CN107170697A - A kind of annealing of substrates device - Google Patents
A kind of annealing of substrates device Download PDFInfo
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- CN107170697A CN107170697A CN201710286624.8A CN201710286624A CN107170697A CN 107170697 A CN107170697 A CN 107170697A CN 201710286624 A CN201710286624 A CN 201710286624A CN 107170697 A CN107170697 A CN 107170697A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
A kind of annealing of substrates device, it includes：Laser anneal device is provided with annealing chamber, the annealing chamber, substrate surface is made annealing treatment；There is the irradiation position of multiple fixations substrate, the laser anneal device that at least one described described substrate to the irradiation position is irradiated in the annealing chamber.The laser anneal device of the present invention saves floor space, and improves in same space transmission and the processing quantity of substrate；Simultaneously because transfer chamber, preheating chamber and annealing chamber, which can be set, there are multiple chambers, efficiently annealing can be achieved, laser annealing production capacity is improved.
Description
Technical field
The present invention relates to display technology field, and in particular to a kind of annealing of substrates device.
Background technology
With the development of Display Technique, active matrix organic light-emitting diode (Active-matrix organic light
Emitting diode, AMOLED) panel is used widely, and OLED has high-contrast, wide viewing angle, low-power consumption, small volume
The advantages of.Based on AMOLED panel, one kind is referred to as low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS)
Technology arise at the historic moment.At present, LTPS technology now uses the method buffer layer of chemical vapor deposition on a glass substrate；So
Deposition of amorphous silicon layers on the buffer layer, polysilicon layer is being changed into by laser annealing apparatus by amorphous silicon layer afterwards.
In the prior art, it is in the amorphous silicon layer on substrate using PRK uniform irradiation so that amorphous silicon layer
By high-temperature fusion, then recrystallize and form polysilicon layer.But due to laser annealing apparatus of the prior art, generally annealed
It is merely able to make annealing treatment one piece of substrate every time in journey, production capacity poor efficiency is low, is unfavorable for the industrialization processing of substrate.
The content of the invention
Therefore, the technical problem to be solved in the present invention is to overcome laser annealing technique processing efficiency of the prior art
The high defect of low, cost, a kind of laser anneal device of amorphous silicon membrane is provided for this.
Therefore, technical scheme is as follows：
A kind of annealing of substrates device, it includes：Laser anneal device is provided with annealing chamber, the annealing chamber, to substrate
Surface is made annealing treatment；In the annealing chamber have multiple fixations substrate irradiation position, it is described at least one to institute
State the laser anneal device that the substrate of irradiation position is irradiated.
The annealing of substrates device of the present invention, by being provided with multiple irradiation positions in annealing chamber, so in laser annealing
The same step annealing of polylith substrate in annealing chamber can be achieved under the irradiation of device, production capacity is effectively increased.
Further, the laser anneal device has multiple, and is separately positioned on corresponding with the irradiation position
On multiple locular walls.Because laser anneal device has multiple, each laser anneal device can be so controlled, safeguarded, from
And it is easy to use human users.
Further, in addition to the preheating chamber of the annealing chamber upstream is arranged on, the preheating chamber is carried out to the substrate
Preheating；Preferably, the heating temperature range of the preheating chamber is 0 DEG C to 600 DEG C.
The annealing of substrates device of the present invention, by setting preheating chamber in annealing chamber upstream, it is to avoid because substrate temperature is relatively low
Multiple laser scanning, which need to be carried out, can just transform amorphous silicon into polysilicon；The efficiency of laser annealing is improved, while reducing sharp
The access times of Optical Transmit Unit, improve the service life of LASER Light Source, reduce production cost.
Further, rotating device is additionally provided with the annealing chamber, multiple irradiation positions are arranged on the rotation
On device；Preferably, turning device is also set up on the rotating device, the turning device is overturn to the substrate.
The present invention annealing of substrates device, by being provided with rotating device, can be achieved by each substrate by rotate feeding or
Rotation takes away each irradiation position corresponding with laser anneal device.
Further, the annealing of substrates device also includes transfer chamber, and substrate supplied materials is sent to described by the transfer chamber
Preheating chamber；Preferably, turning device is provided with the transfer chamber, the turning device is overturn to the substrate；It is preferred that
Ground, the preheating chamber, the transfer chamber and the annealing chamber are provided with multiple chambers.
