CN109999847A - A kind of preparation method of III-VI race heterojunction photocatalyst material - Google Patents
A kind of preparation method of III-VI race heterojunction photocatalyst material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 44
- 239000011941 photocatalyst Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229960000935 dehydrated alcohol Drugs 0.000 claims abstract description 10
- 239000012153 distilled water Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 229910005543 GaSe Inorganic materials 0.000 claims description 43
- 229910052594 sapphire Inorganic materials 0.000 claims description 33
- 239000010980 sapphire Substances 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 29
- 230000035484 reaction time Effects 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 10
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- 238000002604 ultrasonography Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000004851 dishwashing Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 39
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
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- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/057—Selenium or tellurium; Compounds thereof
- B01J27/0573—Selenium; Compounds thereof
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- B01J35/39—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
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Abstract
It is by Ga powder, S powder, Se powder and to provide the In in the source In the invention discloses a kind of preparation method of III-VI race heterojunction photocatalyst material2O3It is put into corresponding tube furnace, by diamond heating and is passed through protective gas argon gas, while controlling deposition process by regulating and controlling corresponding valve.Removal impurity finally is washed with distilled water and dehydrated alcohol and is placed in vacuum dry a period of time, can obtain the III-VI race heterojunction photocatalyst material of sheet.The advantages such as the present invention has experiment convenient and efficient, and operation is relatively easy, and experiment parameter is easily controllable, there is preferable industrialization prospect.
Description
Technical field
The present invention relates to preparation two-dimensional material Van der Waals hetero-junctions fields, and in particular to a kind of III-VI race hetero-junctions light is urged
The preparation method of agent material.
Background technique
Solar hydrogen making gas for fossil fuel exhaustion and combustion of fossil fuel along with environmental problem provide one
A potential effective scheme, clean energy resource not only can be obtained in photocatalytic water splitting, while whole process is all friendly to environment
, at low cost and category renewable resource.There is two-dimensional material ultra-thin structure feature can form otherness with body material
The specific surface area of big electronic structure and super large, and then the novel physical phenomenon such as initiation quantum effect.From graphite in 2004
Since alkene is found, two-dimensional material, in electricity, calorifics, mechanics, chemistry and excellent characteristics optically, makes it new by it
It is with a wide range of applications in generation electronics, photoelectron and flexible device.The excellent characteristics of single-layer graphene it is clear that but
The characteristics of its intrinsic zero band gap, but limits it in the application in micro-nano device field simultaneously, its monoatomic layer is arranged by carbon atom
It is formed after arranging into hexagonal lattice, thickness is about 0.335nm.Graphene may be considered fullerene, carbon nanotube and graphite
Basic component units.The room temperature mobilities of graphene have reached 2.5 × 105cm2·V-1·s-1, low temperature mobility close to 6 ×
106cm2·V-1·s-1, Young's modulus reaches 1TPa, and thermal conductivity is about 2000~5300Wm-1K-1, while height can be withstood
In copper 1 × 106Current density again.
(group-III element includes Ga, In to two-dimentional III-VI compounds of group；VI race element includes S, Se, Te) it is one type
Mostly important two-dimensional material has many advantages, such as at low cost, element rich reserves, environmentally friendly.It is found by theoretical calculation,
The band gap of the III-VI compounds of group of two dimension of single layer is distributed in 2.22~3.35eV, and is all indirect band-gap semiconductor.They have
Similar cellular hexagonal crystallographic texture, differences between lattice constant is small, therefore can be stacked with and to form Van der Waals hetero-junctions, different
Single layer there is different band gap, different band structures configures the combination of various energy bands by demand.The formation of hetero-junctions will
The advantage of two kinds of single layer two-dimensional materials is combined together, it is made to have extensive use the more on original base.Theory meter
Calculate research shows that the interaction of hetero-junctions between layers makes its band gap have the tendency that reduction, electronic structure, photocatalysis characteristic,
Optical property also obviously changes.Its valence band of hetero-junctions and conduction band positions that GaSe, GaS, InS and InSe are formed are respectively lower than
Oxidation-reduction potential with water decomposition is higher than, therefore is expected to have great application prospect in photocatalysis field, be it is a kind of very well
Photochemical catalyst.
