CN109991811A - A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions - Google Patents

A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions Download PDF

Info

Publication number
CN109991811A
CN109991811A CN201910145917.3A CN201910145917A CN109991811A CN 109991811 A CN109991811 A CN 109991811A CN 201910145917 A CN201910145917 A CN 201910145917A CN 109991811 A CN109991811 A CN 109991811A
Authority
CN
China
Prior art keywords
methyl
acid
solvent
basic group
dispersion inhibitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910145917.3A
Other languages
Chinese (zh)
Inventor
顾大公
毛智彪
许从应
马潇
陈玲
朱胜恺
齐国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Nata Opto Electronic Material Co Ltd
Original Assignee
Jiangsu Nata Opto Electronic Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Nata Opto Electronic Material Co Ltd filed Critical Jiangsu Nata Opto Electronic Material Co Ltd
Priority to CN201910145917.3A priority Critical patent/CN109991811A/en
Publication of CN109991811A publication Critical patent/CN109991811A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F120/00Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F120/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F120/10Esters
    • C08F120/34Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

The invention discloses a kind of sour dispersion inhibitor and preparation method thereof and photoetching compositions, sour dispersion inhibitor is using (methyl) acrylate as structural unit, in the fluoropolymer resin for wherein introducing basic group formation.By (methyl) acrylate monomer with basic group, under the conditions of existing for the radical initiator, copolyreaction is carried out by heating and is prepared, can be used for preparing photoetching compositions.The present invention provides one kind with acid dispersion inhibitor existing for polymer form, it can control the light acid diffusion of non-exposed area;Distribution in photoresist itself can more effectively be improved simultaneously, photoresist resolution ratio and line width roughness is improved, improve the film forming ability of photoresist.

