CN102983833A - Acoustic surface wave filter - Google Patents
Acoustic surface wave filter Download PDFInfo
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- CN102983833A CN102983833A CN2012104736034A CN201210473603A CN102983833A CN 102983833 A CN102983833 A CN 102983833A CN 2012104736034 A CN2012104736034 A CN 2012104736034A CN 201210473603 A CN201210473603 A CN 201210473603A CN 102983833 A CN102983833 A CN 102983833A
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- wave filter
- interdigital transducer
- atomic percentage
- acoustic wave
- piezoelectric film
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Abstract
The invention discloses a low loss filter and specifically relates to an acoustic surface wave filter which comprises a substrate, a piezoelectric film, an input interdigital transducer and an output interdigital transducer. The piezoelectric film is deposited on the substrate, the input interdigital transducer and the output interdigital transducer are located on the piezoelectric film, and the piezoelectric film is a ZnO piezoelectric film doped with Ti, Nb and Mn, wherein the atomic percentage of the Ti is 3.5-5.5%, the atomic percentage of the Nb is 2.5-6.0%, and the atomic percentage of the Mn is 2.0-4.5%. The acoustic surface wave filter is a high frequency filter which can be used in mass industrialization and is high in electromechanical coupling factors, low in insertion loss and high in work efficiencies.
Description
Technical field
The present invention relates to a kind of filter.
Background technology
Surface Acoustic Wave Filter is to adopt the piezoelectrics such as quartz crystal, piezoelectric ceramic, utilizes the physical characteristic of its piezoelectric effect and acoustic surface wave propagation and a kind of filtering dedicated devices of making.So-called piezoelectric effect namely is when crystal is subject to mechanism, will produce the phenomenon of the electric field that is directly proportional with pressure.Crystal with piezoelectric effect in the time spent of doing that is subject to the signal of telecommunication, also can produce elastic deformation and sends sound wave, can transfer the signal of telecommunication to acoustical signal.Because this sound wave is only propagated at plane of crystal, so be called surface acoustic wave.
Surface Acoustic Wave Filter has that volume is little, lightweight, dependable performance, do not need complicated the adjustment.It comprises acoustic surface wave TV vision intermediate frequency filter, television field frame filter, television channel vestigial sideband filter.Be widely used in television set and the video tape recorder intermediate-frequency circuit, to replace the LC intermediate-frequency filter, the quality of image, sound improved greatly.
In recent years, the high speed development of communication need to be subjected to the up till now restriction of available frequency resources deficiency, so that practical communication develops to higher frequency.As FREQUENCY CONTROL element-Surface Acoustic Wave Filter commonly used in the mobile communication, its development trend also must be high frequency filter.But the prior art at the top of one's voice insertion loss of surface wave filter part is generally all larger, and along with the frequency of utilization of SAW (Surface Acoustic Wave) device improves constantly, the problem of its insertion loss is more and more obvious.Therefore how reducing the loss of filter, improve its operating efficiency, is the problem that those skilled in the art need solution badly.
Summary of the invention
The invention discloses a kind of Surface Acoustic Wave Filter, its electromechanical coupling factor is high, and insertion loss is low, and high efficiency is the high frequency filter that a kind of in a large number industrialization is used.
Surface Acoustic Wave Filter of the present invention comprises substrate, be deposited on piezoelectric membrane on the described substrate, be positioned at input interdigital transducer and output interdigital transducer on the described piezoelectric membrane, wherein said piezoelectric membrane is the ZnO piezoelectric film of doped Ti, Nb and Mn, wherein, the atomic percentage of Ti is 3.5～5.5%, the atomic percentage of Nb is that the atomic percentage of 2.5～6%, Mn is 2～4.5%.
Preferably, the thickness of described piezoelectric membrane is 200nm～400nm, is preferably 250～350nm;
Preferably, the piezoelectric constant of described piezoelectric membrane is 110pC/N～200pC/N, is preferably 110pC/N, 120pC/N or 200pC/N;
Preferably, described piezoelectric membrane earth resistivity is 10
7Ω cm～10
14Ω cm is preferably 10
10Ω cm or 10
11Ω cm.