Summary of the invention
The III-VI race that the problem to be solved by the invention is to provide a kind of operating procedures is simple, product component is easily controllable
Heterojunction photocatalyst material and preparation method thereof, it is intended to by building for hetero-junctions, in conjunction with the advantage of two-dimensional material not of the same race,
Promote the photocatalysis performance of material.
Technical scheme is as follows:
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
2) Ga of 0.01~0.03mol, the pottery in tube furnace (1) is added in the sapphire in the ceramic boat in tube furnace (3)
The Se or S of 0.015~0.03mol are added in porcelain boat；
3) rotating valve makes tube furnace (2) be in closed state, and tube furnace (1) is connected to tube furnace (3), is passed through Ar protection gas
35min, and tube furnace (1) is heated to 450~750 DEG C in 35min, tube furnace (3) is heated to 960~1050 DEG C, reaction
Time is 20~24 hours, is then cooled to room temperature；
4) after depositing GaSe or GaS film on sapphire in step 3), to 0.02~0.04mol of addition in tube furnace (2)
In2O3Powder is put into the ceramic boat of high-temperature region, then the S or Se powder of 0.025~0.04mol is put into the ceramic boat of low-temperature space；
5) rotating valve makes tube furnace (1) be in closed state, and tube furnace (2) is connected to tube furnace (3), then passes to Ar gas
30min, and the high-temperature region of tube furnace (2) is heated to 850~900 DEG C in 30min, low-temperature space is heated to 450~750 DEG C,
Tube furnace (3) is heated to 850~900 DEG C, heats 10~12 hours, sufficiently reacts and grows InS on GaSe or GaS film
Or InSe, it is finally cooled to room temperature；
6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
7) the obtained substance of step 6) is dried in vacuo 5~6 hours in 60~80 DEG C, InS/GaSe, InS/GaS can be obtained
Or InSe/GaSe heterojunction photocatalyst material.
Cleaning solution uses dish washing liquid before this in step 1), then is deionized water, finally uses alcohol.
Ga, Se, S purity are up to 99.99% in step 2.
Step 3) argon flow is 100 sccm (1sccm=1ml/min).
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
2) Ga of 0.01~0.03mol, the pottery in tube furnace (1) is added in the sapphire in the ceramic boat in tube furnace (3)
The Se of 0.015~0.04mol is added in porcelain boat, the S powder of 0.015~0.04mol is added in the ceramic boat in tube furnace (2)；
3) rotating valve makes tube furnace (1), tube furnace (2), tube furnace (3) be in connected state, is passed through Ar protection gas 35min,
And tube furnace (1) is heated to 690~750 DEG C in 35min, tube furnace (2) is heated to 450~500 DEG C, and tube furnace (3) adds
For heat to 960~1050 DEG C, the reaction time is 20~30 hours, while depositing GaS and GaSe film, is then cooled to room temperature；
4) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
5) the obtained substance of step 4) is dried in vacuo 4~6 hours in 60~80 DEG C, GaS/GaSe hetero-junctions light can be obtained
Catalyst material.
Cleaning solution uses dish washing liquid before this in step 1), then is deionized water, finally uses alcohol.
The purity of Ga, Se, S are up to 99.99% in step 2.
Step 3) Ar throughput is 100 sccm.
Compared with the prior art, the present invention has the following advantages:
1. using Ar gas as protective atmosphere in deposition process of the present invention, the foreign gas in reaction can be effectively prevented from
It influences, therefore product purity is higher, quality is preferable.
2. the present invention passes through the combination of two-dimensional material not of the same race, hetero-junction thin-film, work are obtained using chemical vapour deposition technique
Skill is simple, and operation is easy, and reaction temperature is lower, can be accurately controlled the atomic ratio of Ga, S, Se and In, reaction temperature,
In reaction time etc., ingredient is controllable, meets large-scale production needs, reduces costs.
3. the photocatalysis performance of III-VI race heterojunction photocatalyst material prepared by the present invention is good.
