CN110047846B - Display panel, manufacturing method of display panel and intelligent device - Google Patents
Display panel, manufacturing method of display panel and intelligent device Download PDFInfo
- Publication number
- CN110047846B CN110047846B CN201910242538.6A CN201910242538A CN110047846B CN 110047846 B CN110047846 B CN 110047846B CN 201910242538 A CN201910242538 A CN 201910242538A CN 110047846 B CN110047846 B CN 110047846B
- Authority
- CN
- China
- Prior art keywords
- light
- layer
- transmitting
- display panel
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/026—Details of the structure or mounting of specific components
- H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
Abstract
The invention provides a display panel, a manufacturing method of the display panel and intelligent equipment. The display panel comprises a display area, a light-transmitting display area and connecting wires; the display area comprises a first thin film transistor layer, a second thin film transistor layer and a first light-emitting structure located right above the first thin film transistor layer, and the second thin film transistor layer is close to the boundary between the display area and the light-transmitting display area; the light-transmitting display area comprises a light-transmitting lamination and a second light-emitting structure positioned above the light-transmitting lamination; the connecting wire crosses the boundary of the display area and the light-transmitting display area and is used for electrically connecting the second thin film transistor layer and the second light-emitting structure; when the light-emitting surface of the display panel is parallel to the horizontal plane, the projection of the second thin film transistor layer on the horizontal plane and the projection of the second light-emitting structure on the horizontal plane are not overlapped.
Description
Technical Field
The invention relates to the field of electronic display, in particular to a display panel, a manufacturing method of the display panel and intelligent equipment.
Background
In order to realize real comprehensive screen display in the intelligent equipment, the latest intelligent equipment integrates the camera below the operation area of the display panel, and the display panel above the camera can have the functions of electronic display and light transmission. As shown in fig. 1 and fig. 2, taking a smart phone as an example, a display panel of the smart phone includes a light-transmitting display area 010 and an operation area 012, and the position of the light-transmitting display area 010 corresponds to a camera 011 located below the display panel. The display panel 012 includes a flexible substrate 0121, a thin film transistor layer 0122, a light emitting layer 0123, an encapsulation layer 0124, a touch layer 0125, and a glass cover 0126.
The thin film transistor layer 0122 contains a large number of metal wires, and the metal wires can reduce the light transmittance of the light-transmitting display area 010 and affect the imaging quality of the camera. Therefore, improvement of this phenomenon is required.
Disclosure of Invention
The invention provides a display panel, a manufacturing method of the display panel and intelligent equipment, which aim to improve the light transmittance of the display panel above a camera.
In order to solve the above problems, the present invention provides a display panel, which includes a display area, a transparent display area, and a connection trace; wherein the content of the first and second substances,
the display area comprises a first thin film transistor layer, a second thin film transistor layer and a first light-emitting structure positioned right above the first thin film transistor layer, and the second thin film transistor layer is close to the boundary of the display area and the light-transmitting display area;
the light-transmitting display area comprises a light-transmitting lamination and a second light-emitting structure positioned above the light-transmitting lamination;
the connecting wire crosses the boundary of the display area and the light-transmitting display area and is used for electrically connecting the second thin film transistor layer and the second light-emitting structure; wherein the content of the first and second substances,
when the light-emitting surface of the display panel is parallel to the horizontal plane, the projection of the second thin film transistor layer on the horizontal plane and the projection of the second light-emitting structure on the horizontal plane are not coincident.
According to one aspect of the invention, the first thin film transistor layer comprises a plurality of thin film transistors, and the second thin film transistor layer comprises a plurality of thin film transistors; and the density of the thin film transistors in the second thin film transistor layer is greater than that of the thin film transistors in the first thin film transistor layer.
According to one aspect of the present invention, the material forming the connection trace is a transparent conductive material.
According to one aspect of the present invention, the display panel further includes: and the plurality of light-transmitting support columns are positioned above the first light-emitting structure and the second light-emitting structure, wherein the heights of the plurality of light-transmitting support columns are the same.
According to one aspect of the present invention, the light-transmissive display region includes a plurality of second light-emitting structures, and a gap exposing the light-transmissive laminate is provided between any two adjacent second light-emitting structures.
