CN109994464B - Layout pattern with double pitch and method of forming the same - Google Patents
Layout pattern with double pitch and method of forming the same Download PDFInfo
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- CN109994464B CN109994464B CN201711467952.4A CN201711467952A CN109994464B CN 109994464 B CN109994464 B CN 109994464B CN 201711467952 A CN201711467952 A CN 201711467952A CN 109994464 B CN109994464 B CN 109994464B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Abstract
The invention provides a layout pattern with double pitches and a forming method thereof. The graph comprises a first branch graph and a second branch graph, the first branch graph comprises a first main body structure and a first turning structure, and the second branch graph comprises a second main body structure and a second turning structure. A first space is formed between the first main body structure and the second main body structure, and a second space is formed between the adjacent main body structures of the adjacent figures. The first end part of the first main body structure is connected with the first turning structure, and the second end part of the second main body structure is connected with the second turning structure, so that the distance between the end parts of the adjacent branch patterns is adjusted to be between the first distance and the second distance. The invention solves the problem that the electrical contact between the metal bolt and the adjacent branch pattern or the reduction of the electrical conductivity of the metal bolt when the metal bolt is subjected to a certain amount of deviation because the distance between the adjacent branch patterns is too small in the prior art.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and more particularly, to a layout pattern with double pitch and a method for forming the same.
Background
Currently, many factors, such as the need for increased portability, computing power, memory capacity, and energy efficiency, are continually making integrated circuits denser. The size of the constituent features (e.g., electrical devices and interconnect lines) that form integrated circuits is continually being reduced to facilitate their scaling.
In order to make integrated circuits more dense to increase the characteristics of portability, computing power, and storage capacity, integrated circuits are being made increasingly dense, memory devices can be made smaller by reducing the size of the electrical devices that make up the memory cells and the size of the conductive lines that make up the memory cells, and in addition, storage capacity can be increased by mounting more memory cells over a given area in the memory device.
However, the ever-decreasing feature sizes place ever-increasing demands on the techniques used to form such features, which, as the spacing between adjacent conductive lines continues to decrease, can affect the conductive properties of subsequently formed metal plugs; specifically, as shown in fig. 1 and fig. 2, when the distance between the adjacent first branch pattern 500 and the second branch pattern 501 in the same pattern 50 is continuously decreased, or when the distance between the second branch pattern 501 in one pattern 50 and the first branch pattern 500 in another pattern 50 adjacent to the second branch pattern is continuously decreased, in order to avoid the electrical contact between the metal plug and the branch of the adjacent pattern, a certain amount of offset is generated between the metal plug and the branch pattern when the metal plug is formed; although the method avoids the electrical contact between the metal plug and the adjacent branch pattern, the offset of the metal plug reduces the conductive performance of the metal plug.
Therefore, it is necessary to design a new layout pattern with double pitch and a method for forming the same to solve the above-mentioned problems.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a layout pattern with double pitch and a method for forming the layout pattern, which are used to solve the problem in the prior art that the metal plug is easily electrically contacted with the adjacent branch pattern due to the too small pitch between the adjacent branch patterns, or the problem that the metal plug is shifted by a certain amount when the metal plug is formed on the branch pattern in order to avoid the electrical contact between the metal plug and the adjacent branch pattern, thereby reducing the electrical conductivity of the metal plug.
To achieve the above and other related objects, the present invention provides a layout pattern having a double pitch, the layout pattern including:
a semiconductor substrate; and
a plurality of patterns formed on the semiconductor substrate, the patterns having a first side and a second side, the patterns including a first branch pattern and a second branch pattern, wherein the first branch pattern includes a first main structure and a first turning structure, the second branch pattern includes a second main structure and a second turning structure, a first space is formed between the first main structure and the second main structure, a second space is formed between adjacent main structures of adjacent patterns, and the first space and the second space are different; the first end of the first main body structure is connected with the first turning structure, and the second end of the second main body structure is connected with the second turning structure, so that the distance between the ends of the adjacent branch patterns is adjusted to be between the first distance and the second distance.
Preferably, the first branch pattern further comprises a second hinge structure connected to the second end of the first main body structure; the second branch pattern further comprises a first inflection structure connected to the first end of the second body structure.
Preferably, the first turning structure of the first branch pattern includes: the first main body structure comprises a first turning part connected with a first end part of the first main body structure and a first extending part connected with the first turning part, wherein the first turning part is provided with an orthographic projection along the first side; the second turning structure of the second branch pattern includes: the second main structure comprises a second turning part connected with the second end part of the second main structure and a second extending part connected with the second turning part, wherein the second turning part is provided with an orthographic projection along the second side.
Preferably, the first pitch is greater than the second pitch, a pitch between the first extension portion of the first branch pattern and the second main body structure of the second branch pattern is smaller than the first pitch, and a pitch between the second extension portion of the second branch pattern and the first main body structure of the first branch pattern is smaller than the first pitch.
