CN109976049A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
- Publication number
- CN109976049A CN109976049A CN201910277776.0A CN201910277776A CN109976049A CN 109976049 A CN109976049 A CN 109976049A CN 201910277776 A CN201910277776 A CN 201910277776A CN 109976049 A CN109976049 A CN 109976049A
- Authority
- CN
- China
- Prior art keywords
- area
- goa
- substrate
- layer
- display area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
Present applicant proposes a kind of display panel and preparation method thereof, which includes display area and the non-display area positioned at display area periphery；The non-display area includes GOA cabling area and GOA thread-changing area；Substrate and the padded portion on the substrate are provided in the GOA thread-changing area.The application reduces the ground potential difference between GOA thread-changing area and display area, avoids when the GOA thread-changing area forms via hole, film material is accumulated to the via hole periphery, improves the quality of display panel by the way that padded portion is arranged in the GOA thread-changing area.
Description
Technical field
This application involves display field, in particular to a kind of display panel and preparation method thereof.
Background technique
Array gate driving (Gate Driver On Array, GOA) is exactly to utilize existing thin film transistor liquid crystal display
Gate line scanning drive signal circuit production in array substrate, is realized the drive progressively scanned to grid by the array process in device
Flowing mode.
In GOA circuit, the Gate cabling positioned at non-display area is M2 cabling (source-drain electrode layer), positioned at display area
Gate cabling is M1 cabling (grid layer).Therefore, the Gate cabling needs of non-display area are changed by via hole in existing GOA circuit
Metal wire of the line extremely with the Gate cabling same layer of display area.And since the via hole periphery close to display area is topography low spot,
Therefore it is easy to cause the film material in display area to accumulate to the via hole periphery when forming via hole, influences the quality of product.
Therefore, a kind of display panel is needed at present to solve the above problems.
Summary of the invention
The application provides a kind of display panel and preparation method thereof, to solve the grid thread-changing area film layer of existing display panel
The technical issues of material stacking.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of display panel comprising display area and the non-display area positioned at the display area periphery
Domain；
The non-display area includes GOA cabling area and GOA thread-changing area；
Substrate and the padded portion on the substrate are provided in GOA thread-changing area.
In the display panel of the application,
The non-display area further includes public cabling area；
The public cabling area is between GOA cabling area and the display area；
GOA thread-changing area is located in the public cabling area.
In the display panel of the application,
The orthographic projection of GOA thread-changing area over the substrate and the orthographic projection of the public cabling area over the substrate
It is not overlapped.
In the display panel of the application,
Color blocking in the spacing and the display area of surface of the padded portion far from the one side of substrate and the substrate
The absolute value of the difference of spacing of the surface of the separate one side of substrate of layer to the substrate is less than threshold value.
In the display panel of the application,
The padded portion includes one of color blocking unit, black photoresist or photoresist；
When the padded portion is color blocking unit, the padded portion includes red color resistance block, green color blocking block or blue color
One of stop block.
In the display panel of the application,
First kind signal wire, the second class signal wire and via hole are provided in the thread-changing area；
The first kind signal wire is electrically connected by the via hole with the second class signal wire；
The first kind signal wire is formed in light shield technique with the grid layer in the display area with along with；
The second class signal wire is formed in light shield technique with the source-drain electrode layer in the display area with along with.
In the display panel of the application, it is provided with GOA signal wire in GOA cabling area, is arranged in public cabling area
There is public electrode wire；
The GOA signal wire is formed in light shield technique with the source-drain electrode layer in the display area with along with；
The public electrode wire is formed in light shield technique with the grid layer in the display area with along with.
The production method that the application also proposed a kind of display panel, wherein the display panel include display area and
Non-display area positioned at the display area periphery；
The non-display area includes GOA cabling area, GOA thread-changing area and public cabling area, and GOA thread-changing area is located at
In the public cabling area；
The production method of the display panel includes:
One substrate is provided, forms tft layer over the substrate；
Color blocking layer is formed on the corresponding tft layer in the display area and in the public cabling area
Padded portion is formed on the corresponding tft layer；
Pixel electrode layer is formed in the color blocking layer.
