated, provides the peak of N number of pulse in the embodiment of the present invention
When being worth linear increment, N number of pulse is formed by the waveform diagram of N-1 pulse spacing linear increment.
Since the peak value of N number of pulse in the high level lasting time section of semiconductor laser is linear increment, and N number of arteries and veins
The N-1 pulse spacing that punching is formed is also linear increment, and semiconductor laser chip can be determined in high level lasting time section
Heat caused by interior each pulse spacing will be different, but since semiconductor laser is every in high level lasting time section
A pulse spacing is linear increment, so, it will lead to the heat that semiconductor laser chip generates in high level lasting time section
Amount tends to be equal.Due to laser spectrum and temperature be it is stringent positively related, when temperature is uniformly distributed formula, semiconductor laser
The spectrum of output can be also uniformly distributed.
It was determined that the peak linear of N number of pulse in the high level lasting time section of semiconductor laser is incremented by, and N
N-1 pulse spacing of a pulse shaping also linear increment has widened the wave-length coverage of semiconductor laser output light, broadening half
The spectrum width of conductor laser expands the frequency difference between different laser beams, to reduce semiconductor laser output light
Coherence.
Further, when the peak value of N number of pulse in the high level lasting time section of semiconductor laser is according to Gauss song
The incremental part of line carries out incremental, and N-1 pulse spacing non-linear increasing of N number of pulse shaping, such as can be according to Gauss
When the incremental part of curve carries out incremental, the coherence of semiconductor laser output light can be similarly reduced.
Specifically, the peak value of N number of pulse meets above-mentioned a2 rule and N number of pulse is formed by pulse spacing line and meets
B2 rule is stated, i.e. the peak linear of N number of pulse in the high level lasting time section of semiconductor laser successively decreases, and this N number of arteries and veins
Punching is formed by N-1 pulse spacing linear decrease.Fig. 7 B, which is illustrated, provides the peak of N number of pulse in the embodiment of the present invention
When being worth linear decrease, N number of pulse is formed by the waveform diagram of N-1 pulse spacing linear decrease.
Since the peak linear of N number of pulse in the high level lasting time section of semiconductor laser successively decreases, and N number of pulse
N-1 pulse spacing of formation also linear decrease can determine that semiconductor laser chip is each in high level lasting time section
Heat caused by pulse spacing will be different, due to semiconductor laser in high level lasting time section each pulse spacing
It is linear decrease, so, will lead to the heat that semiconductor laser chip generates in high level lasting time section is to tend to phase
Deng.Due to laser spectrum and temperature be it is stringent positively related, when temperature is uniformly distributed formula, the spectrum of semiconductor laser output
It can be uniformly distributed.
It was determined that the peak linear of N number of pulse in the high level lasting time section of semiconductor laser successively decreases, and N
N-1 pulse spacing of a pulse shaping also linear increment has widened the wave-length coverage of semiconductor laser output light, broadening half
The spectrum width of conductor laser expands the frequency difference between different laser beams, to reduce semiconductor laser output light
Coherence.
Further, when the peak value of N number of pulse in the high level lasting time section of semiconductor laser is according to Gauss song
The decreasing portion of line is successively decreased, and N-1 pulse spacing non-linear increasing of N number of pulse shaping, such as can be according to Gauss
When the decreasing portion of curve is successively decreased, the coherence of semiconductor laser output light can be similarly reduced.
In the embodiment of the present invention, it is made of what is generated in the high level lasting time section of semiconductor laser N number of pulse
Driving signal, export to semiconductor laser.Since at least there are two pulses in N number of pulse in high level lasting time section
Peak value and N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal.So passing through
The peak value of pulse in high level lasting time section and pulse spacing are changed simultaneously, can control the work temperature of semiconductor laser chip
Degree, to change the wavelength of semiconductor laser output light.In laser display system, due to changing laser semiconductor output
The wavelength of light has widened the wave-length coverage of semiconductor laser output light, laser is made to obtain even variation on time dimension
Temperature, to obtain equally distributed laser line, while broadening the spectrum width of semiconductor laser as far as possible, expand different
Frequency difference between laser beam inhibits laser speckle to reduce the coherence of semiconductor laser output light.With
Increasing dissipation spot device in Optical Maser System in the prior art to compare, the embodiment of the present invention has system structure simple, and
The characteristics of reducing system cost.
Embodiment five
Based on same idea, embodiment five provides a kind of semiconductor laser device driving circuit.Fig. 8 illustrates the application implementation
A kind of semiconductor laser device driving circuit that example provides, including signal generation unit 81 and signal output unit 82.
Signal generation unit 81, for generating driving signal, a driving week according to the drive cycle of semiconductor laser
Phase includes high level lasting time section and the low level duration section, the drive in the high level lasting time section of a drive cycle
Dynamic signal is made of N number of pulse, and N is the integer greater than 1；Wherein, at least there are two the peak value not phases of pulse in N number of pulse
Deng, and/or, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal.
Signal output unit 82, for exporting the driving signal to the semiconductor laser.
Preferably, the peak value in N number of pulse at least there are two pulse is unequal, comprising:
The peak value of N number of pulse successively decreases；Or
The peak value of N number of pulse is incremented by；Or
The change curve of the peak value of N number of pulse meets Gaussian curve.