Preferably, the first pitch is smaller than the second pitch, a pitch between the first extension portion of the first branch pattern and the second main body structure of the second branch pattern is larger than the first pitch, and a pitch between the second extension portion of the second branch pattern and the first main body structure of the first branch pattern is larger than the first pitch.
Preferably, the first turning structure of the first branch pattern and the second turning structure of the second branch pattern are distributed in a central symmetry.
Preferably, the layout pattern further includes a first metal plug connected to an end of the first branch pattern and a second metal plug connected to an end of the second branch pattern, and the first metal plug and the second metal plug are respectively located on two parallel sides of the end of the branch pattern.
The invention also provides a method for forming a layout pattern with double pitch, which comprises the following steps:
step 1) providing a semiconductor substrate, and forming a pattern material layer on the semiconductor substrate;
step 2) forming a plurality of first mask patterns on the pattern material layer, wherein the first mask patterns have a first lateral direction and a second lateral direction, each first mask pattern comprises a first side wall and a second side wall, each first side wall comprises a first side wall main body structure and a first side wall turning structure connected with a first end of the first side wall main body structure, each second side wall comprises a second side wall main body structure and a second side wall turning structure connected with a second end of the second side wall main body structure, a first gap is formed between each first side wall main body structure and each second side wall main body structure, a second gap is formed between adjacent side wall main body structures of adjacent first mask patterns, and the first gaps and the second gaps are different;
step 3) forming a second mask pattern on the side wall of the first mask pattern, wherein the second mask pattern comprises a first branch mask pattern having the same outer contour as the first side wall and a second branch mask pattern having the same outer contour as the second side wall;
step 4) removing the first mask pattern, and etching the pattern material layer through the second mask pattern to form a pattern in the pattern material layer, wherein the pattern has a first side and a second side, the pattern comprises a first branch pattern with the same structure as the first branch mask pattern and a second branch pattern with the same structure as the second branch mask pattern, the first branch pattern comprises a first main body structure and a first turning structure, and the second branch pattern comprises a second main body structure and a second turning structure; a first distance is formed between the first main body structure and the second main body structure, a second distance is formed between adjacent main body structures of adjacent graphs, and the first distance and the second distance are different; the first end of the first main body structure is connected with the first turning structure, and the second end of the second main body structure is connected with the second turning structure, so that the distance between the ends of the adjacent branch patterns is adjusted to be between the first distance and the second distance.
Preferably, the first sidewall further comprises a second sidewall hinge structure connected to the second end of the first sidewall body structure; the second sidewall further includes a first sidewall-turning structure connected to the first end of the second sidewall body structure.
Preferably, the first sidewall-turning structure of the first sidewall includes: the first side wall main structure comprises a first side wall turning part connected with a first end part of the first side wall main structure and a first side wall extending part connected with the first side wall turning part, wherein the first side wall turning part has an orthographic projection along the first side direction; the second sidewall transition structure of the second sidewall comprises: the second side wall main structure comprises a second side wall turning part connected with the second end part of the second side wall main structure and a second side wall extending part connected with the second side wall turning part, wherein the second side wall turning part has a positive projection along the second side direction.
Preferably, the first gap is greater than the second gap, the gap between the first sidewall extension of the first sidewall and the second sidewall body structure of the second sidewall is less than the first gap, and the gap between the second sidewall extension of the second sidewall and the first sidewall body structure of the first sidewall is less than the first gap.
Preferably, the first gap is less than the second gap, the gap between the first sidewall extension of the first sidewall and the second sidewall body structure of the second sidewall is greater than the first gap, and the gap between the second sidewall extension of the second sidewall and the first sidewall body structure of the first sidewall is greater than the first gap.
Preferably, the first sidewall hinge structure of the first sidewall and the second sidewall hinge structure of the second sidewall are distributed in a central symmetry.
Preferably, the forming method further includes a step of forming a first metal plug at an end of the first branch pattern, and a step of forming a second metal plug at an end of the second branch pattern, where the first metal plug and the second metal plug are respectively located at two parallel sides of the end of the branch pattern.
As described above, the layout pattern with double pitch and the method for forming the same according to the present invention have the following advantageous effects: according to the invention, through the special design of the graph, the graph comprises a first branch graph and a second branch graph, the first branch graph comprises a first main body structure and a first turning structure, the second branch graph comprises a second main body structure and a second turning structure, the first turning structure is designed on the first end part of the first main body structure, the second turning structure is designed on the second end part of the second main body structure so as to adjust the distance between the end parts of the adjacent branch graphs, and the electrical contact between a metal plug formed on the end part of the branch graph and the adjacent branch graph is avoided, so that the problem that the forming position of the metal plug has a certain offset compared with the branch graph is solved, and the electrical conductivity of the metal plug is greatly improved.
Drawings
Fig. 1 is a schematic diagram of a layout pattern in the prior art.
Fig. 2 is a schematic structural diagram of another layout pattern in the prior art.
Fig. 3 is a flowchart illustrating a layout pattern forming method according to an embodiment of the invention.
