CN109979492A - Magnetic recording media, sputtering target, the manufacturing method of sputtering target and magnetic memory apparatus - Google Patents
Magnetic recording media, sputtering target, the manufacturing method of sputtering target and magnetic memory apparatus Download PDFInfo
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- CN109979492A CN109979492A CN201811365060.8A CN201811365060A CN109979492A CN 109979492 A CN109979492 A CN 109979492A CN 201811365060 A CN201811365060 A CN 201811365060A CN 109979492 A CN109979492 A CN 109979492A
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- Prior art keywords
- recording media
- magnetic recording
- magnetic
- sputtering target
- skeleton
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- 238000005477 sputtering target Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 34
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 claims abstract description 23
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000006249 magnetic particle Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 229920000877 Melamine resin Polymers 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 16
- 229910005335 FePt Inorganic materials 0.000 claims description 15
- 239000004640 Melamine resin Substances 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910018979 CoPt Inorganic materials 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 4
- 210000000988 bone and bone Anatomy 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 230000005389 magnetism Effects 0.000 claims description 2
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 229910052799 carbon Inorganic materials 0.000 description 12
- -1 Nitrogen organic compound Chemical class 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 239000004698 Polyethylene Substances 0.000 description 7
- 229920000573 polyethylene Polymers 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920001684 low density polyethylene Polymers 0.000 description 6
- 239000004702 low-density polyethylene Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008929 regeneration Effects 0.000 description 6
- 238000011069 regeneration method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009689 gas atomisation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- CTRPRMNBTVRDFH-UHFFFAOYSA-N 2-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound CNC1=NC(N)=NC(N)=N1 CTRPRMNBTVRDFH-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- 229920003270 Cymel® Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- XVEUJTIZHZIHJM-UHFFFAOYSA-N a828782 Chemical compound CCOC(N)=O.CCOC(N)=O XVEUJTIZHZIHJM-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NAJVEIWPHZBYRE-UHFFFAOYSA-N n-(4,6-diamino-1,3,5-triazin-2-yl)-n-methylhydroxylamine Chemical compound CN(O)C1=NC(N)=NC(N)=N1 NAJVEIWPHZBYRE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/716—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by two or more magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/72—Protective coatings, e.g. anti-static or antifriction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/20—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
- C08L61/26—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
- C08L61/28—Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds with melamine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of higher magnetic recording media of SNR is provided.Magnetic recording media 100 is successively orientated with substrate 1, basal layer 2 and with (001) and has L10The magnetosphere 3 of structure.Magnetosphere 3 has granular texture, and there is the organic compound with methylene skeleton or methine skeleton in the crystal boundary portion of magnetic-particle.
Description
Technical field
The present invention relates to a kind of magnetic recording media, sputtering target, the manufacturing method of sputtering target and magnetic memory apparatus.
Background technique
In recent years, the demand of the high capacity of hard disk drive (HDD) was increasingly enhanced.Therefore, it is proposed to heat auxiliary
Return to zero (TAMR:Thermally-Assisted Magnetic Recording), using equipped with laser light source
Magnetic head is heated and is recorded to magnetic recording media.
In heat-assisted magnetic recording mode, by heating to magnetic recording media, coercivity can be greatly reduced.Cause
The higher magnetic material of crystal magnetic anisotropy constant Ku, can be used for the magnetosphere of magnetic recording media by this.Thereby, it is possible to
It maintains to make magnetic material be made fine while thermal stability, and can be realized about 1Tbit/inch2Packing density.?
This proposes L1 as the higher magnetic material of Ku0Type FePt alloy, L10Type CoPt alloy, L11Type CoPt alloy etc. is orderly
Alloy.
Additionally, it is known that adding to divide the crystal grain being made of above-mentioned ordered alloy as the material for being used to form Grain-Boundary Phase
The SiO of material2Equal oxides, C etc., so that being formed has granular texture (granular structure) magnetosphere.Thereby, it is possible to
The spin-exchange-coupled between magnetic-particle is reduced, and can be improved signal-to-noise ratio (SNR).
For example, describing the SiO of the addition 38% in FePt in non-patent literature 12。
In addition, describing in non-patent literature 2 with L10Structure and as the higher film of coercivity have it is granular
(FePt) Ag-C of structure.
