CN110045303B

CN110045303B - Magnetic field sensing module

Info

Publication number: CN110045303B
Application number: CN201910039100.8A
Authority: CN
Inventors: 袁辅德; 高培钧; 赖孟煌
Original assignee: Isentek Inc
Current assignee: Isentek Inc
Priority date: 2015-05-08
Filing date: 2016-04-11
Publication date: 2021-12-14
Anticipated expiration: 2036-04-11
Also published as: CN110045303A

Abstract

The invention provides a magnetic field sensing device and a magnetic field sensing module. The magnetic field sensing device comprises a substrate, a first magnetic field sensing unit, a second magnetic field sensing unit, a third magnetic field sensing unit and a switching circuit. The substrate has a surface, and a first inclined surface and a second inclined surface inclined in different directions relative to the surface. The first magnetic field sensing unit comprises a plurality of magneto-resistive sensors connected in a Wheatstone full bridge and arranged on the surface. The second magnetic field sensing unit comprises a plurality of magnetic resistance sensors which are connected into a Wheatstone half bridge and are configured on the first inclined plane. The third magnetic field sensing unit comprises a plurality of magneto-resistive sensors which are connected into a Wheatstone half bridge and are configured on the second inclined plane. The switching circuit is electrically connected with the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided. The invention has a simplified structure and a smaller volume.

Description

Magnetic field sensing module

The present application is a divisional application entitled "magnetic field sensing device and magnetic field sensing module" filed 2016, 04, 11, of the original application No. 201610220380.9.

Technical Field

The invention relates to a magnetic field sensing device and a magnetic field sensing module.

Background

With the popularization of portable electronic devices, the technology of electronic compass capable of sensing the direction of the geomagnetism has been gaining attention. When the electronic compass is applied to a portable electronic device (such as a smart phone) with a small size, it is desirable that the electronic compass can achieve three-axis sensing in addition to meeting the small size requirement, because the user may hold the mobile phone obliquely when holding the mobile phone with a hand, and various holding angles may be generated.

One known technique uses a composite sensing element to achieve three-axis sensing, and specifically, uses two perpendicular Giant Magnetoresistive (GMR) multilayer structures (or Tunneling Magnetoresistive (TMR) multilayer structures) and one Hall element (Hall element) to achieve three-axis sensing. However, since the sensing sensitivity of the hall element is different from that of the giant magnetoresistance multilayer film structure (or tunneling magnetoresistance multilayer film structure), the accuracy in one axis is different from that in the other two axes. Therefore, when a user rotates the portable electronic device to different angles, the sensitivity of sensing the same magnetic field is different, and the user may be confused.

In the prior art, to achieve multi-axis magnetic field sensing, more than two processes are usually adopted, that is, more than two wafers are used to manufacture the multi-axis magnetic field sensing module, which complicates the process and makes it difficult to reduce the manufacturing cost. In addition, this also makes it difficult to further reduce the size of the magnetic field sensing device.

Disclosure of Invention

The invention provides a magnetic field sensing device which has a simplified structure and can have a smaller volume.

The invention provides a magnetic field sensing module which has a simplified structure and can have a smaller volume.

An embodiment of the invention provides a magnetic field sensing device, which includes a substrate, a first magnetic field sensing unit, a second magnetic field sensing unit, a third magnetic field sensing unit, and a switching circuit. The substrate has a surface, and a first inclined surface and a second inclined surface inclined in different directions relative to the surface. The first magnetic field sensing unit includes a plurality of magneto-resistive sensors connected in a Wheatstone full bridge (Wheatstone full bridge) and disposed on the surface, and is configured to sense a magnetic field component in a first direction. The second magnetic field sensing unit includes a plurality of magneto-resistive sensors connected in a Wheatstone half bridge (Wheatstone half bridge) and disposed on the first slope. The third magnetic field sensing unit comprises a plurality of magneto-resistive sensors which are connected into a Wheatstone half bridge and are configured on the second inclined plane. The switching circuit is electrically connected to the second magnetic field sensing unit and the third magnetic field sensing unit and is used for switching the second magnetic field sensing unit and the third magnetic field sensing unit to two different Wheatstone full bridges. The two different Wheatstone full bridges are used for sensing the magnetic field component in the second direction and the magnetic field component in the third direction respectively.

In an embodiment of the invention, the magnetoresistive sensors of the first magnetic field sensing unit, the second magnetic field sensing unit and the third magnetic field sensing unit are anisotropic magnetoresistive sensors (AMR sensors).

In an embodiment of the present invention, the first direction, the second direction and the third direction are substantially perpendicular to each other.

In an embodiment of the invention, at least two of the first direction, the second direction and the third direction are not perpendicular to each other.

In an embodiment of the invention, the sensing axes of the magnetic resistance sensors of the second magnetic field sensing unit are substantially parallel to the inclined extension direction of the first inclined plane, and the sensing axes of the magnetic resistance sensors of the third magnetic field sensing unit are substantially parallel to the inclined extension direction of the second inclined plane.

In an embodiment of the invention, a sensing axis of the magnetoresistive sensors of the first magnetic field sensing unit is substantially perpendicular to an inclined extending direction of the first inclined plane and perpendicular to an inclined extending direction of the second inclined plane.

In an embodiment of the invention, the magnetic field sensing apparatus further includes a first magnetization direction setting component and a second magnetization direction setting component. The first magnetization direction setting assembly is disposed beside the first magnetic field sensing unit and is used for setting the magnetization directions of the magnetoresistive sensors of the first magnetic field sensing unit. The second magnetization direction setting assembly is disposed beside the second magnetic field sensing unit and the third magnetic field sensing unit, and is used for setting the magnetization directions of the magnetoresistive sensors of the second magnetic field sensing unit and the third magnetic field sensing unit.