Fig. 4 to 16 are schematic structural diagrams illustrating steps in a layout pattern forming method according to an embodiment of the invention; wherein fig. 5 is a sectional view taken along direction AA 'of fig. 4, fig. 7 is a sectional view taken along direction AA' of fig. 6, fig. 9 is a sectional view taken along direction AA 'of fig. 8, fig. 11 is a sectional view taken along direction AA' of fig. 10, fig. 13 is a sectional view taken along direction AA 'of fig. 12, and fig. 15 is a sectional view taken along direction AA' of fig. 14.
Fig. 17 is a schematic structural diagram of a layout pattern according to a second embodiment of the present invention.
Fig. 18 is a schematic structural diagram of a layout pattern according to a third embodiment of the present invention.
Fig. 19 is a schematic structural diagram of a layout pattern according to the fourth embodiment of the present invention.
Description of the element reference numerals
10 semiconductor substrate
20 layer of patterned material
31 first mask pattern material layer
32 first mask pattern
M1 first lateral
M2 second lateral direction
320 first side wall
321 second side wall
322 first side wall main body structure
322a first end of a first sidewall body structure
322b second end of the first sidewall body structure
323 first side wall turning structure
324 first side wall turn
325 first side wall extension
326 second sidewall body structure
326a first end of a second sidewall body structure
326b second end of second sidewall body construction
327 second sidewall hinge structure
328 second sidewall transition
329 second sidewall extension
41 second mask pattern material layer
42 second mask pattern
420 first branch mask pattern
421 second branch mask pattern
50 figure
First side of C1
Second side of C2
500 first branch pattern
500a, 500b end portions of the first branch pattern
501 second branching pattern
501a, 501b end portions of the second branch pattern
502 first body structure
502a first end of a first body structure
502b second end of the first body structure
503 first turning structure
504 first turning part
505 first extension
506 second body structure
506a first end of the second body structure
506b second end of the second body structure
507 second turning structure
508 second turn
509 second extension
61 first metal bolt
62 second metal bolt
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3 to 19. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 3, the present embodiment provides a method for forming a layout pattern with a double pitch, the method comprising:
step 1) providing a semiconductor substrate 10, and forming a pattern material layer 20 on the semiconductor substrate 10;
step 2) forming a plurality of first mask patterns 32 on the pattern material layer 20, the first mask patterns 32 having a first lateral direction M1 and a second lateral direction M2, wherein the first mask pattern 32 includes a first sidewall 320 and a second sidewall 321, the first sidewall 320 includes a first sidewall body structure 322 and a first sidewall hinge structure 323 connected to a first end 322a of the first sidewall body structure 322, the second sidewall 321 includes a second sidewall body structure 326 and a second sidewall hinge structure 327 connected to the second end 326b of the second sidewall body structure 326, a first gap D1 exists between the first sidewall body structure 322 and the second sidewall body structure 326, a second gap D2 exists between adjacent sidewall body structures adjacent to the first mask pattern 32, and the first gap D1 and the second gap D2 are different;
step 3) forming a second mask pattern 42 on the sidewall of the first mask pattern 32, wherein the second mask pattern 42 includes a first branch mask pattern 420 having the same outer contour as the first sidewall 320 and a second branch mask pattern 421 having the same outer contour as the second sidewall 321;
step 4) removing the first mask pattern 32, and etching the pattern material layer 20 through the second mask pattern 42 to form a pattern 50 in the pattern material layer 20, where the pattern 50 has a first side C1 and a second side C2, where the pattern 50 includes a first branch pattern 500 having the same structure as the first branch mask pattern 420 and a second branch pattern 501 having the same structure as the second branch mask pattern 421, the first branch pattern 500 includes a first main body structure 502 and a first turning structure 503, and the second branch pattern 501 includes a second main body structure 506 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
The method for forming the layout pattern with double pitch according to the present embodiment will be described in detail with reference to fig. 4 to 14.
As shown in fig. 4 and 5, a semiconductor substrate 10 is provided, and a pattern material layer 20 is formed on the semiconductor substrate 10.
As an example, the semiconductor substrate 10 is selected according to actual requirements, and may be any structure that needs to be further etched, such as a structural layer of a gate structure to be formed, which may be a material layer, or a stacked material layer of two or more layers, and is not limited herein. In addition, the pattern material layer 20 formed on the surface of the semiconductor substrate 10 is subsequently patterned by a double pitch (pitch doubling) technique, wherein the formed pattern may be applied to a device manufacturing process, such as a Word Line (WL) or a Bit Line (BL).
As an example, the material of the pattern material layer 20 includes, but is not limited to, a conductor material or a semiconductor material, and preferably, in the present embodiment, the material of the pattern material layer 20 includes a metal material.
