CN110061109A - A kind of porous GaN conduction DBR and preparation method thereof - Google Patents
A kind of porous GaN conduction DBR and preparation method thereof Download PDFInfo
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- CN110061109A CN110061109A CN201910342832.4A CN201910342832A CN110061109A CN 110061109 A CN110061109 A CN 110061109A CN 201910342832 A CN201910342832 A CN 201910342832A CN 110061109 A CN110061109 A CN 110061109A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 173
- 239000000758 substrate Substances 0.000 claims abstract description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000006056 electrooxidation reaction Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 239000012266 salt solution Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 3
- 230000003628 erosive effect Effects 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 107
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004153 renaturation Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of porous GaN conduction DBR and preparation method thereof, including substrate, buffer layer, unintentional doped gan layer, the intentional doped gallium nitride layer of N-shaped and the porous GaN conduction DBR layer successively grown from bottom to top；The porous GaN conduction DBR layer is alternately stacked and is formed by the porous GaN layer of high hole rate and the porous GaN layer of low hole ratio.Lattice mismatch issue, stable structure is not present in the present invention, and porous GaN conduction DBR layer has the characteristics that high reflectance, good conductivity, central wavelength are adjustable.
Description
Technical field
The present invention relates to a kind of porous GaN conduction DBR and preparation method thereof, belong to field of photoelectric technology.
Background technique
Tri-nitride semiconductor material with wide forbidden band is since its forbidden bandwidth is big, can cover from infrared to ultraviolet band, hit
The unique physical characteristics such as field strength big, high temperature resistant, acid and alkali-resistance are worn in the photoelectrons such as illumination, display and medical treatment and field of power electronics
It is widely used.As the research of gallium nitride material and device deepens continuously, gallium nitride opto-electronic device will be applied
To more photoelectric fields, such as high-end illumination, optical communication, laser display.Therefore, pass through the high reflectance of further investigation preparation
The structure of conductive DBR, which designs and develops out the technology that one kind is simple, inexpensive, has very important scientific meaning and application value.
Stress caused by being mismatched for nitride DBR, the AlGaN/GaN dbr structure of AlN/GaN system due to lattice will
It causes DBR to crack, while AlGaN material electric conductivity is poor, influences the photoelectric properties of device.Although in AlInN/GaN DBR
It can make AlInN and GaN Lattice Matching by adjusting Al and In ratio, but since the speed of growth of AlInN is slower, and AlGaN,
AlInN and GaN refraction coefficient relatively, generally requires tens couple of 1/4 λ thickness A lGaN/GaN, when the growth for needing to grow very much
Between, therefore DBR growth procedure is complicated, condition is harsh and repetitive rate is not high.
The GaN/Air structure DBR for selecting the GaN layer of electrochemical etching technology etching conductive by electrical conductance to prepare,
Highest reflectivity is 50% or more, but GaN/Air structure dbr structure is unstable, non-conductive.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of porous GaN conduction DBR and preparation method thereof, and there is no crystalline substances
Lattice mismatch problems, stable structure, and porous GaN conduction DBR layer have high reflectance, good conductivity, the adjustable spy of central wavelength
Point.
Term is explained:
DBR (distributed Bragg reflection) is called distributed bragg reflector mirror, by two kinds of different foldings
The material for penetrating rate is alternately arranged the periodic structure formed in the way of ABAB, and the optical thickness of every layer material is center reflection wavelength
1/4.
The invention adopts the following technical scheme:
A kind of porous GaN conduction DBR, including successively grow from bottom to top substrate, buffer layer, unintentional doped gan layer,
The intentional doped gallium nitride layer of N-shaped and porous GaN conduction DBR layer；
The porous GaN conduction DBR layer is alternately stacked shape by the porous GaN layer of high hole rate and the porous GaN layer of low hole ratio
At the period is preferably greater than 5, and high hole rate refers to hole ratio 30% or more, and low hole ratio refers to hole ratio (packet below 20%
0 is included, i.e., without hole), hole of the invention is that air hole (forms hole through electrochemical corrosion after semiconductor doping, in hole
Full of air), the introducing of air hole will make to generate certain refringence between porous GaN layer.
Reflectivity of the porous GaN conduction DBR layer near glow peak is more than 50%, and passes through regulating course thickness and period
The changeable peak strength of number, halfwidth and wavelength, such as increase (weight doping) thickness degree, periodicity can be such that peak strength increases
Add, halfwidth increase, wavelength moves right, but changes different parameters increase degree difference, can design the DBR period as needed
Number, thickness degree.