In the production method of the application,
A substrate is provided, the step of formation tft layer includes: over the substrate
Grid layer is formed over the substrate, comprising:
The first metal layer is formed over the substrate；
Using the first light shield technique, the patterned processing of the first metal layer is made to form the grid for being located at the display area
Pole floor, the first signal wire positioned at the public electrode wire in the public cabling area and positioned at the thread-changing area；
And
Source-drain electrode layer is formed on the substrate, comprising:
Second metal layer is formed over the substrate；
Using the second light shield technique, the patterned processing of the second metal layer is made to form the source for being located at the display area
Drain electrode layer, the second signal line positioned at the GOA signal wire in GOA cabling area and positioned at the thread-changing area.
In the production method of the application,
The orthographic projection of GOA thread-changing area over the substrate and the orthographic projection of the public cabling area over the substrate
It is not overlapped.
The utility model has the advantages that the display panel includes display area present applicant proposes a kind of display panel and preparation method thereof
With the non-display area for being located at display area periphery；The non-display area includes GOA cabling area and GOA thread-changing area；The GOA is changed
Substrate and the padded portion on the substrate are provided in line area.The application is subtracted by the way that padded portion is arranged in the GOA thread-changing area
Ground potential difference between small GOA thread-changing area and display area, avoid the GOA thread-changing area formed via hole when, film material to this
The accumulation of via hole periphery, improves the quality of display panel.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the plane structure chart of the application display panel；
Fig. 2 is the enlarged drawing of region X in Fig. 1；
Fig. 3 is the sectional view of the middle section Fig. 2 AA；
The step of Fig. 4 is the application display panel production method is schemed.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
Referring to Fig. 1, Fig. 1 is the plane structure chart of the application display panel 100.
The display panel 100 includes display area 10 and the non-display area 20 positioned at 10 periphery of display area.
The display area 10 is for showing image.
It is provided in the non-display area positioned at the GOA cabling area 21 of 100 two sides of display panel and positioned at described
The driving chip 22 of 100 bottom end of display panel.
GOA signal wire 211 is provided in GOA cabling area 21.The GOA signal wire 211 is for transmitting or receiving
The driving signal of the display panel 100.
In the present embodiment, the GOA signal wire 211 is with the source-drain electrode layer 127 of the display panel 100 in the light with along with
It is formed in cover technique.
Referring to Fig. 2, Fig. 2 is the enlarged drawing of region X in Fig. 1.
The non-display area 20 further includes GOA thread-changing area 23 and public cabling area 24.
GOA thread-changing area 23 and the public cabling area 24 are located at display area 10 described in 21 domain of GOA cabling area
Between.
First kind signal wire 231, the second class signal wire 232 and via hole 233 are provided in GOA thread-changing area 23.Institute
It states first kind signal wire 231 and is electrically connected by the via hole 233 with the second class signal wire 232.The public cabling area 24
Inside it is provided with public electrode wire 241.GOA thread-changing area 23 is located in the public cabling area 24, by the public cabling area
24 are surrounded.
In the present embodiment, the public electrode wire 241 is with the grid layer 125 in the display area 10 in the light with along with
It is formed in cover technique.But the public electrode wire 241 and the grid line insulation set in the grid layer 125.
In the present embodiment, the public electrode wire 241 and the first kind signal wire 231 and the second class signal wire
232 insulation sets.
In the present embodiment, orthographic projection of the GOA thread-changing area 23 on the substrate 11 of the display panel 100 with it is described
Orthographic projection of the public cabling area 24 on the substrate 11 is not overlapped.
Referring to Fig. 3, Fig. 3 is the sectional view of the middle section Fig. 2 AA.
It is provided with substrate 11, the tft layer on the substrate 11 in the display area 10 and is located at institute
State the color blocking layer 13 on tft layer.
In the present embodiment, the substrate 11 can be one of glass substrate, quartz base plate, resin substrate etc..