[existing technical literature]
[non-patent literature]
Non-patent literature 1:Journal of Applied Physics 104,023904 (2008)
Non-patent literature 2:Journal of Magnetism and Magnetic Materials 322 (2010)
2658-2664
Summary of the invention
[problem to be solved by this invention]
In heat-assisted magnetic recording mode, by carrying out local heating to magnetosphere using laser etc., to make to be heated
Partial coercivity reduces.In this case, in principle, as long as only being heated to record position (recording bit),
It can be realized the purpose of heat-assisted magnetic recording mode.
However, in actual magnetic recording media, heat also can record position it is adjacent it is magnetospheric it is horizontal diffuse up, with
The adjacent position in record position can be also heated.In addition, since in magnetospheric lower section, there are basal layer, substrate etc., heats
It can be diffused up downwards magnetospheric.In particular, if heat it is magnetospheric it is horizontal diffuse up, on in-plane
Magnetization transition region can expand, thus be easy to happen side demagnetization (side-erase), and the SNR of magnetic recording media can drop
It is low.
In view of the above problems, the purpose of the present invention is to provide a kind of higher magnetic recording medias of SNR.
[solution to the problem]
(1) a kind of magnetic recording media is successively orientated with substrate, basal layer and with (001) and has L10Structure
Magnetosphere, the magnetosphere has granular texture, and exists in the crystal boundary portion of magnetic-particle with methylene skeleton or secondary
The organic compound of methyl skeleton.
(2) magnetic recording media according to (1), wherein the organic compound is organic compounds containing nitrogen.
(3) magnetic recording media according to (2), wherein the organic compounds containing nitrogen is polyimides, melamine
Resin or compound with amido bond or urethane bond.
(4) magnetic recording media according to any one of (1) to (3), wherein described magnetospheric with methylene bone
The content of the organic compound of frame or methine skeleton is 0.5 volume % or more, 40 volume % or less.
(5) magnetic recording media according to any one of (1) to (3), wherein the methylene skeleton includes by chemistry
Formula
[changing 1]
The two kinds of skeletons indicated, the methine skeleton includes by chemical formula
[changing 2]
The two kinds of skeletons indicated.
(6) magnetic recording media according to any one of (1) to (3), wherein it is described it is magnetospheric with a thickness of 1nm with
Upper 7nm or less.
(7) magnetic recording media according to any one of (1) to (3), wherein the magnetic-particle includes FePt alloy
Or CoPt alloy.
(8) a kind of magnetic memory apparatus, including the magnetic recording media according to any one of (1) to (7).
(9) one kind is used to form magnetospheric sputtering target, comprising: organic compounds containing nitrogen and magnetic material, it is described to contain
Nitrogen organic compound is polyimides, melamine resin or the compound with amido bond or urethane bond, and described nitrogenous have
The content of machine compound is 0.5 volume % or more, 40 volume % or less.
(10) a kind of manufacturing method for being used to form magnetospheric sputtering target, comprising: to including organic compounds containing nitrogen
The step of constituent of presoma and Magnaglo is sintered, the organic compounds containing nitrogen are polyimides, melamine
Polyimide resin or compound with amido bond or urethane bond.
[The effect of invention]
In accordance with the invention it is possible to provide a kind of higher magnetic recording media of SNR.
Detailed description of the invention
Fig. 1 is the exemplary diagrammatic cross-section for indicating the magnetic recording media in present embodiment.
Fig. 2 is the exemplary schematic diagram for indicating the magnetic memory apparatus in present embodiment.
Fig. 3 is the exemplary schematic diagram for indicating the magnetic head of Fig. 2.
Specific embodiment
Hereinafter, embodiments of the present invention will be described.The present invention is not limited to following implementation, are not departing from this hair
In the case where bright range, various modifications and substitutions can be carried out to following implementation.
[magnetic recording media]
Fig. 1 shows the example of the magnetic recording media in present embodiment.
It is sequentially formed with substrate 1, basal layer 2 in magnetic recording media 100, is orientated with (001) and there is L10The magnetic of structure
Property layer 3 and the protective layer 4 comprising diamond-like-carbon (DLC:Diamond-Like Carbon).At this point, magnetosphere 3 has grain
Shape structure, and there is the organic compound with methylene skeleton or methine skeleton in the crystal boundary portion of magnetic-particle.