Preferably, described substrate is diamond, sapphire or carborundum.
Preferably, described ZnO piezoelectric film deposits by physical vapour deposition (PVD), chemical vapour deposition (CVD), sol-gel or electrochemical method; Described input interdigital transducer and output interdigital transducer can be prepared by electron-beam direct writing technique.
Embodiment
In order to make those skilled in the art more clearly understand Surface Acoustic Wave Filter of the present invention, describe its technical scheme in detail below by embodiment.
Surface Acoustic Wave Filter of the present invention comprises substrate, be deposited on piezoelectric membrane on the described substrate, be positioned at input interdigital transducer and output interdigital transducer on the described piezoelectric membrane, wherein said piezoelectric membrane is for being the ZnO piezoelectric film of doped Ti, Nb and Mn, wherein, the atomic percentage of Ti is 3.5～5.5%, preferred 4.0～5.0%; The atomic percentage of Nb is 2.5～6.0%, and is preferred 3.0～5.0%, and the atomic percentage of Mn is 2～4.5%, preferred 3.0～4.0%.
Preferably, the thickness of described piezoelectric membrane is 200nm～400nm, is preferably 250～350nm;
Preferably, the piezoelectric constant of described piezoelectric membrane is 150pC/N～260pC/N;
Preferably, described piezoelectric membrane earth resistivity is 10
7Ω cm～10
12Ω cm.
Preferably, described substrate is diamond, sapphire or carborundum.
Preferably, described ZnO piezoelectric film deposits by physical vapour deposition (PVD), chemical vapour deposition (CVD), sol-gel or electrochemical method; Described input interdigital transducer and output interdigital transducer can be prepared by electron-beam direct writing technique.
The below describes the embodiment of the manufacture method of Surface Acoustic Wave Filter of the present invention in detail
Embodiment 1
Adopt physical vaporous deposition to prepare the ZnO piezoelectric film of Ti, Nb and Mn doping at the diamond substrate material, wherein, the atomic percentage of Ti is 4%; The atomic percentage of Nb is that the atomic percentage of 3%, Mn is 3%, the piezoelectric constant d of the ZnO piezoelectric film of the doping that makes
33Be 150pC/N, the electricalresistivityρ is 10
9Ω cm, thickness are 250nm; Adopting electron-beam direct writing technique to make width at the above-mentioned doping ZnO piezoelectric membrane that makes is input interdigital transducer and the output interdigital transducer of 600nm, obtains Surface Acoustic Wave Filter.
The frequency of the Surface Acoustic Wave Filter of above-mentioned preparation is 8GHz, and electromechanical coupling factor up to 4.3% and insertion loss be 13dB.
Embodiment 2
Adopt chemical vapour deposition technique to prepare the ZnO piezoelectric film of Ti, Nb and Mn doping at the diamond like carbon backing material, the atomic percentage of Ti is 4.5%; The atomic percentage of Nb is that the atomic percentage of 5%, Mn is 4.5%, and the piezoelectric constant of the ZnO piezoelectric film that makes is d
33Be 190pC/N, resistivity is that ρ is 10
10Ω cm, thickness are 350nm; Adopting electron-beam direct writing technique to make width at the above-mentioned doping ZnO piezoelectric membrane that makes is input interdigital transducer and the output interdigital transducer of 500nm, obtains Surface Acoustic Wave Filter.
The frequency of the Surface Acoustic Wave Filter of above-mentioned preparation is 9GHz, and electromechanical coupling factor up to 6.6% and insertion loss be 11dB.
Embodiment 3
Adopt sol-gel process to prepare the ZnO piezoelectric film of Ti, Nb and Mn doping at saphire substrate material, the atomic percentage of Ti is 2.5%; The atomic percentage of Nb is that the atomic percentage of 4.6%, Mn is 3.8%, and the piezoelectric constant of the ZnO piezoelectric film of the doping that makes is d
33Be 240pC/N, resistivity is that ρ is 10
8Ω cm, thickness are 300nm; Adopting electron-beam direct writing technique to make width at the above-mentioned doping ZnO piezoelectric membrane that makes is input interdigital transducer and the output interdigital transducer of 300nm, obtains Surface Acoustic Wave Filter.
