CN110010738A - Semiconductor light-emitting elements and its manufacturing method - Google Patents
Semiconductor light-emitting elements and its manufacturing method Download PDFInfo
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- CN110010738A CN110010738A CN201910348405.7A CN201910348405A CN110010738A CN 110010738 A CN110010738 A CN 110010738A CN 201910348405 A CN201910348405 A CN 201910348405A CN 110010738 A CN110010738 A CN 110010738A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Abstract
The present invention relates to a kind of semiconductor light-emitting elements and its manufacturing methods.The semiconductor light-emitting elements, it include: light emitting structure, it includes acting the first type semiconductor layer stacked gradually, active layer, the second type semiconductor layer from below, has the electrode hole for penetrating through the active layer and second type semiconductor layer and exposing first type semiconductor layer；Second type electrode is electrically connected with second type semiconductor layer；First type electrode is electrically connected by the electrode hole and first type semiconductor layer；First type and second type electrode are finger-type electrode, in order to cut off electric current from the first type electrode and second type electrode inflow active layer and thereunder configured with the first insulating film and the second insulating film.Semiconductor light-emitting elements structure of the invention, can expand the light emitting region of semiconductor light-emitting elements.
Description
Technical field
The present invention relates to light emitting diode field is related to, more specifically, it is related to the widened semiconductor light emitting in light emitting region
Element, specially a kind of semiconductor light-emitting elements and its manufacturing method.
Background technique
The basic model of light emitting diode includes the active region between n-type carrier layer and p-type carrier layer.
When the composition with thickness and 2 carrier layers is different in active region, single or multiple Quantum Well is formed in active region
Structure.If be biased, n-type carrier layer and p-type carrier layer respectively to active region transport n-type carrier and
P-type carrier, in active region, n-type carrier and p-type Carrier recombination simultaneously shine.
Recently, the light emitting diode based on 3 group-III nitride semiconductors can show the color development similar with natural light,
Thus largely utilized in the multiple electronic product of LCD backlight or mobile phone etc..
Original general semiconductor light-emitting component is formed for electrode needed for forming underlying n-type carrier layer
The step structure for removing the p-type carrier layer being located on corresponding site and active layer and exposing n-type carrier layer.This
Stage structure significantly removes p-type carrier layer and active layer to directly form electrode in n-type carrier layer, thus has
There is the problem of light emitting region correspondingly reduces.
Summary of the invention
The purpose of the present invention is to provide a kind of semiconductor light-emitting elements and its manufacturing method, the semiconductor light-emitting elements knots
Structure can expand the light emitting region of semiconductor light-emitting elements.
To achieve the above object, the technical scheme is that a kind of semiconductor light-emitting elements, comprising:
One light emitting structure has including acting the first type semiconductor layer stacked gradually, active layer, the second type semiconductor layer from below
There is the electrode hole for penetrating through the active layer and second type semiconductor layer and exposing first type semiconductor layer；
One the first type electrode being electrically connected by the electrode hole with first type semiconductor layer；
The one second type electrode being electrically connected with second type semiconductor layer；And
One the first insulating film being arranged on the side wall and second semiconductor layer of the electrode hole, so that first type is electric
Pole and the active layer and second semiconductor layer insulate.
In an embodiment of the present invention, the second type electrode has from the connection place with second type semiconductor layer
To the first type electrode side extended 2 or more the second fingers.
In an embodiment of the present invention, the first type electrode have extend to described 2 or more the second finger it
Between more than one first finger.
In an embodiment of the present invention, further include the second insulating film, there is the second finger phase with described 2 or more
Matched shape, and be set on second semiconductor layer, and offer for the second type electrode and second type semiconductor
The connecting hole of layer connection.
In an embodiment of the present invention, first insulating film has and matches with one the first above finger
Shape.
The present invention also provides a kind of manufacturing methods of semiconductor light-emitting elements, include the following steps:
Step S1, the first type semiconductor layer, active layer and the second type semiconductor layer are stacked gradually on substrate；
Step S2, second type semiconductor layer and the active layer are etched, the electricity for exposing first type semiconductor layer is formed
Pole hole；
Step S3, it is patterned after the entire upper surface for including the second type semiconductor layer of electrode hole forms insulating layer, shape
At the first insulating film and the second insulating film, wherein the first insulating film covers the side wall of electrode hole and exposes the first type half in bottom surface
Conductor layer, the second insulating film have the connecting hole for exposing the second type semiconductor layer；
Step S4, it is formed in second type semiconductor layer and exposes the connecting hole, the electrode hole and first insulation
The transparent electrode layer of film；
Step S5, the first type electrode connecting by the electrode hole with first type semiconductor layer is formed, by described
Connecting hole and the second type electrode being connect with second type semiconductor layer.
