CN110058446A - Display device and the method for manufacturing the display device - Google Patents
Display device and the method for manufacturing the display device Download PDFInfo
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- CN110058446A CN110058446A CN201910004848.4A CN201910004848A CN110058446A CN 110058446 A CN110058446 A CN 110058446A CN 201910004848 A CN201910004848 A CN 201910004848A CN 110058446 A CN110058446 A CN 110058446A
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- refractive
- forming low
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- display device
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/65—Additives macromolecular
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133502—Antiglare, refractive index matching layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The method for providing display device and manufacturing display device.The display device includes: base substrate；Color switching pattern is arranged on base substrate；And forming low-refractive-index layer, it is arranged on base substrate, is stacked with color switching pattern, and there is the refractive index lower than the refractive index of color switching pattern.Forming low-refractive-index layer includes the first matrix resin and the particle clusters that are dispersed in the first matrix resin, and particle clusters include multiple particles and the bridge that combines particle.
Description
This application claims Korea Spro 10-2018-0006683 submitted on January 18th, 2018 in Korean Intellectual Property Office
The complete disclosure of the priority and right of state's patent application, the South Korea patent application is included herein by reference.
Technical field
This disclosure relates to display device and the method for manufacturing the display device.
Background technique
According to the development of multimedia technology, display device has been become more and more important, and is used for such as liquid
The various display devices of crystalline substance display (LCD) device, Organic Light Emitting Diode (OLED) display device etc. are (for example, various types of
Display device).
LCD device includes: LCD panel, and there is field electrode (such as pixel electrode and common electrode) occurs and is wherein sent out by field
Raw electrode generates the liquid crystal layer of electric field；And light source unit, light is provided to LCD panel.LCD device is by applying a voltage to field
Electrode occurs and shows image to make liquid crystal reorientation in the liquid crystal layer, to pass through liquid crystal layer for the control of each pixel
Light quantity.
OLED display include setting in a plurality of pixels and can independent control multiple OLED.Each of OLED
Including two electrodes and the organic luminous layer being placed between two electrodes.OLED as self-emissive element may be used as light source.
As a kind of method for making each pixel show specific color, for each pixel, can from light source unit to
Color switching pattern is set in the optical path of viewer.
Summary of the invention
Color switching pattern, which can convert the color of incident light and can export, has different colors from incident light
Light.The example of color switching pattern includes the pattern structure with the wavelength-shift body of such as quantum dot dispersed therein.
The efficiency of color conversion of color switching pattern be influence display device display quality (for example, colorrendering quality and brightness) most
One of key factor.In order to improve the efficiency of color conversion of color switching pattern, can be used with excellent color conversion effect
The material of rate, or the thickness of color switching pattern can be increased.However, not only the efficiency but also color of color-converting material turn
All there is limitation (for example, specific limitation) in the thickness for changing pattern.
Relate to improve using color switching pattern in terms of embodiment of the disclosure the efficiency of color conversion and because
This has the display device of improved colorrendering quality and brightness.
Display device of the manufacture with improved colorrendering quality and brightness is further related in terms of embodiment of the disclosure
Method.
However, being not limited to aspect set forth herein in terms of embodiment of the disclosure.It is specific by referring to what is be provided below
The above and other aspect of embodiment, embodiment of the disclosure will become disclosure those of ordinary skill in the art
It is more obvious.
According to an exemplary embodiment of the present disclosure, display device includes: base substrate；Color switching pattern is located at matrix
In substrate；And forming low-refractive-index layer, it is located on base substrate, is stacked with color switching pattern, and has than color switching pattern
The low refractive index of refractive index, wherein forming low-refractive-index layer includes the first matrix resin and particle clusters, and the particle clusters are dispersed in
In first matrix resin and including multiple particles and the bridge for combining the multiple particle.
In the exemplary embodiment, color switching pattern and forming low-refractive-index layer can be in contact with each other to form optical interface, low
The surface of the contact color switching pattern of refracting layer can be uneven surface.
In the exemplary embodiment, the uneven surface of forming low-refractive-index layer can be formed by particle clusters.
In the exemplary embodiment, color switching pattern may include: the second matrix resin and be dispersed in the second matrix tree
Wavelength-shift body in rouge, wherein the refractive index of the second matrix resin is higher than the refractive index of forming low-refractive-index layer by least 0.3.
In the exemplary embodiment, hole can be limited between the particle of particle clusters, and the refractive index of forming low-refractive-index layer
It can be about 1.1 to about 1.4.
In the exemplary embodiment, particle can be silica dioxide granule.
In the exemplary embodiment, bridge may include polysiloxanes key.
In the exemplary embodiment, the first matrix resin may include siloxane type polymers, siloxane type polymers
Weight average molecular weight can be about 100g/mol to about 10000g/mol, and siloxane type polymers can have fluorine-substituted side
Chain.
In the exemplary embodiment, silica dioxide granule can be non-hollow silica dioxide granule, and silica
The size of grain can be about 10nm to about 30nm.
In the exemplary embodiment, forming low-refractive-index layer may include between base substrate and the side of color switching pattern
The first forming low-refractive-index layer or the second forming low-refractive-index layer on the other side of color switching pattern.
In the exemplary embodiment, display device can also include: between base substrate and the first forming low-refractive-index layer
First wave length band filter, wherein first wave length band filter may be constructed such that the light (example for selectively absorbing specific wavelength
Such as, the light of blue wavelength).
In the exemplary embodiment, first wave length band filter may include organic material, and first wave length band filters
Device can be contacted with the first forming low-refractive-index layer.
In the exemplary embodiment, the refractive index of first wave length band filter can be higher than the refractive index of the first forming low-refractive-index layer
At least 0.3.
In the exemplary embodiment, display device can also include between color switching pattern and the second forming low-refractive-index layer
Second wave length band filter, wherein the second forming low-refractive-index layer may be constructed such that covering color switching pattern side surface, and
Second wave length band filter, which may be constructed such that, selectively reflects the light of specific wavelength (for example, the light or blue of green wavelength
The light of wavelength).
In the exemplary embodiment, second wave length band filter can be including be alternately stacked one or more
The Bragg reflector of one inorganic layer and one or more second inorganic layers.
In the exemplary embodiment, second wave length band filter can connect with color switching pattern and the second forming low-refractive-index layer
Touching.
In the exemplary embodiment, the first inorganic layer can have 1.7 or higher refractive index, and the second inorganic layer can have
There are 1.5 or lower refractive index.
In the exemplary embodiment, the lowest level contacted with color switching pattern and the second wave of second wave length band filter
The top layer of long band filter contacted with the second forming low-refractive-index layer may each comprise the first inorganic layer.
In the exemplary embodiment, display device can also include the first pixel and display and first of the first color of display
Second pixel of the second different color of color and on the second forming low-refractive-index layer and the coating including organic material,
In, the first forming low-refractive-index layer, the second forming low-refractive-index layer and coating can be all throughout the first pixels and the second pixel.
According to an exemplary embodiment of the present disclosure, the method for manufacturing display device includes: preparation particle clusters and siloxanes
Quasi polymer, particle clusters include multiple particles and the bridge for making the multiple particle combination；By making particle clusters and siloxanes
Quasi polymer dispersion prepares dispersion in a solvent；And dispersion is applied on base substrate and to being applied in matrix base
Dispersion on bottom is heat-treated, wherein bridge includes polysiloxanes key.
In the exemplary embodiment, the step of preparing particle clusters and siloxane type polymers may include preparing titanium dioxide
Silicon particle and silanol compound, and particle is formed by mixing silica dioxide granule and silanol compound and being dehydrated
Cluster and siloxane type polymers.
In the exemplary embodiment, the mixed weight of silica dioxide granule and silanol compound ratio can be about 7:3 extremely
About 9:1, the size of particle clusters can be about 50nm to about 1000nm.
In the exemplary embodiment, in the step of preparing dispersion, the weight ratio of solvent and dispersion can be about
90wt% to about 98wt%.
According to the another exemplary embodiment of the disclosure, the method for manufacturing display device includes: to prepare non-hollow dioxy
Silicon carbide particle and siloxane type polymers；It is prepared by dispersing silica dioxide granule and siloxane type polymers in a solvent
Dispersion；And dispersion is applied on base substrate and the dispersion being applied on base substrate is heat-treated,
In, the size of silica dioxide granule is about 10nm to about 30nm.
In the exemplary embodiment, in the step of preparing dispersion, silica dioxide granule and siloxane type polymers
Weight ratio can be about 7:3 to about 9:1, and the weight average molecular weight of siloxane type polymers can be about 100g/mol to about
10000g/mol。
In the exemplary embodiment, the step of being heat-treated to dispersion may include at about 180 DEG C to about 250 DEG C
At a temperature of dispersion is heat-treated, and in the step of being heat-treated to dispersion, silica dioxide granule and silicon oxygen
Chemical bond can be formed between alkanes polymer.
According to the aforementioned and other exemplary embodiments of the disclosure, can use between forming low-refractive-index layer and color switching pattern
Optical interface make transmitted through color switching pattern at least some light reuse, therefore, can be further improved color turn
The efficiency changed.
Pass through following specific embodiment, drawings and claims, the other feature of the exemplary embodiment of the disclosure
It can be significantly with aspect.
Detailed description of the invention
Be described in detail the exemplary embodiment of the disclosure by referring to accompanying drawing, the exemplary embodiment of the disclosure above and
Other aspects and feature will be apparent, in the accompanying drawings:
Fig. 1 is the decomposition perspective view of display device accoding to exemplary embodiment；
Fig. 2 is the cross-sectional view of any pixel of the display device of Fig. 1；
Fig. 3 is the enlarged drawing of the region A of Fig. 2；
Fig. 4 is the enlarged drawing of the region B of Fig. 2；
Fig. 5 is the schematic diagram for showing the particle clusters of Fig. 3 and Fig. 4；
Fig. 6 is the schematic diagram for showing the chemical bond of the bridge between silicon particle；
Fig. 7 is the cross-sectional view of the first forming low-refractive-index layer of the display device for explanation figure 2 and the function of the second forming low-refractive-index layer；
Fig. 8 is the cross-sectional view of display device according to another exemplary embodiment；
Fig. 9 is the enlarged drawing of the region A of Fig. 8；
Figure 10 is the enlarged drawing of the region B of Fig. 8；
Figure 11 is the cross-sectional view of display device according to another exemplary embodiment；
Figure 12 to Figure 20 is the schematic diagram for showing the method for manufacture display device accoding to exemplary embodiment；
Figure 21 to Figure 28 is the schematic diagram for showing the method for manufacture display device according to another exemplary embodiment；
Figure 29 is the MIcrosope image according to the first forming low-refractive-index layer of the display device of example 1；
Figure 30 shows the quantum efficiency of the test cell of the display device according to example 1, example 2 and comparative examples；
Figure 31 shows the evaluation result of the adhesiveness of forming low-refractive-index layer；
Figure 32 shows the reference transmissivity of the substrate of glass according to experimental example 1 and the preparation of experimental example 2；
Figure 33 shows the refractive index of the forming low-refractive-index layer of the substrate of glass prepared according to experimental example 3 to experimental example 8；With
And
Figure 34 shows the amount of gas evolved of experimental example 3 and experimental example 7 and control substrate.
Specific embodiment
By referring to following specific embodiment and attached drawing, the exemplary embodiment of the disclosure can be more easily to understand
Aspect and feature and the method for realizing it.However, the disclosure can be embodied in many different forms, and should not be by
It is interpreted as being limited to exemplary embodiment set forth herein.On the contrary, thesing embodiments are provided so that the disclosure will be thorough and complete
Whole, and the design for the disclosure being fully communicated to those skilled in the art.The disclosure is limited by claim and its equivalent
It is fixed.
