CN110058140A - One kind powering on voltage detecting circuit, electronic device and internet of things equipment - Google Patents
One kind powering on voltage detecting circuit, electronic device and internet of things equipment Download PDFInfo
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- CN110058140A CN110058140A CN201810048419.2A CN201810048419A CN110058140A CN 110058140 A CN110058140 A CN 110058140A CN 201810048419 A CN201810048419 A CN 201810048419A CN 110058140 A CN110058140 A CN 110058140A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
One kind powering on voltage detecting circuit, electronic device and internet of things equipment, and powering on voltage detecting circuit includes: detection unit, is adapted to detect for piezoelectric voltage, is greater than cut-in voltage in response to upper piezoelectric voltage, output end generates conducting voltage；Non-resistive load unit, the impedance value between first end and second end are series at piezoelectric voltage via detection unit to the electric pathway with reference to ground by the first control voltage control；Feedback control unit is suitable for generating the first control voltage according to conducting voltage；Wherein, it is less than or equal to turnover voltage in response to upper piezoelectric voltage, it is the first impedance that the first control voltage, which controls the impedance value, so that conducting voltage is the first logic level；It is greater than turnover voltage in response to upper piezoelectric voltage, it is the second impedance greater than the first impedance that the first control voltage, which controls the impedance value, so that conducting voltage is the second logic level.The power consumption for powering on voltage detecting circuit can be reduced using the above scheme, and improves circuit reliability.
Description
Technical field
The present invention relates to electronic circuit design field, in particular to one kind power on voltage detecting circuit, electronic device and
Internet of things equipment.
Background technique
In integrated circuit (Integrated Circuit, abbreviation IC), it usually needs detected to upper piezoelectric voltage, especially
It is suitable for situation of the IC work under more powering modes, can determine which powering mode IC is in by detection, so that
IC carries out corresponding operation.
In the prior art, the detection of piezoelectric voltage can be carried out using voltage comparator, supplied with confirming which it is in
Piezoelectric voltage range；Such as the reference voltage that band gap reference generates can be accessed in an input terminal of voltage comparator, it is another
Input terminal accesses the upper piezoelectric voltage, and power supply electricity locating for upper piezoelectric voltage described in the output logic decision for passing through voltage comparator
Press range.
However, prior art needs to additionally introduce reference voltage, additional circuit reliability problem may be introduced, together
When be also required to additionally pay more circuit areas and power consumption.At the same time, low power dissipation design becomes electronic chip and electronics produces
The mainstream of product design.So, it when being detected to upper piezoelectric voltage, improves detection circuit stability and takes into account the low of detection circuit
Power consumption demand is very necessary.
Summary of the invention
The technical problem that the present invention solves is to improve detection circuit how when detecting to upper piezoelectric voltage and stablize
Property and the low-power consumption demand for taking into account detection circuit.
In order to solve the above technical problems, the embodiment of the present invention, which provides one kind, powers on voltage detecting circuit, the upper piezoelectric voltage
Detection circuit includes: detection unit, is adapted to detect for the received upper piezoelectric voltage of power port, is greater than in response to the upper piezoelectric voltage and opens
Voltage is opened, the output end of the detection unit generates conducting voltage；Non-resistive load unit couples the output of the detection unit
End, control terminal access the first control voltage, impedance value between the first end and second end of the non-resistive load unit by
The first control voltage control, the non-resistive load unit are series at the upper piezoelectric voltage via the detection unit to ginseng
On the electric pathway for examining ground；Feedback control unit is suitable for generating the first control voltage according to the conducting voltage；Wherein, it rings
Upper piezoelectric voltage described in Ying Yu is less than or equal to turnover voltage, and the first control voltage controls the first of the non-resistive load unit
Impedance value between end and second end is the first impedance, so that the conducting voltage is the first logic level, the overturning electricity
Pressure is greater than the cut-in voltage；It is greater than the turnover voltage in response to the upper piezoelectric voltage, the first control voltage controls institute
Stating the impedance value between the first end and second end of non-resistive load unit is the second impedance, so that the conducting voltage is not
It is same as the second logic level of first logic level, second impedance is greater than first impedance.
Optionally, the detection unit includes one or more concatenated diode.
Optionally, the non-resistive load unit includes: the first transistor, control terminal access the first control electricity
Pressure, output end couple the output end of the detection unit, and input terminal directly or indirectly couples described with reference to ground, response
It is less than or equal to the turnover voltage in the upper piezoelectric voltage, the first control voltage controls the first transistor conducting, rings
Upper piezoelectric voltage described in Ying Yu is greater than the turnover voltage, and the first control voltage controls the first transistor shutdown.