The annealing of substrates device of the present invention, by being provided with turning device, Huo Zhetong on the rotating device in annealing chamber
Cross and be provided with the transfer chamber of turning device in preheating chamber upstream, can be achieved to flip Horizontal to vertical substrate, due to part
Substrate area is larger, needs to take larger area if annealing operation is synchronized to the polylith substrate of horizontal positioned, by setting
Horizontal base plate is turned to vertical state by turning device, saves the floor space of device, substrate is improved waiting in isospace
Transmission and processing quantity, while by setting multiple chambers respectively in transfer chamber, preheating chamber and annealing chamber, multiple chambers are same respectively
Step upset, preheating are annealed, and effectively increase production capacity.
Further, the laser anneal device also include the inert gas heater that is correspondingly arranged with substrate surface and
The inlet and outlet passed through for the laser, the outlet are provided with laser beam irradiation unit, the inert gas heater
It is directed at the substrate surface.
Further, the laser anneal device also includes annealing regulation system, the annealing regulation system control irradiation
The laser energy of non-crystalline silicon on to the substrate；Preferably, the annealing regulation system includes optical system and control device,
The control device is connected with the optical system and the laser beam irradiation unit respectively, and the optical system detection analysis is described
The annealed condition of substrate surface, control device laser according to the detection and analysis output control from the optical system
Illumination unit works, and the control device controls the laser beam irradiation unit to adjust the laser energy for being irradiated to the substrate surface
Amount.
Further, the optical system includes detection means and DAPAF, the detection means detection
The data of the annealed condition of the substrate surface, the DAPAF and the detection means and the control device
Communicate to connect and analyze the data of the annealed condition.
The laser anneal device of the present invention, is additionally provided with the annealing regulation system including optical system and control device, leads to
The annealed condition on optical system detection analytic substrate surface is crossed, control device is according to detection and analysis output control laser beam irradiation unit
Regulation is irradiated to the laser energy of substrate surface, is achieved in uniform conversion of the amorphous silicon layer to polysilicon layer.
Further, filter is additionally provided with the exit of the inert gas heater, the filter is at least
The laser hole passed through including control laser；Preferably, the laser anneal device also includes electrolysis unit, the electrolysis unit electricity
From the inert gas, the filter also includes the ion hole that the inert gas ion after control ionization passes through；Preferably, institute
The middle part that laser hole is arranged on the filter is stated, the ion hole is arranged on the periphery of the laser hole；Preferably, it is described to swash
Unthreaded hole is the strip through hole set along in the middle part of filter, and the ion hole is uniformly arranged on the strip through hole on the filter
Both sides.
Further, it is additionally provided with heater block on the filter, the heater block is to the substrate and described lazy
Property gas carry out heat radiation.
The laser anneal device of the present invention, is additionally provided with electrolysis unit and is electrolysed inert gas to obtain inert gas ion,
And by being provided with the filter of laser hole in exit, laser hole can pass through transmitting laser, thus control amorphous silicon layer
Converted to polysilicon layer；The ion hole that control inert gas ion passes through is additionally provided with filter simultaneously, by setting ion
Hole control inert gas ion uniformly reaches substrate surface, thus can improve the electron mobility of semiconductor layer of substrate surface simultaneously
Reduce the threshold voltage of semiconductor layer, reduce switching current, reach the effect of high-quality crystallization.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The accompanying drawing used required in embodiment or description of the prior art is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
The laser annealing schematic flow sheet that Fig. 1 is provided in the first embodiment for the present invention；
Fig. 2 is the laser anneal device structural representation shown in Fig. 1 in annealing chamber；
Fig. 3 is the turning device structural representation in the laser anneal device shown in Fig. 2；
Fig. 4 is the laser annealing schematic flow sheet that provides in another embodiment of the invention；And
Fig. 5 is the structural representation of the filter shown in Fig. 3.
