CN110044476A - 一种基于反铁磁非磁金属异质结的太赫兹探测器 - Google Patents
一种基于反铁磁非磁金属异质结的太赫兹探测器 Download PDFInfo
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Abstract
本发明公开了一种基于反铁磁非磁金属异质结的太赫兹探测器,属于光电探测技术领域，该方法利用反铁磁材料在太赫兹波段的反铁磁耦合共振吸收特性，将太赫兹辐射能量转化为自旋波，利用具有强自旋‑轨道耦合的非磁金属中逆自旋霍尔效应将自旋波在界面处转化为电荷流，在非磁金属表面两侧电极读出电压信号，从而实现对太赫兹辐射探测。该发明利用了电子自旋属性来实现太赫兹探测，是一种自旋太赫兹探测器，具有零功耗、响应快、易集成、可室温工作等优点。
Description
技术领域
本发明属于光电探测技术领域，具体涉及到利用反铁磁材料在太赫兹波段的反铁磁耦合共振吸收特性，将太赫兹辐射能量转化为自旋波，再利用具有强自旋-轨道耦合的非磁金属中逆自旋霍尔效应将自旋波在界面处转化为电荷流，最后在非磁金属表面两侧电极读出电压信号，从而实现对太赫兹辐射探测。该发明利用电子自旋来实现太赫兹探测，是一种自旋太赫兹探测器，具有零功耗、响应快、易集成、可室温工作等优点。
背景技术
太赫兹电磁波在物体成像、环境监测、医疗诊断、射电天文和宽带移动通讯等方面具有重大的科学价值和广阔的应用前景，因此世界发达国家争相将太赫兹波科学技术列为战略性科技方向。然而，太赫兹技术距离广泛的实际应用还面临诸多挑战。其中制约太赫兹技术发展的主要因素之一是可室温下工作的高灵敏度、低成本、低功耗、响应速度快的太赫兹探测技术的缺乏。本发明提出一种太赫兹探测器。该探测器利用反铁磁材料在太赫兹波段的反铁磁耦合共振吸收特性，将太赫兹辐射能量转化为自旋波，再利用具有强自旋-轨道耦合的非磁金属中逆自旋霍尔效应将自旋波在界面处转化为电荷流，最后在非磁金属表面两侧电极读出电压信号，从而实现对太赫兹辐射探测。因为所用反铁磁材料的反铁磁转变温度都在室温以上，自旋流-电荷流的转换速度非常之快(亚皮秒级)，无需外接电源，所以依据此方法制作的太赫兹探测器具有可室温下工作、响应速度快、低功耗、制作成本低等优点。
发明内容
本发明包括利用反铁磁材料在太赫兹波段的反铁磁耦合共振吸收特性和具有强自旋-轨道耦合的非磁金属中的逆自旋霍尔效应来实现太赫兹探测器；
太赫兹探测器在衬底层1上依次有反铁磁材料层2、非磁金属材料层3、电极层4；
所述的衬底层1的材料为需要在工作的太赫兹波段有较高透过率的高阻硅Si或本征锗Ge；
所述的反铁磁材料层2的反铁磁材料为：氧化镍NiO,氧化钴CoO,三氧化二铬Cr2O3,铁酸铋BiFeO3或XFeO3,X代表稀土元素；
所述的非磁金属材料层3的非磁金属材料为铂Pt，钨W，钯Pd或钽Ta；
所述的电极层4的材料为金Au或铝Al；
所述的探测器结构以在太赫兹波段具有较高透过率的材料作衬底，在其上沉积厚度为3-300nm反铁磁薄膜，而后沉积厚度为3-300nm非磁金属层，最后在非磁金属层两侧沉积电极。
其具体实现方法如下：
在衬底上沉积制备反铁磁(NiO(氧化镍)或CoO(氧化钴)或Cr2O3(三氧化二铬)或BiFeO3(铁酸铋)或XFeO3(铁酸X,X代表稀土元素))薄膜，其厚度范围为3-300nm，然后在其上沉积非磁金属(Pt(铂)或W(钨)或Pd(钯)或Ta(钽))薄膜层，其厚度范围为3-300nm，最后在非磁金属层两侧上制备电极(金或铝)用于引出电压信号。
该发明利用了电子自旋属性来实现太赫兹探测，是一种自旋太赫兹探测器，具有零功耗、响应快、易集成、可室温工作等优点。
附图说明
图1为器件结构示意图。
具体实施方式
下面提供通过实验研究得到的实施实例，并对本发明作进一步的详细说明。
实施例1：
在4英寸高阻硅衬底上旋涂光刻胶，光刻出许多块1x2mm2大小的空白长方形区域，然后放入磁控溅射沉积腔内在其上制备NiO反铁磁材料，在溅射沉积反铁磁材料时外加一强度为1000Oe的平行于衬底面的磁场，磁场方向垂直于小长方块的长边。反铁磁层厚度为3nm。然后继续沉积非磁金属Pt层，其厚度为3nm。取出样品进行脱胶，再次旋涂光刻胶，在小长方形两边分别光刻出1x0.5mm2大小的电极区域，然后再次将样品放入磁控溅射沉积腔内沉积厚度为200nm的金电极。取出样品进行脱胶、清洗、切割、点焊引线、封装，完成探测器制作。
实施例2：