The frequency of the Surface Acoustic Wave Filter of above-mentioned preparation is 11GHz, and electromechanical coupling factor up to 6.2% and insertion loss be 7dB.
The beneficial effect that the present invention has is: adopt the novel ZnO piezoelectric film that mixes, has large piezoelectric response and high resistivity, interdigital transducer can carry out efficient power conversion, can significantly improve filter operating efficiency and coupling coefficient, reduce insertion loss, comparing the filter electromechanical coupling factor that ZnO piezoelectric film that pure ZnO piezoelectric film or V doping ZnO piezoelectric membrane or Cr mix makes increases by 20%, and loss reduces by 15%.
Certainly; the present invention also can have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (5)
1. Surface Acoustic Wave Filter, comprise substrate, be deposited on piezoelectric membrane on the described substrate, be positioned at input interdigital transducer and output interdigital transducer on the described piezoelectric membrane, it is characterized in that, described piezoelectric membrane is the ZnO piezoelectric film of doped Ti, Nb and Mn, wherein, the atomic percentage of Ti is that the atomic percentage of 0.5～3.5%, Nb is that the atomic percentage of 2.5～6.0%, Mn is 2.0～4.5%.
2. Surface Acoustic Wave Filter as claimed in claim 1 is characterized in that, the thickness of described piezoelectric membrane is 250nm～350nm.
3. Surface Acoustic Wave Filter as claimed in claim 1 is characterized in that, the piezoelectric constant of described piezoelectric membrane is 150pC/N～260pC/N.
4. Surface Acoustic Wave Filter as claimed in claim 1 is characterized in that, described piezoelectric membrane earth resistivity is 10
7～10
12Ω cm.
5. Surface Acoustic Wave Filter as claimed in claim 1 is characterized in that, described substrate is diamond, sapphire or carborundum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104736034A CN102983833A (en) | 2012-11-20 | 2012-11-20 | Acoustic surface wave filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104736034A CN102983833A (en) | 2012-11-20 | 2012-11-20 | Acoustic surface wave filter |
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| CN102983833A true CN102983833A (en) | 2013-03-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055017A (en) * | 2018-02-11 | 2018-05-18 | 海宁市瑞宏科技有限公司 | A kind of resonator structure for ultra-wide band SAW filter design |
| CN111095794A (en) * | 2017-09-22 | 2020-05-01 | 华为技术有限公司 | Surface acoustic wave device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101384756A (en) * | 2006-03-01 | 2009-03-11 | 三菱瓦斯化学株式会社 | Process for producing zno single crystal according to method of liquid phase growth |
| US20100320874A1 (en) * | 2009-06-22 | 2010-12-23 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and piezoelectric thin film device |
| CN102386885A (en) * | 2011-06-20 | 2012-03-21 | 清华大学 | Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof |
-
2012
- 2012-11-20 CN CN2012104736034A patent/CN102983833A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101384756A (en) * | 2006-03-01 | 2009-03-11 | 三菱瓦斯化学株式会社 | Process for producing zno single crystal according to method of liquid phase growth |
| US20100320874A1 (en) * | 2009-06-22 | 2010-12-23 | Hitachi Cable, Ltd. | Piezoelectric thin film element, and piezoelectric thin film device |
| CN102386885A (en) * | 2011-06-20 | 2012-03-21 | 清华大学 | Surface acoustic wave filter with high mechanical coupling factor and low insertion loss and special piezoelectric film thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111095794A (en) * | 2017-09-22 | 2020-05-01 | 华为技术有限公司 | Surface acoustic wave device |
| CN108055017A (en) * | 2018-02-11 | 2018-05-18 | 海宁市瑞宏科技有限公司 | A kind of resonator structure for ultra-wide band SAW filter design |
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Application publication date: 20130320 |