Magnetosphere 3 is due to can be improved the intergranular thermal insulation of adjacent magnetic with above structure.Therefore, when from
When magnetic head irradiates laser, since heat is difficult to spread in the transverse direction of magnetosphere 3, therefore, it is difficult to side demagnetization, and SNR occurs
It is improved.
In embodiments of the present invention, methylene skeleton refers to by chemical formula
[changing 1]
The two kinds of skeletons indicated.In addition, methine skeleton refers to by chemical formula
[changing 2]
The two kinds of skeletons indicated.
It as the organic compound with methylene skeleton or methine skeleton, is not particularly limited, polyamides Asia can be enumerated
Amine, melamine resin, polyethylene etc..
As the specific example of polyethylene, high density polyethylene (HDPE), medium density polyethylene, low density polyethylene (LDPE) can be enumerated
Deng two or more polyethylene can be applied in combination.
It the reason of as by making magnetosphere 3 that there is above structure to improve adjacent magnetic intergranular thermal insulation, examines
Consider as follows.
In the previous magnetosphere with granular texture, in the crystal boundary portion of magnetic-particle, there are carbon, carbide, oxidations
The inorganic compounds such as object, nitride.Here, such as carbon (graphite), SiO2Thermal conductivity be respectively 1700W/ (mK), 1.4W/
(mK), in contrast, such as polyimides, melamine resin, low density polyethylene (LDPE) thermal conductivity are respectively about 0.16W/
(mK), about 0.04W/ (mK), 0.33W/ (mK).In other words, compared with inorganic compound, there is methylene skeleton or methine
The thermal conductivity of the organic compound of skeleton is extremely low.It is therefore contemplated that heat is difficult in magnetosphere 3 in magnetic recording media 100
It is horizontal to diffuse up, namely be difficult to spread between adjacent magnetic-particle.
For the organic compound with methylene skeleton or methine skeleton, preferably thermal conductivity is lower, specifically, excellent
It is selected as SiO2Thermal conductivity less than half, namely preferably 0.7W/ (mK) is below.
From fusing point from the point of view of the higher viewpoint of higher and hardness, the organic compound with methylene skeleton or methine skeleton
Preferably organic compounds containing nitrogen is further preferred that polyimides, melamine resin or has amido bond or urethane bond
Compound.
It as polyimides, is not particularly limited, pyromellitic acid anhydride, 3,3', 4,4'- biphenyltetracarboxyacid acids can be enumerated
Dianhydride, 3,3', 4,4'- benzophenone tetracarboxylic dianhydride, 3,3', tetracarboxylic dianhydrides and the 1,4- such as 4,4'- diphenyl ether tetracarboxylic dianhydride
The condensation polymer of the diamines such as phenylenediamine, 4,4'- diaminodiphenyl ether, 4,4'- diamines biphenyl, it is two or more can be applied in combination its.
It as melamine resin, is not particularly limited, the condensation polymer of melamine and formaldehyde can be enumerated, by hydroxyl first
2- substituted melamine and the condensation polymer of formaldehyde etc. replaced the substituent groups such as base, alkyl, phenyl can be applied in combination its two kinds
More than.
It as the compound with amido bond, is not particularly limited, polyamide such as nylon 6, nylon66 fiber etc. can be enumerated, it can
It is two or more its is applied in combination.
It as the compound with urethane (urethane) key, is not particularly limited, can enumerate as aromatic polyvalent
It is two or more that its can be applied in combination in the urethane resin of alcohol or aliphatic polyol and the condensation polymer of polyisocyanate.
Magnetosphere 3 can use sputtering method and be formed.
In the sputtering target for being used to form magnetosphere 3, the organic compound with methylene skeleton or methine skeleton
Content is 0.5 volume % or more, 40 volume % or less.
When forming magnetosphere 3, rise to lower the temperature of sputtering target, preferably by RF sputtering method.Thereby, it is possible to press down
Fixture has the decomposition of the organic compound of methylene skeleton or methine skeleton.Furthermore it is also possible to be splashed using electric conductivity is lower
It shoots at the target.
It should be noted that the organic compound included in magnetosphere 3 with methylene skeleton or methine skeleton
It can be with decomposed.
It, can be by including having methylene skeleton or methine skeleton for being used to form the sputtering target of magnetosphere 3
Organic compound (presoma) and the constituent of Magnaglo be sintered to manufacture.At this point, using with methylene
In the case where the presoma of the organic compound of base skeleton or methine skeleton, generate due to making forerunner's precursor reactant with methylene
The organic compound of base skeleton or methine skeleton, therefore sintered density is improved.If the sintered density of sputtering target is lower,
Then in sputtering due to being abnormal electric discharge so that sputtering dust can be generated or the group of magnetospheric composition and sputtering target can be made
At difference become larger.