Preferably, the porous GaN conduction DBR layer includes the porous GaN layer of 5 pairs or more the high hole rates being alternately stacked and low
The porous GaN layer of hole ratio.
Preferably, the dopant of the n-type doping GaN layer is silicon or germanium, and doping concentration is 1 × 1018~5 × 1019cm-3,
Preferably 3 × 1018cm-3。
Preferably, the porous GaN layer of the high hole rate and the porous GaN layer of low hole ratio are that electrochemical corrosion is respectively adopted
Method is lightly doped GaN layer with N-shaped to the N-shaped heavy doping GaN layer being alternately stacked and is corroded to obtain, and GaN layer is lightly doped in the N-shaped
Dopant with N-shaped heavy doping GaN layer is silicon or germanium.
The present invention alternating GaN layer different using high low doping concentration, is corroded by selective electrochemical, makes shape after corrosion
At porous GaN conduction DBR layer have the characteristics that high reflectance, good conductivity, central wavelength are adjustable.
Preferably, the doping concentration of N-shaped heavy doping GaN layer is 5 × 1018~1 × 1020cm-3, preferably 1 × 1019cm-3,
The doping concentration that GaN layer is lightly doped in N-shaped is 1 × 1016~5 × 1018cm-3, preferably 5 × 1016cm-3。
Preferably, the porous GaN conduction DBR layer incorporates indium or aluminium component, material can for GaN, AlGaN,
InGaN or AlInGaN.
Preferably, the aperture of the porous GaN conduction DBR layer is 1nm~300nm, the porous GaN layer of high hole rate and low hole
The pore size of the porous GaN layer of hole rate is the same, is above range.
Preferably, the buffer layer is unintentional doping GaN or AlN.
Preferably, the substrate is sapphire, silicon, silicon carbide (SiC) or glass, and the structure of substrate is plane or figure.
A kind of preparation method of porous GaN conduction DBR, comprising the following steps:
(1) grown buffer layer and unintentional doped gan layer on substrate；
(2) the growing n-type doped gan layer in unintentional doped gan layer；
(3) the N-shaped heavy doping GaN layer that 5 pairs or more are alternately stacked is grown in n-type doping GaN layer, and GaN is lightly doped with N-shaped
Layer；
(4) GaN layer is lightly doped to the N-shaped heavy doping GaN layer and N-shaped that are alternately stacked using the method for electrochemical corrosion to carry out
Corrosion forms the multicycle porous GaN conduction DBR that the porous GaN layer of high hole rate and low hole ratio GaN layer overlap.The present invention is
Longitudinal corrosion, is lightly doped GaN layer for N-shaped heavy doping GaN layer and N-shaped and corrodes hole out, and preparation method is simple, reduce at
This, doping concentration is higher, and it is higher to form hole ratio.
Preferably, corroded in step (4) using selective electrochemical etchant solution, closed according to the different selections of material
Suitable selective electrochemical etchant solution, selective electrochemical etchant solution are weak acid, weak base or neutral salt solution, preferably hydrogen
Sodium oxide molybdena, hydrochloric acid, sodium chloride or sodium nitrate etc..
The present invention in weak acid, weak base or neutral salt solution by carrying out selective electrochemical corrosion, optionally in n
30% air hole formed above in type heavy doping GaN layer, thus change the effective refractive index of the layer material, and N-shaped is lightly doped
Then 20% air hole formed below, the introducing of air hole will make to generate certain refringence between porous GaN layer layer.
In the present invention, prior art progress is can be used in not detailed place.
The invention has the benefit that
Porous GaN conduction DBR of the invention can fundamentally solve the art wall of GaN dbr structure electric conductivity difference
It builds.Corrode the periodic structure that lightly-doped layer and heavily doped layer are alternately stacked by selective electrochemical, optionally in N-shaped
The porous GaN of high hole rate is formed in heavy doping GaN layer, changes the effective refractive index of the layer material significantly, and GaN is lightly doped in N-shaped
The effective refractive index of layer changes smaller (or not changing), so that very big refringence is formed, and to the Conductivity of structure
Less, to form the conductive DBR that the porous GaN layer of high hole rate and the porous GaN layer of low hole ratio are alternately stacked.