As shown in fig. 4 to 7, a plurality of first mask patterns 32 are formed on the pattern material layer 20, the first mask patterns 32 have a first lateral direction M1 and a second lateral direction M2, wherein the first mask pattern 32 includes a first sidewall 320 and a second sidewall 321, the first sidewall 320 includes a first sidewall body structure 322 and a first sidewall hinge structure 323 connected to a first end 322a of the first sidewall body structure 322, the second sidewall 321 includes a second sidewall body structure 326 and a second sidewall hinge structure 327 connected to the second end 326b of the second sidewall body structure 326, the first sidewall body structure 322 and the second sidewall body structure 326 have a first gap D1 therebetween, and the adjacent sidewall body structures adjacent to the first mask pattern 32 have a second gap D2 therebetween, wherein the first gap D1 and the second gap D2 are different.
As an example, the method of forming the first mask pattern 32 includes:
as shown in fig. 4 and 5, a first mask pattern material layer 31 is formed on the pattern material layer 20, and then as shown in fig. 6 and 7, the first mask pattern material layer 31 is etched to form the first mask pattern 32.
Specifically, the material of the first mask pattern material layer 31 includes, but is not limited to, photoresist.
As an example, as shown in fig. 6, the first sidewall hinge structure 323 of the first sidewall 320 includes: a first sidewall turn 324 connected to a first end of the first sidewall body structure 322, and a first sidewall extension 325 connected to the first sidewall turn 324, wherein the first sidewall turn 324 has an orthographic projection along the first side direction M1; the second sidewall-turning structure 327 of the second sidewall 321 includes: a second sidewall hinge 328 connected to the second end of the second sidewall body structure 326, and a second sidewall extension 329 connected to the second sidewall hinge 328, wherein the second sidewall hinge 328 has an orthographic projection along the second lateral direction M2.
Preferably, in the present embodiment, as shown in fig. 6, the first gap D1 is greater than the second gap D2, the gap between the first sidewall extension 325 of the first sidewall 320 and the second sidewall body structure 326 of the second sidewall 321 is less than the first gap D1, and the gap between the second sidewall extension 329 of the second sidewall 321 and the first sidewall body structure 322 of the first sidewall 320 is less than the first gap D1.
As an example, the first sidewall-turn structure 323 of the first sidewall 320 and the second sidewall-turn structure 327 of the second sidewall 321 are distributed in a central symmetry.
As shown in fig. 8 to 11, a second mask pattern 42 is formed at the sidewall of the first mask pattern 32, wherein the second mask pattern 42 includes a first branch mask pattern 420 having the same outer contour as the first sidewall 320 and a second branch mask pattern 421 having the same outer contour as the second sidewall 321.
As an example, the method of forming the second mask pattern 42 includes:
as shown in fig. 8 and 9, a second mask pattern material layer 41 is formed on the sidewall of the first mask pattern 32, and then as shown in fig. 10 and 11, the second mask pattern material layer 41 is etched to form the second mask pattern 42.
As an example, the material of the second mask pattern material layer 41 includes, but is not limited to, silicon nitride.
As shown in fig. 12 to 15, removing the first mask pattern 32, and etching the pattern material layer 20 through the second mask pattern 42 to form a pattern 50 in the pattern material layer 20, where the pattern 50 has a first side C1 and a second side C2, where the pattern 50 includes a first branch pattern 500 having the same structure as the first branch mask pattern 420 and a second branch pattern 501 having the same structure as the second branch mask pattern 421, the first branch pattern 500 includes a first main body structure 502 and a first turning structure 503, and the second branch pattern 501 includes a second main body structure 506 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
As an example, as shown in fig. 16, the forming method further includes a step of forming a first metal plug 61 at an end 500a or 500b of the first branch pattern 500, and a step of forming a second metal plug 62 at an end 501a or 501b of the second branch pattern 501; the first metal plug 61 and the second metal plug 62 are respectively located at two parallel sides of the branch pattern end 500a, 500b, 501a or 501 b.
Preferably, in this embodiment, the first metal plug 61 is formed on an end portion 500b of the first branch pattern 500, and the second metal plug 62 is formed on an end portion 501a of the second branch pattern 501, so as to reduce on-resistance.
The layout pattern structure with double pitches formed by the above-described forming method is shown in fig. 14 to 16, and the layout pattern includes:
a semiconductor substrate 10; and
a plurality of patterns 50 formed on the semiconductor substrate 10, the patterns 50 having a first side C1 and a second side C2, wherein the patterns 50 include a first branch pattern 500 and a second branch pattern 501, wherein the first branch pattern 500 includes a first body structure 502 and a first turning structure 503, the second branch pattern 501 includes a second body structure 506 and a second turning structure 507, a first pitch L1 is between the first body structure 502 and the second body structure 506, a second pitch L2 is between adjacent body structures of the adjacent patterns 50, and the first pitch L1 is different from the second pitch L2; the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
As an example, as shown in fig. 14 and 16, the first turning structure 503 of the first branch pattern 500 includes: a first turning portion 504 connected to the first end 502a of the first main body structure 502, and a first extending portion 505 connected to the first turning portion 504, wherein the first turning portion 504 has an orthographic projection along the first side C1; the second turning structure 507 of the second branch pattern 501 includes: a second turn 508 connected to the second end 506b of the second body structure 506, and a second extension 509 connected to the second turn 508, wherein the second turn 508 has an orthographic projection along the second side C2.
