CN109983350A - Mounting table and electronic device test set - Google Patents
Mounting table and electronic device test set Download PDFInfo
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- CN109983350A CN109983350A CN201780072416.6A CN201780072416A CN109983350A CN 109983350 A CN109983350 A CN 109983350A CN 201780072416 A CN201780072416 A CN 201780072416A CN 109983350 A CN109983350 A CN 109983350A
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- electronic device
- mounting table
- temperature
- test set
- potential difference
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2877—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
The present invention provides one kind and is able to suppress the raised electronic device test set of cost.Probe station (10) includes the mounting table (11) for loading carrier (C) or chip (W), the mounting table (11) includes the mounting table lid (27) for loading carrier (C), the cooling unit (29) abutted with the mounting table lid (27), with the LED illumination unit (30) across mounting table (27) and cooling unit (29) and carrier (C) relative configuration, mounting table lid (27) and cooling unit (29) are made of translucent material, the flowing in the cooling medium flow path (28) of cooling unit (29) of the cooling medium of light-permeable, LED illumination unit (30) includes the multiple LEDs (32) luminous towards carrier (C), carrier (C) is made of the glass substrate (24) of substantially circular plate type, multiple electronic devices (25) are each other across defined Interval configuration is on the surface of carrier (C).
Description
Technical field
The present invention relates to mounting tables and the electronic device test set for being provided with the mounting table, and wherein mounting table is for loading
It is formed with the substrate of electronic device or for loading the carrier for being configured with electronic device.
Background technique
It the problems such as in order to find defect in the manufacturing process of electronic device, is developed and is filled as electron device testing
The probe station (prober) set is used for the electronics being formed on the semiconductor wafer (hereinafter referred " chip ") as substrate
Device, or be cut into from chip and configure the electronic device on plate-shaped support and tested.
Probe station includes the probe card with multiple needle probes, the mounting table for loading chip or carrier and IC test
Machine makes each probe of probe card contact the electrode pad being correspondingly arranged with the electrode of electronic device or soldering salient point, will be from electricity
The signal of sub- device is transmitted on IC test machine, tests the electrical characteristic of electronic device (referring for example to patent document 1).In the spy
In needle platform, when testing the electrical characteristic of electronic device, in order to reappear the working environment (implementation of the electronic device
Environment), the temperature of cooling medium flow path and heater control chip in mounting table is utilized.
But, with the propulsion of high speed and fining, integrated level gets higher electronic device in recent years, calorific value when work
Substantially increase, it is thus possible to generate such problems, that is, when testing an electronic device on chip and carrier, to adjacent
Other electronic devices generate thermic load, cause other electronic devices to occur bad.In this case, it is therefore desirable to utilize cooling medium
The temperature of flow path and the electronic device in heater control test, inhibits the thermic load caused by other electronic devices.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 7-297242 bulletin
Summary of the invention
Invention technical problem to be solved
Then, cooling medium flow path and heater are not easy to minimize, and are difficult cooling medium flow path and heater part
Ground configures in mounting table.That is, the cooling medium flow path and heater in mounting table can integrally control the temperature of chip, but office
Portion, for example be only limitted to test in electronic device nearby control chip temperature be then impossible.For this purpose, not in test
Electronic device voltage when being applied to the higher work that should apply under working environment, to avoid to other adjacent electronic devices
Thermic load is generated, but such problems can occur for result, that is, can not find before electron device package electric when being applied with work
The problem of occurring when pressure, causes the yield rate of packaging body to reduce, and cost increases.
The purpose of the present invention is to provide one kind to be able to suppress the raised mounting table of cost and electronic device test set.
For solving the technical solution of technical problem
To achieve the goals above, the present invention provides a kind of mounting table comprising: for loading the cooler of inspected body
Structure；With the light irradiating means to be configured across the cooling body mode opposite with above-mentioned inspected body, above-mentioned cooling body by
Translucent material is constituted, and the internal cooling medium for light-permeable flows, and above-mentioned light irradiating means include sending out towards above-mentioned inspected body
Multiple LED of light.
To achieve the goals above, the present invention provides a kind of electronic device test set, is used for configuring or be formed in
Electronic device in inspected body is tested, and above-mentioned electronic device test set includes: for loading above-mentioned inspected body
Mounting table；With the contact terminal that can be in electrical contact with the above-mentioned electronic device of placed above-mentioned inspected body, above-mentioned mounting table
It include: the cooling body for loading inspected body；With to match across the cooling body mode opposite with above-mentioned inspected body
The light irradiating means set, above-mentioned cooling body are made of translucent material, and the internal cooling medium for light-permeable flows, above-mentioned illumination
Penetrating mechanism includes the multiple LED to shine towards above-mentioned inspected body.