An embodiment of the invention provides a magnetic field sensing module, which includes a magnetic field sensing unit and a magnetization direction setting assembly. The magnetic field sensing unit comprises a plurality of magnetic resistance sensors connected into a Wheatstone bridge and is used for sensing a magnetic field component in one direction. The magnetization direction setting assembly is disposed beside the magnetic field sensing unit and is used for setting the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit. The magnetization direction setting assembly comprises a first spiral conductive unit, a second spiral conductive unit and a third spiral conductive unit. The second spiral conductive unit is electrically connected between the first spiral conductive unit and the third spiral conductive unit, and the spiral extending direction of the second spiral conductive unit is different from the spiral extending direction of the first spiral conductive unit and different from the spiral extending direction of the third spiral conductive unit.

In an embodiment of the present invention, when the current flows through the first spiral-shaped conductive element, the second spiral-shaped conductive element and the third spiral-shaped conductive element sequentially, the current directly above or below the magnetoresistive sensors of one half-bridge of the wheatstone bridge flows to a first direction, and the current directly above or below the magnetoresistive sensors of the other half-bridge of the wheatstone bridge flows to a second direction, wherein the first direction is opposite to the second direction.

An embodiment of the invention provides a magnetic field sensing module, which includes a magnetic field sensing unit and a magnetization direction setting assembly. The magnetic field sensing unit comprises a plurality of magnetic resistance sensors connected into a Wheatstone bridge and is used for sensing a magnetic field component in one direction. The magnetization direction setting assembly is disposed beside the magnetic field sensing unit and is used for setting the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit. The magnetization direction setting assembly comprises a plurality of first conductive segments, a plurality of second conductive segments, a plurality of first conductive through holes and a plurality of second conductive through holes. The first conductive segments are disposed on one sides of the upper side and the lower side of the magnetic field sensing unit, and the second conductive segments are disposed on the other sides of the upper side and the lower side of the magnetic field sensing unit. The first conductive through holes connect part of the first conductive segments and part of the second conductive segments into a first spiral conductive unit, and the second conductive through holes connect the other part of the first conductive segments and the other part of the second conductive segments into a second spiral conductive unit, wherein the spiral extending direction of the first spiral conductive unit is different from the spiral extending direction of the second spiral conductive unit.

In an embodiment of the present invention, one of the first conductive segments is a U-shaped conductive segment, a portion of the U-shaped conductive segment belongs to the first spiral conductive unit, and another portion of the U-shaped conductive segment belongs to the second spiral conductive unit.

In one embodiment of the present invention, the first conductive segments partially overlap the second conductive segments.

In the magnetic field sensing device according to the embodiment of the invention, the second magnetic field sensing unit and the third magnetic field sensing unit can be switched into two different wheatstone full bridges through the circuit to sense the magnetic field components in the second direction and the third direction, respectively, so that the magnetic field sensing device can sense the magnetic field components in the three directions by using fewer magnetoresistive sensors. Therefore, the structure of the magnetic field sensing device can be simplified, and the volume of the magnetic field sensing device can be reduced. In the magnetic field sensing module according to the embodiment of the present invention, since the spiral extending direction of the second spiral-shaped conductive unit is different from the spiral extending direction of the first spiral-shaped conductive unit and different from the spiral extending direction of the third spiral-shaped conductive unit, the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit can be effectively set by using three simple spiral conductive units, so that the magnetic field sensing module according to the embodiment of the present invention has a simple structure and a small volume. In the magnetic field sensing module according to the embodiment of the invention, since the spiral extending direction of the first spiral-shaped conductive unit is different from the spiral extending direction of the second spiral-shaped conductive unit, the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit can be effectively set by using the plurality of simple first conductive segments, the plurality of second conductive segments and the conductive through hole. Therefore, the magnetic field sensing module of the embodiment of the invention has a simple structure and can be small in size.

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A is a schematic perspective view of a magnetic field sensing device according to an embodiment of the invention;

FIG. 1B is a schematic cross-sectional view of the magnetic field sensing device of FIG. 1A;

FIG. 1C is an exploded view of the magnetic field sensing module of FIG. 1A;

FIG. 2A is an equivalent circuit diagram of the second magnetic field sensing unit and the third magnetic field sensing unit in FIG. 1A when sensing the y-direction magnetic field component;

FIG. 2B is an equivalent circuit diagram of the second magnetic field sensing unit and the third magnetic field sensing unit of FIG. 1A when sensing the z-direction magnetic field component;

FIG. 3 is an exploded view of a magnetic field sensing module according to another embodiment of the present invention;

FIG. 4 is an exploded view of a magnetic field sensing module according to yet another embodiment of the present invention;

FIG. 5 is an exploded view of a magnetic field sensing module according to yet another embodiment of the present invention.

Reference numerals:

100: magnetic field sensing device

110: substrate

112: surface of

114: first inclined plane

116: second inclined plane

120: first magnetic field sensing unit

122. 122a, 122b, 122c, 122d, 132a, 132b, 142a, 142 b: magnetoresistive sensor

123: anisotropic magnetoresistance

125: ferromagnetic film

127: short-circuit bar

130: second magnetic field sensing unit

140: third magnetic field sensing unit

150: switching circuit

200. 200a, 200b, 200 c: first magnetization direction setting assembly

210. 250a, 250b, 250 c: first spiral conductive unit

210a, 211 to 213, 211b to 214b, 211c to 215 c: first conductive segment

2121. 2131c, 2221 b: the first part

2122. 2132c, 2222 b: the second part

220. 260a, 260b, 260 c: second spiral conductive unit

220a, 221, 222, 221b to 223b, 221c to 224 c: second conductive segment

230: third spiral conductive element

230a, 231, 232, 231b to 233b, 231c to 234 c: a first conductive through hole

240. 250, 260: conductive segment

240a, 241, 242, 241b to 243b, 241c to 244 c: second conductive through hole

270a, 280 a: contact point

300: second magnetization direction setting assembly

400. 400a, 400b, 400c, 500: magnetic field sensing module

A1, a2, A3: sensing shaft

C1, C2, C3, C4, C5, C6: endpoint

D1: direction of inclined extension

D2: direction of inclined extension

E1, E2, E2, E4, E5, E6: current flow direction

P1, P2, P3, P4, P5, P6, P7, P8, Q1, Q2, Q3, Q4: endpoint

Detailed Description

Fig. 1A is a perspective view of a magnetic field sensing device according to an embodiment of the invention, fig. 1B is a cross-sectional view of the magnetic field sensing device of fig. 1A, and fig. 1C is an exploded view of the magnetic field sensing module of fig. 1A, wherein for convenience of illustration, the magnetization direction setting assembly of fig. 1B is omitted in fig. 1A. Referring to fig. 1A to fig. 1C, the magnetic field sensing apparatus 100 of the present embodiment includes a substrate 110, a first magnetic field sensing unit 120, a second magnetic field sensing unit 130, a third magnetic field sensing unit 140, and a switching circuit 150 (as shown in fig. 1B). The substrate 110 has a surface 112 and a first inclined surface 114 and a second inclined surface 116 inclined in different directions relative to the surface 112. In the embodiment, the substrate 110 is, for example, a blank silicon substrate (blank silicon), a glass substrate, or a silicon substrate with a very large scale integrated circuit (VLSI) or a large scale integrated circuit (LSI).

The first magnetic field sensing unit 120 includes a plurality of magneto-resistive sensors 122 connected in a Wheatstone full bridge and disposed on the surface 112 for sensing a magnetic field component in a first direction (e.g., x direction). The second magnetic field sensing unit 130 includes a plurality of magneto-resistive sensors 132 connected as a Wheatstone half bridge and disposed on the first inclined plane 114. The third magnetic field sensing unit 140 includes a plurality of magneto-resistive sensors 142 connected as a Wheatstone half bridge and disposed on the second ramp 116. The switching circuit 150 is electrically connected to the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140, and is used for switching the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 to two different wheatstone full bridges. Two different wheatstone full bridges are used to sense a magnetic field component in a second direction (e.g., y direction) and a magnetic field component in a third direction (e.g., z direction), respectively. In the present embodiment, the x-direction, the y-direction, and the z-direction are perpendicular to each other. In other words, in the present embodiment, the first direction, the second direction and the third direction are substantially perpendicular to each other. However, in other embodiments, at least two of the first direction, the second direction, and the third direction are not perpendicular to each other, and the first direction, the second direction, and the third direction are different from each other. In the present embodiment, the x-direction and the y-direction are substantially parallel to the surface 112 of the substrate 110, and the z-direction is perpendicular to the surface 112 of the substrate 110.

In the present embodiment, the

magnetoresistive sensors

122, 132 and 142 of the first magnetic field sensing unit 120, the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 are anisotropic magnetoresistive sensors (AMR sensors). However, in other embodiments, the

magnetoresistive sensors

122, 132 and 142 may be giant magnetoresistive sensors (GMR sensors), tunneling magnetoresistive sensors (TMR sensors), flux gates (flux gates) or magneto-impedance sensors (magneto-impedance sensors).

In the present embodiment, the sensing axis a1 of the magnetoresistive sensors 122 of the first magnetic field sensing unit 120 is substantially perpendicular to the inclined extending direction D1 of the first inclined plane 114 and perpendicular to the inclined extending direction D2 of the second inclined plane 116, as shown in fig. 1A and fig. 1C. Specifically, in the present embodiment, each magnetoresistive sensor 122 may include a plurality of anisotropic magnetoresistors (anistropic magnetoresistors) 123 connected in series, an extending direction of each anisotropic magnetoresistive resistor 123 is substantially parallel to the y direction, and a short axis of each anisotropic magnetoresistive resistor 123 is substantially parallel to the x direction, and the short axis is the sensing axis a1 of the magnetoresistive sensor 122.

In the present embodiment, the magnetization directions of the

magnetoresistive sensors

122a and 122b are, for example, oriented in the-y direction, and the magnetization directions of the

magnetoresistive sensors

122c and 122d are, for example, oriented in the + y direction. In addition, each of the anisotropic magnetoresistance 123 has a barber pole (barber pole) -like structure, that is, a surface thereof is provided with a plurality of short-circuiting bars (shorting bars) 127 extending at an angle of 45 degrees with respect to an extending direction (for example, y direction) of the anisotropic magnetoresistance 123, the short-circuiting bars are disposed on the ferromagnetic film (ferromagnetic film)125 in parallel and spaced apart from each other, and the ferromagnetic film 125 is a main body of the anisotropic magnetoresistance 123, and the extending direction thereof is the extending direction of the anisotropic magnetoresistance 123. In the present embodiment, the extending direction of the shorting bar 127 of the magnetoresistive sensor 122a is substantially the same as the extending direction of the shorting bar 127 of the magnetoresistive sensor 122c, the extending direction of the shorting bar 127 of the magnetoresistive sensor 122b is substantially the same as the extending direction of the shorting bar 127 of the magnetoresistive sensor 122d, and the extending direction of the shorting bar 127 of the magnetoresistive sensor 122a is different from the extending direction of the shorting bar 127 of the magnetoresistive sensor 122b, for example, by 90 degrees.

By the arrangement of the magnetization directions of the magnetoresistive sensors 122 a-122 d and the direction of the shorting bar 127, when the external magnetic field has a magnetic field component in the + x direction, the resistances of the

magnetoresistive sensors

122b and 122c will change by + Δ R, and the resistances of the

magnetoresistive sensors

122a and 122d will change by- Δ R, so that when a voltage difference is applied between the node Q1 and the node Q2, a voltage difference exists between the node Q3 and the node Q4, and the magnitude of the voltage difference is positively correlated to the magnitude of the magnetic field component in the x direction. In this way, the magnitude of the x-direction magnetic field component can be obtained by the voltage difference between the terminal Q3 and the terminal Q4, so that the first magnetic field sensing unit 120 can sense the x-direction magnetic field component.