Preferably, in the present embodiment, as shown in fig. 14 and 16, the first spacing L1 is greater than the second spacing L2, the spacing between the first extension portion 505 of the first branch pattern 500 and the second body structure 506 of the second branch pattern 501 is smaller than the first spacing L1, and the spacing between the second extension portion 509 of the second branch pattern 501 and the first body structure 502 of the first branch pattern 500 is smaller than the first spacing L1.
As an example, the first turning structure 503 of the first branch pattern 500 and the second turning structure 507 of the second branch pattern 501 are distributed in a central symmetry.
As an example, as shown in fig. 16, the layout pattern further includes a first metal plug 61 connected to an end 500a or 500b of the first branch pattern 500, and a second metal plug 62 connected to an end 501a or 501b of the second branch pattern 501; the first metal plug 61 and the second metal plug 62 are respectively located at two parallel sides of the branch pattern end 500a, 500b, 501a or 501 b.
Preferably, in this embodiment, the first metal plug 61 is located on the end 500b of the first branch pattern 500, the second metal plug 62 is located on the end 501a of the second branch pattern 501, that is, the first metal plug 61 is located on the second end 502b of the first main body structure 502, and the second metal plug 62 is located on the first end 506a of the second main body structure 506, so as to reduce the on-resistance.
Example two
As shown in fig. 3, the present embodiment provides a method for forming a layout pattern with a double pitch, the method comprising:
step 1) providing a semiconductor substrate 10, and forming a pattern material layer 20 on the semiconductor substrate 10;
step 2) forming a plurality of first mask patterns 32 on the pattern material layer 20, the first mask patterns 32 having a first lateral direction M1 and a second lateral direction M2, wherein the first mask pattern 32 includes a first sidewall 320 and a second sidewall 321, the first sidewall 320 includes a first sidewall body structure 322 and a first sidewall hinge structure 323 connected to a first end 322a of the first sidewall body structure 322, the second sidewall 321 includes a second sidewall body structure 326 and a second sidewall hinge structure 327 connected to the second end 326b of the second sidewall body structure 326, a first gap D1 exists between the first sidewall body structure 322 and the second sidewall body structure 326, a second gap D2 exists between adjacent sidewall body structures adjacent to the first mask pattern 32, and the first gap D1 and the second gap D2 are different;
step 3) forming a second mask pattern 42 on the sidewall of the first mask pattern 32, wherein the second mask pattern 42 includes a first branch mask pattern 420 having the same outer contour as the first sidewall 320 and a second branch mask pattern 421 having the same outer contour as the second sidewall 321;
step 4) removing the first mask pattern 32, and etching the pattern material layer 20 through the second mask pattern 42 to form a pattern 50 in the pattern material layer 20, where the pattern 50 has a first side C1 and a second side C2, where the pattern 50 includes a first branch pattern 500 having the same structure as the first branch mask pattern 420 and a second branch pattern 501 having the same structure as the second branch mask pattern 421, the first branch pattern 500 includes a first main body structure 502 and a first turning structure 503, and the second branch pattern 501 includes a second main body structure 506 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
Preferably, in the present embodiment, the first gap D1 is smaller than the second gap D2, the gap between the first sidewall extension 325 of the first sidewall 320 and the second sidewall body structure 326 of the second sidewall 321 is larger than the first gap D1, and the gap between the second sidewall extension 329 of the second sidewall 321 and the first sidewall body structure 322 of the first sidewall 320 is larger than the first gap D1.
The layout pattern structure with double pitches formed by the above-described forming method is shown in fig. 17, and the layout pattern includes:
a semiconductor substrate 10; and
a plurality of patterns 50 formed on the semiconductor substrate 10, the patterns 50 having a first side C1 and a second side C2, the patterns 50 including a first branch pattern 500 and a second branch pattern 501, wherein the first branch pattern 500 includes a first body structure 502 and a first turning structure 503, the second branch pattern 501 includes a second body structure 506 and a second turning structure 507, a first pitch L1 is between the first body structure 502 and the second body structure 506, a second pitch L2 is between adjacent body structures of the patterns 50, and the first pitch L1 is different from the second pitch L2; the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
Preferably, in the present embodiment, as shown in fig. 17, the first spacing L1 is smaller than the second spacing L2, the spacing between the first extension portion 505 of the first branch pattern 500 and the second body structure 506 of the second branch pattern 501 is larger than the first spacing L1, and the spacing between the second extension portion 509 of the second branch pattern 501 and the first body structure 502 of the first branch pattern 500 is larger than the first spacing L1.