It will be appreciated that when element or layer be referred to as on another element or layer, " being connected to " or " being integrated to " it is another
When one element or layer, the element or layer can directly on another element or layer, be directly connected to or be bonded directly to institute
Another element or layer are stated, or may exist intermediary element or middle layer.When element or layer are referred to as " directly existing " another element
Or when layer "upper", " being directly connected to " or " being bonded directly to " another element or layer, intermediary element or middle layer is not present.Such as exist
What this was used, connection and combine can be with finger element each other physically, electrically and/or fluidly connect.
Identical appended drawing reference indicates identical element.As used herein, term "and/or" includes one or more
Any combination of related listed item and all combinations.In addition, when describing the embodiment of the present invention, the use of " can with " is related to
" one or more embodiments of the invention ".A column element is expressed in when such as at least one of " ... (kind/person) "
When after (element), the element (element) of permutation is modified, rather than modifies the individual component (element) in the column.In addition, term
" exemplary " is intended to indicate that example or explanation.As used herein, it is believed that term " use " and its modification respectively with term
" utilization " and its modification are synonymous.
It will be appreciated that although term " first ", " second ", " third " etc. can be used herein come describe various elements,
Component, regions, layers, and/or portions, but these elements, component, regions, layers, and/or portions should not be limited by these terms.
These terms are only used to distinguish an element, component, region, layer or part and another element, component, region, layer or part
It opens.Therefore, in the case where not departing from the introduction of the disclosure, first element, component, region, layer or part discussed below can
To be referred to as second element, component, region, layer or part.
Can be used herein for ease of description, such as " ... under ", " in ... lower section ", "lower", " ... on
Side ", "upper" etc. spatially relative term an elements or features and another (a little) elements or features as illustrated in the diagram are described
Relationship.It will be appreciated that other than orientation discribed in figure, spatially relative term be also intended to including device using or
Different direction in operation.For example, being described as " " other elements or features if the device in attached drawing is reversed
The element of " below " or " under " will then be oriented " " described other elements or features " top ".Therefore, exemplary art
Language " in ... lower section " may include above and below two kinds of orientation.
As used herein, term " first direction X " indicates an any direction on specific plane, term " second party
The direction intersected with first direction X on the specific plane is indicated to Y ", and term " third direction Z " is indicated perpendicular to specific flat
The direction in face.Unless otherwise stated, term " plane " as used herein indicates that first direction X and second direction Y belongs to
In plane.
In the present specification, not only when element B is arranged on element A, but also when element A is arranged on element B, member
Part A and element B referred to as " overlie one another ".
The exemplary embodiment of the disclosure will be described below with reference to the accompanying drawings.
Fig. 1 is the decomposition perspective view of display device according to the exemplary embodiment of the disclosure.
Referring to Fig.1, display device 1 can be the dress of the liquid crystal display (LCD) including display panel DP and light source unit BLU
It sets, the display panel DP includes liquid crystal layer.
Display panel DP can be the panel (for example, panel type) including the element for making display device 1 show image
Component.The multiple pixels (PX1 and PX2) substantially arranged in the matrix form in the plan view can be limited to display panel DP
In.As used herein, term " pixel " indicates to limit and dividing the display area for being used for display color in the plan view
Single region, and pixel can show scheduled basic colors.That is, pixel, which can be, to be shown independently of other pixels
Show the minimum unit region of color.
Multiple pixels (PX1 and PX2) may include showing that the first pixel PX1 of the first color and display have than the first face
Second pixel PX2 of the second color of the short peak wavelength of the peak wavelength of color.For example, shown by the first pixel PX1 first
Color can be the red of the peak wavelength with about 610nm to about 650nm, can by the second color that the second pixel PX2 is shown
To be the blue of the peak wavelength with about 430nm to about 470nm.However, the present disclosure is not limited to the examples.In another example
In, the first color can be the green of the peak wavelength with about 530nm to about 570nm.
Light source unit BLU can be set to be stacked on third direction Z with display panel DP, and can be towards display surface
Plate DP transmitting has the light of predetermined wavelength.In one exemplary embodiment, light source unit BLU can be including light source and leaded light
The light source unit (for example, marginal mode light source unit) of plate, the light source directly emit light, and the light-guide plate guides are provided by light source
Light towards display panel DP emit.
Light source can be light emitting diode (LED), organic LED (OLED) or laser diode (LD).It is exemplary at one
In embodiment, light source can emit the light of the blue wavelength of the single peak wavelength with about 430nm to about 470nm, and light source
Unit B LU can provide the light of blue wavelength to display panel DP.In a further exemplary embodiment, light source unit BLU can
To emit ultraviolet (UV) light or white light.
Light guide plate can guide the light provided by light source to advance towards display panel DP.The material of light guide plate is not limited specifically
System, as long as the material has high transparency.For example, light guide plate may include glass material, quartz material or polymeric material
Expect (such as polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) or polycarbonate (PC)).Another
In example, it can be not provided with light guide plate, and light source unit BLU can be including being set as on third direction Z and display surface
Plate DP stacked light source it is straight under (for example, straight-down negative) light source unit.
Although not specifically illustrated, one or more optical sheets also be can be set in display panel DP and light source unit
Between BLU.Optical sheet may include in prismatic lens, diffusion disk, (reflection) polarizing film, cylindrical lenses piece and micro-lens sheet at least
It is a kind of.Optical sheet can be by modulating by the optical characteristics (example of the light source unit BLU light advanced towards display panel DP provided
Such as, optically focused, diffusion, scattering or polarization characteristic) Lai Gaishan display device 1 display quality.
The display panel DP of display device 1 is more fully described hereinafter with reference to Fig. 2.Fig. 2 is the display device of Fig. 1
The cross-sectional view of 1 any pixel (specifically, the first pixel PX1 and the second pixel PX2).
Referring to Figures 1 and 2, display panel DP can be but not limited to LCD panel, the LCD panel include upper substrate 11,
Lower substrate 21 and the liquid crystal layer 31 being placed between substrate 11 and lower substrate 21.Liquid crystal layer 31 may be at by upper substrate 11, under
The state of substrate 21 and the containment member sealing for combining substrate 11 and lower substrate 21.However, the invention is not limited thereto, in addition to
Various display panels except LCD panel are readily applicable to display panel DP.
Substrate 11 will be described below.Upper substrate 11 may include upper base substrate 110 and color switching pattern
410, and can also include one or more forming low-refractive-index layers (310 and 320).Upper substrate 11 can be including color transition diagram
The color conversion substrate or element of case 410.
Upper base substrate 110 can be transparent insulation substrate or film.For example, upper base substrate 110 may include glass material
Material, quartz material or transparent plastic material.In some exemplary embodiments, upper base substrate 110 can have flexibility, and
Display device 1 can be bending LCD device.
The rear surface in upper base substrate 110 can be set in light-blocking pattern 205 (for example, in the case of figure 2, bottom surface)
On.Light-blocking pattern 205 can be arranged in display area along the boundary between multiple pixels (PX1 and PX2), and can be to prevent
The generation of color mixing defect only or between the multiple pixels (PX1 and PX2) of reduction.For example, light-blocking pattern 205 can have tool
The substantially grid shape of the standby multiple openings for corresponding respectively to multiple pixels (PX1 and PX2), but the present disclosure is not limited thereto.Gear
Light pattern 205 may include light-blocking colorant (such as organic material comprising black pigment or dyestuff) or may include impermeable
Bright metal material (such as chromium (Cr)).
In some exemplary embodiments, cap rock 210 can be set on light-blocking pattern 205.Cap rock 210 can be including
The single layer of inorganic material.In one exemplary embodiment, cap rock 210 may include having about 1.7 or lower refractive index
Inorganic material.The example of inorganic material includes silicon nitride, and but the present disclosure is not limited thereto.Cap rock 210 can prevent or substantially
It prevents light-blocking pattern 205 to be damaged or corrode, and the adhesiveness of the first forming low-refractive-index layer 310 can be improved.
First forming low-refractive-index layer 310 can be set on cap rock 210.First forming low-refractive-index layer 310 can have to be converted than color
The refractive index low with the refractive index of first wave length band filter 510 of pattern 410.First forming low-refractive-index layer 310 can be placed as and face
Color converts pattern 410 and first wave length band filter 510 contacts.First forming low-refractive-index layer 310 can be set to throughout the first pixel
PX1 and the second pixel PX2.First forming low-refractive-index layer 310 can have different thickness from a region to another region.
In one exemplary embodiment, the first forming low-refractive-index layer 310 may include the first matrix resin and be dispersed in first
Particle clusters in matrix resin.In the exemplary embodiment that the first forming low-refractive-index layer 310 is the single layer comprising particle clusters, the
The mean refractive index of one forming low-refractive-index layer 310 can be lower than the refraction of color switching pattern 410 and first wave length band filter 510
Rate.The material and function of the first forming low-refractive-index layer 310 are more fully described later with reference to Fig. 3.
Color switching pattern 410 can be set on the first forming low-refractive-index layer 310.In some exemplary embodiments, color
Conversion pattern 410 can be placed as contacting with the first forming low-refractive-index layer 310.Color switching pattern 410 can be by the color of incident light
Be converted to different colors.That is, incident light can be converted into and transmitted through color switching pattern 410 with predetermined wavelength
The light of band.In one exemplary embodiment, color switching pattern 410 can be set in the first pixel PX1, and be not arranged in
In second pixel PX2.
It matrix resin 411 and the wavelength that is dispersed in the second matrix resin 411 that color switching pattern 410, which may include second,
Body 412 is shifted, and can also include the first scatterer 413 being also dispersed in the second matrix resin 411.
The material of second matrix resin 411 is not particularly limited, as long as the material has high transparency and moves to wavelength
Excellent scattering (for example, dispersion) property of position body 412 and the first scatterer 413.For example, the second matrix resin 411 can
To include the organic material of such as epoxy resin, acrylic resin, more (cardo) resins of card or imide resin.
Wavelength-shift body 412 can make the peak wavelength of incident light convert or shift.The example of wavelength-shift body 412 includes
Quantum dot, quantum rod and phosphor.Quantum dot is in response to the transition in its electronics from conduction band to valence band and emits particular color
The granular materials of light.
Quantum dot can be semiconductor nanocrystal materials.According to itself composition and size with the quantum of predetermined band gap
Point can be absorbed light and can emit the light with predetermined wavelength.The example of the semiconductor nanocrystal of quantum dot includes being based on
The nanocrystal of IV race, the compound nano crystal based on-VI race, II race, compound nano crystal, base based on III group-V race
In the compound nano crystal or their combination of-VI race, IV race.
For example, the nanocrystal based on IV race may include silicon (Si), germanium (Ge) or such as silicon carbide (SiC) or SiGe
Binary compound, but the present disclosure is not limited thereto.
Compound nano crystal based on-VI race, II race may include: such as CdSe, CdTe, ZnS, ZnSe, ZnTe,
The binary compound of ZnO, HgS, HgSe, HgTe, MgSe, MgS or their mixture；Such as CdSeS, CdSeTe, CdSTe,
ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、
The ternary compound of CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS or their mixture；Such as
HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe's
Quaternary compound or their mixture；Or it is some in above-mentioned binary compound, ternary compound and quaternary compound
Mixture, but the present disclosure is not limited thereto.
Compound nano crystal based on III group-V race may include: such as GaN, GaP, GaAs, GaSb, AlN, AlP,
The binary compound of AlAs, AlSb, InN, InP, InAs, InSb or their mixture；Such as GaNP, GaNAs, GaNSb,
GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb's is ternary
Close object or their mixture；Such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs,
The quaternary compound of GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or
Their mixture；Or some mixtures in above-mentioned binary compound, ternary compound and quaternary compound, but this
It discloses without being limited thereto.