The substrate 11 can also be flexible base board, and the material of the flexible base board can be PI (polyimides).
The tft layer may include multiple film crystal pipe units 12.
The film crystal pipe unit 12 includes etch stop layer type, back channel etch type or top-gate thin-film transistors type etc.
Structure, specific there is no limit.The application is illustrated by taking top-gate thin-film transistors type as an example.
The film crystal pipe unit may include the light shield layer 121 being located on the substrate 11, be located at the light shield layer
Buffer layer 122 on 121, the active layer 123 on the buffer layer 122, the gate insulation layer on the active layer 123
124, the grid layer 125 on the gate insulation layer 124, on the grid layer 125 between insulating layer 126, be located at institute
State the source-drain electrode layer 127 on an insulating layer 126, the passivation layer 128 on the source-drain electrode layer 127.
In the non-display area 20, substrate 11 is provided in GOA thread-changing area 23, on the substrate 11
Buffer layer 122, the gate insulation layer 124 on the buffer layer 122, on the gate insulation layer 124 between insulating layer
126 and the padded portion 30 between described on insulating layer 126.
In the present embodiment, the padded portion 30 can for color blocking unit, black photoresist or photoresist etc. other it is organic or
One of inorganic matter.
In the present embodiment, it is contemplated that the padded portion 30 of process costs problem, the application is selected as color blocking unit.Institute
Stating padded portion 30 can be one of red color resistance block, green color blocking block or blue color blocking block, and specific there is no limit.
In the present embodiment, the padded portion 30 can also cover the entire public cabling area 24.
Referring to Fig. 3, being additionally provided with the first kind signal wire on gate insulation layer 124 in GOA thread-changing area 23
231, the second class signal wire 232 between described on insulating layer 126.
In the present embodiment, the first kind signal wire 231 is with the grid layer 125 in the display area 10 with along with
It is formed in light shield technique；The second class signal wire 232 is with the source-drain electrode layer 127 in the display area 10 in the light shield with along with
It is formed in technique.
Since the first kind signal wire 231 is arranged with 241 same layer of public electrode wire, in order to guarantee the first kind
The short circuit of signal wire 231 and the public electrode wire 241, the first kind signal wire 231 should with the public electrode wire 241
Insulation set.
GOA thread-changing area 23 is additionally provided with via hole 233, and the via hole 233 is thread-changing hole.The first kind signal wire
231 are electrically connected by the via hole 233 with the second class signal wire 232.
In the present embodiment, the first kind signal wire 231 is electrically connected with the scan line (grid line) in the display area 10
It connects, the second class signal wire 232 is electrically connected with the GOA signal wire 211 in GOA cabling area 21.The first kind signal wire
231, the second class signal wire 232 and the via hole 233 are electrically connected the GOA signal wire 211 with the scan line, carry out
The reception and transmitting of data-signal.
In the present embodiment, the spacing of surface of the padded portion 30 far from 11 side of substrate and the substrate 11 with
The difference of spacing of surface of the color blocking layer 13 far from 11 side of substrate to the substrate 11 is exhausted in the display area 10
Threshold value is less than to value.
The padded portion 30 can be formed in light shield technique together with the color blocking layer 13 of display area 10, can also be independent
Apply one of light shield technique.As long as guaranteeing thickness and institute of the padded portion 30 in the public cabling area 24 to corresponding substrate 11
The thickness for stating color blocking layer 13 to corresponding substrate 11 in display area 10 is not much different.
In the display panel 100 of the application, since public cabling area 24 is arranged close to the display area 10, the public affairs
Color blocking unit is both provided in cabling area 24 and the display area 10 altogether.And the thickness display panel of color blocking unit
Each film layer structure in 100 arrays is larger, therefore the public cabling area 24 and 10 actual (real) thickness difference of the display area are smaller.
Referring to Fig. 4, Fig. 4 schemes the step of being 100 production method of the application display panel.