Description

A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions
Technical field
The present invention relates to a kind of high molecular polymers and preparation method thereof, and in particular to it is a kind of acid dispersion inhibitor resin and Preparation method, and the purposes of sour dispersion inhibitor resin.
Background technique
Three important parameters of photoresist include resolution ratio, sensitivity, line width roughness, they determine photoresist in core Process window when piece manufactures.As semiconductor core piece performance is constantly promoted, exponentially type increases the integrated level of integrated circuit, collection It is constantly reduced at the figure in circuit.In order to make smaller size of figure, it is necessary to which the above three performance for improving photoresist refers to Mark.According to Rayleigh equation formula, the resolution ratio of photoresist can be improved using the light source of short wavelength in a lithographic process.Photoetching process Optical source wavelength from 365nm(I- line) develop to 248nm(KrF), 193nm(ArF), 13nm(EUV).For the spirit for improving photoresist Sensitivity, KrF, ArF of mainstream, EUV lithography glue use chemical amplification type photosensitive resin at present.
Studies have shown that control light acid diffusion is to improve resolution ratio and reduce line after chemical amplification photo etching glue exposure The important means of broad and rough rugosity.Improve control light acid diffusivity approach first is that using acid-base neutralization principle, use alkali Property compound lower light acid range of scatter, this kind of alkali compounds is referred to as sour dispersion inhibitor.
Acid activity resin, photosensitizer, sour dispersion inhibitor are the main components in photoetching glue formula.In the prior art, amine Class molecule is one of the key component of control acid diffusion.However amine molecule and photoetching gum resin have biggish difference in structure It is different, cause amine molecule that cannot be distributed evenly in photoresist film very much, reduces the resolution ratio and line width roughness of photoresist. On the other hand, in order to reach preferable etch resistance energy, it will use the non-aromatic of a large amount of phenyl ring or large volume in photoetching gum resin Caged scaffold.These structures are easy to cause the intersolubility between high-molecular compound to mismatch, and film forming ability is poor, photoresist occur The problems such as film embrittlement, peeling.Simultaneously there is pollution photoetching when being applied to immersion lithography process with filtered air in the alkali compounds of small molecule The possibility of glue camera lens causes serious consequence.
Therefore, develop that a kind of sour dispersion inhibitor distribution is fixed, acid diffusion rejection ability is high and with acid activity resinousness The good sour dispersion inhibitor of matter matching, film forming ability is imperative, this will provide necessity for the exploitation of subsequent liquid immersion lithography glue Basis.
Summary of the invention
Goal of the invention of the invention is to provide a kind of sour dispersion inhibitor, has it when being applied to photoetching compositions Distribution is fixed, acid diffusion rejection ability is high and matches with acid activity resin properties, the feature that film forming ability is good;Of the invention is another One goal of the invention is to provide the preparation method of this sour dispersion inhibitor;Another goal of the invention of the invention is to provide acid diffusion The photoetching compositions of inhibitor preparation.
To achieve the above object of the invention, the technical solution adopted by the present invention is that: it is a kind of acid dispersion inhibitor, it is with (first Base) acrylate be structural unit, wherein introduce basic group formed fluoropolymer resin, general structure be (I) or (II):
(I),(II)
In formula, the integer that n is 2~30, the selection of n so that weight average molecular weight between 100~30000g/mol;naIt is alkylidene Carbon atom number, naIt is 1~20;R1、R2It is hydrogen, carbon atom number is that alkyl, aryl or sulfur-bearing, oxygen, azepine between 1~20 are former One of substituent group of son is a variety of.
In above-mentioned technical proposal, on the basis of (methyl) acrylate, introduces the monomer containing basic group and form sour expansion Dissipate inhibitor film-forming resin.Since basic group is fixed on high molecular resin structure, and structure and acid activity resin Structure proximate, this enables acid inhibitor to be evenly distributed in photoresist film.The resinoid shows outstanding light acid diffusion Rejection ability improves photoresist resolution ratio and line width roughness;The water solubility for reducing photoresist component, improves the film forming of photoresist Ability avoids photoetching machine lens from staiing.
In above-mentioned technical proposal, R1、R2It is carbon atom number is straight chained alkyl between 1~20, one in naphthenic base or aryl Kind is a variety of.
Specifically, R1、R2Nitrogen-containing functional group with N atomic building is n-butylamine-based, tert-butylamine base, dimethylamino, diethylamine Base, diη-propyl, diisopropylamino, di-n-butylamine base, di-iso-butylmanice base, two tert-butylamine bases, cyclopenta amido, cyclo-hexylamine Base, phenylmethanamine base, phenylethylamine base, phenyl n-propylamine base, phenyl n-butylamine-based, Phenyl-tertiary-butylamine base, diphenyl amido, two One of (p-methoxyphenyl) amido, two (to tertiary butoxyphenyl) amidos are a variety of.
R1、R2It is as follows with the preferred structure of nitrogen-containing functional group of N atomic building:
Another goal of the invention to realize the present invention provides a kind of preparation method of sour dispersion inhibitor, by with alkali Property group (methyl) acrylate monomer, under the conditions of existing for the radical initiator, pass through heating and carry out copolyreaction system Standby to form, the general structure of described (methyl) acrylate with basic group is (III) or (IV):
(III) or(IV)
In formula, nbIt is the chain length for the alkyl that carbon atom number is between 1~20.
In above-mentioned technical proposal, R1、R2It is carbon atom number is straight chained alkyl between 1~20, one in naphthenic base or aryl Kind is a variety of.
Preferably, R1、R2Nitrogen-containing functional group with N atomic building is n-butylamine-based, tert-butylamine base, dimethylamino, diethylamine Base, diη-propyl, diisopropylamino, di-n-butylamine base, di-iso-butylmanice base, two tert-butylamine bases, cyclopenta amido, cyclo-hexylamine Base, phenylmethanamine base, phenylethylamine base, phenyl n-propylamine base, phenyl n-butylamine-based, Phenyl-tertiary-butylamine base, diphenyl amido, two One of (p-methoxyphenyl) amido, two (to tertiary butoxyphenyl) amidos are a variety of.
Preferably, the structure of (methyl) acrylate monomer of basic group may be, but not limited to:
Above-mentioned (methyl) acrylate monomer with basic group the preparation method is as follows: by the long-chain chemical combination containing basic group Object is under the action of acid binding agent, and the reaction of (methyl) acryloyl chloride is prepared, comprising the following steps:
(1) long-chain compound, acid binding agent and solvent containing basic group are configured to solution, mixed liquor to temperature is controlled -20 ~80 DEG C, the molar ratio of long-chain compound, acid binding agent and solvent containing basic group is 1:(1 ~ 1.5): (4 ~ 16);
(2) at -20~80 DEG C, agitation and dropping (methyl) acryloyl chloride, time for adding is 1 ~ 5h, the long-chain containing basic group The molar ratio of compound and (methyl) acryloyl chloride is 1:(1 ~ 1.2)
(3) after being added dropwise, continue to react 2 ~ 20h at -20~80 DEG C;
(4) after the reaction was completed to room temperature, reaction solution is washed 2 times with aqueous sodium carbonate, and pure water 2 times, saturated common salt washing It washs 1 time, anhydrous sodium sulfate is dry, concentration, distills (methyl) acrylate for obtaining and having basic group.
In above-mentioned technical proposal, the solvent is ethyl acetate, butyl acetate, butyl acetate, acetic acid peopentyl ester, lactic acid second Ester, propylene glycol methyl ether acetate, propylene glycol list Acetic Ester, dihydroxypropane single-ether, propylene glycol methyl ether acetate, tirethylene glycol first Ether, tirethylene glycol ether, tetrahydrofuran, methyltetrahydrofuran, chloroform, methylene chloride, 1,2- dichloroethanes, just oneself Alkane, pentane, normal heptane, acetone, cyclohexanone, methyl ethyl ketone, methyl iso-butyl ketone (MIBK), toluene, dimethylbenzene, paraxylene or connection One of benzene is a variety of.
Above-mentioned acid dispersion inhibitor film-forming resin the preparation method is as follows: (methyl) acrylate list with basic group In body dissolution solvent, under the conditions of existing for the initiator, carries out polymerization reaction and is prepared, comprising the following steps:
(1) (methyl) acrylate monomer of basic group is dissolved in solvent, heating mixed liquor to temperature is 40~90 DEG C, the molar ratio of monomer and solvent is 1:(4-16);
(2) by quality be comonomer quality 0.3%~15% initiator dissolution solvent in, obtain it is prefabricated, initiator with it is molten The molar ratio of agent is 1:(4-16)
(3) initiator solution that step (2) obtain is added drop-wise to it is preheated containing in the mixed liquor containing monomer in step (1), 40 ~90 DEG C constant temperature back flow reaction 2~30 hours;
(4) it is cooled to room temperature after the reaction was completed, with nonpolar solvent precipitated resin, filtering drying obtains sour dispersion inhibitor.
In above-mentioned technical proposal, initiator is the radical initiator of azo initiator, peroxide, and preferred azo draws Sending out agent is azodiisobutyronitrile or azobisisoheptonitrile, and the radical initiator of preferred peroxide is that tert-butyl hydroperoxide is special Valerate, tertiary fourth oxygen hydrogen peroxide, benzoic acid hydrogen peroxide or benzoyl peroxide etc.;The initiator amount is comonomer The 0.3% ~ 15% of gross mass;The adding manner of initiator is that monomer and partial solvent is first added, and is then heated to polymerization temperature, then Initiator solution is added dropwise.The temperature of polymerization reaction controls between 40 ~ 90 DEG C according to the solvent used and initiator difference, gathers The time is closed also according to the solvent used and initiator difference, is controlled between 2 ~ 30 hours.
The copolyreaction of sour dispersion inhibitor film-forming resin can be carried out in various solvents or multi-solvents mixing species, these Solvent includes methanol, ethyl alcohol, dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, methyltetrahydrofuran, benzene, toluene, diformazan Benzene, chloroform, dichloroethanes, trichloroethanes etc..
It, can be in pure water, methanol, methanol/water mixture, second after the copolyreaction of sour dispersion inhibitor film-forming resin Alcohol, ethanol/water mixture, isopropanol, iso-propanol/water mixture, normal heptane, n-hexane, hexamethylene, pentane, petroleum ether, second The organic or inorganic solvents kind precipitation and separation such as ether, methyl tertiary butyl ether(MTBE), the yield for being dried in vacuo rear copolymer is 60% ~ 90%.
