CN110010724A - One kind preparing BaZrS on the metallic substrate3The method of solar battery film material - Google Patents
One kind preparing BaZrS on the metallic substrate3The method of solar battery film material Download PDFInfo
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- CN110010724A CN110010724A CN201910264296.0A CN201910264296A CN110010724A CN 110010724 A CN110010724 A CN 110010724A CN 201910264296 A CN201910264296 A CN 201910264296A CN 110010724 A CN110010724 A CN 110010724A
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- vapor deposition
- film material
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- 239000000463 material Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000012467 final product Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 8
- 239000010980 sapphire Substances 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 229910021523 barium zirconate Inorganic materials 0.000 claims abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 229910052786 argon Inorganic materials 0.000 claims description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses one kind to prepare BaZrS on the metallic substrate3The method of solar battery film material is related to solar battery film material preparation field, comprising: weigh BaZrO3Simultaneously vulcanizing treatment obtains target A to powder；Sapphire is put into plating tungsten in magnetic control sputtering system and obtains substrate B；Plated film is carried out to target A and substrate B and obtains sample C；Sample C is heat-treated to obtain final product BaZrS3Solar battery film material.The method comprises the steps of firstly, preparing targets and metal substrate, and the target of preparation and metal substrate are then placed on sputter coating in pulse laser depositing device and obtain sample, is then heat-treated to obtain final product BaZrS to sample3Solar battery film material has filled up the blank that the solar battery film material of perovskite structure is prepared using metal substrate, and the solar battery film material for preparing perovskite structure using metal substrate has certain directive significance.
Description
Technical field
The present invention relates to solar battery film material preparation technical fields, more particularly to one kind to prepare on the metallic substrate
BaZrS3The method of solar battery film material.
Background technique
Currently, can be divided into three classes if solar battery is classified by light absorption layer material: the first kind is the silicon substrate sun
Energy battery, this kind of battery technology is mature, and photoelectric conversion efficiency is higher, and has been carried out commercial applications currently on the market
A kind of battery；Second class is multicomponent compound film solar battery, mainly includes GaAs, InP, copper indium gallium selenide CIGS, CdTe
The transfer efficiency of solar battery etc., this kind of battery is higher, and device performance is stablized, and battery light-absorption layer thinner thickness can be substantially
Raw materials consumption is reduced, is the more good thin film solar cell of industry.But the material part member that this kind of battery uses
It is known as toxicity or reserves is rare, limit promoting the use of a large area for such battery.Third class novel solar battery, mainly
Including perovskite solar battery, dye-sensitized solar cells, organic solar batteries and quantum dot solar cell etc..
Solar battery of new generation is also in laboratory development phase mostly, realizes commercialization to really introduce to the market, also
There is one section of longer road to walk, novel perovskite solar battery is attracted attention by the world rapidly within this several years, because it is when very short
Between self-energy transfer efficiency can increase to 22.1%, this energy conversion efficiency is that other solar batteries never have
, but solar battery of new generation existing at present is greatly organic and inorganic and hydridization perovskite solar battery,
It or is leaded perovskite solar battery, because its is leaded, so there is certain toxicity, and energy conversion efficiency is unstable.
Therefore, those skilled in the art are dedicated to developing a kind of prepares BaZrS on the metallic substrate3Solar battery thin film
The method of material, so that the BaZrS of preparation3Solar battery film material has preferable stability and excellent environmental-friendly
Property.
Summary of the invention
In view of the above drawbacks of the prior art, technical problem to be solved by the invention is to provide one kind in metal substrate
Upper preparation BaZrS3The method of solar battery film material, so that the BaZrS of preparation3Solar battery film material have compared with
Good stability and excellent environment friendly.
To achieve the above object, we's invention provides one kind and prepares BaZrS on the metallic substrate3Solar battery thin film
The method of material, comprising steps of
S100, BaZrO is weighed3Simultaneously vulcanizing treatment obtains target A to powder；
S200, by Sapphire Substrate be put into magnetic control sputtering system plate tungsten obtain substrate B；
S300, sample C is obtained to target A and substrate B progress plated film；
S400, sample C is heat-treated to obtain final product BaZrS3Solar battery film material.