Referring to Fig. 1, the display panel 100 of the application includes display area 10 and is located at outside the display area 10
The non-display area 20 enclosed.The display area 10 is for showing image.
It is provided in the non-display area positioned at the GOA cabling area 21 of 100 two sides of display panel and positioned at described
The driving chip 22 of 100 bottom end of display panel.
GOA signal wire 211 is provided in GOA cabling area 21.The GOA signal wire 211 is for transmitting or receiving
The driving signal of the display panel 100.
Referring to Fig. 2, the non-display area 20 further includes GOA thread-changing area 23 and public cabling area 24.The GOA thread-changing
Area 23 and the public cabling area 24 are located between display area 10 described in 21 domain of GOA cabling area.
The production method comprising steps of
S10, a substrate 11 is provided, forms tft layer on the substrate 11；
Fig. 3 please be participate in, in the present embodiment, the substrate 11 can be glass substrate, quartz base plate, resin substrate etc.
One of.The substrate 11 can also be flexible base board, and the material of the flexible base board can be PI (polyimides).
The tft layer may include multiple film crystal pipe units 12.
The film crystal pipe unit 12 includes etch stop layer type, back channel etch type or top-gate thin-film transistors type etc.
Structure, specific there is no limit.The application is illustrated by taking top-gate thin-film transistors type as an example.
The step of forming film crystal pipe unit 12 may include:
Light shield layer 121 is formed on the substrate 11；The buffer layer 122 formed on the light shield layer 121；Described slow
Rush formation active layer 123 on layer 122；Gate insulation layer 124 is formed on the active layer 123；The shape on the gate insulation layer 124
At grid layer 125；Insulating layer 126 between being formed on the grid layer 125；Source-drain electrode layer is formed between described on insulating layer 126
127；Passivation layer 128 is formed on the source-drain electrode layer 127.
It is specifically included in the step of forming grid layer 125:
The first metal layer is formed on the substrate 11；
Using the first light shield technique, the patterned processing of the first metal layer forms the grid for being located at the display area 10
Pole floor 125, the first signal wire positioned at the public electrode wire 241 in the public cabling area 24 and positioned at the thread-changing area.
It is specifically included in the step of forming source-drain electrode layer 127:
Second metal layer is formed on the substrate 11；
Using the second light shield technique, the patterned processing of second metal layer forms the source for being located at the display area 10
Drain electrode layer 127, the second signal line positioned at the GOA signal wire 211 in GOA cabling area 21 and positioned at the thread-changing area.
S20, color blocking layer 13 is formed on the corresponding tft layer in the display area 10 and in the public affairs
Padded portion 30 is formed on the corresponding tft layer in cabling area 24 altogether；
Fig. 3 please be participate in, in this step, the corresponding color blocking layer 13 in the display area 10 includes multiple color blocking lists
Member, the color blocking unit may include one of red color resistance block, green color blocking block or blue color blocking block.
In the present embodiment, the padded portion 30 can for color blocking unit, black photoresist or photoresist etc. other it is organic or
One of inorganic matter.
In the present embodiment, it is contemplated that the padded portion 30 of process costs problem, the application is selected as color blocking unit.Institute
Stating padded portion 30 can be one of red color resistance block, green color blocking block or blue color blocking block, and specific there is no limit.
In the present embodiment, the padded portion 30 can also cover the entire public cabling area 24.
S30, pixel electrode layer is formed in the color blocking layer 13.
Fig. 3 please be participate in, the pixel electrode layer (not shown) is located in the corresponding color blocking layer 13 in the display area 10.Institute
Pixel electrode layer is stated to be electrically connected by via hole with the source-drain electrode layer 127.
It is additionally provided with the first kind signal wire 231 on gate insulation layer 124 in GOA thread-changing area 23, is located at described
Between the second class signal wire 232 on insulating layer 126.Public electrode wire 241 is provided in the public cabling area 24.The GOA
Thread-changing area 23 is located in the public cabling area 24, is surrounded by the public cabling area 24.