The arrangement of the magnetization direction of the magnetoresistive sensors 122 a-122 d and the direction of the shorting bar 127 is not limited to the above arrangement, and in other embodiments, the magnetization direction of the magnetoresistive sensors 122 a-122 d and the direction of the shorting bar 127 may be arranged in other arrangement directions, so long as when there is an x-direction magnetic field component and a voltage difference is applied between the terminal Q1 and the terminal Q2, a voltage difference is generated between the terminal Q3 and the terminal Q4, or when there is an x-direction magnetic field component and a voltage difference is applied between the terminal Q3 and the terminal Q35 4, a voltage difference is generated between the terminal Q1 and the terminal Q2.

In the present embodiment, the sensing axis a2 of the magnetoresistive sensors 132 of the second magnetic field sensing unit 130 is substantially parallel to the inclined extension direction D1 of the first inclined plane 114, and the sensing axis A3 of the magnetoresistive sensors 142 of the third magnetic field sensing unit 140 is substantially parallel to the inclined extension direction D2 of the second inclined plane 116. Specifically, the plurality of anisotropic magnetoresistors connected in series with each other of each magnetoresistive sensor 132 have an extension direction substantially parallel to the x-direction, and the anisotropic magnetoresistors are arranged parallel to each other and along the oblique extension direction D1 on the first slope 114. In addition, the extension direction of the shorting bar of each magnetoresistive sensor 132 is 45 degrees from the extension direction of the anisotropic magnetoresistance. In addition, the extension direction of the multiple anisotropic magnetoresistors connected in series with each other of each magnetoresistive sensor 142 is substantially parallel to the x-direction, and the anisotropic magnetoresistors are arranged on the second inclined plane 116 parallel to each other and along the inclined extension direction D2. In addition, the extension direction of the shorting bar of each magnetoresistive sensor 142 is at an angle of 45 degrees to the extension direction of the anisotropic magnetoresistance.

Fig. 2A is an equivalent circuit diagram of the second magnetic field sensing unit and the third magnetic field sensing unit in fig. 1A when sensing the y-direction magnetic field component, and fig. 2B is an equivalent circuit diagram of the second magnetic field sensing unit and the third magnetic field sensing unit in fig. 1A when sensing the z-direction magnetic field component. Referring to fig. 1A and fig. 2A, when the external magnetic field has a + y-direction magnetic field component, the magnetization directions of the

magnetoresistive sensors

132 and 142 and the extension direction of the shorting bar are properly configured, so that the resistances of the magnetoresistive sensor 132A and the magnetoresistive sensor 142A generate + Δ R changes, and the resistances of the magnetoresistive sensor 132b and the magnetoresistive sensor 142b generate- Δ R changes, at this time, the terminal P3 and the terminal P6 are both electrically connected to the terminal P7, and the terminal P4 and the terminal P5 are both electrically connected to the terminal P8, so that the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 are electrically connected to form a wheatstone full bridge. At this time, a voltage difference is applied between the endpoint P1 and the endpoint P2, so that a voltage difference is generated between the endpoint P7 and the endpoint P8, and the absolute value of the voltage difference between the endpoint P7 and the endpoint P8 is positively correlated with the absolute value of the y-direction magnetic field component. In this way, the magnitude of the y-direction magnetic field component can be obtained by utilizing the voltage difference between the point P7 and the point P8, so that the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 can sense the y-direction magnetic field component.

Referring to fig. 1A and 2B, when the external magnetic field has a + z-direction magnetic field component, the resistances of the magnetoresistive sensor 132B and the magnetoresistive sensor 142a generate a + Δ R change, and the resistances of the magnetoresistive sensor 132a and the magnetoresistive sensor 142B generate a- Δ R change, at this time, the switching circuit 150 is switched to electrically connect the node P3 and the node P5 to the node P7, and electrically connect the node P4 and the node P6 to the node P8, so that the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 are electrically connected to form another wheatstone full bridge. At this time, a voltage difference is applied between the endpoint P1 and the endpoint P2, such that a voltage difference is generated between the endpoint P7 and the endpoint P8, and the absolute value of the voltage difference between the endpoint P7 and the endpoint P8 is positively correlated with the absolute value of the z-direction magnetic field component. In this way, the magnitude of the z-direction magnetic field component can be obtained by utilizing the voltage difference between the point P7 and the point P8, so that the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 can sense the z-direction magnetic field component.

In the magnetic field sensing device 100 of the present embodiment, the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 can be switched into two different wheatstone full bridges through a circuit to sense the magnetic field components in the second direction (e.g., y direction) and the third direction (e.g., z direction), respectively, so that the magnetic field sensing device 100 can sense the magnetic field components in the three directions by using fewer

magnetoresistive sensors

122, 132, and 142. Thus, the structure of the magnetic field sensing device 100 can be simplified, and the volume of the magnetic field sensing device 100 can be reduced. In addition, the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140 are switched by the switching circuit 150 into two wheatstone full bridges for sensing the second direction and the third direction, respectively, so that the signals corresponding to the magnetic field component in the second direction and the magnetic field component in the third direction can be directly output from the two wheatstone full bridges, and can be obtained without calculation by the calculating circuit. Therefore, the magnetic field sensing device 100 can have a simpler structure, thereby reducing the manufacturing cost.

In the present embodiment, the magnetic field sensing apparatus 100 further includes a first magnetization direction setting component 200 and a second magnetization direction setting component 300. The first magnetization direction setting assembly 200 is disposed beside the first magnetic field sensing unit 120 and is used for setting the magnetization direction of the magnetoresistive sensors 122 of the first magnetic field sensing unit 120. The second magnetization direction setting assembly 300 is disposed beside the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140, and is used for setting the magnetization directions of the

magnetoresistive sensors

132 and 142 of the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140.

Specifically, in the present embodiment, the first magnetization direction setting element 200 and the second magnetization direction setting element 300 each include a first spiral conductive unit 210, a second spiral conductive unit 220, and a third spiral conductive unit 230, which will be described as an example of the first magnetization direction setting element 200. The second spiral conductive unit 220 is electrically connected between the first spiral conductive unit 210 and the third spiral conductive unit 230, and a spiral extending direction of the second spiral conductive unit 220 is different from a spiral extending direction of the first spiral conductive unit 210 and different from a spiral extending direction of the third spiral conductive unit 230. In the present embodiment, the spiral extending direction is defined as a current flowing direction when the first spiral conductive element 210, the second spiral conductive element 220 and the third spiral conductive element 230 are connected in series.