Preferably, N number of pulse is formed by when at least unequal there are two the peak value of pulse in N number of pulse
N-1 pulse spacing is equal.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, packet
It includes:
N number of pulse is formed by N-1 pulse spacing and successively decreases；Or
It is incremental that N number of pulse is formed by N-1 pulse spacing；Or
The change curve that N number of pulse is formed by N-1 pulse spacing meets Gaussian curve.
Preferably, N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal when,
The peak value of N number of pulse is equal.
Preferably, described be incremented by linear increment.
Preferably, described be decremented to linear decrease.
Preferably, the semiconductor laser is red light semiconductor laser.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, all essences in the application
Within mind and principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.
Obviously, those skilled in the art can carry out various modification and variations without departing from the essence of the application to the application
Mind and range.In this way, if these modifications and variations of the application belong to the range of the claim of this application and its equivalent technologies
Within, then the application is also intended to include these modifications and variations.
Claims (11)
1. a kind of semiconductor laser drive method characterized by comprising
According to the drive cycle of semiconductor laser generate driving signal, a drive cycle include high level lasting time section and
The low level duration section, the driving signal in the high level lasting time section of a drive cycle are made of N number of pulse, and N is
The pulse width of integer greater than 1, N number of pulse is identical；
N number of peak value of pulse is equal and N number of pulse is formed by N-1 pulse spacing at least there are two arteries and veins
Punching interval is unequal；
Alternatively, N number of pulse be formed by N-1 pulse spacing be equal and N number of pulse at least there are two arteries and veins
The peak value of punching is unequal；
Alternatively, N number of pulse is formed by N-1 pulse spacing at least, there are two the pulse spacing is unequal and described N number of
Peak value in pulse at least there are two pulse is unequal,
The driving signal is exported to the semiconductor laser.
2. driving method as described in claim 1, which is characterized in that
The semiconductor laser is red light semiconductor laser or green semiconductor laser or blue semiconductor laser.
3. driving method as described in claim 1, which is characterized in that
N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, comprising:
N number of pulse is formed by N-1 pulse spacing and successively decreases；Or
It is incremental that N number of pulse is formed by N-1 pulse spacing；Or
The change curve that N number of pulse is formed by N-1 pulse spacing meets Gaussian curve.
4. driving method as described in claim 1, which is characterized in that
Peak value in N number of pulse at least there are two pulse is unequal, comprising:
The peak value of N number of pulse successively decreases；Or
The peak value of N number of pulse is incremented by；Or
The change curve of the peak value of N number of pulse meets Gaussian curve.
5. the driving method as described in Claims 1-4 is any, which is characterized in that when the high level of a drive cycle continues
Interior N number of pulse is adjusted by PMW.
6. the driving method as described in Claims 1-4, which is characterized in that the high level lasting time of a drive cycle is
The light emitting phase of the semiconductor laser.
7. a kind of semiconductor laser device driving circuit characterized by comprising
Signal generation unit, for generating driving signal according to the drive cycle of semiconductor laser, a drive cycle includes
High level lasting time section and the low level duration section, the driving signal in the high level lasting time section of a drive cycle
It is made of N number of pulse, N is the integer greater than 1, and the pulse width of N number of pulse is identical；
N number of peak value of pulse is equal and N number of pulse is formed by N-1 pulse spacing at least there are two arteries and veins
Punching interval is unequal；
Alternatively, N number of pulse be formed by N-1 pulse spacing be equal and N number of pulse at least there are two arteries and veins
The peak value of punching is unequal；
Alternatively, N number of pulse is formed by N-1 pulse spacing at least, there are two the pulse spacing is unequal and described N number of
Peak value in pulse at least there are two pulse is unequal；
Signal output unit, for exporting the driving signal to the semiconductor laser.
8. driving circuit as claimed in claim 7, which is characterized in that the semiconductor laser is red light semiconductor laser
Or green semiconductor laser or blue semiconductor laser.
9. driving circuit as claimed in claim 7, which is characterized in that
N number of pulse be formed by N-1 pulse spacing at least there are two the pulse spacing it is unequal, comprising:
N number of pulse is formed by N-1 pulse spacing and successively decreases；Or
It is incremental that N number of pulse is formed by N-1 pulse spacing；Or
The change curve that N number of pulse is formed by N-1 pulse spacing meets Gaussian curve.
10. driving circuit as claimed in claim 6, which is characterized in that at least there are two the peak values of pulse in N number of pulse
It is unequal, comprising:
The peak value of N number of pulse successively decreases；Or
The peak value of N number of pulse is incremented by；Or
The change curve of the peak value of N number of pulse meets Gaussian curve.
11. driving method the method according to any one of claims 7 to 10, which is characterized in that the high level of a drive cycle continues
N number of pulse in time is adjusted by PMW.
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| CN109462135A (en) * | 2018-12-26 | 2019-03-12 | 昂纳信息技术（深圳）有限公司 | A kind of the amplification output method and system of optical signal |
| CN112234431A (en) * | 2020-08-31 | 2021-01-15 | 深圳博升光电科技有限公司 | Method and unit for driving laser device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110007551A (en) | 2019-07-12 |
| CN110112647A (en) | 2019-08-09 |
| CN106410602B (en) | 2019-07-05 |
| CN110112647B (en) | 2021-05-18 |
| CN110061421B (en) | 2021-05-18 |
| CN110007551B (en) | 2021-05-18 |
| CN106410602A (en) | 2017-02-15 |
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