Invention effect
Using the present invention, the light irradiating means including multiple LED are the cooling bodies for having cooling medium to flow across inside
With inspected body relative configuration, but, since cooling body is made of translucent material, and cooling medium is also light-permeable
, therefore the light from LED can reach inspected body through cooling body and cooling medium.Also, light irradiating means can
By each LED come locally to inspected body irradiation light.Thereby, it is possible to integrally cool down inspected body using cooling body, and
And to inspected body local irradiation light, therefore it can only heat the required electronic device in inspected body.That is, tested
It, can be while only controlling the temperature of required electronic device in physical examination, other cooling electronic devices are able to suppress and come from
The thermic load of required electronic device is applied on other electronic devices.As a result, it is possible to apply to required electronic device
Voltage when being added in the higher work that should apply under working environment, therefore the voltage when being applied with work can be found before packaging
When the problem of occurring, the yield rate for being able to suppress packaging body reduces, and prevents cost from increasing.
Detailed description of the invention
Fig. 1 is for roughly illustrating the electronic device test set of the first embodiment of the invention i.e. structure of probe station
Perspective view.
Fig. 2 is the main view for roughly illustrating the electronic device test set of the present embodiment i.e. structure of probe station
Figure.
Fig. 3 A is the side view of the structure of the carrier used when testing electronic device in the probe station for show diagrammatically in Fig. 1
Figure.
Fig. 3 B is the vertical view of the structure of the carrier used when testing electronic device in the probe station for show diagrammatically in Fig. 1
Figure.
Fig. 4 is the sectional view that outlined the superstructure of mounting table in Fig. 1.
Fig. 5 is the top view that outlined the structure of LED illumination unit in Fig. 4.
Fig. 6 is the figure that outlined the structure of thermometric circuit of each electronic device in present embodiment.
Fig. 7 A is the structure for showing diagrammatically in the chip used when testing electronic device in second embodiment of the invention
Side view.
Fig. 7 B is the structure for showing diagrammatically in the chip used when testing electronic device in second embodiment of the invention
Top view.
Fig. 8 is the sectional view for illustrating mounting situation of the wafer W in mounting table in present embodiment.
Fig. 9 is the figure that outlined the structure of thermometric circuit of each electronic device in present embodiment.
Figure 10 is the figure that outlined the structure of thermometric circuit of each electronic device in third embodiment of the invention.
Figure 11 is the observer indicated for measuring the temperature of electronic device according to the temperature of spring needle (pogo pin)
Structure figure.
Figure 12 is the oscillating circuit for illustrating accordingly to be formed in second embodiment of the invention with each electronic device
Enlarged plan view.
Figure 13 is the variation that outlined the thermometric circuit of each electronic device in second embodiment of the invention
The figure of structure.
Specific embodiment
Embodiments of the present invention will be described with reference to the accompanying drawings.
Illustrate first embodiment of the invention first.
Fig. 1 is for roughly illustrating the electronic device test set of the first embodiment of the invention i.e. structure of probe station
Perspective view, Fig. 2 is its main view.Fig. 2 outlined the built-in structural element that Part-redraw is sectional view.
In fig. 1 and 2, probe station 10 includes receiving room 12, loading machine 13 and test machine 14, is wherein received in receiving room 12
The mounting table 11 (stage) received for loading support C (inspected body), loading machine 13 are configured adjacently with the receiving room 12, are surveyed
Test-run a machine 14 is configured in a manner of covering receiving room 12, and multiple electronic devices of 10 pairs of the probe station configurations in support C carry out respectively
Electrical characteristics test.Receiving room 12 in it is internal be cavity hull shape, inside this other than configured with above-mentioned mounting table 11,
Probe card 15 is also configured in the mode opposite with the mounting table 11.Probe card 15 has and the electrode pad or pricker in support C
Multiple acicular probes 16 (contact terminal) of the corresponding configuration of bump point, wherein the electrode pad or soldering salient point are and each electronics
What the electrode of device was correspondingly arranged.
Support C is fixed in mounting table 11, so that the relative position of itself and the mounting table 11 does not shift.Mounting table
11 can move up with upper and lower in the horizontal direction, adjust the relative position of probe card 15 and support C, make each of probe card 15
The electrode pad or soldering salient point that the electrode of the contact of probe 16 and each electronic device is correspondingly arranged.Loading machine 13 holds from as carrying
The mounting table 11 taking out the support C configured with electronic device in the FOUP (not shown) of device and being placed on inside receiving room 12
On, or the support C after being tested is removed from mounting table 11 and is received into FOUP.
Probe card 15 is connect through interface 17 with test machine 14, on each 16 contact carrier C of probe with each electronic device
When electrode pad that electrode is correspondingly arranged or soldering salient point, each probe 16 from test machine 14 through interface 17 to electronics,
Or the signal from electronic device is transmitted to test machine 14 through interface 17.
Test machine 14 has test board (not shown), which is used to reappear the circuit of the mainboard of mountable electronic device
A part of structure, the signal of test board and basis from electronic device judges electronic device, and whether there is or not undesirable computers 18 to connect
It connects.In test machine 14, the circuit structure of a variety of mainboards can be reappeared by replacing test board.
Loading machine 13 includes base unit 19 and potential difference measurement unit 20 (measurement portion), and base unit 19 is to power supply etc.