Detailed description of the invention
Fig. 1 is the schematic device that chemical vapour deposition technique prepares III-VI race hetero-junctions；
Fig. 2 is gained InS/GaSe(a), InSe/GaSe(b), InS/GaS(c) and the GaS/GaSe(d) XRD diagram of hetero-junctions；
Fig. 3 is the scanning electron microscope (SEM) photograph of gained InS/GaSe hetero-junctions；
Fig. 4 is the luminous reflectivity figure of gained InS/GaSe, InSe/GaSe, InS/GaS and GaS/GaSe hetero-junctions.
Specific embodiment
Below in conjunction with specific embodiment, the present invention will be further described, but the present invention is not limited only to these embodiments.
Embodiment 1
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
(1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
(2) Ga of 0.01mol is added in the sapphire in the ceramic boat into tube furnace 3, adds in the ceramic boat into tube furnace 1
Enter the Se of 0.015mol；
(3) rotating valve makes tube furnace 2 be in closed state, and tube furnace 1 is connected to tube furnace 3, is passed through Ar protection gas 35min,
And tube furnace 1 is heated to 690 DEG C in 35min, tube furnace 3 is heated to 960 DEG C, and the reaction time is 20 hours, then cools down
To room temperature；
(4) after depositing GaSe film on sapphire in step (3), the In of 0.02mol is added into tube furnace 22O3Powder is put
Enter in the ceramic boat of high-temperature region, then the S powder of 0.025mol is put into the ceramic boat of low-temperature space；
(5) rotating valve makes tube furnace 1 be in closed state, and tube furnace 2 is connected to tube furnace 3, then passes to Ar gas 30min,
And the high-temperature region of tube furnace 2 is heated to 850 DEG C in 30min, low-temperature space is heated to 450 DEG C, and tube furnace 3 is heated to 850 DEG C,
Heating 10 hours sufficiently reacts and grows InS on GaSe film, is finally cooled to room temperature；
(6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
(7) step (6) obtained substance is dried in vacuo 5 hours in 60 DEG C, InS/GaSe heterojunction photocatalysis can be obtained
Agent material.
Embodiment 2
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
(1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
(2) Ga of 0.02mol is added in the sapphire in the ceramic boat into tube furnace 3, adds in the ceramic boat into tube furnace 1
Enter the Se of 0.025mol；
(3) rotating valve makes tube furnace 2 be in closed state, and tube furnace 1 is connected to tube furnace 3, is passed through Ar protection gas 35min,
And tube furnace 1 is heated to 720 DEG C in 35min, tube furnace 3 is heated to 990 DEG C, and the reaction time is 22 hours, then cools down
To room temperature；
(4) after depositing GaSe film on sapphire in step (3), the In of 0.03mol is added into tube furnace 22O3Powder is put
Enter in the ceramic boat of high-temperature region, then the Se powder of 0.03mol is put into the ceramic boat of low-temperature space；
(5) rotating valve makes tube furnace 1 be in closed state, and tube furnace 2 is connected to tube furnace 3, then passes to Ar gas 30min,
And the high-temperature region of tube furnace 2 is heated to 870 DEG C in 30min, low-temperature space is heated to 720 DEG C, and tube furnace 3 is heated to 870 DEG C,
Heating 11 hours sufficiently reacts and grows InSe on GaSe film, is finally cooled to room temperature；
(6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
(7) step (6) obtained substance is dried in vacuo 6 hours in 70 DEG C, InSe/GaSe hetero-junctions light can be obtained and urge
Agent material.
Embodiment 3
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
(1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
(2) Ga of 0.025mol is added in the sapphire in the ceramic boat into tube furnace 3, adds in the ceramic boat into tube furnace 1
Enter the S powder of 0.03mol；
(3) rotating valve makes tube furnace 2 be in closed state, and tube furnace 1 is connected to tube furnace 3, is passed through Ar protection gas 35min,
And tube furnace 1 is heated to 500 DEG C in 35min, tube furnace 3 is heated to 1050 DEG C, and the reaction time is 23 hours, then cools down
To room temperature；
(4) after depositing GaS film on sapphire in step (3), the In of 0.35mol is added into tube furnace 22O3Powder is put
Enter in the ceramic boat of high-temperature region, then the S powder of 0.04mol is put into the ceramic boat of low-temperature space；
(5) rotating valve makes tube furnace 1 be in closed state, and tube furnace 2 is connected to tube furnace 3, then passes to Ar gas 30min,
And the high-temperature region of tube furnace 2 is heated to 900 DEG C in 30min, low-temperature space is heated to 500 DEG C, and tube furnace 3 is heated to 900 DEG C,
Heating 12 hours sufficiently reacts and grows InS on GaS film, is finally cooled to room temperature；
(6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
(7) step (6) obtained substance is dried in vacuo 5 hours in 80 DEG C, InS/GaS heterojunction photocatalysis can be obtained
Agent material.