According to one aspect of the invention, the light-transmitting laminated layer is provided with a light-transmitting opening corresponding to the gap, and the light-transmitting opening penetrates through the light-transmitting laminated layer.
According to one aspect of the present invention, the display panel further includes: the substrate is positioned below the display area and the light-transmitting display area and comprises a flexible substrate, a first sealing layer positioned above the flexible substrate and a buffer layer positioned above the first sealing layer.
According to one aspect of the invention, the light-transmitting opening penetrates through the buffer layer, and the bottom of the light-transmitting opening is located in the first sealing layer.
According to one aspect of the invention, the light-transmitting opening penetrates through the buffer layer and the first sealing layer, and the bottom of the light-transmitting opening is located in the flexible substrate; and the light-transmitting display region further comprises a second sealing layer, and the second sealing layer is positioned between the light-transmitting lamination layer and the second light-emitting structure and covers the light-transmitting opening.
According to one aspect of the present invention, the second light emitting structure includes a second anode including a transparent conductive layer and a metal layer over the transparent conductive layer; when the light-emitting surface of the display panel is parallel to the horizontal plane, the projection of the metal layer on the horizontal plane is smaller than or equal to the projection of the transparent conductive layer in the horizontal direction.
Correspondingly, the invention also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate;
forming a first thin film transistor layer, a second thin film transistor layer adjacent to the first thin film transistor layer, and a light-transmitting lamination layer adjacent to the second thin film transistor layer on the substrate;
forming a first anode electrically connected with the first thin film transistor layer, a connecting wire electrically connected with the second thin film transistor layer and a second anode electrically connected with the connecting wire; the first anode is positioned above the first thin film transistor layer, the second anode is positioned above the light-transmitting lamination, and the connecting wire is positioned between the first anode and the second anode;
forming a first light emitting structure covering the first anode and a second light emitting structure covering the second anode.
According to one aspect of the present invention, the material forming the connection trace is a transparent conductive material.
According to one aspect of the present invention, after forming the light emitting structure, the method further includes: and forming a plurality of light-transmitting support columns which are positioned above the first light-emitting structure and the second light-emitting structure, wherein the heights of the light-transmitting support columns are the same.
Correspondingly, the invention also provides intelligent equipment which comprises the display panel and the light sensing unit, wherein the light sensing unit is positioned below the display panel; the display panel comprises a display area, a light-transmitting display area and a connecting wire, and the projection of the light sensing unit on the horizontal plane is superposed with the projection of the light-transmitting display area on the horizontal plane.
According to one aspect of the present invention, the light sensing unit includes a camera.
The metal layer of the light-transmitting display area of the display panel is moved outwards, and the transparent conductive layer is used for replacing the anode metal wiring, so that the light transmittance of the light-transmitting display area is greatly improved, and the imaging quality of the camera is improved.
Drawings
Fig. 1 is a schematic structural diagram of a display panel of a smart device in the prior art;
FIG. 2 is a schematic cross-sectional view along AA' of FIG. 1;
FIG. 3 is a schematic top view of a display panel in one embodiment of the invention;
fig. 4 to 12 are schematic cross-sectional views of a display panel in different process steps according to an embodiment of the present invention;
FIG. 13 is a schematic cross-sectional view of a display panel in another embodiment of the invention;
FIG. 14 is a schematic cross-sectional view of a display panel in a third embodiment of the present invention;
FIG. 15 is a schematic cross-sectional view of a display panel in a fourth embodiment of the present invention;
fig. 16 to 20 are schematic cross-sectional views of a display panel in a fifth embodiment of the present invention in different process steps.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
In order to improve the light transmittance of the display panel above the camera, the present invention provides a display panel, and the present invention will be described in detail with reference to specific embodiments. Referring to fig. 3 and 12, fig. 3 is a schematic top view of a display panel in an embodiment of the present invention, and fig. 12 is a schematic cross-sectional view of the display panel in an embodiment of the present invention.
The invention provides a display panel, a manufacturing method of the display panel and intelligent equipment, which aim to improve the light transmittance of the display panel above a camera.