Porous GaN conduction DBR of the invention only needs the GaN of doping concentration periodic modulation, is corroded using selective electrochemical
Preparation forms porous GaN conduction dbr structure, lattice mismatch issue is not present, reflectivity easily reaches 90% or more, and can weigh
Renaturation is high, realizes that process is simple, is conducive to practical application.Porous GaN conduction dbr structure can be by modulating the porous GaN of high hole rate
Layer and low hole ratio or the structural parameters and preparation process of non-porous GaN layer reach good electric conductivity, effectively improve GaN resonance
The performance of chamber opto-electronic device, and its preparation process is simplified, by adjusting each thickness degree of DBR and periodicity, peak value is adjusted
Intensity, halfwidth and wavelength, to meet design and requirement of the field of photoelectric technology to optical device.
The present invention is longitudinal corrosion, only needs epitaxially grown layer structure then to corrode, preparation method is simple, reduces cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of porous GaN conduction DBR of the invention；
Fig. 2 is the preparation method schematic diagram that porous GaN conduction of the invention divides DBR；
Fig. 3 is the cross sectional Scanning Electron microscope signal of porous GaN conduction dbr structure of the invention at 200,000 times of amplification
Figure；
Fig. 4 is the reflection spectrogram and analog result figure of Fig. 3；
Fig. 5 is reflectivity under porous GaN conduction DBR thickness different situations with wavelength change schematic diagram；
Fig. 6 is that the Current Voltage of different porous GaN conduction DBR samples changes schematic diagram；
Wherein, 10- substrate, 11- buffer layer, the unintentional doped gan layer of 12-, the intentional doped gallium nitride layer of 13-n type, 14-
Porous GaN conduction DBR layer.
Specific embodiment:
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail, but is not limited only to this, what the present invention did not elaborated, presses this field routine techniques.
Embodiment 1:
A kind of porous GaN conduction DBR, as shown in Figure 1, including the substrate 10 successively grown from bottom to top, buffer layer 11, non-
Intentional doped gan layer 12, the intentional doped gallium nitride layer 13 of N-shaped and porous GaN conduction DBR layer 14；
Porous GaN conduction DBR layer 14 is alternately stacked by the porous GaN layer of 15 pairs of high hole rates and the porous GaN layer of low hole ratio
It is formed, the hole ratio of the porous GaN layer of high hole rate is 52%, and the hole ratio of the low porous GaN layer of hole ratio is in 0 (i.e. without hole).
Embodiment 2:
A kind of porous GaN conduction DBR, structure is as described in Example 1, unlike, the dopant of n-type doping GaN layer 13
For silicon, doping concentration is 3 × 1018cm-3。
Embodiment 3:
A kind of porous GaN conduction DBR, structure is as described in Example 1, unlike, the porous GaN layer of high hole rate and low hole
Rate porous GaN layer in hole is that the N-shaped heavy doping GaN layer being alternately stacked is lightly doped with N-shaped for the method that electrochemical corrosion is respectively adopted
GaN layer is corroded to obtain, and it is silicon that GaN layer and the dopant of N-shaped heavy doping GaN layer, which is lightly doped, in N-shaped, and doping concentration is higher, shape
It is higher at hole ratio, as shown in figure 3, the cross sectional Scanning Electron microscope for porous GaN conduction dbr structure at 200,000 times of amplification
Schematic diagram, the hole that the N-shaped heavy doping GaN layer after electrochemical corrosion is formed is more uniform, and aperture is between 1~300nm；And not
The GaN layer of corrosion is that N-shaped is lightly doped GaN layer, and materials at two layers is alternately stacked shape since there are refringences for the introducing of air hole
At porous GaN conduction DBR layer 14, Fig. 4 is the reflection spectrogram and analog result figure of Fig. 3, and abscissa is wavelength, and ordinate is anti-
Rate is penetrated, solid line indicates the analogue value, and dotted line indicates measured value, it is seen that porous GaN conduction DBR layer 14 is near 467nm
Reach reflectance peak, and there is wider reflection band.