The controller controlled, the potential difference generative circuit that potential difference measurement unit 20 is used to measure in each electronic device (are not schemed
Show), such as diode, transistor or ohmically potential difference.Potential difference measurement unit 20 is connect through wiring 21 with interface 17, is taken
The potential difference between 2 probes 16 touched on 2 electrode pads corresponding with each electrode of potential difference generative circuit is obtained, will be taken
The potential difference obtained is transferred to base unit 19.About the connection structure with each probe 16 and wiring 21 in interface 17, will use
Fig. 6 illustrates below.Base unit 19 is connect through wiring 22 with mounting table 11, controls the dynamic of aftermentioned LED illumination unit 30 etc.
Make.Base unit 19 and potential difference measurement unit 20 can be not arranged in receiving room 12, and potential difference measurement unit 20 can be set
It sets in probe card 15.
Probe station 10 further includes user interface part 23, and user interface part 23 is by display panel such as touch panel or keyboard etc.
It constitutes, user can input various information and instruction on user interface part 23.
When carrying out the electrical characteristics test of electronic device in probe station 10,18 pairs of test machine computer through each probe 16 with
The test board of electronic device connection sends data, and according to the electric signal from test board, judge transmitted data whether by
The test board is correctly handled.
Fig. 3 A and Fig. 3 B are the structures of the carrier used when testing electronic device in the probe station for show diagrammatically in Fig. 1
Figure, Fig. 3 A is side view, and Fig. 3 B is top view.
In Fig. 3 A and Fig. 3 B, support C is made of the glass substrate 24 of substantially circular plate type, (is drawn from semiconductor devices cutting
Cut) go out multiple electronic devices 25 each other across defined interval configuration on the surface of support C.It is and each also, in support C
The multiple electrodes of electronic device 25 are correspondingly provided with multiple electrodes pad 26, by applying voltage, energy to each electrode pad 26
Flow electric current in the internal circuit of each electronic device 25.The shape of the glass substrate 24 of support C is not limited to substantially plectane
Shape as long as can be positioned in mounting table 11, such as can be substantially rectangular.Also, support C can also be by glass substrate
Light transparent member other than 24 is constituted.
Fig. 4 is the sectional view that outlined the superstructure of mounting table in Fig. 1.
In Fig. 4, mounting table 11 includes being configured in order from top to bottom in disk-shaped mounting table lid 27, internal shape on top
At the cooling unit 29 (cooling body) and LED illumination unit 30 (light irradiating means) for having cooling medium slot.Mounting table lid 27 every
O-ring 31 be connected on cooling unit 29, cooling medium slot by mounting table lid 27 cover and form cooling medium flow path 28.O
Cooling medium is sealed in cooling medium flow path 28 by shape ring 31.
Colourless, light-permeable liquid is for example able to use as cooling medium --- water or Galden (registered trademark), by
The pump outside probe station 10 (not shown) is arranged in be supplied in cooling medium flow path 28.It is provided between pump and mounting table 11
Flow control valve etc. controls the flow for the cooling medium for being supplied to cooling medium flow path 28.Flow control valve etc. moves
Work is controlled by base unit 19.Mounting table lid 27 and cooling unit 29 are by translucent material such as polycarbonate, quartz, polychlorostyrene second
Alkene, acrylate or glass are constituted.
In mounting table 11, support C is positioned in the upper surface of mounting table lid 27, and LED illumination unit 30 is across mounting table
Lid 27 and cooling unit 29 are opposite with placed support C.LED illumination unit 30 includes multiple loads towards configuration in upper surface
Body C luminous LED32.Multiple LED32 are divided into multiple groups as described later.
Fig. 5 is the top view that outlined the structure of LED illumination unit in Fig. 4.
In Fig. 5, each LED32 is for example divided into the region 33 of 19 regular hexagons, and in each region 33, respectively
LED32 is for example divided into 6 LED group 33a~33f.That is, LED illumination unit 30 includes 114 LED group 33a~33f.Respectively
LED32 can to support C irradiation LED light, such as near infrared light, the irradiation of each LED32 and non-irradiated be by each LED group 33a~
33f is unit control.To which, LED illumination unit 30 being capable of any part irradiation LED light to the support C back side.It is saved in Fig. 5
The diagram for having omited each LED32 illustrates only the dividing line of each LED group 33a~33f.
Probe station 10 makes cooling medium be situated between cooling as needed when carrying out the electrical characteristics test of each electronic device 25
It is flowed in mass flow road 28, and from each LED group 33a~33f to support C irradiation LED light.For example, carrying out hot environment (about 85
DEG C) under use electronic device 25 electrical characteristics test when, from any of each LED group 33a~33f to required electricity
Sub- 25 irradiation LED light of device, and flow cooling medium in cooling medium flow path 28.At this point, LED light will be through cooling single
First 29, cooling medium, the glass substrate 24 of mounting table lid 27 and support C, due to cooling unit 29, cooling medium, mounting table lid
27 and support C the equal light-permeable of glass substrate 24, therefore LED light can hardly happen and damply reach required electronics device
Part 25, the only electronic device 25 of heating requirements, Lai Chongxian hot environment.On the other hand, adjacent with required electronic device 25
Other 25 cooled medium flow paths 28 of electronic device in the cooling medium that flows cooled down.Even if required electronics as a result,
The temperature of device 25 rises due to the application of voltage when the heating of LED light and work, the heat from required electronic device 25
Load will not be applied on other electronic devices 25.Especially, the pyroconductivity of the glass substrate 24 of support C is lower, because
This can be reliably suppressed the thermic load from required electronic device 25 and be applied on other electronic devices 25.
