CN110047781A - Laser annealing apparatus and laser anneal method - Google Patents
Laser annealing apparatus and laser anneal method Download PDFInfo
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- CN110047781A CN110047781A CN201910195260.1A CN201910195260A CN110047781A CN 110047781 A CN110047781 A CN 110047781A CN 201910195260 A CN201910195260 A CN 201910195260A CN 110047781 A CN110047781 A CN 110047781A
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 135
- 238000010438 heat treatment Methods 0.000 claims abstract description 96
- 230000007246 mechanism Effects 0.000 claims abstract description 69
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 238000013532 laser treatment Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000011282 treatment Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000035939 shock Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 6
- 239000002699 waste material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a kind of laser annealing apparatus and laser anneal methods.The laser annealing apparatus includes: the preheating chamber and processing chamber of connection；Be provided with the first heating mechanism in preheating chamber, the first heating mechanism has multiple first heating zones, the thermal radiation capabilities of multiple first heating zones by preheating chamber entrance to processing chamber entrance distribution gradient and there is ascendant trend；Laser treatment portion is provided in processing chamber, substrate to be processed is in laser treatment portion by laser annealing.Laser annealing apparatus disclosed by the invention, indoor first heating mechanism of preheating cavity can be to the default processing of substrate, prevent temperature shock from causing to damage to substrate, after substrate to be processed is heated up in preheating chamber, it enters back into processing chamber and carries out laser annealing processing, anneal duration, improving laser annealing efficiency can be reduced.
Description
Technical field
The invention belongs to field of display technology more particularly to a kind of laser annealing apparatus and laser anneal method.
Background technique
ELA (Excimer Laser Annealing, quasi-molecule laser annealing) refers to through excimer laser to amorphous silicon
It is irradiated, realizes transformation of the amorphous silicon to polysilicon.ELA technique is to prepare the display of low-temperature polysilicon film transistor at present
The mainstream technology of panel has the substrate of amorphous silicon structures using excimer laser irradiation, and being allowed to be changed at high temperature has
The substrate of polysilicon structure.
But amorphous silicon laser irradiation is made annealing treatment directly in processing chamber, since laser temperature is higher, substrate temperature
Cataclysm is spent, is easy to generate damage to substrate.
Summary of the invention
The embodiment of the invention provides a kind of laser annealing apparatus and laser anneal methods, it is intended to prevent temperature shock to base
Plate generates damage.
In a first aspect, the present invention provides a kind of laser annealing apparatus, comprising: the preheating chamber and processing chamber of connection；In advance
The first heating mechanism is provided in hot chamber, the first heating mechanism has multiple first heating zones, the heat of multiple first heating zones
Radianting capacity by preheating chamber entrance to processing chamber entrance distribution gradient and have ascendant trend；It is set in processing chamber
It is equipped with laser treatment portion, substrate to be processed is in laser treatment portion by laser annealing.
According to an aspect of the present invention, be additionally provided with constant temperature processor in processing chamber, constant temperature processor for make to
The substrate of processing is maintained at preset temperature.
According to an aspect of the present invention, the first heating mechanism includes a plurality of along the spaced first resistor of first direction
Silk；Or first heating mechanism include the first resistor silk for continuously bending and extending in a first direction, the distribution of first resistor silk is close
Degree is gradually increased by the entrance of entrance to the processing chamber of preheating chamber.
According to an aspect of the present invention, processing chamber offers first window and the second window, and first window is for making
Laser irradiation carries out laser annealing in substrate to be processed, and the second window is for filling protective gas into processing chamber；It is preferred that
, protective gas is nitrogen.
According to an aspect of the present invention, further comprise: cooling chamber is connected to processing chamber, sets in preheating chamber
Be equipped with the second heating mechanism, the second heating mechanism has multiple second heating zones, the thermal radiation capabilities of multiple second heating zones by
The outlet distribution gradient for being exported to preheating chamber of processing chamber and have downward trend.
According to an aspect of the present invention, the second heating mechanism includes a plurality of second resistance spaced in a second direction
Silk；Or second heating mechanism include continuous bending and the second resistance silk that extends to second direction, the distribution of second resistance silk is close
Degree is gradually reduced along the outlet for being exported to cooling chamber of processing chamber.
