CN110021323A - The data storage device and system that write-once is repeatedly read - Google Patents
The data storage device and system that write-once is repeatedly read Download PDFInfo
- Publication number
- CN110021323A CN110021323A CN201810023637.0A CN201810023637A CN110021323A CN 110021323 A CN110021323 A CN 110021323A CN 201810023637 A CN201810023637 A CN 201810023637A CN 110021323 A CN110021323 A CN 110021323A
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- Prior art keywords
- storage unit
- data
- electric signal
- transistor
- storage device
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
Abstract
The invention discloses a kind of data storage device that write-once is repeatedly read and systems.Wherein, which includes: storage unit, for storing data；And isolator, connection of connecting with storage unit do not allow the second polarity electric signal to pass through storage unit, wherein the first polarity electric signal is opposite with the second polarity electric signal polarity for allowing the first polarity electric signal by storage unit；Transistor is connected in series with storage unit and isolator, for providing the first polarity electric signal and the second polarity electric signal.The present invention is solved the relevant technologies and is repeatedly read the technical problem for causing reading data relatively difficult using hard breakdown mode reality write-once.
Description
Technical field
The present invention relates to electronic field, in particular to a kind of data storage device that write-once is repeatedly read and
System.
Background technique
Electronic data modification is got up relatively easily, and will not leave behind too many modification trace.As each mechanism is more and more
Ground relies on electronic data, these data how to be protected not become more and more important by mistakenly modification.In order to protect electronic data
It is not modified, a kind of method that can be used is to carry out storing data in a manner of single-write and multiple-read (WORM) storage.Many enterprises are single
Position such as financial service relies on some form of WORM storage to store critical data.WORM function can guarantee data for a long time not
Become, realizes that WORM is stored usually using optical storage.Optical storage is recorded in the luminous point of laser beam focus submicron order
On CD media, laser beam read-out recording information can be used.Optical R/W is nose heave, when the addressing speed of optical head makes reading and writing data
Between it is slow；CD, which easily scratches destruction, can not read data；And the theoretical storage density of CD is relatively low, and capacity is smaller.
Currently, the relevant technologies propose the technology for realizing WORM based on RRAM, accumulation layer resistance is set to tend to be infinitely great using hard breakdown mode
As high-impedance state in storage.The relevant technologies also propose the technology that WORM is realized based on MTJ hard breakdown mode.But above-mentioned technology
Because being off state, read current is smaller, and it is relatively difficult to read data；Hard breakdown accumulation layer or MTJ layers of needs are very big
Electric current, this requires transistor power supply capacity relatively high.
Repeatedly being read for the relevant technologies using hard breakdown mode reality write-once is led to reading data is relatively difficult asks
Topic, currently no effective solution has been proposed.
Summary of the invention
The embodiment of the invention provides a kind of data storage device that write-once is repeatedly read and systems, at least to solve
The relevant technologies are repeatedly read using hard breakdown mode reality write-once leads to read the relatively difficult technical problem of data.
According to an aspect of an embodiment of the present invention, a kind of data storage device that write-once is repeatedly read is provided,
It include: storage unit, for storing data；And isolator, connection of connecting with the storage unit, for allowing the first polarity
Electric signal does not allow the second polarity electric signal to pass through the storage unit by the storage unit, wherein first polarity
Electric signal is opposite with the second polarity electric signal polarity；Transistor, company of connecting with the storage unit and the isolator
It connects, is used to provide the described the first polarity electric signal and the second polarity electric signal.
Further, the isolator is diode.
Further, the anode of the diode is connected with the source electrode of the transistor, the cathode of the diode with
The storage unit is connected.
Further, the anode of the diode is connected with the storage unit, the cathode of the diode with it is described
The source electrode of transistor is connected.
Further, the first end of the storage unit is connected with the anode of the diode, the storage unit
Second end is connected with the source electrode of the transistor.
Further, the first end of the storage unit is connected with the cathode of the diode, the storage unit
Second end is connected with the source electrode of the transistor.
Further, the storage unit include at least it is following any one: resistive memory cell；Magneto-resistor storage is single
Member；Ferroelectric storage unit.
Further, the storage unit is that bipolarity resistive memory cell or spin-torque shift magnetic tunnel junction.