It in an embodiment of the present invention, further include a step S6, i.e., in the pad for removing the first type electrode and second type electrode
Except all faces on form passivation layer.
In an embodiment of the present invention, the second type electrode has from the connection place with second type semiconductor layer
To the first type electrode side extended 2 or more the second fingers.
In an embodiment of the present invention, the first type electrode have extend to described 2 or more the second finger it
Between more than one first finger.
Compared to the prior art, the invention has the following advantages: semiconductor light-emitting elements of the invention, can expand
The light emitting region of semiconductor light-emitting elements.
Detailed description of the invention
Fig. 1 is the sectional view of the semiconductor light-emitting elements of the preferred embodiment of the present invention.
Fig. 2 to Fig. 7 is the figure of the manufacturing process of the semiconductor light-emitting elements of the preferred embodiment of the present invention, Fig. 2 into Fig. 7,
(a) it is sectional view, (b) is top view.
In figure: 11: substrate, 12: the first type semiconductor layers, 13: active layer, 14: the second type semiconductor layers, 15: the
One insulating film, 16: the second insulating films, 17: transparent electrode layer, 18: the first type electrodes, 19: second type electrode, 120: electricity
Pole hole, 140: connecting hole, the finger of 151: the first insulating films, the finger of 161: the second insulating films, 181: the first refer to
Shape portion, 191: the second fingers.
Specific embodiment
With reference to the accompanying drawings, the embodiment that the present invention will be described in detail.In terms of illustrating the embodiment of the present invention, when judgement is recognized
For to related known function or composition illustrate obscure main idea of the present invention with may not be necessary when, description is omitted.
Fig. 1 is the sectional view of the semiconductor light-emitting elements about the preferred embodiment of the present invention.Fig. 2 to Fig. 7 is to show this hair
The figure of the manufacturing process of the semiconductor light-emitting elements of bright preferred embodiment.In Fig. 2 into Fig. 7, (a) is sectional view, is (b) vertical view
Figure.
Referring to attached drawing, the semiconductor light-emitting elements of the preferred embodiment of the present invention may include light emitting structure, the light-emitting junction
Structure is by the first type semiconductor layer (12), active layer (13) and the second type semiconductor layer (14) structure for stacking gradually on substrate (11)
At.The electrode hole (120) for the first type electrode (18) is formed in the first type semiconductor layer (12) and active layer (13).?
The first insulating film (15) are configured on electrode hole (120) and the second type semiconductor layer (14), prevent the first type electrode (18) and are lived
Property layer (13) and the second type semiconductor layer (14) connection.The second insulating film (16) are configured on the second type semiconductor layer (14).
Second insulating film (16) has the connecting hole (140) for second type electrode (19) and the second type semiconductor layer (14) electrical connection,
On the second type semiconductor layer (14), have from connecting hole (140) to first extended 2 of type electrode (18) side or more finger
(161).First insulating film (15) has on the second type semiconductor layer (14) and extends to the second insulating film (15) finger
(161) finger (151) between.First and second insulating film (15,16) can play current barrier layer effect.In second type
Transparent electrode layer (17) are configured on semiconductor layer (14).Transparent electrode layer (17) makes connecting hole (140), the first insulating film
(15), electrode hole (120) exposes.That is, transparent electrode layer (17) can be except connecting hole (140), the first insulating film (15) and electricity
The entire configuration above of the second type semiconductor layer (14) except pole hole (120).Second type electrode (19) passes through connecting hole (140)
It is electrically connected, has to first extended 2 of type electrode (18) side or more the second finger with the second type semiconductor layer (14)
(191).Second finger (191) configures on transparent electrode layer (17), but has the finger with the second insulating film (16)
(161) similar shape, and configure its upside.First type electrode (18) passes through electrode hole (120) and the first type semiconductor layer
(12) it is electrically connected, there is more than one first finger (181) extended between the second finger (191).First type electricity
The first finger (181) of pole (18) configures on the first insulating film (15), can have similar with the first insulating film (15)
Form.Passivation layer (20) can be configured in top layer, passivation layer (20) exposes the first type electrode (18) and second type electrode
(19) pad.
The semiconductor light-emitting elements of preferred embodiment present invention as described above are general due to not having previous light-emitting component
The step structure having, thus there is substantial widened light emitting region.
Substrate (11) can apply sapphire, SiC, GaN etc., but be not limited to this.Substrate (11) can using for
The substance of nitride semiconductor growing.It may include for preventing formed on substrate (11) half in the upper surface of substrate (11)
Buffer layer needed for the lattice defect of conductor layer.
