CN110021675B - Solar cell, preparation method thereof and electric equipment - Google Patents
Solar cell, preparation method thereof and electric equipment Download PDFInfo
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- CN110021675B CN110021675B CN201910308050.9A CN201910308050A CN110021675B CN 110021675 B CN110021675 B CN 110021675B CN 201910308050 A CN201910308050 A CN 201910308050A CN 110021675 B CN110021675 B CN 110021675B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 268
- 239000011241 protective layer Substances 0.000 claims abstract description 149
- 238000006243 chemical reaction Methods 0.000 claims abstract description 123
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 19
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- -1 polydimethylsiloxane Polymers 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 231100000252 nontoxic Toxicity 0.000 claims description 2
- 230000003000 nontoxic effect Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000009967 tasteless effect Effects 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 12
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910018557 Si O Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910007156 Si(OH)4 Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar cell, a preparation method thereof and electric equipment are provided, wherein the solar cell comprises: a photoelectric conversion layer, a first protective layer, and a second protective layer; the first protective layer is located on the light incident side of the photoelectric conversion layer, the second protective layer is located on the side, opposite to the light incident side, of the light ray conversion layer, and the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer. According to the technical scheme, the photoelectric conversion layer is packaged through the first protective layer and the second protective layer, and the mechanical toughness and the service life of the solar cell are improved.
Description
Technical Field
The invention relates to the technical field of batteries, in particular to a solar battery, a preparation method thereof and electric equipment.
Background
As the demand for energy increases, conventional energy reserves are limited and non-renewable, and therefore, development of renewable energy sources, particularly solar energy, is receiving more and more attention, and research and development of solar cell modules (also called photovoltaic modules) using solar energy are becoming more and more extensive.
The inventor researches and finds that the solar cell in the related art has poor mechanical toughness, so that the service life of the solar cell is short.
Disclosure of Invention
The application provides a solar cell, a preparation method thereof and electric equipment, which can improve the mechanical toughness and prolong the service life of the solar cell.
In a first aspect, the present application provides a solar cell comprising: a photoelectric conversion layer, a first protective layer, and a second protective layer;
the first protective layer is located on the light incident side of the photoelectric conversion layer, the second protective layer is located on the side, opposite to the light incident side, of the light conversion layer, and the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer.
Optionally, the first protective layer and the second protective layer are made of insulating flexible transparent materials.
Optionally, the solar cell further comprises: a first electrode and a second electrode;
the first electrode is positioned on one side of the photoelectric conversion layer close to the first protective layer, and the second electrode is positioned on one side of the photoelectric conversion layer close to the second protective layer.
Optionally, the solar cell further comprises: a reflection reducing layer for reducing reflection of light rays incident on the photoelectric conversion layer;
the antireflection layer is positioned on one side of the first electrode close to the first protective layer, and the refractive index of the antireflection layer is larger than that of the first protective layer and smaller than that of the photoelectric conversion layer.
Optionally, the material of the first electrode includes: the first electrode is made of transparent conductive materials or metals, and the thickness of the first electrode is 50-300 nanometers;
when the first electrode is made of metal, the first electrode is a strip electrode or a mesh electrode.
Optionally, the solar cell further comprises: conductive particles doped in the first protective layer;
the conductive particles include: silver, nickel, carbon black, carbon nanotubes, or graphite.
Optionally, the solar cell further comprises: a second electrode;
the second electrode is positioned on one side of the photoelectric conversion layer close to the second protective layer.
Optionally, the refractive index of the first protective layer is greater than the refractive index of air and smaller than the refractive index of the light ray conversion layer.
Optionally, the second battery is made of a material including: transparent conducting material or metal, the thickness of second electrode is 70 ~ 300 nanometers.
Optionally, the solar cell further comprises: a reflective layer for reflecting light emitted from the photoelectric conversion layer;
the reflecting layer is positioned on one side of the second electrode close to the second protective layer.
Optionally, the photoelectric conversion layer includes: a first semiconductor layer and a second semiconductor layer;
the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, or the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer.
In a second aspect, an embodiment of the present application further provides an electrical device, including: the solar cell is provided.
In a third aspect, an embodiment of the present application further provides a method for manufacturing a solar cell, where the method is used to manufacture the solar cell, and the method includes:
forming a photoelectric conversion layer;
forming a first protective layer on the light incident side of the photoelectric conversion layer;
and forming a second protective layer on the side opposite to the light incident side of the photoelectric conversion layer, wherein the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer.
Optionally, after the forming the photoelectric conversion layer, the method further includes:
sequentially forming a first electrode and an antireflection layer on the light incident side of the photoelectric conversion layer;
after the first protective layer is formed on the light incident side of the photoelectric conversion layer, the method further comprises the following steps:
and forming a second electrode on the side opposite to the light incident side of the photoelectric conversion layer.
Optionally, when a material for manufacturing the photoelectric conversion layer is a single crystal silicon thin film, and a material for manufacturing the first protective layer and the second protective layer is polydimethylsiloxane, the forming the photoelectric conversion layer includes: doping a first semiconductor material and a second semiconductor material in sequence in a monocrystalline silicon thin film of an SOI substrate to form a photoelectric conversion layer comprising a first semiconductor layer and a second semiconductor layer; the SOI substrate includes: the monocrystalline silicon substrate, the insulating layer and the monocrystalline silicon thin film are arranged in sequence;
the forming of the first electrode and the antireflection layer in order on the light incident side of the photoelectric conversion layer includes: thermally oxidizing a surface of the second semiconductor layer; sequentially forming a first electrode and an anti-reflection layer on the thermally oxidized second semiconductor layer;
the forming of the first protective layer on the light incident side of the photoelectric conversion layer includes: carrying out plasma treatment on the antireflection layer and the first protection material, and attaching the first protection material subjected to the plasma treatment to the antireflection layer subjected to the plasma treatment to form a first protection layer;
the forming of the second electrode on the side opposite to the light incident side of the photoelectric conversion layer includes: etching the insulating layer and the monocrystalline silicon substrate by adopting a wet etching process, and forming a second electrode on one side of the first semiconductor layer, which is far away from the second semiconductor layer;
the forming of the second protective layer on the side opposite to the light incident side of the photoelectric conversion layer includes: and carrying out plasma treatment on the second protective material, and attaching the second protective material subjected to the plasma treatment to one side of the second electrode, which is far away from the first semiconductor layer, so as to form a second protective layer.
The embodiment of the application provides a solar cell, a preparation method thereof and electric equipment, wherein the solar cell comprises: a photoelectric conversion layer, a first protective layer, and a second protective layer; the first protective layer is located on the light incident side of the photoelectric conversion layer, the second protective layer is located on the side, opposite to the light incident side, of the light ray conversion layer, and the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer. The application provides a technical scheme through first protective layer and second protection encapsulation photoelectric conversion layer, makes solar cell when strong external force pulls out, can play the effect of buffering stress, has improved solar cell's mechanical toughness and life.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application. Other advantages of the application may be realized and attained by the instrumentalities and combinations particularly pointed out in the specification, claims, and drawings.
Drawings
The accompanying drawings are included to provide an understanding of the present disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the examples serve to explain the principles of the disclosure and not to limit the disclosure.
Fig. 1 is a first schematic structural diagram of a solar cell according to an embodiment of the present disclosure;
fig. 2A is a first schematic structural diagram of a first electrode according to an embodiment of the present disclosure;
fig. 2B is a schematic structural diagram of a first electrode according to an embodiment of the present disclosure;
fig. 2C is a schematic structural diagram of a first electrode provided in the present embodiment;
fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a solar cell provided in the embodiment of the present application;
fig. 5 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6A is a first schematic view illustrating a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6B is a schematic view illustrating a second method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6C is a schematic view illustrating a third method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6D is a fourth schematic view of a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6E is a schematic diagram of a fifth method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6F is a schematic diagram six illustrating a method for manufacturing a solar cell according to an embodiment of the present disclosure;
fig. 6G is a schematic diagram seven illustrating a method for manufacturing a solar cell according to an embodiment of the present application.
Detailed Description
The present application describes embodiments, but the description is illustrative rather than limiting and it will be apparent to those of ordinary skill in the art that many more embodiments and implementations are possible within the scope of the embodiments described herein. Although many possible combinations of features are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are possible. Any feature or element of any embodiment may be used in combination with or instead of any other feature or element in any other embodiment, unless expressly limited otherwise.
The present application includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features and elements disclosed in this application may also be combined with any conventional features or elements to form a unique inventive concept as defined by the claims. Any feature or element of any embodiment may also be combined with features or elements from other inventive aspects to form yet another unique inventive aspect, as defined by the claims. Thus, it should be understood that any of the features shown and/or discussed in this application may be implemented alone or in any suitable combination. Accordingly, the embodiments are not limited except as by the appended claims and their equivalents. Furthermore, various modifications and changes may be made within the scope of the appended claims.
Further, in describing representative embodiments, the specification may have presented the method and/or process as a particular sequence of steps. However, to the extent that the method or process does not rely on the particular order of steps set forth herein, the method or process should not be limited to the particular sequence of steps described. Other orders of steps are possible as will be understood by those of ordinary skill in the art. Therefore, the particular order of the steps set forth in the specification should not be construed as limitations on the claims. Further, the claims directed to the method and/or process should not be limited to the performance of their steps in the order written, and one skilled in the art can readily appreciate that the sequences may be varied and still remain within the spirit and scope of the embodiments of the present application.
Unless defined otherwise, technical or scientific terms used in the disclosure of the embodiments of the present invention should have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. The use of "first," "second," and similar language in the embodiments of the present invention does not denote any order, quantity, or importance, but rather the terms "first," "second," and similar language are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Example one
An embodiment of the present application provides a solar cell, and fig. 1 is a schematic structural diagram of the solar cell provided in the embodiment of the present application, and as shown in fig. 1, the solar cell provided in the embodiment of the present application includes: the photoelectric conversion layer 10, the first protective layer 20 and the second protective layer 30, wherein the first protective layer 20 is located on the light incident side of the photoelectric conversion layer 10, the second protective layer 30 is located on the side opposite to the light incident side of the photoelectric conversion layer 10, and the first protective layer 20 and the second protective layer 30 are used for encapsulating the photoelectric conversion layer 10.
In the present embodiment, the orthographic projection of the first protective layer 20 on the second protective layer 30 covers the orthographic projection of the photoelectric conversion layer 20 on the second protective layer 30, and the orthographic projection of the second protective layer 30 on the first protective layer 20 covers the orthographic projection of the photoelectric conversion layer 20 on the first protective layer 20.
As shown in fig. 1, the photoelectric conversion layer 10 in the present embodiment includes: a first semiconductor layer 11 and a second semiconductor layer 12, wherein the first semiconductor layer 11 is located on the side of the second semiconductor layer 12 close to the first protective layer 20.
Optionally, the first semiconductor layer 11 is a P-type semiconductor layer and the second semiconductor layer 12 is an N-type semiconductor layer, or the first semiconductor layer 11 is an N-type semiconductor layer and the second semiconductor layer 12 is a P-type semiconductor layer. The embodiment of the present application is not limited to this.
In this embodiment, the photoelectric conversion layer 10 is used for absorbing and converting light rays incident on the photoelectric conversion layer 10, and specifically, the photoelectric conversion layer absorbs photons with certain energy and excites unbalanced carriers to generate electron-hole pairs. These electrons and holes should have a sufficient lifetime so that they do not recombine to disappear before they are separated. Under the action of an electric field built in the photoelectric conversion layer, the photon-generated carriers with opposite electrical signs are separated into electron-hole pairs, electrons are concentrated on one side, holes are concentrated on the other side, and accumulation of charges with different polarities is generated on the two sides, so that photogenerated electromotive force, namely photogenerated voltage, is generated.
In order to realize flexibility of the solar cell, the material for manufacturing the photoelectric conversion layer 10 may be a single crystal silicon thin film on the surface of the SOI substrate, or may be other organic polymer materials that can be coated, have light weight, low cost, and high flexibility, such as a dye-sensitized material, or may be a new material, such as a perovskite material.
Optionally, the thickness of the photoelectric conversion layer 10 is designed for maximizing the light efficiency, and is specifically defined according to the actual product requirements, which is not limited in this embodiment of the present application.
The embodiment of the application provides a solar cell includes: a photoelectric conversion layer, a first protective layer, and a second protective layer; the first protective layer is located on the light incident side of the photoelectric conversion layer, the second protective layer is located on the side, opposite to the light incident side, of the light ray conversion layer, and the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer. The application provides a technical scheme through first protective layer and second protection encapsulation photoelectric conversion layer, makes solar cell when strong external force pulls out, can play the effect of buffering stress, has improved solar cell's mechanical toughness and life.
In one embodiment, the first protective layer 20 and the second protective layer 30 are made of insulating transparent flexible materials in order to improve the mechanical toughness of the solar cell and not to affect the optical characteristics of the solar cell.
The insulating transparent flexible material needs to be transparent, flexible, capable of resisting the temperature of 200 ℃, stable in chemical property, non-toxic, odorless and resistant to acid and alkali corrosion, and the transmittance of the insulating transparent flexible material is higher than 92%. Optionally, in this embodiment, the insulating transparent material may be inorganic silica gel (msio2.nh2o), polydimethylsiloxane PDMS, and the like, which is not limited in this embodiment.
In the present embodiment, the first protective layer 20 and the second protective layer 30 are insulated to avoid short circuit of the solar cell, and further improve the service life of the solar cell.
Optionally, as shown in fig. 1, the solar cell provided in the embodiment of the present application further includes: a first electrode 40 and a second electrode 50, wherein the first electrode 40 is located on the side of the photoelectric conversion layer 10 close to the first protective layer 20, and the second electrode 50 is located on the side of the photoelectric conversion layer 10 close to the second protective layer 30.
Specifically, the orthographic projection of the first electrode 40 on the first protective layer 20 coincides with the orthographic projection of the photoelectric conversion layer 10 on the first protective layer 20, and the orthographic projection of the second electrode 50 on the first protective layer 20 coincides with the orthographic projection of the photoelectric conversion layer 10 on the first protective layer 20.
Optionally, the first electrode 40 and the second electrode 50 are made of materials including: the transparent conductive material may be IZO, ITO, ZnO, or the like, and the metal may be Mo, Ag, Al, Ti, or the like, and the materials of the first electrode 40 and the second electrode 50 are determined according to actual requirements, which is not limited in this embodiment.
Optionally, the thickness of the first electrode 40 is 50-300 nm.
When the first electrode 40 is made of a transparent conductive material, the first electrode 40 may be a planar electrode, a linear electrode, or a mesh electrode, and the thickness of the first electrode 40 is 50 to 200 nm.
When the first electrode 40 is made of metal, in order to ensure that photogenerated electrons and holes are rapidly collected by the first electrode and the second electrode before recombination, the first electrode 40 is a linear electrode or a mesh electrode, and the thickness of the first electrode 40 is 70-300 nanometers.
Fig. 2A is a first schematic structural diagram of a first electrode provided in the present embodiment, fig. 2B is a second schematic structural diagram of the first electrode provided in the present embodiment, fig. 2C is a third schematic structural diagram of the first electrode provided in the present embodiment, fig. 2A illustrates an example in which the first electrode is a planar electrode, fig. 2B illustrates an example in which the first electrode is a linear electrode, and fig. 2C illustrates an example in which the first electrode is a mesh.
Alternatively, the second electrode 50 may be a planar electrode, a linear electrode or a mesh electrode, and preferably, the second electrode 50 is a planar electrode for simplifying the manufacturing process. Optionally, the thickness of the second electrode 50 is 100 to 500 nanometers, and the shape and thickness of the second electrode are not limited in the embodiments of the present application, and the specific thickness is suitable for meeting the requirement of applying voltage.
When the material of the second electrode 50 is a conductive material with high reflectance, such as silver or aluminum, the second electrode 50 can reflect light emitted from the photoelectric conversion layer 10, and the optical efficiency of the solar cell can be improved.
In this embodiment, fig. 3 is a schematic structural diagram of a solar cell provided in this embodiment, and as shown in fig. 3, the solar cell provided in this embodiment further includes: the antireflection layer 60 is used for reducing reflection of light rays incident to the photoelectric conversion layer 10, the antireflection layer 60 is located on one side of the first electrode 40 close to the first protective layer 20, and the refractive index of the antireflection layer 60 is greater than that of the first protective layer 20 and smaller than that of the photoelectric conversion layer 10.
Specifically, the orthographic projection of the antireflection layer 60 on the first protective layer 20 coincides with the orthographic projection of the photoelectric conversion layer 10 on the first protective layer 20.
Optionally, the material of the anti-reflection layer 60 is a transparent material, and may be indium tin oxide or silicon dioxide, which is not limited in this embodiment. Alternatively, the thickness of the antireflection layer 60 is determined depending on the wavelength band of the converted light of the photoelectric conversion layer 10 and the refractive index of the material itself.
In the embodiment, the refractive index of the anti-reflection layer 60 is greater than the refractive index of the first protective layer 20 and less than the refractive index of the photoelectric conversion layer 10, so that the structural thickness of the solar cell can be reduced, and the transmittance of light can be increased.
It should be noted that, when the first electrode 40 is made of a transparent conductive material, the first electrode 40 may serve as an anti-reflection layer to reduce reflection of light rays incident on the photoelectric conversion layer 10, the anti-reflection layer 60 may be disposed in the solar cell provided in this embodiment of the application, or the anti-reflection layer 60 may not be disposed in the solar cell, and it is noted that the anti-reflection effect of the multi-layer anti-reflection layer is better than that of the single anti-reflection layer. In addition, when the refractive index of the first protective layer 20 is greater than the refractive index of air and smaller than the refractive index of the light conversion layer, the first protective layer 20 also plays a role of antireflection, and in this case, the antireflection layer 60 may or may not be provided.
In this embodiment, the antireflection layer 60 serves as a buffer, and can reduce the reflectivity of the surface of the solar cell to incident light and increase the intensity of light transmitted to the light conversion layer.
Optionally, in order to increase the optical path of light transmitted in the photoelectric conversion layer and improve the optical efficiency of solar energy, as shown in fig. 3, the solar cell provided in the embodiment of the present application further includes: and a reflective layer 70, wherein the reflective layer 70 is used for reflecting the light emitted from the photoelectric conversion layer 10, and the reflective layer 70 is located on one side of the second electrode 50 close to the second protective layer 30.
Specifically, the orthographic projection of the reflective layer 70 on the first protective layer 20 coincides with the orthographic projection of the photoelectric conversion layer 10 on the first protective layer 20.
Optionally, the material of the reflective layer 70 is a high-reflectivity material, and may be silver or aluminum, and the thickness of the reflective layer 70 is determined according to its own reflectivity, which is not limited in this embodiment of the application.
Note that, when the material for manufacturing the second electrode 50 is a conductive material with high reflectance, such as silver or aluminum, since the second electrode 50 itself functions as a reflective layer, in this case, the reflective layer in this embodiment is not necessary, and fig. 1 illustrates an example in which the second electrode 50 is not a reflective electrode, and a solar cell is provided with a reflective layer.
In the embodiment, the first electrode 40 and the second electrode 50 are located at two sides of the photoelectric conversion layer 10, and the photogenerated voltage generated by the photoelectric conversion layer 10 is transmitted to the first electrode 40 and the second electrode 50, and a load is connected, so that a photogenerated current passes through an external circuit, thereby obtaining power output, and the solar cell directly converts solar energy (or other light energy) into electric energy.
As another implementation manner, fig. 4 is a schematic structural diagram three of the solar cell provided in the embodiment of the present application, and as shown in fig. 4, the solar cell provided in the embodiment of the present application further includes: conductive particles 80, the conductive particles 80 being doped in the first protective layer 20, wherein the conductive particles 80 include: silver, nickel, carbon black material, carbon nanotubes, or graphite.
In this embodiment, the first protection layer 20 doped with the conductive particles is reused as the first electrode in fig. 1, and optionally, the refractive index of the first protection layer 20 is greater than the refractive index of air and smaller than the refractive index of the light conversion layer, that is, the first protection layer 20 in fig. 4 is also reused as an antireflection layer.
Specifically, as shown in fig. 4, the solar cell provided in the embodiment of the present application further includes: a second electrode 50; the second electrode 50 is located on a side of the photoelectric conversion layer 10 close to the second protective layer 30.
Alternatively, the second electrode 50 may be a planar electrode, a linear electrode or a mesh electrode, and preferably, the second electrode 50 is a planar electrode for simplifying the manufacturing process. Optionally, the thickness of the second electrode 50 is 100 to 50 nanometers, and the shape and thickness of the second electrode are not limited in the embodiments of the present application, and the specific thickness is suitable for meeting the requirement of applying voltage.
When the material of the second electrode 50 is a conductive material with high reflectivity, such as silver or aluminum, the second electrode 50 can reflect light emitted from the photoelectric conversion layer 10, and the optical efficiency of the solar cell can be improved.
Optionally, in order to increase an optical path of light transmitted in the photoelectric conversion layer and improve optical efficiency of solar energy, the solar cell provided in the embodiment of the present application further includes: and a reflective layer for reflecting light emitted from the photoelectric conversion layer 10, the reflective layer being located on a side of the second electrode 50 close to the second protective layer 30.
Specifically, the orthographic projection of the reflective layer on the first protective layer 20 coincides with the orthographic projection of the photoelectric conversion layer 10 on the first protective layer 20.
Optionally, the material of the reflective layer is a high-reflectivity material, and may be silver or aluminum, and the thickness of the reflective layer 70 is determined according to its own reflectivity, which is not limited in this embodiment of the application.
In the case where the second electrode 50 is made of a conductive material having a high reflectance, such as silver or aluminum, the second electrode 5 is a reflective electrode, and the second electrode 50 itself functions as a reflective layer when it is a reflective electrode, and in this case, the reflective layer in this embodiment is not necessarily provided, and fig. 4 illustrates the second electrode 50 as a reflective electrode.
In the embodiment, the first protective layer 20 and the second electrode 50 are located at two sides of the photoelectric conversion layer 10, and the photogenerated voltage generated by the photoelectric conversion layer 10 is transmitted to the first protective layer 20 and the second electrode 50, and a load is connected, so that a photogenerated current passes through an external circuit, thereby obtaining power output, and the solar cell directly converts solar energy (or other light energy) into electric energy.
Example two
Based on the inventive concept of the above embodiments, an embodiment of the present application further provides an electric device, including: a solar cell.
Optionally, the embodiment of the present application does not limit the concrete representation form of the electrical device in practical applications, for example, the electrical device in the embodiment of the present application may be a mobile phone, a PAD, a water heater, an outdoor display screen, a roof, or an automobile, and the embodiment of the present application is not limited in this respect.
The solar cell provided in the first embodiment is similar in implementation principle and implementation effect, and is not described herein again.
EXAMPLE III
Based on the inventive concept of the foregoing embodiment, an embodiment of the present application further provides a method for manufacturing a solar cell, fig. 5 is a flowchart of the method for manufacturing the solar cell provided in the embodiment of the present application, and as shown in fig. 5, the solar cell provided in the embodiment of the present application includes:
Alternatively, the material for manufacturing the photoelectric conversion layer may be a single crystal silicon thin film on the surface of the SOI substrate, or may be other organic polymer materials that can be coated, have light weight, low manufacturing cost, and high flexibility, such as a dye-sensitized material, or may be a new material, such as a perovskite material, and the like. The thickness of the photoelectric conversion layer is designed with the aim of maximizing the luminous efficiency, and is specifically defined according to the actual product requirements, which is not limited in any way in the embodiments of the present application.
The first protective layer may be made of inorganic silica gel (msio2.nh2o), polydimethylsiloxane PDMS, or the like.
In this embodiment, the first protective layer and the second protective layer are used for encapsulating the photoelectric conversion layer.
The second protective layer may be made of inorganic silica gel (msio2.nh2o), polydimethylsiloxane PDMS, or the like.
The method for manufacturing the solar cell provided in the embodiment of the application is used for manufacturing the solar cell provided in the first embodiment, and the implementation principle and the implementation effect are similar, and are not described herein again.
Optionally, after step 100, the method for manufacturing a solar cell provided in the embodiment of the present application further includes: a first electrode and an antireflection layer are sequentially formed on the light incident side of the photoelectric conversion layer.
Optionally, the first electrode is made of a material including: the first electrode 40 may be made of a transparent conductive material or a metal, wherein the transparent conductive material may be IZO, ITO, ZnO, or the like, and the metal may be Mo, Ag, Al, Ti, or the like.
When the first electrode is made of a transparent conductive material, the first electrode may be a planar electrode, a linear electrode or a mesh electrode, and the thickness of the first electrode is 50 to 200 nm.
When the first electrode is made of metal, the first electrode is a linear electrode or a mesh electrode, and the thickness of the first electrode is 70-300 nanometers.
Alternatively, the material of the anti-reflection layer is a transparent material, and may be indium tin oxide or silicon dioxide, and the thickness of the anti-reflection layer is determined according to the wavelength band of the converted light of the photoelectric conversion layer and the refractive index of the material itself.
After step 200, the method for manufacturing a solar cell provided in the embodiment of the present application further includes: and forming a second electrode on the side opposite to the light incident side of the photoelectric conversion layer.
Optionally, the second electrode is made of a material including: the first electrode 40 may be made of a transparent conductive material or a metal, wherein the transparent conductive material may be IZO, ITO, ZnO, or the like, and the metal may be Mo, Ag, Al, Ti, or the like.
Alternatively, the second electrode may be a planar electrode, a linear electrode or a mesh electrode, and preferably, in order to simplify the manufacturing process, the second electrode is a planar electrode. Optionally, the thickness of the second electrode is 100-500 nm, and the shape and thickness of the second electrode are not limited in the embodiments of the present application, and the specific thickness is preferably suitable for meeting the requirement of applying voltage.
Note that, if the material for manufacturing the second electrode is not a high-reflectivity conductive material, the method for manufacturing a solar cell according to the embodiment of the present application further includes, after forming the second electrode on the side opposite to the light incident side of the photoelectric conversion layer: and forming a reflecting layer on one side of the second electrode far away from the first protective layer.
Alternatively, the material of the reflective layer may be a high-reflectivity material, such as silver or aluminum, which is not limited in this embodiment.
When the photoelectric conversion layer is made of a monocrystalline silicon thin film, the first protective layer and the second protective layer are made of PDMS, and the antireflection layer is made of silicon dioxide, the first protective layer, the second protective layer and the antireflection layer are processed by oxygen plasma during the manufacture of the solar cell, so that the first protective layer and the antireflection layer can be bonded, the first protective layer and the second protective layer can be bonded, and the second protective layer and the second electrode can be bonded.
In this example, after oxygen plasma treatment of PDMS, the surface of PDMS will form SiOx, polar groups such as-OH groups, etc., and oxygen plasma treatment will make the surface of PDMS partially have-OSi (CH)3)2Conversion of O-groups to-O4Si(OH)4The groups, namely silicon hydroxyl groups, are increased, so that the hydrophilicity of PDMS is improved, and therefore, during the process of placing the first protective layer and the second protective layer after being folded, the newly generated active silicon hydroxyl groups on the surfaces can be subjected to condensation reaction due to close contact, so that the first protective layer and the second protective layer are permanently bonded.
In the embodiment, the surface of the anti-reflection layer contains a large number of Si-O bonds, and after the anti-reflection layer is subjected to oxygen plasma treatment, the Si-O bonds are broken, so that a large number of Si dangling bonds are formed on the surface of the anti-reflection layer, and the Si dangling bonds form Si-OH bonds by absorbing-OH groups in air. Meanwhile, after the PDMS is subjected to oxygen plasma treatment, a-OH group with hydrophilic property is introduced to the surface of the PDMS to replace a-CH group, so that the surface of the PDMS has extremely strong hydrophilic property. The reaction between the Si — OH groups of the oxygen plasma treated PDMS and the oxygen plasma treated silica between the two surfaces occurs as follows: 2Si-OH → Si-O-Si +2H2O, so that a strong Si-O bond is formed between the antireflective layer and the first protective layer,resulting in a permanent bond between the first protective layer and the antireflective layer.
In this embodiment, there is no particular requirement on the bonding strength between the second passivation layer and the second electrode, and the function of the embodiment is mainly to protect the solar cell, and the solar cell is sandwiched between the first passivation layer and the second passivation layer in a similar sandwich structure through the permanent bonding function between the first passivation layer and the second passivation layer, so as to form the solar cell with better mechanical endurance.
The method for manufacturing a solar cell provided in the embodiment of the present application is further described by taking an example where a manufacturing material of the photoelectric conversion layer is a single crystal silicon thin film, a manufacturing material of the first protective layer and a manufacturing material of the second protective layer are polydimethylsiloxane, and a manufacturing material of the second electrode is silver or aluminum.
Step S1 is to dope the first semiconductor material and the second semiconductor material in order in the single-crystal silicon thin film of the SOI substrate, and form the photoelectric conversion layer 10 including the first semiconductor layer 11 and the second semiconductor layer 12, as shown in fig. 6A.
Wherein the SOI substrate includes: a single crystal silicon substrate 103, an insulating layer 102, and a single crystal silicon thin film are provided in this order. Optionally, the thickness of the single crystal silicon substrate included in the SOI substrate is 100 to 500 micrometers, the thickness of the insulating layer is 5 nanometers to 4 micrometers, and the thickness of the single crystal silicon thin film is 100 to 5000 nanometers.
Specifically, in step S1, the ion implantation process is performed at high vacuum and low temperature, and the doped ions are accelerated at high pressure to obtain large kinetic energy and directly enter the monocrystalline silicon film, and then some lattice defects generated in the monocrystalline silicon film during the implantation of the doped ions are eliminated by high temperature annealing. The doping concentration profile of the ion implantation generally exhibits a gaussian profile and the concentration maxima are not at the surface, but at a depth within the surface. The depth of ion implantation is typically several tens of nanometers, e.g., 20 nanometers.
The trapping S2 thermally oxidizes the surface of the second semiconductor layer 12, as shown in fig. 6B.
Step S3 is to sequentially form the first electrode 40 and the anti-reflection layer 60 on the thermally oxidized second semiconductor layer 12, as shown in fig. 6C.
The first electrode 40 is sequentially formed on the thermally oxidized second semiconductor layer 12 by using an evaporation process or a deposition process, and the anti-reflection layer 60 is formed on the first electrode 40 by using a deposition process.
It should be noted that, if the material of the first electrode 40 is ITO, the method provided in this embodiment may not form an anti-reflection layer.
Step S4, performing plasma treatment on the anti-reflection layer and the first protective material, and attaching the plasma-treated first protective material and the plasma-treated anti-reflection layer to form a first protective layer, as shown in fig. 6D.
Step S4 specifically includes pouring the first protective material composition into a container with the antireflective layer placed therein, and standing and curing to form the first protective layer.
Step S5, etching the single crystal silicon substrate and the insulating layer on the SOI substrate by using a wet etching process, as shown in fig. 6E.
Specifically, step S5 wet etches the single crystal silicon substrate of the SOI substrate with a 23% KOH solution, where the etching time is related to the KOH concentration and the solution temperature. In order to accelerate the etching rate, the etching solution can be heated to increase the etching rate, and then the insulating layer is etched by using HF.
The thickness of the solar cell can be reduced by etching the monocrystalline silicon substrate and the insulating layer, and the first protective layer plays a role in protecting the first electrode and the antireflection layer in step S5.
Step S6 is to form a second electrode 50 on the side of the first semiconductor layer 11 away from the second semiconductor layer 12, as shown in fig. 6F.
Specifically, in step S6, the second electrode 50 is formed by an evaporation process or a deposition process. Optionally, the deposition process comprises: physical vapor deposition process.
Step S7 is to perform plasma treatment on the second protective material, and attach the second protective material after the plasma treatment to the side of the second electrode 50 away from the first semiconductor layer 11 to form the second protective layer 30, as shown in fig. 6G.
The drawings of the embodiments of the invention only relate to the structures related to the embodiments of the invention, and other structures can refer to common designs.
In the drawings used to describe embodiments of the invention, the thickness and dimensions of layers or microstructures are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (15)
1. A solar cell, comprising: a photoelectric conversion layer, a first protective layer, and a second protective layer;
the first protective layer is positioned on the light incident side of the photoelectric conversion layer, the second protective layer is positioned on the side opposite to the light incident side of the photoelectric conversion layer, and the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer; the first protective layer is arranged on the light incidence side surface and the side surface of the photoelectric conversion layer, the second protective layer is arranged on the surface and the side surface of the photoelectric conversion layer opposite to the light incidence side, and the first protective layer and the second protective layer are connected at the end part of the photoelectric conversion layer;
the solar cell further includes: conductive particles doped in the first protective layer, the first protective layer multiplexed as a first electrode;
the solar cell further includes: a second electrode; the second electrode is positioned on one side of the photoelectric conversion layer close to the second protective layer.
2. The solar cell of claim 1, wherein the first protective layer and the second protective layer are made of an insulating flexible transparent material.
3. The solar cell of claim 2,
the insulating transparent flexible material is transparent and flexible, has the transmittance higher than 92%, can resist the temperature of 200 ℃, is stable in chemical property, is nontoxic and tasteless, and is resistant to acid and alkali corrosion.
4. The solar cell according to claim 3,
the first protective layer is also multiplexed as a antireflective layer.
5. The solar cell according to claim 4,
the anti-reflection layer is made of indium tin oxide or silicon dioxide.
6. The solar cell of claim 1,
the conductive particles include: silver, nickel, carbon black, carbon nanotubes, or graphite.
7. The solar cell of claim 2, wherein the insulating flexible transparent material is an inorganic silica gel or polydimethylsiloxane.
8. The solar cell according to claim 1, wherein a refractive index of the first protective layer is greater than a refractive index of air and less than a refractive index of the photoelectric conversion layer.
9. The solar cell of claim 1, wherein the second electrode is made of a material comprising: transparent conducting material or metal, the thickness of second electrode is 70 ~ 300 nanometers.
10. The solar cell of claim 9, further comprising: a reflective layer for reflecting light emitted from the photoelectric conversion layer;
the reflecting layer is positioned on one side of the second electrode close to the second protective layer.
11. The solar cell according to claim 1, wherein the photoelectric conversion layer comprises: a first semiconductor layer and a second semiconductor layer;
the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, or the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer.
12. An electrical device, comprising: the solar cell according to any one of claims 1 to 11.
13. A method for manufacturing a solar cell, the method being used for manufacturing the solar cell according to any one of claims 1 to 11, the method comprising:
forming a photoelectric conversion layer;
forming a first protective layer on the light incident side of the photoelectric conversion layer; the solar cell further includes: conductive particles doped in the first protective layer, the first protective layer multiplexed as a first electrode;
forming a second electrode on the side opposite to the light incident side of the photoelectric conversion layer;
forming a second protective layer on the side opposite to the light incident side of the photoelectric conversion layer, wherein the first protective layer and the second protective layer are used for packaging the photoelectric conversion layer;
the second electrode is positioned on one side of the photoelectric conversion layer close to the second protective layer;
the first protective layer is arranged on the light incidence side surface and the side surface of the photoelectric conversion layer, the second protective layer is arranged on the opposite side surface and the side surface of the light incidence side of the photoelectric conversion layer, and the first protective layer is connected with the second protective layer at the end part of the photoelectric conversion layer.
14. The method of claim 13, wherein the first protection layer is further multiplexed as a subtractive layer.
15. The method according to claim 14, wherein when a material for forming the photoelectric conversion layer is a single crystalline silicon thin film and materials for forming the first protective layer and the second protective layer are polydimethylsiloxane, the forming the photoelectric conversion layer comprises: doping a first semiconductor material and a second semiconductor material in sequence in a monocrystalline silicon thin film of an SOI substrate to form a photoelectric conversion layer comprising a first semiconductor layer and a second semiconductor layer; the SOI substrate includes: the monocrystalline silicon substrate, the insulating layer and the monocrystalline silicon thin film are arranged in sequence;
the forming of the antireflection layer on the light incident side of the photoelectric conversion layer includes: thermally oxidizing a surface of the second semiconductor layer; forming an anti-reflection layer on the second semiconductor layer after thermal oxidation;
the forming of the first protective layer on the light incident side of the photoelectric conversion layer includes: carrying out plasma treatment on the antireflection layer and the first protection material, and attaching the first protection material subjected to the plasma treatment to the antireflection layer subjected to the plasma treatment to form a first protection layer;
the forming of the second electrode on the side opposite to the light incident side of the photoelectric conversion layer includes: etching the insulating layer and the monocrystalline silicon substrate by adopting a wet etching process, and forming a second electrode on one side of the first semiconductor layer, which is far away from the second semiconductor layer;
the forming of the second protective layer on the side opposite to the light incident side of the photoelectric conversion layer includes: and carrying out plasma treatment on the second protective material, and attaching the second protective material subjected to the plasma treatment to one side of the second electrode, which is far away from the first semiconductor layer, so as to form a second protective layer.
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