According to another aspect of an embodiment of the present invention, a kind of data that write-once is repeatedly read storage system is additionally provided
System, the data-storage system have multilayered structure, wherein every layer in the multilayered structure includes that at least one present invention is real
Apply data storage device described in any one of example.
Further, the data-storage system further include: the first wordline is connected to the grid of the transistor in every layer
Pole；First bit line is connected to the drain electrode of the transistor in first layer, wherein the multilayered structure includes the first layer；
Second bit line, the isolator being connected in the first layer.
In embodiments of the present invention, the data storage device that write-once is repeatedly read includes: storage unit, for storing
Data；And isolator, connection of connecting with storage unit do not allow for allowing the first polarity electric signal by storage unit
Second polarity electric signal passes through storage unit, wherein the first polarity electric signal is opposite with the second polarity electric signal polarity；Crystal
Pipe is connected in series with storage unit and isolator, for providing the first polarity electric signal and the second polarity electric signal.The number
Realize that write-once is repeatedly read based on the electric current one-way performance of isolator according to memory device, since isolator has current limit
The function in direction, storage unit can only unidirectionally be written or erasing operation, thus achieve the purpose that write-once is repeatedly read, into
And solving the relevant technologies and repeatedly being read using hard breakdown mode reality write-once causes the relatively difficult technology of reading data to be asked
Topic is more easier so that reading data, and the lower technical effect of power consumption.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes part of this application, this hair
Bright illustrative embodiments and their description are used to explain the present invention, and are not constituted improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the signal for the data storage device that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
Figure；
Fig. 2 is showing for the data storage device that another optional write-once according to an embodiment of the present invention is repeatedly read
It is intended to；
Fig. 3 is showing for the data storage device that another optional write-once according to an embodiment of the present invention is repeatedly read
It is intended to；
Fig. 4 is showing for the data storage device that another optional write-once according to an embodiment of the present invention is repeatedly read
It is intended to；
Fig. 5 is the signal for the data-storage system that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
Figure；And
Fig. 6 is the list in the data-storage system that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
The schematic diagram of a structural unit.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein can in addition to illustrating herein or
Sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that cover
Cover it is non-exclusive include, for example, the process, method, system, product or equipment for containing a series of steps or units are not necessarily limited to
Step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, product
Or other step or units that equipment is intrinsic.
According to embodiments of the present invention, a kind of embodiment of data storage device that write-once is repeatedly read is provided.It needs
It is noted that the function that write-once is repeatedly read may be implemented in the data storage device.
Fig. 1 is the signal for the data storage device that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
Figure, as shown in Figure 1, the data storage device may include: storage unit 10, isolator 20 and transistor 30, wherein storage
Unit 10, isolator 20 and transistor 30 are connected in series.
Storage unit 10, can be used for storing data.Optionally, storage unit 10 at least may include following any one
Kind: resistive memory cell；Magnetoresistive memory cell；Ferroelectric storage unit.Wherein, resistive memory cell can be bipolar
Property resistive memory cell, magnetoresistive memory cell can for spin-torque shift magnetic tunnel junction.It should be noted that this hair
Storage unit 10 in bright embodiment can also be other types, no longer illustrate one by one herein.
Isolator 20 can be connected in series with storage unit 10, for allowing the first polarity electric signal to pass through storage unit
10, do not allow the second polarity electric signal to pass through storage unit 10, wherein the first polarity electric signal and the second polarity electric signal polarity
On the contrary.That is, isolator 20, which has one direction electric current, passes through characteristic.Optionally, isolator 20 can be diode, two poles
Pipe has one direction electric current by characteristic, and structure is simple, and cost is relatively low.
Transistor 30 is connected in series with storage unit 10 and isolator 20, for provide the first polarity electric signal and
Second polarity electric signal.
As a kind of optional embodiment, storage unit 10, isolator 20 (by taking diode as an example) and transistor 30 it
Between series connection relationship may include following four situation, specifically:
As shown in Figure 1, the anode of diode is connected with the source electrode of transistor, the cathode of diode is connected with storage unit
It connects.
As shown in Fig. 2, the anode of diode is connected with storage unit, the cathode of diode is connected with the source electrode of transistor
It connects.
As shown in figure 3, the first end of storage unit is connected with the anode of diode, the second end and crystal of storage unit
The source electrode of pipe is connected.