Compared with prior art, the beneficial effects of the present invention are:
The method comprises the steps of firstly, preparing targets and metal substrate, and the target of preparation and metal substrate are then placed on pulse laser
Sputter coating obtains sample in depositing device, is then heat-treated to obtain final product BaZrS to sample3Solar battery thin
Membrane material has filled up the blank that the solar battery film material of perovskite structure is prepared using metal substrate, for utilizing gold
Belonging to the solar battery film material that substrate prepares perovskite structure has certain directive significance.
Detailed description of the invention
Fig. 1 is the preparation method flow chart of a preferred embodiment of the invention；
Fig. 2 (a) and Fig. 2 (b) is the BaZrS of the preparation method preparation of a preferred embodiment of the invention3Solar-electricity
The XRD diagram and BaZrS of pond thin-film material3The standard Pnma of perovskite material schemes, wherein Fig. 2 (a) be one of the invention preferably
The BaZrS of the preparation method preparation of embodiment3The XRD of solar battery film material, Fig. 2 (b) are BaZrS3Perovskite material
Standard Pnma figure.
Specific embodiment
Multiple preferred embodiments of the invention are introduced below with reference to Figure of description, keep its technology contents more clear and just
In understanding.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention not only limits
The embodiment that Yu Wenzhong is mentioned.
Fig. 1 is the preparation method flow chart of a preferred embodiment of the invention, comprising the following steps:
S100,5-10g BaZrO is weighed3Powder, which is contained, is put into chemical vapor deposition stove into crucible, starts to lead to argon gas into furnace
Then 4-8h starts after being warming up to 800-850 DEG C with the rate of 5 DEG C/min until oxygen in emptying furnace, ar gas passage is switched
To equipped with CS2In the cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, while being continued with the speed of 5 DEG C/min
Rate keeps the temperature 2-10h after being heated to 1000-1100 DEG C to chemical vapor deposition stove, chemical vapor deposition is arranged after for soaking time
Product furnace is cooled to 800-850 DEG C with the rate of 5 DEG C/min, is switched to ar gas passage to chemical vapor deposition stove, until furnace temperature drops
To room temperature, sample A is obtained, dry after being cleaned 3-5 times after taking-up sample A with organic solvent, ball milling is granulated, and then tabletting obtains
Target A, wherein organic solvent includes but is not limited to acetone, alcohol or ethyl acetate；
S200, it takes tungsten target and sapphire to be put into magnetic control sputtering system, is evacuated to 10-5Pa sets power as 30W, opens
Ar gas passage is passed through argon gas, when air pressure reaches 20Pa in system, starts to sputter, and duration 15-20mins obtains substrate B；
S300, target A and substrate B are put into the sputtering chamber of pulse laser depositing device, are evacuated to 10-5Pa makes target
Material A and substrate B keeps spacing 6-8cm, is arranged 700-800 DEG C of temperature of substrate B, opens laser deposition equipment and sputters 1-2h, obtains
Sample C；
S400, sample C is taken out, puts it into chemical vapor deposition stove and leads to after argon gas 4-6h with the rate liter of 5 DEG C/min
Temperature switches to ar gas passage equipped with CS to 800-850 DEG C2The cold-trap of solution, so that CS2It is participated in into chemical vapor deposition stove
Reaction, while continuing to obtain most after being heated to 1000-1100 DEG C of heat preservation 2-5h to chemical vapor deposition stove with the rate of 5 DEG C/min
Final product BaZrS3Solar battery film material.
Implementation process of the invention is specifically introduced below by 3 Application Examples.