The content of the organic compound with methylene skeleton or methine skeleton in magnetosphere 3 is preferably 0.5 body
40 volume % of % or more is hereinafter, further preferably 1 volume % or more, 30 volume % or less for product.If having in magnetosphere 3
The content of the organic compound of methylene skeleton or methine skeleton is 0.5 volume % or more, then between adjacent magnetic-particle
Thermal insulation is improved, if its be 40 volume % hereinafter, if every 1 bit magnetic-particle volume increase, it is difficult to magnetic occurs
The heat fluctuation of recording medium 100.
The thickness of magnetosphere 3 is preferably 1nm or more 7nm hereinafter, further preferably 1.5nm or more 5.5nm or less.If
Magnetosphere 3 with a thickness of 1nm or more 7nm hereinafter, then can be improved with L10(001) orientation of the magnetosphere 3 of structure and
The degree of order.In addition, can be improved the intergranular thermal insulation of adjacent magnetic of the magnetosphere 3 with granular texture.
Magnetic-particle preferably comprises FePt alloy or CoPt alloy.The crystal magnetic anisotropy constant of magnetic-particle as a result,
Ku is improved.
As substrate 1, well known substrate can be used.
Here, when manufacturing magnetic recording media 100, it is sometimes desirable to which substrate 1 is heated to 500 DEG C or more of temperature.Therefore,
As substrate 1, the heat-resistant glass substrate that softening temperature is 500 DEG C or more, preferably 600 DEG C or more can be used for example.
As the material for constituting basal layer 2, as long as being suitble to make with L10The magnetosphere 3 of structure is orientated with (001), then
It is not particularly limited, for example, W, MgO etc. with (100) orientation.
In addition, basal layer 2 can have multilayered structure.In this case, the more of basal layer with multi-layer structure are constituted
Lattice mismatch (lattice misfit) between a layer is preferably 10% or less.
As basal layer with multi-layer structure, for example, W, the MgO that there are (100) to be orientated are formed as multilayer
The basal layer of structure.
In addition, there is (100) orientation in order to make basal layer 2 certainly, packet can be further formed in the lower section of basal layer 2
Layer containing Cr, the alloy containing Cr and with BCC structure or the alloy with B2 structure.
Here, as containing Cr and with BCC structure alloy, for example, CrMn, CrMo, CrW, CrV,
CrTi, CrRu etc..
In addition, as the alloy with B2 structure, for example, RuAl, NiAl etc..
In magnetic recording media 100, protective layer 4 can be formed on magnetosphere 3, but also can be omitted.
It as the forming method of protective layer 4, is not particularly limited, for example, using radio frequency plasma to by carbon
Change RF-CVD (the Radio Frequency-Chemical Vapor that the source material gas that hydrogen is constituted is decomposed and formed a film
Deposition: radio frequency chemical vapor deposition) method, using the electronics released from filament source material gas is ionized and formed a film
IBD (Ion Beam Deposition: the particle beams deposition) method, expect gas without using source but formed a film using solid carbon target
FCVA (Filtered Cathodic Vacuum Arc: filtering cathode vacuum electric arc) method etc..
The thickness of protective layer 4 is not particularly limited, such as preferably 1nm or more and 6nm or less.If protective layer 4
With a thickness of 1nm or more, then make the floating property of magnetic head good, if its be 6nm hereinafter, if reduce magnetic interval and make SNR
It is improved.
The lubricant layer of the fluororesin comprising holo-fluorine polyester can also be further formed on protective layer 4.
[magnetic memory apparatus]
For the magnetic memory apparatus of present embodiment, as long as it includes the magnetic recording media in above-mentioned present embodiment,
It is not particularly limited.
Magnetic memory apparatus in present embodiment is for example with the magnetic recording media driving for rotating magnetic recording media
Portion is equipped with magnetic head, the magnetic head drive divisions for keeping magnetic head mobile and the record regeneration letter of near field light producing element in top end part
Number processing system.In addition, magnetic head can have the laser generating unit for heating magnetic recording media and will be from laser generating unit
The waveguide of laser guide near field light producing element generated.