Description of reference numerals：
1- substrates；2- manipulators；3- transfer chambers；4- preheating chambers；5- annealing chamber；6- laser anneal devices；7- microscope carriers；8- swashs
Light；9- filters；10- inert gas heaters；11- AC powers；12- rotating devices；13- laser beam irradiation units；14- is turned over
Rotary device；15- irradiation positions；16- inert gas accommodating chambers；17- imports；18- is exported；19- rotating basis；20- laser holes；
21- ions hole；22- heater blocks；23- detection means；24- DAPAFs；25- control devices.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Be easy to the description present invention and simplify description, rather than indicate or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that indicating or implying relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It can just be combined with each other into conflict.
Embodiment 1
It is as shown in Figure 1 a kind of annealing of substrates device of the present invention, it mainly includes：Preheating chamber 4 and annealing chamber 5.Preheating
Room 4 is arranged on the upstream of annealing chamber 5, and substrate 1 enters preheating chamber 4 by manipulator 2.Having heaters is set in preheating chamber 4, passed through
Heater carries out the pre-heat treatment to substrate 1, and the wherein heating temperature range in preheating chamber 4 is 0 DEG C to 600 DEG C.After preheating is finished,
Substrate 1 is sent into annealing chamber 5 by manipulator 2 to be made annealing treatment.
Laser anneal device 6 and rotating device 12, wherein laser anneal device are provided with annealing chamber 5 in the present embodiment
6 are used to make annealing treatment the surface of substrate 1.As shown in figure 3, being provided with rotating device 12 in the present embodiment multiple solid
Determine the irradiation position 15 of installation base plate 1.As shown in Fig. 2 the laser anneal device 6 of the present embodiment includes inert gas heater
10th, inert gas accommodating chamber 16, laser beam irradiation unit 13, annealing regulation system and the exchange powered for laser anneal device 6
Power supply 11.Laser anneal device 6 is provided with multiple, and it is separately mounted on multiple locular walls of annealing chamber 5, for respectively to setting
Multiple substrates 1 on irradiation position 15 are irradiated, and moving back to substrate 1 is realized on the surface for irradiating substrate 1 by laser scanning
Fire processing, and finally realize the amorphous silicon layer on the surface of substrate 1 to the transformation of polysilicon layer.Wherein on inert gas heater 10
Import 17 and outlet 18 that the laser launched for laser beam irradiation unit 13 is passed through are provided with, its middle outlet 18 is directed at the table of substrate 1
Face.
When laser anneal device 6 works, inert gas heater 10 is to the indifferent gas in inert gas accommodating chamber 16
Body is heated, and the inert gas after heating can be preheated by the surface of substrate 1 after filter 9, thus can be reduced and be moved back
Laser beam irradiation unit 13 improves annealing efficiency to the heat time on the surface of substrate 1 during fire, extension laser beam irradiation unit 13
Service life.After annealing operation is started, the surface of substrate 1 is irradiated by laser beam irradiation unit 13 first so that the table of substrate 1
It is higher than the temperature in the region that gas irradiates without laser on face with exporting the temperature in 18 corresponding regions, is consequently formed as in Fig. 2
The thermograde in direction shown in arrow A, the formation of thermograde is more beneficial for being formed the polysilicon of large scale crystal grain；Then pass through
Move horizontally laser anneal device so that the laser 8 that laser beam irradiation unit 13 is launched is through import 17, outlet 18 and filters
Laser scanning is carried out to the surface of substrate 1 after laser hole 20 on plate 9, thus make the surface of substrate 1 amorphous silicon layer be converted into it is many
Crystal silicon layer.
Annealing regulation system is additionally provided with the present embodiment, wherein annealing regulation system controls the annealing of laser anneal device
Working condition is so that it is guaranteed that the crystal effect of substrate 1.Annealing regulation system includes optical system, filter 9 and control device 25,
And optical system includes detection means 23 and DAPAF 24.As shown in Fig. 2 filter 9 is arranged on indifferent gas
At the outlet 18 of body heater 10.DAPAF 24 is communicated to connect with detection means 23 and control device 25, control
Device 25 processed and detection means 23 are communicated to connect with laser beam irradiation unit 13 and filter 9 respectively.Control device 25 is according to detection
The work for the output control laser beam irradiation unit 13 that device 23 and DAPAF 24 are tested and analyzed.Detection means 23 is examined
The annealed condition on the surface of substrate 1 is surveyed, specifically, is made in the present embodiment using ellipsometer as detection means using single-chip microcomputer
For DAPAF and control device, ellipsometer is connected with single chip communication；Wherein ellipsometer is by detecting the table of substrate 1
The crystallization thickness of face current region, and detection data are sent to the single-chip microcomputer with analysis program；Single-chip microcomputer Treatment Analysis is examined
The data measured, and the result for being detected and being analyzed.Single-chip microcomputer further according to detection and analysis result, by controlling laser to irradiate
The laser energy that 13 pairs of unit is irradiated on the surface of substrate 1 is adjusted, and is achieved in amorphous silicon layer to the uniform of polysilicon layer
Conversion.It should be understood that ellipsometer, the single-chip microcomputer with analysis program are all techniques knowns, repeat no more here.