Compound nano crystal based on-VI race, IV race may include: such as SnS, SnSe, SnTe, PbS, PbSe, PbTe
Binary compound or their mixture；Such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS,
The ternary compound of SnPbSe, SnPbTe or their mixture；The quaternization of such as SnPbSSe, SnPbSeTe, SnPbSTe
Close object or their mixture；Or some mixtures in above-mentioned binary compound, ternary compound and quaternary compound,
But the present disclosure is not limited thereto.
In some exemplary embodiments, quantum dot can have nucleocapsid structure, and nucleocapsid structure includes comprising upper
State the core of nanocrystal and the shell around core.Shell may be used as the chemomorphosis for preventing or reducing core to keep semiconductor
The protective layer of characteristic and/or it may be used as charged layer for assigning quantum dot electrophoretic characteristic.Shell can have single layer structure
Or multilayered structure.The example of shell includes metal oxide or nonmetal oxide, semiconducting compound and their combination.
For example, metal oxide or nonmetal oxide can be such as SiO2、Al2O3、TiO2、ZnO、MnO、Mn2O3、
Mn3O4、CuO、FeO、Fe2O3、Fe3O4、CoO、Co3O4Or the binary compound of NiO；Or such as MgAl2O4、CoFe2O4、NiFe2O4
Or CoMn2O4Ternary compound, but the present disclosure is not limited thereto.
For example, semiconducting compound can be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaSb, HgS,
HgSe, HgTe, InAs, InP, InSb, AlAs, AlP or AlSb, but the present disclosure is not limited thereto.
By the light that wavelength-shift body 412 emits can have about 45nm or smaller, about 40nm or smaller or about 30nm or
Therefore smaller wavelength spectra half-breadth can further improve the purity and reproducibility of the color shown by display device 1.
In addition, the incident direction regardless of incident light, wavelength-shift body 412 can emit light in all directions.It therefore, can be with
Improve the side visibility by the first pixel PX1 of display device 1 the first color shown.
In a non-limiting example, the wavelength-shift body 412 of the color switching pattern 410 in the first pixel PX1 is set
It can be absorbed by the light source unit BLU at least some blue lights provided and can emit unimodal with about 610nm to about 650nm
It is worth the light of the red wavelength of wavelength.Therefore, it can become red transmitted through the light of color switching pattern 410, the first pixel PX1 can
To be displayed in red.
First scatterer 413 can have the refractive index different from the refractive index of the second matrix resin 411, and can be with
Second matrix resin 411 forms optical interface.For example, the first scatterer 413 can be optical scatter.First scatterer 413
Material be not particularly limited, as long as the material can make transmitted through color switching pattern 410 at least some light scatter.
For example, the first scatterer 413 can be the particle of metal oxide or the particle of organic material.Metal oxide can be oxidation
Titanium (TiO2), zirconium oxide (ZrO2), aluminium oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO) or tin oxide (SnO2), and
And organic material can be acrylic resin or urethane resin.Incidence angle regardless of incident light, the first scattering
Body 413 can be such that light scatters in all directions, and not substantially change the wave of the light transmitted through color switching pattern 410
It is long.The length in the path of the light transmitted through color switching pattern 410 can be increased, and wavelength-shift body 412 can be improved
Efficiency of color conversion.
In some exemplary embodiments, refraction low with first in cap rock 210 can be set in first wave length band filter 510
Between layer 310.First wave length band filter 510 can be placed as contacting with cap rock 210 and the first forming low-refractive-index layer 310.First wave
Long band filter 510, which can be, transmits some light by it by the transmission for stopping the light of specific wavelength band
Wavelength selecting filter.First wave length band filter 510 can be set in the first pixel PX1, but be not arranged in second
In pixel PX2.
In one exemplary embodiment, first wave length band filter 510 can be colour filter, and the colour filter includes base
The organic material of body resin and the colorant comprising being dispersed or dissolved in matrix resin (such as, pigments or dyes).For example, the
One wavelength band filter 510 can be selectively absorbed the light of the blue wavelength of the peak wavelength with about 430nm to about 470nm
And transmit the light of other wavelength bands by it.By between color switching pattern 410 and viewer
The first wave length band filter 510 for stopping the transmission of light of blue wavelength is set, the red shown by the first pixel PX1 can be made
Spectrum further sharpens, and can improve the excitation purity and display quality of display device 1.
Scattering pattern 420 also can be set on the first forming low-refractive-index layer 310.Scattering pattern 420 can make to transmit by it
At least some light scattering.In one exemplary embodiment, scattering pattern 420 can be set in the second pixel PX2, still
It is not arranged in the first pixel PX1.
Scattering pattern 420 may include third matrix resin 421 and the second scattering being dispersed in third matrix resin 421
Body 423, and can also include the colorant being dispersed or dissolved in third matrix resin 421.
Similar with the material of the second matrix resin 411, the material of third matrix resin 421 is not particularly limited, as long as should
Material has high transparency and the excellent scattering nature to the second scatterer 423.For example, third matrix resin 421
It may include the organic material of such as epoxy resin, acrylic resin, the more resins of card or imide resin.Second scatterer 423
Material be not particularly limited, as long as the material can make transmitted through scattering pattern 420 at least some light scatter.Example
Such as, the second scatterer 423 can be the particle of metal oxide or the particle of organic material.No matter the incidence angle of incident light such as
What, the second scatterer 423 can be such that light scatters in all directions, and not substantially change transmitted through scattering pattern 420
The wavelength of light.Therefore, can improve by the side visibility of the second pixel PX2 of display device 1 the second color shown.
In some exemplary embodiments, scattering pattern 420 can also include being dispersed or dissolved in third matrix resin 421
In colorant (such as, pigments or dyes).For example, 420 property of can choose of scattering pattern make have about 430nm to about
The light of the blue wavelength of the peak wavelength of 470nm is transmitted by it.Therefore, the blue light shown by the second pixel PX2 can be made
Spectrum further sharpens, and can improve the excitation purity and display quality of display device 1.
In a non-limiting example, the scattering pattern 420 being arranged in the second pixel PX2 can make by light source unit BLU
The blue light of offer is transmitted by it, and the second pixel PX2 can be displayed in blue.
Second forming low-refractive-index layer 320 can be set on color switching pattern 410 and scattering pattern 420.Second forming low-refractive-index layer
320 can have the refractive index lower with the refractive index of first wave length band filter 510 than color switching pattern 410.Second low folding
Penetrating layer 320 may include and the identical material of material of the first forming low-refractive-index layer 310 or different materials.Second forming low-refractive-index layer 320
It can be placed as contacting and can covering the side surface of color switching pattern 410 with color switching pattern 410.Second low refraction
Layer 320 can be set to throughout the first pixel PX1 and the second pixel PX2.Second forming low-refractive-index layer 320 can be placed as low with first
Refracting layer 310 at least partly contacts.
Second forming low-refractive-index layer 320 may include the 4th matrix resin and the particle clusters that are dispersed in the 4th matrix resin.
In the exemplary embodiment that the second forming low-refractive-index layer 320 is the single layer comprising particle clusters, the average folding of the second forming low-refractive-index layer 320
The rate of penetrating can be lower than the refractive index of color switching pattern 410 and first wave length band filter 510.
In some exemplary embodiments, the second forming low-refractive-index layer 320 can make to be stacked on multiple on base substrate 110
Difference in height between element minimizes or reduces the difference in height.That is, the second forming low-refractive-index layer 320 can execute pre- planarization function
Energy.The material and function of the second forming low-refractive-index layer 320 are more fully described later with reference to Fig. 3.
Coating 610 can be set on the second forming low-refractive-index layer 320.Coating 610 can be set to throughout the first pixel PX1 and
Second pixel PX2.Coating 610 can make the difference in height between the multiple element being stacked on base substrate 110 minimize or
Reduce the difference in height.That is, coating 610 can execute secondary planarization function.In some exemplary embodiments, coating 610
It can be arranged directly on the second forming low-refractive-index layer 320.The material of coating 610 is not particularly limited, as long as the material is with excellent
Planarization characteristics and high transparency.For example, coating 610 can be including such as epoxy resin, acrylic resin, card it is more
The organic layer of the organic material of resin, silicone resin or silsesquioxane resins.
In some exemplary embodiments, the first passivation layer 220 can be set on coating 610.First passivation layer 220 can
To include non-metal inorganic material.The example of non-metal inorganic material includes silica, silicon nitride or silicon oxynitride.First passivation
Layer 220 can will protect coating 610 in the technique of the formation linearity pattern 650 of description later, and but the present disclosure is not limited thereto.
In the case where forming linearity pattern 650 by dry ecthing, the first passivation layer 220 can execute etch stop function, and because
This can prevent or basically prevent coating 610 and unintentionally be etched.In addition, the first passivation layer 220 can improve linearity pattern
650 with the adhesiveness of the coating 610 for including organic material, and can be by preventing or basically preventing 650 quilt of linearity pattern
The impurity of such as air or moisture damages or corrodes to improve the durability and reliability of display device 1.In another exemplary reality
It applies in example, the first passivation layer 220 can be not provided with, and linearity pattern 650 can be arranged directly on coating 610.
Linearity pattern 650 can be set on the first passivation layer 220.Although not specifically illustrated, in one direction
The linearity pattern 650 of extension can be set to be separated from each other and can form striated pattern.Linearity pattern 650 can be with liquid
Crystal layer 31 executes the function of polarizer (for such as above polarizer) together.In one exemplary embodiment, linearly
Pattern 650 can have the characteristic of reflective polarizer, be blocked in the direction essentially parallel directions extended with linearity pattern 650
The characteristic and make the side substantially parallel in the direction being separated from each other with linearity pattern 650 that the polarized component of upper vibration transmits
The characteristic for the polarized component transmission vibrated upwards.That is, linearity pattern 650 can reflect at least some incident lights and can be to logical
The light for crossing its transmission assigns polarization characteristic.
The material of linearity pattern 650 is not particularly limited, as long as the material is easy to process and has excellent reflectivity
?.For example, linearity pattern 650 may include metal material.The example of metal material include aluminium (Al), silver-colored (Ag), golden (Au),
Copper (Cu), titanium (Ti), molybdenum (Mo), nickel (Ni) or their alloy.In some exemplary embodiments, linearity pattern 650 can be with
Stacked body with metal material and non-metal inorganic material is (for example, the metal material and nonmetallic inorganic material that overlie one another
Material).
Second passivation layer 230 can be set on linearity pattern 650.Second passivation layer 230 can be arranged directly on linearly
On pattern 650.Therefore, the second passivation layer 230 can cover and protect linearity pattern 650 and can make linearity pattern 650 with
The common electrode of description 690 is insulated later.In addition, the second passivation layer 230 can limit the gap AG between linearity pattern 650.
Gap AG can be filled with gas or can be sky.Second passivation layer 230 may include organic material or inorganic material, or
Person can have the stacked body of organic material and inorganic material.The example of organic material includes epoxy resin, acrylic resin, card
More resins, silicone resin and silsesquioxane resins, the example of inorganic material include silicon nitride, silica and silicon oxynitride.
Common electrode 690 can be set on the second passivation layer 230.Common electrode 690 can be to exist together with pixel electrode 670
Electrode occurs for the field that electric field is formed in liquid crystal layer 31.Liquid crystal can control by the electric field that common electrode 690 and pixel electrode 670 are formed
35 behavior and 35 reorientation of liquid crystal can be made.Common electrode 690 can be set to throughout the first pixel PX1 and the second pixel
PX2 can apply common voltage to common electrode 690 without considering the difference between multiple pixels (PX1 and PX2).Common electrode
690 may include transparent conductive material.The example of transparent conductive material includes tin indium oxide (ITO), indium zinc oxide (IZO), oxygen
Change zinc (ZnO), indium oxide (III) (In2O3), the zinc oxide (AZO) of indium gallium (IGO) and adulterated al.