The example of the magnetic memory apparatus in present embodiment is shown in Fig. 2.
The magnetic memory apparatus of Fig. 2 has magnetic recording media 100, the magnetic recording media driving for rotating magnetic recording media
Portion 101, magnetic head 102, the magnetic head drive divisions 103 for keeping magnetic head mobile and record regenerating signal processing system 104.
The example of magnetic head 102 is shown in Fig. 3.
Magnetic head 102 has write head 208 and regeneration magnetic head 211.
Write head 208 has main pole 201, auxiliary magnetic pole 202, the coil 203 for generating magnetic field, raw as laser
At the laser diode (LD) 204 in portion and near field light producing element will to be transferred to from LD204 laser 205 generated
206 waveguide 207.
Regeneration magnetic head 211 has the regeneration elements 210 clipped by shielding part 209.
[embodiment]
Hereinafter, being illustrated by embodiment to effect of the invention.It should be noted that the present invention is not limited to following realities
Apply example.
(production of sputtering target 1)
By following manufacturing method, having manufactured has 90 volume % (70 moles of % (52 atom %Fe-48 atom %
Pt) -30 moles of %C) -10 volume % (polyimides) composition sputtering target.
Firstly, obtaining the FePt alloy powder of the composition with 52 atom %Fe-48 atom %Pt using gas atomization
End.The average grain diameter of FePt alloy powder is 15 μm.
By the polyamide of FePt alloy powder, carbon particle (15 μm of average grain diameter) and the presoma as polyimides
After sour U varnish S (the emerging production manufacture in space portion) is according to the mixing of above-mentioned ratio, it is kneaded and obtains creme.
Using spin coater, after creme is coated on the copper sheet of diameter 200mm in a manner of with a thickness of 2mm, vacuum is carried out
It is dry.Then, it after being heated 1 hour at 200 DEG C using baking oven, is heated 1 hour at 270 DEG C, obtains sputtering target 1.At this point, poly-
Amic acid is dehydrated and becomes polyimides.
(production of sputtering target 2)
By following manufacturing method, having manufactured has 90 volume % (70 moles of % (52 atom %Fe-48 atom %
Pt) -30 moles of %C) -10 volume % (melamine resin) composition sputtering target.
Firstly, obtaining the FePt alloy powder of the composition with 52 atom %Fe-48 atom %Pt using gas atomization
End.The average grain diameter of FePt alloy powder is 15 μm.
By the hydroxyl of FePt alloy powder, carbon particle (15 μm of average grain diameter) and the presoma as melamine resin
After methyl melamine is mixed according to above-mentioned ratio, it is kneaded and obtains creme.
Using spin coater, after creme is coated on the copper sheet of diameter 200mm in a manner of with a thickness of 2mm, vacuum is carried out
It is dry.Then, it after being heated 1 hour at 150 DEG C using baking oven, is heated 1 hour at 200 DEG C, obtains sputtering target 2.At this point, hydroxyl
Methyl melamine polycondensation and become melamine resin.
(production of sputtering target 3)
By following manufacturing method, having manufactured has 90 volume % (70 moles of % (52 atom %Fe-48 atom %
Pt) -30 moles of %C) -10 volume % (polyethylene) composition sputtering target.
Firstly, obtaining the FePt alloy powder of the composition with 52 atom %Fe-48 atom %Pt using gas atomization
End.The average grain diameter of FePt alloy powder is 15 μm.
By FePt alloy powder, carbon particle (15 μm of average grain diameter) and the high wax 410P (Mitsui Chemicals of low density polyethylene (LDPE)
Manufacture) according to above-mentioned ratio mixing after, be kneaded at 130 DEG C and obtain mixture.
Using 130 DEG C of roll coater, after mixture is coated on the copper sheet of diameter 200mm in a manner of with a thickness of 2mm,
It is dried in vacuo.Then, it is heated 2 hours at 270 DEG C using baking oven, obtains sputtering target 3.
(embodiment 1)
Firstly, forming basal layer in 2.5 inches of glass substrate.Specifically, in 2.5 inches of glass substrate,
50Co-50Ti (alloy of the Ti of the Co of 50 atom % and 50 atom %, the record below identical) film that film thickness is 50nm is formed to make
After the first basal layer, glass substrate is heated at 300 DEG C.Then, the 80Cr-20V that film thickness is 12nm is sequentially formed
Film forms W film that film thickness is 40nm as third basal layer as the second basal layer, and forming film thickness is the MgO membrane of 3nm as the
Four basal layers.It should be noted that using DC magnetic control sputtering device, and using Ar as sputter gas when forming basal layer.
