CN110036564A - Acoustic wave device - Google Patents
Acoustic wave device Download PDFInfo
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- CN110036564A CN110036564A CN201780071170.0A CN201780071170A CN110036564A CN 110036564 A CN110036564 A CN 110036564A CN 201780071170 A CN201780071170 A CN 201780071170A CN 110036564 A CN110036564 A CN 110036564A
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- 239000002184 metal Substances 0.000 claims abstract description 197
- 229910052751 metal Inorganic materials 0.000 claims abstract description 197
- 239000000758 substrate Substances 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 229910003327 LiNbO3 Inorganic materials 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 230000000052 comparative effect Effects 0.000 description 64
- 239000010410 layer Substances 0.000 description 39
- 239000010931 gold Substances 0.000 description 12
- 229910003460 diamond Inorganic materials 0.000 description 8
- 239000010432 diamond Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 210000000170 cell membrane Anatomy 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02937—Means for compensation or elimination of undesirable effects of chemical damage, e.g. corrosion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
Abstract
The present invention provides a kind of acoustic wave device for being able to carry out miniaturization and being able to suppress useless wave.Acoustic wave device (1) has: piezoelectric substrate (2), by LiNbO3It constitutes；IDT electrode (3) is arranged on piezoelectric substrate (2)；And first dielectric film (4), it is arranged on piezoelectric substrate (2), so that covering IDT electrode (3), and be made of silica.IDT electrode (3) has the first metal film for being made of one of Pt, Cu, Mo, Au, W and Ta metal, the Eulerian angles of piezoelectric substrate (2) (θ, it ψ) is (0 ° ± 5 ° of Eulerian angles, -90 °≤θ≤- 70 °, 0 ° ± 5 °), wavelength as defined in electrode finger spacing as IDT electrode (3) is set as λ, the film thickness for having carried out normalized first metal film by wavelength X is set as hm/ λ (%), at this point, the metal of the first metal film and film thickness hm/ λ (%) are any combination shown in table 1.[table 1]
Description
Technical field
The present invention relates to acoustic wave devices.
Background technique
In the past, acoustic wave device was widely used for the filter etc. of pocket telephone.In following 1 disclosures of patent document
One example of acoustic wave device.The acoustic wave device has by LiNbO3The piezoelectric substrate of composition.It is set on piezoelectric substrate
It is equipped with the IDT electrode based on the metal of density ratio Al high.Dielectric layer is provided on piezoelectric substrate, so that being covered on
In IDT electrode.In patent document 1, by the way that the film thickness of above-mentioned metal of IDT electrode and the Eulerian angles of piezoelectric substrate to be set as
In given range, so as to the mechanical-electric coupling sought the electromechanical coupling factor for increasing utilized elastic wave and reduce useless wave
Coefficient.
Citation
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2006-295976 bulletin
Summary of the invention
Subject to be solved by the invention
In recent years, it is desirable that the further miniaturization of acoustic wave device.However, in elastic wave described in Patent Document 1
In device, is minimized to promote, then need to thicken electrode film thickness, but on the other hand, if film thickness is thickened, useless wave
Relative bandwidth become larger, be deteriorated by characteristic.Accordingly, it is difficult to reach while the useless wave of inhibition maintains to pass through characteristic small-sized
Change.
The object of the present invention is to provide a kind of acoustic wave devices for being able to carry out miniaturization and being able to suppress useless wave.
A technical solution to solve project
In some extensive aspect of acoustic wave device of the present invention, have: piezoelectric substrate, by LiNbO3Structure
At；IDT electrode is arranged on the piezoelectric substrate；And first dielectric film, it is arranged on the piezoelectric substrate, so that covering
The IDT electrode is covered, and is made of silica, the IDT electrode has by one of Pt, Cu, Mo, Au, W and Ta metal
The first metal film constituted, the Eulerian angles of the piezoelectric substrateFor Eulerian angles (0 ° ± 5 °, -90 °≤θ≤-
70 °, 0 ° ± 5 °), wavelength as defined in the electrode finger spacing as the IDT electrode is set as λ, will be carried out by the wavelength X
The film thickness of normalized first metal film is set as hm/ λ (%), at this point, the metal and the film of first metal film
Thick hm/ λ (%) is any combination shown in following tables 1.
[table 1]
| The metal of first metal film | The film thickness hm/ λ (%) of first metal film |
| Pt | 6.5≤hm/λ≤25 |
| Cu | 13≤hm/λ≤25 |
| Mo | 15.5≤hm/λ≤25 |
| Au | 6.5≤hm/λ≤25 |
| W | 7.5≤hm/λ≤25 |
| Ta | 7≤hm/λ≤25 |
In the another broad aspect of acoustic wave device of the invention, have: piezoelectric substrate, by LiNbO3It constitutes；
IDT electrode is arranged on the piezoelectric substrate；And first dielectric film, it is arranged on the piezoelectric substrate, so that covering institute
IDT electrode is stated, and is made of silica, the IDT electrode has the first gold medal being made of one of Pt, Cu and Mo metal
Belong to film, the Eulerian angles of the piezoelectric substrateIt, will for Eulerian angles (0 ° ± 5 °, -90 °≤θ≤- 27.5 °, 0 ° ± 5 °)
The wavelength as defined in the electrode finger spacing of the IDT electrode is set as λ, and normalized described will have been carried out by the wavelength X
The film thickness of one metal film is set as hm/ λ (%), and the film of normalized first dielectric film will have been carried out by the wavelength X
Thickness is set as hs/ λ (%), at this point, the metal of first metal film, the film thickness hm/ λ (%), the film thickness hs/ λ (%) with
And the Eulerian angles of the piezoelectric substrateIn θ be following 2~tables of table 9 shown in any combination.