Referring to fig. 3, in the present embodiment, the display panel includes a display area 10, a light-transmissive display area 20, and a connection trace 30; the display area 10 includes a first thin-film transistor layer, a second thin-film transistor layer 202, and a first light-emitting structure 101 located right above the first thin-film transistor layer, where the second thin-film transistor layer 202 is close to a boundary between the display area 10 and the light-transmitting display area 20. The first thin-film-transistor layer is shielded by the first light-emitting structure 101, which is not shown in fig. 3.
The light-transmitting display region 20 includes a light-transmitting lamination layer and a second light-emitting structure 201 located above the light-transmitting lamination layer, and the second light-emitting structure 201 is close to the boundary between the display region 10 and the light-transmitting display region 20.
The connecting trace 30 crosses the boundary between the display region 10 and the transparent display region 20, and is used for electrically connecting the second thin-film transistor layer 202 and the second light-emitting structure 201. Preferably, the connecting trace 30 is made of a transparent conductive material, such as Indium Tin Oxide (ITO).
In the present invention, in order to ensure the light transmittance of the light-transmitting display region, when the light emitting surface of the display panel is parallel to the horizontal plane, the projection of the second thin-film transistor layer 202 on the horizontal plane and the projection of the second light-emitting structure 201 on the horizontal plane are not overlapped.
In this embodiment, the display panel further includes: the substrate is positioned below the display area and the light-transmitting display area and comprises a flexible substrate, a first sealing layer positioned above the flexible substrate and a buffer layer positioned above the first sealing layer.
As shown in fig. 12, in the present embodiment, the first thin film transistor layer includes a plurality of thin film transistors, and the second thin film transistor layer includes a plurality of thin film transistors. All of the thin film transistors in the first thin film transistor layer are electrically connected to the first light emitting structure 101; a part of the thin film transistors in the second thin film transistor layer is electrically connected to the first light emitting structure 101, and the rest of the thin film transistors are electrically connected to the second light emitting structure 201. Accordingly, the density of thin film transistors in the second thin film transistor layer is greater than the density of thin film transistors in the first thin film transistor layer.
In this embodiment, referring to fig. 4 to 12, a plurality of thin film transistors in the first thin film transistor layer and the second thin film transistor layer have the same structure, including: an insulating substrate 110; an active region 120, wherein the active region 120 is located above the insulating substrate 110, and includes a channel region and a source region and a drain region respectively located at two sides of the channel region; a gate dielectric layer 130, wherein the gate dielectric layer 130 covers the active region 120; a gate metal 140, wherein the gate metal 140 is located above the gate dielectric layer 130 and covers the channel region; an interlayer dielectric layer 150, wherein the interlayer dielectric layer 150 covers the gate metal 140; the source-drain wires 160 penetrate through the interlayer dielectric layer 150 and are electrically connected with the source region and the drain region; and the planarization layer 170 covers the interlayer dielectric layer 150 and is provided with a plurality of through holes exposing the source/drain traces 160.
The light-transmissive stack of the light-transmissive display region comprises: a light transmissive substrate formed by an extension of insulating substrate 110 in the thin-film transistor layer adjacent to the light transmissive region; a first transparent dielectric layer formed by extending a gate dielectric layer 130 of an insulating substrate 110 in the thin film transistor layer adjacent to the transparent region; the second light-transmitting medium layer is formed by extending an interlayer medium layer 150 in the thin film transistor layer adjacent to the light-transmitting area; and a planarization layer 170, wherein the planarization layer 170 is formed by extending the planarization layer 170 in the thin-film transistor layer adjacent to the light-transmitting region.
The first light emitting structure 101 includes: a first anode 180, where the first anode 180 is located above the planarization layer 170 and is electrically connected to the source/drain trace 160 in the first thin film transistor layer through the through hole; a first pixel defining layer covering the planarization layer 170 and having a first opening exposing the first anode electrode 180; a first luminescent material layer located in the first opening; a first cathode over the first layer of light emitting material.
The second light emitting structure 201 includes: a second anode 280, wherein the second anode 280 is located above the planarization layer 170 and electrically connected to the source/drain trace 160 through the connection trace; a second pixel defining layer covering the planarization layer 170 and having a second opening exposing the second anode electrode 280; a second layer of light emitting material in the opening; a second cathode over the second layer of light emitting material.