As shown in figure 4, the first end of storage unit is connected with the cathode of diode, the second end and crystal of storage unit
The source electrode of pipe is connected.
It describes in detail below in conjunction with data storage device of the specific example to the embodiment of the present invention:
Storage unit 10 is bipolarity resistance-type memory-RRAM
(1) the initial resistance state of storage unit is high-impedance state.When bipolarity resistive memory cell is forward direction set, two
Pole pipe and storage unit connection type are as shown in figures 1 and 3, and electric current is only capable of flowing from bottom to top, and storage unit forms conductive logical
Road, Resistance states are changed into low resistance state by high-impedance state；Ambipolar resistive memory cell, which needs to apply reverse current, can just make to deposit
Storage unit is changed into high-impedance state from low resistance state, and the unidirectional passability of the electric current of diode prevents the reset process of storage unit.
(2) the initial resistance state of storage unit is high-impedance state.When bipolarity resistive memory cell is negative sense set, two
Pole pipe and storage unit connection type are as shown in Figure 2 and Figure 4, and electric current is only capable of flowing from the top to the bottom, and storage unit forms conductive logical
Road, Resistance states are changed into low resistance state by high-impedance state；Ambipolar resistive memory cell, which needs to apply reverse current, can just make to deposit
Storage unit is changed into high-impedance state from low resistance state, and the unidirectional passability of the electric current of diode prevents the reset process of storage unit.
Storage unit is magnetic tunnel junction MTJ
(3) direction of magnetization of free layer and reference layer by magnetic field is initialized as parallel state or anti-parallel state in MTJ.Two
Pole pipe and MTJ connection type are as shown in figures 1 and 3, and electric current is only capable of flowing from bottom to top, due to being based on spin polarization mode MTJ
Write current and erasing electric current it is reversed each other, therefore storage unit MTJ can only be written or be wiped one-sided operation.
The direction of magnetization original state of free layer and reference layer is parastate in MTJ, then can carrying out write operation, (Resistance states are by low-resistance
State is changed into high-impedance state)；If it is antiparallel state, can carrying out erase status, (Resistance states are changed into low-resistance by high-impedance state
State).
(4) direction of magnetization of free layer and reference layer by magnetic field is initialized as parallel state or anti-parallel state in MTJ.Two
Pole pipe and MTJ connection type are as shown in Figure 2 and Figure 4, and electric current is only capable of flowing from the top to the bottom, due to being based on spin polarization mode MTJ
Write current and erasing electric current it is reversed each other, therefore storage unit MTJ can only be written or be wiped one-sided operation.
The direction of magnetization original state of free layer and reference layer is parastate in MTJ, then can carrying out write operation, (Resistance states are by low-resistance
State is changed into high-impedance state)；If it is antiparallel state, can carrying out erase status, (Resistance states are changed into low-resistance by high-impedance state
State).
Storage unit is ferroelectric-FeRAM
(5) polarized state of storage unit ferroelectric material at the beginning 0.Diode and ferroelectric storage cell connection type are such as
Shown in Fig. 1 and Fig. 3, electric current is only capable of flowing from bottom to top, and the polarization direction of the ferroelectric storage cell after data are written is upward, two poles
The electric current one-way of pipe prevents the reset current of reverse polarization ferroelectric storage cell.
(6) polarized state of storage unit ferroelectric material at the beginning 0.Diode and ferroelectric storage cell connection type are such as
Shown in Fig. 2 and Fig. 4, electric current is only capable of flowing from the top to the bottom, and the polarization direction in ferroelectric storage cell after data are written is downward, and two
The electric current one-way of pole pipe prevents the reset current of reverse polarization ferroelectric storage cell.
According to embodiments of the present invention, a kind of data-storage system that write-once is repeatedly read is additionally provided.
Fig. 5 is the signal for the data-storage system that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
Figure, as shown in figure 5, the data-storage system can have multilayered structure (only showing double-layer structure in Fig. 5), wherein multilayer knot
Every layer in structure includes any one data storage device at least one the above embodiment of the present invention.
Optionally, which can also include: the first wordline, be connected to the grid of the transistor in every layer；
First bit line is connected to the drain electrode of the transistor in first layer；Second bit line, the isolator being connected in first layer.Wherein, more
Layer structure may include first layer, and first layer herein can be any one layer in multilayered structure.