Lower substrate 21 will be described below.Lower substrate 21 may include lower substrate substrate 120, switch element TR and pixel
Electrode 670.
Similar to upper base substrate 110, lower substrate substrate 120 can be transparent insulation substrate or film.For example, lower substrate base
Bottom 120 may include glass material, quartz material or transparent plastic material.In some exemplary embodiments, lower substrate substrate
120 can have flexibility, and display device 1 can be bending LCD device.
The front surface in lower substrate substrate 120 can be set in switch element TR (for example, in the case of figure 2, top surface)
On.Switch element TR can be set in multiple pixels (PX1 and PX2) and can permit or driving signal be prevented to be transferred to picture
Plain electrode 670.In one exemplary embodiment, switch element TR can be thin film transistor (TFT) (TFT).The control terminal of TFT
It may be coupled to gate lines G L and can receive gate drive signal, the input terminal of TFT may be coupled to data line DL simultaneously
And can receive data drive signal, the output terminal of TFT may be electrically connected to pixel electrode 670.
Middle layer 620 can be set on switch element TR.Middle layer 620 can make the element being formed thereon and formation
Element insulating under it, and the difference in height between the multiple element being stacked in lower substrate substrate 120 can be made to minimize
Or reduce the difference in height.That is, middle layer 620 can execute both insulation function and planarization function.Middle layer 620 can wrap
Include one or more layers.For example, middle layer 620 may include organic layer containing organic material, nothing containing inorganic materials
The stacked body of machine layer or organic layer and inorganic layer.
Pixel electrode 670 can be set in middle layer 620.Pixel electrode 670 can be with common electrode 690 together in liquid
Electrode occurs for the field that electric field is formed in crystal layer 31.Pixel electrode 670 can be set in multiple pixels (PX1 and PX2).Pixel electricity
Pole 670 can be individually controllable and can be provided with different driving signals.For example, pixel electrode 670 can be via shape
The output terminal of switch element TR is electrically connected at the contact hole in middle layer 620.Similar to common electrode 690, pixel electricity
Pole 670 may include transparent conductive material.
Liquid crystal layer 31 will be described below.Liquid crystal layer 31 can be set between upper substrate 11 and lower substrate 21.Liquid crystal
Layer 31 may include multiple liquid crystal of initial orientation.As used herein, term " liquid crystal " indicates there is the single of liquid crystal characteristic
Molecule as molecule or one group.In one exemplary embodiment, liquid crystal 35 can have negative dielectric anisotropic and can
It is so that their long axis is substantially perpendicular to plane with initial orientation.For example, liquid crystal 35 can be with substantially vertical orientation to have
There is scheduled pre-tilt angle.
The first forming low-refractive-index layer 310 and second that display device 1 is more fully described hereinafter with reference to Fig. 3 to Fig. 6 is low
Refracting layer 320.Fig. 3 is the enlarged drawing of the region A of Fig. 2.Specifically, Fig. 3 is to show the first forming low-refractive-index layer 310 and color transition diagram
The cross-sectional view of optical interface between case 410.Fig. 4 is the enlarged drawing of the region B of Fig. 2.Specifically, Fig. 4 is to show color conversion
The cross-sectional view of optical interface between pattern 410 and the second forming low-refractive-index layer 320.Fig. 5 is the particle clusters for showing Fig. 3 and Fig. 4
Schematic diagram.Fig. 6 is the schematic diagram for showing the chemical bond of the bridge between silicon particle.
Referring to figs. 1 to Fig. 6, the first forming low-refractive-index layer 310 may include the first matrix resin 311 and be dispersed in the first matrix tree
Particle clusters PC in rouge 311, the second forming low-refractive-index layer 320 may include the 4th matrix resin 321 and be dispersed in the 4th matrix tree
Particle clusters PC in rouge 321.Fig. 3 and Fig. 4 shows particle clusters PC in the first forming low-refractive-index layer 310 or the second forming low-refractive-index layer
It is separated from each other in 320, but selectively, particle clusters PC can be very close to each other.That is, the dispersion of particle clusters PC is close
Degree can be higher than the tamped density of particle clusters PC shown in Fig. 3 or Fig. 4.
The first forming low-refractive-index layer 310 will be described in more detail below.In one exemplary embodiment, the first low refraction
Layer 310 can form optical interface by being placed as contacting with color switching pattern 410.The placement of first forming low-refractive-index layer 310
Surface to contact with color switching pattern 410 can be uneven.The uneven surface of first forming low-refractive-index layer 310 can be with
It is attributed to particle clusters PC present in the first forming low-refractive-index layer 310.For example, particle clusters PC can be protruded or can be recessed, with
Form the surface of the first forming low-refractive-index layer 310.
The refractive index of first forming low-refractive-index layer 310 can be lower than the refractive index of color switching pattern 410.For example, the first low folding
The refractive index for penetrating layer 310 can be lower than the refractive index of the second matrix resin 411.For example, the refractive index of the second matrix resin 411 can
It is high by least 0.3 with the refractive index than the first forming low-refractive-index layer 310.Turned by the refractive index and color that increase the first forming low-refractive-index layer 310
The difference between the refractive index of pattern 410 is changed, can promote light between the first forming low-refractive-index layer 310 and color switching pattern 410
The total reflection of interface.I.e., it is possible to increase among the light beam that the 410 to the first forming low-refractive-index layer of color switching pattern 310 is advanced
The light quantity reflected from the interface between the first forming low-refractive-index layer 310 and color switching pattern 410, and utilizing for light can be improved and imitated
Rate.
In some exemplary embodiments, the refractive index of the first forming low-refractive-index layer 310 can be lower than first wave length band filter
510 refractive index.For example, the refractive index of first wave length band filter 510 can than the first forming low-refractive-index layer 310 refractive index up to
Few 0.3.Therefore, effective optical interface can be formed between first wave length band filter 510 and the first forming low-refractive-index layer 310.
Similarly, the second forming low-refractive-index layer 320 can form optics circle by being placed as contacting with color switching pattern 410
Face.Second forming low-refractive-index layer 320 be placed as can be with the surface that color switching pattern 410 contacts it is uneven.Second low folding
The uneven surface for penetrating layer 320 can be attributed to particle clusters PC present in the second forming low-refractive-index layer 320.
The refractive index of second forming low-refractive-index layer 320 can be lower than the refractive index of color switching pattern 410.For example, the second low folding
The refractive index for penetrating layer 320 can be lower than the refractive index of the second matrix resin 411.For example, the refractive index of the second matrix resin 411 can
It is high by least 0.3 with the refractive index than the second forming low-refractive-index layer 320.Turned by the refractive index and color that increase the second forming low-refractive-index layer 320
The difference between the refractive index of pattern 410 is changed, can promote light between the second forming low-refractive-index layer 320 and color switching pattern 410
The total reflection of interface.I.e., it is possible to increase among the light beam that the 410 to the second forming low-refractive-index layer of color switching pattern 320 is advanced
The light quantity reflected from the interface between the second forming low-refractive-index layer 320 and color switching pattern 410, and utilizing for light can be improved and imitated
Rate.
In some exemplary embodiments, the refractive index of the second forming low-refractive-index layer 320 can be lower than first wave length band filter
510 refractive index.For example, the refractive index of first wave length band filter 510 can than the second forming low-refractive-index layer 320 refractive index up to
Few 0.3, but the present disclosure is not limited thereto.
Particle clusters PC may include particle PC1 and the bridge PC2 that makes particle PC1 be bonded to each other.
In one exemplary embodiment, particle PC1 can be silica dioxide granule.For example, particle PC1 can be it is hollow
Silica dioxide granule or non-hollow silica dioxide granule.The particle size of hollow silicon dioxide particle can be for for example, about 50nm extremely
About 100nm.The particle size of non-hollow silica dioxide granule can be for example, about 10nm to about 30nm.
Hole or chamber V can be limited between particle PC1.In some exemplary implementations that particle PC1 is silica dioxide granule
In example, the volume of chamber V can be increased by using relatively thin particle, it is thereby possible to reduce the first forming low-refractive-index layer 310 and the
The refractive index of two forming low-refractive-index layers 320.In one exemplary embodiment, the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320
Refractive index can be about 1.1 to about 1.4 or about 1.15 to about 1.3.
Bridge PC2 can be bonded with the functional group on the surface of particle PC1, so that particle PC1 is bonded to each other and forms chamber V.
In one exemplary embodiment, bridge PC2 may include polysiloxanes key.The bridge PC2 being formed between particle PC1 can be indicated
(for example, showing) is as shown in Figure 6.In some exemplary embodiments that particle PC1 is silica dioxide granule, bridge PC2 can be with
It is formed by the dehydration between the hydroxyl and siloxane type polymers on the surface of silica dioxide granule, but the disclosure
It is without being limited thereto.Referring to Fig. 6, R and R' independently selected from by hydrogen, fluorine, hydroxyl, the alkyl with 1 to 12 carbon atom, tool
There are alkoxy, the fluorinated alkyl with 1 to 12 carbon atom, vinyl and (methyl) acrylic acid of 1 to 12 carbon atom
The group of ester group composition.
First matrix resin 311 of the first forming low-refractive-index layer 310 and the 4th matrix resin 321 of the second forming low-refractive-index layer 320 can
To include siloxane type polymers.Siloxane type polymers can indicate that but the present disclosure is not limited thereto by following formula 1.
Formula 1
Referring to formula 1, R1、R2、R3And R4Independently selected from by hydrogen, fluorine, hydroxyl, the alkane with 1 to 12 carbon atom
Base, the alkoxy with 1 to 12 carbon atom, the fluorinated alkyl with 1 to 12 carbon atom, vinyl and (methyl) third
The group of enoyl- composition.
The weight average molecular weight of siloxane type polymers can be about 100g/mol to about 10000g/mol.When siloxanes is birdsed of the same feather flock together
When the weight average molecular weight for closing object is about 100g/mol or bigger, siloxane type polymers be may be used as discrete particles cluster PC
Matrix.In addition, when the weight average molecular weight of siloxane type polymers is about 10000g/mol or smaller, siloxane type polymers
The machinability and planarization characteristics and adhesion characteristic of the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320 can be improved.
In some exemplary embodiments, the type siloxane for including in the first matrix resin 311 and the 4th matrix resin 321
Polymer can have fluorine-substituted side chain.Fluorine-substituted side chain may include fluorine atom or fluoro-alkyl.When siloxanes is birdsed of the same feather flock together
When closing object has fluorine-substituted side chain, the first matrix resin 311 and the 4th base formed by siloxane type polymers can be reduced
The refractive index of body resin 321.Chamber V and can also be by reducing the first base is formed between particle PC1 that is, can not only pass through
The refractive index of body resin 311 and the 4th matrix resin 321 further decreases the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer
320 refractive index.
The siloxane type polymers of the bridge PC2 of particle clusters PC and the first matrix resin 311 and the 4th matrix resin 321
It can have identical repetitive unit.For example, the bridge PC2 of particle clusters PC and the first matrix resin 311 and the 4th matrix tree
The siloxane type polymers of rouge 321 are the siloxane type polymers with polysiloxanes key.Pass through the polymerization with same type
The bridge PC2 and the first matrix resin 311 of object formation particle clusters PC and the 4th matrix resin 321, can simplify the first low folding
The manufacture for penetrating layer 310 and the second forming low-refractive-index layer 320 can improve particle clusters PC for the first matrix resin 311 and the 4th base
The dispersing characteristic of body resin 321, and the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320 can be made to be provided with uniform folding
Penetrate rate.
In a further exemplary embodiment, can be not provided in the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320 one
It is a.