In the present embodiment, although the public electrode wire 241 with the grid layer 125 in the display area 10 same
It is formed in road light shield technique, but the still public electrode wire 241 and the grid line insulation set in the grid layer 125, each other
It is non-intersecting.
In the present embodiment, the public electrode wire 241 and the first kind signal wire 231 and the second class signal wire
232 insulation sets.
In the present embodiment, orthographic projection of the GOA thread-changing area 23 on the substrate 11 of the display panel 100 with it is described
Orthographic projection of the public cabling area 24 on the substrate 11 is not overlapped.
Since the first kind signal wire 231 is arranged with 241 same layer of public electrode wire, in order to guarantee the first kind
The short circuit of signal wire 231 and the public electrode wire 241, the first kind signal wire 231 should with the public electrode wire 241
Insulation set.
GOA thread-changing area 23 is additionally provided with via hole 233, and the via hole 233 is thread-changing hole.The first kind signal wire
231 are electrically connected by the via hole 233 with the second class signal wire 232.
In the present embodiment, the first kind signal wire 231 is electrically connected with the scan line (grid line) in the display area 10
It connects, the second class signal wire 232 is electrically connected with the GOA signal wire 211 in GOA cabling area 21.The first kind signal wire
231, the second class signal wire 232 and the via hole 233 are electrically connected the GOA signal wire 211 with the scan line, carry out
The reception and transmitting of data-signal.
In the present embodiment, the spacing of surface of the padded portion 30 far from 11 side of substrate and the substrate 11 with
The difference of spacing of surface of the color blocking layer 13 far from 11 side of substrate to the substrate 11 is exhausted in the display area 10
Threshold value is less than to value.
The padded portion 30 can be formed in light shield technique together with the color blocking layer 13 of display area 10, can also be independent
Apply one of light shield technique.As long as guaranteeing thickness and institute of the padded portion 30 in the public cabling area 24 to corresponding substrate 11
The thickness for stating color blocking layer 13 to corresponding substrate 11 in display area 10 is not much different.
In the display panel 100 of the application, since public cabling area 24 is arranged close to the display area 10, the public affairs
Color blocking unit is both provided in cabling area 24 and the display area 10 altogether.And the thickness display panel of color blocking unit
Each film layer structure in 100 arrays is larger, therefore the public cabling area 24 and 10 actual (real) thickness difference of the display area are smaller.
The application also proposed a kind of display module, and the display module includes above-mentioned display panel.The display module
It further include the layer of polarizer and cover layer on the display panel.The working principle of the display module and the display surface
Plate it is same or similar, the application repeats no more.
Present applicant proposes a kind of display panel and preparation method thereof, which includes display area and shows positioned at this
Show the non-display area of area periphery；The non-display area includes GOA cabling area and GOA thread-changing area；It is arranged in the GOA thread-changing area
There are substrate and the padded portion on the substrate.The application reduces GOA thread-changing by the way that padded portion is arranged in the GOA thread-changing area
Ground potential difference between area and display area is avoided when the GOA thread-changing area forms via hole, and film material is to the via hole periphery heap
Product, improves the quality of display panel.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of display panel, which is characterized in that the non-display area including display area and positioned at the display area periphery；
The non-display area includes GOA cabling area and GOA thread-changing area；
Substrate and the padded portion on the substrate are provided in GOA thread-changing area.
2. display panel according to claim 1, which is characterized in that
The non-display area further includes public cabling area；
The public cabling area is between GOA cabling area and the display area；
GOA thread-changing area is located in the public cabling area.
3. display panel according to claim 2, which is characterized in that
The orthographic projection of GOA thread-changing area over the substrate is not weighed with the orthographic projection of the public cabling area over the substrate
It is folded.
4. display panel according to claim 1, which is characterized in that
Surface of the padded portion far from the one side of substrate is remote with color blocking layer in the display area with the spacing of the substrate
The absolute value of difference of spacing of surface from the one side of substrate to the substrate is less than threshold value.
