CN109979804A - 一种提高单晶硅片洁净度的清洗工艺 - Google Patents
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- 238000004140 cleaning Methods 0.000 title claims abstract description 35
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- 230000003749 cleanliness Effects 0.000 title claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 67
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- 235000008216 herbs Nutrition 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 235000005979 Citrus limon Nutrition 0.000 description 2
- 244000131522 Citrus pyriformis Species 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
- 206010044565 Tremor Diseases 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
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Abstract
本发明涉及硅片清洗领域。一种提高单晶硅片洁净度的清洗工艺,第一清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;第二清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;第三清洗槽中装有5000±50毫升的BST、140升水,在45±5摄氏度温度下清洗180秒;第四清洗槽中装有9500±50克的氢氧化钠、72±20克的双氧水、140升水,在45±5摄氏度温度下清洗180秒。
Description
技术领域
本发明涉及硅片清洗领域。
背景技术
随着光伏技术的发展,对硅片表面的洁净度及表面态的要求也越来越高,残留物将最终影响电池片整体转换效率,对此问题,目前行业内在硅片切割结束后,需对硅片进行预清洗,主要去除硅片表面沾污,表面脏污是指沉积在硅片表面的粒子、金属、有机物和自然氧化膜的一种或几种。因为有机物会遮盖部分硅片表面,使氧化层和与之相关的沾污难以去除,清洗的一般思路是首先去除表面的有机沾污,然后溶解氧化层(因为氧化层是'沾污陷阱',也会引入外延缺陷),最后再去除颗粒、金属沾污,若此类杂质残留于硅片表面,会影响P-N结的性能,引起P-N结击穿而导致漏电的产生,杂质同时会影响硅片电阻率的不稳定。目前硅片清洗工艺主要使用超声波清洗工艺+弱碱清洗剂清洗硅片。声能在液体内传播时,液体会沿声传播的方向运动,形成声学流。声学流是由声波产生的力和液体的声学阻力以及其它的气泡阻力形成的液体的流动的结果。声波清洗就是利用声能产生的液体流动来去除硅片表面的脏污。添加清洗剂主要使用提高硅片表面活性度,增加脏污去除力度,在后工序生产过程中,发现制绒面易存在残留,残留物主要是细小硅粉残留,导致制绒面反应不均。
发明内容
本发明所要解决的技术问题是:如何提高清洗能力,去除硅片表面有无和金属杂质、细微硅粉,便于后道工序硅片制绒面的形成。
本发明所采用的技术方案是:一种提高单晶硅片洁净度的清洗工艺,按照如下步骤进行
步骤一、在第一清洗槽中进行清洗,第一清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤二、在第二清洗槽中进行清洗,第二清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤三、在第三清洗槽中进行清洗,第三清洗槽中装有5000±50毫升的BST、140升水,在45±5摄氏度温度下清洗180秒;
步骤四、在第四清洗槽中进行清洗,第四清洗槽中装有9500±50克的氢氧化钠、72±20克的双氧水、140升水,在45±5摄氏度温度下清洗180秒;
步骤五、在第五清洗槽中进行清洗,第五清洗槽中装有2500±50柠檬酸、140升水,在30±5摄氏度温度下清洗180秒;
步骤六、在第六清洗槽中进行清洗,第六清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤七、在第七清洗槽中进行清洗,第七清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤八、在第八清洗槽中进行清洗,第八清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤九、在第九清洗槽中进行清洗,第九清洗槽中装有140升的水,在85±5摄氏度温度下清洗180秒;
步骤十、在90±5摄氏度温度下烘干。
在第1-9清洗槽中进行清洗时,每次清洗尺寸为156.5m*156.5m的硅片225片,每隔40次,第一清洗槽中中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第二清洗槽中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第三清洗槽中添加1500±50毫升与初始浓度相同的BST溶液,第四清洗槽中添加3500±50毫升与初始浓度相同的氢氧化钠和双氧水混合溶液,第五清洗槽中添加2500±50毫升与初始浓度相同的柠檬酸溶液;清洗过程中,始终保持第六到第九槽中的水为140升,多于140升则排除,少于140升则添加,当清洗240次后,第六到第九槽中的水全部排除后更换新水。