The first forming low-refractive-index layer 310 and the second forming low-refractive-index layer of display device 1 are more fully described hereinafter with reference to Fig. 7
320 function.Fig. 7 is the first forming low-refractive-index layer 310 of the display device 1 for explanation figure 2 and the function of the second forming low-refractive-index layer 320
Cross-sectional view.Specifically, Fig. 7 is the color switching pattern 410 and the first forming low-refractive-index layer 310 and for showing the first pixel PX1
The cross-sectional view of two forming low-refractive-index layers 320.
Referring to Fig. 7, the light provided by light source unit BLU can penetrate color switching pattern 410.
In a non-limiting example, at least some blue lights for providing color switching pattern 410 can not suffered from by wavelength
The color conversion that body 412 executes is shifted, and the second matrix resin 411 can be directed through as blue light L1 towards first low
Refracting layer 310 is advanced.
As described above, when the refractive index of the first forming low-refractive-index layer 310 and color switching pattern 410 refractive index that
When this is dramatically different, light can be promoted complete at the optical interface between the first forming low-refractive-index layer 310 and color switching pattern 410
Reflection.First forming low-refractive-index layer 310 can make transmitted through the second matrix resin 411 without converting make contributions at least one to color
A little blue light L1 recyclings, therefore the blue light of recycling can be made to make contributions color conversion.In this way it is possible to mention
The utilization efficiency of bloom, and the display quality (such as brightness) of display device 1 can be improved.
In another non-limiting example, at least some blue light L2 for providing color switching pattern 410 can be by wavelength
Displacement body 412 is converted to feux rouges.Incidence angle regardless of incident light, wavelength-shift body 412 can be sent out in all directions
Penetrate light.That is, at least some feux rouges emitted by wavelength-shift body 412 can be towards the second forming low-refractive-index layer 320 rather than towards sight
Person's of seeing (for example, in the case of fig. 7, in an upward direction) advances, therefore can not make contributions to the display of image.
However, as described above, when the refractive index of the second forming low-refractive-index layer 320 and the folding of color switching pattern 410
Penetrate rate it is dramatically different each other when, optical interface of the light between the second forming low-refractive-index layer 320 and color switching pattern 410 can be promoted
The total reflection at place.Second forming low-refractive-index layer 320, which can make to advance towards the second forming low-refractive-index layer 320, makes tribute without the display to image
At least some feux rouges recycling offered, therefore the feux rouges of recycling can be made to make contributions the display of image.With this
The utilization efficiency of light can be improved in mode, and can improve the display quality (such as brightness) of display device 1.
The color switching pattern 410 of display device 1 can be completely by the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320
It surrounds.Therefore, can bottle up the light transmitted through color switching pattern 410 and/or the wavelength-shift body from color switching pattern 410
The light of 412 transmittings, it is thus possible to improve the utilization efficiency of light.
The display device of the other exemplary embodiments according to the disclosure will be described below.In the accompanying drawings, similarly
Appended drawing reference indicates therefore same element detailed description thereof will not be repeated.
Fig. 8 is the cross-sectional view according to the display device of the another exemplary embodiment of the disclosure.Fig. 9 is the region A of Fig. 8
Enlarged drawing.Specifically, Fig. 9 is the section view for showing the optical interface between the first forming low-refractive-index layer 310 and color switching pattern 410
Figure.Figure 10 is the enlarged drawing of the region B of Fig. 8.Specifically, Figure 10 is to show second wave length band filter 520 and color transition diagram
The cross-sectional view for the optical interface that case 410 and the second forming low-refractive-index layer 320 are formed.
Referring to Fig. 8 to Figure 10, the display device 1 of display device 2 and Fig. 2 the difference is that: upper substrate 12 further includes
Second wave length band filter 520.
In one exemplary embodiment, second wave length band filter 520 can be further disposed at color switching pattern
410 and second between forming low-refractive-index layer 320.Second wave length band filter 520 can be the saturating of the light by stopping specific wavelength band
The wavelength selecting filter penetrated and transmit some light by it.Second wave length band filter 520 can be set
For throughout the first pixel PX1 and the second pixel PX2.Second wave length band filter 520 can be placed as and color switching pattern 410
The side surface of color switching pattern 410 is contacted and can covered with the second forming low-refractive-index layer 320.Second wave length band filter 520
It can be placed as at least partly contacting with the first forming low-refractive-index layer 310.In this case, color switching pattern 410 and second is low
Refracting layer 320 can not be placed as being in contact with each other and can be separated from each other.
Second wave length band filter 520 may include one or more first inorganic layers 521 and one or more
Second inorganic layer 522.Second wave length band filter 520 can be the distributing Bragg reflector including multiple layers.For example, the
Reflect to two wavelength band filters, 520 property of can choose the light of the green wavelength of the peak wavelength with about 530nm to about 570nm
With the light of the red wavelength of the peak wavelength with about 610nm to about 650nm, and the property of can choose make the light of other wavelength
It is transmitted by it.However, the present disclosure is not limited thereto, in another embodiment, for example, second wave length band filter 520 can select
Selecting property the ground light of reflection green wavelength and/or the light of blue wavelength, and the property of can choose so that the light of other wavelength is passed through it
Transmission.The wavelength for the light that the wavelength and second wave length band filter 520 of the light transmitted by second wave length band filter 520 reflect
Difference between the refractive index of the first inorganic layer 521 and the refractive index of the second inorganic layer 522, the first inorganic layer 521 can be passed through
The quantity and the second inorganic layer 522 of difference and/or the first inorganic layer 521 between thickness and the thickness of the second inorganic layer 522
Quantity control.
First inorganic layer 521 and the second inorganic layer 522 may include different materials.For example, the first inorganic layer 521 can be with
Including the material with 1.7 or higher refractive index, the second inorganic layer 522 may include having 1.5 or lower refractive index
Material.For example, the first inorganic layer 521 may include silicon nitride, the second inorganic layer 522 may include silica.However, the disclosure
It is not limited to these examples.
In a non-limiting example, second wave length band filter 520 may include odd-level.In 521 He of the first inorganic layer
In the case that second inorganic layer 522 is alternately stacked, the top layer of second wave length band filter 520 and lowest level can include
Identical material.It includes that there are two the first inorganic layer 521 and one second for tool that Fig. 8, which shows second wave length band filter 520 to be,
Three layers of inorganic layer 522, but the present disclosure is not limited thereto.
In some exemplary embodiments, second wave length band filter 520 is placed as contacting with the second forming low-refractive-index layer 320
Top layer's (or lowest level in Fig. 8) and second wave length band filter 520 be placed as contacting with color switching pattern 410
Lowest level (or top layer in Fig. 8) can be the first inorganic layer 521.By that will have the refraction than the second inorganic layer 522
First inorganic layer 521 of the relatively high refractive index of rate is placed as contacting with color switching pattern 410, can improve second wave length band
Reflection efficiency of the filter 520 for the light of green or red wavelength.In addition, by the way that the first inorganic layer 521 is placed as and the
The contact of one forming low-refractive-index layer 310 can improve the adhesiveness of the first forming low-refractive-index layer 310 and second wave length band filter 520.In addition,
By the way that the first inorganic layer 521 to be placed as contacting with the second forming low-refractive-index layer 320, the refractive index of the first inorganic layer 521 can be increased
Difference between the refractive index of the second forming low-refractive-index layer 320 maximizes the difference, meanwhile, the second forming low-refractive-index layer can be improved
320 with the adhesiveness of second wave length band filter 520.
Second wave length band filter 520 can be reflected by the wavelength-shift body 412 in the first pixel PX1 in all directions
Among the light beam of the feux rouges of transmitting towards second wave length band filter 520 (for example, in the case of fig. 8, in downwardly direction
On) transmitting light so that reflection light advances towards upper base substrate 110 (that is, towards viewer), therefore can make reflect
Light makes contributions to the display of image.In this way it is possible to improve the utilization efficiency of light, and display device 2 can be improved
Display quality (such as brightness and excitation purity).
Second forming low-refractive-index layer 320 can be by being placed as and 520 (specifically, second wave length band of second wave length band filter
First inorganic layer 521 of filter 520) it contacts to form optical interface.Second forming low-refractive-index layer 320 be placed as with it is first inorganic
The surface of 521 contact of layer can be uneven.The uneven surface of second forming low-refractive-index layer 320 can be attributed to particle clusters
The presence of PC.
The refractive index of second forming low-refractive-index layer 320 can be lower than the refractive index of the first inorganic layer 521.For example, the second low refraction
The refractive index that the refractive index of layer 320 can be about the 1.1 to about 1.4 or about 1.15 to about 1.3, and first inorganic layer 521 can be with
It is about 1.7 or higher.However, the present disclosure is not limited to the examples.
Figure 11 is the cross-sectional view according to the display device of the another exemplary embodiment of the disclosure.
Referring to Fig.1 1, different from the display device 1 of Fig. 2, the not instead of LCD device of display device 3, Organic Light Emitting Diode
(OLED) display device.
In one exemplary embodiment, display device 3 may include upper substrate 13 and lower substrate 43.Upper substrate 13 can be with
It is the color conversion substrate for including color switching pattern 410, the first forming low-refractive-index layer 310 and the second forming low-refractive-index layer 320.Color conversion
Their own corresponding part is essentially identical in pattern 410, the first forming low-refractive-index layer 310 and second forming low-refractive-index layer 320 and Fig. 2, because
This, detailed description thereof will not be repeated.
In some exemplary embodiments, third passivation layer 240 can be set on the second forming low-refractive-index layer 320.Third is blunt
Changing layer 240 may include non-metal inorganic material.The example of non-metal inorganic material includes silica, silicon nitride and nitrogen oxidation
Silicon.Third passivation layer 240 can prevent or reduce the infiltration of moisture or air, therefore can prevent or reduce color switching pattern
The damage of 410 wavelength-shift body 412.
Lower substrate 43 can be the OLED substrate including lower substrate substrate 130, TFT and light-emitting component 800.That is, lower substrate
43 may include self-emissive element, therefore may be used as light source unit.
Lower substrate substrate 130 can be transparent or opaque dielectric base or film.For example, lower substrate substrate 130 can be with
Including glass material, quartz material or flexible polymer material, (such as polyimides (PI), gathers to benzene two polycarbonate (PC)
Formic acid glycol ester (PET) or polyacrylate (PA)).
TFT can be set in the front surface (for example, in case of fig. 11, top surface) of lower substrate substrate 130.TFT
It can be driving transistor, be configured as controlling the amount of the electric current flowed in active layer 710 via channel region 711, thus
Control the emission measure of light-emitting component 800.For example, TFT may include as the gate electrode 730 of control terminal, as input terminal
Source electrode 750, as output terminal drain electrode 770 and provide channel active layer 710.Figure 11 shows TFT as it
The top-gated TFT of 710 top of active layer is arranged in middle gate electrode 730, but selectively, TFT can be bottom gate TFT.
Active layer 710 may include semiconductor material.For example, active layer 710 may include polycrystalline Si.In another example
In, active layer 710 may include the non-Si base semiconductor material of single crystalline Si, amorphous Si or such as oxide semiconductor.Active layer
710 may include channel region 711, source region 713 and drain region 712.Channel region 711 can be wherein form electronics or hole can root
The region in the path being moved along it according to the voltage for being applied to gate electrode 730.Source region 713 and drain region 712 can pass through channel region
711 are spaced apart.That is, the electronics or hole that provide via source region 713 can be moved to drain region 712, Huo Zhejing via channel region 711
The electronics provided by drain region 712 or hole can be moved to source region 713 via channel region 711.Source region 713 and drain region 712 can be with
With the high conductivity of the conductivity than channel region 711.