[table 2]
[table 3]
[table 4]
[table 5]
[table 6]
[table 7]
[table 8]
[table 9]
In another specific aspect of acoustic wave device of the invention, in the piezoelectric substrate and the IDT electrode
Between be provided with the intermediate coat being made of dielectric.In this case, mechanical-electric coupling can be adjusted while inhibiting useless wave
Coefficient.Thereby, it is possible to adjust the relative bandwidth of acoustic wave device.
In another specific aspect of acoustic wave device of the invention, the IDT electrode has described in conductivity ratio
The second high metal film of first metal film, in the IDT electrode, using the piezoelectric substrate side as lower layer and will with it is described
When piezoelectric substrate side opposite side is as upper layer, first metallic diaphragm is stacked in than second metal film by upper layer.In the feelings
Under condition, it can further reduce the influence of the film thickness of the first dielectric film to the relative bandwidth of useless wave.
In another specific aspect of acoustic wave device of the invention, the is provided on first dielectric film
Two dielectric films.In this case, it can easily be done the adjustment of frequency.
In an also specific aspect for acoustic wave device of the invention, SH wave is utilized.In this case, Neng Goute
Not suitably using the present invention.
Invention effect
In accordance with the invention it is possible to provide a kind of acoustic wave device for being able to carry out miniaturization and being able to suppress useless wave.
Detailed description of the invention
Fig. 1 be the first embodiment of the present invention is related to acoustic wave device front sectional view.
Fig. 2 is the amplification front sectional view of the electrode finger of the IDT electrode in first embodiment of the invention.
Fig. 3 is the figure of the film thickness for showing the first metal film being made of Pt and the relationship of the velocity of sound.
Fig. 4 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Pt in the first comparative example
The figure of relationship.
Fig. 5 is to show to make the film thickness of the first dielectric film not in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where, being made of Pt.
Fig. 6 is the figure of the film thickness for showing the first metal film being made of Cu and the relationship of the velocity of sound.
Fig. 7 is the figure of the film thickness for showing the first metal film being made of Mo and the relationship of the velocity of sound.
Fig. 8 is the figure of the film thickness for showing the first metal film being made of Au and the relationship of the velocity of sound.
Fig. 9 is the figure of the film thickness for showing the first metal film being made of W and the relationship of the velocity of sound.
Figure 10 is the figure of the film thickness for showing the first metal film being made of Ta and the relationship of the velocity of sound.
Figure 11 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Cu in the first comparative example
Relationship figure.
Figure 12 is to show the film thickness for making the first dielectric film in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where difference, being made of Cu.
Figure 13 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Mo in the first comparative example
Relationship figure.
Figure 14 is to show the film thickness for making the first dielectric film in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where difference, being made of Mo.
Figure 15 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Au in the first comparative example
Relationship figure.
Figure 16 is to show the film thickness for making the first dielectric film in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where difference, being made of Au.
Figure 17 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of W in the first comparative example
The figure of relationship.
Figure 18 is to show the film thickness for making the first dielectric film in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where difference, being made of W.
Figure 19 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Ta in the first comparative example
Relationship figure.
Figure 20 is to show the film thickness for making the first dielectric film in first embodiment of the invention and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film in the case where difference, being made of Ta.
Figure 21 is the front sectional view for the acoustic wave device that the variation of first embodiment of the invention is related to.
Figure 22 is be made of Pt shown in the variation and the second comparative example of first embodiment of the invention
The figure of the relationship of the relative bandwidth of the film thickness of one metal film and useless wave.
Figure 23 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 22.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 24 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 27.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 25 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 32.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 26 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 37.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 27 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 42.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 28 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 47.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 29 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 52.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 30 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 57.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 31 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 62.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Pt
Figure.
Figure 32 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 32.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 33 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 37.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 34 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 42.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 35 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 47.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 36 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 52.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 37 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 57.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 38 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 62.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 39 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 67.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 40 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 72.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 41 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 77.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 42 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 82.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 43 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 87.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 44 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 92.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Cu
Figure.
Figure 45 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 32.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 46 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 37.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 47 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 42.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 48 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 47.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 49 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 52.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 50 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 57.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 51 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 62.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 52 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 67.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 53 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 72.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 54 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 77.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 55 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 82.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 56 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 87.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Figure 57 be show the first dielectric film in second embodiment of the present invention film thickness hs/ λ be 92.5% when,
The relationship of the relative bandwidth of θ and useless wave in the film thickness and Eulerian angles (0 °, θ, 0 °) of the first metal film being made of Mo
Figure.
Specific embodiment
Hereinafter, being illustrated by referring to accompanying drawing to specific embodiment of the invention, thus the clear present invention.
In addition, it is necessary to point out, be in each embodiment that this specification is recorded it is illustrative, can be in different embodiment party
Aliquot replacement or the combination of structure are carried out between formula.
Fig. 1 be the first embodiment of the present invention is related to acoustic wave device front sectional view.Fig. 2 is the first embodiment party
The amplification front sectional view of the electrode finger of IDT electrode in formula.