Application Example 1
S100,5g BaZrO is weighed3Powder, which is contained, is put into chemical vapor deposition stove into crucible, starts to lead to argon gas 4h into furnace,
Until oxygen in emptying furnace, then starts after being warming up to 800 DEG C with the rate of 5 DEG C/min, ar gas passage is switched to equipped with CS2
In the cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, while being continued with the rate of 5 DEG C/min to chemistry
Gaseous phase deposition stove keeps the temperature 4h after being heated to 1000 DEG C, chemical vapor deposition stove is arranged with 5 DEG C/min's in soaking time after arriving
Rate is cooled to 800 DEG C, is switched to ar gas passage to chemical vapor deposition stove, until furnace temperature is down to room temperature, obtains sample A, takes
Dry after cleaning 3 times with organic solvent after sample A out, ball milling is granulated, and then tabletting obtains target A, wherein organic solvent packet
Include but be not limited to acetone, alcohol or ethyl acetate；
S200, it takes tungsten target and sapphire to be put into magnetic control sputtering system, is evacuated to 10-5Pa sets power as 30W, opens
Ar gas passage is passed through argon gas, when air pressure reaches 20Pa in system, starts to sputter, and duration 15mins obtains substrate B；
S300, target A and substrate B are put into the sputtering chamber of pulse laser depositing device, are evacuated to 10-5Pa makes target
Material A and substrate B keeps spacing 6cm, and 700 DEG C of substrate B temperature is arranged, and opens laser deposition equipment and sputters 1h, obtains sample C；
S400, sample C is taken out, puts it into chemical vapor deposition stove to lead to after argon gas 4h and is heated up with the rate of 5 DEG C/min
To 800 DEG C, ar gas passage is switched to equipped with CS2The cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, together
Shi Jixu obtains final product BaZrS after being heated to 1000 DEG C of heat preservation 2h to chemical vapor deposition stove with the rate of 5 DEG C/min3Too
Positive energy battery film material.
Application Example 2
S100,8g BaZrO is weighed3Powder, which is contained, is put into chemical vapor deposition stove into crucible, starts to lead to argon gas 6h into furnace,
Until oxygen in emptying furnace, then starts after being warming up to 820 DEG C with the rate of 5 DEG C/min, ar gas passage is switched to equipped with CS2
In the cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, while being continued with the rate of 5 DEG C/min to chemistry
Gaseous phase deposition stove keeps the temperature 6h after being heated to 1050 DEG C, chemical vapor deposition stove is arranged with 5 DEG C/min's in soaking time after arriving
Rate is cooled to 800 DEG C, is switched to ar gas passage to chemical vapor deposition stove, until furnace temperature is down to room temperature, obtains sample A, takes
Dry after cleaning 4 times with organic solvent after sample A out, ball milling is granulated, and then tabletting obtains target A, wherein organic solvent packet
Include but be not limited to acetone, alcohol or ethyl acetate；
S200, it takes tungsten target and sapphire to be put into magnetic control sputtering system, is evacuated to 10-5Pa sets power as 30W, opens
Ar gas passage is passed through argon gas, when air pressure reaches 20Pa in system, starts to sputter, and duration 18mins obtains substrate B；
S300, target A and substrate B are put into the sputtering chamber of pulse laser depositing device, are evacuated to 10-5Pa makes target
Material A and substrate B keeps spacing 7cm, and 750 DEG C of substrate B temperature is arranged, and opens laser deposition equipment and sputters 1.5h, obtains sample C；
S400, sample C is taken out, puts it into chemical vapor deposition stove to lead to after argon gas 5h and is heated up with the rate of 5 DEG C/min
To 820 DEG C, ar gas passage is switched to equipped with CS2The cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, together
Shi Jixu obtains final product BaZrS after being heated to 1050 DEG C of heat preservation 2h to chemical vapor deposition stove with the rate of 5 DEG C/min3Too
Positive energy battery film material.