Later, glass substrate is heated at 520 DEG C.Then, using RF sputtering equipment and sputtering target 1, in substrate
The magnetosphere with a thickness of 2nm is formed on layer.At this point, using Ar as sputter gas.Later, the temperature of glass substrate is set as
480℃。
By carrying out fourier-transform infrared spectrum analysis (FT-IR) to magnetosphere, in 1100cm-1Nearby observe Yin Ya
Signal caused by methyl skeleton or methine skeleton is confirmed in magnetosphere comprising polyimides.According to because of methylene skeleton
Or the intensity of signal caused by methine skeleton, estimate that the content of the polyimides in magnetosphere is about 3 volume %.
Later, the protective layer being made of DLC with a thickness of 3nm is formed on magnetosphere.Then, on the surface of protective layer
The lubricant layer being made of the fluororesin of holo-fluorine polyester with a thickness of 1.2nm is formed, to manufacture magnetic recording media.
By carrying out X-ray diffraction analysis to magnetic recording media, confirm that basal layer is that (100) with BCC structure take
To film and magnetosphere is with L10(001) alignment films of structure.
(embodiment 2)
In addition to using sputtering target 2 other than replacing sputtering target 1, magnetic recording media is manufactured similarly to Example 1.
By carrying out fourier-transform infrared spectrum analysis (FT-IR) to magnetosphere, in 1500cm-1Nearby observe because of three
Signal caused by cymel is confirmed in magnetosphere comprising melamine resin.Cause according to because of melamine resin
Signal intensity, estimate that the content of melamine resin in magnetosphere is about 2 volume %.
By carrying out X-ray diffraction analysis to magnetic recording media, confirm that basal layer is that (100) with BCC structure take
To film and magnetosphere is with L10(001) alignment films of structure.
(embodiment 3)
In addition to using sputtering target 3 other than replacing sputtering target 1, magnetic recording media is manufactured similarly to Example 1.
By carrying out fourier-transform infrared spectrum analysis (FT-IR) to magnetosphere, in 1450cm-1It nearby observes because poly-
Signal caused by ethylene is confirmed in magnetosphere comprising polyethylene.The intensity of signal caused by because of polyethylene estimates magnetic
The content of polyethylene in property layer is about 2 volume %.
By carrying out X-ray diffraction analysis to magnetic recording media, confirm that basal layer is that (100) with BCC structure take
To film and magnetosphere is with L10(001) alignment films of structure.
(Comparative Examples 1 and 2)
Other than being set as forming shown in table 1 by magnetospheric composition, magnetic recording medium is manufactured similarly to Example 1
Matter.
By carrying out X-ray diffraction analysis to magnetic recording media, confirm that basal layer is that (100) with BCC structure take
To film and magnetosphere is with L10(001) alignment films of structure.
Then, the SNR of magnetic recording media and coercivity are measured.
(SNR)
Using the magnetic head of Fig. 3, the SNR of magnetic recording media is measured.
(coercivity)
Using the magnetization curve measuring device (Neoark manufacture) using Kerr effect, to the coercivity of magnetic recording media
(Hc) it measures.
The measurement result of the SNR and Hc of magnetic recording media are shown in table 1.
[table 1]
As it can be seen from table 1 the SNR and Hc higher of the magnetic recording media of embodiment 1,2.
In contrast, in the magnetic recording media of Comparative Examples 1 and 2, there is Asia since the crystal boundary portion in magnetic-particle is not present
The organic compound of methyl skeleton or methine skeleton, therefore SNR and Hc are lower.
Symbol description
1 substrate
2 basal layers
3 magnetospheres
4 protective layers
100 magnetic recording medias
101 magnetic recording media drive divisions
102 magnetic heads
103 magnetic head drive divisions
104 record regenerating signal processing systems
201 main poles
202 auxiliary magnetic poles
203 coils
204 laser diodes (LD)
205 laser
206 near field light producing element
207 waveguides
208 write heads
209 shielding parts
210 regeneration elements
211 regeneration magnetic heads
Claims (10)
1. a kind of magnetic recording media is successively orientated with substrate, basal layer and with (001) and has L10The magnetism of structure
Layer,
The magnetosphere has granular texture, and exists in the crystal boundary portion of magnetic-particle with methylene skeleton or methine bone
The organic compound of frame.