First type semiconductor layer (12) can be n-type semiconductor, and the second type semiconductor layer (14) can be p-type semiconductor.
Active layer (13) is between the first type semiconductor layer (12) and the second type semiconductor layer (14).
First type semiconductor layer (12), active layer (13), the second type semiconductor layer (14) can partly be led for 3 group-III nitrides
Body.
First type semiconductor layer (12) can with InxAlyGa1-x-yN (0≤x≤1,0≤y≤1,0≤x+y≤
1) it is selected in the semiconductor material of composition formula, such as in GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN etc.
Selection, can adulterate the n-type dopings substance such as Si, Ge, Sn.
Second type semiconductor layer (14) can with InxAlyGa1-x-yN (0≤x≤1,0≤y≤1,0≤x+y≤
1) it is selected in the semiconductor material of composition formula, such as in GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN etc.
Selection, can adulterate the p-type dopings substance such as Mg, Zn, Ca, Sr, Ba.
Active layer (13) can be in the composition with (0≤x≤1,0≤y≤1,0≤x+y≤1) InxAlyGa1-x-yN
It selects in the semiconductor material of formula, such as is selected in GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN etc., it can be with
Adulterate the p-type dopings substances such as Mg, Zn, Ca, Sr, Ba.
First insulating film (15) and the second insulating film (16) can play current barrier layer effect, can using SiO2,
Al2O3 etc..
First insulating film (15) configures on the side wall of electrode hole (120) and the second type semiconductor layer (14), cutting first
Type electrode (18) and active layer (13) and the second type semiconductor layer (14) are electrically connected.In addition, the first insulating film (15) has one
A above finger (151), cutting flow into activity from the electric current of first type electrode (18) more than one the first finger (181)
Layer (13).Therefore, the finger (151) of the first insulating film (15) and the first finger (181) of the first type electrode (18) have
Similar shape, the finger (151) of the first insulating film (15) are configured under the first finger (181) of the first type electrode (18)
Side.
Second insulating film (16) has connecting hole (140), by connecting hole (140), second type electrode (19) and second type
Semiconductor layer (14) electrical connection.Second insulating film (16) has 2 or more fingers (161), and finger (161) is to the first type
Electrode (18) side extends.The finger (161) of second insulating film (16) has the second finger with second type electrode (19)
(191) similar shape, configures on the downside of it, and cutting flows into active layer (13) from the electric current of the second finger (191).
Transparent electrode layer (17) for example can be in ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO
It is selected in (Al-Ga ZnO), IGZO (In-Ga ZnO), IrOx, RuOx, RuOx/ITO etc..
First type electrode (18) and second type electrode (19) can use nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium
(Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti), silver (Ag), tungsten (W), copper (Cu), chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium
(Nb), zirconium (Zr), tin indium oxide (ITO, Indium Tin Oxide), aluminum zinc oxide (AZO, aluminum zinc oxide),
At least one of indium-zinc oxide (IZO, Indium Zinc Oxide), is formed with single-layer or multi-layer.
First type electrode (18) is electrically connected by electrode hole (120) and the first type semiconductor layer (12), has one
Above first finger (181).First finger (181) second type electrode (19) 2 or more the second fingers (191) it
Between configure.Such as explanation made above, the finger-type of the first finger (181) of the first type electrode (18) in the first insulating film (15)
Portion configures on (151).
Second type electrode (19) is electrically connected by connecting hole (140) and the second type semiconductor layer (14), have 2 with
Upper second finger (191).Second finger (191) configures on transparent electrode layer (17), prolongs to first type electrode (18) side
It is long.
Referring to Fig. 2 to 7, illustrate the manufacturing method of the semiconductor light-emitting elements of the preferred embodiment of the present invention.
Firstly, as shown in Fig. 2, after forming buffer layer (being not shown on figure) on substrate (11), successively layer on the buffer layer
Folded first type semiconductor layer (12), active layer (13) and the second type semiconductor layer (14).
As shown in figure 3, etching the second type semiconductor layer (14) and active layer (13), form and expose the first type semiconductor layer
(12) electrode hole (120).
As shown in figure 4, it is laggard to form insulating layer on the second type semiconductor layer (14) including electrode hole (120) is entire
Row patterning, forms the first insulating film (15) and the second insulating film (16).First insulating film (15) and the second insulating film (16) shape
At the first finger (181) and the second finger that must be respectively provided with the first type electrode (18) and second type electrode (19)
(191) finger (151,161) of similar form.First insulating film (15) covers the side wall of electrode hole (120) and reveals in bottom surface
First type semiconductor layer (12) out.Second insulating film (16) has the connecting hole (140) for exposing the second type semiconductor layer (14).
