CN110021589B - Power assembly and voltage conversion method - Google Patents
Power assembly and voltage conversion method Download PDFInfo
- Publication number
- CN110021589B CN110021589B CN201910372425.8A CN201910372425A CN110021589B CN 110021589 B CN110021589 B CN 110021589B CN 201910372425 A CN201910372425 A CN 201910372425A CN 110021589 B CN110021589 B CN 110021589B
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- insulated gate
- spring
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000011084 recovery Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a power component and a voltage conversion method. Wherein, this power module includes: the device comprises a driving plate, an insulated gate bipolar transistor and a spring resistor, wherein a first end of the spring resistor is connected with the driving plate, and a second end of the spring resistor is connected with a grid electrode of the insulated gate bipolar transistor. The invention solves the technical problem that the power component has large volume caused by the connection of the insulated gate bipolar transistor and the spring through the bonding wire in the existing power component.
Description
Technical Field
The invention relates to the field of electronic circuits, in particular to a power component and a voltage conversion method.
Background
The power module is a component which is prepared by re-filling and sealing power electronic devices according to a certain power combination. At present, the power module is an integrated power component taking an IGBT (Insulated Gate Bipolar Transistor ) as a core, and consists of the IGBT, a gate driving circuit and a protection circuit.
The spring power module is one of the power modules, and the common spring power module in the market at present utilizes spring connection to replace a welded and spliced power module. As shown in the schematic diagram of the spring power module in fig. 1, in order to adjust the uniformity of the gate driving of the IGBT, the power module generally uses a bonding wire to connect a resistor with a fixed resistance value, one end of the resistor is connected with one end of the spring, the other end of the resistor is connected with the gate (i.e., the G pole in fig. 1) of the IGBT through the bonding wire, the emitter of the IGBT is connected with the diode through the bonding wire, and the other end of the spring is connected with the driving board. In addition, the resistor, the IGBT and the diode are soldered to the substrate.
Because the paths of the external drive of the grid are different in length, the phenomenon of uneven flow is easy to occur, so that different IGBT of the paths are matched by adopting resistors with different resistance values to ensure the consistency of the on-off time of all IGBT, and the inconsistent on-off time of the IGBT caused by different paths is prevented, thereby causing the failure of the IGBT. As can be seen from fig. 1, since the resistors are connected with the IGBTs through bonding wires, especially when the number of IGBTs is large, the area of the power module is increased, the process is complex and complex, and the cost is high.
In view of the above problems, no effective solution has been proposed at present.
Disclosure of Invention
The embodiment of the invention provides a power component and a voltage conversion method, which are used for at least solving the technical problem that the power component is large in size due to the fact that an insulated gate bipolar transistor and a spring are connected through a bonding wire in the existing power component.
According to an aspect of an embodiment of the present invention, there is provided a power assembly including: the device comprises a driving plate, an insulated gate bipolar transistor and a spring resistor, wherein a first end of the spring resistor is connected with the driving plate, and a second end of the spring resistor is connected with a grid electrode of the insulated gate bipolar transistor.
Further, the resistance of the spring resistor is determined by the resistance of the gate resistor of the insulated gate bipolar transistor.
Further, the power assembly further comprises: and the anode of the diode is connected with the emitter of the insulated gate bipolar transistor through a bonding wire.
Further, the diode is a fast recovery diode.
Further, the power assembly further comprises: a substrate; the insulated gate bipolar transistor and the diode are welded on the substrate.
Further, the substrate is a ceramic-based copper-clad plate.
Further, the cathode of the diode is connected to the substrate.
According to another aspect of the embodiment of the invention, there is also provided an electric vehicle, including the power assembly described above, wherein the power assembly is used for converting voltage in the electric vehicle.
According to another aspect of the embodiment of the present invention, there is also provided a voltage conversion method, including: detecting the resistance of the gate resistor of the insulated gate bipolar transistor; determining a spring resistor according to the resistance value, wherein the spring resistor is arranged on the power assembly, a first end of the spring resistor is connected with the driving plate, and a second end of the spring resistor is connected with the grid electrode of the insulated gate bipolar transistor; the control power component converts the voltage.