Referring to fig. 1C, when current is injected from the terminal C1, the current flows into the first spiral conductive element 210 through the conductive segment 240 and the terminal C2 in sequence, and the current flows in the first spiral conductive element 210 to the terminal C3 in a counterclockwise direction. The current then flows from terminal C3 through conductive segment 250 to terminal C4. Then, the current flows from the terminal C4 to the terminal C5 through the second spiral conductive element 220 in the clockwise direction and then through the third spiral conductive element 230 in the counterclockwise direction. Finally, current flows from terminal C5 through conductive segment 260 to terminal C6 and out of terminal C6. Thus, in fig. 1C, the helical extension direction of the first helical conductive element 210 is counterclockwise, the helical extension direction of the second helical conductive element 220 is clockwise, and the helical extension direction of the third helical conductive element 230 is counterclockwise.

In the present embodiment, the conductive segments of the first spiral-shaped conductive unit 210 and the second spiral-shaped conductive unit 220 having the current flow E1, the current flow E2 and the current flow E3 are located directly above the magnetoresistive sensor 122a and the magnetoresistive sensor 122b, wherein the current flow E1, the current flow E2 and the current flow E3 are oriented in the + x direction, so that the magnetization directions of the magnetoresistive sensor 122a and the magnetoresistive sensor 122b can be set to the-y direction. In addition, the conductive segments of the second spiral conductive unit 220 and the third spiral conductive unit 230 having the current flow direction E4, the current flow direction E5 and the current flow direction E6 are located directly above the magnetoresistive sensor 122c and the magnetoresistive sensor 122d, wherein the current flow direction E4, the current flow direction E5 and the current flow direction E6 are oriented in the-x direction, so that the magnetization directions of the magnetoresistive sensor 122c and the magnetoresistive sensor 122d can be set to be in the + y direction. In this way, when the first magnetization direction setting assembly 200 is powered on, the magnetization directions of the magnetoresistive sensors 122a to 122d can be set to appropriate initial values, and the first magnetic field sensing unit 120 can then correctly sense the magnetic field component in the x direction.

In other words, when the current flows through the first spiral-shaped conductive unit 210, the second spiral-shaped conductive unit 220 and the third spiral-shaped conductive unit 230 sequentially, the current directly above or below (e.g., directly above) the magneto-

resistive sensors

122a and 122b of one half bridge of the wheatstone bridge flows to a first direction (e.g., + x direction), and the current directly above or below (e.g., directly above) the magneto-

resistive sensors

122c and 122d of the other half bridge of the wheatstone bridge flows to a second direction (e.g., -x direction), wherein the first direction (e.g., + x direction) is opposite to the second direction (e.g., -x direction).

Similarly, the first spiral-shaped conductive unit 210, the second spiral-shaped conductive unit 220, and the third spiral-shaped conductive unit 230 of the second magnetization direction setting assembly 300 may be disposed above the second magnetic field sensing unit 130 and the third magnetic field sensing unit 140. In addition, the first spiral conductive unit 210, the second spiral conductive unit 220, and the third spiral conductive unit 230 of the first magnetization direction setting assembly 200 are arranged along the y direction, however, the first spiral conductive unit 210, the second spiral conductive unit 220, and the third spiral conductive unit 230 of the second magnetization direction setting assembly 300 may be arranged along the x direction to suitably set the magnetization directions of the

magnetoresistive sensors

132a, 132b, 142a, and 142 b.

In the present embodiment, the first magnetization direction setting element 200 and the first magnetic field sensing unit 120 may form a magnetic field sensing module 400 to measure the x-direction magnetic field component. In addition, the second magnetization direction setting element 300, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140 may form a magnetic field sensing module 500 to measure y-direction magnetic field components and z-direction magnetic field components.

In the magnetic field sensing module 400 and the magnetic field sensing module 500 of the present embodiment, since the spiral extending direction of the second spiral-shaped conductive unit 220 is different from the spiral extending direction of the first spiral-shaped conductive unit 210 and different from the spiral extending direction of the third spiral-shaped conductive unit 230, the magnetization directions of the

magnetoresistive sensors

122, 132, and 142 of the magnetic field sensing units (e.g., the first magnetic field sensing unit 120, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140) can be effectively set by using three simple spiral conductive units, so that the magnetic field sensing module 400 and the magnetic field sensing module 500 of the present embodiment have simple structures and small volumes.

In addition, since the first magnetization direction setting element 200 and the second magnetization direction setting element 300 have simple structures and short winding lengths, and thus have small resistance, the current can be large under the same applied voltage, so that the generated magnetic field is strong. Thus, the magnetic field sensing module 400 and the magnetic field sensing module 500 have a larger sensing range.

In addition, the magnetization direction configurations of the first magnetic field sensing unit 120, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140 can be initialized by the first magnetization direction setting element 200 and the second magnetization direction setting element 300, so that the first magnetic field sensing unit 120, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140 can still be normally used after the impact of the strong external magnetic field. In addition, by changing the current direction of the first magnetization direction setting element 200 and the second magnetization direction setting element 300 to form different magnetization direction configurations of the first magnetic field sensing unit 120, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140, the dynamic system offset (dynamic system offset) of the first magnetic field sensing unit 120, the second magnetic field sensing unit 130, and the third magnetic field sensing unit 140 can be measured. By subtracting the measured value from the dynamic system offset, the correct magnetic field component value can be obtained more quickly. Similarly, low frequency noise (low frequency noise) can be subtracted to make the measured magnetic field component values more accurate.