5. display panel according to claim 1, which is characterized in that
The padded portion includes one of color blocking unit, black photoresist or photoresist；
When the padded portion is color blocking unit, the padded portion includes red color resistance block, green color blocking block or blue color blocking block
One of.
6. display panel according to claim 1, which is characterized in that
First kind signal wire, the second class signal wire and via hole are provided in the thread-changing area；
The first kind signal wire is electrically connected by the via hole with the second class signal wire；
The first kind signal wire is formed in light shield technique with the grid layer in the display area with along with；
The second class signal wire is formed in light shield technique with the source-drain electrode layer in the display area with along with.
7. display panel according to claim 6, which is characterized in that the GOA cabling is provided with GOA signal wire in area,
Public electrode wire is provided in public cabling area；
The GOA signal wire is formed in light shield technique with the source-drain electrode layer in the display area with along with；
The public electrode wire is formed in light shield technique with the grid layer in the display area with along with.
8. a kind of production method of display panel, which is characterized in that the display panel includes display area and is located at described aobvious
Show the non-display area of area periphery；
The non-display area includes GOA cabling area, GOA thread-changing area and public cabling area, and GOA thread-changing area is located at described
In public cabling area；
The production method of the display panel includes:
One substrate is provided, forms tft layer over the substrate；
Color blocking layer is formed on the corresponding tft layer in the display area and is corresponded in the public cabling area
The tft layer on form padded portion；
Pixel electrode layer is formed in the color blocking layer.
9. production method according to claim 8, which is characterized in that
A substrate is provided, the step of formation tft layer includes: over the substrate
Grid layer is formed over the substrate, comprising:
The first metal layer is formed over the substrate；
Using the first light shield technique, the patterned processing of the first metal layer is made to form the grid for being located at the display area
Floor, the first signal wire positioned at the public electrode wire in the public cabling area and positioned at the thread-changing area；
And
Source-drain electrode layer is formed on the substrate, comprising:
Second metal layer is formed over the substrate；
Using the second light shield technique, the patterned processing of the second metal layer is made to form the source-drain electrode for being located at the display area
Floor, the second signal line positioned at the GOA signal wire in GOA cabling area and positioned at the thread-changing area.
10. production method according to claim 8, which is characterized in that
The orthographic projection of GOA thread-changing area over the substrate is not weighed with the orthographic projection of the public cabling area over the substrate
It is folded.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910277776.0A CN109976049A (en) | 2019-04-08 | 2019-04-08 | Display panel and preparation method thereof |
| PCT/CN2019/084223 WO2020206751A1 (en) | 2019-04-08 | 2019-04-25 | Display panel, display module, and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910277776.0A CN109976049A (en) | 2019-04-08 | 2019-04-08 | Display panel and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109976049A true CN109976049A (en) | 2019-07-05 |
Family
ID=67083500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910277776.0A Pending CN109976049A (en) | 2019-04-08 | 2019-04-08 | Display panel and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109976049A (en) |
| WO (1) | WO2020206751A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111103715A (en) * | 2019-12-23 | 2020-05-05 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
| WO2021007938A1 (en) * | 2019-07-18 | 2021-01-21 | Tcl华星光电技术有限公司 | Goa device and gate drive circuit |
| CN113138487A (en) * | 2021-04-13 | 2021-07-20 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090261339A1 (en) * | 2008-04-18 | 2009-10-22 | Tung-Chang Tsai | Gate driver on array of a display and method of making device of a display |
| CN106547127A (en) * | 2017-01-16 | 2017-03-29 | 上海天马微电子有限公司 | Array base palte, display panels and display device |
| CN109343280A (en) * | 2018-11-26 | 2019-02-15 | 惠科股份有限公司 | A kind of display panel and display device |