According to an aspect of the present invention, it is respectively provided between preheating chamber and processing chamber, processing chamber and cooling chamber
There is the partition that can be opened and closed.
It according to an aspect of the present invention, further comprise driving mechanism, driving mechanism is for bearing substrate and makes substrate
Processing chamber can be reached via preheating chamber reach cooling chamber again.
According to an aspect of the present invention, driving mechanism is belt gear, belt gear through preheating chamber,
Processing chamber and cooling chamber are arranged；Or driving mechanism includes first movement platform, the second mobile platform and third mobile platform,
First movement platform is arranged in preheating chamber, and the second mobile platform is arranged in processing chamber, and the setting of third mobile platform exists
In cooling chamber, wherein first movement platform and third mobile platform are wheel platform, and the second mobile platform is flat for gas suspension
Platform.
Second aspect, the present invention provide a kind of laser anneal method, comprising: to sequentially entering the to be processed of preheating chamber
Substrate heating, makes substrate to be processed be gradually heated to preset temperature from the entrance of preheating chamber to the entrance of processing chamber；It will
Substrate to be processed moves to processing chamber from preheating chamber, and substrate to be processed is made to keep preset temperature；To substrate to be processed
Laser annealing processing is carried out, with the substrate that obtains that treated.
According to an aspect of the present invention, laser annealing processing is carried out to substrate to be processed, with the base that obtains that treated
The step of plate includes: the sweep length for adjusting laser scanner, makes the sweep length of laser scanner and substrate to be processed
Equivalent width；Laser annealing processing is carried out to substrate to be processed using laser scanner adjusted, treated to obtain
Substrate；Preferably, laser anneal method further comprises: treated substrate from processing chamber is moved into cooling chamber, to according to
Secondary to carry out cooling treatment into cooling chamber's treated substrate, the substrate that makes that treated is exported to cooling from processing chamber
The outlet of chamber is gradually cooled to room temperature.
In the embodiment of the present invention, substrate to be processed is preheated by the first heating mechanism in preheating chamber, to
The substrate of processing from the entrance of preheating chamber enter preheating chamber it is mobile to the Way in of processing chamber during, each the
One heating zone can be such that substrate to be processed is gradually warmed up, and prevent temperature shock from causing to damage to substrate, and may be implemented pair
The continuous pre-add heat treatment of each substrate to be processed for sequentially entering preheating chamber, promotes heating efficiency.It will be in preheating chamber
It after the substrate heating of processing, enters back into processing chamber and carries out laser annealing processing, anneal duration, improving laser annealing can be reduced
Treatment effeciency.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will make below to required in the embodiment of the present invention
Attached drawing is briefly described, it should be apparent that, drawings described below is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of laser annealing apparatus of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the first heating mechanism of one kind of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the first heating mechanism of another kind of the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of another laser annealing apparatus of the embodiment of the present invention；
Fig. 5 is the overlooking structure diagram of another laser annealing apparatus of the embodiment of the present invention
Fig. 6 is the structural schematic diagram of the second heating mechanism of one kind of the embodiment of the present invention；
Fig. 7 is the structural schematic diagram of the second heating mechanism of another kind of the embodiment of the present invention；
Fig. 8 is the structural schematic diagram of another laser annealing apparatus of the embodiment of the present invention；
Fig. 9 is a kind of flow chart of laser anneal method of the embodiment of the present invention.
Specific embodiment
The feature and exemplary embodiment of various aspects of the invention is described more fully below.In following detailed description
In, many details are proposed, in order to provide complete understanding of the present invention.But to those skilled in the art
It will be apparent that the present invention can be implemented in the case where not needing some details in these details.Below to implementation
The description of example is used for the purpose of providing by showing example of the invention and better understanding of the invention.In attached drawing and following
Description in, at least part of known features and technology are not shown, unnecessary fuzzy to avoid causing the present invention；
Also, for clarity, may be exaggerated the size of part-structure.In addition, feature described below, structure or characteristic can be with
It is incorporated in one or more embodiments in any suitable manner.
The noun of locality of middle appearance described below is direction shown in figure, is not to the specific of the embodiment of the present invention
Structure is defined.In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " peace
Dress ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be to be connected directly, can also be indirectly connected.For the ordinary skill in the art, visual concrete condition understands above-mentioned
The concrete meaning of term in the present invention.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.Embodiment is described in detail below in conjunction with attached drawing.