Gate electrode 730 can be set on active layer 710.Gate electrode 730 can on third direction Z with active layer 710
Channel region 711 it is stacked.Gate electrode 730 may be electrically connected to the switch for controlling the on or off of multiple pixels (PX1 and PX2)
The output terminal of transistor.The control terminal and input terminal of switching transistor can be electrically connected respectively to scan signal line sum number
It may be constructed such that according to the output terminal of signal wire, and switching transistor according to the control terminal for being applied to switching transistor
Signal and on or off.
First insulating layer 641 can be placed between active layer 710 and gate electrode 730, and can make active layer 710 and grid
Electrode 730 insulate.Second insulating layer 642 can be set on gate electrode 730.Second insulating layer 642 can make gate electrode 730 with
Element insulating in second insulating layer 642 is set.In some exemplary embodiments, second insulating layer 642 can have packet
Include the stacked structure of multilayer.First insulating layer 641 and second insulating layer 642 may include such as silicon nitride, silica or nitrogen oxygen
The inorganic insulating material of SiClx.The through-hole of the source region 713 and the exposure of drain region 712 that allow active layer 710 is formed in the first insulation
In layer 641 and second insulating layer 642.
Source electrode 750 and drain electrode 770 can be set in second insulating layer 642.Source electrode 750 and drain electrode 770 can
In through-hole to be placed in the first insulating layer 641 and second insulating layer 642 and it can be placed as contacting with active layer 710.Although
It is not specifically illustrated, but source electrode 750 may be electrically connected to drive voltage line, and drain electrode 770 may be electrically connected to later
The anode 810 that will be described in further detail.
Coating 643 can be set on TFT.Coating 643 can make the multiple element being arranged in lower substrate substrate 130 it
Between difference in height minimize or reduce the difference in height.That is, coating 643 can at least partly compensate difference in height and make difference in height
Planarization, therefore the space that light-emitting component 800 is steadily arranged can be provided.The material of coating 643 is not particularly limited, as long as
The material has excellent insulation characterisitic and planarization characteristics.For example, coating 643 may include acrylic resin, epoxy
Resin, imide resin, the more resins of card or ester resin.
Light-emitting component 800 can be set on coating 643.In one exemplary embodiment, light-emitting component 800 can be
OLED, the OLED include anode 810, the cathode being spaced apart with anode 810 830 and are placed between anode 810 and cathode 830
Organic luminous layer 850.In some exemplary embodiments, it is arranged in and is displayed in red respectively and the first pixel PX1 of blue and the
Light-emitting component 800 in two pixel PX2 can emit the light of same color.
Anode 810 can be arranged directly on coating 643.Anode 810 can be through the formation of the through-hole electricity in coating 643
It is connected to drain electrode 770.Anode 810 can be with the stacking of transparent electrode, opaque electrode or transparent electrode and opaque electrode
Body.The example of the material of transparent electrode includes ITO, IZO, ZnO, In2O3, IGO and AZO, the example packet of the material of opaque electrode
Include lithium (Li), Al, magnesium (Mg), Ag, Ni and Cr.Anode 810, which can be, to be arranged in multiple pixels (PX1 and PX2) and each other
The pixel electrode of independently received driving signal.
Cathode 830 can be set on anode 810.Cathode 830 and anode 810 can be spaced by organic luminous layer 850
It opens, and light-emitting component 800 can be driven together.Similar to anode 810, cathode 830 can be transparent electrode, opaque electrode
Or the stacked body of transparent electrode and opaque electrode.Regardless of the difference between the first pixel PX1 and the second pixel PX2,
Cathode 830 can be the common electrode throughout the first pixel PX1 and the second pixel PX2 setting.
Organic luminous layer 850 can be placed between anode 810 and cathode 830.Organic luminous layer 850 can be by making by sun
Hole and electronics that pole 810 and cathode 830 provide is compound to generate light.For example, hole and electronics can be in organic luminous layers 850
In it is compound to generate exciton, and the transition in response to (for example, adjoint) exciton from excitation state to ground state, light can be emitted.?
In one exemplary embodiment, organic luminous layer 850 can be emitted by fluorescent emission or phosphorescent emissions has about 430nm extremely
The blue light of the peak wavelength of about 470nm.The organic luminous layer 850 of transmitting blue light can be set to throughout the first pixel PX1 and the
Two pixel PX2.That is, the light-emitting component 800 being arranged in the first pixel PX1 and the light-emitting component being arranged in the second pixel PX2
800 can be blue light emitting device, and but the present disclosure is not limited thereto.Although not specifically illustrated, it is placed in anode 810 and yin
Organic luminous layer 850 between pole 830 can have multilayered structure.That is, light-emitting component 800 can have including multiple organic hairs
The stacked structure or layered structure (tandem structure) of photosphere 850.In some exemplary embodiments, such as hole
Control layer (that is, hole injection layer and hole transmission layer), electronic control layer (that is, electron injecting layer and electron transfer layer), charge
Generating layer and the functional layer of buffer layer also can be set between anode 810 and cathode 830.
In some exemplary embodiments, pixel limits film 644 and can be set on anode 810.Pixel limits film 644 can
So that multiple pixels (PX1 and PX2) are separated from each other.Pixel, which limits film 644, can have the surface portion exposure for making anode 810
Opening.That is, in the plan view, pixel, which limits film 644, can have the anode 810 made She Zhi in multiple pixels (PX1 and PX2)
Exposed opening.Organic luminous layer 850 and cathode 830 can be set to be limited on film 644 in pixel.
Encapsulated layer 900 can be set on light-emitting component 800.Encapsulated layer 900 can prevent or basically prevent the member that shines
Part 800 is damaged or is deformed by the infiltration of the impurity of such as moisture or air.In one exemplary embodiment, encapsulated layer 900
It may include one or more inorganic encapsulated layers (910 and 950) and one or more organic encapsulation layers (930).For example,
Encapsulated layer 900 may include being set up directly on the first inorganic encapsulated layer 910 on cathode 830 and including inorganic material, setting
On the first inorganic encapsulated layer 910 and the organic encapsulation layer 930 including organic material and setting are on organic encapsulation layer 930
And the second inorganic encapsulated layer 950 including inorganic material.The example of inorganic material includes silica, silicon nitride and nitrogen oxidation
Silicon, the example of organic material include acrylic resin and epoxy resin.Figure 11 shows the encapsulated layer 900 including three layers, still
The present disclosure is not limited thereto.In some exemplary embodiments, encapsulated layer 900 may include including, for example, hexamethyldisiloxane
Type siloxane encapsulated layer.
Upper substrate 13 including color switching pattern 410 and the lower substrate 43 including light-emitting component 800 can pass through bonding
Layer 630 combines.For example, adhesive layer 630 can be set between encapsulated layer 900 and third passivation layer 240, can fill
Gap between encapsulated layer 900 and third passivation layer 240, and encapsulated layer 900 and third passivation layer 240 can be made to combine.It is viscous
Closing layer 630 can be the organic layer including organic material, and the organic material includes thermosetting resin or photo-curable resin.
The method that manufacture display device according to the exemplary embodiment of the disclosure will be described below.
Figure 12 to Figure 20 is the schematic diagram for showing the method for manufacture display device according to the exemplary embodiment of the disclosure.
2, preparation particle clusters PC and siloxane type polymers PL referring to Fig.1, and prepare particle clusters PC and siloxanes
The dispersion 300a of quasi polymer PL.
In one exemplary embodiment, the movement of particle clusters PC and siloxane type polymers PL is prepared (for example, step
It suddenly) may include preparing particle and silanol compound, particle and silanol compound being made to mix merga pass dehydration simultaneously
Form particle clusters PC and siloxane type polymers PL.
Particle can be silica dioxide granule.For example, particle can be hollow silicon dioxide particle or non-hollow titanium dioxide
Silicon particle.The particle size of hollow silicon dioxide particle can be for example, about 50nm to about 100nm.Non- hollow silica dioxide granule
Particle size can be for example, about 10nm to about 30nm.
Silanol compound may include at least one of the compound indicated by following formula 2 to formula 4.
Formula 2
(HO)aSi(R5)4-a
Formula 3
(HO)bSi(R6)(R7)3-b
Formula 4
(HO)cSi(R8)4-c
Referring to formula 2, a is 2 to 4 integer, R5It is alkyl with 1 to 12 carbon atom or there is 1 to 12 carbon
The alkoxy of atom.Referring to formula 3, b is 2 or 3, R6It is fluorine or the fluoro-alkyl with 1 to 12 carbon atom, R7It is that there is 1
To the alkyl of 12 carbon atoms or the alkoxy with 1 to 12 carbon atom.Referring to formula 4, c is 2 to 4 integer, R8It is second
Alkenyl, allyl or (methyl) acryloyl group.
Silica dioxide granule and silanol compound can be combined by dehydration to form particle clusters PC, but originally
It discloses without being limited thereto.Particle clusters PC may include particle and the bridge for making particle combination.Bridge may include polysiloxanes key.Above
Particle clusters PC has been described, therefore, detailed description thereof will not be repeated.
Silanol compound can form the siloxane type polymers indicated by following formula 1 by dehydration, still
The present disclosure is not limited thereto.
Formula 1
The R of formula 1 is described above1、R2、R3And R4, therefore, detailed description thereof will not be repeated.
The weight average molecular weight of siloxane type polymers PL can be about 100g/mol to about 10000g/mol.Work as type siloxane
When the weight average molecular weight of polymer P L is about 100g/mol or bigger, siloxane type polymers PL be may be used as low in formation
The matrix for dispersing particle clusters PC in the technique of refracting layer.In addition, the weight average molecular weight as siloxane type polymers PL is about
10000g/mol or more hour, siloxane type polymers PL can improve forming low-refractive-index layer machinability and planarization characteristics and
Adhesion characteristic.
In some exemplary embodiments, in the movement of preparation particle clusters PC and siloxane type polymers PL (for example, step
Suddenly in), the mixed weight ratio of particle and silanol compound can be about 7:3 to about 9:1.When particle content be 70wt% or
When bigger, hole or chamber can be sufficiently formed between particles during the formation of particle clusters PC, therefore, forming low-refractive-index layer can be promoted
Formation.When the content of particle is more than 90wt%, the coagulation of particle occurs.Therefore, the coating that can reduce forming low-refractive-index layer can add
Work and rigidity, and the refractive index of forming low-refractive-index layer can become irregular.In this case, when forming low-refractive-index layer is applied to display
When device, atomization increases, and therefore, can make the deterioration in brightness of display device.
In the movement (for example, step) of preparation particle clusters PC and siloxane type polymers PL, of particle clusters PC
Particle size can be about 50nm to about 1000nm.
The movement (for example, step) for preparing dispersion 300a may include by particle clusters PC and siloxane type polymers PL
The movement (for example, step) being dispersed or dissolved in solvent SL.
Solvent SL is not particularly limited, as long as it has chemical stabilization for particle clusters PC and siloxane type polymers PL
Property and also have to the excellent dispersing characteristic of particle clusters PC and special to the excellent dissolution of siloxane type polymers PL
Property is to prevent or basically prevent the coagulation between particle clusters PC and siloxane type polymers PL.The example packet of solvent SL
Include propylene glycol methyl ether acetate (PGMEA), ethylene glycol mono-tert-butyl ether (ETB), propylene glycol monomethyl ether (PGME), 3- methoxyl group second
Acid butyl ester, isopropanol (IPA), propyl acetate and 3- methoxybutanol.
In some exemplary embodiments, solvent SL can be about 90wt% or bigger relative to the content of dispersion 300a
And about 98wt% or smaller.When the content of solvent SL is about 90wt% or bigger, the coagulation of particle clusters PC can be made most
Smallization or fully discrete particles cluster PC while reduce, and can fully dissolve siloxane type polymers PL.When
When the solid content of grain cluster PC and siloxane type polymers PL is about 2.0wt% or bigger, can be formed has uniform folding
Penetrate the forming low-refractive-index layer of rate.