Preferably, the first anode 180 is a transparent conductive layer, and the first light emitting structure 101 further includes a first metal layer 182 over the first anode 180. The second anode 280 is a transparent conductive layer, and the second light emitting structure 201 further includes a second metal layer 282 over the second anode 280. When the light emitting surface of the display panel is parallel to the horizontal plane, the projection of the first metal layer 182 on the horizontal plane is less than or equal to the projection of the first anode 180 in the horizontal direction; the projection of the second metal layer 282 on the horizontal plane is less than or equal to the projection of the second anode 280 in the horizontal direction.
In another embodiment of the present invention, referring to fig. 13, fig. 13 is a schematic cross-sectional view of a display panel in another embodiment of the present invention. Wherein the display panel further comprises: a plurality of light-transmitting support pillars 40, the plurality of light-transmitting support pillars 40 being located above the first light-emitting structure 101 and the second light-emitting structure 201, the heights of the plurality of light-transmitting support pillars 40 being the same.
Referring to fig. 14 and 15, fig. 14 is a schematic cross-sectional view of a display panel in a third embodiment of the present invention, and fig. 15 is a schematic cross-sectional view of a display panel in a fourth embodiment of the present invention.
Referring to fig. 14, in the third embodiment of the present invention, the light-transmissive display region includes a plurality of second light-emitting structures, and a gap 50 exposing the light-transmissive stack layer is formed between any two adjacent second light-emitting structures. The light-transmitting laminated layer is provided with a light-transmitting opening 510 corresponding to the gap 50, and the light-transmitting opening 510 penetrates through the light-transmitting laminated layer. In the present embodiment, the light-transmitting opening 510 penetrates through the buffer layer 116, and the bottom thereof is located in the first sealing layer 114.
Referring to fig. 15, in the fourth embodiment of the present invention, the light-transmitting opening 510 penetrates through the buffer layer 116 and the first sealing layer 114, and the bottom thereof is located in the flexible substrate 112. At this time, in order to ensure the sealing performance of the display panel and prevent water and oxygen from invading from the bottom of the display panel, the light-transmitting display region further includes a second sealing layer 520, and the second sealing layer 520 is located between the light-transmitting laminate and the second light-emitting structure 201 and covers the light-transmitting opening 510.
Correspondingly, the invention also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate 110;
forming a first thin-film transistor layer, a second thin-film transistor layer adjacent to the first thin-film transistor layer, and a light-transmitting laminate adjacent to the second thin-film transistor layer on the substrate 110;
forming a first anode 180 electrically connected to the first thin film transistor layer, a connection trace 30 electrically connected to the second thin film transistor layer, and a second anode 280 electrically connected to the connection trace 30; wherein the first anode 180 is located above the first thin film transistor layer, the second anode 280 is located above the light-transmissive stack, and the connection trace 30 is located between the first anode 180 and the second anode 280;
a first light emitting structure 101 covering the first anode 180 and a second light emitting structure 201 covering the second anode 280 are formed.
Specifically, the material forming the connection trace 30 is a transparent conductive material.
The method will be described in detail with reference to fig. 4 to 12.
First, a substrate 110 is provided. In this embodiment, as shown in fig. 4, the substrate 110 is an insulating substrate 110. Preferably, the insulating substrate 110 includes a flexible substrate 112, a first sealing layer 114 over the flexible substrate 112, and a buffer layer 116 over the first sealing layer 114. The flexible substrate 112 may be a polyimide film, the first sealing layer 114 may be a thin film sealing layer composed of an organic film and an inorganic film which are stacked, and the buffer layer 116 may be polysilicon or low temperature polysilicon.
Thereafter, a first thin-film-transistor layer, a second thin-film-transistor layer adjacent to the first thin-film-transistor layer, and a light-transmissive stack adjacent to the second thin-film-transistor layer 202 are formed on the insulating substrate 110. The first thin-film transistor layer comprises a plurality of thin-film transistors, and the second thin-film transistor layer 202 comprises a plurality of thin-film transistors; wherein the density of the thin film transistors in the second thin film transistor layer 202 is greater than the density of the thin film transistors in the first thin film transistor layer.