Sour dispersion inhibitor of the invention can be used for preparing photoetching compositions, and the photoetching compositions are at least by one kind Sour dispersion inhibitor, a kind of film-forming resin with acid activity, a kind of photosensitizer and organic solvent are constituted, and the acid diffusion inhibits Agent be it is above-mentioned using (methyl) acrylate as structural unit, wherein introduce basic group formation fluoropolymer resin;To improve Effect can be added other acid inhibitors and be used in combination.
It is calculated in mass percent, the content of sour dispersion inhibitor is 0.001 ~ 10%, the film forming with acid activity in composition The content of resin is that the content of 1 ~ 20%, photosensitizer is 0.01 ~ 10%, remaining is organic solvent.
The configuration method of photoetching compositions is: at room temperature, in a clean vial, according to formula rate elder generation Acid activity resin, photosensitizer, acid inhibitor resin and solvent, mixture are added afterwards to be protected from light concussion in bottle 16~96 hours, make It is sufficiently dissolved;Then photoresist solution successively is filtered with 0.5 micron and nylon material below and the filter of UPE material; Filtrate is collected in a clean vial, and required photoetching compositions are obtained.Lithography experiments are carried out after the completion.
Above-mentioned acid activity resin is polymerized by multiple functional groups, includes acid activity group and polar group.Acid is living The general structure of property resin is as follows:
The molecular weight of acid activity film-forming resin is 3000 ~ 100000, and molecular weight distribution is between 1.0-3.0.Wherein acid activity base The content of the monomer of group is between 30%-70%, and the content of monomer of polar group is between 70-30%.Preferably 50:50.
Containing the acid-labile group of different substituents, specially acid activity (methyl) acrylate, structure in acid activity resin To meet at least one of chemical general formula monomer, specific acid activity monomer structure general formula is as follows:
R1The carbochain of=H or carbon atom number in 1-20.R2=acid-sensitive level Four carbon.
Specifically, R2It is a kind of level Four ester of carbon atom number between 6-30, the carbon atom being connected with ester bond oxygen atom Hydrogen atom all replaced by other groups, possible structure be tertiary butyl ester, substituted tert-butyl ester, alkyl-substituted Buddha's warrior attendant Alkyl ester, alkyl-substituted adamantane derivative ester, alkyl-substituted norbornyl ester, alkyl-substituted norborneol derivative ester, alkane Cyclic alkyl ester, alkyl-substituted cyclic alkyl derivative ester that base replaces etc. are one such or a variety of.
Contain one or more polar groups, specially (methyl) acrylate of polar functionalities, knot in acid activity resin Structure is to meet at least one of chemical general formula monomer, and specific polar monomer general structure is as follows:
R3The carbochain of=H or carbon atom number in 1-20.R4(methyl) acrylate of=polar functionalities.
Specifically, R4For carbon atom number between 6 ~ 30 the ring-type, caged of hydroxyl or straight chain type containing carbon structure and all kinds of Lactone structure, possible structure are the Buddha's warrior attendant alkyl ester containing one or more independent hydroxyls, the ring containing one or more independent hydroxyls Own ester, the ring pentyl ester containing one or more independent hydroxyls, the polycyclic ester type compound containing one or more independent hydroxyls, containing 1 or The caged ester type compound of multiple independent hydroxyls, valerolactone, replaces valerolactone, caprolactone, replaces caprolactone, containing gold butyrolactone Lactone, the lactone containing multiring structure, the lactone containing cage structure of rigid alkyl structure etc. are one such or a variety of.
Acid activity film-forming resin the preparation method is as follows: under the conditions of comonomer is existing for the radical initiator, molten Polymerization reaction is carried out in agent to be prepared.In the polymerization reaction of acid activity film-forming resin, initiator is azo initiator, peroxidating The radical initiator of object, preferred azo initiator are azodiisobutyronitrile or azobisisoheptonitrile, preferred peroxide Radical initiator be tert-butyl hydroperoxide pivalate, tertiary fourth oxygen hydrogen peroxide, benzoic acid hydrogen peroxide or peroxide benzene Formyl etc.;The initiator amount is the 0.3% ~ 15% of comonomer gross mass;The adding manner of initiator is that monomer is first added And partial solvent, it is then heated to polymerization temperature, then initiator solution is added dropwise.The temperature of polymerization reaction according to the solvent that uses and Initiator is different, controls between 40~90 DEG C, and polymerization time is different also according to the solvent used and initiator, control 4 ~ Between 32 hours.
The copolyreaction of acid activity film-forming resin can be carried out in various solvents or multi-solvents mixing species, these solvent packets Include methanol, ethyl alcohol, dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, methyltetrahydrofuran, benzene,toluene,xylene, chlorine Imitative, dichloroethanes, trichloroethanes etc..
After the copolyreaction of acid activity film-forming resin, can pure water, methanol, methanol/water mixture, ethyl alcohol, ethyl alcohol/ Aqueous mixtures, isopropanol, iso-propanol/water mixture, normal heptane, n-hexane, hexamethylene, pentane, petroleum ether, ether, methyl The organic or inorganic solvents kind precipitation and separation such as tertbutyl ether, the yield for being dried in vacuo rear copolymer is 50% ~ 80%.