Hereafter, referring to Fig.1 3, prepare base substrate 110, light-blocking pattern 205, cap rock 210 and first wave length band filter
510.Base substrate 110, light-blocking pattern 205, cap rock 210 and first wave length band filter 510 is described above, therefore,
It detailed description thereof will not be repeated.
Hereafter, referring to Fig.1 4, dispersion 300a is administered on the first wave length band filter 510 of Figure 13.Application dispersion
The method of body 300a is not particularly limited.For example, can be by slot coated or rotary coating come dosed dispersion 300a.It is applying
With in the movement (for example, step) of dispersion 300a, particle clusters PC may be at being substantially uniformly dispersed in solvent SL
State, and siloxane type polymers PL may be at the state being dissolved in solvent SL.
Hereafter, referring to Fig.1 5, by being heat-treated to the dispersion 300a being applied on first wave length band filter 510
To form the first forming low-refractive-index layer 310.In one exemplary embodiment, to point being applied on first wave length band filter 510
The movement (for example, step) that granular media 300a is heat-treated may include to point being applied on first wave length band filter 510
The movement (for example, step) and the dispersion to being applied on first wave length band filter 510 that granular media 300a executes preroast operation
Body 300a executes the movement (for example, step) of main baking operation.For example, can about 80 DEG C to about 120 DEG C at a temperature of execute
The movement (for example, step) about 60 of preroast operation is executed to the dispersion 300a being applied on first wave length band filter 510
Second to about 300 seconds, and can about 180 DEG C to about 250 DEG C at a temperature of execute to being applied in first wave length band filter 510
On dispersion 300a execute movement (for example, step) about 10 minutes to about 60 minutes of main baking operation.However, the disclosure is not
It is limited to the example.
By being heat-treated to the dispersion 300a being applied on first wave length band filter 510, can be included
First forming low-refractive-index layer 310 of matrix resin and the particle clusters PC being dispersed in matrix resin.Matrix resin can be by making
Siloxane type polymers PL in dispersion 300a solidifies and the matrix that obtains.The thickness of first forming low-refractive-index layer 310 can be from one
A region is to another regional change.
The first forming low-refractive-index layer 310 including matrix resin and particle clusters PC can have about 1.1 to about 1.4 or about 1.15
To about 1.3 mean refractive index.Therefore the first forming low-refractive-index layer 310, which is described above, detailed description thereof will not be repeated.
Hereafter, referring to Fig.1 6, color switching pattern 410, scattering pattern 420 and the are formed on the first forming low-refractive-index layer 310
Two wavelength band filters 520.Color switching pattern 410, scattering pattern 420 and second wave length band filter is described above
520, therefore, it detailed description thereof will not be repeated.
Hereafter, referring to Fig.1 7, dispersion 300a is applied on the second wave length band filter 520 of Figure 16.By dispersion
The method that 300a is applied on second wave length band filter 520 is not particularly limited.For example, slot coated or rotation can be passed through
Coating carrys out dosed dispersion 300a.In the movement being applied in dispersion 300a on second wave length band filter 520 (for example, step
Suddenly in), particle clusters PC may be at the state being substantially uniformly dispersed in solvent SL, and siloxane type polymers PL can
In the state being dissolved in solvent SL.
Hereafter, referring to Fig.1 8, by being heat-treated to the dispersion 300a being applied on second wave length band filter 520
To form the second forming low-refractive-index layer 320.In one exemplary embodiment, to point being applied on second wave length band filter 520
The movement (for example, step) that granular media 300a is heat-treated may include to point being applied on second wave length band filter 520
The movement (for example, step) and the dispersion to being applied on second wave length band filter 520 that granular media 300a executes preroast operation
Body 300a executes the movement (for example, step) of main baking operation.It is used to form the execution preroast operation of the second forming low-refractive-index layer 320
Movement (for example, step) with main baking operation can be with their own corresponding portion for being used to form the first forming low-refractive-index layer 310
The movement divided is identical.
By being heat-treated to the dispersion 300a being applied on second wave length band filter 520, can be included
Second forming low-refractive-index layer 320 of matrix resin and the particle clusters PC being dispersed in matrix resin.Second forming low-refractive-index layer 320 can be down to
Partially mitigate the difference in height formed by the element being stacked on base substrate 110.
The second forming low-refractive-index layer 320 including matrix resin and particle clusters PC can have about 1.1 to about 1.4 or about 1.15
To about 1.3 mean refractive index.Therefore the second forming low-refractive-index layer 320, which is described above, detailed description thereof will not be repeated.
Hereafter, referring to Fig.1 9, coating 610, the first passivation layer 220, linearity pattern are formed on the second forming low-refractive-index layer 320
650, the second passivation layer 230 and common electrode 690.Be described above coating 610, the first passivation layer 220, linearity pattern 650,
Therefore second passivation layer 230 and common electrode 690 detailed description thereof will not be repeated.
Hereafter, referring to Figure 20, prepare the substrate including switch element and pixel electrode 670, and in the substrate and figure
Liquid crystal layer 31 is inserted between common electrode 690 shown in 19.
Figure 21 to Figure 28 is that the method for showing manufacture display device according to the another exemplary embodiment of the disclosure is shown
It is intended to.
Referring to Figure 21, prepares particle PC1 and siloxane type polymers PL, prepare particle PC1 and siloxane type polymers PL
Dispersion 300b.
In one exemplary embodiment, particle PC1 can be non-hollow silica dioxide granule.Non- hollow silicon dioxide
The particle size of grain can be about 10nm to about 30nm.By using thin non-hollow silicon dioxide in forming forming low-refractive-index layer
Grain can form sufficiently large hole or chamber in the technique for forming particle clusters.
The weight average molecular weight of siloxane type polymers PL can be about 100g/mol to about 10000g/mol.Siloxanes is birdsed of the same feather flock together
Closing object PL can be identical as the siloxane type polymers indicated by equation 1 above, therefore, detailed description thereof will not be repeated.
The movement (for example, step) of preparation dispersion 300b may include by particle PC1 and siloxane type polymers PL points
The movement (for example, step) for dissipating or being dissolved in solvent SL.
In some exemplary embodiments, in the movement (for example, step) of preparation dispersion 300b, particle PC1 and silicon
The mixed weight ratio of oxygen alkanes polymer P L can be about 7:3 to about 9:1.When the content of particle PC1 is 70wt% or bigger,
Hole or chamber can be sufficiently formed between particle PC1 during the formation of particle clusters, therefore, the shape of forming low-refractive-index layer can be promoted
At.When the content of particle PC1 is more than 90wt%, the coagulation of particle PC1 occurs.In this case, when forming low-refractive-index layer application
When display device, atomization increases, and therefore, can make the deterioration in brightness of display device.
The example of solvent SL includes PGMEA, ETB, PGME, 3- methoxyacetic acid butyl ester, IPA, propyl acetate and 3- methoxy
Base butanol.
In some exemplary embodiments, solvent SL can be about 90wt% or bigger relative to the content of dispersion 300b
And about 98wt% or smaller.
Hereafter, referring to Figure 22, prepare base substrate 110, light-blocking pattern 205, cap rock 210 and first wave length band filter
510, and apply the dispersion 300b of Figure 21.In the movement (for example, step) of dosed dispersion 300b, particle PC1 can be with
In the state being dispersed substantially uniformly in solvent SL, and siloxane type polymers PL may be at being dissolved in solvent SL
State.
Hereafter, referring to Figure 23, the first forming low-refractive-index layer 310 is formed by being heat-treated to dispersion 300b.At one
In exemplary embodiment, the movement (for example, step) being heat-treated to dispersion 300b may include holding to dispersion 300b
The movement (for example, step) of row preroast operation and the movement (for example, step) that main baking operation is executed to dispersion 300b.It can
The movement (for example, step) of preroast operation is executed about to dispersion 300b with the at a temperature of execution at about 80 DEG C to about 120 DEG C
60 seconds to about 300 seconds.Main baking operation can be executed to dispersion 300b in about 180 DEG C to about 250 DEG C of at a temperature of execution
Act (for example, step) about 10 minutes to about 60 minutes.
Figure 24 is the enlarged drawing of the region C of Figure 23.Referring to Figure 23 and Figure 24, main baking operation is being executed to dispersion 300b
Movement (for example, step) in, particle PC1 and siloxane type polymers PL can be made to be bonded.For example, particle PC1 can be passed through
Surface on hydroxyl and siloxane type polymers PL between dehydration formed chemical bond, therefore, can be formed including
The particle clusters PC of grain PC1 and bridge, the bridge have the polysiloxanes key for being bonded particle PC1.
Therefore the first forming low-refractive-index layer 310, which is described above, detailed description thereof will not be repeated.
Hereafter, referring to Figure 25, color switching pattern 410, scattering pattern 420 and the are formed on the first forming low-refractive-index layer 310
Two wavelength band filters 520.Color switching pattern 410, scattering pattern 420 and second wave length band filter is described above
520, therefore, it detailed description thereof will not be repeated.
Hereafter, referring to Figure 26, the dispersion 300b of Figure 21 is applied on second wave length band filter 520.It will disperse
Body 300b is applied in the movement on second wave length band filter 520 (for example, step), and particle PC1 may be at substantially uniform
Ground is dispersed in the state in solvent SL, and siloxane type polymers PL may be at the state being dissolved in solvent SL.
Hereafter, referring to Figure 27, by being heat-treated to the dispersion 300b being applied on second wave length band filter 520
To form the second forming low-refractive-index layer 320.In one exemplary embodiment, to point being applied on second wave length band filter 520
The movement (for example, step) that granular media 300b is heat-treated may include to point being applied on second wave length band filter 520
The movement (for example, step) and the dispersion to being applied on second wave length band filter 520 that granular media 300b executes preroast operation
Body 300b executes the movement (for example, step) of main baking operation.To the dispersion being applied on second wave length band filter 520
300b is executed in the movement (for example, step) of main baking operation, can be formed between particle PC1 and siloxane type polymers PL
Therefore particle clusters can be formed by learning key.It is used to form execution preroast operation and the main roasting behaviour of the second forming low-refractive-index layer 320
The movement (for example, step) of work can be with the movement phase for the their own corresponding part for being used to form the first forming low-refractive-index layer 310
Together.
Hereafter, referring to Figure 28, coating 610, the first passivation layer 220, linearity pattern are formed on the second forming low-refractive-index layer 320
650, the second passivation layer 230 and common electrode 690 prepare the substrate including switch element and pixel electrode 670, and in the base
Liquid crystal layer 31 is inserted between common electrode 690 shown in bottom and Figure 28.
The above-mentioned of the disclosure is described in further detail hereinafter with reference to each example, comparative examples and experimental example to show
Example property embodiment.
Example 1
By forming the color switching pattern of the first forming low-refractive-index layer and the quantum dot particle including emitting feux rouges but not shape
It is manufactured at the second forming low-refractive-index layer with the test with the display device of the structure basically same structure of the display device 1 of Fig. 2
Unit.
Example 2
By formed the first forming low-refractive-index layer, including emit feux rouges quantum dot particle color switching pattern and the second low folding
Layer is penetrated to manufacture the test cell having with the display device of the structure basically same structure of the display device 1 of Fig. 2.
Comparative examples
By in a manner of the test cell of the display device of example 2 substantially similar way manufacture display device
Test cell, but the first forming low-refractive-index layer and the second forming low-refractive-index layer are not formed.
Experimental example: the evaluation of influence of the presence of forming low-refractive-index layer to light utilization ratio
The MIcrosope image of the first forming low-refractive-index layer of the display device according to example 1 is shown in Figure 29.