Optionally, the first transistor is NMOS transistor.
Optionally, the feedback control unit includes: output logical subunit, and input terminal accesses the conducting voltage,
Suitable for carrying out logical operation to the conducting voltage, to generate the second control voltage；Switch unit, control terminal access described the
Two control voltages, input terminal access association voltage, output end output the first control voltage, the association voltage and institute
It is associated to state piezoelectric voltage, is less than or equal to the turnover voltage in response to the upper piezoelectric voltage, the switching means conductive, so that
It obtains the first control voltage and is equal to the association voltage, be greater than the turnover voltage in response to the upper piezoelectric voltage, it is described to open
Close unit shutdown.
Optionally, the output logical subunit includes: the first phase inverter, and input terminal accesses the conducting voltage,
Output end output the second control voltage.
Optionally, the output logical subunit includes: hysteresis loop comparator, and input terminal accesses the conducting voltage,
Output end output the second control voltage, is greater than the turnover voltage in response to the upper piezoelectric voltage, the conducting voltage is big
In the upper limit threshold voltage of the hysteresis loop comparator.
Optionally, the switch unit includes: second transistor, and control terminal access the second control voltage is defeated
Outlet accesses the association voltage；Third transistor, control terminal access third and control voltage, output end coupling described second
The input terminal of transistor, the input terminal of the third transistor directly or indirectly couple described with reference to ground；Second phase inverter,
Its input terminal access the second control voltage, output end export the third and control voltage；Wherein, it is powered in response to described
Voltage is less than or equal to the turnover voltage, the second transistor conducting, the third transistor shutdown, so that the switch
Unit conducting；It is greater than the turnover voltage, the second transistor shutdown, the third transistor in response to the upper piezoelectric voltage
Conducting, the switch unit shutdown.
Optionally, described to power on voltage detecting circuit further include: the first divider resistance, first end access described in power on electricity
Pressure；Second divider resistance, first end couple the second end of first divider resistance and the output end of the second transistor
And the association voltage is exported, the second end of second divider resistance couples the input terminal of the third transistor.
Optionally, the upper piezoelectric voltage is the supply voltage of I/O interface circuit, and the output logical subunit and second is instead
Phase device is in different power domains from the I/O interface circuit.
In order to solve the above technical problems, the embodiment of the present invention also provides a kind of electronic device, the electronic device includes upper
It states and powers on voltage detecting circuit.
In order to solve the above technical problems, the embodiment of the present invention also provides a kind of internet of things equipment, the internet of things equipment packet
Include above-mentioned electronic device.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
The voltage detecting circuit that powers on of the embodiment of the present invention may include: detection unit, be adapted to detect for power port reception
Upper piezoelectric voltage, be greater than cut-in voltage in response to the upper piezoelectric voltage, the output end of the detection unit generates conducting voltage；It is non-
Ohmic load unit couples the output end of the detection unit, control terminal access the first control voltage, the non-resistive load
Impedance value between the first end and second end of unit is by the first control voltage control, the non-resistive load unit series connection
In on electric pathway of the upper piezoelectric voltage via the detection unit to reference ground；Feedback control unit, suitable for being led according to
The pressure that is powered generates the first control voltage；Further, the voltage detecting circuit that powers on can power on electricity described respectively
Pressure is less than or equal to the turnover voltage and when the upper piezoelectric voltage is greater than the turnover voltage, passes through the first control electricity
Pressure adjusts separately the impedance value between the first end and second end of the non-resistive load unit to be hindered for the first impedance and second
Anti-, accordingly, the conducting voltage is different logic level, to indicate the size between the upper piezoelectric voltage and turnover voltage
Relationship, to determine powering mode locating for the power port.On the one hand, scheme compared to the prior art, the embodiment of the present invention
Scheme has better circuit stability, on the other hand, due to using non-resistive load list without introducing additional reference voltage
Member is as load, therefore the quiescent dissipation of the embodiment of the present invention consumption is lower, can preferably reduce the function of detection circuit
Consumption.