Further, the voltage conversion method further includes: the power component is controlled to convert between alternating voltage and direct voltage; or controlling the power component to perform conversion between the first voltage and the second voltage, wherein the voltage value of the first voltage is different from the voltage value of the second voltage.
In the embodiment of the invention, a first end of the spring resistor is connected with the driving plate in a mode of connecting the driving plate with the insulated gate bipolar transistor, and a second end of the spring resistor is connected with the grid electrode of the insulated gate bipolar transistor. It is easy to note that the spring resistor not only has the connection function of the spring, but also has the fixed resistance value of the resistor, so that the spring resistor is adopted to replace bonding wires and resistors, the step of connecting bonding wires between the grid electrode of the insulated gate bipolar transistor and the resistor can be reduced, the area of the substrate and the cost of the power component are reduced, and the possibility of performance failure of the power component caused by welding fatigue of the device in the power component can be reduced.
Therefore, the scheme provided by the application achieves the aim of reducing the volume of the power component, thereby realizing the technical effects of improving the integration level of the power component and reducing the cost, and further solving the technical problem that the power component is large in volume due to the fact that the insulated gate bipolar transistor is connected with the spring through the bonding wire in the traditional power component.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a spring power module according to the prior art;
FIG. 2 is a schematic diagram of a power assembly according to an embodiment of the invention; and
Fig. 3 is a flowchart of a voltage conversion method according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1
According to an embodiment of the present invention, there is provided an embodiment of a power assembly, wherein fig. 2 is a schematic diagram of the power assembly according to the embodiment of the present invention, and as shown in fig. 2, the power assembly includes: the drive plate 10, the insulated gate bipolar transistor 20 and the spring resistor 30, wherein a first end of the spring resistor is connected with the drive plate, and a second end of the spring resistor is connected with the gate 21 of the insulated gate bipolar transistor.
Alternatively, the drive plate may be controlled by adjusting the voltage or current of the input spring resistor. The spring resistor is a device having dual-metallic properties, i.e., the spring resistor can be used to connect the drive plate and the insulated gate bipolar transistor (i.e., IGBT) as a normal spring, and has a certain resistance value, wherein the resistance value of the spring resistor is determined by the resistance value of the gate resistor of the insulated gate bipolar transistor, i.e., the resistance value of the spring resistor matches the resistance value of the gate resistor of the insulated gate bipolar transistor.
Therefore, in practical application, the spring resistors with different resistance values can be directly replaced according to the requirements of different grid resistors of customers, and compared with the mode of connecting the resistors through bonding wires in the prior art, the scheme provided by the application does not need to detach, install the resistors and the bonding wires, reduces welding points, increases the reliability of the power component, and is simpler to operate and stronger in flexibility.
Further, compared with the existing welding and inserting modes, the application has the advantages that the driving plate and the insulated gate bipolar transistor are connected through the spring resistor, so that the welding fatigue can be reduced, the service life of components is prolonged, and the impact resistance and the vibration performance of the power assembly can be improved through the connection of the spring resistor.
As is clear from the above, the first end of the spring resistor is connected to the driving plate and the second end of the spring resistor is connected to the gate of the insulated gate bipolar transistor by connecting the driving plate to the insulated gate bipolar transistor. It is easy to note that the spring resistor not only has the connection function of the spring, but also has the fixed resistance value of the resistor, so that the spring resistor is adopted to replace bonding wires and resistors, the step of connecting bonding wires between the grid electrode of the insulated gate bipolar transistor and the resistor can be reduced, the area of the substrate and the cost of the power component are reduced, and the possibility of performance failure of the power component caused by welding fatigue of the device in the power component can be reduced.