Refering to Figure 1, Fig. 1 is a kind of structural schematic diagram of laser annealing apparatus of the embodiment of the present invention.This implementation
The laser annealing apparatus of example includes at least the preheating chamber 10 and processing chamber 20 of connection, as shown in Figure 1, preheating chamber 10 and work
Skill chamber 20 can be along diagram X-direction distribution.Wherein preheating chamber 10 is used to carry out the pre-heat treatment, work to substrate 40 to be processed
Skill chamber 20 is used to carry out laser annealing processing to substrate 40 to be processed.It is understood that substrate 40 to be processed is pre-
In hot chamber 10 after preheating, processing chamber 20 is reached.It is understood that the distribution mode of preheating chamber 10 and processing chamber 20
It is not limited to distribution mode shown in FIG. 1, moves to processing chamber 20 from preheating chamber 10 as long as can be realized substrate.For example,
Preheating chamber 10 can be spaced apart with processing chamber 20, can connect both ends and preheating chamber 10 and process cavity therebetween
The channel that room 20 is respectively communicated with.
The first heating mechanism 11 is provided in preheating chamber 10, the first heating mechanism 11 has multiple first heating zones 110,
The thermal radiation capability of multiple first heating zones 110 by preheating chamber 10 entrance to processing chamber 20 entrance distribution gradient and
With ascendant trend.As shown, the first heating zone 110 of the first heating mechanism 11 can be distributed in X direction.It is understood that
Be, the entrance of entrance to the processing chamber 20 of preheating chamber 10 mentioned here refer to substrate 40 from the entrance of preheating chamber 10 into
Enter in preheating chamber 10, is moved to the direction of the entrance of processing chamber 20 according to predefined paths in preheating chamber 10.For example, pre-
The entrance of hot chamber 10 can be set on the left of the diagram of processing chamber 20, entrance, that is, processing chamber 20 of processing chamber 20 and pre-
The position that hot chamber 10 is connected, then in preheating chamber 10, penetrate through from the inlet of default chamber to the inlet of processing chamber 20,
The thermal radiation capability of first heating zone 110 gradually increases.In this way, substrate 40 to be processed is in the entrance entrance by preheating chamber 10
During the interior movement to the Way in of processing chamber 20 of preheating chamber 10, each first heating zone 110 is to substrate to be processed
40 are heated, and substrate 40 to be processed can be gradually warmed up, and 40 temperature shock of substrate to be processed can be prevented to be processed
Substrate 40 cause to damage.Meanwhile multiple substrates 40 to be processed can sequentially enter in preheating chamber 10 and to processing chamber
20 directions are mobile, and the first heating mechanism of Way in 11 along entrance to the processing chamber 20 of preheating chamber 10 can be continuously to each
Substrate 40 to be processed is heated, and heating efficiency is improved.
Laser treatment portion is provided in processing chamber 20, after each substrate 40 to be processed heats up in preheating chamber 10, according to
It is secondary to enter in processing chamber 20, in laser treatment portion by laser annealing.Laser treatment portion is that laser 51 can expose to substrate 40
And to the region that substrate 40 is made annealing treatment.
In the present embodiment, substrate 40 to be processed is carried out by the first heating mechanism 11 in preheating chamber 10 pre-
Heat, substrate 40 to be processed are entering preheating chamber 10 to the movement of the Way in of processing chamber 20 from the entrance of preheating chamber 10
During, each first heating zone 110 can be such that substrate 40 to be processed is gradually warmed up, and prevent temperature shock from causing to substrate 40
Damage, and may be implemented that each continuous pre-add of substrate 40 heat treatment to be processed for sequentially entering preheating chamber 10 is promoted and added
The thermal efficiency.After substrate 40 to be processed heats up in preheating chamber 10, enters back into processing chamber 20 and carries out laser annealing processing,
Anneal duration, improving laser annealing efficiency can be reduced.
In some alternative embodiments, constant temperature processor 21 is additionally provided in processing chamber 20, constant temperature processor 21 is used
In making substrate 40 to be processed be maintained at preset temperature.The preset temperature of the present embodiment is that substrate 40 carries out laser annealing processing
Optimum temperature, in this way, can guarantee substrate to be processed after substrate 40 to be processed is from preheating chamber 10 into processing chamber 20
40 remain at preset temperature in laser treatment process, it is possible to prevente effectively from since 40 temperature of substrate drops in prior art
It is low, the problem of needing multiple laser scanning to guarantee laser annealing effect, waste laser energy.