EXAMPLE III
The embodiment provides a method for forming a layout pattern with double pitches, which comprises the following steps:
step 1) providing a semiconductor substrate 10, and forming a pattern material layer 20 on the semiconductor substrate 10;
step 2) forming a plurality of first mask patterns 32 on the pattern material layer 20, wherein the first mask patterns 32 have a first lateral direction M1 and a second lateral direction M2; wherein the first mask pattern 32 includes a first sidewall 320 and a second sidewall 321; the first sidewall 320 comprises a first sidewall body structure 322, a first sidewall hinge structure 323 connected to the first end 322a of the first sidewall body structure 322, and a second sidewall hinge structure 327 connected to the second end 322b of the first sidewall body structure 322; the second sidewall 321 includes a second sidewall body structure 326, a first sidewall hinge structure 323 connected to a first end 326a of the second sidewall body structure 326, and a second sidewall hinge structure 327 connected to a second end 326b of the second sidewall body structure 326; a first gap D1 exists between the first sidewall body structure 322 and the second sidewall body structure 326, a second gap D2 exists between adjacent sidewall body structures adjacent to the first mask pattern 32, and the first gap D1 and the second gap D2 are different;
step 3) forming a second mask pattern 42 on the sidewall of the first mask pattern 32, wherein the second mask pattern 42 includes a first branch mask pattern 420 having the same outer contour as the first sidewall 320 and a second branch mask pattern 421 having the same outer contour as the second sidewall 321;
step 4) removing the first mask pattern 32, and etching the pattern material layer 20 through the second mask pattern 42 to form a pattern 50 in the pattern material layer 20, wherein the pattern 50 has a first side C1 and a second side C2; the pattern 50 includes a first branch pattern 500 having the same structure as the first branch mask pattern 420 and a second branch pattern 501 having the same structure as the second branch mask pattern 421, the first branch pattern 500 includes a first main body structure 502, a first turning structure 503 and a second turning structure 507, and the second branch pattern 501 includes a second main body structure 506, a first turning structure 503 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; wherein the first end 502a of the first main body structure 502 is connected to the first turning structure 503, the second end 502b of the first main body structure 502 is connected to the second turning structure, the first end 506a of the second main body structure 506 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
Preferably, in the present embodiment, the first gap D1 is greater than the second gap D2, the gap between the first sidewall extension 325 of the first sidewall 320 and the first sidewall extension 325 of the second sidewall 321 is less than the first gap D1, and the gap between the second sidewall extension 329 of the first sidewall 320 and the second sidewall extension 329 of the second sidewall 321 is less than the first gap D1.
The layout pattern structure with double pitches formed by the above-described forming method is shown in fig. 18, and the layout pattern includes:
a semiconductor substrate 10; and
a plurality of patterns 50 formed on the semiconductor substrate 10, the patterns 50 having a first side C1 and a second side C2, the patterns 50 including a first branch pattern 500 and a second branch pattern 501; the first branch graph 500 includes a first main body structure 502, a first turning structure 503 and a second turning structure 507, and the second branch graph 501 includes a second main body structure 506, a first turning structure 503 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; wherein the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 502b of the first main body structure 502 is connected to the second turning structure 507; a first end 506a of the second main body 506 is connected to the first turning structure 503, and a second end 506b of the second main body 506 is connected to the second turning structure 507; to adjust the spacing between adjacent branching pattern ends 500a and 501a and 500b and 501b between the first spacing L1 and the second spacing L2.
Preferably, in this embodiment, as shown in fig. 18, the first distance L1 is greater than the second distance L2, the distance between the first extension portion 505 of the first branch pattern 500 and the first extension portion 505 of the second branch pattern 501 is smaller than the first distance L1, and the distance between the second extension portion 509 of the first branch pattern 500 and the second extension portion 509 of the second branch pattern 501 is smaller than the first distance L1.
Example four
As shown in fig. 3, the present embodiment provides a method for forming a layout pattern with a double pitch, the method comprising:
step 1) providing a semiconductor substrate 10, and forming a pattern material layer 20 on the semiconductor substrate 10;
step 2) forming a plurality of first mask patterns 32 on the pattern material layer 20, wherein the first mask patterns 32 have a first lateral direction M1 and a second lateral direction M2; wherein the first mask pattern 32 includes a first sidewall 320 and a second sidewall 321; the first sidewall 320 comprises a first sidewall body structure 322, a first sidewall hinge structure 323 connected to the first end 322a of the first sidewall body structure 322, and a second sidewall hinge structure 327 connected to the second end 322b of the first sidewall body structure 322; the second sidewall 321 includes a second sidewall body structure 326, a first sidewall hinge structure 323 connected to a first end 326a of the second sidewall body structure 326, and a second sidewall hinge structure 327 connected to a second end 326b of the second sidewall body structure 326; a first gap D1 exists between the first sidewall body structure 322 and the second sidewall body structure 326, a second gap D2 exists between adjacent sidewall body structures adjacent to the first mask pattern 32, and the first gap D1 and the second gap D2 are different;
step 3) forming a second mask pattern 42 on the sidewall of the first mask pattern 32, wherein the second mask pattern 42 includes a first branch mask pattern 420 having the same outer contour as the first sidewall 320 and a second branch mask pattern 421 having the same outer contour as the second sidewall 321;
step 4) removing the first mask pattern 32, and etching the pattern material layer 20 through the second mask pattern 42 to form a pattern 50 in the pattern material layer 20, wherein the pattern 50 has a first side C1 and a second side C2; the pattern 50 includes a first branch pattern 500 having the same structure as the first branch mask pattern 420 and a second branch pattern 501 having the same structure as the second branch mask pattern 421, the first branch pattern 500 includes a first main body structure 502, a first turning structure 503 and a second turning structure 507, and the second branch pattern 501 includes a second main body structure 506, a first turning structure 503 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; wherein the first end 502a of the first main body structure 502 is connected to the first turning structure 503, the second end 502b of the first main body structure 502 is connected to the second turning structure, the first end 506a of the second main body structure 506 is connected to the first turning structure 503, and the second end 506b of the second main body structure 506 is connected to the second turning structure 507, so as to adjust the distance between the adjacent branch pattern ends 500a and 501a and 500b and 501b between the first distance L1 and the second distance L2.