As shown in figure 5, the first wordline WL1a and WL1b be connected respectively to the first rowed transistor to and the second rowed transistor
Pair grid, the first bit line BL1a be commonly connected to the first row transistor interconnection drain electrode, the second public company of bit line BL2a
It is connected to the diode for being arranged in the first row.Similarly, for the second row, it is mutual that the first bit line BL1b is commonly connected to the second row transistor
The drain electrode being connected, the second bit line BL2b are commonly connected to the diode for being arranged in the second row.Although storage unit is arranged in Fig. 5
Arrange into two rows, it is clear that the data-storage system may include the structure that multiple dimension cells are placed in a line.
Fig. 6 is the list in the data-storage system that a kind of optional write-once according to an embodiment of the present invention is repeatedly read
The schematic diagram of a structural unit, as shown in fig. 6, the drain electrode of BL1 connection transistor, the grid of WL1 connection transistor.Diode one
End connection storage unit, the other end connect BL2, and diode allows upward electric current, but forbids downward electric current.Data storage
It is unit that structure shown in fig. 6, which can be used, in system, which is arranged in array composition data-storage system.
The present invention is that the function that write-once is repeatedly read is realized in the electric current one-way ability design based on isolator, due to
Isolator itself has the function in current limit direction, and storage unit can only unidirectionally write/erase be operated, once be write to realize
Enter the function of repeatedly reading.Compared with the WORM of RRAM hard breakdown mode, operated without high current, power consumption is lower, to transistor
Power supply capacity require it is lower.Furthermore the WORM of RRAM hard breakdown mode is off state, and read current is smaller, data are read
It is relatively difficult, and scheme proposed by the present invention, it reads data and is easier.
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
In the above embodiment of the invention, it all emphasizes particularly on different fields to the description of each embodiment, does not have in some embodiment
The part of detailed description, reference can be made to the related descriptions of other embodiments.
In several embodiments provided herein, it should be understood that disclosed technology contents can pass through others
Mode is realized.Wherein, the apparatus embodiments described above are merely exemplary, such as the division of the unit, Ke Yiwei
A kind of logical function partition, there may be another division manner in actual implementation, for example, multiple units or components can combine or
Person is desirably integrated into another system, or some features can be ignored or not executed.Another point, shown or discussed is mutual
Between coupling, direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or communication link of unit or module
It connects, can be electrical or other forms.
The unit as illustrated by the separation member may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, it can and it is in one place, or may be distributed over multiple
On unit.It can some or all of the units may be selected to achieve the purpose of the solution of this embodiment according to the actual needs.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.Above-mentioned integrated list
Member both can take the form of hardware realization, can also realize in the form of software functional units.
If the integrated unit is realized in the form of SFU software functional unit and sells or use as independent product
When, it can store in a computer readable storage medium.Based on this understanding, technical solution of the present invention is substantially
The all or part of the part that contributes to existing technology or the technical solution can be in the form of software products in other words
It embodies, which is stored in a storage medium, including some instructions are used so that a computer
Equipment (can for personal computer, server or network equipment etc.) execute each embodiment the method for the present invention whole or
Part steps.And storage medium above-mentioned includes: that USB flash disk, read-only memory (ROM, Read-Only Memory), arbitrary access are deposited
Reservoir (RAM, Random Access Memory), mobile hard disk, magnetic or disk etc. be various to can store program code
Medium.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of data storage device that write-once is repeatedly read characterized by comprising
Storage unit, for storing data；
Isolator, connection of connecting with the storage unit are not permitted for allowing the first polarity electric signal by the storage unit
Perhaps the second polarity electric signal passes through the storage unit, wherein the first polarity electric signal and the second polarity electric signal
Polarity is opposite；
Transistor is connected in series with the storage unit and the isolator, be used to provide the described the first polarity electric signal with
And the second polarity electric signal.
2. data storage device according to claim 1, which is characterized in that the isolator is diode.
3. data storage device according to claim 2, which is characterized in that the anode of the diode and the transistor
Source electrode be connected, the cathode of the diode is connected with the storage unit.
4. data storage device according to claim 2, which is characterized in that the anode of the diode and the storage are single
Member is connected, and the cathode of the diode is connected with the source electrode of the transistor.
5. data storage device according to claim 2, which is characterized in that the first end of the storage unit and described two
The anode of pole pipe is connected, and the second end of the storage unit is connected with the source electrode of the transistor.