The sour dispersion inhibitor used is a kind of nitrogenous compound, including primary amine, secondary amine and tertiary amine compound, is especially had There are the amine compounds of hydroxyl, ehter bond, ester bond, amido bond, lactonic ring, cyano or sulfonic acid ester bond, may be structure diethylamine, three second One of the fatty amines or aromatic amine such as amine, ethanol amine, triethanolamine, aniline, phenyl ethylamine are a variety of.
The more sulfosalt photo-acid generators of above-mentioned acid activity resin, long flexible chain and acid diffusion suppression can be dissolved comprising one kind The organic solvent of preparation is propylene glycol methyl ether acetate, propylene glycol list Acetic Ester, dihydroxypropane single-ether, propylene glycol monomethyl ether acetic acid Ester, tirethylene glycol methyl ether, tirethylene glycol ether, butyl acetate, acetic acid peopentyl ester, ethyl lactate, methyl ethyl ketone and first One of base isobutyl ketone is a variety of.
Due to the above technical solutions, the present invention has the following advantages over the prior art:
1, the present invention provides one kind with acid dispersion inhibitor existing for polymer form.The sour dispersion inhibitor one of it and routine Sample equally can control the light acid diffusion of non-exposed area;Other small molecule organic bases are different from simultaneously, can more effectively improve itself Distribution in photoresist improves photoresist resolution ratio and line width roughness, improves the film forming ability of photoresist.
2, compared to organic bases inhibitor, dissolubility is lower in water for acid dispersion inhibitor existing for polymer form, Such resinoic acid dispersion inhibitor can reduce photoresist leaching rate, photoetching machine lens is avoided to stain in liquid immersion lithography.
Specific embodiment
The present invention will be further described below with reference to examples:
Embodiment one: a kind of (methyl) acrylate with basic group
The preparation method is as follows: being equipped at one in cooling round-bottomed flask, N, N- dimethylethanolamine, triethylamine 34g is added With 150g methylene chloride, mixed liquor is cooled to 0 DEG C.Then 28g(methyl is added dropwise under stiring) acryloyl chloride, it is precipitated a large amount of solid Body.After adding, continue to stir 2h.Then reaction solution is made to be slowly increased to room temperature, using saturated aqueous sodium carbonate washing 2 times, often Secondary 200mL;Then 150mL pure water 2 times;Last 150mL saturated salt solution washed once.Organic phase anhydrous sodium sulfate is dry Dry, concentration, distillation obtain 27gN, N- dimethyl ethanol base (methyl) acrylate, yield 76%.Nuclear-magnetism result:1H NMR (CDCl3, δ) and 2.11, s, 3H;2.96, s, 6H;3.44, t, 2H;4.43, t, 2H;5.5, s, 1H;6.5, s, 1H.
Embodiment two: a kind of sour dispersion inhibitor film-forming resin containing basic group, by copolymerized monomers, in free radical Under the conditions of initiator is existing, copolyreaction is carried out by heating and is prepared:
The preparation method is as follows: adding in the 500mL four-hole bottle for being equipped with the magnetic stirrer with heating, condenser pipe, thermometer at one Enter 50g N, N- dimethyl amine methyl acrylate and methyl ethyl ketone 300g.Mixture stirs 10 minutes under a nitrogen, then It is heated to 65 ~ 70 DEG C.Then the methyl ethyl ketone of 2.5g azodiisobutyronitrile (AIBN) and 50g is added dropwise to reaction system in 10 minutes Solution.The reaction was continued after adding 8 ~ 12h of reflux, is then cooled to room temperature.Mixture is precipitated in electron level n-hexane, is filtered. Polymer solids 200g electronic grade acetone dissolves, and precipitates in electron level n-hexane again, and it is solid that polymer is obtained after filtration drying Body, yield 70%, molecular weight 2465, molecular weight distribution 1.45.
Embodiment three: the present embodiment be Application Example of the invention, modulate it is a kind of containing sour dispersion inhibitor resin just Property chemical amplification photoresist, formula composition are as follows:
Sour dispersion inhibitor resin is the resin in embodiment two.
Acid activity resin is to include 2 kinds of acid activity groups and 2 kinds of polar groups, ratio 50:50.
Photosensitizer is perfluoro butyl sulfonic acid triphenyl sulfosalt.
Solvent is PGMEA:PGME=6:4.
Specific formula modulator approach:
In a new clean 100mL vial, 8.5g acid activity resin, 0.21g perfluoro butyl sulfonic acid triphenyl is added Sulfosalt, 0.06g acid dispersion inhibitor resin, 54gPGMEA, 36gPGME.At room temperature, mixture shakes 24 hours in bottle, Dissolve it sufficiently.Then photoresist solution successively is filtered with 0.22 micron and 0.02 micron of filter.Light is carried out after the completion Carve experiment.
Lithography experiments method: the photoresist of above-mentioned preparation is rotated on 8 " silicon wafers with 2000 ~ 3000 revs/min of speed Film is toasted 90 seconds on 120 DEG C of hot plates, is then exposed on exposure machine, exposure intensity 10-50mJ/cm2.In 110 DEG C of heat after exposure It is toasted on plate 90 seconds, finally develops 60 seconds in 2.38%TMAH developer solution, then dry in Electron microscopy photoetching knot Fruit.
Acid dispersion inhibitor provided by the invention resin is a kind of acid inhibitor of polymer electrolyte, can control non-exposure very well The light acid in light area is spread;Distribution is good in the photoresist simultaneously, and is not easy to be precipitated in camera lens liquid, matches in ArF photoresist It has a good application prospect in side.