Therefore, the scheme provided by the application achieves the aim of reducing the volume of the power component, thereby realizing the technical effects of improving the integration level of the power component and reducing the cost, and further solving the technical problem that the power component is large in volume due to the fact that the insulated gate bipolar transistor is connected with the spring through the bonding wire in the traditional power component.
In an alternative embodiment, as shown in fig. 2, the power assembly further comprises: the diode 40 and the substrate 50, wherein the anode of the diode is connected with the emitter of the insulated gate bipolar transistor through the bonding wire, the insulated gate bipolar transistor and the diode are welded on the substrate, and the cathode of the diode is connected with the substrate.
Optionally, the diode is a fast recovery diode (Fast recovery diode, abbreviated as FRD), where the fast recovery diode is a semiconductor diode with good switching characteristics and short reverse recovery time, and can be applied to circuits such as a switching power supply, a pulse width modulator, a frequency converter, and the like, and used as a high-frequency rectifying diode, a freewheeling diode, or a damping diode. Preferably, a fast recovery diode is used as a freewheeling diode in the present application.
Optionally, the substrate is a ceramic-based copper-clad plate (i.e. DCB), wherein the ceramic-based copper-clad plate has excellent electrical insulation performance, high heat conduction property and larger current carrying capacity.
According to another aspect of the embodiment of the invention, there is also provided an electric vehicle, including the power assembly described above, wherein the power assembly is used for converting voltage in the electric vehicle.
Alternatively, the power component is applied to an electric vehicle, and may be used for performing voltage conversion on a voltage value of an input power component, including but not limited to conversion between ac and dc voltages, and conversion between different voltage values, for example, the power component converts a dc voltage into an ac voltage, or converts an ac voltage into a dc voltage, or converts a high voltage (dc or ac) into a low voltage (dc or ac), or converts a low voltage (dc or ac) into a high voltage (dc or ac).
Therefore, the scheme provided by the application adopts the spring resistor to replace the external resistor, so that the step of bonding wires between the grid electrode of the insulated gate bipolar transistor and the external resistor is reduced, and the possibility of failure of a power component caused by welding fatigue of a device is reduced. In addition, the spring resistor is adopted to replace an external resistor, and the spring resistor is adopted to replace a bonding wire and a resistor, so that the area of a substrate can be reduced, and the module cost is reduced. In the scheme provided by the application, the spring resistors with different resistance values can be directly replaced according to different grid resistor requirements of customers, the operation is simple, and the flexibility is higher.
Example 2
In accordance with an embodiment of the present invention, there is also provided an embodiment of a voltage conversion method, it being noted that the steps shown in the flowchart of the figures may be performed in a computer system, such as a set of computer executable instructions, and, although a logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in an order other than that shown or described herein.
Fig. 3 is a flowchart of a voltage conversion method according to an embodiment of the present invention, as shown in fig. 3, the method including the steps of:
Step S302, detecting the resistance of the gate resistor of the insulated gate bipolar transistor;
Step S304, determining a spring resistor according to the resistance value, wherein the spring resistor is arranged on the power component, the first end of the spring resistor is connected with the driving plate, and the second end of the spring resistor is connected with the grid electrode of the insulated gate bipolar transistor;
in step S306, the power component is controlled to convert the voltage.
Alternatively, a production system for producing electric vehicles can perform the voltage conversion method provided by the application. The production system can automatically produce all parts of the electric vehicle, wherein all parts of the electric vehicle at least comprise a power assembly.
In an alternative embodiment, to ensure uniformity of on-off times of the insulated gate bipolar transistors in the power assembly, it is necessary to ensure that the resistance of the gate resistors of the insulated gate bipolar transistors matches the resistance of the spring resistors. Therefore, in the process of producing the power component, the production system firstly detects the resistance value of the grid resistor of the insulated gate bipolar transistor, then determines the corresponding resistance value of the spring resistor from the resistance value, and further determines the corresponding spring resistor. Optionally, the spring resistors with different resistance values are located in different areas, and after the corresponding resistance value of the spring resistor is determined, the production system controls the controller of the different areas to output the spring resistor, or the production system controls the conveying equipment to grasp the spring resistor from the different areas. After the spring resistor is obtained, the production system welds the insulated gate bipolar transistor, the driving plate and the spring resistor according to a preset sequence, so that the power assembly is obtained. Further, after the power component is obtained, the production system tests the power component, and inputs voltage to the power component so that the power component converts the voltage.