在4英寸高阻硅衬底上旋涂光刻胶，光刻出许多块1x2mm2大小的空白长方形区域，然后放入磁控溅射沉积腔内在其上制备Cr2O3反铁磁材料，在溅射沉积反铁磁材料时外加一强度为1000Oe的平行于衬底面的磁场，磁场方向垂直于小长方块的长边。反铁磁层厚度为30nm。然后继续沉积非磁金属W层，其厚度为30nm。取出样品进行脱胶，再次旋涂光刻胶，在小长方形两边分别光刻出1x0.5mm2大小的电极区域，然后再次将样品放入磁控溅射沉积腔内沉积厚度为200nm的金电极。取出样品进行脱胶、清洗、切割、点焊引线、封装，完成探测器制作。
实施例3：
在4英寸高阻硅衬底上旋涂光刻胶，光刻出许多块1x2mm2大小的空白长方形区域，然后放入磁控溅射沉积腔内在其上制备BiFeO3反铁磁材料，在溅射沉积反铁磁材料时外加一强度为1000Oe的平行于衬底面的磁场，磁场方向垂直于小长方块的长边。反铁磁层厚度为300nm。然后继续沉积非磁金属Pd层，其厚度为300nm。取出样品进行脱胶，再次旋涂光刻胶，在小长方形两边分别光刻出1x0.5mm2大小的电极区域，然后再次将样品放入磁控溅射沉积腔内沉积厚度为200nm的金电极。取出样品进行脱胶、清洗、切割、点焊引线、封装，完成探测器制作。
Claims (1)
1.一种基于反铁磁非磁金属异质结的太赫兹探测器，包括衬底层(1)、反铁磁材料层(2)、非磁金属材料层(3)、电极层(4)，其特征在于：
所述的太赫兹探测器在衬底层(1)上依次有反铁磁材料层(2)、非磁金属材料层(3)、电极层(4)；
所述的衬底层(1)的材料为在太赫兹波段有较高透过率的高阻硅或本征锗；
所述的反铁磁材料层(2)的反铁磁材料为：氧化镍NiO,氧化钴CoO,三氧化二铬Cr2O3,铁酸铋BiFeO3或XFeO3,X代表稀土元素，沉积厚度为3-300nm；
所述的非磁金属材料层(3)的非磁金属材料为铂Pt，钨W，钯Pd或钽Ta，沉积厚度为3-300nm；
所述的电极层(4)的材料为金Au或铝Al。
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| CN111487475A (zh) * | 2020-03-26 | 2020-08-04 | 南京大学 | 一种无源低功耗的微波检测方法 |
| CN113437211A (zh) * | 2021-06-25 | 2021-09-24 | 上海理工大学 | 一种基于磁性隧道结的太赫兹波调制器及其制备方法 |
| RU2781081C1 (ru) * | 2022-01-25 | 2022-10-05 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Спинтронный детектор терагерцовых колебаний на основе наногетероструктуры антиферромагнетик - тяжелый металл |
| US20230148297A1 (en) * | 2021-11-10 | 2023-05-11 | Shan Dong University | Magnetic heterojunction structure and method for controlling and achieving logic and multiple-state storage functions |
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| CN109405860A (zh) * | 2018-09-19 | 2019-03-01 | 天津大学 | 基于天线直接匹配的锗硅异质结双极晶体管探测器 |
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| RU2781081C1 (ru) * | 2022-01-25 | 2022-10-05 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Спинтронный детектор терагерцовых колебаний на основе наногетероструктуры антиферромагнетик - тяжелый металл |
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