In the present embodiment, in preheating chamber 10, the first heating mechanism 11 can make substrate 40 to be processed by room temperature liter
Temperature makes substrate 40 be maintained at the temperature value and carries out laser annealing processing to a certain temperature value later in processing chamber 20.It can be with
Understand, which is the optimum temperature value that layer to be processed carries out laser annealing processing.When the laser annealing apparatus is to use
When transforming amorphous silicon into the laser annealing apparatus of polysilicon namely substrate 40 to be processed is the substrate 40 with amorphous silicon
When, above-mentioned temperature value can be 300 DEG C~500 DEG C.Using the laser annealing apparatus of the present embodiment to the substrate with amorphous silicon
40 carry out laser annealing processing, can reduce the inhomogeneities of amorphous silicon melt temperature in laser annealing treatment process, promote knot
The uniformity of crystal grain after crystalline substance, so effectively prevent due to driving current unevenness cause display panel mura the problem of.
In the present embodiment, for constant temperature processor 21 the specific structure present invention with no restrictions, for example, can be resistance
Silk can be realized to the constant temperature of substrate 40 to be processed by adjusting the voltage at resistance wire both ends to guarantee its caloradiance
Reason.
In some alternative embodiments, the first heating mechanism 11 may include a plurality of along first direction spaced
One resistance wire 111, the first direction can be in the same direction with the direction of the entrance of the entrance of preheating chamber 10 to processing chamber 20.Such as figure
Shown in 1 and Fig. 2, Fig. 2 is the structural schematic diagram of the first heating mechanism of one kind of the embodiment of the present invention.The first direction can be figure
Show X-direction, each first resistor silk 111 can be along extending namely each first resistor silk 111 can be along diagram perpendicular to first direction
Y-direction extends, and each first resistor silk 111 forms the first heating zone 110 of the first heating mechanism 11.It can be by regulating and controlling each the
The current or voltage of one resistance wire 111 is to control the thermal radiation capability of each first resistor silk 111, to realize the first heating mechanism 11
The thermal radiation capability of each first heating zone 110 gradually increased by the Way in of entrance to the processing chamber 20 of preheating chamber 10
By force.With no restrictions for the spacing present invention between each adjacent first resistor silk 111, for example, each two first adjacent electricity
The spacing hindered between silk 111 can be identical, control the current or voltage of each first resistor silk 111 by preheating chamber 10 entrance extremely
The Way in of processing chamber 20 is gradually increased to realize the first heating mechanism 11 by the entrance of preheating chamber 10 to processing chamber
20 Way in thermal radiation capability gradually increases；Spacing between each two adjacent first resistor silks 111 can be along first
Direction is gradually reduced, then can control each first resistor silk 111 current or voltage it is identical or by preheating chamber 10 entrance extremely
The Way in of processing chamber 20 is gradually increased to realize the first heating mechanism 11 by the entrance of preheating chamber 10 to processing chamber
20 Way in thermal radiation capability gradually increases.
In other optional embodiments, the first heating mechanism 11 may include continuous bending and extend to first direction
First resistor silk 111, as shown in figure 3, Fig. 3 is the structural schematic diagram of the first heating mechanism of another kind of the embodiment of the present invention,
The distribution density of first resistor silk 111 is gradually increased by the entrance of entrance to the processing chamber 20 of preheating chamber 10, then first adds
Each first heating zone 110 of heat engine structure 11 has the resistance wire of different densities, real by adjusting the density of each first heating zone 110
Existing first heating mechanism 11 is gradually increased by the Way in thermal radiation capability of entrance to the processing chamber 20 of preheating chamber 10.
It should be noted that in above-described embodiment, for the first heating mechanism 11 first resistor silk 111 in preheating chamber
The setting position present invention in 10 with no restrictions, for example, can be set top in preheating chamber 10 and/or bottom and/or
Side wall.It, should be to guarantee heating effect it is understood that if the side wall of preheating chamber 10 is arranged in first resistor silk 111
Perpendicular to being respectively provided with the first heating mechanism 11 on the side wall of the two sides of the moving direction of substrate 40.When the first heating mechanism 11 includes
It is a plurality of along the spaced first resistor silk 111 of first direction, then each first resistor silk 111 can along the vertical direction (Z-direction)
It is extended.