Furthermore, the feedback control unit may include: output logical subunit, the output logical subunit
Input terminal access the conducting voltage, be suitable for carrying out logical operation to the conducting voltage, to generate the second control voltage；It opens
Close unit, control terminal access the second control voltage, input terminal access association voltage, output end output described first
Voltage is controlled, the association voltage is associated with the upper piezoelectric voltage, is less than or equal to the overturning in response to the upper piezoelectric voltage
Voltage, the switching means conductive power on electricity in response to described so that the first control voltage is equal to the association voltage
Pressure is greater than the turnover voltage, the switch unit shutdown；Further, the output logical subunit may include: hysteresis
Comparator, input terminal access the conducting voltage, and output end output the second control voltage powers on electricity in response to described
Pressure is greater than the turnover voltage, and the conducting voltage is greater than the upper limit threshold voltage of the hysteresis loop comparator.Electricity is powered on described
Extruding existing burr makes it float near the turnover voltage, but when being not below the lower threshold voltage of the hysteresis loop comparator,
According to the hysteretic characteristic of the hysteresis loop comparator, it is ensured that the stability of the second control voltage, to be powered on described in raising
The circuit reliability of voltage detecting circuit.
Furthermore, the voltage detecting circuit that powers on can also include the first divider resistance and the second divider resistance.
Since the association voltage is dividing via first divider resistance and the second divider resistance according to the upper piezoelectric voltage
Arrive, namely act on the first transistor control terminal first control voltage be less than the upper piezoelectric voltage, therefore
The device stress of the first transistor can be reduced, influences device performance to prevent it from controlling overtension.
Detailed description of the invention
Fig. 1 is a kind of schematic block diagram for powering on voltage detecting circuit of the embodiment of the present invention.
Fig. 2 is the schematic block diagram that another kind of the embodiment of the present invention powers on voltage detecting circuit.
Fig. 3 is a kind of circuit diagram for powering on voltage detecting circuit of the embodiment of the present invention.
Fig. 4 is a kind of analogous diagram shown in Fig. 3 for powering on voltage detecting circuit.
Specific embodiment
As described in the background section, integrated circuit (Integrated Circuit, abbreviation IC) is it is generally necessary to powering on
Voltage is detected, to determine which powering mode IC is in.In the prior art, it can be carried out using voltage comparator above-mentioned
Detection, however, the program needs to additionally introduce reference voltage, may introduce additional circuit reliability problem, be also required to simultaneously
Additionally pay more circuit areas and power consumption.At the same time, low power dissipation design becomes electronic chip and design of electronic products
Mainstream.So, it when being detected to upper piezoelectric voltage, improves detection circuit stability and takes into account the low-power consumption demand of detection circuit
It is very necessary.
For techniques discussed above problem, the embodiment of the present invention proposes that a kind of power consumption is lower and that circuit reliability is high is upper
Piezoelectric voltage detection circuit comprising there are detection unit, non-resistive load unit and feedback control unit, it is single by the detection
Member detects upper piezoelectric voltage, and when the upper piezoelectric voltage is greater than cut-in voltage, detection unit generates conducting voltage, the feedback control
Unit according to the conducting voltage generate first control voltage with control the non-resistive load unit first end and second end it
Between impedance value；Further, when the upper piezoelectric voltage is less than or equal to or is less than turnover voltage (being greater than cut-in voltage), institute
It states the first control voltage and controls the impedance value difference, so that the logic level of the conducting voltage is different, described in instruction
Size relation between upper piezoelectric voltage and turnover voltage.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 1 is a kind of schematic block diagram for powering on voltage detecting circuit of the embodiment of the present invention.
The voltage detecting circuit 100 shown in FIG. 1 that powers on may include detection unit 10, non-resistive load unit 20 and anti-
Present control unit 30.
Wherein, the detection unit 10 is adapted to detect for the received upper piezoelectric voltage VddIO of power port (not shown), in response to
The upper piezoelectric voltage VddIO is greater than cut-in voltage (not shown), and the output end of the detection unit 10 generates conducting voltage Vbo.
Wherein, the size of the cut-in voltage is related to the circuit structure of the detection unit 10, and when the upper piezoelectric voltage VddIO is small
When being equal to the cut-in voltage, the output end of the detection unit 10 does not generate the conducting voltage Vbo.
As a unrestricted example, in specific implementation, the detection unit 10 may include one or more
A concatenated diode (referring to Fig. 3, Fig. 3 by multiple concatenated diode D1, D2 ... and shown for Dm, m is
Positive integer).Correspondingly, the cut-in voltage is equal to the cut-in voltage or multiple concatenated diodes of one diode
Equivalent cut-in voltage (namely the sum of cut-in voltage of each diode).Preferably, the detection unit 10 may include multiple strings
The diode of connection, in order to adjust the quantity adjustment cut-in voltage by the diode.