Application Example 3
S100,10g BaZrO is weighed3Powder, which is contained, is put into chemical vapor deposition stove into crucible, starts to lead to argon gas 8h into furnace,
Until oxygen in emptying furnace, then starts after being warming up to 850 DEG C with the rate of 5 DEG C/min, ar gas passage is switched to equipped with CS2
In the cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, while being continued with the rate of 5 DEG C/min to chemistry
Gaseous phase deposition stove keeps the temperature 8h after being heated to 1100 DEG C, chemical vapor deposition stove is arranged with 5 DEG C/min's in soaking time after arriving
Rate is cooled to 850 DEG C, is switched to ar gas passage to chemical vapor deposition stove, until furnace temperature is down to room temperature, obtains sample A, takes
Dry after cleaning 5 times with organic solvent after sample A out, ball milling is granulated, and then tabletting obtains target A, wherein organic solvent packet
Include but be not limited to acetone, alcohol or ethyl acetate；
S200, it takes tungsten target and sapphire to be put into magnetic control sputtering system, is evacuated to 10-5Pa sets power as 30W, opens
Ar gas passage is passed through argon gas, when air pressure reaches 20Pa in system, starts to sputter, and duration 20mins obtains substrate B；
S300, target A and substrate B are put into the sputtering chamber of pulse laser depositing device, are evacuated to 10-5Pa makes target
Material A and substrate B keeps spacing 8cm, and 800 DEG C of substrate B temperature is arranged, and opens laser deposition equipment and sputters 2h, obtains sample C；
S400, sample C is taken out, puts it into chemical vapor deposition stove to lead to after argon gas 5h and is heated up with the rate of 5 DEG C/min
To 850 DEG C, ar gas passage is switched to equipped with CS2The cold-trap of solution, so that CS2Reaction is participated in into chemical vapor deposition stove, together
Shi Jixu obtains final product BaZrS after being heated to 1100 DEG C of heat preservation 5h to chemical vapor deposition stove with the rate of 5 DEG C/min3Too
Positive energy battery film material.
Fig. 2 (a) and Fig. 2 (b) is the BaZrS of the preparation method preparation of a preferred embodiment of the invention3Solar-electricity
The XRD diagram and BaZrS of pond thin-film material3The standard Pnma of perovskite material schemes, wherein Fig. 2 (b) is BaZrS3Perovskite material
Standard Pnma figure, Fig. 2 (a) be a preferred embodiment of the invention preparation method preparation BaZrS3Solar battery thin
The XRD diagram of membrane material, Cong Tuzhong see that diffraction maximum appears precisely at position corresponding to the corresponding crystal face of Fig. 2 (b) in Fig. 2 (a)
On, illustrate that preparation method of the invention has synthesized BaZrS3Solar battery film material has orthogonal perovskite structure, empty
Between point group be Pnma.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that the ordinary skill of this field is without wound
The property made labour, which according to the present invention can conceive, makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be within the scope of protection determined by the claims.
Claims (9)
1. one kind prepares BaZrS on the metallic substrate3The method of solar battery film material, the method includes the steps:
S100, BaZrO is weighed3Simultaneously vulcanizing treatment obtains target A to powder；
S200, by sapphire be put into magnetic control sputtering system plate tungsten obtain substrate B；
S300, sample C is obtained to target A and substrate B progress plated film；
S400, sample C is heat-treated to obtain final product BaZrS3Solar battery film material.
2. the method for claim 1, wherein preferred, BaZrO described in step S1003Quality is 5-10g, the sulphur
Change processing to carry out in chemical vapor deposition stove.
3. the method for claim 1, wherein step S100 further include:
S101, by load weighted BaZrO3Powder, which is contained, is put into chemical vapor deposition stove into crucible, and argon gas 4-8h is led into furnace, until
Empty oxygen in furnace；
Start after being warming up to 800-850 DEG C with the rate of 5 DEG C/min after oxygen emptying in S102, chemical vapor deposition stove, by argon
Gas channel is transferred to equipped with CS2In the cold-trap of solution, while continuing to heat chemical vapor deposition stove with the rate of 5 DEG C/min and rise
Temperature is to keeping the temperature 2-10h after 1000-1100 DEG C；
S103, step 102 soaking time are arranged when being cooled to 800-850 DEG C with the rate of 5 DEG C/min after and turn ar gas passage
Chemical vapor deposition stove is moved to, until furnace temperature is down to room temperature, obtains sample A.