In addition, in the electrical characteristics test of the electronic device 25 used under carrying out room temperature environment (about 25 DEG C), from each LED
Any of group 33a~33f makes cooling medium in cooling medium stream to required 25 irradiation LED light of electronic device
It is flowed in road 28, but, makes the intensity for being pointed into the LED light of required electronic device 25, than what is used under progress hot environment
The intensity of LED light when the electrical characteristics test of electronic device 25 is weak.
In addition, making cooling medium cold in the electrical characteristics test of the electronic device 25 used under carrying out low temperature environment
But it is flowed in medium flow path 28, and not from LED illumination unit 30 to support C irradiation LED light.At this point, even if required electricity
The temperature of sub- device 25 when being applied with work voltage due to rise, also can immediately cooled medium it is cooling, and with it is required
Other adjacent electronic devices 25 of electronic device 25 continue the cooling medium flowed in cooled medium flow path 28 cooling, therefore its
He can absorb heat from required electronic device 25 by electronic device 25.Thereby, it is possible to by the temperature of required electronic device 25
Degree is maintained at low temperature.
When carrying out the electrical characteristics test of electronic device 25 in probe station 10, in order to accurately reappear working environment,
The temperature for being preferably able to measure required electronic device 25 in real time uses electricity in the present embodiment to cope with this point
Potential difference measuring unit 20 measures the temperature of required electronic device 25.
Fig. 6 is the thermometric circuit of each electronic device in the potential difference measurement unit for outlined present embodiment
The figure of structure.
In Fig. 6, each probe 16 passes through the multiple wirings 34 configured in interface 17 and connect with test machine 14, wherein 2
Probe touches 2 electrode pads corresponding with each electrode of potential difference generative circuit (such as diode) in electronic device 25
On 26, among each wiring 34, be respectively arranged on 2 wirings 34 for connecting above-mentioned 2 probes 16 with test machine 14 after
Electric appliance 35 (relay).Each relay 35 is configured to be transmitted to 14 He of test machine with switching the current potential of each electrode pad 26
Any one of potential difference measurement unit 20, for example, being welded when carrying out the electrical characteristics test of electronic device 25 to each electrode
At the time of regulation when disk 26 is applied with work after voltage, the current potential of each electrode pad 26 is transmitted to potential difference measurement unit
20.Here current potential known in diode, transistor and resistance equal potential difference generative circuit, that flowing generates when having rated current
Difference is different with temperature.Thus, it is possible in testing the potential difference of the potential difference generative circuit based on electronic device 25, i.e. with electricity
Potential difference between corresponding 2 electrode pads 26 (probe 16) of each electrode of potential difference generative circuit, to measure electronics in real time
The temperature of device 25.In probe station 10, potential difference measurement unit 20 based on from each relay 35 transmit come each electrode pad
26 current potential, obtains the potential difference of the potential difference generative circuit of electronic device 25, and then the potential difference of acquirement is transmitted to basis
Unit 19.The temperature characterisitic of the potential difference of potential difference and potential difference generative circuit that base unit 19 is come based on transmitting, measurement are electric
The temperature of sub- device 25.In turn, temperature of the base unit 19 based on the electronic device 25 measured adjusts in cooling medium flow path 28
The intensity of the LED light of each LED group 33a~33f irradiation, will test in the flow and LED illumination unit 30 of the cooling medium of flowing
In electronic device 25 temperature control be required value.
In probe station 10, the LED illumination unit 30 including multiple LED32 is across cooling unit 29 and mounting table lid 27
It is oppositely disposed with support C, but, since cooling unit 29 and mounting table lid 27 are made of translucent material, and cooling unit
The cooling medium flowed in 29 cooling medium flow path 28 is also light-permeable, therefore the LED light from each LED32 can penetrate
Cooling unit 29 and mounting table lid 27 reach support C.LED illumination unit 30 can be using each LED group 33a~33f come locally
To support C irradiation LED light.Thereby, it is possible to while using 29 entirety coolant carrier C of cooling unit, to support C local irradiation
LED light, therefore can only heat the electronic device 25 in test.That is, in support C, it can be in the electronics in only control test
While the temperature of device 25, other cooling electronic devices 25 are able to suppress the thermic load of the electronic device 25 come in self-test
It is applied on other electronic devices 25.Voltage when as a result, it is possible to apply work on required electronic device 25, therefore energy
Enough to find the problem of occurring when the voltage when being applied with work before packaging, the yield rate for being able to suppress packaging body reduces, and prevents
Only cost increases.
In above-mentioned probe station 10, support C is made of glass substrate 24, and the pyroconductivity of glass substrate 24 is lower.Thus,
The thermic load from required electronic device 25 can be more reliably inhibited to be applied on other electronic devices 25.
In above-mentioned probe station 10, mounting table lid 27, cooling unit 29 and cooling medium can make from each LED32's
LED light transmission, and glass substrate 24 can also be such that the LED light from each LED32 transmits, so can be improved from each
Heating effect of the LED light of LED32 to required electronic device 25.