In the present embodiment, the doping concentration of N-shaped heavy doping GaN layer is 1 × 1019cm-3, mixing for GaN layer is lightly doped in N-shaped
Miscellaneous concentration is 5 × 1016cm-3。
Fig. 5 is that for reflectivity with wavelength change schematic diagram, abscissa is wavelength under porous GaN conduction DBR thickness different situations,
Ordinate is reflectivity, and curve is respectively former porous GaN conduction DBR layer, the increase of porous GaN conduction DBR layer from the bottom to top in figure
20nm, porous GaN conduction DBR layer increase 40nm, porous GaN conduction DBR layer increases 60nm, it can be seen from the figure that passing through tune
Save porous 14 thickness of GaN conduction DBR layer or periodicity, adjustable peak strength, halfwidth and wavelength.
Embodiment 4:
A kind of porous GaN conduction DBR, structure is as described in Example 1, unlike, 14 holes of porous GaN conduction DBR layer
Diameter is between 1~300nm.
Embodiment 5:
A kind of porous GaN conduction DBR, structure is as described in Example 1, unlike, buffer layer 11 is low temperature GaN forming core layer
Using high pure nitrogen as nitrogen source, trimethyl gallium or triethyl-gallium are the source Ga, low-temperature epitaxy GaN forming core layer；Substrate 10 is sapphire.
Embodiment 6:
A kind of preparation method of porous porous GaN conduction DBR, as shown in Figure 2, comprising the following steps:
(1) grown buffer layer 11 and unintentional doped gan layer 12 on substrate 10；
(2) the growing n-type doped gan layer 13 in unintentional doped gan layer 12；
(3) 15 pairs of N-shaped heavy doping GaN layers being alternately stacked are grown in n-type doping GaN layer 13 and GaN is lightly doped in N-shaped
Layer；
(4) GaN layer is lightly doped to the N-shaped heavy doping GaN layer and N-shaped that are alternately stacked using the method for electrochemical corrosion to carry out
Corrosion forms the multicycle porous GaN conduction DBR that the porous GaN layer of high hole rate and low hole ratio GaN layer overlap.The present invention is
Longitudinal corrosion, is lightly doped GaN layer for N-shaped heavy doping GaN layer and N-shaped and corrodes hole out, and preparation method is simple, reduce at
This, doping concentration is higher, and it is higher to form hole ratio.
Corroded in step (4) using selective electrochemical etchant solution, the selective electrochemical corrosion of the present embodiment
Solution selects sodium nitrate, and the aperture of obtained porous GaN conduction DBR layer 14 is 1~300nm, the reflectivity near glow peak
90% or more.
Fig. 6 is that the Current Voltage of different porous GaN conduction DBR samples changes schematic diagram, and abscissa is voltage, and ordinate is
Electric current, upper left corner legend successively indicates from the top down in figure: the DBR that not eroded DBR sample, corrosion potentials are formed when being 15V
The voltage-current curve for the DBR sample that DBR sample, the corrosion potentials that sample, corrosion potentials are formed when being 18V are formed when being 22V,
It is seen that the current curve of the porous GaN conduction DBR formed after selective electrochemical corrosion is with not eroded DBR's
Current curve difference is not that especially greatly, i.e. selective electrochemical corrosion is little to the Conductivity of structure.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of porous GaN conduction DBR, which is characterized in that including the substrate, buffer layer, unintentional successively grown from bottom to top
The intentional doped gallium nitride layer of doped gan layer, N-shaped and porous GaN conduction DBR layer；
The porous GaN conduction DBR layer is alternately stacked and is formed by the porous GaN layer of high hole rate and the porous GaN layer of low hole ratio.
2. porous GaN conduction DBR according to claim 1, which is characterized in that the porous GaN conduction DBR layer includes 5
To the porous GaN layer of the high hole rate being alternately stacked above and the porous GaN layer of low hole ratio.
3. porous GaN conduction DBR according to claim 1, which is characterized in that the dopant of the n-type doping GaN layer is
Silicon or germanium, doping concentration are 1 × 1018~5 × 1019cm-3。
4. porous GaN conduction DBR according to claim 1, which is characterized in that the porous GaN layer of the high hole rate and low
The porous GaN layer of hole ratio is that the method that electrochemical corrosion is respectively adopted gently mixes the N-shaped heavy doping GaN layer being alternately stacked with N-shaped
Miscellaneous GaN layer is corroded to obtain, and the dopant of GaN layer is lightly doped as silicon or germanium in the N-shaped heavy doping GaN layer and N-shaped.