The non-resistive load unit 20 couples the output end of the detection unit 10, control terminal access the first control electricity
V1 is pressed, the impedance value between the first end and second end of the non-resistive load unit 20 is by the first control voltage V1 control
System, the non-resistive load unit 20 are series at the upper piezoelectric voltage VddIO via the detection unit 10 to reference Vss
On electric pathway.Wherein, the non-resistive load unit 20 is between load unit and its first end and second end other than resistance
Impedance value be controlled, such as it can be transistor or other electronic components, then the combination of either electronic component.It needs
Illustrate, the present embodiment is series at the upper piezoelectric voltage VddIO extremely to the detection unit 10 and non-resistive load unit 20
The concrete mode of the access with reference to ground Vss without specifically limited, such as both can be carried out according to mode shown in FIG. 1
Connection, then the two position can be interchanged.
The feedback control unit 30 is suitable for generating the first control voltage V1 according to the conducting voltage Vbo, with root
The impedance value between the first end and second end of the non-resistive load unit 20 is controlled according to the conducting voltage Vbo.Specifically,
It is less than or equal to turnover voltage (not shown) in response to the upper piezoelectric voltage VddIO, the first control voltage V1 control is described non-
Impedance value between the first end and second end of ohmic load unit 20 is the first impedance, so that the conducting voltage Vbo is
First logic level (such as logic low), the turnover voltage are greater than the cut-in voltage；In response to the upper piezoelectric voltage
VddIO is greater than the turnover voltage, and the first control voltage V1 controls the first end and the of the non-resistive load unit 20
Impedance value between two ends is the second impedance, so that the conducting voltage Vbo is the different from first logic level
Two logic levels (such as logic high), second impedance are greater than first impedance.
Furthermore, since the upper piezoelectric voltage VddIO detection circuit in the embodiment of the present invention can be respectively on described
When piezoelectric voltage VddIO is less than or equal to the turnover voltage and the upper piezoelectric voltage VddIO greater than the turnover voltage, pass through institute
State the first control voltage V1 by the impedance value between the first end and second end of the non-resistive load unit 20 adjust separately for
First impedance and the second impedance, accordingly, the conducting voltage Vbo are different logic levels, to indicate the upper piezoelectric voltage
Size relation between VddIO and turnover voltage, to determine powering mode locating for the power port.On the one hand, compared to
Prior art, the embodiment of the present invention are another with better circuit stability without introducing additional reference voltage
Aspect, since using non-resistive load unit 20, as load, the quiescent dissipation of the embodiment of the present invention consumption is lower,
The power consumption of detection circuit can preferably be reduced.
In specific implementation, the embodiment of the present invention powers on voltage detecting circuit 100 and can be carried on circuit board, can also be with
For in IC, namely as the electronic device for being carried on chip, the present embodiment is without specifically limited.In general, IC is usual
It at least may include two circuit domains of main circuit and input and output (Input/Output, abbreviation IO) interface circuit.Wherein, described
Main circuit may include the other function circuit other than the I/O interface circuit；The main circuit can be intellectual property
(Intellectual Property, abbreviation IP) core.The main circuit and I/O interface circuit are typically in different power domains.
It should be noted the embodiment of the present invention to the size of first impedance and the second impedance and without special
Limitation, as long as second impedance is greater than first impedance.In specific implementation, first impedance can for one compared with
Value small and appropriate, it is preferable that first impedance is greater than the equivalent impedance of the detection unit 10；Second impedance can be with
First end and second end for infinity namely the non-resistive load unit 20 complete switches off.
Together referring to Fig. 1 and Fig. 2, it is preferable that in specific implementation, the non-resistive load unit 20 may include first
Control terminal (namely the NMOS transistor of transistor (Fig. 2 is shown with NMOS transistor) MNL, the first transistor MNL
Grid) access the first control voltage V1, output end (namely drain electrode of NMOS transistor) coupling of the first transistor MNL
The output end of the detection unit 10 is connect, the input terminal (namely source electrode of NMOS transistor) of the first transistor MNL is direct
Or couple indirectly described with reference to ground Vss, wherein coupling indicates that indirect coupling can be carried out via other electronic components indirectly
It connects.It is less than or equal to the turnover voltage, the first control voltage V1 control described first in response to the upper piezoelectric voltage VddIO
Transistor MNL conducting, namely corresponding to the impedance value is 0 Ω；It is greater than the overturning electricity in response to the upper piezoelectric voltage VddIO
Pressure, the first control voltage V1 controls the first transistor MNL shutdown, namely corresponding to the impedance value is infinity.