Specifically, as shown in fig. 4, an active region 120 is formed on the insulating substrate 110, where the active region 120 includes a channel region and a source region and a drain region respectively located at two sides of the channel region. Then, as shown in fig. 5, a gate dielectric layer 130 covering the active region 120 and a gate metal 140 located above the gate dielectric layer 130 and covering the channel region are formed. Then, as shown in fig. 6, an interlayer dielectric layer 150 is formed to cover the gate metal 140.
Preferably, as shown in fig. 6, after the forming of the interlayer dielectric layer 150, the following steps are further included: a via 200 is formed through the first sealing layer 114, the buffer layer 116, the gate dielectric layer 130, and the interlayer dielectric layer 150. Thereafter, as shown in fig. 7, the through hole 200 is filled with a flexible organic material. The through hole 200 is located in a bending area in a display area of the display panel, a through hole is formed in the bending area, and the through hole is filled with a flexible organic material 210, so that the flexibility of the bending area of the display panel can be further enhanced, and the display panel is not easy to break when bent.
Then, as shown in fig. 8, source/drain traces 160 penetrating through the interlayer dielectric layer 150 and electrically connected to the source and drain regions are formed.
Then, as shown in fig. 9, a planarization layer 170 covering the first thin-film transistor layer and a planarization layer 170 covering the second thin-film transistor layer and the light-transmitting laminate are formed, where the planarization layer 170 has a through hole exposing the source/drain trace 160 in the first thin-film transistor layer and the second thin-film transistor layer 202.
Then, as shown in fig. 10, a first anode 180, a connection trace 30 and a second anode 280 electrically connected to the source-drain trace 160 through the via hole are formed. The first anode 180 is a transparent conductive layer, and the first light emitting structure 101 further includes a first metal layer 182 over the first anode 180. The second anode 280 is a transparent conductive layer, and the second light emitting structure 201 further includes a second metal layer 282 over the second anode 280. When the light emitting surface of the display panel is parallel to the horizontal plane, the projection of the first metal layer 182 on the horizontal plane is less than or equal to the projection of the first anode 180 in the horizontal direction; the projection of the second metal layer 282 on the horizontal plane is less than or equal to the projection of the second anode 280 in the horizontal direction.
Then, as shown in fig. 11, a first pixel layer and a second pixel layer covering the planarization layer 170 are formed, in this embodiment, the first pixel layer and the second pixel layer are insulating materials 190 formed at the same time, and the insulating materials 190 have a first opening exposing the first anode 180 and a second opening exposing the second anode 280.
Finally, a light emitting material and a cathode are formed to cover the first opening and the second opening, and a display panel as shown in fig. 12 is formed.
In another embodiment of the present invention, referring to fig. 13, fig. 13 is a schematic cross-sectional view of a display panel in another embodiment of the present invention in a different process step. After forming the light emitting structure, the method further comprises: forming a plurality of light-transmitting support pillars 40, wherein the plurality of light-transmitting support pillars 40 are located above the first light-emitting structure 101 and the second light-emitting structure 201, and the heights of the plurality of light-transmitting support pillars 40 are the same.
Referring to fig. 14 and 15, fig. 14 is a schematic cross-sectional view of a display panel in a third embodiment of the present invention, and fig. 15 is a schematic cross-sectional view of a display panel in a fourth embodiment of the present invention.
Referring to fig. 14, in the third embodiment of the present invention, the light-transmissive display region includes a plurality of second light-emitting structures, and a gap 50 exposing the light-transmissive stack layer is formed between any two adjacent second light-emitting structures. The light-transmitting laminated layer is provided with a light-transmitting opening 510 corresponding to the gap 50, and the light-transmitting opening 510 penetrates through the light-transmitting laminated layer. In the present embodiment, the light-transmitting opening 510 penetrates through the buffer layer 116, and the bottom thereof is located in the first sealing layer 114.
Referring to fig. 15, in the fourth embodiment of the present invention, the light-transmitting opening 510 penetrates through the buffer layer 116 and the first sealing layer 114, and the bottom thereof is located in the flexible substrate 112. At this time, in order to ensure the sealing performance of the display panel and prevent water and oxygen from invading from the bottom of the display panel, the light-transmitting display region further includes a second sealing layer 520, and the second sealing layer 520 is located between the light-transmitting laminate and the second light-emitting structure 201 and covers the light-transmitting opening 510.