Preferably, in the present embodiment, the first gap D1 is smaller than the second gap D2, the gap between the first sidewall extension 325 of the first sidewall 320 and the first sidewall extension 325 of the second sidewall 321 is larger than the first gap D1, and the gap between the second sidewall extension 329 of the first sidewall 320 and the second sidewall extension 329 of the second sidewall 321 is larger than the first gap D1.
The layout pattern structure with double pitches formed by the above-described formation method is shown in fig. 19, and the layout pattern includes:
a semiconductor substrate 10; and
a plurality of patterns 50 formed on the semiconductor substrate 10, the patterns 50 having a first side C1 and a second side C2; the graph 50 includes a first branch graph 500 and a second branch graph 501; the first branch graph 500 includes a first main body structure 502, a first turning structure 503 and a second turning structure 507, and the second branch graph 501 includes a second main body structure 506, a first turning structure 503 and a second turning structure 507; the first body structure 502 and the second body structure 506 have a first spacing L1 therebetween, adjacent body structures of adjacent patterns 50 have a second spacing L2 therebetween, and the first spacing L1 and the second spacing L2 are different; wherein the first end 502a of the first main body structure 502 is connected to the first turning structure 503, and the second end 502b of the first main body structure 502 is connected to the second turning structure 507; a first end 506a of the second main body 506 is connected to the first turning structure 503, and a second end 506b of the second main body 506 is connected to the second turning structure 507; to adjust the spacing between adjacent branching pattern ends 500a and 501a and 500b and 501b between the first spacing L1 and the second spacing L2.
Preferably, in this embodiment, as shown in fig. 19, the first distance L1 is smaller than the second distance L2, the distance between the first extension portion 505 of the first branch pattern 500 and the first extension portion 505 of the second branch pattern 501 is larger than the first distance L1, and the distance between the second extension portion 509 of the first branch pattern 500 and the second extension portion 509 of the second branch pattern 501 is larger than the first distance L1.
In summary, the layout pattern with double pitch and the forming method thereof of the present invention have the following advantages: according to the invention, through the special design of the graph, the graph comprises a first branch graph and a second branch graph, the first branch graph comprises a first main body structure and a first turning structure, the second branch graph comprises a second main body structure and a second turning structure, the first turning structure is designed on the first end part of the first main body structure, the second turning structure is designed on the second end part of the second main body structure so as to adjust the distance between the end parts of the adjacent branch graphs, and the electrical contact between a metal plug formed on the end part of the branch graph and the adjacent branch graph is avoided, so that the problem that the forming position of the metal plug has a certain offset compared with the branch graph is solved, and the electrical conductivity of the metal plug is greatly improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A layout pattern having a double pitch, the layout pattern comprising:
a semiconductor substrate; and
a plurality of patterns formed on the semiconductor substrate, the patterns having a first side and a second side, the patterns including a first branch pattern and a second branch pattern, wherein the first branch pattern includes a first main structure and a first turning structure, the second branch pattern includes a second main structure and a second turning structure, a first space is formed between the first main structure and the second main structure, a second space is formed between adjacent main structures of adjacent patterns, and the first space and the second space are different; the first end part of the first main body structure is connected with the first turning structure, and the second end part of the second main body structure is connected with the second turning structure, so that the distance between the end parts of the adjacent branch patterns is adjusted between the first distance and the second distance;
the layout graph further comprises a first metal bolt connected to the end part of the first branch graph and a second metal bolt connected to the end part of the second branch graph, and the first metal bolt and the second metal bolt are respectively positioned on two parallel side edges of the end part of the branch graph.
2. The layout pattern with double pitch as claimed in claim 1, wherein the first branch pattern further comprises a second turning structure connected to the second end of the first main structure; the second branch pattern further comprises a first inflection structure connected to the first end of the second body structure.