Above-mentioned probe station 10 includes the potential difference for measuring the potential difference generative circuit of required electronic device 25
Potential difference measurement unit 20, so the temperature of the electronic device 25 in test can be measured in real time based on the potential difference measured,
Therefore the temperature for being able to use the electronic device 25 measured carries out feedback control, so as to high in the test of electronic device 25
Reappear working environment to precision.
In above-mentioned probe station 10, mounting table lid 27 and cooling unit 29 are by polycarbonate, quartz, polyvinyl chloride, third
Alkene acid ester resin or glass are constituted, these materials are easily worked and shape, therefore can reduce the manufacturing cost of probe station 10.
Then illustrate second embodiment of the present invention.
Second embodiment of the invention it is structurally and functionally essentially identical with above-mentioned first embodiment, only difference is that
Use the chip for being formed with multiple electronic devices instead of carrier, therefore the description thereof will be omitted for duplicate structurally and functionally, under
Text is illustrated for different structures, effect.
Fig. 7 A and Fig. 7 B are to show diagrammatically in the chip used when testing electronic device in second embodiment of the invention
Structure figure, Fig. 7 A is side view, and Fig. 7 B is top view.
In Fig. 7 A and Fig. 7 B, wafer W (inspected body) is made of the silicon chip 36 of substantially circular plate type, by the chip
Etching process and the wiring processing implemented on W, multiple electronic devices 37 are formed in the table of wafer W across defined interval each other
Face.On the wafer W, potential difference generative circuit 38, such as diode, transistor or electricity are formed on the side of each electronic device 37
Resistance.Each potential difference generative circuit 38 is formed simultaneously with each electronic device 37, so, have identical as the circuit of each electronic device 37
Quality.Also, multiple soldering salient points 39 on the wafer W, are correspondingly provided with the multiple electrodes of each electronic device 37, and
2 soldering salient points 40 are correspondingly provided with the electrode of each potential difference generative circuit 38, by applying to each soldering salient point 39,40
Voltage can be such that electric current flows in the internal circuit and potential difference generative circuit 38 of each electronic device 37.
Fig. 8 is the sectional view for illustrating mounting situation of the wafer W in mounting table in present embodiment.
Present embodiment be also similarly, probe station 10 when carrying out the electrical characteristics test of each electronic device 37, according to
It needs to flow cooling medium in cooling medium flow path 28, and from each LED group 33a~33f of LED illumination unit 30 to chip
W irradiation LED light.But, the silicon chip 36 of wafer W can not be such that LED light transmits, therefore in the present embodiment, it is difficult to utilize LED
The required electronic device 37 of light heating, but due to cooling unit 29, cooling medium and the equal light-permeable of mounting table lid 27, from
The LED light that LED illumination unit 30 irradiates, which can hardly happen, damply reaches wafer W.Thus, it is possible to efficient using LED light
Heat wafer W in ground.The cooling medium that wafer W flows in mounting table lid 27 and cooling medium flow path 28 is adjacent, moreover, cooling
Medium can be such that LED light transmits therefore will not be heated by LED light, and temperature will not rise.Thus, it is possible to efficiently using cooling medium
Cooling wafer W.That is, in the present embodiment, it, can be with higher sound when carrying out the electrical characteristics test of each electronic device 37
The temperature of answering property control wafer W.
Fig. 9 is the figure that outlined the structure of thermometric circuit of each electronic device in present embodiment.
In Fig. 9, pass through with each each probe 16 for contact of soldering salient point 39 configure multiple wirings 34 in interface 17 and
Test machine 14 connects, and connect in interface 17 with wiring 21 with each each probe 16 for contact of soldering salient point 40, the wiring 21 and
Potential difference measurement unit 20 connects.
When carrying out the electrical characteristics test of electronic device 37 in probe station 10, electricity when applying work to each soldering salient point 39
It presses and defined voltage is applied to each soldering salient point 40.At this point, potential difference generative circuit 38 is because being brazed what salient point 40 applied from each
Assigned voltage and generate potential difference, as described above, the potential difference is different with the temperature of potential difference generative circuit 38.Thus, energy
Enough potential differences based between each soldering salient point 40 corresponding with each electrode of potential difference generative circuit 38, measurement potential difference generate
The temperature of circuit 38.Also, since potential difference generative circuit 38 is formation adjacent with electronic device 37, potential difference is generated
The temperature of circuit 38 can substantially be regarded as the temperature of electronic device 37.That is, can based on it is each soldering salient point 40 between potential difference,
Measure the temperature of electronic device 37.
In probe station 10, potential difference measurement unit 20 obtains the potential difference of potential difference generative circuit 38 through each wiring 21,
And then the potential difference of acquirement is transmitted to base unit 19.The potential difference and potential difference that base unit 19 is come based on transmitting generate electric
The temperature characterisitic of the potential difference on road 38 measures the temperature of electronic device 37.In turn, base unit 19 uses the electronic device measured
37 temperature carries out feedback control, adjusts the flow and LED illumination unit 30 of the cooling medium flowed in cooling medium flow path 28
In each LED group 33a~33f irradiation LED light intensity, it is required that the temperature of the electronic device 37 in test, which is controlled,
Value.Thereby, it is possible to accurately reappear working environment in the test of electronic device 37.