Referring to fig. 16 to 20, fig. 16 to 20 are schematic cross-sectional views of a display panel in a fifth embodiment of the present invention in different process steps.
As shown in fig. 16, in the present embodiment, the planarization layer includes a planarization layer 170 located in the display region 10 and a plurality of planarization islands 172 located in the light-transmissive display region. The material forming the planarization layer 170 and the plurality of planarization islands 172 is a light-transmissive organic material.
The planarization layer 170 has an opening thereon to expose the source/drain electrode 160. The planarization layer 170 also has openings between adjacent planarization islands 172. The plurality of planarized islands 172 serve to support the anode and the light emitting material of the light emitting layer. The plurality of planarized islands 172 constitute a display area in the light transmissive display region 20.
The planarized islands 172 are slightly larger in area and size than the anode, allowing for process alignment accuracy. The areas between two adjacent planarization islands 172 are light-transmissive films composed of transparent insulating layers in the thin-film-transistor layers, which constitute light-transmissive areas in the light-transmissive display region 20.
Thereafter, referring to fig. 17, the first anode 180, the connection trace 30, and the second anode 280 are formed. The first anode is electrically connected to the source/drain electrode 160 through the opening on the planarization layer 170. The connection trace 30 is located in an opening between the planarization layer 170 and an adjacent planarization island 172. The second anode 280 is electrically connected to the source/drain electrode 160 through the connection trace 30.
Thereafter, referring to fig. 18, a first metal layer 182 over the first anode 180 and a second metal layer 282 over the second anode 280 are formed.
Thereafter, referring to fig. 19, a pixel defining layer 190 is formed covering the planarization layer 170 and the plurality of planarization islands 172. The pixel defining layer 190 has an opening exposing the first and second anode metals 182 and 282. Preferably, the pixel defining layer 190 further has an opening exposing a region between two adjacent planarization islands 172.
Finally, referring to fig. 20, a plurality of light-transmissive support posts 40 are formed over the row-pixel defining layer 190. The heights of the plurality of light-transmitting support columns 40 are the same.
Correspondingly, the invention also provides intelligent equipment which comprises the display panel and the light sensing unit, wherein the light sensing unit is positioned below the display panel; the display panel comprises a display area, a light-transmitting display area and a connecting wire, and the projection of the light sensing unit on the horizontal plane is superposed with the projection of the light-transmitting display area on the horizontal plane.
Preferably, the light sensing unit includes a camera. Of course, the light sensing unit may also be other light sensors such as a fingerprint recognition device.
The metal layer of the light-transmitting display area of the display panel is moved outwards, and the transparent conductive layer is used for replacing the anode metal wiring, so that the light transmittance of the light-transmitting display area is greatly improved, and the imaging quality of the camera is improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (13)
1. A display panel is characterized in that the display panel comprises a display area, a light-transmitting display area and connecting wires; wherein the content of the first and second substances,
the display area comprises a first thin film transistor layer, a second thin film transistor layer and a first light-emitting structure positioned right above the first thin film transistor layer, and the second thin film transistor layer is close to the boundary of the display area and the light-transmitting display area;
the light-transmitting display area comprises a light-transmitting lamination and a second light-emitting structure positioned above the light-transmitting lamination, the second light-emitting structure comprises a second anode, and the second anode comprises a transparent conductive layer and a metal layer positioned above the transparent conductive layer;
the connecting wire crosses the boundary of the display area and the light-transmitting display area and is used for electrically connecting the second thin film transistor layer and the second light-emitting structure; wherein the connection trace is connected to the second anode in the second light emitting structure and is formed by the transparent conductive layer in the second anode; wherein the content of the first and second substances,
when the light-emitting surface of the display panel is parallel to the horizontal plane, the projection of the second thin film transistor layer on the horizontal plane and the projection of the second light-emitting structure on the horizontal plane are not coincident.
2. The display panel of claim 1, wherein the first thin-film-transistor layer comprises a plurality of thin-film transistors, and the second thin-film-transistor layer comprises a plurality of thin-film transistors; wherein the content of the first and second substances,
the density of the thin film transistors in the second thin film transistor layer is greater than the density of the thin film transistors in the first thin film transistor layer.