Embodiment 4
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
(1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
(2) Ga of 0.03mol is added in the sapphire in the ceramic boat into tube furnace 3, adds in the ceramic boat into tube furnace 1
The S powder of 0.02mol is added in the Se for entering 0.02mol, the ceramic boat into tube furnace 2；
(3) rotating valve makes tube furnace 1, tube furnace 2, tube furnace 3 be in connected state, be passed through Ar protection gas 35min, and
Tube furnace 1 is heated to 730 DEG C in 35min, tube furnace 2 is heated to 470 DEG C, and tube furnace 3 is heated to 1050 DEG C, and the reaction time is
23 hours, while GaS and GaSe film is deposited, it then cools to room temperature；
(4) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
(5) step (4) obtained substance is dried in vacuo 5 hours in 70 DEG C, GaS/GaSe heterojunction photocatalysis can be obtained
Agent material.
Embodiment 5
A kind of preparation method of III-VI race heterojunction photocatalyst material, comprising the following steps:
(1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
(2) Ga of 0.03mol is added in the sapphire in the ceramic boat into tube furnace 3, adds in the ceramic boat into tube furnace 1
Enter the Se of 0.03mol；
(3) rotating valve makes tube furnace 2 be in closed state, and tube furnace 1 is connected to tube furnace 3, is passed through Ar protection gas 35min,
And tube furnace 1 is heated to 750 DEG C in 35min, tube furnace 3 is heated to 1050 DEG C, and the reaction time is 24 hours, then cools down
To room temperature；
(4) after depositing GaSe film on sapphire in step (3), the In of 0.04mol is added into tube furnace 22O3Powder is put
Enter in the ceramic boat of high-temperature region, then the S powder of 0.04mol is put into the ceramic boat of low-temperature space；
(5) rotating valve makes tube furnace 1 be in closed state, and tube furnace 2 is connected to tube furnace 3, then passes to Ar gas 30min,
And the high-temperature region of tube furnace 2 is heated to 900 DEG C in 30min, low-temperature space is heated to 500 DEG C, and tube furnace 3 is heated to 900 DEG C,
Heating 12 hours sufficiently reacts and grows InS on GaSe film, is finally cooled to room temperature；
(6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
(7) step (6) obtained substance is dried in vacuo 6 hours in 80 DEG C, InS/GaSe heterojunction photocatalysis can be obtained
Agent material.
Fig. 2 is InS/GaSe, InSe/GaSe, InS/GaS and GaS/GaSe heterojunction photocatalysis of Examples 1 to 4 preparation
The XRD diagram of agent material.By diffraction maximum is said there are certain similitude and otherness it can be seen from the comparison of XRD diagram picture in Fig. 2
The presence and transformation of InS, InSe, GaS and GaSe object phase is illustrated.
Fig. 3 is the scanning electron microscope (SEM) photograph of InS/GaSe heterojunction photocatalyst material prepared by embodiment 1.It can be seen by Fig. 3
It out, is two-dimentional lamellar structure by InS/GaSe hetero-junctions pattern prepared by chemical vapour deposition technique, smooth surface causes
Density is good, this is conducive to the catalytic performance for improving photochemical catalyst.
Fig. 4 is InS/GaSe, InSe/GaSe, InS/GaS and GaS/GaSe heterojunction photocatalysis of Examples 1 to 4 preparation
The luminous reflectivity figure of agent material.As seen from Figure 4 in visible-range, 4 kinds of heterojunction structures can have lesser reflection
Coefficient value, so as to show that they have excellent optical absorption property indirectly.
Table 1 is gained InS/GaSe, InSe/GaSe, InS/GaS and GaS/GaSe hetero-junctions swashing with corresponding monolayer species
Son combines energy
It can show that, compared to monolayer species, hetero-junctions builds the reduction for being conducive to exciton binding energy, and low exciton combines by table 1
Exciton can be improved to the transfer efficiency of free electron, therefore be also to increase for the energy conversion efficiency of visible light,
Therefore it can be used as photocatalyst material.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, all should belong to covering scope of the invention.