Further, it is understood to one skilled in the art that the first transistor MNL can be unipolar transistor
(also referred to as field-effect tube, such as NMOS transistor or PMOS transistor) or bipolar junction transistor, full name are bipolar junction-type crystal
It manages (Bipolar Junction Transistor, abbreviation BJT).When transistor is unipolar transistor, control terminal is grid
Pole, input terminal and output end can be respectively source electrode and drain electrode, or exchange；When transistor is bipolar junction transistor,
Control terminal is base stage, and input terminal and output end can be respectively emitter and collector, or is exchanged.To put it more simply, herein
It is illustrated so that the first transistor MNL is NMOS transistor as an example.Those skilled in the art are further appreciated that, described
When the first transistor MNL is PMOS transistor or BJT, adjusts to being adapted to property the non-resistive load unit 20 and detection is single
The physical circuit connection type of member 10, not expansion is introduced herein.
Further, referring to fig. 2, illustrated in fig. 2 to power on voltage detecting circuit 200 and upper piezoelectric voltage shown in figure 1
The circuit structure and working principle of detection circuit 100 are almost the same, and the main distinction is, power on voltage detecting circuit described
In 200, the feedback control unit 30 may include output logical subunit 301 and switch unit 302.
Specifically, the input terminal of the output logical subunit 301 accesses the conducting voltage Vbo, the output is patrolled
It collects subelement 301 to be suitable for carrying out logical operation to the conducting voltage Vbo, to generate the second control voltage V2.It is being embodied
In, for example, the output logical subunit 301 can be logic gate device or combinational logic circuit, led with realizing to described
It is powered and presses the logical operation function of Vbo.
The control terminal access of the switch unit 302 second control voltage V2, the input terminal of the switch unit 302
Access association voltage VddIO ', the output end output of the switch unit 302 first control voltage V1, the association voltage
VddIO ' is associated with the upper piezoelectric voltage VddIO, for example, the association voltage VddIO ' can be equal to the upper piezoelectric voltage
The VddIO or association voltage VddIO ' can be in a linear relationship with the upper piezoelectric voltage VddIO, such as proportionate relationship, so that
The upper voltage detecting circuit 200 for obtaining the embodiment of the present invention can be adapted for powering on for the conventional electron pressure for being directed to 2 times or more high power
Voltage detecting, to improve detection reliability.Further, it is less than or equal to the overturning electricity in response to the upper piezoelectric voltage VddIO
Pressure, the switch unit 302 are connected, so that the first control voltage V1 is equal to the association voltage VddIO ', in response to
The upper piezoelectric voltage VddIO is greater than the turnover voltage, and the switch unit 302 turns off.
As a unrestricted example, in specific implementation, the output logical subunit 301 may include first
The input terminal of phase inverter (not shown), first phase inverter accesses the conducting voltage Vbo, the output of first phase inverter
End output the second control voltage V2, so that the logic level of the second control the voltage V2 and the conducting voltage Vbo
On the contrary.
It refers to above about the more information illustrated in fig. 2 for powering on voltage detecting circuit 200 on shown in figure 1
The associated description of piezoelectric voltage detection circuit 100, it will not go into details herein.
Fig. 3 is a kind of circuit diagram for powering on voltage detecting circuit of the embodiment of the present invention.
It is illustrated in fig. 3 to power on voltage detecting circuit 300 and illustrated in fig. 2 power on voltage detecting circuit referring to Fig. 3
200 circuit structure and working principle is almost the same, and the main distinction is, powers in voltage detecting circuit 300 described, excellent
Selection of land, the output logical subunit (referring to fig. 2) may include hysteresis loop comparator U1.
Wherein, the input terminal of the hysteresis loop comparator U1 accesses the conducting voltage Vbo, output end output described second
Control voltage V2；It is greater than the turnover voltage in response to the upper piezoelectric voltage VddIO, the conducting voltage Vbo is greater than described stagnant
Return the upper limit threshold voltage of comparator U1.Ability and technical staff understand that hysteresis loop comparator is also known as Schmidt trigger,
With hysteretic characteristic, with upper limit threshold voltage and lower threshold voltage；In general, when being input to the hysteresis loop comparator
When the level of U1 limits greatly threshold voltage thereon or is less than its lower threshold voltage, output logic overturning, and it is being input to it
Level between its lower threshold voltage and upper limit threshold voltage when, output logic it is constant.