FIG. 3 is an exploded view of a magnetic field sensing module according to another embodiment of the present invention. Referring to fig. 3, the magnetic field sensing module 400a of the present embodiment is similar to the magnetic field sensing module 400 of fig. 1C, and the two main differences are as follows. In the magnetic field sensing module 400a of the present embodiment, the first magnetization direction setting assembly 200a includes a plurality of first conductive segments 210a, a plurality of second conductive segments 220a, a plurality of first conductive vias 230a, and a plurality of second conductive vias 240 a. The first conductive segments 210a are disposed on one side (e.g., the upper side) of the upper side and the lower side of the first magnetic field sensing unit 120, and the second conductive segments 220a are disposed on the other side (e.g., the lower side) of the upper side and the lower side of the first magnetic field sensing unit 120. The first conductive vias 230a connect a portion of the first conductive segments 210a and a portion of the second conductive segments 220a to form a first spiral conductive unit 250a, and the second conductive vias 240a connect another portion of the first conductive segments 210a and another portion of the second conductive segments 220a to form a second spiral conductive unit 260a, wherein a spiral extending direction of the first spiral conductive unit 250a is different from a spiral extending direction of the second spiral conductive unit 260 a.

In the embodiment, the current flowing into the first conductive segment 211 through the contact 270a flows through the first conductive segment 211 to the first conductive via 231, and then flows through the second conductive segment 221 to the first conductive via 232. Then, the current flows from the first via hole 232 through the first portion 2121 of the first conductive segment 212, so that the current flows clockwise, and the first conductive segment 211, the first via hole 231, the second conductive segment 221, the first via hole 232, and the first portion 2121 of the first conductive segment 212 form a first spiral conductive unit 250a, and the spiral extending direction thereof is clockwise.

Then, the current flows from the first portion 2121 to the second portion 2122 of the first conductive segment 212, and then flows to the second conductive segment 222 through the second via 241 after flowing through the second portion 2122. Thereafter, current flows from second conductive segment 222 to first conductive segment 213 via second conductive via 242. Finally, current flows from the first conductive segment to contact 280a and out of the first magnetization direction-setting component 200a from contact 280 a. Thus, the current flows counterclockwise from the second portion 2122, and the second portion 2122, the second via 241, the second conductive segment 222, the second via 242 and the first conductive segment 213 form a second spiral conductive unit 260a, and the spiral extending direction thereof is counterclockwise.

In the present embodiment, the first spiral-shaped conductive unit 250a is wound around the magnetoresistive sensor 122a and the magnetoresistive sensor 122b, so that the magnetization directions of the magnetoresistive sensor 122a and the magnetoresistive sensor 122b can be set to the-y direction. In addition, the second spiral conductive unit 260a is wound around the magnetoresistive sensor 122c and the magnetoresistive sensor 122d, so that the magnetization directions of the magnetoresistive sensor 122c and the magnetoresistive sensor 122d can be set to the + y direction.

In the present embodiment, one of the first conductive segments 210a (e.g., the first conductive segment 212) is a U-shaped conductive segment, one portion (i.e., the first portion 2121) of the U-shaped conductive segment belongs to the first spiral-shaped conductive unit 250a, and the other portion (i.e., the second portion 2122) of the U-shaped conductive segment belongs to the second spiral-shaped conductive unit 260 a.

In this embodiment, the second magnetization direction setting assembly may also have a first spiral conductive unit 250a and a second spiral conductive unit 260a as the first magnetization direction setting assembly 200a, wherein the first spiral conductive unit 250a is wound around the magnetic resistance sensor 132b and the magnetic resistance sensor 142b, the second spiral conductive unit 260a is wound around the magnetic resistance sensor 132a and the magnetic resistance sensor 142a, and the first spiral conductive unit 250a and the second spiral conductive unit 260a are arranged along the-x direction.

In the magnetic field sensing module 400a of this embodiment, since the spiral extending direction of the first spiral-shaped conductive unit 250a is different from the spiral extending direction of the second spiral-shaped conductive unit 260a, the magnetization directions of the

magnetoresistive sensors

122 and 142 of the magnetic field sensing units (e.g., the first magnetic field sensing unit 120 and the second magnetic field sensing unit 130) can be effectively set by using a plurality of simple first conductive segments 210a, a plurality of second conductive segments 220a, and vias (e.g., the first via 230a and the second via 240 a). Therefore, the magnetic field sensing module 400a of the present embodiment has a simple structure and a small volume. In addition, since the first magnetization direction setting element 200a has a simple structure and a short winding length, and thus has a small resistance, the current can be increased under the same applied voltage, so that the generated magnetic field is increased. Thus, the magnetic field sensing module 400a has a larger sensing range.

In the present embodiment, the first conductive segments 210a partially overlap the second conductive segments 220 a. For example, an edge of the first conductive segment 211 on one side in the + y direction (i.e., the lower right side in FIG. 3) overlaps an edge of the second conductive segment 221 on one side in the-y direction (i.e., the upper left side in FIG. 3), and an edge of the second conductive segment 221 on one side in the + y direction overlaps an edge of the first portion 2121 of the first conductive segment 212 on one side in the-y direction. Further, an edge of the second portion 2122 of the first conductive segment 212 on one side in the + y direction overlaps an edge of the second conductive segment 222 on one side in the-y direction, and an edge of the second conductive segment 222 on one side in the + y direction overlaps an edge of the first conductive segment 213 on one side in the-y direction. When the first conductive segments 210a and the second conductive segments 220a are partially overlapped, the magnetic fields generated by the first spiral-shaped conductive unit 250a and the second spiral-shaped conductive unit 260a are stronger under the same current. Thus, the magnetic field sensing module 400a of the present embodiment has a larger sensing range.

FIG. 4 is an exploded view of a magnetic field sensing module according to yet another embodiment of the present invention. Referring to fig. 4, the magnetic field sensing module 400b of the present embodiment is similar to the magnetic field sensing module 400a of fig. 3, and the two main differences are as follows. In the magnetic field sensing module 400b of the present embodiment, the first magnetization direction setting element 200b includes a plurality of first

conductive segments

211b, 212b, 213b and 214b, a plurality of second

conductive segments

221b, 222b and 223b, a plurality of first

conductive vias

231b, 232b and 233b, and a plurality of second

conductive vias

241b, 242b and 243 b.

