CN110004486A - A method of improving growing silicon carbice crystals efficiency - Google Patents
A method of improving growing silicon carbice crystals efficiency Download PDFInfo
- Publication number
- CN110004486A CN110004486A CN201910386072.7A CN201910386072A CN110004486A CN 110004486 A CN110004486 A CN 110004486A CN 201910386072 A CN201910386072 A CN 201910386072A CN 110004486 A CN110004486 A CN 110004486A
- Authority
- CN
- China
- Prior art keywords
- crucible
- lead angle
- crystal
- seed crystal
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 5
- 239000010703 silicon Substances 0.000 title claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000007770 graphite material Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- -1 iridium metals Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 16
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 4
- 238000004821 distillation Methods 0.000 description 3
- 229910052571 earthenware Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a kind of method for improving growing silicon carbice crystals efficiency, including the long brilliant guide margin crucible of single-crystal silicon carbide, load coil, heat-insulation system, seed crystal.Through the invention, when silicon carbide is long brilliant, the guide margin on crucible side will volatilize 1. and improve close to the temperature gradient at seed crystal.2. guidance volatilization atom is toward at low temperature seed crystal.3. reducing volatilization atomic crystal in guide margin position.4. improving long brilliant crystal length.
Description
Technical field
The invention belongs to semiconductor fields, are related to silicon carbide long crystalline substance, crucible design, long crystal furnace thermal field.
Background technique
The silicon carbide of third generation semiconductor is the monocrystal of high growth temperature, and hardness is only second to diamond, fusing point 2830
℃.Difficult growth conditions brings up expensive carborundum crystals cost.The silicon carbide substrates of carborundum crystals production are largely used to
Power electronic component and nitride epitaxial growth can be widely applied to electric vehicle, mixed motor-car, rail traffic, high-frequency element, microwave
Device etc., economic benefit are worth very high with national defence.
It is learnt from silico-carbo binary phase diagraml, silicon carbide is long brilliant because fusing point is too high and cannot directly solidify from single liquid, is only capable of
It distils at 1800~2000 DEG C by dose silicon carbide.Therefore, scholar develops a set of physical carbon burdening (Physical
Vapor Transportation,PVT).The silicon carbide molecule of dose ratio is placed in crucible by the long crystallization, and raw temperature is extremely
2000 DEG C or more, dose silicon carbide source distils and is transported to inside crucible, including silicon carbide seed surface, is crystallized.
The carbon that distils in crucible, silicon atom transport path are mainly influenced by temperature gradient.General crucible design, seed crystal and earthenware
Crucible upper cover is all flat design, and crucible wall is vertical structure, therefore, in induction heating crucible, upper cover and earthenware around seed crystal
Crucible upper peripheral with respect to silicon carbide source is all at low temperature when causing long crystalline substance, seed crystal and its around be easy distillation atomic crystal,
The silicon carbide source in turn resulting in dose ratio can not effectively grow up on seed crystal, the waste for forming silicon carbide source and the earthenware after long crystalline substance
Crucible, upper cover clean complex.
Summary of the invention
The temperature gradient seed crystal of conventional physical vapor transport method differs larger with silicon carbide source temperature gradient, seed crystal and crucible
On to put temperature gradient smaller, the atom that causes to distil is transported with temperature gradient, crystallization in seed crystal face, crucible above inside and
The positions such as crucible upper cover.The present invention be will finishing on the inside of crucible, lead angle mode, by crucible produce the thicker, lower section in top compared with
Thin structure.And by the part of top thickness, it is fabricated to curvature, flat shape, to match the warming temperature of induction heating, reaches seed
At crystalline substance, at lead angle, at silicon carbide source, the temperature gradient at three meets design requirement.Be exactly at lead angle temperature still compared with silicon carbide source
It is low but high compared with temperature at seed crystal, it is high compared with the temperature difference of conventional physical vapor transport method, so that temperature gradient at seed crystal and lead angle
Difference is small compared with conventional physical vapor transport method by 50%~80%.
Detailed description of the invention
A kind of system diagram of the crucible of the tilted processing of band of Fig. 1 in long crystal furnace
1 thickeies position for the guide margin processing of crucible in figure.2 be seed crystal supporting table.3 be seed crystal.4 be long brilliant cavity.5 magnetic strengths
Answer heating coil.6 be crucible.
Specific embodiment
Crucible introversion tilt fittet is produced into the inclined surface of indent by computer numerical control technology (CNC) processing method,
Prolong the whole circle in square opening inside on crucible and presented around mode in this inclined surface.Inclination extends towards crucible bottom direction, to reach crucible
Top wall is thick, lower section wall thin type formula.
The lead angle crucible of indent inclined surface, can be concave surface, plane, convex form.It can be with toward crucible bottom development length
It is 1/8~7/8 crucible height.Plane formula angle is at 10~35 °.Concave surface, convex surface amplitude are no more than 1/8 crucible bore.
By crucible introversion tilt fittet, temperature gradient difference at seed crystal and lead angle can be effectively reduced, conventional physical is compared
Small 50%~80% temperature difference of vapor transportation method reduces distillation atom and is attached on crucible inside, at upper cover, increase distillation atom in
The adhesion amount of seed crystal face increases crystal length 1~5%.
Claims (6)
1. a kind of method for improving growing silicon carbice crystals efficiency, it is characterised in that: place the crucible exterior design of long brilliant raw material.
2. feature can be the materials such as graphite material, tungsten metal, iridium metals, tantalum carbide according to crucible described in claim 1.
3. according to crucible described in claim 1, feature can the lead angle of lateral deviation thickness or the lead angle of upper outer thickness partially in top.
4. according to as claimed in claim 3 partially thick, it is characterised in that lower sectional area is wide above crucible.
5. inner or outer side lead angle feature can be recessed, flat, convex form according to crucible as claimed in claim 3.
6. feature can be below crucible opening or upper cover according to crucible as claimed in claim 3 partially thick lead angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910386072.7A CN110004486A (en) | 2019-05-09 | 2019-05-09 | A method of improving growing silicon carbice crystals efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910386072.7A CN110004486A (en) | 2019-05-09 | 2019-05-09 | A method of improving growing silicon carbice crystals efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110004486A true CN110004486A (en) | 2019-07-12 |
Family
ID=67176401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910386072.7A Withdrawn CN110004486A (en) | 2019-05-09 | 2019-05-09 | A method of improving growing silicon carbice crystals efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110004486A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| CN111809231A (en) * | 2020-06-02 | 2020-10-23 | 中电科工程建设有限公司 | Crucible beneficial to growth of silicon carbide crystals |
-
2019
- 2019-05-09 CN CN201910386072.7A patent/CN110004486A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111349971A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal raw material containing device and crystal growing device |
| US11499246B2 (en) | 2020-03-30 | 2022-11-15 | Hunan Sanan Semiconductor Co., Ltd. | Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the same |
| CN111809231A (en) * | 2020-06-02 | 2020-10-23 | 中电科工程建设有限公司 | Crucible beneficial to growth of silicon carbide crystals |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190712 |