In the present embodiment, due to the upper piezoelectric voltage VddIO be greater than the turnover voltage when, the conducting voltage
Vbo is greater than the upper limit threshold voltage of the hysteresis loop comparator U1, and the output logic of the hysteresis loop comparator U1 can be made to overturn,
To obtain the second control voltage V2；Keep it attached in the turnover voltage in addition, there is burr in the upper piezoelectric voltage VddIO
It is special according to the hysteresis of the hysteresis loop comparator U1 when closely floating, but being not below the lower threshold voltage of the hysteresis loop comparator U1
Property, it is ensured that the stability of the second control voltage V2, it is reliable with the circuit for powering on voltage detecting circuit 300 described in raising
Property.
It should be noted that the embodiment of the present invention is to the lower threshold voltage of the hysteresis loop comparator U1 without special limit
System.
Furthermore, in the present embodiment, the switch unit 302 can be any suitable switch (referring to fig. 2)
Or switching device, for example, it can be the semiconductor switch such as MOS transistor or BJT, can also be conventional switch element or
It is packaged in the integrated switch of chip, the present embodiment is without specifically limited.
As a unrestricted example, the switch unit 302 (referring to fig. 2) may include second transistor MNT,
Third transistor MND and the second phase inverter U2.Tool of the present embodiment to the second transistor MNT and third transistor MND
Body type is illustrated to put it more simply, this is sentenced both for for NMOS transistor without specifically limited.
Wherein, control terminal (namely grid of the NMOS transistor) access of the second transistor MNT second control
Voltage V2, output end (namely drain electrode of NMOS transistor) access the association voltage VddIO '；The third transistor MND
Control terminal (namely grid of NMOS transistor) access third control voltage V3, output end (namely the leakage of NMOS transistor
Pole) the coupling second transistor MNT input terminal (namely source electrode of NMOS transistor), the third transistor MND's is defeated
Enter end (namely source electrode of NMOS transistor) and directly or indirectly couples the reference ground Vss；The second phase inverter U2's
Input terminal access the second control voltage V2, output end export the third and control voltage V3.
Further, it is less than or equal to the turnover voltage, the second transistor MNT in response to the upper piezoelectric voltage VddIO
Conducting, the third transistor MND shutdown, so that the switch unit (referring to fig. 2) is connected；In response to the upper piezoelectric voltage
VddIO is greater than the turnover voltage, the second transistor MNT shutdown, the third transistor MND conducting, the switch list
Member 302 (referring to fig. 2) shutdown.
It is further preferred that the voltage detecting circuit 300 that powers on can also include the first divider resistance R1 and second point
Piezoresistance R2.Wherein, the first end of the first divider resistance R1 accesses the upper piezoelectric voltage VddIO；The second divider resistance R2
First end couple the second end of the first divider resistance R1 and the output end of the second transistor MNT and export the pass
Join voltage VddIO ', the second end of the second divider resistance R2 couples the input terminal of the third transistor MND；Optionally,
The input termination of the third transistor MND is with reference to ground Vss.
Due to the association voltage VddIO ' be according to the upper piezoelectric voltage VddIO via the first divider resistance R1 and
What the partial pressure of the second divider resistance R2 obtained, namely act on the first control voltage of the control terminal of the first transistor MNL
V1 is less than the upper piezoelectric voltage VddIO's, therefore can reduce the device stress of the first transistor MNL, to prevent it
It controls overtension and influences device performance.
In specific implementation, the first divider resistance R1 and the second divider resistance R2 can carry out structure by MOS transistor
It builds, to save circuit power consumption；Specifically, can the MOS transistor can be attached using the connection type of diode, with
So that it is in resistive, conducive to the saving of power consumption；Or the first divider resistance R1 and the second divider resistance R2 can be resistance,
Preferably, the resistance value of the two is bigger than normal, to save circuit power consumption.
Optionally, the voltage detecting circuit 300 that powers on can also include third phase inverter U3, be suitable for according to described the
Three control voltage V3 obtain its reverse voltage Detect, and external circuit (not shown) is by that can identify that the third controls voltage
The logic level of the reverse voltage Detect of V3, to determine the powering mode of the power port.