It in some alternative embodiments, can be by laser scanner to the substrate 40 to be processed in processing chamber 20
Carry out laser annealing processing.For laser scanner the specific setting position present invention with no restrictions.For example, laser scanner can
To be located at outside processing chamber 20, it is set to the top of preheating chamber 10, or is vacantly set to the top of processing chamber 20.In technique
First window 22 is offered on chamber 20, the laser 51 of laser scanner can act at laser by first window 22
On the substrate 40 to be processed in reason portion.First window 22 can may be the clear area being arranged on processing chamber 20 for through-hole
Domain, as long as laser 51 can be penetrated.Laser scanner can also be located at the inside of processing chamber 20.In order in laser annealing
In journey reduce laser scanning number, reduce the waste of laser energy, by the sweep length of laser scanner be set as with wait locate
Manage the equivalent width of substrate 40.For example, substrate 40 to be processed is the G6 substrate of 185mm × 1500mm, then can be swashed using 6
The laser scanner of light pipe, the hot spot that formation length 1500mm, width are 0.6mm, by the width of the length of hot spot and substrate 40
Degree corresponds to, then the laser annealing processing of substrate 40 can be realized along the length direction single pass of substrate 40 for hot spot.
In some optional embodiments, in order to reduce the concentration of oxygen in processing chamber 20, guarantee at laser annealing
Effect to be managed, needs to fill protective gas in processing chamber 20, the processing chamber 20 of the present embodiment is also provided with the second window 23,
Second window 23 is through-hole, so that protective gas enters in processing chamber 20.The protective gas of the present embodiment can for helium,
One or more of neon, argon gas, Krypton, xenon and nitrogen, it is preferred that protective gas is nitrogen, can reduce cost.Its
In, need to guarantee that the concentration of oxygen in processing chamber 20 is less than 50PPM in laser anneal process.
In some alternative embodiments, laser annealing apparatus further includes cooling chamber 30, cooling chamber 30 and process cavity
Room 20 is connected to.Cooling chamber 30 can be distributed along the distribution arrangement of preheating chamber 10 and processing chamber 20, please refer to shown in Fig. 4,
Fig. 4 is the structural schematic diagram of another laser annealing apparatus of the embodiment of the present invention, in the present embodiment, cooling chamber 30 and preheating
Chamber 10 is located at the opposite both ends of processing chamber 20, and three chambers are extended in the same direction.Cooling chamber 30 can also be with
Preheating chamber 10 is in default angle distribution, such as the default angle can be 90 °, please refer to shown in Fig. 5, and Fig. 5 is of the invention real
Apply the overlooking structure diagram of another laser annealing apparatus of example, in the present embodiment, preheating chamber 10 and processing chamber 20 are along X
Directional spreding, cooling chamber 30 and process island chamber 20 are distributed along Y-direction.It is understood that cooling chamber 30 and process cavity
The distribution mode of room 20 is not limited to Fig. 4 and distribution mode shown in fig. 5, if can be realized substrate moved to from processing chamber 20 it is cold
But chamber 30.For example, cooling chamber 30 can be spaced apart with processing chamber 20, can connect therebetween both ends with
The channel that cooling chamber 30 and processing chamber 20 are respectively communicated with.
In following embodiment, it is illustrated by taking the structure of laser annealing apparatus shown in Fig. 4 as an example.
The second heating mechanism 31 is provided in cooling chamber 30, the second heating mechanism 31 has multiple second heating zones 310,
The thermal radiation capability of multiple second heating zones 310 by processing chamber 20 the outlet distribution gradient for being exported to cooling chamber 30 and
With downward trend.In this way, the substrate 40 for carrying out laser annealing processing enters cooling chamber 30 in the outlet by processing chamber 20
It is interior to the export direction of cooling chamber 30 it is mobile during, since each second heating zone 310 is along the moving direction of substrate 40
Thermal radiation capability gradually decreases, and substrate 40 can gradually cool down, and can prevent 40 temperature shock of substrate from impacting to substrate 40.