3. The display panel according to claim 1, characterized in that the display panel further comprises:
and the plurality of light-transmitting support columns are positioned above the first light-emitting structure and the second light-emitting structure, wherein the heights of the plurality of light-transmitting support columns are the same.
4. The display panel according to claim 1, wherein the light-transmissive display region comprises a plurality of second light-emitting structures, and a gap is formed between any two adjacent second light-emitting structures to expose the light-transmissive laminate.
5. The display panel according to claim 4, wherein the light-transmissive laminate has a light-transmissive opening thereon corresponding to the gap, and the light-transmissive opening penetrates through the light-transmissive laminate.
6. The display panel according to claim 5, characterized in that the display panel further comprises:
the substrate is positioned below the display area and the light-transmitting display area and comprises a flexible substrate, a first sealing layer positioned above the flexible substrate and a buffer layer positioned above the first sealing layer.
7. The display panel according to claim 6, wherein the light-transmitting opening penetrates the buffer layer, and a bottom portion thereof is located in the first sealing layer.
8. The display panel according to claim 6, wherein the light-transmitting opening penetrates the buffer layer and the first sealing layer, and a bottom portion thereof is located in the flexible substrate; and the light-transmitting display region further comprises a second sealing layer, and the second sealing layer is positioned between the light-transmitting lamination layer and the second light-emitting structure and covers the light-transmitting opening.
9. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a substrate;
forming a first thin film transistor layer, a second thin film transistor layer adjacent to the first thin film transistor layer, and a light-transmitting lamination layer adjacent to the second thin film transistor layer on the substrate;
forming a first anode electrically connected with the first thin film transistor layer, a connecting wire electrically connected with the second thin film transistor layer and a second anode electrically connected with the connecting wire; the first anode is positioned above the first thin film transistor layer, the second anode is positioned above the light-transmitting lamination, and the connecting wire is positioned between the first anode and the second anode; the second anode comprises a transparent conductive layer and a metal layer positioned above the transparent conductive layer, and the connecting trace is formed by the transparent conductive layer in the second anode;
forming a first light emitting structure covering the first anode and a second light emitting structure covering the second anode.
10. The method for manufacturing a display panel according to claim 9, wherein the material forming the connection trace is a transparent conductive material.
11. The method for manufacturing a display panel according to claim 9, wherein after the forming the light emitting structure, the method further comprises:
and forming a plurality of light-transmitting support columns which are positioned above the first light-emitting structure and the second light-emitting structure, wherein the heights of the light-transmitting support columns are the same.
12. A smart device, comprising the display panel of any one of claims 1-8 and a light sensing unit, the light sensing unit being located below the display panel; wherein the content of the first and second substances,
the display panel comprises a display area, a light-transmitting display area and a connecting wire, and the projection of the light sensing unit on the horizontal plane is superposed with the projection of the light-transmitting display area on the horizontal plane.
13. The smart device of claim 12 wherein the light sensing unit comprises a camera.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910242538.6A CN110047846B (en) | 2019-03-28 | 2019-03-28 | Display panel, manufacturing method of display panel and intelligent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910242538.6A CN110047846B (en) | 2019-03-28 | 2019-03-28 | Display panel, manufacturing method of display panel and intelligent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110047846A CN110047846A (en) | 2019-07-23 |
| CN110047846B true CN110047846B (en) | 2021-06-22 |
Family
ID=67275433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910242538.6A Active CN110047846B (en) | 2019-03-28 | 2019-03-28 | Display panel, manufacturing method of display panel and intelligent device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110047846B (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110492018A (en) * | 2019-08-09 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | A kind of display device |