Electrolysis unit is additionally provided with laser anneal device 6 wherein in the present embodiment, inertia is dissociated by electrolysis unit
Gas can obtain inert gas ion, and such as inert gas Ar is obtained energy and excited outer-shell electron by external voltage is changed into Ar
+ ionic condition.Include the laser hole 20 that the laser of the control transmitting of laser beam irradiation unit 13 passes through, and control on filter 9
The ion hole 21 that inert gas ion passes through.The structure of filter 9 is as shown in figure 5, the middle part of filter 9 is provided with strip laser
Hole 20, ion hole 21 has been evenly arranged in the both sides of laser hole 20, and its intermediate ion hole 21 could be arranged to as depicted square
Hole is it can also be provided that circular port.The ion for the inert gas being electrolysed out by high-pressure electrolysis device, to substrate 1 under electric field action
Direction orientation (direction shown in arrow B i.e. along along Fig. 2) moves through the uniform table for flowing into substrate 1 in ion hole 21 of filter 9
Face, is surface-treated to substrate substrate film layer, and the TFT characteristics of the semiconductor layer of substrate surface can be improved by above-mentioned processing,
Reach the effect of high-quality crystallization.
As shown in figure 3, being additionally provided with turning device 14 on rotating device 12 in the present embodiment.Rotating device 12 includes rotation
Turn to be provided with microscope carrier 7 on pedestal 19 and the turning device 14 being arranged on rotating basis 19, turning device 14, for example, microscope carrier 7 is logical
Turning device 14 is crossed to be connected on rotating basis 19.For example it is provided with microscope carrier 7 by way of negative pressure of vacuum is adsorbed
Substrate 1.Turning device 14 overturns substrate 1 by overturning microscope carrier 7, and substrate 1 is overturn to vertical state by horizontality.Turn over
One kind in the transmission joints such as gear, sprocket wheel, belt wheel may be selected in rotary device.Because the area of substrate 1 is larger, in actual behaviour
Need larger floor space in work, therefore operations area can be saved after substrate 1 is overturn to improve production capacity.
As alternative embodiment, transfer chamber 3 also can be set in annealing of substrates device as shown in Figure 4.Transfer chamber 3 is set
In the upstream of preheating chamber 4 and in the downstream of manipulator 2, substrate supplied materials is sent in transfer chamber 3.In transfer chamber 3
Settable turning device, is so overturn substrate 1 in transfer chamber 3 by turning device.
And in order to improve transfer chamber 3, preheating chamber 4, annealing chamber 5 can be disposed as in production capacity, above-described embodiment it is multiple
Chamber.Multiple chambers of transfer chamber 3 synchronize upset substrate 1, multiple chambers of preheating chamber synchronize pre- hot substrate 1 and
Multiple chambers of annealing chamber synchronize annealing substrate 1.The cooperating of above-mentioned multiple chambers helps further to improve efficiency
And production capacity.
Laser anneal device its main working process of the present invention is：
(1) conveying substrate, by conveying device to preheating chamber 4 convey polylith substrate supplied materials, supplied materials enter preheating chamber 4 after by
Heater carries out the pre-heat treatment to substrate 1.
(2) the polylith substrate 1 after preheating enters annealing chamber 5 by preheating chamber 4., will by the rotating device 12 in annealing chamber 5
The substrate 1 on each irradiation position 15 being arranged on rotating device 12 rotates to and is arranged on the laser annealing on each locular wall
Multiple surfaces of substrate 1 are made annealing treatment by the corresponding position of device 6 simultaneously using multiple laser anneal devices 6.