Claims (10)

1. a kind of acid dispersion inhibitor, it is characterised in that: it is introduced wherein using (methyl) acrylate as structural unit The fluoropolymer resin that basic group is formed, general structure are (I) or (II):
(I),(II)
In formula, the integer that n is 2~30, the selection of n so that weight average molecular weight between 100~30000g/mol;naIt is alkylidene Carbon atom number, naIt is 1~20;R1、R2It is hydrogen, carbon atom number is that alkyl, aryl or sulfur-bearing, oxygen, azepine between 1~20 are former One of substituent group of son is a variety of.
2. acid dispersion inhibitor according to claim 1, it is characterised in that: R1、R2Be carbon atom number be 1~20 between One of straight chained alkyl, naphthenic base or aryl are a variety of.
3. acid dispersion inhibitor according to claim 1 or 2, it is characterised in that: R1、R2With the nitrogenous function of N atomic building The structure of group is selected from:
4. in claim 1-3 it is any acid dispersion inhibitor preparation method, it is characterised in that: it is described acid dispersion inhibitor be by (methyl) acrylate monomer with basic group is dissolved in solvent, under the conditions of existing for the initiator, polymerize anti- It should be prepared, comprising the following steps:
(1) (methyl) acrylate monomer of basic group is dissolved in solvent, heating mixed liquor to temperature is 40~90 DEG C, the molar ratio of monomer and solvent is 1:(4~16);
(2) 0.3%~15% initiator that quality is comonomer quality is dissolved in solvent, obtains initiator solution, draws The molar ratio for sending out agent and solvent is 1:(4~16);
(3) initiator solution that step (2) obtain is added drop-wise in step (1) in the preheated mixed liquor containing monomer, 40~ 90 DEG C constant temperature back flow reaction 2~30 hours;
(4) it is cooled to room temperature after the reaction was completed, with nonpolar solvent precipitated resin, filtering drying obtains sour dispersion inhibitor.
5. the preparation method of acid dispersion inhibitor according to claim 4, it is characterised in that: the initiator is azo two Isobutyronitrile, azobisisoheptonitrile, tert-butyl hydroperoxide pivalate, tertiary fourth oxygen hydrogen peroxide, benzoic acid hydrogen peroxide or peroxide One of benzoyl is a variety of;
The solvent is ethyl acetate, butyl acetate, butyl acetate, acetic acid peopentyl ester, ethyl lactate, propylene glycol monomethyl ether acetic acid Ester, propylene glycol list Acetic Ester, dihydroxypropane single-ether, propylene glycol methyl ether acetate, tirethylene glycol methyl ether, tirethylene glycol second Ether, tetrahydrofuran, methyltetrahydrofuran, chloroform, methylene chloride, 1,2- dichloroethanes, n-hexane, pentane, normal heptane, One of acetone, cyclohexanone, methyl ethyl ketone, methyl iso-butyl ketone (MIBK), toluene, dimethylbenzene, paraxylene or biphenyl are a variety of;
The general structure of described (methyl) acrylate with basic group is (III) or (IV):
(III),(IV)
In formula, nbIt is the carbon atom number of alkylidene, nbIt is 1~20;R1、R2Be hydrogen, carbon atom number be 1~20 between alkyl, virtue Base or sulfur-bearing, oxygen, nitrogen heteroatom one of substituent group or a variety of.
6. the preparation method of acid dispersion inhibitor according to claim 5, it is characterised in that: R1、R2Be carbon atom number be 1 One of straight chained alkyl, naphthenic base or aryl between~20 are a variety of.
7. the preparation method of acid dispersion inhibitor according to claim 5 or 6, it is characterised in that: with basic group Contain long-chain and basic functionality in its structure of (methyl) acrylate, structure is as follows:
8. the preparation method of acid dispersion inhibitor according to claim 7, it is characterised in that: described with basic group (methyl) acrylate be by the long-chain compound containing basic group under the action of acid binding agent, and (methyl) acryloyl chloride reaction It is prepared, comprising the following steps:
(1) long-chain compound, acid binding agent and solvent containing basic group are configured to solution, mixed liquor to temperature is controlled -20 ~80 DEG C, the molar ratio of long-chain compound, acid binding agent and solvent containing basic group is 1:(1 ~ 1.5): (4 ~ 16);
(2) at -20~80 DEG C, agitation and dropping (methyl) acryloyl chloride, time for adding is 1 ~ 5h, the long-chain containing basic group The molar ratio of compound and (methyl) acryloyl chloride is 1:(1 ~ 1.2);
(3) after being added dropwise, continue to react 2 ~ 20h at -20~80 DEG C;
(4) after the reaction was completed to room temperature, reaction solution is washed 2 times with aqueous sodium carbonate, and pure water 2 times, saturated common salt washing It washs 1 time, anhydrous sodium sulfate is dry, concentration, distills (methyl) acrylate for obtaining and having basic group;
Wherein, the solvent is ethyl acetate, butyl acetate, butyl acetate, acetic acid peopentyl ester, ethyl lactate, propylene glycol monomethyl ether Acetate, propylene glycol list Acetic Ester, dihydroxypropane single-ether, propylene glycol methyl ether acetate, tirethylene glycol methyl ether, tirethylene glycol Ether, tetrahydrofuran, methyltetrahydrofuran, methanol, ethyl alcohol, the tert-butyl alcohol, isopropanol, acetone, cyclohexanone, methyl ethyl ketone, first One of base isobutyl ketone, toluene, dimethylbenzene, paraxylene or biphenyl are a variety of.
9. a kind of photoetching compositions, it is characterised in that: in the photoetching compositions, include at least a kind of claims 1 to 3 In any sour dispersion inhibitor, a kind of film-forming resin with acid activity, a kind of photosensitizer and organic solvent.
10. photoetching compositions according to claim 9, it is characterised in that: the photoetching compositions also include other Acid inhibitor is selected from n-butylamine, tert-butylamine, dimethyl amine, diethylamide, di-n-propylamine, diisopropylamine, di-n-butyl Amine, diisobutyl amine, di-t-butyl amine, Trimethylamine, triethylamine, Tri-n-Propylamine, triisopropylamine, tri-n-butyl amine, three Isobutylamine, tri-tert amine, ethanol amine, diethanol amine, triethanolamine, cyclopentamine, cyclohexylamine, morpholine, N- methyl ring penta Amine, methylaniline, ethyl aniline, n-butyl aniline, tert-butyl aniline, dimethylaniline, diethylaniline, dibutyl benzene, two One of phenylaniline is a variety of.
CN201910145917.3A 2019-02-27 2019-02-27 A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions Pending CN109991811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910145917.3A CN109991811A (en) 2019-02-27 2019-02-27 A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910145917.3A CN109991811A (en) 2019-02-27 2019-02-27 A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions

Publications (1)

Publication Number Publication Date
CN109991811A true CN109991811A (en) 2019-07-09

Family

ID=67130466

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910145917.3A Pending CN109991811A (en) 2019-02-27 2019-02-27 A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions

Country Status (1)

Country Link
CN (1) CN109991811A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111056947A (en) * 2019-12-28 2020-04-24 上海博栋化学科技有限公司 Photoresist resin monomer synthesized from α -cedrene and synthesis method thereof
CN111087515A (en) * 2019-12-31 2020-05-01 江苏汉拓光学材料有限公司 Resin compound, photoresist composition containing the same and synthesis method thereof
CN111138288A (en) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 Photoresist resin monomer containing five-membered ring β -ketone structure and synthetic method thereof
CN111205385A (en) * 2020-02-28 2020-05-29 宁波南大光电材料有限公司 Modified film-forming resin containing acid inhibitor, preparation method thereof and photoresist composition
CN111221218A (en) * 2020-02-28 2020-06-02 宁波南大光电材料有限公司 Acid diffusion inhibitor, preparation method thereof and photoresist composition
CN111285963A (en) * 2020-02-28 2020-06-16 宁波南大光电材料有限公司 Hydroxyl-containing acid diffusion inhibitor, preparation method thereof and photoresist composition
CN111302959A (en) * 2020-02-28 2020-06-19 宁波南大光电材料有限公司 Acid diffusion inhibitor with ester bond, preparation method thereof and photoresist composition
CN112159490A (en) * 2020-10-16 2021-01-01 中国医学科学院药用植物研究所 Polymer containing 2-morpholinyl ethyl methacrylate monomer unit and application
CN112521529A (en) * 2020-11-24 2021-03-19 同济大学 LED sensitive distyryl oxime ester photoinitiator and preparation and application thereof
CN112898170A (en) * 2021-01-22 2021-06-04 宁波南大光电材料有限公司 Preparation method of acid diffusion inhibitor and photoresist composition
CN112925166A (en) * 2021-01-22 2021-06-08 宁波南大光电材料有限公司 High-resolution photoresist
CN113214429A (en) * 2021-04-28 2021-08-06 中科院长春应化所黄埔先进材料研究院 ArF photoresist film-forming resin, preparation method thereof and photoresist composition
CN113296360A (en) * 2021-05-21 2021-08-24 上海邃铸科技有限公司 Acid inhibitor for photoresist composition, preparation method and photoresist composition
CN114315584A (en) * 2021-12-30 2022-04-12 宁波南大光电材料有限公司 Photosensitizer and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030044715A1 (en) * 2001-04-06 2003-03-06 Fuji Photo Film Co., Ltd. Positive photoresist composition
US20060074139A1 (en) * 2002-11-05 2006-04-06 Hiroyuki Ishii Acrylic copolymer and radiation-sensitive resin composition
CN102150082A (en) * 2008-09-10 2011-08-10 Jsr株式会社 Radiation-sensitive resin composition
JP2011164434A (en) * 2010-02-10 2011-08-25 Jsr Corp Radiation sensitive resin composition
JP2013256658A (en) * 2012-05-18 2013-12-26 Sumitomo Chemical Co Ltd Resin, resist composition and method for producing resist pattern
WO2018159560A1 (en) * 2017-03-01 2018-09-07 Jsr株式会社 Radiation-sensitive resin composition, resist pattern forming method, acid diffusion control agent, carboxylate salt and carboxylic acid

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030044715A1 (en) * 2001-04-06 2003-03-06 Fuji Photo Film Co., Ltd. Positive photoresist composition
US20060074139A1 (en) * 2002-11-05 2006-04-06 Hiroyuki Ishii Acrylic copolymer and radiation-sensitive resin composition
CN102150082A (en) * 2008-09-10 2011-08-10 Jsr株式会社 Radiation-sensitive resin composition
JP2011164434A (en) * 2010-02-10 2011-08-25 Jsr Corp Radiation sensitive resin composition
JP2013256658A (en) * 2012-05-18 2013-12-26 Sumitomo Chemical Co Ltd Resin, resist composition and method for producing resist pattern
WO2018159560A1 (en) * 2017-03-01 2018-09-07 Jsr株式会社 Radiation-sensitive resin composition, resist pattern forming method, acid diffusion control agent, carboxylate salt and carboxylic acid