6. data storage device according to claim 2, which is characterized in that the first end of the storage unit and described two
The cathode of pole pipe is connected, and the second end of the storage unit is connected with the source electrode of the transistor.
7. data storage device according to any one of claim 1 to 6, which is characterized in that the storage unit is at least
It includes any of the following:
Resistive memory cell；
Magnetoresistive memory cell；
Ferroelectric storage unit.
8. data storage device according to any one of claim 1 to 6, which is characterized in that the storage unit is double
Polarity resistive memory cell or spin-torque shift magnetic tunnel junction.
9. a kind of data-storage system that write-once is repeatedly read, which is characterized in that the data-storage system has multilayer
Structure, wherein every layer in the multilayered structure includes at least one data storage described in any item of the claim 1 to 8
Device.
10. data-storage system according to claim 9, which is characterized in that the data-storage system further include:
First wordline is connected to the grid of the transistor in every layer；
First bit line is connected to the drain electrode of the transistor in first layer, wherein the multilayered structure includes described first
Layer；
Second bit line, the isolator being connected in the first layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810023637.0A CN110021323A (en) | 2018-01-10 | 2018-01-10 | The data storage device and system that write-once is repeatedly read |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810023637.0A CN110021323A (en) | 2018-01-10 | 2018-01-10 | The data storage device and system that write-once is repeatedly read |
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| CN110021323A true CN110021323A (en) | 2019-07-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054034A (en) * | 2020-09-15 | 2020-12-08 | 中国科学院微电子研究所 | Memory device |
| WO2022062264A1 (en) * | 2020-09-24 | 2022-03-31 | 浙江驰拓科技有限公司 | Storage element, storage circuit, data access method, and data access apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1421866A (en) * | 2001-11-29 | 2003-06-04 | 株式会社东芝 | Magnetic random access storage device and its read-out circuit and producing method thereof |
| US20030209971A1 (en) * | 2000-02-11 | 2003-11-13 | Kozicki Michael N. | Programmable structure, an array including the structure, and methods of forming the same |
| KR20100052886A (en) * | 2008-11-11 | 2010-05-20 | 주식회사 하이닉스반도체 | Phase change memory device and verification method of programming current for it |
| US20110182114A1 (en) * | 2010-01-28 | 2011-07-28 | Hynix Semiconductor Inc. | Semiconductor memory device and control method thereof |
| CN102473448A (en) * | 2009-07-10 | 2012-05-23 | 希捷科技有限公司 | Non-volatile memory array with resistive sense element block erase and uni-directional write |
| CN107004435A (en) * | 2008-08-14 | 2017-08-01 | 南泰若股份有限公司 | Method for carrying out dynamic access and programming to electro-resistance element array |
-
2018
- 2018-01-10 CN CN201810023637.0A patent/CN110021323A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030209971A1 (en) * | 2000-02-11 | 2003-11-13 | Kozicki Michael N. | Programmable structure, an array including the structure, and methods of forming the same |
| CN1421866A (en) * | 2001-11-29 | 2003-06-04 | 株式会社东芝 | Magnetic random access storage device and its read-out circuit and producing method thereof |
| CN107004435A (en) * | 2008-08-14 | 2017-08-01 | 南泰若股份有限公司 | Method for carrying out dynamic access and programming to electro-resistance element array |
| KR20100052886A (en) * | 2008-11-11 | 2010-05-20 | 주식회사 하이닉스반도체 | Phase change memory device and verification method of programming current for it |
| CN102473448A (en) * | 2009-07-10 | 2012-05-23 | 希捷科技有限公司 | Non-volatile memory array with resistive sense element block erase and uni-directional write |
| US20110182114A1 (en) * | 2010-01-28 | 2011-07-28 | Hynix Semiconductor Inc. | Semiconductor memory device and control method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 邓颖: "《MSP430FRAM铁电单片机原理及C程序设计》", 31 August 2012, 北京航空航天大学出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054034A (en) * | 2020-09-15 | 2020-12-08 | 中国科学院微电子研究所 | Memory device |
| WO2022062264A1 (en) * | 2020-09-24 | 2022-03-31 | 浙江驰拓科技有限公司 | Storage element, storage circuit, data access method, and data access apparatus |
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Application publication date: 20190716 |