| CN110491918A (en) * | 2019-08-09 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110504287B (en) * | 2019-08-09 | 2020-10-16 | 武汉华星光电半导体显示技术有限公司 | Display panel and electronic device |
| CN110571252A (en) * | 2019-08-20 | 2019-12-13 | 武汉华星光电半导体显示技术有限公司 | Array substrate, array substrate manufacturing method and display device |
| CN110544433A (en) * | 2019-08-29 | 2019-12-06 | 合肥维信诺科技有限公司 | Display substrate, display panel and display device |
| CN110853497B (en) * | 2019-10-25 | 2021-02-26 | 武汉华星光电半导体显示技术有限公司 | Display panel and terminal device thereof |
| KR20220131490A (en) * | 2020-01-23 | 2022-09-28 | 보에 테크놀로지 그룹 컴퍼니 리미티드 | Display substrate and manufacturing method thereof |
| CN111326560B (en) | 2020-01-23 | 2023-08-22 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN113439338A (en) * | 2020-01-23 | 2021-09-24 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof |
| CN111834538B (en) * | 2020-02-26 | 2021-07-06 | 昆山国显光电有限公司 | Display panel, display device, and method for manufacturing display panel |
| CN111312796B (en) * | 2020-04-02 | 2023-03-24 | 昆山国显光电有限公司 | Display panel and display device |
| CN111583818B (en) * | 2020-05-07 | 2021-07-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111834418B (en) * | 2020-05-19 | 2022-07-12 | 昆山国显光电有限公司 | Display panel and electronic device |
| US11522031B2 (en) | 2020-06-01 | 2022-12-06 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel, display device, and manufacturing method of display panel |
| CN111725266A (en) * | 2020-06-01 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
| EP4156278A4 (en) * | 2020-06-08 | 2023-11-22 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Display apparatus and electronic device |
| CN111725276B (en) * | 2020-06-11 | 2024-01-30 | 武汉华星光电半导体显示技术有限公司 | Light emitting device, display device and preparation method of light emitting device |
| CN111755613B (en) * | 2020-06-16 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
| CN111899648B (en) * | 2020-08-24 | 2022-09-20 | 云谷（固安）科技有限公司 | Display panel and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108376696A (en) * | 2017-09-30 | 2018-08-07 | 云谷（固安）科技有限公司 | Terminal and display screen |
| CN109148537A (en) * | 2018-08-24 | 2019-01-04 | 维沃移动通信有限公司 | Display panel and preparation method and electronic equipment |
-
2019
- 2019-03-28 CN CN201910242538.6A patent/CN110047846B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108376696A (en) * | 2017-09-30 | 2018-08-07 | 云谷（固安）科技有限公司 | Terminal and display screen |
| CN109148537A (en) * | 2018-08-24 | 2019-01-04 | 维沃移动通信有限公司 | Display panel and preparation method and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110047846A (en) | 2019-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110047846B (en) | Display panel, manufacturing method of display panel and intelligent device | |
| US11910691B2 (en) | Display panel, manufacturing method thereof, and display device | |
| KR20220110155A (en) | display device | |
| CN111509136B (en) | OLED display panel | |
| CN100502608C (en) | Flat panel display and method of fabricating the same | |
| CN110112184B (en) | Display panel and electronic device | |
| CN111682048B (en) | Light-transmitting display panel and display panel | |
| CN110416226B (en) | Display panel, manufacturing method thereof and display device | |
| CN110265470B (en) | Display device, display panel and manufacturing method thereof | |
| KR20170096646A (en) | Organic light emitting display device and the fabrication method thereof | |
| CN211654824U (en) | Transparent OLED substrate, transparent display panel, array substrate, display screen and display device | |
| CN109920923B (en) | Organic light emitting diode device, preparation method, display panel and display device | |
| US11963382B2 (en) | Display substrate and preparation method thereof, and display device | |
| KR20160149385A (en) | Flexible display device and the fabrication method thereof | |
| US20200058896A1 (en) | Display panel and display device | |
| US20200251678A1 (en) | Organic electroluminescent display panel, manufacturing method thereof and display device | |
| US20210159287A1 (en) | Organic light emitting diode display panel and manufacturing method thereof | |
| US11863853B2 (en) | Display panel and display device | |
| US20220407032A1 (en) | Display panel and preparation method therefor, and display device | |
| CN113471257B (en) | Display panel and mobile terminal | |
| US20220293692A1 (en) | Array substrate, method for manufacturing the same, display panel and display device | |
| CN112599536A (en) | Display panel, manufacturing method thereof and spliced display panel | |
| CN111405084A (en) | Display panel and intelligent terminal | |
| WO2021155627A1 (en) | Oled display device | |
| US10761626B2 (en) | Touch sensor and manufacturing method thereof, and display device including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |