CN110021675A - A kind of solar battery and preparation method thereof, electrical equipment - Google Patents
A kind of solar battery and preparation method thereof, electrical equipment Download PDFInfo
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- CN110021675A CN110021675A CN201910308050.9A CN201910308050A CN110021675A CN 110021675 A CN110021675 A CN 110021675A CN 201910308050 A CN201910308050 A CN 201910308050A CN 110021675 A CN110021675 A CN 110021675A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of solar battery and preparation method thereof, electrical equipment, wherein solar battery includes: photoelectric conversion layer, the first protective layer and the second protective layer；First protective layer is located at the incident side of photoelectric conversion layer, and the second protective layer is located at the opposite side of incident side of light conversion layer, the first protective layer and second protective layer used in encapsulation photoelectric conversion layer.Technical solution provided by the present application improves the mechanical tenacity and service life of solar battery by the first protective layer and the second protection packaging photoelectric conversion layer.
Description
Technical field
Present document relates to battery technology fields, and in particular to a kind of solar battery and preparation method thereof, electrical equipment.
Background technique
Increase with the mankind to demand for energy, conventional energy resource reserves are limited and non-renewable, therefore developing can be again
More and more attention has been paid to ground using solar cell module (the also known as photovoltaic module) of solar energy for the raw energy especially solar energy
It is also more and more extensive to study carefully exploitation.
Through inventor the study found that the mechanical tenacity of solar battery in the related technology is poor, so that solar battery
Service life it is shorter.
Summary of the invention
This application provides a kind of solar batteries and preparation method thereof, electrical equipment, and solar battery can be improved
Mechanical tenacity and service life.
In a first aspect, this application provides a kind of solar batteries, comprising: photoelectric conversion layer, the first protective layer and second
Protective layer；
First protective layer is located at the incident side of the photoelectric conversion layer, and second protective layer is located at the light and turns
Change the opposite side of the incident side of layer, first protective layer and described second protective layer used in encapsulating the photoelectric conversion layer.
Optionally, the making material of first protective layer and second protective layer is the flexible clear materials of insulation.
Optionally, the solar battery further include: first electrode and second electrode；
The first electrode is located at the photoelectric conversion layer close to the side of first protective layer, the second electrode position
In the photoelectric conversion layer close to the side of second protective layer.
Optionally, the solar battery further include: anti-reflection layer, the anti-reflection layer turn for reducing the photoelectricity described in directive
Change the reflection of the light of layer；
The anti-reflection layer is located at the first electrode close to the side of first protective layer, the refractive index of the anti-reflection layer
Greater than the refractive index of first protective layer, and it is less than the refractive index of the photoelectric conversion layer.
Optionally, the making material of the first electrode includes: transparent conductive material or metal, the first electrode
With a thickness of 50~300 nanometers；
When the making material of the first electrode is metal, the first electrode is strip shaped electric poles or mesh electrode.
Optionally, the solar battery further include: conductive particle, the conductive particle are entrained in first protective layer
In；
The conductive particle includes: silver, nickel, carbon black, carbon nanotube or graphite.
Optionally, the solar battery further include: second electrode；
The second electrode is located at the photoelectric conversion layer close to the side of second protective layer.
Optionally, the refractive index of first protective layer is greater than air refraction, and is less than the folding of the light conversion layer
Penetrate rate.
Optionally, the making material of second battery includes: transparent conductive material or metal, the second electrode
With a thickness of 70~300 nanometers.
Optionally, the solar battery further include: reflecting layer, the reflecting layer is for reflecting from the photoelectric conversion layer
The light of injection；
The reflecting layer is located at the second electrode close to the side of second protective layer.
Optionally, the photoelectric conversion layer includes: the first semiconductor layer and the second semiconductor layer；
First semiconductor layer is p type semiconductor layer, and second semiconductor layer is n type semiconductor layer, alternatively, described
First semiconductor layer is n type semiconductor layer, and second semiconductor layer is p type semiconductor layer.
Second aspect, the embodiment of the present application also provide a kind of electrical equipment, comprising: above-mentioned solar battery.
The third aspect, the embodiment of the present application also provide a kind of preparation method of solar battery, are used to prepare the above-mentioned sun
Energy battery, which comprises
Form photoelectric conversion layer；
The first protective layer is formed in the incident side of the photoelectric conversion layer；
The second protective layer is formed in the opposite side of the incident side of the photoelectric conversion layer, first protective layer and described
Second is protective layer used in the encapsulation photoelectric conversion layer.
Optionally, after the formation photoelectric conversion layer, the method also includes:
First electrode and anti-reflection layer are sequentially formed in the incident side of photoelectric conversion layer；
The incident side in the photoelectric conversion layer is formed after the first protective layer, the method also includes:
Second electrode is formed in the opposite side of the incident side of the photoelectric conversion layer.
Optionally, when the making material of the photoelectric conversion layer is monocrystalline silicon thin film, first protective layer and described the
When the making material of two protective layers is dimethyl silicone polymer, the photoelectric conversion layer that formed includes: the monocrystalline silicon in SOI substrate
The first semiconductor material and the second semiconductor material are successively adulterated in film, being formed includes the first semiconductor layer and the second semiconductor
The photoelectric conversion layer of layer；The SOI substrate includes: the monocrystalline substrate set gradually, insulating layer and monocrystalline silicon thin film；
The incident side in photoelectric conversion layer sequentially forms first electrode and anti-reflection layer includes: by the second semiconductor layer
Surface thermal oxide；First electrode and anti-reflection layer are sequentially formed on the second semiconductor layer after thermal oxide；
It includes: to carry out anti-reflection layer and the first protection materials that the incident side in photoelectric conversion layer, which forms the first protective layer,
The first protection materials after corona treatment are bonded by corona treatment with the anti-reflection layer after corona treatment,
To form the first protective layer；
It includes: to be carved using wet-etching technology that the opposite side of the incident side in photoelectric conversion layer, which forms second electrode,
Insulating layer and monocrystalline substrate are lost, forms second electrode far from the side of the second semiconductor layer in the first semiconductor layer；
The opposite side of the incident side in photoelectric conversion layer formed the second protective layer include: by the second protection materials into
The second protection materials after corona treatment are fitted in second electrode far from the first semiconductor layer by row corona treatment
Side forms the second protective layer.
The embodiment of the present application provides a kind of solar battery and preparation method thereof, electrical equipment, wherein solar battery packet
It includes: photoelectric conversion layer, the first protective layer and the second protective layer；First protective layer is located at the incident side of photoelectric conversion layer, and second protects
Sheath is located at the opposite side of incident side of light conversion layer, the first protective layer and second protective layer used in encapsulation photoelectric conversion
Layer.Technical solution provided by the present application makes solar battery exist by the first protective layer and the second protection packaging photoelectric conversion layer
When strong external force is drawn high, it can play the role of buffering stress, improve the mechanical tenacity and service life of solar battery.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood and implementing the application.Other advantages of the application can be by specification, claims
And scheme described in attached drawing is achieved and obtained.
Detailed description of the invention
Attached drawing is used to provide the understanding to technical scheme, and constitutes part of specification, with the application's
Embodiment is used to explain the technical solution of the application together, does not constitute the limitation to technical scheme.
Fig. 1 is the structural schematic diagram one of solar battery provided by the embodiments of the present application；
Fig. 2A is the structural schematic diagram one of first electrode provided by the embodiments of the present application；
Fig. 2 B is the structural schematic diagram two of first electrode provided by the embodiments of the present application；
Fig. 2 C is the structural schematic diagram three of first electrode provided by the embodiments of the present application；
Fig. 3 is the structural schematic diagram two of solar battery provided by the embodiments of the present application；
Fig. 4 is the structural schematic diagram three of solar battery provided by the embodiments of the present application；
Fig. 5 is the flow chart of the preparation method of solar battery provided by the embodiments of the present application；
Fig. 6 A is the preparation method schematic diagram one of solar battery provided by the embodiments of the present application；
Fig. 6 B is the preparation method schematic diagram two of solar battery provided by the embodiments of the present application；
Fig. 6 C is the preparation method schematic diagram three of solar battery provided by the embodiments of the present application；
Fig. 6 D is the preparation method schematic diagram four of solar battery provided by the embodiments of the present application；
Fig. 6 E is the preparation method schematic diagram five of solar battery provided by the embodiments of the present application；
Fig. 6 F is the preparation method schematic diagram six of solar battery provided by the embodiments of the present application；
Fig. 6 G is the preparation method schematic diagram seven of solar battery provided by the embodiments of the present application.
Specific embodiment
This application describes multiple embodiments, but the description is exemplary, rather than restrictive, and for this
It is readily apparent that can have more in the range of embodiments described herein includes for the those of ordinary skill in field
More embodiments and implementation.Although many possible feature combinations are shown in the attached drawings, and in a specific embodiment
It is discussed, but many other combinations of disclosed feature are also possible.Unless the feelings specially limited
Other than condition, any feature or element of any embodiment can be with any other features or element knot in any other embodiment
It closes and uses, or any other feature or the element in any other embodiment can be substituted.
The application includes and contemplates the combination with feature known to persons of ordinary skill in the art and element.The application is
It can also combine with any general characteristics or element through disclosed embodiment, feature and element, be defined by the claims with being formed
Unique scheme of the invention.Any feature or element of any embodiment can also be with features or member from other scheme of the invention
Part combination, to form the unique scheme of the invention that another is defined by the claims.It will thus be appreciated that showing in this application
Out and/or any feature of discussion can be realized individually or in any suitable combination.Therefore, in addition to according to appended right
It is required that and its other than the limitation done of equivalent replacement, embodiment is not limited.Furthermore, it is possible in the guarantor of appended claims
It carry out various modifications and changes in shield range.
In addition, method and/or process may be rendered as spy by specification when describing representative embodiment
Fixed step sequence.However, in the degree of this method or process independent of the particular order of step described herein, this method
Or process should not necessarily be limited by the step of particular order.As one of ordinary skill in the art will appreciate, other steps is suitable
Sequence is also possible.Therefore, the particular order of step described in specification is not necessarily to be construed as limitations on claims.This
Outside, the claim for this method and/or process should not necessarily be limited by the step of executing them in the order written, art technology
Personnel are it can be readily appreciated that these can sequentially change, and still remain in the spirit and scope of the embodiment of the present application.
Unless otherwise defined, the embodiment of the present invention discloses the technical term used or scientific term should be institute of the present invention
The ordinary meaning that personage in category field with general technical ability is understood." first ", " second " used in the embodiment of the present invention
And similar word is not offered as any sequence, quantity or importance, and be used only to distinguish different component parts.
The similar word such as " comprising " or "comprising", which means to occur element or object before the word, to be covered to appear in and arranges behind the word
The element of act perhaps object and its equivalent and be not excluded for other elements or object.The similar word such as " connection " or " connected "
Language is not limited to physics or mechanical connection, but may include electrical connection, either direct or indirect
's."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for the object being described changes
Afterwards, then the relative positional relationship may also correspondingly change.
Embodiment one
The embodiment of the present application provides a kind of solar battery, and Fig. 1 is the knot of solar battery provided by the embodiments of the present application
Structure schematic diagram one, as shown in Figure 1, solar battery provided by the embodiments of the present application includes: photoelectric conversion layer 10, the first protective layer
20 and second protective layer 30, wherein the first protective layer 20 is located at the incident side of photoelectric conversion layer 10, and the second protective layer 30 is located at light
The opposite side of the incident side of line conversion layer 10, the first protective layer 20 and the second protective layer 30 are for encapsulating photoelectric conversion layer 10.
In the present embodiment, orthographic projection covering photoelectric conversion layer 20 of first protective layer 20 on the second protective layer 30 is second
The orthographic projection of protective layer 30, orthographic projection covering photoelectric conversion layer 20 of second protective layer 30 on the first protective layer 20 are protected first
Orthographic projection on sheath 20.
Wherein, as shown in Figure 1, photoelectric conversion layer 10 includes: the first semiconductor layer 11 and the second semiconductor in the present embodiment
Layer 12, wherein the first semiconductor layer 11 is located at the second semiconductor layer 12 close to 20 side of the first protective layer.
Optionally, the first semiconductor layer 11 is p type semiconductor layer, and the second semiconductor layer 12 is n type semiconductor layer, alternatively,
First semiconductor layer 11 is n type semiconductor layer, and the second semiconductor layer 12 is p type semiconductor layer.The embodiment of the present application does not make this
Any restriction.
In the present embodiment, photoelectric conversion layer 10 has for the light of directive photoelectric conversion layer 10 to be absorbed and converted
Body, photoelectric conversion layer absorbs the photon with certain energy, inspires nonequilibrium carrier and generates electron-hole pair.These
Electrons and holes should have enough service life, compound will not be disappeared before separating at them.The opposite photoproduction of these electrical symbols
Under the action of photoelectric conversion layer built in field, electron-hole pair is separated carrier, and electron concentration is concentrated in one side, hole
In another side, the accumulation of the charges of different polarity is generated on both sides, to generate photo-induced voltage, i.e. photovoltage.
In order to realize the flexibility of solar battery, the making material of photoelectric conversion layer 10 can be SOI substrate surface
Monocrystalline silicon thin film is also possible to other can be coated, light weight, low cost and the high organic polymer material of flexibility, example
It can also be new material, such as perovskite material etc. such as dye sensitization material.
Optionally, the thickness of photoelectric conversion layer 10 by light efficiency maximize for the purpose of design, with specific reference to actual product demand
It limits, the embodiment of the present application is not limited in any way this.
Solar battery provided by the embodiments of the present application includes: photoelectric conversion layer, the first protective layer and the second protective layer；The
One protective layer is located at the incident side of photoelectric conversion layer, and the second protective layer is located at the opposite side of incident side of light conversion layer, and
One protective layer and second it is protective layer used in encapsulation photoelectric conversion layer.Technical solution provided by the present application passes through the first protective layer and the
Two protection packaging photoelectric conversion layers make solar battery when strong external force is drawn high, and can play the role of buffering stress, improve
The mechanical tenacity and service life of solar battery.
As an implementation, in order to improve the mechanical tenacity of solar battery, and the light of solar battery is not influenced
Characteristic is learned, in the present embodiment, the making material of the first protective layer 20 and the second protective layer 30 be the clear flexible material to insulate.
Wherein, the clear flexible material of insulation needs for transmitance higher than 92%, transparent, flexible, 200 DEG C of ability
Temperature, chemical property is stable, non-toxic and tasteless and acid-alkali-corrosive-resisting material.Optionally, in the present embodiment, insulation it is saturating
Bright material can be inorganic silica gel (mSiO2.nH2O), and polydimethylsiloxane etc., the present embodiment do not do any limit to this
It is fixed.
The first protective layer 20 and the insulation of the second protective layer 30, are the short circuits in order to avoid solar battery in the present embodiment,
Further increase the service life of solar battery.
Optionally, as shown in Figure 1, solar battery provided by the embodiments of the present application further include: first electrode 40 and second
Electrode 50, wherein first electrode 40 is located at photoelectric conversion layer 10 close to the side of the first protective layer 20, and second electrode 50 is located at light
Electric conversion layer 10 is close to the side of the second protective layer 30.
Specifically, orthographic projection of the first electrode 40 on the first protective layer 20 and photoelectric conversion layer 10 are in the first protective layer 20
On orthographic projection be overlapped, orthographic projection of the second electrode 50 on the first protective layer 20 and photoelectric conversion layer 10 are in the first protective layer 20
On orthographic projection be overlapped.
Optionally, the making material of first electrode 40 and second electrode 50 includes: transparent conductive material or metal,
In, transparent conductive material can be zinc-tin oxide IZO, tin indium oxide ITO or zinc oxide ZnO etc., and metal can be molybdenum Mo, silver
The making material of Ag, aluminium Al, titanium Ti etc., first electrode 40 and second electrode 50 determines that the application is real with specific reference to actual demand
It applies example and this is not limited in any way.
Optionally, first electrode 40 with a thickness of 50~300 nanometers.
When the making material of first electrode 40 is transparent conductive material, first electrode 40 can be plane-shape electrode, threadiness
Electrode or mesh electrode, first electrode 40 with a thickness of 50~200 nanometers, the embodiment of the present application is not to the shape of first electrode
It is defined with thickness, specific thickness applies alive demand and be advisable can satisfy.
When the making material of first electrode 40 is metal, in order to guarantee light induced electron and hole by first electrode and second
Electrode is quickly collected before compound, and first electrode 40 is wire electrode or mesh electrode, the thickness of first electrode 40
70~300 nanometers, the embodiment of the present application is not defined the shape of first electrode and thickness, and specific thickness is can expire
Foot, which applies alive demand, to be advisable.
Fig. 2A is the structural schematic diagram one of first electrode provided by the embodiments of the present application, and Fig. 2 B provides for the embodiment of the present application
First electrode structural schematic diagram two, Fig. 2 C be first electrode provided by the embodiments of the present application structural schematic diagram three, Fig. 2A
It is to be illustrated so that first electrode is plane-shape electrode as an example, Fig. 2 B is illustrated so that first electrode is wire electrode as an example
, Fig. 2 C is illustrated so that first electrode is netted as an example.
Optionally, second electrode 50 can be plane-shape electrode, wire electrode or mesh electrode, it is preferable that in order to simplify system
Make technique, second electrode 50 is plane-shape electrode.Optionally, second electrode 50 with a thickness of 100~500 nanometers, the application is implemented
Example is not defined the shape of second electrode and thickness, and specific thickness applies alive demand and be advisable can satisfy.
It should be noted that when the conductive material that the making material of second electrode 50 is high reflectance such as silver or aluminium,
Second electrode 50 can reflect back the light projected from photoelectric conversion layer 10, can be improved the optics effect of solar battery
Rate.
In the present embodiment, Fig. 3 is the structural schematic diagram two of solar battery provided by the embodiments of the present application, as shown in figure 3,
Solar battery provided by the embodiments of the present application further include: anti-reflection layer 60, anti-reflection layer 60 is for reducing to directive photoelectric conversion layer
The reflection of 10 light, anti-reflection layer 60 are located at first electrode 40 close to the side of the first protective layer 20, the refractive index of anti-reflection layer 60
Greater than the refractive index of the first protective layer 20, and it is less than the refractive index of photoelectric conversion layer 10.
Specifically, anti-reflection layer 60 on the first protective layer 20 orthographic projection and photoelectric conversion layer 10 on the first protective layer 20
Orthographic projection be overlapped.
Optionally, the making material of anti-reflection layer 60 is transparent material, can be tin indium oxide or silica etc., this reality
It applies example and this is not limited in any way.Optionally, the thickness of anti-reflection layer 60 according to photoelectric conversion layer 10 conversion light wave band and
The refractive index of making material itself determines.
The refractive index of anti-reflection layer 60 is greater than the refractive index of the first protective layer 20 in the present embodiment, and is less than photoelectric conversion layer 10
Refractive index, can reduce the structural thickness of solar battery, and increase the transmitance of light.
It should be noted that first electrode 40 can be made when the making material of first electrode 40 is transparent conductive material
For anti-reflection layer, to reduce the reflection to the light of directive photoelectric conversion layer 10, in solar battery provided by the embodiments of the present application
Anti-reflection layer 60 can be set, anti-reflection layer 60 can also be not provided with, it is notable that the anti-reflection effect of multilayer anti-reflection layer is better than single
The anti-reflection effect of one anti-reflection layer.In addition, when the refractive index of the first protective layer 20 is greater than air refraction, and it is less than light conversion layer
Refractive index when, the first protective layer 20 also play anti-reflection effect, at this point, anti-reflection layer 60, which can be set, to be not provided with.
In the present embodiment, anti-reflection layer 60 can reduce solar cell surface to entering as a buffering is played the role of
The reflectivity of light is penetrated, the light intensity for being transmitted to light conversion layer is increased.
Optionally, for the light path that increasing light transmits in photoelectric conversion layer, the optical efficiency of solar energy is improved, is such as schemed
Shown in 3, solar battery provided by the embodiments of the present application further include: reflecting layer 70, reflecting layer 70 is for reflecting from photoelectric conversion
The light that layer 10 projects, reflecting layer 70 is located at second electrode 50 close to the side of the second protective layer 30.
Specifically, reflecting layer 70 on the first protective layer 20 orthographic projection and photoelectric conversion layer 10 on the first protective layer 20
Orthographic projection be overlapped.
Optionally, the making material in reflecting layer 70 is the material of high reflectance, can be silver or aluminium etc., the thickness in reflecting layer 70
Degree determines that the embodiment of the present application is not limited in any way this according to the reflectivity of itself.
It should be noted that if when the making material of second electrode 50 is the conductive material such as silver or aluminium of high reflectance,
Since second electrode 50 itself plays the role of reflecting layer, at this point, the reflecting layer in the present embodiment is just not necessarily to be arranged, figure
1 is provided in solar battery and is illustrated for reflecting layer so that second electrode 50 is not reflecting electrode as an example.
First electrode 40 and second electrode 50 in the present embodiment are located at the two sides of photoelectric conversion layer 10, photoelectric conversion layer 10
The photovoltage of generation is transferred in first electrode 40 and second electrode 50, and connects load, then has photoproduction in external circuit
Electric current passes through, to obtain power output, solar energy (or other luminous energy) has just been directly changed into electric energy by solar battery.
As another embodiment, Fig. 4 is the structural schematic diagram three of solar battery provided by the embodiments of the present application, such as
Shown in Fig. 4, solar battery provided by the embodiments of the present application further include: conductive particle 80, conductive particle 80 are entrained in the first guarantor
In sheath 20, wherein conductive particle 80 includes: silver, nickel, carbon black materials, carbon nanotube or graphite.
In the present embodiment, it is multiplexed with the first electrode in Fig. 1 doped with the first protective layer 20 of conductive particle, optionally,
The refractive index of first protective layer 20 is greater than air refraction, and is less than the refractive index of light conversion layer, i.e. the first protection in Fig. 4
Layer 20 is also multiplexed with anti-reflection layer.
Specifically, as shown in figure 4, solar battery provided by the embodiments of the present application further include: second electrode 50；Second electricity
Pole 50 is located at photoelectric conversion layer 10 close to the side of the second protective layer 30.
Optionally, second electrode 50 can be plane-shape electrode, wire electrode or mesh electrode, it is preferable that in order to simplify system
Make technique, second electrode 50 is plane-shape electrode.Optionally, second electrode 50 with a thickness of 100~50 nanometers, the embodiment of the present application
The shape of second electrode and thickness are not defined, specific thickness applies alive demand and be advisable can satisfy.
It should be noted that when the conductive material that the making material of second electrode 50 is high reflectance, such as when silver or aluminium,
Second electrode 50 can reflect back the light projected from photoelectric conversion layer 10, can be improved the optics effect of solar battery
Rate.
Optionally, for the light path that increasing light transmits in photoelectric conversion layer, the optical efficiency of solar energy is improved, this Shen
Please embodiment provide solar battery further include: reflecting layer, reflecting layer be used for reflect from photoelectric conversion layer 10 injection light,
Reflecting layer is located at second electrode 50 close to the side of the second protective layer 30.
Specifically, reflecting layer on the first protective layer 20 orthographic projection and photoelectric conversion layer 10 on the first protective layer 20
Orthographic projection is overlapped.
Optionally, the making material in reflecting layer is the material of high reflectance, can be silver or aluminium etc., the thickness in reflecting layer 70
It is determined according to the reflectivity of itself, the embodiment of the present application is not limited in any way this.
It should be noted that if when the making material of second electrode 50 is the conductive material such as silver or aluminium of high reflectance,
At this point, second electrode 5 be reflecting electrode, due to second electrode 50 be reflecting electrode when, itself plays the role of reflecting layer, this
When, the reflecting layer in the present embodiment is just not necessarily to be arranged, and Fig. 4 is illustrated so that second electrode 50 is reflecting electrode as an example
's.
The first protective layer 20 and second electrode 50 in the present embodiment are located at the two sides of photoelectric conversion layer 10, photoelectric conversion layer
10 photovoltages generated are transferred in the first protective layer 20 and second electrode 50, and connect load, then are had in external circuit
Photogenerated current passes through, to obtain power output, solar energy (or other luminous energy) has just been directly changed into electricity by solar battery
Energy.
Embodiment two
Inventive concept based on the above embodiment, the embodiment of the present application also provide a kind of electrical equipment, comprising: solar-electricity
Pond.
Optionally, the embodiment of the present application is not intended to limit the specific manifestation form of electrical equipment in practical applications, such as this
The electrical equipment of application embodiment can be mobile phone, PAD, water heater, outdoor display screen, roof or automobile etc., and the application is real
It applies example and this is not limited in any way.
Wherein, solar battery is the solar battery that embodiment one provides, and realization principle is similar with effect is realized,
This is repeated no more.
Embodiment three
Inventive concept based on the above embodiment, the embodiment of the present application also provide a kind of preparation method of solar battery,
Fig. 5 is the flow chart of the preparation method of solar battery provided by the embodiments of the present application, as shown in figure 5, the embodiment of the present application mentions
The solar battery of confession includes:
Step 100 forms photoelectric conversion layer.
Optionally, the making material of photoelectric conversion layer can be the monocrystalline silicon thin film on SOI substrate surface, be also possible to other
Can coat, light weight, low cost and the high organic polymer material of flexibility, such as dye sensitization material can also be
New material, such as perovskite material etc..The thickness of photoelectric conversion layer by light efficiency maximize for the purpose of design, with specific reference to reality
Product demand limits, and the embodiment of the present application is not limited in any way this.
Step 200, incident side the first protective layer of formation in photoelectric conversion layer.
Wherein, the making material of the first protective layer can be inorganic silica gel (mSiO2.nH2O), dimethyl silicone polymer
PDMS etc..
Step 300 forms the second protective layer in the opposite side of the incident side of photoelectric conversion layer.
In the present embodiment, the first protective layer and second it is protective layer used in encapsulation photoelectric conversion layer.
Wherein, the making material of the second protective layer can be inorganic silica gel (mSiO2.nH2O), dimethyl silicone polymer
PDMS etc..
Wherein, the preparation method of solar battery provided by the embodiments of the present application is used to prepare embodiment one and provides too
Positive energy battery, realization principle is similar with effect is realized, details are not described herein.
Optionally, after step 100, the preparation method of solar battery provided by the embodiments of the present application further include:
The incident side of photoelectric conversion layer sequentially forms first electrode and anti-reflection layer.
Optionally, the making material of first electrode includes: transparent conductive material or metal, wherein transparent conductive material
Can be for zinc-tin oxide IZO, tin indium oxide ITO or zinc oxide ZnO etc., metal can be molybdenum Mo, silver-colored Ag, aluminium Al, titanium Ti etc.,
The making material of first electrode 40 determines that the embodiment of the present application is not limited in any way this with specific reference to actual demand.
When the making material of first electrode is transparent conductive material, first electrode can be plane-shape electrode, wire electrode
Or mesh electrode, first electrode with a thickness of 50~200 nanometers, the embodiment of the present application is not to the shape of first electrode and thickness
It is defined, specific thickness applies alive demand and be advisable can satisfy.
When the making material of first electrode be metal when, first electrode be wire electrode or mesh electrode, first electrode
70~300 nanometers of thickness, the embodiment of the present application is not defined the shape of first electrode and thickness, and specific thickness is with can
Applying alive demand with satisfaction is advisable.
Optionally, the making material of anti-reflection layer is transparent material, can be tin indium oxide or silica etc., anti-reflection layer
Thickness according to photoelectric conversion layer conversion light wave band and making material itself refractive index determine.
After step 200, the preparation method of solar battery provided by the embodiments of the present application further include: in photoelectric conversion
The opposite side of the incident side of layer forms second electrode.
Optionally, the making material of second electrode includes: transparent conductive material or metal, wherein transparent conductive material
Can be for zinc-tin oxide IZO, tin indium oxide ITO or zinc oxide ZnO etc., metal can be molybdenum Mo, silver-colored Ag, aluminium Al, titanium Ti etc.,
The making material of first electrode 40 determines that the embodiment of the present application is not limited in any way this with specific reference to actual demand.
Optionally, second electrode can be plane-shape electrode, wire electrode or mesh electrode, it is preferable that in order to simplify production
Technique, second electrode are plane-shape electrode.Optionally, second electrode with a thickness of 100~500nm, the embodiment of the present application is not right
The shape and thickness of second electrode are defined, and specific thickness applies alive demand and be advisable can satisfy.
It should be noted that if the making material of second electrode is not the conductive material of high reflectance, the embodiment of the present application
The preparation method of the solar battery of offer is also wrapped after the opposite side of the incident side of photoelectric conversion layer forms second electrode
It includes: forming reflecting layer far from the side of the first protective layer in second electrode.
Optionally, the making material in reflecting layer can be highly reflective material, such as silver or aluminium, and the embodiment of the present application is to this
It is not limited in any way.
When the making material of photoelectric conversion layer is monocrystalline silicon thin film, the making material of the first protective layer and the second protective layer is
Making material when being silica of PDMS, anti-reflection layer, by when making solar battery, using oxygen plasma treatment the
One protective layer, the second protective layer and anti-reflection layer can make between the first protective layer and anti-reflection layer bonding, the first protective layer and the
It is bonded between bonding and the second protective layer and second electrode between two protective layers.
In the present embodiment, after PDMS is carried out oxygen plasma treatment, the surface of PDMS will form SiOx ,-OH group etc.
Polar group, oxygen plasma treatment make the-OSi (CH of PDMS surface portion3)2O- group is converted into-O4Si(OH)4Group,
Silicone hydroxyl increases, and improves the hydrophily of PDMS, so the first protective layer and the second protective layer be after closing up during placing,
Due to close contact condensation reaction may occur for the active silicone hydroxyl on these newly-generated surfaces, so as to cause the first protective layer
And second permanent bonding between protective layer.
In the present embodiment, a large amount of Si-O keys are contained on the surface of anti-reflection layer, after anti-reflection layer is carried out oxygen plasma treatment,
Si-O key is interrupted, to form a large amount of Si dangling bonds in anti-reflection layer surface, Si dangling bonds are by absorbing-OH base in air
Group, forms Si-OH key.Meanwhile by after PDMS progress oxygen plasma treatment, the surface of PDMS can introduce hydrophilic nmature-
OH group substitutes-CH group, so that PDMS surface exhibits be made to go out extremely strong hydrophilic nmature.PDMS after oxygen plasma treatment
With the silica after oxygen plasma treatment body, following reaction: 2Si-OH → Si- occurs between the Si-OH between surface both
O-Si+2H2O so that form firm Si-O key between anti-reflection layer and the first protective layer, so as to cause the first protective layer and
Permanent bonding between anti-reflection layer.
It in the present embodiment, has no special requirements to the bond strength between the second protective layer and second electrode, effect is main
It is protection solar battery, and by the permanent bonding action between the first protective layer and the second protective layer, by solar battery
It is clipped between the first protective layer and the second protective layer similar to sandwich structure, forms the preferable solar battery of mechanical endurance.
Using the making material when photoelectric conversion layer as monocrystalline silicon thin film, the making material of the first protective layer and the second protective layer
It is further illustrated provided by the embodiments of the present application for the making material of second electrode is silver or aluminium for dimethyl silicone polymer
The preparation method of solar battery.
Step S1, the first semiconductor material and the second semiconductor material are successively adulterated in the monocrystalline silicon thin film of SOI substrate,
The photoelectric conversion layer 10 including the first semiconductor layer 11 and the second semiconductor layer 12 is formed, as shown in Figure 6A.
Wherein, SOI substrate includes: the monocrystalline substrate 103 set gradually, insulating layer 102 and monocrystalline silicon thin film.It is optional
Ground, the monocrystalline substrate that SOI substrate includes with a thickness of 100~500 microns, insulating layer with a thickness of 5 nanometers~4 microns, it is single
Polycrystal silicon film with a thickness of 100~5000 nanometers.
Specifically, step S1 uses ion implantation technology under condition of high vacuum degree low temperature, high pressure accelerates Doped ions, obtains
The Doped ions of very big kinetic energy are directly entered in monocrystalline silicon thin film, then when eliminating by way of high annealing Doped ions injection
Some lattice defects are generated in monocrystalline silicon thin film.The doping concentration distribution of ion implanting is generally rendered as Gaussian Profile, and
Concentration highest point is not or not surface, at the certain depth within surface.Ion implanting depth is according to generally tens
Nanometer, such as 20 nanometers.
Capture S2, by the surface thermal oxide of the second semiconductor layer 12, specifically as shown in Figure 6B.
Step S3, first electrode 40 and anti-reflection layer 60 are sequentially formed on the second semiconductor layer 12 after thermal oxide, specifically
As shown in Figure 6 C.
Wherein, the second semiconductor layer 12 after thermal oxide sequentially forms the first electricity using evaporation process or depositing operation
Pole 40 forms anti-reflection layer 60 using depositing operation in first electrode 40.
It can be with it should be noted that if when the making material of first electrode 40 is ITO, in method provided in this embodiment
Do not form anti-reflection layer.
Step S4, anti-reflection layer and the first protection materials are subjected to corona treatment, by first after corona treatment
Protection materials are bonded with the anti-reflection layer after corona treatment, specific as shown in Figure 6 D to form the first protective layer.
Step S4, which is specifically included, pours into the first protection materials Synthesis liquid in the container for being placed with anti-reflection layer, stands solidification,
Form the first protective layer.
Step S5, using the monocrystalline substrate and insulating layer in wet-etching technology etching SOI substrate, specifically such as Fig. 6 E institute
Show.
Specifically, monocrystalline silicon lining of the step S5 using the potassium hydroxide KOH solution wet etching SOI substrate of concentration 23%
Bottom, wherein etch period is related with KOH concentration and solution temperature.In order to accelerate etch rate, can also add to etching solution
Temperature improves etch rate, then with hydrogen fluoride HF etching insulating layer.
The embodiment of the present application etching monocrystalline substrate and insulating layer can reduce the thickness of solar battery, in step s 5
First protective layer plays the role of protecting first electrode and anti-reflection layer.
Step S6, second electrode 50 is formed far from the side of the second semiconductor layer 12 in the first semiconductor layer 11, specifically such as
Shown in Fig. 6 F.
Specifically, forming second electrode 50 using evaporation process or depositing operation in step S6.Optionally, depositing operation packet
It includes: physical gas-phase deposition.
Step S7, the second protection materials are subjected to corona treatment, by the second protection materials after corona treatment
It is fitted in side of the second electrode 50 far from the first semiconductor layer 11, forms the second protective layer 30, it is specific as shown in Figure 6 G.
Attached drawing of the embodiment of the present invention is pertained only to the present embodiments relate to the structure arrived, and other structures, which can refer to, usually to be set
Meter.
For clarity, in the attached drawing of embodiment for describing the present invention, the thickness and size of layer or micro-structure
It is amplified.It is appreciated that ought such as layer, film, region or substrate etc element be referred to as be located at another element "above" or "below"
When, which " direct " can be located at "above" or "below" another element, or may exist intermediary element.
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not intended to limit the invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (15)
1. a kind of solar battery characterized by comprising photoelectric conversion layer, the first protective layer and the second protective layer；
First protective layer is located at the incident side of the photoelectric conversion layer, and second protective layer is located at the light conversion layer
The opposite side of incident side, first protective layer and described second protective layer used in encapsulating the photoelectric conversion layer.
2. solar battery according to claim 1, which is characterized in that first protective layer and second protective layer
Making material be insulation flexible clear materials.
3. solar battery according to claim 2, which is characterized in that the solar battery further include: first electrode
And second electrode；
The first electrode is located at the photoelectric conversion layer close to the side of first protective layer, and the second electrode is located at institute
Photoelectric conversion layer is stated close to the side of second protective layer.
4. solar battery according to claim 3, which is characterized in that the solar battery further include: anti-reflection layer, institute
State the reflection of light of the anti-reflection layer for reducing the photoelectric conversion layer described in directive；
The anti-reflection layer is located at the first electrode close to the side of first protective layer, and the refractive index of the anti-reflection layer is greater than
The refractive index of first protective layer, and it is less than the refractive index of the photoelectric conversion layer.
5. solar battery according to claim 3, which is characterized in that the making material of the first electrode includes:
Bright conductive material or metal, the first electrode with a thickness of 50~300 nanometers；
When the making material of the first electrode is metal, the first electrode is strip shaped electric poles or mesh electrode.
6. solar battery according to claim 2, which is characterized in that the solar battery further include: conductive particle,
The conductive particle is entrained in first protective layer；
The conductive particle includes: silver, nickel, carbon black, carbon nanotube or graphite.
7. solar battery according to claim 6, which is characterized in that the solar battery further include: second electrode；
The second electrode is located at the photoelectric conversion layer close to the side of second protective layer.
8. solar battery according to claim 3 or 7, which is characterized in that the refractive index of first protective layer is greater than
Air refraction, and it is less than the refractive index of the light conversion layer.
9. solar battery according to claim 3 or 7, which is characterized in that the making material of second battery includes:
Transparent conductive material or metal, the second electrode with a thickness of 70~300 nanometers.
10. solar battery according to claim 9, which is characterized in that the solar battery further include: reflecting layer,
The reflecting layer is used to reflect the light projected from the photoelectric conversion layer；
The reflecting layer is located at the second electrode close to the side of second protective layer.
11. solar battery according to claim 1, which is characterized in that the photoelectric conversion layer includes: the first semiconductor
Layer and the second semiconductor layer；
First semiconductor layer is p type semiconductor layer, and second semiconductor layer is n type semiconductor layer, alternatively, described first
Semiconductor layer is n type semiconductor layer, and second semiconductor layer is p type semiconductor layer.
12. a kind of electrical equipment characterized by comprising solar battery as claimed in any one of claims 1 to 11.
13. a kind of preparation method of solar battery, which is characterized in that be used to prepare as described in any one of claim 1~11
Solar battery, which comprises
Form photoelectric conversion layer；
The first protective layer is formed in the incident side of the photoelectric conversion layer；
The second protective layer, first protective layer and described second are formed in the opposite side of the incident side of the photoelectric conversion layer
It is protective layer used in encapsulating the photoelectric conversion layer.
14. according to the method for claim 13, which is characterized in that after the formation photoelectric conversion layer, the method is also
Include:
First electrode and anti-reflection layer are sequentially formed in the incident side of photoelectric conversion layer；
The incident side in the photoelectric conversion layer is formed after the first protective layer, the method also includes:
Second electrode is formed in the opposite side of the incident side of the photoelectric conversion layer.
15. according to the method for claim 14, which is characterized in that when the making material of the photoelectric conversion layer is monocrystalline silicon
When the making material of film, first protective layer and second protective layer is dimethyl silicone polymer, the formation photoelectricity
Conversion layer includes: that the first semiconductor material and the second semiconductor material are successively adulterated in the monocrystalline silicon thin film of SOI substrate, is formed
Photoelectric conversion layer including the first semiconductor layer and the second semiconductor layer；The SOI substrate includes: the monocrystalline silicon lining set gradually
Bottom, insulating layer and monocrystalline silicon thin film；
The incident side in photoelectric conversion layer sequentially forms first electrode and anti-reflection layer includes: by the surface of the second semiconductor layer
Thermal oxide；First electrode and anti-reflection layer are sequentially formed on the second semiconductor layer after thermal oxide；
The incident side in photoelectric conversion layer formed the first protective layer include: by anti-reflection layer and the first protection materials carry out etc. from
Daughter processing, the first protection materials after corona treatment is bonded with the anti-reflection layer after corona treatment, with shape
At the first protective layer；
It includes: exhausted using wet-etching technology etching that the opposite side of the incident side in photoelectric conversion layer, which forms second electrode,
Edge layer and monocrystalline substrate form second electrode far from the side of the second semiconductor layer in the first semiconductor layer；
It includes: to carry out the second protection materials etc. that the opposite side of the incident side in photoelectric conversion layer, which forms the second protective layer,
The second protection materials after corona treatment are fitted in one of second electrode far from the first semiconductor layer by gas ions processing
Side forms the second protective layer.
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| CN112563356A (en) * | 2019-09-10 | 2021-03-26 | 福建省辉锐电子技术有限公司 | Solar cell chip silica gel protection packaging structure and method |
| CN113120857A (en) * | 2021-04-14 | 2021-07-16 | 中国科学院上海微系统与信息技术研究所 | Preparation method of optical micro-nano structure |
| CN117692539A (en) * | 2023-06-09 | 2024-03-12 | 荣耀终端有限公司 | Rear cover of electronic equipment and electronic equipment |
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| CN111180594A (en) * | 2020-01-09 | 2020-05-19 | 吉林大学 | Composite film packaging method of perovskite solar cell |
| CN113120857A (en) * | 2021-04-14 | 2021-07-16 | 中国科学院上海微系统与信息技术研究所 | Preparation method of optical micro-nano structure |
| CN117692539A (en) * | 2023-06-09 | 2024-03-12 | 荣耀终端有限公司 | Rear cover of electronic equipment and electronic equipment |
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