Optionally, the production system controls the power component to convert the voltage, including: controlling the power component to convert between an alternating voltage and a direct voltage, for example, converting the direct voltage into the alternating voltage or converting the alternating voltage into the direct voltage; or the power component is controlled to convert between a first voltage and a second voltage, for example, to convert a high voltage (direct current or alternating current) to a low voltage (direct current or alternating current) or to convert a low voltage (direct current or alternating current) to a high voltage (direct current or alternating current). The voltage value of the first voltage is different from the voltage value of the second voltage.
As is clear from the above, the first end of the spring resistor is connected to the driving plate and the second end of the spring resistor is connected to the gate of the insulated gate bipolar transistor by connecting the driving plate to the insulated gate bipolar transistor. It is easy to note that the spring resistor not only has the connection function of the spring, but also has the fixed resistance value of the resistor, so that the spring resistor is adopted to replace bonding wires and resistors, the step of connecting bonding wires between the grid electrode of the insulated gate bipolar transistor and the resistor can be reduced, the area of the substrate and the cost of the power component are reduced, and the possibility of performance failure of the power component caused by welding fatigue of the device in the power component can be reduced.
Therefore, the scheme provided by the application achieves the aim of reducing the volume of the power component, thereby realizing the technical effects of improving the integration level of the power component and reducing the cost, and further solving the technical problem that the power component is large in volume due to the fact that the insulated gate bipolar transistor is connected with the spring through the bonding wire in the traditional power component.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
In the foregoing embodiments of the present invention, the descriptions of the embodiments are emphasized, and for a portion of this disclosure that is not described in detail in this embodiment, reference is made to the related descriptions of other embodiments.
In the several embodiments provided in the present application, it should be understood that the disclosed technology may be implemented in other manners. The above-described embodiments of the apparatus are merely exemplary, and the division of the units, for example, may be a logic function division, and may be implemented in another manner, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some interfaces, units or modules, or may be in electrical or other forms.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied essentially or in part or all of the technical solution or in part in the form of a software product stored in a storage medium, including instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a usb disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a removable hard disk, a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (6)
1. A power assembly, comprising: drive plate and insulated gate bipolar transistor, its characterized in that, power module still includes:
A first end of the spring resistor is connected with the driving plate, and a second end of the spring resistor is connected with the grid electrode of the insulated gate bipolar transistor, wherein the spring resistor is a device with double metal, and the resistance value of the spring resistor is determined by the resistance value of the grid electrode resistor of the insulated gate bipolar transistor;
The drive plate is used for controlling the insulated gate bipolar transistor by adjusting the voltage or current of the input spring resistor;
the power assembly further includes: the anode of the diode is connected with the emitter of the insulated gate bipolar transistor through a bonding wire;
The power assembly further includes: a substrate; the insulated gate bipolar transistor and the diode are welded on the substrate; the cathode of the diode is connected with the substrate.
2. The power assembly of claim 1, wherein the diode is a fast recovery diode.
3. The power assembly of claim 1, wherein the substrate is a ceramic-based copper-clad plate.
4. An electric vehicle comprising the power assembly of any one of claims 1 to 3, wherein the power assembly is used in the electric vehicle to convert a voltage.