In the present embodiment, the current flowing into the first conductive segment 211b through the contact 270a flows through the first conductive segment 211b to the first via hole 231b, and then flows through the second conductive segment 221b to the first via hole 232 b. Next, current flows from first conductive via 232b through first conductive segment 212b to first conductive via 233b, and then from first conductive via 233b through first portion 2221b of second conductive segment 222 b. Thus, the current flows clockwise, and the first conductive segment 211b, the first via hole 231b, the second conductive segment 221b, the first via hole 232b, the first conductive segment 212b, the first via hole 233b and the first portion 2221b of the second conductive segment 222b form the first spiral conductive unit 250b, and the spiral extending direction thereof is clockwise.

Next, the current flows from the first portion 2221b to the second portion 2222b of the second conductive segment 222b, and then flows through the second conductive via 241b to the first conductive segment 213b after flowing through the second portion 2222 b. Then, the current flows through first conductive segment 213b to second conductive via 242b, and then flows from second conductive via 242b through second conductive segment 223b to second conductive via 243 b. Finally, the current flows from the second conductive via 243b to the contact 280a through the first conductive segment 214b, and flows out of the first magnetization direction setting element 200b from the contact 280 a. Thus, from the second portion 2222b, the current flows counterclockwise, and the second portion 2222b, the second via 241b, the first conductive segment 213b, the second via 242b, the second conductive segment 223b, the second via 243b and the first conductive segment 214b form the second spiral conductive element 260b, and the spiral extending direction thereof is counterclockwise.

In the present embodiment, the first spiral-shaped conductive unit 250b is wound around the magnetoresistive sensor 122a and the magnetoresistive sensor 122b, so that the magnetization directions of the magnetoresistive sensor 122a and the magnetoresistive sensor 122b can be set to the-y direction. In addition, the second spiral conductive unit 260b winds the magnetic resistance sensor 122c and the magnetic resistance sensor 122d, so that the magnetization directions of the magnetic resistance sensor 122c and the magnetic resistance sensor 122d can be set to + y direction.

In the present embodiment, one of the second conductive segments (e.g., second conductive segment 222b) is a U-shaped conductive segment, one portion of the U-shaped conductive segment (i.e., first portion 2221b) belongs to the first spiral conductive element 250b, and the other portion of the U-shaped conductive segment (i.e., second portion 2222b) belongs to the second spiral conductive element 260 b. In the present embodiment, the conductive segments located above the first magnetic field sensing unit 120 are named as first conductive segments, and the conductive segments located below the first magnetic field sensing unit 120 are named as second conductive segments. In fact, the conductive segment below the first magnetic field sensing unit 120 may be named as a first conductive segment, and the conductive segment above the first magnetic field sensing unit 120 may be named as a second conductive segment, so that the U-shaped conductive segment belongs to the first conductive segment.

In this embodiment, the second magnetization direction setting assembly may also have a first spiral conductive unit 250b and a second spiral conductive unit 260b as the first magnetization direction setting assembly 200b, wherein the first spiral conductive unit 250b is wound around the magnetic resistance sensor 132b and the magnetic resistance sensor 142b, the second spiral conductive unit 260b is wound around the magnetic resistance sensor 132a and the magnetic resistance sensor 142a, and the first spiral conductive unit 250b and the second spiral conductive unit 260b are arranged along the-x direction.

In the present embodiment, the first conductive segments and the second conductive segments at least partially overlap, and the overlapping area is larger than that of the embodiment of fig. 3, so that the magnetic field generation efficiency is larger.

FIG. 5 is an exploded view of a magnetic field sensing module according to yet another embodiment of the present invention. Referring to fig. 5, the magnetic field sensing module 400c of the present embodiment is similar to the magnetic field sensing module 400a of fig. 3, and the two main differences are as follows. In the magnetic field sensing module 400c of the present embodiment, the first magnetization direction setting element 200c includes a plurality of first

conductive segments

211c, 212c, 213c, 214c, and 215c, a plurality of second

conductive segments

221c, 222c, 223c, and 224c, a plurality of first

conductive vias

231c, 232c, 233c, and 234c, and a plurality of second

conductive vias

241c, 242c, 243c, and 244 c.

In the present embodiment, the current flowing into the first conductive segment 211c through the contact 270a flows through the first conductive segment 211c to the first via hole 231c, and then flows through the second conductive segment 221c to the first via hole 232 c. Next, current flows from first conductive via 232c through first conductive segment 212c to first conductive via 233c, and then from first conductive via 233c through second conductive segment 222c to first conductive via 234 c. Then, the current flows from the first conductive via 234c through the first portion 2131c of the first conductive segment 213 c. Thus, the current flows clockwise, and the first conductive segment 211c, the first conductive via 231c, the second conductive segment 221c, the first conductive via 232c, the first conductive segment 212c, the first conductive via 233c, the second conductive segment 222c, the first conductive via 234c, and the first portion 2131c of the first conductive segment 213c form a first spiral conductive unit 250c, and the spiral extending direction thereof is clockwise.

Then, the current flows from the first portion 2131c to the second portion 2132c of the first conductive segment 213c, and then flows to the second conductive segment 223c through the second conductive via 241c after flowing through the second portion 2132 c. The current then flows through second conductive segment 223c to second conductive via 242c, and from second conductive via 242c to second conductive via 243c through first conductive segment 214 c. The current then flows from the second conductive via 243c to the second conductive via 244c via the second conductive segment 224 c. Finally, current flows from second conductive via 244c to contact 280a via first conductive segment 215c, and out of first magnetization direction-setting component 200c from contact 280 a. Thus, the current flows counterclockwise from the second portion 2132c, and the second portion 2132c, the second via 241c, the second conductive segment 223c, the second via 242c, the first conductive segment 214c, the second via 243c, the second conductive segment 224c, the second via 244c, and the first conductive segment 215c form a second spiral conductive unit 260c, and the spiral extending direction thereof is counterclockwise.