2. magnetic recording media according to claim 1, wherein the organic compound is organic compounds containing nitrogen.
3. magnetic recording media according to claim 2, wherein the organic compounds containing nitrogen is polyimides, melamine
Polyimide resin or compound with amido bond or urethane bond.
4. magnetic recording media according to any one of claim 1 to 3, wherein described magnetospheric with methylene bone
The content of the organic compound of frame or methine skeleton is 0.5 volume % or more, 40 volume % or less.
5. magnetic recording media according to any one of claim 1 to 3, wherein
The methylene skeleton includes by chemical formula
[changing 1]
The two kinds of skeletons indicated,
The methine skeleton includes by chemical formula
[changing 2]
The two kinds of skeletons indicated.
6. magnetic recording media according to any one of claim 1 to 3, wherein described magnetospheric with a thickness of 1nm or more
7nm or less.
7. magnetic recording media according to any one of claim 1 to 3, wherein the magnetic-particle includes FePt alloy
Or CoPt alloy.
8. a kind of magnetic memory apparatus, including magnetic recording media according to any one of claim 1 to 7.
9. one kind is used to form magnetospheric sputtering target, comprising:
Organic compounds containing nitrogen and magnetic material,
The organic compounds containing nitrogen is polyimides, melamine resin or the compound with amido bond or urethane bond,
The content of the organic compounds containing nitrogen is 0.5 volume % or more, 40 volume % or less.
10. a kind of manufacturing method for being used to form magnetospheric sputtering target, comprising:
The constituent of the presoma and Magnaglo that include the steps that organic compounds containing nitrogen is sintered,
The organic compounds containing nitrogen is polyimides, melamine resin or the compound with amido bond or urethane bond.
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| JP2017234838A JP6932628B2 (en) | 2017-12-07 | 2017-12-07 | Magnetic recording medium |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107316A (en) * | 1987-10-21 | 1989-04-25 | Hitachi Maxell Ltd | Magnetic recording medium and apparatus for producing same |
| CN1293809A (en) * | 1998-03-20 | 2001-05-02 | 松下电器产业株式会社 | Master information carrier |
| CN104681045A (en) * | 2013-12-03 | 2015-06-03 | 株式会社东芝 | Perpendicular magnetic recording medium |
| CN105874536A (en) * | 2014-08-12 | 2016-08-17 | 富士电机株式会社 | Magnetic recording medium |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6479928A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Maxell | Magnetic recording medium |
| JP2684201B2 (en) * | 1987-11-26 | 1997-12-03 | 日立マクセル株式会社 | Magnetic recording media |
| JPH10125520A (en) * | 1996-10-21 | 1998-05-15 | Toshiba Corp | Magnetic recording medium |
| US20050202287A1 (en) * | 2004-03-10 | 2005-09-15 | Seagate Technology Llc | Thermally isolated granular media for heat assisted magnetic recording |
| CN104205217B (en) * | 2012-03-22 | 2017-10-13 | 富士电机株式会社 | The magnetic recording media of HAMR |
| JP6014385B2 (en) * | 2012-05-14 | 2016-10-25 | 昭和電工株式会社 | Magnetic recording medium and magnetic recording / reproducing apparatus |
-
2017
- 2017-12-07 JP JP2017234838A patent/JP6932628B2/en active Active
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2018
- 2018-10-24 US US16/169,065 patent/US11244700B2/en active Active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01107316A (en) * | 1987-10-21 | 1989-04-25 | Hitachi Maxell Ltd | Magnetic recording medium and apparatus for producing same |
| CN1293809A (en) * | 1998-03-20 | 2001-05-02 | 松下电器产业株式会社 | Master information carrier |
| CN104681045A (en) * | 2013-12-03 | 2015-06-03 | 株式会社东芝 | Perpendicular magnetic recording medium |
| CN105874536A (en) * | 2014-08-12 | 2016-08-17 | 富士电机株式会社 | Magnetic recording medium |
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| US11244700B2 (en) | 2022-02-08 |
| JP6932628B2 (en) | 2021-09-08 |
| CN109979492B (en) | 2021-01-12 |
| JP2019102114A (en) | 2019-06-24 |
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