The light utilization ratio of the test cell of the display device according to example 1, example 2 and comparative examples is shown in Figure 30
Evaluation result.Referring to Figure 30, " quantum efficiency " is indicated by measuring from the display according to example 1, example 2 and comparative examples
Measurement result is simultaneously quantified as integral ratio and the data that obtain by the amount of the feux rouges of each transmitting in the test cell of device.
Referring to Figure 30, compared with according to the light utilization ratio of the test cell of the display device of comparative examples, according to example 1
Include the first forming low-refractive-index layer without include the second forming low-refractive-index layer display device test cell light utilization ratio improve about
13%, compared with according to the light utilization ratio of the test cell of the display device of comparative examples, what it is according to example 2 includes first low
The light utilization ratio of the test cell of the display device of both refracting layer and the second forming low-refractive-index layer improves about 54%.
Experimental example: the evaluation of the adhesiveness of forming low-refractive-index layer
Prepare the dispersion of particle clusters and siloxane type polymers.Next, silicon nitride film on the glass substrate.
Hereafter, it is formed by applying the dispersion of preparation on silicon nitride film and being heat-treated to it with dispersed therein
The forming low-refractive-index layer of grain cluster.Adhesive tape is administered on forming low-refractive-index layer, then removes adhesive tape, gained glass base from forming low-refractive-index layer
The image at bottom is as shown in Figure 31.
Referring to Figure 31, it is therefore clear that forming low-refractive-index layer remains in substrate of glass.It is also clear that even adhesive tape
Adhesive layer also remains adhered on forming low-refractive-index layer, this shows that the adhesiveness (for example, bonding force) of forming low-refractive-index layer and silicon nitride film is
Excellent.
Experimental example: the evaluation of the transmissivity of forming low-refractive-index layer
Silicon nitride film is formed on the glass substrate, and forming low-refractive-index layer is formed to have to about 0.9 μm of thickness on silicon nitride film
It spends (experimental example 1).Silicon nitride film is formed on the glass substrate, and forming low-refractive-index layer is formed to have about 2.7 μ on silicon nitride film
The thickness (experimental example 2) of m.
The glass according to experimental example 1 and the preparation of experimental example 2 is measured for the light of the wavelength with 250nm to 850nm
The transmissivity of glass substrate, as a result as shown in Figure 32.Referring to Figure 32, " referring to transmissivity " is indicated through measurement according to experimental example
1 and the transmissivity of each substrate of glass for preparing of experimental example 2 and measurement result is quantified as percentage and the data that obtain.
Referring to Figure 32, the wavelength of the substrate of glass that is prepared according to experimental example 1 and experimental example 2 for 450nm to 800nm
Light in range shows 99.0% or higher transmissivity.
Experimental example: chemical resistance evaluation
Silicon nitride film is formed on the glass substrate, and forming low-refractive-index layer is formed on silicon nitride film.About 180 DEG C at a temperature of it is right
Forming low-refractive-index layer is heat-treated (experimental example 3).The substrate of glass prepared according to experimental example 3 is immersed to the hydrogen of 0.045wt%
60 seconds (experimental example 4) in potassium oxide (KOH) solution.
Silicon nitride film is formed on the glass substrate, and forming low-refractive-index layer is formed on silicon nitride film.About 200 DEG C at a temperature of it is right
Forming low-refractive-index layer is heat-treated (experimental example 5).The substrate of glass prepared according to experimental example 5 is immersed to the KOH of 0.045wt%
60 seconds (experimental example 6) in solution.
Silicon nitride film is formed on the glass substrate, and forming low-refractive-index layer is formed on silicon nitride film.About 220 DEG C at a temperature of it is right
Forming low-refractive-index layer is heat-treated (experimental example 7).The substrate of glass prepared according to experimental example 7 is immersed to the KOH of 0.045wt%
60 seconds (experimental example 8) in solution.
The refractive index of the forming low-refractive-index layer of the substrate of glass prepared according to experimental example 3 to experimental example 8 is as shown in Figure 33.
Referring to Figure 33, it can be seen that the increase of the refractive index of the forming low-refractive-index layer immersed in KOH solution is inapparent (example
Such as, 0.02 or lower).I.e., it is therefore clear that according to the forming low-refractive-index layer of the display device of the above exemplary embodiments of the disclosure
There is excellent chemical resistance to the developing solution of such as KOH.
Experimental example: degassing evaluation
Substrate is prepared according to experimental example 3 and experimental example 7.The substrate prepared according to experimental example 3 and experimental example 7
Forming low-refractive-index layer with a thickness of about 1 μm.230 DEG C at a temperature of control substrate is heat-treated, there is 1 μm of thickness to be formed
Yellow photoresist film.
For when the substrate and control substrate prepared according to experimental example 3 and experimental example 7 180 DEG C at a temperature of be subjected to
The case where when subsequent heat treatment and the substrate that ought be prepared according to experimental example 3 and experimental example 7 and control substrate are at 230 DEG C
At a temperature of when being subjected to subsequent heat treatment the case where the amount of gas evolved that measures it is as shown in Figure 34.Specifically, Shimadzu GCMS- is utilized
QP2010Ultra passes through the measurement of HS GC-mass spectrum (HS-GC-MS) Lai Zhihang amount of gas evolved.
Referring to Figure 34, it can be seen that in the case where executing subsequent heat treatment at a temperature of 180 DEG C, show from according to experiment
The amount of the forming low-refractive-index layer degassing of substrate prepared by example 3 and experimental example 7 deaerates with from the yellow photoresist film of control substrate
Amount be not much different.On the contrary, in the case where executing subsequent heat treatment at a temperature of 230 DEG C, from according to experimental example 3 and experiment
What the amount of the forming low-refractive-index layer degassing of substrate prepared by example 7 even less than deaerated from the yellow photoresist film of control substrate
Amount.
Although illustrating and describing the present invention referring to exemplary embodiment of the present invention, this field is common
The skilled person will understand that in the feelings for not departing from the spirit and scope of the present invention as defined by claim and its equivalent
Under condition, the various changes in form and in details can be wherein being carried out.The exemplary embodiments described herein are considered as
Be only it is descriptive, rather than the purpose for limitation.
Claims (20)
1. a kind of display device, the display device include:
Base substrate；
Color switching pattern is located in described matrix substrate；And
Forming low-refractive-index layer is located in described matrix substrate, stacks with the color switching pattern, and has and convert than the color
The low refractive index of the refractive index of pattern,
Wherein, the forming low-refractive-index layer includes: the first matrix resin and particle clusters, is dispersed in first matrix resin
And including multiple particles and the bridge for combining the multiple particle.
2. display device according to claim 1, wherein
The color switching pattern and the forming low-refractive-index layer are in contact with each other to form optical interface,
The surface of the contact color switching pattern of the forming low-refractive-index layer is uneven surface, and
The uneven surface of the forming low-refractive-index layer is formed by the particle clusters.
3. display device according to claim 1, wherein
The color switching pattern includes:
Second matrix resin, and
Wavelength-shift body is dispersed in second matrix resin,
Wherein, the refractive index of second matrix resin is higher than the refractive index of the forming low-refractive-index layer by least 0.3.
4. display device according to claim 1, wherein
Hole is limited between the multiple particle of the particle clusters, and
The refractive index of the forming low-refractive-index layer is 1.1 to 1.4.
5. display device according to claim 1, wherein
The multiple particle is silica dioxide granule, and
The bridge includes polysiloxanes key.
6. display device according to claim 5, wherein
First matrix resin includes siloxane type polymers,
The weight average molecular weight of the siloxane type polymers is 100g/mol to 10000g/mol, and
The siloxane type polymers have fluorine-substituted side chain.
7. display device according to claim 5, wherein
The silica dioxide granule is non-hollow silicon dioxide particle, and
The size of the silica dioxide granule is 10nm to 30nm.
8. display device according to claim 1, wherein
The forming low-refractive-index layer includes:
First forming low-refractive-index layer, between described matrix substrate and the side of the color switching pattern, or
Second forming low-refractive-index layer, on the other side of the color switching pattern.
9. display device according to claim 8, the display device further include:
First wave length band filter, between described matrix substrate and first forming low-refractive-index layer,
Wherein, the first wave length band filter is configured to selectively absorb the light of specific wavelength.
10. display device according to claim 9, wherein
The first wave length band filter includes organic material, and
The first wave length band filter is contacted with first forming low-refractive-index layer.
11. display device according to claim 10, wherein the refractive index of the first wave length band filter is than described
The refractive index height at least 0.3 of one forming low-refractive-index layer.
12. display device according to claim 8, the display device further include:
Second wave length band filter, between the color switching pattern and second forming low-refractive-index layer,
Wherein,
Second forming low-refractive-index layer is configured to cover the side surface of the color switching pattern, and
The second wave length band filter is configured to selectively reflect the light of specific wavelength.
13. display device according to claim 12, wherein
The second wave length band filter be include one or more first inorganic layers being alternately stacked and one or more
The Bragg reflector of a second inorganic layer, and
The second wave length band filter is contacted with the color switching pattern and second forming low-refractive-index layer.
14. display device according to claim 13, wherein
First inorganic layer has 1.7 or higher refractive index,
Second inorganic layer has 1.5 or lower refractive index, and
The lowest level of the second wave length band filter contacted with the color switching pattern and second wave length band filtering
The top layer of device contacted with second forming low-refractive-index layer includes first inorganic layer.
15. display device according to claim 8, wherein
The display device further include:
First pixel and the second pixel, first pixel show that the first color, second pixel are shown and first face
The second different color of color, and
Coating is located on second forming low-refractive-index layer and including organic material,
Wherein, first forming low-refractive-index layer, second forming low-refractive-index layer and the coating are all throughout first pixel and described
Second pixel.
16. a kind of method for manufacturing display device, the described method comprises the following steps:
Particle clusters and siloxane type polymers are prepared, the particle clusters include multiple particles and combine the multiple particle
Bridge；
Dispersion is prepared by dispersing the particle clusters and the siloxane type polymers in a solvent；And
The dispersion is applied on base substrate and hot place is carried out to the dispersion being applied in described matrix substrate
Reason,
Wherein, the bridge includes polysiloxanes key.
17. according to the method for claim 16, wherein
The step of preparing the particle clusters and the siloxane type polymers include:
Prepare silica dioxide granule and silanol compound, and
The particle clusters and institute are formed by mixing the silica dioxide granule and the silanol compound and being dehydrated
State siloxane type polymers,
The mixed weight ratio of the silica dioxide granule and the silanol compound is 7:3 to 9:1, and
The size of the particle clusters is 50nm to 1000nm.
18. according to the method for claim 17, wherein in the step of preparing the dispersion,
The weight ratio of the solvent and the dispersion is 90wt% to 98wt%.
19. a kind of method for manufacturing display device, the described method comprises the following steps:
Prepare non-hollow silica dioxide granule and siloxane type polymers；
Dispersion is prepared by dispersing the silica dioxide granule and the siloxane type polymers in a solvent；And
The dispersion is applied on base substrate and hot place is carried out to the dispersion being applied in described matrix substrate
Reason,
Wherein, the size of the silica dioxide granule is 10nm to 30nm.
20. according to the method for claim 19, wherein
In the step of preparing the dispersion, the weight ratio of the silica dioxide granule and the siloxane type polymers is 7:
3 to 9:1,
The weight average molecular weight of the siloxane type polymers is 100g/mol to 10000g/mol,
The step of dispersion is heat-treated include 180 DEG C to 250 DEG C at a temperature of to the dispersion carry out heat
Processing, and
In the step of being heat-treated to the dispersion, between the silica dioxide granule and the siloxane type polymers
Form chemical bond.
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