It refers to above about the more information illustrated in fig. 3 for powering on voltage detecting circuit 300 on illustrated in fig. 2
The associated description of piezoelectric voltage detection circuit 200, it will not go into details herein.
Fig. 4 is a kind of analogous diagram of upper piezoelectric voltage VddIO detection circuit shown in Fig. 3.
Fig. 3 and Fig. 4 is combined together, and the course of work for powering on voltage detecting circuit 300 is as follows.Wherein, it is indicated with " 0 "
Logic low indicates logic high with " 1 ", and assumes powering mode there are two types of the power port tools, respectively described
Upper piezoelectric voltage VddIO is 3V and 5V.
The equivalent cut-in voltage of concatenated diode D1 to Dm is about 3V, is risen in the upper piezoelectric voltage VddIO from 0V
When 3V, each diode is not opened, is also flowed through thereon without electric current, does not generate the conducting voltage Vbo namely the electric conduction
Pressing Vbo is 0, then the second control voltage V2 is 1, and the third control voltage V3 is 0, and then the second transistor MNT
Conducting, the third transistor MND shutdown, then the first control voltage V1 is 1, the first transistor MNL conducting, but thereon
There is no electric currents；During the upper piezoelectric voltage VddIO rises to 5V from 3V, each diode is opened, so that having thereon
Electric current flows through, and the conducting voltage Vbo is begun to ramp up, and the electric current IMNL of the first transistor MNL is also begun to ramp up, described
When upper piezoelectric voltage VddIO is greater than 4.1V (namely described turnover voltage), the conducting voltage Vbo is identified as 1, and then described the
Two control voltage V2 are 0, and the third control voltage V3 is 1, and then the second transistor MNT is turned off, the third crystal
Pipe MND conducting promotes the first transistor MNL to turn off, the first transistor so that the first control voltage V1 is 0
The electric current IMNL rapid drawdown of MNL is 0A, the conducting voltage Vbo abruptly increase, be the upper piezoelectric voltage VddIO and cut-in voltage it
Difference；As the upper piezoelectric voltage VddIO is continued growing from 4.1V, the conducting voltage Vbo is continued growing, the second control electricity
The electric current IMNL of the logic level and the first transistor MNL of pressure V2 and third control voltage V3 remains unchanged.
In a kind of application scenarios of the embodiment of the present invention, the upper piezoelectric voltage VddIO is I/O interface circuit (not shown)
Supply voltage, the output logical subunit 301 (not indicated in figure, reference can be made to hysteresis loop comparator U1) and the second phase inverter U2 with
The I/O interface circuit is in different power domains, for example, the output logical subunit 301 and the second phase inverter U2 can positions
It is powered in main circuit (not shown), and using the supply voltage Vddcore of main circuit, the supply voltage of the main circuit
Vddcore is generally less than the upper piezoelectric voltage VddIO.
The embodiment of the invention also discloses a kind of electronic device, the electronic device can be sealed in the form of chip
Dress.Specifically, the electronic device may include that Fig. 1 to Fig. 3 powers on voltage detecting circuit shown by any one, so that institute
Electronic device is stated with lower power consumption and preferable circuit stability.
The embodiment of the invention also discloses a kind of Internet of Things (Internet of Things) equipment, and the IOT equipment can
To include above-mentioned electronic device, so that the IOT equipment has lower power consumption and preferable circuit stability.For example, institute
Stating IOT equipment can be smart home device or wearable device etc..
It should be noted that " logic high " and " logic low " herein is opposite logic level.Wherein,
" logic high " refers to can be identified as that the level range of digital signal " 1 ", " logic low " refer to be identified
For the level range of digital signal " 0 ", specific level range is simultaneously not particularly limited.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. one kind powers on voltage detecting circuit characterized by comprising
Detection unit is adapted to detect for the received upper piezoelectric voltage of power port, is greater than cut-in voltage, institute in response to the upper piezoelectric voltage
The output end for stating detection unit generates conducting voltage；
Non-resistive load unit couples the output end of the detection unit, control terminal access the first control voltage, the non-electrical
The impedance value between the first end and second end of load unit is hindered by the first control voltage control, the non-resistive load list
Member is series on electric pathway of the upper piezoelectric voltage via the detection unit to reference ground；
Feedback control unit is suitable for generating the first control voltage according to the conducting voltage；
Wherein, it is less than or equal to turnover voltage in response to the upper piezoelectric voltage, it is negative that the first control voltage controls the non-resistive
Impedance value between the first end and second end of carrier unit is the first impedance, so that the conducting voltage is the first logic electricity
Flat, the turnover voltage is greater than the cut-in voltage；It is greater than the turnover voltage, first control in response to the upper piezoelectric voltage
It is the second impedance that voltage processed, which controls the impedance value between the first end and second end of the non-resistive load unit, so that described
Conducting voltage is the second logic level different from first logic level, and second impedance is greater than first impedance.