本发明的有益效果是:本发明在现有清洗工艺基础上,添加NaOH和双氧水,去除硅片表面杂质,最后用通过柠檬酸去除弱氧化物,药剂硅片表面碱残留,提高了硅片清洁度。
具体实施方式
添加NaOH:Si+2NaOH+H2O=Na2SiO3+2H2;OH-离子和金属离子可生成沉淀,金属离子主要是由Fe3+组成,氢氧根可有效去除金属离子;
添加H2O2:硅片切割过程中,在高温条件下,硅粉容易氧化,形成氧化物滞留在硅片表面,通过强氧化性双氧水,氧化硅片表面氧化物,便于后续工序酸制绒的形成;
柠檬酸:通过弱酸去除弱氧化物,药剂硅片表面碱残留。
一种提高单晶硅片洁净度的清洗工艺,
步骤一、在第一清洗槽中进行清洗,第一清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤二、在第二清洗槽中进行清洗,第二清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤三、在第三清洗槽中进行清洗,第三清洗槽中装有5000±50毫升的BST、140升水,在45±5摄氏度温度下清洗180秒;
步骤四、在第四清洗槽中进行清洗,第四清洗槽中装有9500±50克的氢氧化钠、72±20克的双氧水、140升水,在45±5摄氏度温度下清洗180秒;
步骤五、在第五清洗槽中进行清洗,第五清洗槽中装有2500±50柠檬酸、140升水,在30±5摄氏度温度下清洗180秒;
步骤六、在第六清洗槽中进行清洗,第六清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤七、在第七清洗槽中进行清洗,第七清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤八、在第八清洗槽中进行清洗,第八清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤九、在第九清洗槽中进行清洗,第九清洗槽中装有140升的水,在85±5摄氏度温度下清洗180秒;
步骤十、在90±5摄氏度温度下烘干。
在第1-9清洗槽中进行清洗时,每次清洗尺寸为156.5m*156.5m的硅片225片,每隔40次,第一清洗槽中中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第二清洗槽中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第三清洗槽中添加1500±50毫升与初始浓度相同的BST溶液,第四清洗槽中添加3500±50毫升与初始浓度相同的氢氧化钠和双氧水混合溶液,第五清洗槽中添加2500±50毫升与初始浓度相同的柠檬酸溶液;清洗过程中,始终保持第六到第九槽中的水为140升,多于140升则排除,少于140升则添加,当清洗240次后,第六到第九槽中的水全部排除后更换新水。
Claims (2)
1.一种提高单晶硅片洁净度的清洗工艺,其特征在于:按照如下步骤进行
步骤一、在第一清洗槽中进行清洗,第一清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤二、在第二清洗槽中进行清洗,第二清洗槽中装有5000±50毫升的BST、500±20克的氢氧化钠、140升水,在45±5摄氏度温度下清洗180秒;
步骤三、在第三清洗槽中进行清洗,第三清洗槽中装有5000±50毫升的BST、140升水,在45±5摄氏度温度下清洗180秒;
步骤四、在第四清洗槽中进行清洗,第四清洗槽中装有9500±50克的氢氧化钠、72±20克的双氧水、140升水,在45±5摄氏度温度下清洗180秒;
步骤五、在第五清洗槽中进行清洗,第五清洗槽中装有2500±50柠檬酸、140升水,在30±5摄氏度温度下清洗180秒;
步骤六、在第六清洗槽中进行清洗,第六清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤七、在第七清洗槽中进行清洗,第七清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤八、在第八清洗槽中进行清洗,第八清洗槽中装有140升的水,在50±20摄氏度温度下清洗180秒;
步骤九、在第九清洗槽中进行清洗,第九清洗槽中装有140升的水,在85±5摄氏度温度下清洗180秒;
步骤十、在90±5摄氏度温度下烘干。
2.根据权利要求1所述的一种提高单晶硅片洁净度的清洗工艺,其特征在于:在第1-9清洗槽中进行清洗时,每次清洗尺寸为156.5m*156.5m的硅片225片,每隔40次,第一清洗槽中中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第二清洗槽中添加1500±50毫升与初始浓度相同的BST+氢氧化钠混合溶液,第三清洗槽中添加1500±50毫升与初始浓度相同的BST溶液,第四清洗槽中添加3500±50毫升与初始浓度相同的氢氧化钠和双氧水混合溶液,第五清洗槽中添加2500±50毫升与初始浓度相同的柠檬酸溶液;清洗过程中,始终保持第六到第九槽中的水为140升,多于140升则排除,少于140升则添加,当清洗240次后,第六到第九槽中的水全部排除后更换新水。
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