As shown in figure 5, in the first type semiconductor layer (12), second absolutely except the first insulating film (15), in electrode hole (120)
Except the connecting hole (140) of velum (16) and the second type semiconductor layer (14) in connecting hole (140) includes that second type is partly led
All faces including body layer (14) and the second insulating film (16) form transparent electrode layer.
As shown in fig. 6, being patterned after all faces form metal layer, the first type electrode (18) and second type electricity are formed
Pole (19).First type electrode (18) is electrically connected by electrode hole (120) and the first type semiconductor layer (12), forms to make the
One finger (181) is configured on the finger (151) of the first insulating film (15).Second type electrode (19) passes through connecting hole
(140) and with the second type semiconductor layer (14) it is electrically connected, forms to make the second finger (191) and be configured at the second insulating film
(16) on finger (161).
Finally, as shown in fig. 7, in all face shapes in addition to the pad of the first type electrode (18) and second type electrode (19)
At passivation layer (20).
The above are preferred embodiments of the present invention, all any changes made according to the technical solution of the present invention, and generated function is made
When with range without departing from technical solution of the present invention, all belong to the scope of protection of the present invention.
Claims (9)
1. a kind of semiconductor light-emitting elements characterized by comprising
One light emitting structure has including acting the first type semiconductor layer stacked gradually, active layer, the second type semiconductor layer from below
There is the electrode hole for penetrating through the active layer and second type semiconductor layer and exposing first type semiconductor layer；
One the first type electrode being electrically connected by the electrode hole with first type semiconductor layer；
The one second type electrode being electrically connected with second type semiconductor layer；And
One the first insulating film being arranged on the side wall and second semiconductor layer of the electrode hole, so that first type is electric
Pole and the active layer and second semiconductor layer insulate.
2. semiconductor light-emitting elements according to claim 1, which is characterized in that the second type electrode have from it is described
Second type semiconductor layer connects place to the first type electrode side extended 2 or more the second fingers.
3. semiconductor light-emitting elements according to claim 2, which is characterized in that the first type electrode, which has, extends to institute
State more than one first finger between 2 or more the second fingers.
4. semiconductor light-emitting elements according to claim 2, which is characterized in that further include the second insulating film, have with
The shape that described 2 or more the second fingers match, and be set on second semiconductor layer, and offer described in confession
The connecting hole that second type electrode is connect with the second type semiconductor layer.
5. semiconductor light-emitting elements according to claim 1, which is characterized in that first insulating film has and described one
The shape that a the first above finger matches.
6. a kind of manufacturing method of semiconductor light-emitting elements, which comprises the steps of:
Step S1, the first type semiconductor layer, active layer and the second type semiconductor layer are stacked gradually on substrate；
Step S2, second type semiconductor layer and the active layer are etched, the electricity for exposing first type semiconductor layer is formed
Pole hole；
Step S3, it is patterned after the entire upper surface for including the second type semiconductor layer of electrode hole forms insulating layer, shape
At the first insulating film and the second insulating film, wherein the first insulating film covers the side wall of electrode hole and exposes the first type half in bottom surface
Conductor layer, the second insulating film have the connecting hole for exposing the second type semiconductor layer；
Step S4, it is formed in second type semiconductor layer and exposes the connecting hole, the electrode hole and first insulation
The transparent electrode layer of film；
Step S5, the first type electrode connecting by the electrode hole with first type semiconductor layer is formed, by described
Connecting hole and the second type electrode being connect with second type semiconductor layer.
7. the manufacturing method of semiconductor light-emitting elements according to claim 6, it is characterised in that: it further include a step S6,
Passivation layer is formed on all faces in addition to the pad of the first type electrode and second type electrode.
8. the manufacturing method of semiconductor light-emitting elements according to claim 6, it is characterised in that: the second type electrode tool
There is the second finger-type from the connection place with second type semiconductor layer to the first type electrode side extended 2 or more
Portion.
9. the manufacturing method of semiconductor light-emitting elements according to claim 8, it is characterised in that: the first type electrode tool
There is more than one first finger between the second finger for extending to described 2 or more.
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| CN201910348405.7A CN110010738A (en) | 2019-04-28 | 2019-04-28 | Semiconductor light-emitting elements and its manufacturing method |
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| CN201910348405.7A CN110010738A (en) | 2019-04-28 | 2019-04-28 | Semiconductor light-emitting elements and its manufacturing method |
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| CN110010738A true CN110010738A (en) | 2019-07-12 |
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