Meanwhile multiple substrates 40 can sequentially enter in cooling chamber 30 and to the movement of the export direction of cooling chamber 30, along process cavity
The second heating mechanism of export direction 31 for being exported to cooling chamber 30 of room 20 continuously can carry out cooling processing to each substrate 40,
Improve cooling efficiency.
In some alternative embodiments, the second heating mechanism 31 may include a plurality of spaced in a second direction
Two resistance wires 311, the second direction can be in the same direction with the direction of the outlet for being exported to cooling chamber of processing chamber 20.Such as Fig. 6
Shown, Fig. 6 is the structural schematic diagram of the second heating mechanism of one kind of the embodiment of the present invention.The second direction can be the diagram side X
It can be along extending perpendicular to second direction namely each second resistance silk 311 can be along diagram Y-direction to, each second resistance silk 311
Extend, each second resistance silk 311 forms the second heating zone 310 of the second heating mechanism 31.It can be by regulating and controlling each second electricity
The current or voltage of silk 311 is hindered to control the thermal radiation capability of each resistance wire, to realize that each the second of the second heating mechanism 31 adds
The thermal radiation capability of hot-zone 310 is gradually decreased by the export direction for being exported to cooling chamber 30 of processing chamber 20.For each phase
The spacing present invention between adjacent second resistance silk 311 with no restrictions, for example, between each two adjacent second resistance silks 311
Spacing can be identical, the current or voltage for controlling each second resistance silk 311 is exported to cooling chamber 30 by processing chamber 20
Export direction be gradually reduced with realize the second heating mechanism 31 by processing chamber 20 the exporter for being exported to cooling chamber 30
It is gradually decreased to thermal radiation capability；Spacing between each two adjacent second resistance silks 311 can gradually increase in a second direction
Greatly, then the current or voltage that can control each second resistance silk 311 is identical or be exported to cooling chamber 30 by processing chamber 20
Export direction be gradually reduced with realize the second heating mechanism 31 by processing chamber 20 the exporter for being exported to cooling chamber 30
It is gradually decreased to thermal radiation capability.
In other optional embodiments, the second heating mechanism 31 may include continuous bending and extend in a second direction
Second resistance silk 311, as shown in fig. 7, Fig. 7 is the structural schematic diagram of the second heating mechanism of another kind of the embodiment of the present invention,
The distribution density of second resistance silk 311 is gradually reduced by the export direction for being exported to cooling chamber 30 of processing chamber 20, then and
Each second heating zone 310 of two heating mechanisms 31 has the second resistance silk 311 of different densities, by adjusting each second heating zone
The density of 310 second resistance silk 311 realizes that the second heating mechanism 31 is exported to going out for cooling chamber 30 by processing chamber 20
Mouth direction thermal radiation capability gradually decreases.
It should be noted that in above-described embodiment, for the second heating mechanism 31 second resistance silk 311 in cooling chamber
The setting position present invention in 30 with no restrictions, for example, can be set top in cooling chamber 30 and/or bottom and/or
Side wall.
In some alternative embodiments, preheating chamber 10 and processing chamber 20, processing chamber 20 and cooling chamber 30 it
Between be provided with openable and closable partition 60.The setting of partition 60 can prevent the protective gas in processing chamber 20 too fast from phase
The joining place of adjacent two chambers enters in preheating chamber 10 and cooling chamber 30, is being diffused into outside chamber, is causing protective gas
Waste.
It further comprises driving mechanism that the laser of the present embodiment, which exits equipment, for bearing substrate 40 and enables substrate 40
Processing chamber 20, which is reached, via preheating chamber 10 reaches cooling chamber 30 again.The specific structure present invention of driving mechanism is not done
Limitation.
In some alternative embodiments, referring to shown in Fig. 4, driving mechanism can be belt gear 71, the belt
Transmission mechanism 71 is arranged through preheating chamber 10, processing chamber 20 and cooling chamber 30.It is by a belt gear 71
Substrate 40 can be achieved in three indoor movements of chamber, structure is simple.It is understood that the transmission speed of belt gear 71
It is adjustable, to adjust substrate 40 in three indoor movement speeds of chamber.