Acoustic wave device 1 shown in FIG. 1 is the acoustic wave device that SH wave is utilized, using R wave as useless wave.Elasticity
Wave apparatus 1 has by LiNbO3The piezoelectric substrate 2 of composition.The Eulerian angles of piezoelectric substrate 2For Eulerian angles (0 ° ,-
90 °≤θ≤- 70 °, 0 °).
IDT electrode 3 is provided on piezoelectric substrate 2.There are IDT electrode 3 multiple electrodes to refer to 3a.It is set on piezoelectric substrate 2
It is equipped with the first dielectric film 4, so that covering IDT electrode 3.In the present embodiment, the first dielectric film 4 is by SiO2It constitutes.
In addition, the material about the first dielectric film 4, is also able to use SiO2Silica in addition.Above-mentioned silica is simultaneously
It is not limited to SiO2, use SiOx(x is integer) indicates.
The second dielectric film 5 is provided on the first dielectric film 4.In the present embodiment, the second dielectric film 5 by
SiN is constituted.By having the second dielectric film 5, so as to be easy to carry out the adjustment of frequency.In addition, the second dielectric film 5
Material be not limited to above-mentioned material.In the case where the second dielectric film 5 is made of the material other than SiN, such as also can
Enough moisture-proofs etc. for suitably improving acoustic wave device 1.But, the second dielectric film 5 is not necessarily set.
As shown in Fig. 2, in the present embodiment, IDT electrode 3 is by being laminated with the electrode layer 3a5 of first electrode layer 3a1~the 5th
Laminated metal film constitute.The electrode layer 3a5 of first electrode layer 3a1~the 5th is sequentially laminated with from 2 side of piezoelectric substrate.
Here, the 4th electrode layer 3a4 is the first metal film in the present invention.As long as IDT electrode 3, which at least has, is used as first
4th electrode layer 3a4 of metal film.First metal film is the main electrode in IDT electrode 3.In addition, in the present specification, institute
Main electrode is called, is the overriding electrode layer in the excitation of elastic wave.
First electrode layer 3a1 shown in Fig. 2 is made of NiCr.First electrode layer 3a1 is the adhesion layer in IDT electrode 3.It is logical
It crosses with first electrode layer 3a1, so as to improve the adhesion of IDT electrode 3 Yu piezoelectric substrate 2.The second electrode lay 3a2 is by Al
It constitutes.The second electrode lay 3a2 be electric conductivity it is higher than above-mentioned first metal film, the present invention in the second metal film.By having
The second electrode lay 3a2, so as to improve the electric conductivity of IDT electrode 3.Third electrode layer 3a3 is made of Ti.Third electrode layer
3a3 is the diffusion preventing layer in IDT electrode 3.By with third electrode layer 3a3, thus be not likely to produce the second electrode lay 3a2 with
Phase counterdiffusion between 4th electrode layer 3a4, therefore it is not likely to produce the deterioration of the electrical characteristics of IDT electrode 3.
4th electrode layer 3a4 is made of one of Pt, Cu, Mo, Au, W and Ta metal.Here, will be by IDT electrode 3
Electrode finger spacing as defined in wavelength be set as λ.At this point, the 4th electrode layer 3a4 has been carried out normalized film thickness by wavelength X
It is set as hm/ λ (%).At this point, the type and film thickness hm/ λ (%) of the metal of the 4th electrode layer 3a4 are shown in following tables 10
Any combination.That is, in the case where the 4th electrode layer 3a4 is made of Pt, film thickness hm/ λ (%) be 6.5% or more and 25% with
Under.In the case where the 4th electrode layer 3a4 is made of Cu, film thickness hm/ λ (%) is 13% or more and 25% or less.In the 4th electricity
In the case that pole layer 3a4 is made of Mo, film thickness hm/ λ (%) is 15.5% or more and 25% or less.The 4th electrode layer 3a4 by
In the case that Au is constituted, film thickness hm/ λ (%) is 6.5% or more and 25% or less.The case where the 4th electrode layer 3a4 is made of W
Under, film thickness hm/ λ (%) is 7.5% or more and 25% or less.In the case where the 4th electrode layer 3a4 is made of Ta, film thickness hm/ λ
(%) is 7% or more and 25% or less.
[table 10]
| The metal of first metal film | The film thickness hm/ λ (%) of first metal film |
| Pt | 6.5≤hm/λ≤25 |
| Cu | 13≤hm/λ≤25 |
| Mo | 15.5≤hm/λ≤25 |
| Au | 6.5≤hm/λ≤25 |
| W | 7.5≤hm/λ≤25 |
| Ta | 7≤hm/λ≤25 |
5th electrode layer 3a5 is made of Ti.5th electrode layer 3a5 is protective layer.By having the 5th electrode layer 3a5, from
And it can be improved the moisture-proof etc. of IDT electrode 3.
Present embodiment is characterized in that structure below.1) Eulerian angles of piezoelectric substrate 2 For Eulerian angles
(0 °, -90 °≤θ≤- 70 °, 0 °).2) type and film thickness hm/ λ (%) of the metal of above-mentioned first metal film of IDT electrode 3
For any combination shown in table 10.Thereby, it is possible to minimize acoustic wave device, and it is able to suppress useless wave.Below to this into
Row explanation.In addition, being illustrated in case where the first metal film is made of Pt.