5. A voltage conversion method applied to the power module of any one of claims 1 to 3, comprising:
detecting the resistance of the gate resistor of the insulated gate bipolar transistor;
Determining a spring resistor according to the resistance value, wherein the spring resistor is arranged on a power component, a first end of the spring resistor is connected with a driving plate, a second end of the spring resistor is connected with a grid electrode of the insulated gate bipolar transistor, the spring resistor is a device with double metals, and the driving plate is used for controlling the insulated gate bipolar transistor by adjusting voltage or current input into the spring resistor;
and controlling the power component to convert the voltage.
6. The voltage conversion method according to claim 5, wherein controlling the power component to convert a voltage comprises:
Controlling the power component to convert between alternating voltage and direct voltage; or alternatively
And controlling the power component to perform conversion between a first voltage and a second voltage, wherein the voltage value of the first voltage is different from the voltage value of the second voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372425.8A CN110021589B (en) | 2019-05-06 | 2019-05-06 | Power assembly and voltage conversion method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910372425.8A CN110021589B (en) | 2019-05-06 | 2019-05-06 | Power assembly and voltage conversion method |
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| CN110021589A CN110021589A (en) | 2019-07-16 |
| CN110021589B true CN110021589B (en) | 2024-05-28 |
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| CN201910372425.8A Active CN110021589B (en) | 2019-05-06 | 2019-05-06 | Power assembly and voltage conversion method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117038660A (en) * | 2023-07-20 | 2023-11-10 | 广东芯聚能半导体有限公司 | Gate resistor driving structure, manufacturing method thereof and power semiconductor module |
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| US4922376A (en) * | 1989-04-10 | 1990-05-01 | Unistructure, Inc. | Spring grid array interconnection for active microelectronic elements |
| CN1665003A (en) * | 2005-03-14 | 2005-09-07 | 西安交通大学 | Method for making crimping interconnection technology based power electronic integrated module |
| KR20100067918A (en) * | 2008-12-12 | 2010-06-22 | 한양대학교 산학협력단 | Package using nanospring or microspring and method of fabricating the same |
| JP2012227455A (en) * | 2011-04-22 | 2012-11-15 | Meidensha Corp | Semiconductor module |
| CN203288576U (en) * | 2012-03-02 | 2013-11-13 | 赛米控电子股份有限公司 | System with power semiconductor module and driving device |
| CN209641656U (en) * | 2019-05-06 | 2019-11-15 | 珠海格力电器股份有限公司 | (PCC) power and electric vehicle |
| CN116565007A (en) * | 2023-05-24 | 2023-08-08 | 华北电力大学 | High-voltage high-power crimping device packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6930385B2 (en) * | 2002-12-20 | 2005-08-16 | Ut-Battelle, Llc | Cascaded die mountings with spring-loaded contact-bond options |
| US7029288B2 (en) * | 2003-03-24 | 2006-04-18 | Che-Yu Li | Electrical contact and connector and method of manufacture |
| US7304376B2 (en) * | 2003-07-30 | 2007-12-04 | Tessers, Inc. | Microelectronic assemblies with springs |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922376A (en) * | 1989-04-10 | 1990-05-01 | Unistructure, Inc. | Spring grid array interconnection for active microelectronic elements |
| CN1665003A (en) * | 2005-03-14 | 2005-09-07 | 西安交通大学 | Method for making crimping interconnection technology based power electronic integrated module |
| KR20100067918A (en) * | 2008-12-12 | 2010-06-22 | 한양대학교 산학협력단 | Package using nanospring or microspring and method of fabricating the same |
| JP2012227455A (en) * | 2011-04-22 | 2012-11-15 | Meidensha Corp | Semiconductor module |
| CN203288576U (en) * | 2012-03-02 | 2013-11-13 | 赛米控电子股份有限公司 | System with power semiconductor module and driving device |
| CN209641656U (en) * | 2019-05-06 | 2019-11-15 | 珠海格力电器股份有限公司 | (PCC) power and electric vehicle |
| CN116565007A (en) * | 2023-05-24 | 2023-08-08 | 华北电力大学 | High-voltage high-power crimping device packaging structure |
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| CN110021589A (en) | 2019-07-16 |
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