Claims (8)
1. a kind of preparation method of III-VI race heterojunction photocatalyst material, which comprises the following steps:
1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
2) Ga of 0.01~0.03mol, the pottery in tube furnace (1) is added in the sapphire in the ceramic boat in tube furnace (3)
The Se or S of 0.015~0.03mol are added in porcelain boat；
3) rotating valve makes tube furnace (2) be in closed state, and tube furnace (1) is connected to tube furnace (3), is passed through Ar protection gas
35min, and tube furnace (1) is heated to 450~750 DEG C in 35min, tube furnace (3) is heated to 960~1050 DEG C, reaction
Time is 20~24 hours, is then cooled to room temperature；
4) after depositing GaSe or GaS film on sapphire in step 3), to 0.02~0.04mol of addition in tube furnace (2)
In2O3Powder is put into the ceramic boat of high-temperature region, then the S or Se powder of 0.025~0.04mol is put into the ceramic boat of low-temperature space；
5) rotating valve makes tube furnace (1) be in closed state, and tube furnace (2) is connected to tube furnace (3), then passes to Ar gas
30min, and the high-temperature region of tube furnace (2) is heated to 850~900 DEG C in 30min, low-temperature space is heated to 450~750 DEG C,
Tube furnace (3) is heated to 850~900 DEG C, heats 10~12 hours, sufficiently reacts and grows InS on GaSe or GaS film
Or InSe, it is finally cooled to room temperature；
6) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
7) the obtained substance of step 6) is dried in vacuo 5~6 hours in 60~80 DEG C, InS/GaSe, InSe/ can be obtained
GaSe or InS/GaS heterojunction photocatalyst material.
2. a kind of preparation method of III-VI race heterojunction photocatalyst material as described in claim 1, it is characterised in that: step
1) cleaning solution uses dish washing liquid before this in, then is deionized water, finally uses alcohol.
3. a kind of preparation method of III-VI race heterojunction photocatalyst material as described in claim 1, it is characterised in that: step
2) purity of Ga, Se, S are up to 99.99% in.
4. a kind of preparation method of III-VI race heterojunction photocatalyst material as described in claim 1, it is characterised in that: step
Rapid 3) Ar throughput is 100 sccm.
5. a kind of preparation method of III-VI race heterojunction photocatalyst material, which comprises the following steps:
1) it is cleaned using sapphire as substrate and in different solutions using ultrasound and reaches standard；
2) Ga of 0.01~0.03mol, the pottery in tube furnace (1) is added in the sapphire in the ceramic boat in tube furnace (3)
The Se of 0.015~0.04mol is added in porcelain boat, the S powder of 0.015~0.04mol is added in the ceramic boat in tube furnace (2)；
3) rotating valve makes tube furnace (1), tube furnace (2), tube furnace (3) be in connected state, is passed through Ar protection gas 35min,
And tube furnace (1) is heated to 690~750 DEG C in 35min, tube furnace (2) is heated to 450~500 DEG C, and tube furnace (3) adds
For heat to 960~1050 DEG C, the reaction time is 20~30 hours, while depositing GaS and GaSe film, is then cooled to room temperature；
4) sapphire is taken out, washs removal impurity with distilled water and dehydrated alcohol respectively；
5) the obtained substance of step 4) is dried in vacuo 4~6 hours in 60~80 DEG C, GaS/GaSe hetero-junctions light can be obtained
Catalyst material.
6. a kind of preparation method of III-VI race heterojunction photocatalyst material as claimed in claim 5, it is characterised in that: step
1) cleaning solution uses dish washing liquid before this in, then is deionized water, finally uses alcohol.
7. a kind of preparation method of III-VI race heterojunction photocatalyst material as claimed in claim 5, it is characterised in that: step
2) purity of Ga, Se, S are up to 99.99% in.
8. a kind of preparation method of III-VI race heterojunction photocatalyst material as claimed in claim 5, it is characterised in that: step
Rapid 3) Ar throughput is 100 sccm.
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