Fig. 3 is the figure of the film thickness for showing the first metal film being made of Pt and the relationship of the velocity of sound.In Fig. 3, diamond shape is drawn
System point shows the velocity of sound, and square graphical pointv shows the ratio relative to the benchmark velocity of sound.In addition, the so-called base in the right axle of Fig. 3
The quasi- velocity of sound is the velocity of sound in the case that the film thickness of the first metal film is 3.5%.
As shown in Figure 3, it is known that the film thickness of the first metal film becomes thicker, and the velocity of sound more becomes low speed.Here, being set by the velocity of sound
For V and when frequency is set as f, V=f λ.When the frequency f of the elastic wave used in acoustic wave device is set as constant, if the
The film thickness of one metal film thickens and the value of velocity of sound V becomes smaller, then the value of wavelength X also becomes smaller.Thus, it is possible to reduce the electricity of IDT electrode
Pole refers to spacing.In the first embodiment, in the case where the first metal film is made of Pt, the film thickness of the first metal film is
6.5% or more, the velocity of sound becomes low speed.Therefore, electrode finger spacing can be reduced and minimizes IDT electrode, therefore can be by bullet
Property wave apparatus miniaturization.
For example, the previous film thickness as the first metal film, is set as 3.5% or so film thickness sometimes.As shown in figure 3, phase
Film of the ratio of the benchmark velocity of sound of the velocity of sound in the case where being 3.5% for the film thickness as the first metal film in the first metal film
It is 0.88 when thickness is 6.5%.Thus, compared with previous acoustic wave device, be able to carry out 12% or more it is significantly small-sized
Change.
In addition, in the first embodiment, the film thickness of the first metal film is 25% or less.Thereby, it is possible to improve productivity.
On the other hand, if the film thickness of the metal film in IDT electrode is thickened, the relative bandwidth of useless wave can become sometimes
Greatly.It is explained using the first comparative example.First comparative example and first embodiment the difference lies in that piezoelectric substrate
Eulerian anglesFor Eulerian angles (0 °, -10 °, 0 °).In following Fig. 4, show what the first metal film was made of Pt
In the case of the first comparative example result.
Fig. 4 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Pt in the first comparative example
The figure of relationship.In addition, useless wave shown in Fig. 4 is R wave.It is also same in the attached drawing after aftermentioned Fig. 5.
As shown in figure 4, in the first comparative example, if the film thickness of the first metal film becomes thicker than about 3.5%, useless wave
Relative bandwidth become larger.
In contrast, in the first embodiment, the Eulerian angles of piezoelectric substrateIt is (0 °, -90 ° of Eulerian angles
≤ θ≤- 70 °, 0 °).Thereby, it is possible to reduce the relative bandwidth of useless wave.In following Fig. 5, by by first embodiment
It is compared with the second comparative example, to be explained.Second comparative example and first embodiment the difference lies in that
In the case that first metal film is made of Pt, the film thickness of the first metal film is less than 6.5%.It is shown in fig. 5 the result is that by piezoelectricity base
The Eulerian angles of plateIt is set as the result in the case where Eulerian angles (0 °, -85 °, 0 °).In addition, making in following
It is also compared in the case that the film thickness of first dielectric film is different.
Fig. 5 is to show the situation for keeping the film thickness of the first dielectric film different in first embodiment and the second comparative example
Under, the figure of the relationship of the relative bandwidth of the film thickness of the first metal film and useless wave that is made of Pt.
In Fig. 5, the film thickness that the graphical pointv of the diamond shape of black shows the first dielectric film in the first embodiment is
Result in the case where 22.5%.The graphical pointv of the square of black shows the film of the first dielectric film in the first embodiment
Thickness is the result in the case where 27.5%.The graphical pointv of the triangle of black shows the first dielectric film in the first embodiment
Film thickness be 32.5% in the case where result.The rectangular graphical pointv of black shows the first electricity in the first embodiment and is situated between
The film thickness of plasma membrane is the result in the case where 37.5%.The circular graphical pointv of black shows the first electricity in the first embodiment
The film thickness of deielectric-coating is the result in the case where 42.5%.The graphical pointv of the diamond shape of white shows the first electricity in the second comparative example
The film thickness of deielectric-coating is the result in the case where 22.5%.The graphical pointv of the square of white shows in the second comparative example first
The film thickness of dielectric film is the result in the case where 27.5%.The graphical pointv of the triangle of white shows in the second comparative example the
The film thickness of one dielectric film is the result in the case where 32.5%.The rectangular graphical pointv of white is shown in the second comparative example
The film thickness of first dielectric film is the result in the case where 37.5%.The circular graphical pointv of white is shown in the second comparative example
The film thickness of first dielectric film is the result in the case where 42.5%.
As shown in Figure 5, it is known that in the second comparative example, even if keeping the film thickness of the first dielectric film different, the phase of useless wave
It is also big to bandwidth.In contrast, in the first embodiment, independently with the film thickness of the first dielectric film, can effectively subtract
The relative bandwidth of small useless wave.
But in the second comparative example, because the film thickness of the first metal film is thin, acoustic wave device it is significantly small-sized
Change is difficult.Similarly, the miniaturization of acoustic wave device is difficult first comparative example shown in Fig. 4.For example, with as scheming
The case where useless wave is repressed in the first comparative example as shown in 3, film thickness of the first metal film is 3.5% or so phase
Than being able to carry out 12% or more significantly miniaturization in the first embodiment.Like this, in the first embodiment, energy
It is enough to minimize acoustic wave device, and it is able to suppress useless wave.