5. porous GaN conduction DBR according to claim 4, which is characterized in that the doping concentration of N-shaped heavy doping GaN layer is
5×1018~1 × 1020cm-3, the doping concentration that GaN layer is lightly doped in N-shaped is 1 × 1016~5 × 1018cm-3；
Preferably, the porous GaN conduction DBR layer incorporates indium or aluminium component, material GaN, AlGaN, InGaN or
AlInGaN。
6. porous GaN conduction DBR according to claim 1, which is characterized in that the aperture of the porous GaN conduction DBR layer
For 1nm~300nm.
7. porous GaN conduction DBR according to claim 1, which is characterized in that the buffer layer is unintentional doping GaN
Or AlN.
8. porous GaN conduction DBR according to claim 1, which is characterized in that the substrate is sapphire, silicon, silicon carbide
Or glass, the structure of substrate are plane or figure.
9. a kind of preparation method of porous GaN conduction DBR described in claim 1, which comprises the following steps:
(1) grown buffer layer and unintentional doped gan layer on substrate；
(2) the growing n-type doped gan layer in unintentional doped gan layer；
(3) the N-shaped heavy doping GaN layer that 5 pairs or more are alternately stacked is grown in n-type doping GaN layer, and GaN layer is lightly doped with N-shaped；
(4) GaN layer is lightly doped to the N-shaped being alternately stacked using the method for electrochemical corrosion and N-shaped heavy doping GaN layer carries out corruption
Erosion forms the multicycle porous GaN conduction DBR that the porous GaN layer of high hole rate and low hole ratio GaN layer overlap.
10. the preparation method of porous GaN conduction DBR according to claim 9, which is characterized in that using choosing in step (4)
Selecting property electrochemical corrosion solution is corroded, the selective electrochemical etchant solution be weak acid, weak base or neutral salt solution, it is excellent
It is selected as sodium hydroxide, hydrochloric acid, sodium chloride or sodium nitrate.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111433921A (en) * | 2019-12-16 | 2020-07-17 | 厦门三安光电有限公司 | Light-emitting diode |
| CN111900240A (en) * | 2020-06-03 | 2020-11-06 | 山东大学 | High-brightness LED and preparation method thereof |
| CN112002788A (en) * | 2020-09-03 | 2020-11-27 | 中国科学院半导体研究所 | III-nitride-based distributed Bragg reflector and preparation method thereof |
| CN112510129A (en) * | 2020-11-10 | 2021-03-16 | 晶能光电（江西）有限公司 | GaN-based vertical LED chip and preparation method thereof |
| WO2023207727A1 (en) * | 2022-04-27 | 2023-11-02 | 华为技术有限公司 | Light-emitting chip, display module, electronic device and processing method for light-emitting chip |
| WO2024114692A1 (en) * | 2022-11-30 | 2024-06-06 | The University Of Hong Kong | A cladding-less gan-based thin-film edge-emitting laser |
| WO2024155494A1 (en) * | 2023-01-17 | 2024-07-25 | Snap Inc. | Micro-led dbr fabrication by electrochemical etching |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111433921A (en) * | 2019-12-16 | 2020-07-17 | 厦门三安光电有限公司 | Light-emitting diode |
| CN111433921B (en) * | 2019-12-16 | 2023-08-15 | 厦门三安光电有限公司 | Light-emitting diode |
| CN111900240A (en) * | 2020-06-03 | 2020-11-06 | 山东大学 | High-brightness LED and preparation method thereof |
| CN112002788A (en) * | 2020-09-03 | 2020-11-27 | 中国科学院半导体研究所 | III-nitride-based distributed Bragg reflector and preparation method thereof |
| CN112510129A (en) * | 2020-11-10 | 2021-03-16 | 晶能光电（江西）有限公司 | GaN-based vertical LED chip and preparation method thereof |
| CN112510129B (en) * | 2020-11-10 | 2023-08-01 | 晶能光电股份有限公司 | GaN-based vertical LED chip and preparation method thereof |
| WO2023207727A1 (en) * | 2022-04-27 | 2023-11-02 | 华为技术有限公司 | Light-emitting chip, display module, electronic device and processing method for light-emitting chip |
| WO2024114692A1 (en) * | 2022-11-30 | 2024-06-06 | The University Of Hong Kong | A cladding-less gan-based thin-film edge-emitting laser |
| WO2024155494A1 (en) * | 2023-01-17 | 2024-07-25 | Snap Inc. | Micro-led dbr fabrication by electrochemical etching |
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