In other optional embodiments, referring to shown in Fig. 8, Fig. 8 is another laser annealing of the embodiment of the present invention
The structural schematic diagram of equipment, driving mechanism may include first movement platform 72, the second mobile platform 73 and third mobile platform
74.Wherein, first movement platform 72 is arranged in preheating chamber 10, such as can be set in the bottom of preheating chamber 10, second
Mobile platform 73 is arranged in processing chamber 20, such as can be set in the bottom of processing chamber 20, and third mobile platform 74 is set
It sets in cooling chamber 30, such as can be set in the bottom of cooling chamber 30.Wherein, first movement platform 72 and third are mobile
Platform 74 can be wheel platform, and the radius of idler wheel can be 1.5cm~2.5cm, to guarantee the relatively stable of the movement of substrate 40.
Second mobile platform 73 can be gas suspension platform, and gas suspension platform can guarantee the flatness of mobile accuracy and load-bearing surface,
Advantageously ensure that precision of the substrate 40 in the annealing of laser 51.Wherein, the flatness of gas suspension platform surface is less than or waits
In 50um.Three platforms can be controlled by electromagnetic motor to be transmitted.It is understood that can also be in the rank of two neighboring chamber
The structures such as manipulator can be set in the place of connecing, and substrate 40 can be moved to another chamber from a chamber by manipulator.
The present invention also provides a kind of laser anneal methods, and referring to shown in Fig. 9, Fig. 9 is that the laser of the embodiment of the present invention moves back
The laser anneal method of the flow chart of ignition method, the present embodiment includes the following steps:
Step 901, the substrate to be processed for sequentially entering preheating chamber is heated, makes substrate to be processed from preheating chamber
The entrance of entrance to processing chamber be gradually heated to preset temperature.
In the step, preset temperature is the optimum temperature that substrate 40 to be processed carries out laser annealing processing.To be processed
Substrate 40 is gradually warmed up from the Way in of entrance to the processing chamber 20 of preheating chamber 10, can prevent 40 temperature shock of substrate
Substrate 40 is caused to damage.Also, each continuous pre-add of substrate 40 heat treatment to be processed for sequentially entering preheating chamber 10, is promoted
Heating efficiency.
Step 902, substrate to be processed is moved into processing chamber from preheating chamber, substrate to be processed is made to keep default temperature
Degree.
Step 903, laser annealing processing is carried out to substrate to be processed, with the substrate that obtains that treated.
In the step, substrate 40 is maintained at progress laser annealing processing under preheating temperature, ensure that the temperature of annealing and subtracts
Lacked anneal duration, promoted the stability and uniformity of substrate laser annealing, and it is possible to prevente effectively from laser energy wave
Take.
In the present embodiment, substrate 40 to be processed is entering preheating chamber 10 to process cavity from the entrance of preheating chamber 10
During the Way in of room 20 is mobile, it is gradually heated to preset temperature, prevents temperature shock from causing to damage to substrate 40, and
And it may be implemented to promote heating efficiency to each continuous pre-add of substrate 40 heat treatment to be processed for sequentially entering preheating chamber 10.
Substrate 40 to be processed moves in processing chamber 20 from preheating chamber 10 is maintained at preset temperature, can guarantee substrate to be processed
40 carry out laser annealing processing under preset temperature, ensure that the temperature of annealing and reduce anneal duration, promote substrate 40 and swash
Photo-annealing processing stability and uniformity, and it is possible to prevente effectively from laser energy waste.
In some alternative embodiments, step 903 specifically comprises the following steps:
Step 1 adjusts the sweep length of laser scanner, makes the sweep length of laser scanner and substrate to be processed
Equivalent width.
Step 2 carries out laser annealing processing to substrate to be processed using laser scanner adjusted, to obtain everywhere
Substrate after reason.
In this way, the laser annealing processing of substrate 40 can be realized by single pass process, laser scanning time is reduced
Number, reduces the waste of laser energy.
In some alternative embodiments, laser annealing processing method can also include the steps that cooling treatment, specifically,
Treated substrate from processing chamber is moved into cooling chamber, substrate cools down to sequentially entering cooling chamber treated
Processing, the substrate that makes that treated are gradually cooled to room temperature from the outlet for being exported to cooling chamber of processing chamber.