Below to the first metal film in the first embodiment by one of Cu, Mo, Au, W and Ta other than Pt gold
Belong to the case where constituting to be illustrated.In addition, following each first comparative examples have other than the first metal film with it is shown in Fig. 4
The same structure of first comparative example.Following each second comparative examples have and shown in fig. 5 second other than the first metal film
The same structure of comparative example.
Fig. 6 is the figure of the film thickness for showing the first metal film being made of Cu and the relationship of the velocity of sound.The reference sound intensity of the right axle of Fig. 6
Speed be the first metal film film thickness be 5% when the velocity of sound.Fig. 7 is the film thickness and the velocity of sound for showing the first metal film being made of Mo
The figure of relationship.The benchmark velocity of sound of the right axle of Fig. 7 be the first metal film film thickness be 6% when the velocity of sound.Fig. 8 is to show to be made of Au
The first metal film film thickness and the velocity of sound relationship figure.The benchmark velocity of sound of the right axle of Fig. 8 is that the film thickness of the first metal film is
Velocity of sound when 3.5%.Fig. 9 is the figure of the film thickness for showing the first metal film being made of W and the relationship of the velocity of sound.The right axle of Fig. 9
The benchmark velocity of sound be the first metal film film thickness be 3.5% when the velocity of sound.Figure 10 is the film for showing the first metal film being made of Ta
The thick figure with the relationship of the velocity of sound.The benchmark velocity of sound of the right axle of Figure 10 be the first metal film film thickness be 4% when the velocity of sound.In Fig. 6
In~Figure 10, the graphical pointv of diamond shape shows the velocity of sound, and square graphical pointv shows the ratio relative to the benchmark velocity of sound.
As shown in Fig. 6~Figure 10, it is known that even if in the first metal film by one of Cu, Mo, Au, W and Ta metal structure
In the case where and the film thickness of the first metal film becomes thicker, and the velocity of sound more becomes low speed.Thus, with the first metal film by Pt
The case where composition, similarly the film thickness of the first metal film was thicker, can more become acoustic wave device small-sized.
Figure 11 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Cu in the first comparative example
Relationship figure.Figure 12 is to show to keep the film thickness of the first dielectric film different in first embodiment and the second comparative example
In the case of, the figure of the relationship of the relative bandwidth of the film thickness of the first metal film and useless wave that is made of Cu.
In Figure 12, the film thickness that the graphical pointv of the diamond shape of black shows the first dielectric film in the first embodiment is
Result in the case where 22.5%.The graphical pointv of the square of black shows the film of the first dielectric film in the first embodiment
Thickness is the result in the case where 42.5%.The graphical pointv of the triangle of black shows the first dielectric film in the first embodiment
Film thickness be 82.5% in the case where result.The graphical pointv of the diamond shape of white shows the first dielectric film in the second comparative example
Film thickness be 22.5% in the case where result.The graphical pointv of the square of white shows the first dielectric in the second comparative example
The film thickness of film is the result in the case where 42.5%.The graphical pointv of the triangle of white shows the first electricity in the second comparative example and is situated between
The film thickness of plasma membrane is the result in the case where 82.5%.It is also same in aftermentioned Figure 14, Figure 16, Figure 18 and Figure 20.
As shown in figure 11, in the first comparative example, if the film thickness of the first metal film becomes thicker than about 5%, useless wave
Relative bandwidth become larger.Therefore, in the first comparative example, it is difficult to take into account the miniaturization of acoustic wave device and the inhibition of useless wave.
In contrast, in the first embodiment, the film thickness of the first metal film is 13% or more, therefore can significantly be minimized.
In turn, as shown in figure 12, in the first embodiment, the relative bandwidth of useless wave can be reduced.On the other hand, exist
In second comparative example, in the case where reducing the relative bandwidth of useless wave, need to make the film thickness about 6% of the first metal film with
Under, it is difficult to acoustic wave device is minimized.Like this, in the first embodiment, even if being made of Cu in the first metal film
In the case of, acoustic wave device can also be minimized, and be able to suppress useless wave.
Figure 13 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Mo in the first comparative example
Relationship figure.Figure 14 is to show to keep the film thickness of the first dielectric film different in first embodiment and the second comparative example
In the case of, the figure of the relationship of the relative bandwidth of the film thickness of the first metal film and useless wave that is made of Mo.
As shown in figure 13, in the first comparative example, if the film thickness of the first metal film becomes thicker than about 6%, useless wave
Relative bandwidth become larger.Therefore, in the first comparative example, it is difficult to take into account the miniaturization of acoustic wave device and the inhibition of useless wave.
In contrast, in the first embodiment, the film thickness of the first metal film is 15.5% or more, therefore can significantly be minimized.
In turn, as shown in figure 14, in the first embodiment, the relative bandwidth of useless wave can be reduced.On the other hand, exist
In second comparative example, in the case where reducing the relative bandwidth of useless wave, need to make the film thickness about 5.5% of the first metal film
Below, it is difficult to minimize acoustic wave device.Like this, in the first embodiment, even if being made of in the first metal film Mo
In the case where, acoustic wave device can also be minimized, and be able to suppress useless wave.