In the present embodiment, the first spiral-shaped conductive unit 250c is wound around the magnetoresistive sensor 122a and the magnetoresistive sensor 122b, so that the magnetization directions of the magnetoresistive sensor 122a and the magnetoresistive sensor 122b can be set to the-y direction. In addition, the second spiral conductive unit 260c is wound around the magnetoresistive sensor 122c and the magnetoresistive sensor 122d, so that the magnetization directions of the magnetoresistive sensor 122c and the magnetoresistive sensor 122d can be set to the + y direction.

In the present embodiment, one of the first conductive segments (e.g., the first conductive segment 213c) is a U-shaped conductive segment, a portion of the U-shaped conductive segment (i.e., the first portion 2131c) belongs to the first spiral conductive unit 250c, and another portion of the U-shaped conductive segment (i.e., the second portion 2132c) belongs to the second spiral conductive unit 260 c.

In this embodiment, the second magnetization direction setting assembly may also have a first spiral conductive unit 250c and a second spiral conductive unit 260c as the first magnetization direction setting assembly 200c, wherein the first spiral conductive unit 250c is wound around the magnetic resistance sensor 132b and the magnetic resistance sensor 142b, the second spiral conductive unit 260c is wound around the magnetic resistance sensor 132a and the magnetic resistance sensor 142a, and the first spiral conductive unit 250c and the second spiral conductive unit 260c are arranged along the-x direction.

In summary, in the magnetic field sensing apparatus according to the embodiment of the invention, the second magnetic field sensing unit and the third magnetic field sensing unit can be switched into two different wheatstone full bridges through the circuit to sense the magnetic field components in the second direction and the third direction, respectively, so that the magnetic field sensing apparatus can sense the magnetic field components in the three directions by using fewer magnetoresistive sensors. Therefore, the structure of the magnetic field sensing device can be simplified, and the volume of the magnetic field sensing device can be reduced. In the magnetic field sensing module according to the embodiment of the present invention, since the spiral extending direction of the second spiral-shaped conductive unit is different from the spiral extending direction of the first spiral-shaped conductive unit and different from the spiral extending direction of the third spiral-shaped conductive unit, the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit can be effectively set by using three simple spiral conductive units, so that the magnetic field sensing module according to the embodiment of the present invention has a simple structure and a small volume. In the magnetic field sensing module according to the embodiment of the invention, since the spiral extending direction of the first spiral-shaped conductive unit is different from the spiral extending direction of the second spiral-shaped conductive unit, the magnetization directions of the magnetoresistive sensors of the magnetic field sensing unit can be effectively set by using the plurality of simple first conductive segments, the plurality of second conductive segments and the conductive through hole. Therefore, the magnetic field sensing module of the embodiment of the invention has a simple structure and can be small in size.

Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited to the embodiments, and various changes and modifications can be made by one skilled in the art without departing from the spirit and scope of the invention.

Claims

1. A magnetic field sensing module, comprising:

the magnetic field sensing unit comprises a plurality of magnetic resistance sensors connected into a Wheatstone bridge and is used for sensing a magnetic field component in one direction; and

a magnetization direction setting assembly disposed beside the magnetic field sensing unit and configured to set magnetization directions of the plurality of magnetoresistive sensors of the magnetic field sensing unit, the magnetization direction setting assembly comprising:

a first helical conductive element;

a second helical conductive element; and

a third helical conductive element, wherein the second helical conductive element is electrically connected between the first helical conductive element and the third helical conductive element,

wherein the first spiral conductive element, the second spiral conductive element and the third spiral conductive element are electrically connected in series, when current flows through the first spiral conductive element, the second spiral conductive element and the third spiral conductive element in sequence, the current flowing direction of the first spiral conductive element is a first spiral direction, the current flowing direction of the second spiral conductive element is a second spiral direction different from the first spiral direction, and the current flowing direction of the third spiral conductive element is the first spiral direction, wherein the first spiral direction is clockwise and the second spiral direction is counterclockwise, or the first spiral direction is counterclockwise and the second spiral direction is clockwise.

2. The magnetic field sensing module of claim 1, wherein the plurality of magnetoresistive sensors are anisotropic magnetoresistive sensors.

3. The magnetic field sensing module according to claim 1, wherein when current flows through the first helical conductive element, the second helical conductive element and the third helical conductive element in sequence, current directly above or below the plurality of magnetoresistive sensors belonging to one half of the Wheatstone bridge flows in a first direction, and current directly above or below the plurality of magnetoresistive sensors belonging to the other half of the Wheatstone bridge flows in a second direction, wherein the first direction is opposite to the second direction.

4. A magnetic field sensing module, comprising:

a plurality of first conductive segments disposed on one side of the upper and lower sides of the magnetic field sensing unit;

a plurality of second conductive segments disposed on the other side of the upper side and the lower side of the magnetic field sensing unit;

the plurality of first conductive through holes connect part of the plurality of first conductive segments and part of the plurality of second conductive segments into a first spiral conductive unit; and

and a plurality of second conductive through holes connecting the plurality of first conductive segments of another part with the plurality of second conductive segments of another part to form a second spiral conductive unit, wherein the first spiral conductive unit and the second spiral conductive unit are electrically connected in series, when current flows through the first spiral conductive unit and the second spiral conductive unit in sequence, the current flow direction of the first spiral conductive unit is a first spiral direction, the current flow direction of the second spiral conductive unit is a second spiral direction different from the first spiral direction, wherein the first spiral direction is clockwise and the second spiral direction is counterclockwise, or the first spiral direction is counterclockwise and the second spiral direction is clockwise.

5. The magnetic field sensing module of claim 4, wherein one of the plurality of first conductive segments is a U-shaped conductive segment, a portion of the U-shaped conductive segment belonging to the first helical conductive element and another portion of the U-shaped conductive segment belonging to the second helical conductive element.

6. The magnetic field sensing module of claim 4, wherein the plurality of first conductive segments partially overlap the plurality of second conductive segments.

7. The magnetic field sensing module of claim 4, wherein the plurality of magnetoresistive sensors are anisotropic magnetoresistive sensors.