During cooling treatment, substrate 40 can gradually cool down, and can prevent 40 temperature shock of substrate from causing to substrate 40
It influences.Meanwhile multiple substrates 40 can sequentially enter in cooling chamber 30 and to the movement of the export direction of cooling chamber 30, along work
The export direction for being exported to cooling chamber 30 of skill chamber 20 gradually cools down, and improves cooling efficiency.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in various equivalent modifications or replace
It changes, these modifications or substitutions should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with right
It is required that protection scope subject to.
Claims (10)
1. a kind of laser annealing apparatus characterized by comprising the preheating chamber and processing chamber of connection；
The first heating mechanism is provided in the preheating chamber, first heating mechanism has multiple first heating zones, multiple
The thermal radiation capability of first heating zone by the preheating chamber entrance to the processing chamber entrance distribution gradient
And there is ascendant trend；
Laser treatment portion is provided in the processing chamber, substrate to be processed is in the laser treatment portion by laser annealing.
2. laser annealing apparatus according to claim 1, which is characterized in that be additionally provided at constant temperature in the processing chamber
Device is managed, the constant temperature processor is for making the substrate to be processed be maintained at preset temperature.
3. laser annealing apparatus according to claim 1, which is characterized in that first heating mechanism includes a plurality of along
The spaced first resistor silk in one direction；Or
First heating mechanism includes continuous bending and the first resistor silk that extends to first direction, the first resistor silk
Distribution density is gradually increased by the entrance of entrance to the processing chamber of the preheating chamber.
4. laser annealing apparatus according to claim 1, which is characterized in that the processing chamber offer first window and
Second window, the first window are used to that laser irradiation to be made to carry out laser annealing, second window in the substrate to be processed
Mouth is for filling protective gas into the processing chamber；
Preferably, the protective gas is nitrogen.
5. laser annealing apparatus according to claim 1, which is characterized in that further comprise:
Cooling chamber is connected to the processing chamber, and the second heating mechanism, second heating are provided in the preheating chamber
Mechanism has multiple second heating zones, and the thermal radiation capability of multiple second heating zones is exported to institute by the processing chamber
It states the outlet distribution gradient of preheating chamber and there is downward trend.
6. laser annealing apparatus according to claim 5, which is characterized in that second heating mechanism includes a plurality of along
The spaced second resistance silk in two directions；Or
Second heating mechanism includes the continuous second resistance silk for bending and extending in a second direction, the second resistance silk
Distribution density is gradually reduced along the outlet for being exported to the cooling chamber of the processing chamber.
7. laser annealing apparatus according to claim 5, which is characterized in that it further comprise driving mechanism, the driving
Mechanism reaches institute for carrying the substrate and the substrate being enable to reach the processing chamber via the preheating chamber again
State cooling chamber.
8. laser annealing apparatus according to claim 7, which is characterized in that the driving mechanism is belt gear,
The belt gear is arranged through the preheating chamber, the processing chamber and the cooling chamber；Or
The driving mechanism includes first movement platform, the second mobile platform and third mobile platform, the first movement platform
It is arranged in the preheating chamber, second mobile platform is arranged in the processing chamber, and the third mobile platform is set
It sets in the cooling chamber, wherein the first movement platform and the third mobile platform are wheel platform, and described
Two mobile platforms are gas suspension platform.
9. a kind of laser anneal method characterized by comprising
Substrate heating to be processed to preheating chamber is sequentially entered, makes the substrate entering from the preheating chamber to be processed
The entrance of mouth to processing chamber is gradually heated to preset temperature；
The substrate to be processed is moved into the processing chamber from the preheating chamber, the substrate to be processed is made to keep pre-
If temperature；
Laser annealing processing is carried out to the substrate to be processed, with the substrate that obtains that treated.
10. laser anneal method according to claim 9, which is characterized in that described to be carried out to the substrate to be processed
Laser annealing processing includes: with the step of substrate that obtains that treated
The sweep length for adjusting laser scanner makes the sweep length of laser scanner and the width one of the substrate to be processed
It causes；
Laser annealing processing is carried out to the substrate to be processed using laser scanner adjusted, with the base that obtains that treated
Plate；
Preferably, the laser anneal method further comprises: will treated that the substrate moves to from the processing chamber is cold
But chamber, the substrate carries out cooling treatment to sequentially entering the cooling chamber treated, the base that makes that treated
Plate is gradually cooled to room temperature from the outlet for being exported to the cooling chamber of the processing chamber.
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