Figure 15 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Au in the first comparative example
Relationship figure.Figure 16 is to show to keep the film thickness of the first dielectric film different in first embodiment and the second comparative example
In the case of, the figure of the relationship of the relative bandwidth of the film thickness of the first metal film and useless wave that is made of Au.
As shown in figure 15, in the first comparative example, useless if the film thickness of the first metal film becomes thicker than about 3.5%
The relative bandwidth of wave becomes larger.Therefore, in the first comparative example, it is difficult to take into account the miniaturization of acoustic wave device and the suppression of useless wave
System.In contrast, in the first embodiment, the film thickness of the first metal film is 6.5% or more, therefore can be significantly small-sized
Change.
In turn, as shown in figure 16, in the first embodiment, compared with the second comparative example, the phase of useless wave can be reduced
To bandwidth.It like this, in the first embodiment, also can will be elastic even if in the case where the first metal film is made of Au
Wave apparatus miniaturization, and it is able to suppress useless wave.
Figure 17 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of W in the first comparative example
The figure of relationship.Figure 18 is to show the feelings for keeping the film thickness of the first dielectric film different in first embodiment and the second comparative example
The figure of the relationship of the relative bandwidth of the film thickness and useless wave of first metal film under condition, being made of W.
As shown in figure 17, in the first comparative example, useless if the film thickness of the first metal film becomes thicker than about 3.5%
The relative bandwidth of wave becomes larger.Therefore, in the first comparative example, it is difficult to take into account the miniaturization of acoustic wave device and the suppression of useless wave
System.In contrast, in the first embodiment, the film thickness of the first metal film is 7.5% or more, therefore can be significantly small-sized
Change.
In turn, as shown in figure 18, in the first embodiment, compared with the second comparative example, the phase of useless wave can be reduced
To bandwidth.It like this, in the first embodiment, also can be by elastic wave even if in the case where the first metal film is made of W
Device miniaturization, and it is able to suppress useless wave.
Figure 19 is the relative bandwidth for showing the film thickness and useless wave of the first metal film being made of Ta in the first comparative example
Relationship figure.Figure 20 is to show to keep the film thickness of the first dielectric film different in first embodiment and the second comparative example
In the case of, the figure of the relationship of the relative bandwidth of the film thickness of the first metal film and useless wave that is made of Ta.
As shown in figure 19, in the first comparative example, if the film thickness of the first metal film becomes thicker than about 4%, useless wave
Relative bandwidth become larger.Therefore, in the first comparative example, it is difficult to take into account the miniaturization of acoustic wave device and the inhibition of useless wave.
In contrast, in the first embodiment, the film thickness of the first metal film is 7% or more, therefore can significantly be minimized.
In turn, as shown in figure 20, in the first embodiment, compared with the second comparative example, the phase of useless wave can be reduced
To bandwidth.It like this, in the first embodiment, also can will be elastic even if in the case where the first metal film is made of Ta
Wave apparatus miniaturization, and it is able to suppress useless wave.
As above, in the first embodiment, even if the first metal film by other than Pt Cu, Mo, Au, W and
In the case that one of Ta metal is constituted, also in the same manner as the case where the first metal film is made of Pt, elastic wave can be filled
Miniaturization is set, and is able to suppress useless wave.
In turn, even if the case where the first metal film is made of one of Cu, Mo, Au, W and Ta other than Pt metal
Under, because the film thickness of the first metal film is 25% hereinafter, also can be improved productivity.
In addition, even if piezoelectric substrate Eulerian anglesThe case where for Eulerian angles (0 ° ± 5 °, θ, 0 ° ± 5 °)
Under, it can also obtain effect similar to the above.In the present specification, so-called 0 ° ± 5 °, expression is in the range of 0 ° ± 5 °.
Figure 21 is the front sectional view for the acoustic wave device that the variation of first embodiment is related to.
In the acoustic wave device of the variation of first embodiment, it is provided between piezoelectric substrate 2 and IDT electrode 3
The intermediate coat 16 being made of dielectric.In this variation, the film thickness of intermediate coat 16 is 10nm.In addition, the film thickness of intermediate coat 16
It is not limited to above-mentioned film thickness.
Figure 22 is the first metal film being made of Pt shown in the variation and the second comparative example of first embodiment
Film thickness and useless wave relative bandwidth relationship figure.In Figure 22, the graphical pointv of the diamond shape of black shows the first embodiment party
The variation of formula as a result, the graphical pointv of the diamond shape of white shows the result of the second comparative example.
As shown in figure 22, in the variation of first embodiment, also it is able to suppress useless wave.In this variation, lead to
It crosses with intermediate coat 16, so as to adjust electromechanical coupling factor while inhibiting useless wave.Elasticity can also be adjusted as a result,
The relative bandwidth of wave apparatus.
Here, in IDT electrode 3, it, will be with 2 side opposite side of piezoelectric substrate as upper using 2 side of piezoelectric substrate as lower layer
Layer.Back to Fig. 2, as first embodiment, the 4th electrode layer 3a4 as the first metal film is preferably layered in than conduct
The first electrode layer 3a1 of above-mentioned second metal film leans on upper layer.Thereby, it is possible to further reduce the film thickness of the first dielectric film 4
Influence to the relative bandwidth of useless wave.
Hereinafter, being illustrated to second embodiment of the present invention.