4. method as claimed in claim 3, wherein step S100 further includes step S104: using organic solvent after taking out sample A
Dry after cleaning 3-5 times, ball milling is granulated, and then tabletting obtains target A.
5. method as claimed in claim 4, wherein the organic solvent is one of acetone, alcohol or ethyl acetate.
6. the method for claim 1, wherein step S200 includes that tungsten target and sapphire is taken to be put into magnetic control sputtering system,
It is evacuated to 10-5Pa sets power as 30W, opens ar gas passage and is passed through argon gas, when air pressure reaches 20Pa in system, starts
Sputtering, duration 15-20mins obtain substrate B.
7. the method for claim 1, wherein step S300 includes that target A and substrate B are put into pulse laser deposition to set
In standby sputtering chamber, it is evacuated to 10-5Pa makes target A and substrate B keep spacing 6-8cm, is arranged 700-800 DEG C of base reservoir temperature,
It opens laser deposition equipment and sputters 1-2h, obtain sample C.
8. the method for claim 1, wherein the heat treatment carries out in chemical vapor deposition stove.
9. the method for claim 1, wherein step S400 includes taking out sample C, chemical vapor deposition stove is put it into
It is warming up to 800-850 DEG C with the rate of 5 DEG C/min after interior logical argon gas 4-6h, ar gas passage is transferred to equipped with CS2Solution it is cold
Trap, while continuing that chemical vapor deposition stove is heated to obtain after 1000-1100 DEG C of heat preservation 2-5h with the rate of 5 DEG C/min final
Product BaZrS3Solar battery film material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264296.0A CN110010724B (en) | 2019-04-03 | 2019-04-03 | BaZrS prepared on metal substrate3Method for preparing thin film material of solar cell |
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|---|---|---|---|
| CN201910264296.0A CN110010724B (en) | 2019-04-03 | 2019-04-03 | BaZrS prepared on metal substrate3Method for preparing thin film material of solar cell |
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| CN110010724B CN110010724B (en) | 2020-10-27 |
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| CN109943816A (en) * | 2019-04-17 | 2019-06-28 | 扬州旭磁智能科技有限公司 | BaZrS3Film and preparation method thereof and its application |
| CN113193073A (en) * | 2021-03-18 | 2021-07-30 | 西安交通大学 | BaZrS3Preparation method of solar cell thin film material |
| CN114873639A (en) * | 2022-03-30 | 2022-08-09 | 郑州大学 | Ba 3 Zr 2 S 7 Film, preparation method and application thereof |
| CN115074667A (en) * | 2022-07-01 | 2022-09-20 | 郑州大学 | High-mobility p-type SrHfS 3 Film and preparation method thereof |
| CN115478248A (en) * | 2022-09-20 | 2022-12-16 | 郑州大学 | Laminated solar cell absorbing layer material SrZrS 3 Film and method for producing same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109943816A (en) * | 2019-04-17 | 2019-06-28 | 扬州旭磁智能科技有限公司 | BaZrS3Film and preparation method thereof and its application |
| CN113193073A (en) * | 2021-03-18 | 2021-07-30 | 西安交通大学 | BaZrS3Preparation method of solar cell thin film material |
| CN114873639A (en) * | 2022-03-30 | 2022-08-09 | 郑州大学 | Ba 3 Zr 2 S 7 Film, preparation method and application thereof |
| CN115074667A (en) * | 2022-07-01 | 2022-09-20 | 郑州大学 | High-mobility p-type SrHfS 3 Film and preparation method thereof |
| CN115478248A (en) * | 2022-09-20 | 2022-12-16 | 郑州大学 | Laminated solar cell absorbing layer material SrZrS 3 Film and method for producing same |
| CN115478248B (en) * | 2022-09-20 | 2023-10-24 | 郑州大学 | SrZrS material for laminated solar cell absorption layer 3 Film and method for producing the same |
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