3. The layout pattern with double pitch as claimed in claim 1, wherein the first turning structure of the first branch pattern comprises: the first main body structure comprises a first turning part connected with a first end part of the first main body structure and a first extending part connected with the first turning part, wherein the first turning part is provided with an orthographic projection along the first side; the second turning structure of the second branch pattern includes: the second main structure comprises a second turning part connected with the second end part of the second main structure and a second extending part connected with the second turning part, wherein the second turning part is provided with an orthographic projection along the second side.
4. The layout pattern with double pitch of claim 3, wherein the first pitch is greater than the second pitch, a pitch between the first extension portion of the first branch pattern and the second body structure of the second branch pattern is smaller than the first pitch, and a pitch between the second extension portion of the second branch pattern and the first body structure of the first branch pattern is smaller than the first pitch.
5. The layout pattern with double pitch of claim 3, wherein the first pitch is smaller than the second pitch, a pitch between the first extension portion of the first branch pattern and the second body structure of the second branch pattern is larger than the first pitch, and a pitch between the second extension portion of the second branch pattern and the first body structure of the first branch pattern is larger than the first pitch.
6. The layout pattern with double pitch as claimed in claim 1, wherein the first turning structure of the first branch pattern and the second turning structure of the second branch pattern are distributed with central symmetry.
7. A method of forming a layout pattern having a double pitch, the method comprising:
step 1) providing a semiconductor substrate, and forming a pattern material layer on the semiconductor substrate;
step 2) forming a plurality of first mask patterns on the pattern material layer, wherein the first mask patterns have a first lateral direction and a second lateral direction, each first mask pattern comprises a first side wall and a second side wall, each first side wall comprises a first side wall main body structure and a first side wall turning structure connected with a first end of the first side wall main body structure, each second side wall comprises a second side wall main body structure and a second side wall turning structure connected with a second end of the second side wall main body structure, a first gap is formed between each first side wall main body structure and each second side wall main body structure, a second gap is formed between adjacent side wall main body structures of adjacent first mask patterns, and the first gaps and the second gaps are different;
step 3) forming a second mask pattern on the side wall of the first mask pattern, wherein the second mask pattern comprises a first branch mask pattern having the same outer contour as the first side wall and a second branch mask pattern having the same outer contour as the second side wall;
step 4) removing the first mask pattern, and etching the pattern material layer through the second mask pattern to form a pattern in the pattern material layer, wherein the pattern has a first side and a second side, the pattern comprises a first branch pattern with the same structure as the first branch mask pattern and a second branch pattern with the same structure as the second branch mask pattern, the first branch pattern comprises a first main body structure and a first turning structure, and the second branch pattern comprises a second main body structure and a second turning structure; a first distance is formed between the first main body structure and the second main body structure, a second distance is formed between adjacent main body structures of adjacent graphs, and the first distance and the second distance are different; the first end part of the first main body structure is connected with the first turning structure, and the second end part of the second main body structure is connected with the second turning structure, so that the distance between the end parts of the adjacent branch patterns is adjusted between the first distance and the second distance;
the forming method further comprises a step of forming a first metal bolt at the end part of the first branch pattern and a step of forming a second metal bolt at the end part of the second branch pattern, wherein the first metal bolt and the second metal bolt are respectively positioned at two parallel side edges of the end part of the branch pattern.
8. The method as claimed in claim 7, wherein the first sidewall further comprises a second sidewall hinge structure connected to the second end of the first sidewall main structure; the second sidewall further includes a first sidewall-turning structure connected to the first end of the second sidewall body structure.
9. The method as claimed in claim 7, wherein the first sidewall-turning structure of the first sidewall comprises: the first side wall main structure comprises a first side wall turning part connected with a first end part of the first side wall main structure and a first side wall extending part connected with the first side wall turning part, wherein the first side wall turning part has an orthographic projection along the first side direction; the second sidewall transition structure of the second sidewall comprises: the second side wall main structure comprises a second side wall turning part connected with the second end part of the second side wall main structure and a second side wall extending part connected with the second side wall turning part, wherein the second side wall turning part has a positive projection along the second side direction.
10. The method as claimed in claim 9, wherein the first gap is larger than the second gap, a gap between the first sidewall extension of the first sidewall and the second sidewall body of the second sidewall is smaller than the first gap, and a gap between the second sidewall extension of the second sidewall and the first sidewall body of the first sidewall is smaller than the first gap.
11. The method as claimed in claim 9, wherein the first gap is smaller than the second gap, the gap between the first sidewall extension of the first sidewall and the second sidewall body of the second sidewall is larger than the first gap, and the gap between the second sidewall extension of the second sidewall and the first sidewall body of the first sidewall is larger than the first gap.
12. The method as claimed in claim 7, wherein the first sidewall-turn structures of the first sidewall and the second sidewall-turn structures of the second sidewall are distributed in a central symmetry.
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| US20140167290A1 (en) * | 2008-06-17 | 2014-06-19 | Sang-Yong Park | Methods of forming fine patterns in the fabrication of semiconductor devices |
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| CN101252103A (en) * | 2006-12-29 | 2008-08-27 | 东部高科股份有限公司 | Flash memory device and method of forming the device |
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