The difference of acoustic wave device and first embodiment that second embodiment is related to is, the Eulerian angles of piezoelectric substrateThe group of the film thickness of the type and film thickness and the first dielectric film of the metal of the first metal film in IDT electrode
It closes.Other than above-mentioned aspect, the acoustic wave device of second embodiment has the bullet with first embodiment shown in FIG. 1
The property same structure of wave apparatus 1.
More specifically, in the present embodiment, the Eulerian angles of piezoelectric substrateFor Eulerian angles (0 °, -90 °≤
θ≤- 27.5 °, 0 °).First metal film of IDT electrode is made of one of Pt, Cu and Mo metal.
Here, the film thickness for having carried out normalized first dielectric film by wavelength X is set as hs/ λ (%).At this point, the
The Europe of the type and film thickness hm/ λ (%) of the metal of one metal film, film thickness hs/ λ (%) and piezoelectric substrate of the-dielectric film
Draw angleIn θ be following 11~tables of table 18 shown in any combination.
In above-mentioned first embodiment, influence of the first dielectric film thickness to the relative bandwidth of useless wave is small.?
In present embodiment, the film thickness of the first metal film and the Eulerian angles of piezoelectric substrate Including in first embodiment
Range other than range, the film thickness of the first dielectric film is set as to the range of following 11~tables of table 18.Thereby, it is possible to by bullet
Property wave apparatus miniaturization, and can reduce useless wave.
[table 11]
[table 12]
[table 13]
[table 14]
[table 15]
[table 16]
[table 17]
[table 18]
As shown in Fig. 3, Fig. 6 and Fig. 7, the film thickness of the first metal film becomes thicker, and the velocity of sound more becomes low speed.In this implementation
In mode, because the film thickness of the first metal film is the range of 11~table of table 18, in the same manner as first embodiment, it can incite somebody to action
Acoustic wave device further minimizes.
Useless wave can be effectively reduced in the present embodiment by being specifically illustrated in by following Figure 23~Figure 57.
Figure 23 is the film for showing the first metal film when the film thickness hs/ λ of the first dielectric film is 22.5%, being made of Pt
The figure of the relationship of the relative bandwidth of θ and useless wave in thick and Eulerian angles (0 °, θ, 0 °).Similarly, Figure 24~Figure 31 is to show
The film thickness of first metal film when the film thickness hs/ λ of the first dielectric film is 27.5%~62.5% out, being made of Pt and Europe
Draw the figure of the relationship of the relative bandwidth of the θ and useless wave in angle (0 °, θ, 0 °).
As shown in Figure 23~Figure 31, in the present embodiment, in the case where the first metal film is made of Pt, nothing can be made
It is 0.1% or less with the relative bandwidth of wave.Like this, useless wave can be effectively inhibited.
Figure 32 is the film for showing the first metal film when the film thickness hs/ λ of the first dielectric film is 32.5%, being made of Cu
The figure of the relationship of the relative bandwidth of θ and useless wave in thick and Eulerian angles (0 °, θ, 0 °).Similarly, Figure 33~Figure 44 is to show
The film thickness of first metal film when the film thickness hs/ λ of the first dielectric film is 37.5%~92.5% out, being made of Cu and Europe
Draw the figure of the relationship of the relative bandwidth of the θ and useless wave in angle (0 °, θ, 0 °).
As shown in Figure 32~Figure 44, in the present embodiment, even if also can in the case where the first metal film is made of Cu
Enough make 0.1% or less the relative bandwidth of useless wave.Like this, useless wave can be effectively inhibited.
Figure 45 be show the film thickness of the first metal film when the film thickness of the first dielectric film is 32.5%, being made of Mo with
And the figure of the relationship of the relative bandwidth of the θ in Eulerian angles (0 °, θ, 0 °) and useless wave.Similarly, Figure 46~Figure 57 is to show
The film thickness and Eulerian angles of first metal film when the film thickness hs/ λ of one dielectric film is 37.5%~92.5%, being made of Mo
The figure of the relationship of the relative bandwidth of θ and useless wave in (0 °, θ, 0 °).
As shown in Figure 45~Figure 57, in the present embodiment, even if also can in the case where the first metal film is made of Mo
Enough make 0.1% or less the relative bandwidth of useless wave.Like this, useless wave can be effectively inhibited.
In addition, even if piezoelectric substrate Eulerian anglesThe case where for Eulerian angles (0 ° ± 5 °, θ, 0 ° ± 5 °)
Under, it can also obtain effect similar to the above.
Description of symbols
1: acoustic wave device；
2: piezoelectric substrate；
3:IDT electrode；
3a: electrode finger；
3a1~3a5: first electrode layer~the 5th electrode layer；
4,5: the first dielectric films, the second dielectric film；
16: intermediate coat.