In the present embodiment, the side of each electronic device 37 on the wafer W is formed with potential difference generative circuit 38, but
Also it can replace potential difference generative circuit 38, form the oscillating circuit 47 (Figure 12) that frequency of oscillation changes with temperature.As vibration
Circuit 47 is swung, such as is able to use the ring oscillator circuit being made of the odd number NOT gate (phase inverter) of chain connection.
In ring oscillator circuit, the output of most final stage NOT gate is input into first order NOT gate, and each NOT gate has
Defined delay time, thus from occurring input on first order NOT gate, after accumulative delay time, most final stage NOT gate
The logic NOT of the input on first order NOT gate is exported as a result, the logic NOT result is again inputted into first order NOT gate.Annular
The process is repeated in pierce circuit, generates the oscillation of assigned frequency.Also, the defined delay time of each NOT gate with
Temperature and change, therefore in result, the frequency of oscillation of ring oscillator circuit is changed with temperature.
Herein, the frequency of oscillation of oscillating circuit 47 is passed to the terminal 48 connecting with oscillating circuit 47.As shown in figure 13,
It is connected with frequency counter 50 through wiring 49 on terminal 48, frequency counter 50 measures the frequency of oscillation of oscillating circuit 47, will survey
Frequency Transfer to base unit 19.Base unit 19 is previously stored with the frequency of the oscillation of oscillating circuit 47 and the relationship of temperature
(frequency characteristic of oscillating circuit 47).Thus, it is possible to frequency of oscillation and oscillating circuit 47 based on the oscillating circuit 47 measured
Frequency characteristic measures the temperature of oscillating circuit 47.Also, in the same manner as potential difference generative circuit 38, oscillating circuit 47 be also with
The adjacent formation of electronic device 37, therefore the temperature of oscillating circuit 47 can substantially be regarded as the temperature of electronic device 37.That is, can
Based on the frequency that oscillating circuit 47 vibrates, the temperature of electronic device 37 is measured.Especially, ring oscillator circuit high reliablity,
It is cheap and can high speed motion can be rapidly and cheap therefore by using ring oscillator circuit as oscillating circuit 47
Realize the temperature measurement of the high reliability of electronic device 37 in ground.
Then illustrate third embodiment of the present invention.
Third embodiment of the invention structurally and functionally with above-mentioned first embodiment and the basic phase of second embodiment
Together, it the difference is that only the thermometry of electronic device 25, therefore the description thereof will be omitted for duplicate structurally and functionally,
It is illustrated below for different structures, effect.
In this second embodiment, the potential difference generative circuit 38 for being formed in each 37 side of electronic device is applied defined
Voltage measures the temperature of electronic device 37, but potential difference generative circuit 38 is fine circuit, therefore may apply because of voltage
And it is damaged.However, a part of potential difference generative circuit 38 sometimes also as electronic device 37 plays a role, therefore best
Potential difference generative circuit 38 can be reduced in the chance being damaged before electronic device 37 encapsulates because voltage applies.Also, it also deposits
The case where the electronic device 25 of no image of Buddha first embodiment forms potential difference generative circuit like that in electronic device.To answer
To this point, present embodiment measures the temperature of electronic device under the premise of not using potential difference generative circuit.
Figure 10 is the figure that outlined the structure of thermometric circuit of each electronic device in present embodiment.
In Figure 10, interface 17 include test machine 14 is connect with each probe 16, the shape by multiple bar-like member boundlings
At spring needle 41 (conducting-heat elements), temperature sensor 42 is installed on the spring needle 41.Temperature sensor 42 passes through wiring 43
It is connect with base unit 44, base unit 44 measures the temperature of spring needle 41.Here, the electricity when applying work to electronic device 25
When pressure carries out electrical characteristics test, the heat of electronic device 25 is transmitted on spring needle 41 from each probe 16.Thus, electronic device
There are certain relationships for 25 temperature and the temperature of spring needle 41.Therefore, as shown in Figure 11, electronic device 25 is indicated
The heat of LED light to be irradiated with LED illumination unit 30 be input u (t), with the temperature of spring needle 41 be output y (t) dynamic
System 45 constructs Controlling model --- the state observer 46 for measuring the temperature of electronic device 25 in base unit 44
(observer), the temperature of internal state, that is, electronic device 25 of dynamical system 45 is thus calculated.System square in observer 46
Battle array A, b, c, h is determined for example, by using such mode, that is, in support C installation have the thermal capacitance similar with electronic device 25 and
The chip of thermal resistance determines above system matrix by measuring the temperature of installed chip.