Wherein annealing process mainly includes：Preheating treatment procedure and laser scanning process.
In preheating treatment procedure, the inert gas heater 10 in laser anneal device 6 is directed to the table of substrate 1
Face.First, surface relative with the outlet 18 of inert gas heater on substrate 1 is swashed by laser beam irradiation unit 13
Light irradiation so that the temperature through laser-irradiated domain is higher than the temperature in other regions on amorphous thin Film layers, is consequently formed as attached
Thermograde in Fig. 2 shown in arrow A, the formation of thermograde advantageously forms large scale crystal grain.Next, as shown in Figure 5
At least side is additionally provided with heater block 22 on filter 9, and heater block 22 can use resistance wire.The heat radiation of heater block 22
Both the amorphous silicon film layer of substrate 1 can be preheated or the inert gas in inert gas accommodating chamber 16 was heated.Together
When, inert gas heater 10 is heated to the inert gas in inert gas accommodating chamber 16, the inert gas after heating
The surface of substrate 1 can be flowed to by laser hole 20 and ion hole 21, the pre-heat treatment thus is realized to the amorphous silicon layer of substrate 1.Example
The conversion to polysilicon such as can be realized when the surface temperature of amorphous silicon film layer needs to reach 1000 DEG C, and passes through hot inert gas
And amorphous silicon layer can be can reach 600 DEG C -800 DEG C by the preheating of heater block 22 before laser scanning operation is carried out.Thus,
The time of post laser scan operation can be shortened, annealing efficiency is improved, reduce the irradiation time of laser emission element and improve and swash
The service life of Optical Transmit Unit.
Laser scanning process is using the movement irradiation substrate surface of laser beam irradiation unit 13.Laser scanning process also includes：Inspection
Survey step, Data Management Analysis step and regulating step.Pass through being recrystallized by amorphous silicon layer to the surface of substrate 1 of detection means 23
The polysilicon layer of formation is detected that the detection data of acquisition are fed back to after the Treatment Analysis of DAPAF 24 in real time
Control device 25.Control device 25 adjusts laser beam emitting device according to the Treatment Analysis result from DAPAF 24
The laser of substrate surface is irradiated in 6, uniform conversion of the amorphous silicon layer to polysilicon layer is thus controlled.For example it is current when detecting
The average thickness of the amorphous silicon layer in region is 50nm, then the operating power for controlling laser beam irradiation unit 13 is 2000W；Such as detect
When the average thickness of the amorphous silicon layer of current region is 51nm, then the operating power for controlling laser beam irradiation unit 13 is 2010W；Such as
When the average thickness for detecting the amorphous silicon layer of current region is 49nm, then the operating power for controlling laser beam irradiation unit 13 is
1990W。
Laser scanning process also includes ionized inert gas process simultaneously, passes through the electrolysis unit pair set in annealing chamber 5
Inert gas is electrolysed, the surface that the inert gas ion being electrolysed out passes through arrival substrate 1 after filter 9.It is lazy by being electrolysed
Property gas obtain ion pair substrate substrate film layer be surface-treated, the electron transfer of the semiconductor layer of substrate surface can be improved
Rate, improves the resolution ratio that electron mobility is favorably improved screen；And the threshold voltage of semiconductor layer is reduced, reduce threshold voltage
Help to reduce the loss of energy；Switching current threshold value can also be reduced simultaneously, switching current threshold value, which reduces, helps speed up screen
The response time of brightness, the effect of optimization substrate surface crystallization is thus reached.
Also the upstream of preheating chamber 4 can be provided with transfer chamber 3.When being provided with transfer chamber 3, substrate 1 is entering transfer chamber 3
When substrate 1 is overturn, by substrate 1 by flip horizontal to vertical.When being not provided with transfer chamber 3, substrate 1 enters annealing
Substrate 1 is overturn during room 5, by substrate 1 by flip horizontal to vertically.
The laser anneal device of the present embodiment is newly-increased transfer chamber, by changing substrate in transfer chamber or annealing chamber
Mode of movement, by substrate by flip horizontal to vertical state, saves plant area space, and improves in same space substrate
Transmission and processing quantity.Further, since transfer chamber, preheating chamber and annealing chamber, which can be set, multiple chambers, it can be achieved efficient
Annealing, improves laser annealing production capacity.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of annealing of substrates device, it includes：
Laser anneal device is provided with annealing chamber, the annealing chamber, substrate surface is made annealing treatment；
It is characterized in that：
There is the irradiation position of multiple fixations substrate, at least one described base to the irradiation position in the annealing chamber
The laser anneal device that plate is irradiated.
2. annealing of substrates device according to claim 1, it is characterised in that：The laser anneal device has multiple, and
It is separately positioned on multiple locular walls corresponding with the irradiation position.
3. annealing of substrates device according to claim 1 or 2, it is characterised in that：Also include being arranged in the annealing chamber
The preheating chamber of trip, the preheating chamber is preheated to the substrate；Preferably, the heating temperature range of the preheating chamber is 0
DEG C to 600 DEG C.
4. the annealing of substrates device according to any one in claim 1-3, it is characterised in that：Also set in the annealing chamber
Rotating device is equipped with, multiple irradiation positions are arranged on the rotating device；Preferably, also set on the rotating device
Turning device is put, the turning device is overturn to the substrate.
5. the annealing of substrates device according to claim 3 or 4, it is characterised in that：The annealing of substrates device also includes passing
Room is sent, substrate supplied materials is sent to the preheating chamber by the transfer chamber；Preferably, turning device is provided with the transfer chamber,
The turning device is overturn to the substrate；It is highly preferred that the preheating chamber, the transfer chamber and the annealing chamber are all provided with
Multiple chambers are equipped with, turning device is provided with the transfer chamber and/or multiple chambers of the annealing chamber.
6. the annealing of substrates device according to any one in claim 1-5, it is characterised in that：The laser anneal device
Also include the inert gas heater and laser beam irradiation unit being correspondingly arranged with substrate surface, the inert gas heater
On be provided with the inlet and outlet passed through for the laser, the outlet is directed at the substrate surface.
7. the annealing of substrates device according to any one in claim 1-6, it is characterised in that：The laser anneal device
Also include annealing regulation system, the annealing regulation system control is irradiated to the laser energy of the non-crystalline silicon on the substrate；It is excellent
Selection of land, the annealing regulation system include optical system and control device, the control device respectively with the optical system and
The laser beam irradiation unit connection, the optical system detection analyzes the annealed condition of the substrate surface, the control device
Laser beam irradiation unit works according to the detection and analysis output control from the optical system, and the control device controls institute
State the laser energy that laser beam irradiation unit regulation is irradiated to the substrate surface.
8. annealing of substrates device according to claim 7, it is characterised in that：The optical system includes detection means sum
According to Treatment Analysis device, the detection means detects the data of the annealed condition of the substrate surface, the Data Management Analysis
Device communicates to connect with the detection means and the control device and analyzes the data of the annealed condition.
9. annealing of substrates device according to claim 6, it is characterised in that：Described in the inert gas heater
Exit is additionally provided with filter, and the filter at least includes the laser hole that control laser passes through；Preferably, the laser is moved back
Fiery device also includes electrolysis unit, and the electrolysis unit ionizes the inert gas, and the filter is also included after control ionization
The ion hole that passes through of inert gas ion；Preferably, the laser hole is arranged on the middle part of the filter, the ion hole
It is arranged on the periphery of the laser hole；Preferably, the laser hole is the strip through hole set along in the middle part of filter, the ion
Hole is uniformly arranged on the both sides of the strip through hole on the filter.
10. annealing of substrates device according to claim 9, it is characterised in that：Heating part is additionally provided with the filter
Part, the heater block carries out heat radiation to the substrate and the inert gas.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107742612A (en) * | 2017-09-27 | 2018-02-27 | 德淮半导体有限公司 | Wafer annealing treatment equipment and annealing method |
| CN109935532A (en) * | 2017-12-15 | 2019-06-25 | 上海微电子装备（集团）股份有限公司 | Laser heat treatment equipment and processing method |
| CN110047781A (en) * | 2019-03-14 | 2019-07-23 | 云谷（固安）科技有限公司 | Laser annealing apparatus and laser anneal method |
| CN110238566A (en) * | 2019-06-04 | 2019-09-17 | 立府精密机械有限公司 | A kind of polycrystalline diamond compact bit hot weld production line |
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