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111138288A (en) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 Photoresist resin monomer containing five-membered ring β -ketone structure and synthetic method thereof
CN111056947A (en) * 2019-12-28 2020-04-24 上海博栋化学科技有限公司 Photoresist resin monomer synthesized from α -cedrene and synthesis method thereof
CN111087515A (en) * 2019-12-31 2020-05-01 江苏汉拓光学材料有限公司 Resin compound, photoresist composition containing the same and synthesis method thereof
WO2021169344A1 (en) * 2020-02-28 2021-09-02 宁波南大光电材料有限公司 Modified film-forming resin containing acid inhibitor, preparation method therefor, and photoresist composition
CN111205385A (en) * 2020-02-28 2020-05-29 宁波南大光电材料有限公司 Modified film-forming resin containing acid inhibitor, preparation method thereof and photoresist composition
CN111221218A (en) * 2020-02-28 2020-06-02 宁波南大光电材料有限公司 Acid diffusion inhibitor, preparation method thereof and photoresist composition
CN111285963A (en) * 2020-02-28 2020-06-16 宁波南大光电材料有限公司 Hydroxyl-containing acid diffusion inhibitor, preparation method thereof and photoresist composition
CN111302959A (en) * 2020-02-28 2020-06-19 宁波南大光电材料有限公司 Acid diffusion inhibitor with ester bond, preparation method thereof and photoresist composition
CN112159490A (en) * 2020-10-16 2021-01-01 中国医学科学院药用植物研究所 Polymer containing 2-morpholinyl ethyl methacrylate monomer unit and application
CN112159490B (en) * 2020-10-16 2022-03-11 中国医学科学院药用植物研究所 Polymer containing 2-morpholinyl ethyl methacrylate monomer unit and application
CN112521529A (en) * 2020-11-24 2021-03-19 同济大学 LED sensitive distyryl oxime ester photoinitiator and preparation and application thereof
CN112925166A (en) * 2021-01-22 2021-06-08 宁波南大光电材料有限公司 High-resolution photoresist
CN112898170A (en) * 2021-01-22 2021-06-04 宁波南大光电材料有限公司 Preparation method of acid diffusion inhibitor and photoresist composition
CN113214429A (en) * 2021-04-28 2021-08-06 中科院长春应化所黄埔先进材料研究院 ArF photoresist film-forming resin, preparation method thereof and photoresist composition
CN113214429B (en) * 2021-04-28 2022-04-12 广东粤港澳大湾区黄埔材料研究院 ArF photoresist film-forming resin, preparation method thereof and photoresist composition
CN113296360A (en) * 2021-05-21 2021-08-24 上海邃铸科技有限公司 Acid inhibitor for photoresist composition, preparation method and photoresist composition
CN114315584A (en) * 2021-12-30 2022-04-12 宁波南大光电材料有限公司 Photosensitizer and preparation method thereof

Similar Documents

Publication Publication Date Title
CN109991811A (en) A kind of acid dispersion inhibitor and preparation method thereof and photoetching compositions
WO2021169344A1 (en) Modified film-forming resin containing acid inhibitor, preparation method therefor, and photoresist composition
CN110058489A (en) A kind of photoetching compositions and preparation method thereof
JP5981099B2 (en) Photoresist composition and method for forming photolithography pattern
CN106133606B (en) Additive and resist lower membrane formation composition comprising the additive
JP2011215647A (en) Phenol/alicyclic type copolymer, and photoresist
EP2461213A1 (en) Polymers, photoresist compositions and methods of forming photolithographic patterns
JP5952029B2 (en) Photoresist composition and method for forming photolithography pattern
WO2007138893A1 (en) Positive resist composition and method for formation of resist pattern
WO2018079203A1 (en) Method for producing resin, and method for producing active ray-sensitive or radiation-sensitive composition
CN106200268A (en) Pattern formation method and light resistance composition
JP6757451B2 (en) Monomers, polymers, and photoresist compositions
CN103186044A (en) Additive for resist and resist composition comprising same
CN111302959A (en) Acid diffusion inhibitor with ester bond, preparation method thereof and photoresist composition
WO2008012999A1 (en) Positive resist composition and method of forming resist pattern
JP2009003242A (en) Chemically-amplified positive resist composition and hydroxystyrene derivative
JP2003233190A (en) Polymer with mixed photoacid-labile group and photoresist comprising the same
TW200424769A (en) Process for refining crude resin for resist
KR101204915B1 (en) Photoresist Polymer, Photoresist Composition Comprising the Same and Method for Forming Photoresist Pattern Using It
CN112592304B (en) Polymerizable photoacid generator containing double onium salt structure, preparation method and photoresist
JP2021113995A (en) Monomers, polymers and photoresist compositions
CN111285963A (en) Hydroxyl-containing acid diffusion inhibitor, preparation method thereof and photoresist composition
CN111221218A (en) Acid diffusion inhibitor, preparation method thereof and photoresist composition
JP2002275215A5 (en)
JP4434570B2 (en) Resin production method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20201211

Address after: 315800 21 Qingshan Road, Chaiqiao street, Beilun District, Ningbo City, Zhejiang Province

Applicant after: NINGBO NANDA OPTOELECTRONIC MATERIAL Co.,Ltd.

Address before: 7 / F, Yueliangwan International Center, 9 Cuiwei street, Suzhou Industrial Park, Suzhou, Jiangsu Province

Applicant before: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190709