In the present embodiment, using observer 46, it is capable of the temperature of the heat based on LED light and spring needle 41 in testing
Degree measures the temperature of electronic device 25 in real time.Temperature of the base unit 44 based on the electronic device 25 measured, adjustment z are cooling
The LED light of each LED group 33a~33f irradiation in the flow and LED illumination unit 30 of the cooling medium flowed in medium flow path 28
Intensity controls the temperature of the electronic device 25 in test for required value.Thereby, it is possible in the test of electronic device 25
Accurately reappear working environment.Also, it does not need to measure the temperature of electronic device 25 and use is formed in electronic device
The potential difference generative circuit 38 on 25 sides, so can prevent potential difference generative circuit 38 from damaging before electronic device 25 encapsulates
It is bad, therefore can prevent the yield rate of packaging body from reducing.
In addition, in the present embodiment, temperature sensor 42 is mounted on spring needle 41, but the temperature can also be passed
Sensor 42 is mounted on the probe 16 or wiring (conducting-heat elements) that can receive the transmitting of the heat from electronic device 25.In this case
And can be constructed in base unit 44 with the heat of LED light be input u (t), with the temperature of probe 16 or wiring be export
The observer of y (t), the temperature of heat and probe 16 or wiring using the observer based on LED light, measurement electronic device 25
Temperature.
It is illustrated above in relation to the present invention using the respective embodiments described above, but the present invention is not limited to above-mentioned each embodiment party
Formula.
For example, mounting table lid 27 is made of translucent material, but also can be used other than translucent material in mounting table 11
, the composite material of ceramics or the metal and ceramics such as metals, the SiC such as the material that pyroconductivity is high, such as Al, Cu, carried to constitute
Set platform lid 27.At this point, mounting table lid 27 can not be such that LED light transmits, but since the LED light that LED illumination unit 30 irradiates can penetrate
Cooling unit 29 and cooling medium, so LED light can hardly happen damply arrival mounting table lid 27.Thus, it is possible to sharp
Mounting table lid 27 is efficiently heated with LED light, therefore also can efficiently heat the wafer W being positioned on mounting table lid 27.This
Outside, in the case where mounting table lid 27 is made of quartz, quartzy rigidity is simultaneously not high enough therefore may generate rupture, but passes through
Mounting table lid 27 is constituted using metal, can be improved the rigidity of mounting table lid 27, therefore can prevent from sending out on mounting table lid 27
Raw rupture etc..Especially, in order to ensure high rigidity, the material requirements Young's modulus of mounting table lid 27 is high and thermal conductivity height as
Therefore physical property is suitable for composite material (such as THERMADITE (registered trademark) 100-60 (II-VI using Cu, SiC and diamond
M Cubed Technologies Inc. production)), thus, it is possible to realize relatively thin and high thermal conductivity mounting table lid 27.
In addition, can be made by the flow for adjusting the cooling medium being supplied in the cooling medium flow path 28 of mounting table 11
The control range of the temperature of electronic device 25,37 changes to high temperature side or low temperature side.For example, in electronic device 25,37 to be made
In the case that the control range of temperature changes to high temperature side, reduce the stream for the cooling medium being supplied in cooling medium flow path 28
Amount.In the case where the control range of the temperature of electronic device 25,37 to be made changes to low temperature side, increase is supplied to cooling medium
The flow of cooling medium in flow path 28.In addition, by keeping the face by 28 side of cooling medium flow path of mounting table lid 27 (cooling
Media contact face) shape be the fin shape configured with multiple fins, or by adjust mounting table lid 27 cooling medium connect
The surface roughness of contacting surface can adjust the heat output between electronic device 25,37 and cooling medium.Therefore, it is loaded by changing
The shape of the cooling medium contact surface of platform lid 27 can also change the control range of the temperature of electronic device 25,37.
In the respective embodiments described above, the spy to each electronic device 25 (37) is tested by every wafer W or support C is illustrated
The mounting table 11 of needle platform 10 applies situation of the invention, but the present invention can also apply to including multiple test cabinets (cell)
The mounting table in each test cabinet is configured in multichamber type electronic device test set together with probe card.
The application is submitted with the Japanese publication submitted on November 29th, 2016 the 2016-231844th, on March 21st, 2017
Japanese publication the 2017-54366th and wanted based on July 11st, 2017 Japanese publication submitted the 2017-135401st
Priority is sought, the full content recorded in these Japanese publication is cited in the application.
Description of symbols
C carrier
W chip
10 probe stations
11 mounting tables
15 probe cards
16 probes
20 potential difference measurement units
24 glass substrates
25,37 electronic device
26 electrode pads
27 mounting table lids
28 cooling medium flow paths
29 cooling units
30 LED illumination units
32 LED
33a~33f LED group
35 relays
36 silicon chips
38 potential difference generative circuits
39,40 soldering salient point
47 oscillating circuits
50 frequency counters.
Claims (13)
1. a kind of mounting table characterized by comprising
For loading the cooling body of inspected body；With
With the light irradiating means configured across the cooling body mode opposite with the inspected body,
The cooling body is made of translucent material, and the internal cooling medium for light-permeable flows,
The light irradiating means include the multiple LED to shine towards the inspected body.
2. mounting table as described in claim 1, it is characterised in that:
The inspected body is made of the glass substrate configured with multiple electronic devices.
3. mounting table as described in claim 1, it is characterised in that:
The inspected body is made of the semiconductor wafer for being formed with multiple electronic devices.