| CN109557708A (en) * | 2018-11-26 | 2019-04-02 | 惠科股份有限公司 | A kind of display panel and display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456746B (en) * | 2013-09-10 | 2016-04-13 | 北京京东方光电科技有限公司 | A kind of array base palte and preparation method thereof, display unit |
| CN105702685B (en) * | 2016-03-01 | 2018-09-04 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| CN107121852B (en) * | 2017-06-20 | 2020-05-05 | 武汉华星光电技术有限公司 | Array substrate and liquid crystal panel |
| CN108761941B (en) * | 2018-05-31 | 2021-04-20 | Tcl华星光电技术有限公司 | COA type liquid crystal display panel structure and manufacturing method of COA type liquid crystal display panel |
| CN109346463B (en) * | 2018-10-10 | 2020-11-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel with electrostatic protection and manufacturing method thereof |
-
2019
- 2019-04-08 CN CN201910277776.0A patent/CN109976049A/en active Pending
- 2019-04-25 WO PCT/CN2019/084223 patent/WO2020206751A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090261339A1 (en) * | 2008-04-18 | 2009-10-22 | Tung-Chang Tsai | Gate driver on array of a display and method of making device of a display |
| CN106547127A (en) * | 2017-01-16 | 2017-03-29 | 上海天马微电子有限公司 | Array base palte, display panels and display device |
| CN109343280A (en) * | 2018-11-26 | 2019-02-15 | 惠科股份有限公司 | A kind of display panel and display device |
| CN109557708A (en) * | 2018-11-26 | 2019-04-02 | 惠科股份有限公司 | A kind of display panel and display device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021007938A1 (en) * | 2019-07-18 | 2021-01-21 | Tcl华星光电技术有限公司 | Goa device and gate drive circuit |
| US11436990B2 (en) | 2019-07-18 | 2022-09-06 | Tcl China Star Optoelectronics Technology Co., Ltd. | GOA device and gate driving circuit |
| CN111103715A (en) * | 2019-12-23 | 2020-05-05 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN111103715B (en) * | 2019-12-23 | 2023-03-31 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN113138487A (en) * | 2021-04-13 | 2021-07-20 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| JP7397556B2 (en) | 2021-04-13 | 2023-12-13 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020206751A1 (en) | 2020-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8362491B2 (en) | Liquid crystal display device and method for fabricating the same | |
| KR101153528B1 (en) | Active matrix substrate, display device and television receiver | |
| CN104749805B (en) | Display device | |
| EP2023195B1 (en) | Liquid crystal display device | |
| WO2017166392A1 (en) | Array substrate and manufacturing method therefor, display panel and display device | |
| US8411216B2 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and active matrix substrate manufacturing method | |
| CN101540333B (en) | Thin-film transistor substrate and display device having the same | |
| JP2011090281A (en) | Flat panel display device and method of manufacturing the same | |
| CN109976049A (en) | Display panel and preparation method thereof | |
| US20110149172A1 (en) | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and active matrix substrate manufacturing method | |
| US20070090357A1 (en) | Thin film transistor, pixel structure and repairing method thereof | |
| EP1180716A3 (en) | Thin film semiconductor device and liquid crystal display unit, and fabrication methods thereof | |
| US5852482A (en) | TFT array of liquid crystal display where dataline and source electrode projecting therefrom cross gate lines at only two points and repair method thereof | |
| CN105789225A (en) | Array substrate mother board, manufacturing method of array substrate mother board, display device and manufacturing method of display device | |
| CN104900676A (en) | Array substrate, manufacturing method thereof and display device | |
| CN101384949A (en) | Active matrix substrate, display, television receiver, method for producing active matrix substrate and method for forming gate insulation film | |
| US20080251797A1 (en) | Array substrate and method for manufacturing the same | |
| US8748892B2 (en) | Thin film transistor and method for fabricating the same | |
| US8552433B2 (en) | Display device | |
| US8248565B2 (en) | Active device array substrate | |
| KR101151797B1 (en) | A Substrate for LCD and method of fabrication thereof | |
| CN109887968A (en) | A kind of display panel and preparation method thereof | |
| CN101852957B (en) | Active element array substrate | |
| US20130106679A1 (en) | Lcd panel and method of manufacturing the same | |
| KR101217500B1 (en) | Liquid crystal display device and method for fabricating thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190705 |