Claims (6)
1. a kind of acoustic wave device, has:
Piezoelectric substrate, by LiNbO3It constitutes；
IDT electrode is arranged on the piezoelectric substrate；And
First dielectric film is arranged on the piezoelectric substrate, so that covering the IDT electrode, and is made of silica,
The IDT electrode has the first metal film being made of one of Pt, Cu, Mo, Au, W and Ta metal,
The Eulerian angles of the piezoelectric substrateFor Eulerian angles (0 ° ± 5 °, -90 °≤θ≤- 70 °, 0 ° ± 5 °),
Wavelength as defined in electrode finger spacing as the IDT electrode is set as λ, will have been carried out by the wavelength X normalized
The film thickness of first metal film is set as hm/ λ, wherein the unit of the film thickness hm/ λ is %, at this point, first metal film
Metal and the film thickness hm/ λ be following tables 1 shown in any combination,
[table 1]
。
2. a kind of acoustic wave device, has:
Piezoelectric substrate, by LiNbO3It constitutes；
IDT electrode is arranged on the piezoelectric substrate；And
First dielectric film is arranged on the piezoelectric substrate, so that covering the IDT electrode, and is made of silica,
The IDT electrode has the first metal film being made of one of Pt, Cu and Mo metal,
The Eulerian angles of the piezoelectric substrateFor Eulerian angles (0 ° ± 5 °, -90 °≤θ≤- 27.5 °, 0 ° ± 5 °),
Wavelength as defined in electrode finger spacing as the IDT electrode is set as λ, will have been carried out by the wavelength X normalized
The film thickness of first metal film is set as hm/ λ, will carry out normalized first dielectric film by the wavelength X
Film thickness is set as hs/ λ, wherein the unit of the film thickness hm/ λ and the film thickness hs/ λ are %, at this point, first metal film
Metal, film thickness hm/ λ, the film thickness hs/ λ and the piezoelectric substrate Eulerian anglesIn θ be under
Any combination shown in the 2~table of table 9 stated,
[table 2]
[table 3]
[table 4]
[table 5]
[table 6]
[table 7]
[table 8]
[table 9]
3. acoustic wave device according to claim 1, wherein
The intermediate coat being made of dielectric is provided between the piezoelectric substrate and the IDT electrode.
4. acoustic wave device according to claim 1 or 3, wherein
The second metal film that the IDT electrode has conductivity higher than first metal film,
In the IDT electrode, using the piezoelectric substrate side as lower layer and will with piezoelectric substrate side opposite side as
When upper layer, first metallic diaphragm is stacked in than second metal film by upper layer.
5. acoustic wave device described according to claim 1~any one of 4, wherein
The second dielectric film is provided on first dielectric film.
6. acoustic wave device according to claims 1 to 5, wherein
SH wave is utilized.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090115287A1 (en) * | 2005-04-25 | 2009-05-07 | Murata Manufacturing Co., Ltd. | Boundary acoustic wave device |
| US20110199168A1 (en) * | 2008-11-18 | 2011-08-18 | Murata Manufacturing Co., Ltd. | Tunable filter |
| US20160268997A1 (en) * | 2015-03-12 | 2016-09-15 | Skyworks Panasonic Filter Solutions Japan Co., Ltd | Acoustic wave elements, antenna duplexers and electronic devices |
Family Cites Families (8)
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| JP4297139B2 (en) | 2003-10-03 | 2009-07-15 | 株式会社村田製作所 | Surface acoustic wave device |
| JP4998032B2 (en) * | 2007-03-23 | 2012-08-15 | 株式会社村田製作所 | Boundary acoustic wave device |
| JPWO2009090715A1 (en) | 2008-01-17 | 2011-05-26 | 株式会社村田製作所 | Surface acoustic wave device |
| WO2009090713A1 (en) * | 2008-01-17 | 2009-07-23 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
| JP5332506B2 (en) * | 2008-10-28 | 2013-11-06 | 株式会社村田製作所 | Ladder type filter and duplexer having the same |
| CN102204094B (en) | 2008-11-10 | 2014-01-15 | 松下电器产业株式会社 | Elastic wave element and electronic device using the same |
| JP5716050B2 (en) * | 2013-03-27 | 2015-05-13 | スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 | Elastic wave element |
| CN105612693A (en) * | 2013-10-09 | 2016-05-25 | 天工松下滤波方案日本有限公司 | Elastic wave element, duplexer including same, and electronic appliance |
-
2017
- 2017-10-10 WO PCT/JP2017/036681 patent/WO2018092470A1/en active Application Filing
- 2017-10-10 CN CN201780071170.0A patent/CN110036564B/en active Active
- 2017-10-10 KR KR1020197013734A patent/KR102217820B1/en active IP Right Grant
- 2017-10-10 JP JP2018551077A patent/JPWO2018092470A1/en active Pending
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2019
- 2019-05-01 US US16/400,051 patent/US11595023B2/en active Active
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2020
- 2020-05-27 JP JP2020092012A patent/JP7042866B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090115287A1 (en) * | 2005-04-25 | 2009-05-07 | Murata Manufacturing Co., Ltd. | Boundary acoustic wave device |
| US20110199168A1 (en) * | 2008-11-18 | 2011-08-18 | Murata Manufacturing Co., Ltd. | Tunable filter |
| US20160268997A1 (en) * | 2015-03-12 | 2016-09-15 | Skyworks Panasonic Filter Solutions Japan Co., Ltd | Acoustic wave elements, antenna duplexers and electronic devices |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018092470A1 (en) | 2018-05-24 |
| JP2020145737A (en) | 2020-09-10 |
| CN110036564B (en) | 2023-04-18 |
| JP7042866B2 (en) | 2022-03-28 |
| JPWO2018092470A1 (en) | 2019-06-24 |
| US11595023B2 (en) | 2023-02-28 |
| US20190260353A1 (en) | 2019-08-22 |
| KR102217820B1 (en) | 2021-02-18 |
| KR20190065406A (en) | 2019-06-11 |
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