4. such as described in any item mounting tables of claims 1 to 3, it is characterised in that:
The translucent material is made of polycarbonate, quartz, polyvinyl chloride, acrylate or glass.
5. mounting table as described in any one of claims 1 to 4, it is characterised in that:
Each LED illumination near infrared light.
6. a kind of electronic device test set is used to check the electronic device for configuring or being formed in inspected body,
The electronic device test set is characterised by comprising:
For loading the mounting table of the inspected body；With
The contact terminal that can be in electrical contact with the electronic device of placed inspected body,
The mounting table includes:
For loading the cooling body of inspected body；With
With the light irradiating means configured across the cooling body mode opposite with the inspected body,
The cooling body is made of translucent material, and the internal cooling medium for light-permeable flows,
The light irradiating means include the multiple LED to shine towards the inspected body.
7. electronic device test set as claimed in claim 6, it is characterised in that:
The inspected body is made of the glass substrate configured with multiple electronic devices,
The electronic device test set further includes measurement portion, and the measurement portion is used to measure the current potential bad student of the electronic device
At the potential difference of circuit.
8. electronic device test set as claimed in claim 6, it is characterised in that:
The inspected body is made of the semiconductor wafer for being formed with multiple electronic devices, in the side shape of each electronic device
At there is potential difference generative circuit,
The electronic device test set further includes the measurement portion for measuring the potential difference of the potential difference generative circuit.
9. electronic device test set as claimed in claim 7 or 8, it is characterised in that:
The potential difference generative circuit includes diode, transistor or resistance.
10. electronic device test set as claimed in claim 6, it is characterised in that:
It further include temperature sensor, measurement can receive the temperature of the conducting-heat elements of the heat transmitting from the electronic device,
The temperature of the electronic device is calculated based on the temperature measured by the temperature sensor.
11. electronic device test set as claimed in claim 10, it is characterised in that:
It is built with observer, is used to calculate with the heat of the light irradiated from the light irradiating means for input, by the temperature
The temperature that degree sensor measures is the internal state of the dynamical system of output,
Using the observer, temperature of the internal state of the dynamical system as the electronic device is calculated.
12. electronic device test set as claimed in claim 6, it is characterised in that:
The inspected body is made of the semiconductor wafer for being formed with multiple electronic devices, in the side shape of each electronic device
At there is oscillating circuit,
The electronic device test set further includes the measurement portion for measuring the frequency of the oscillating circuit oscillation.
13. electronic device test set as claimed in claim 12, it is characterised in that:
The oscillating circuit is made of ring oscillator.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-231844 | 2016-11-29 | ||
| JP2016231844 | 2016-11-29 | ||
| JP2017054366 | 2017-03-21 | ||
| JP2017-054366 | 2017-03-21 | ||
| JP2017135401A JP6994313B2 (en) | 2016-11-29 | 2017-07-11 | Mounting table and electronic device inspection equipment |
| JP2017-135401 | 2017-07-11 | ||
| PCT/JP2017/036400 WO2018100881A1 (en) | 2016-11-29 | 2017-09-29 | Placement stand and electronic device inspecting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109983350A true CN109983350A (en) | 2019-07-05 |
| CN109983350B CN109983350B (en) | 2022-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780072416.6A Active CN109983350B (en) | 2016-11-29 | 2017-09-29 | Mounting table and electronic device testing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109983350B (en) |
| WO (1) | WO2018100881A1 (en) |
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| CN110931390A (en) * | 2018-09-20 | 2020-03-27 | 东京毅力科创株式会社 | Inspection apparatus and inspection method |
| CN112838041A (en) * | 2019-11-25 | 2021-05-25 | 东京毅力科创株式会社 | Mounting table and inspection apparatus |
| CN113406471A (en) * | 2020-03-17 | 2021-09-17 | 东京毅力科创株式会社 | Mounting table, inspection apparatus, and method for suppressing warpage of mounting table |
| CN114096933A (en) * | 2019-07-19 | 2022-02-25 | 东京毅力科创株式会社 | Temperature control device, temperature control method, and inspection device |
| JP7353150B2 (en) | 2019-11-27 | 2023-09-29 | 東京エレクトロン株式会社 | Mounting table and inspection device |
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| JP7262249B2 (en) * | 2019-03-05 | 2023-04-21 | 東京エレクトロン株式会社 | SUBSTRATE HOLDER, INSPECTION APPARATUS, AND INSPECTION METHOD |
| JP7336256B2 (en) * | 2019-05-10 | 2023-08-31 | 東京エレクトロン株式会社 | Mounting table and manufacturing method of mounting table |
| JP7365923B2 (en) * | 2020-02-12 | 2023-10-20 | 東京エレクトロン株式会社 | Temperature control device, temperature control method, and inspection device |
| TW202237395A (en) | 2021-01-20 | 2022-10-01 | 日商Ａｇｃ股份有限公司 | Multilayer member |
| JP2022154237A (en) * | 2021-03-30 | 2022-10-13 | 東京エレクトロン株式会社 | LED chuck |
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| Publication number | Publication date |
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| CN109983350B (en) | 2022-02-22 |
| WO2018100881A1 (en) | 2018-06-07 |
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