2. according to claim 1 power on voltage detecting circuit, which is characterized in that the detection unit include one or
Multiple concatenated diodes.
3. according to claim 1 power on voltage detecting circuit, which is characterized in that the non-resistive load unit includes:
The first transistor, control terminal access the first control voltage, output end couple the output end of the detection unit,
Its input terminal directly or indirectly couples the reference ground, is less than or equal to the turnover voltage in response to the upper piezoelectric voltage,
The first control voltage controls the first transistor conducting, is greater than the turnover voltage, institute in response to the upper piezoelectric voltage
It states the first control voltage and controls the first transistor shutdown.
4. according to claim 3 power on voltage detecting circuit, which is characterized in that the first transistor is NMOS crystal
Pipe.
5. according to claim 1 power on voltage detecting circuit, which is characterized in that the feedback control unit includes:
Logical subunit is exported, input terminal accesses the conducting voltage, it is suitable for carrying out logical operation to the conducting voltage, with
Generate the second control voltage；
Switch unit, control terminal access the second control voltage, input terminal access association voltage, output end export institute
The first control voltage is stated, the association voltage is associated with the upper piezoelectric voltage, is less than or equal to institute in response to the upper piezoelectric voltage
Turnover voltage, the switching means conductive are stated, so that the first control voltage is equal to the association voltage, in response to described
Upper piezoelectric voltage is greater than the turnover voltage, the switch unit shutdown.
6. according to claim 5 power on voltage detecting circuit, which is characterized in that the output logical subunit includes:
First phase inverter, input terminal access the conducting voltage, output end output the second control voltage.
7. according to claim 5 power on voltage detecting circuit, which is characterized in that the output logical subunit includes:
Hysteresis loop comparator, input terminal access the conducting voltage, output end output the second control voltage, on described
Piezoelectric voltage is greater than the turnover voltage, and the conducting voltage is greater than the upper limit threshold voltage of the hysteresis loop comparator.
8. according to claim 5 power on voltage detecting circuit, which is characterized in that the switch unit includes:
Second transistor, control terminal access the second control voltage, output end access the association voltage；
Third transistor, control terminal access third and control voltage, and output end couples the input terminal of the second transistor, institute
The input terminal for stating third transistor directly or indirectly couples the reference ground；
Second phase inverter, input terminal access the second control voltage, output end export the third and control voltage；
Wherein, it is less than or equal to the turnover voltage, the second transistor conducting, the third crystalline substance in response to the upper piezoelectric voltage
Body pipe shutdown, so that the switching means conductive；It is greater than the turnover voltage in response to the upper piezoelectric voltage, described second is brilliant
The shutdown of body pipe, the third transistor conducting, the switch unit shutdown.
9. according to claim 8 power on voltage detecting circuit, which is characterized in that further include:
First divider resistance, first end access the upper piezoelectric voltage；
Second divider resistance, first end couple the second end of first divider resistance and the output end of the second transistor
And the association voltage is exported, the second end of second divider resistance couples the input terminal of the third transistor.
10. according to claim 8 power on voltage detecting circuit, which is characterized in that the upper piezoelectric voltage is I/O interface electricity
The supply voltage on road, the output logical subunit and the second phase inverter are in different power domains from the I/O interface circuit.
11. a kind of electronic device, which is characterized in that including powering on voltage detecting electricity described in any one of claims 1 to 10
Road.
12. a kind of internet of things equipment, which is characterized in that including the electronic device described in claim 11.
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| CN201810048419.2A CN110058140B (en) | 2018-01-18 | 2018-01-18 | Go up electric voltage detection circuitry, electron device and thing networking device |
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| CN201810048419.2A CN110058140B (en) | 2018-01-18 | 2018-01-18 | Go up electric voltage detection circuitry, electron device and thing networking device |
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Cited By (1)
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Also Published As
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| CN110058140B (en) | 2021-09-07 |
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