CN1099759C - High-frequency device - Google Patents

Abstract

The present invention relates to a high-frequency device which aims to assure vibration resistance, enable tuning simplicity and obtain a clean oscillator signal in a high frequency device for receiving the high-frequency signals of digital modulation. The high-frequency device is provided with an input terminal and an output terminal, wherein the input of one end of the input terminal is provided by a signal input by the input terminal, and the input of the other end obtains a frequency mixer of an output signal of a local oscillator; the output terminal is used for providing an output signal of the frequency mixer; a voltage control oscillator of the local oscillator is composed of an oscillation part and a tuning part; the tuning part has a movable conductor and an adhesive for maintaining an adjusted state; a control loop has loop frequency bandwidth which is enough large to enable the noise of the local oscillator not to be influenced by the noise of the voltage controlled oscillator.

Description

High-frequency device

Technical field

The present invention relates to receive the high-frequency device of the high-frequency signal of digital modulation.

Background technology

In above-mentioned existing high-frequency device, in order to improve shock resistance, the inductance of the tuning part of voltage-controlled oscillator only uses strip line (strip line) to constitute.

That is to say that then owing to the influence of vibration, the lead of coil also vibrates, and causes the change of inductance value if inductance constitutes with for example coil component, consequently, tuned frequency departs from.Take place for fear of this situation, only be used on the substrate strip line that fixing Copper Foil forms and constitute inductance, try to achieve vibration stablizing down with this.

But problem is, if only constitute the inductance of tuning part with strip line, then in order to revise the part constant of the electronic component that constitutes local oscillator and the deviation that the installation site causes before finishing, it is very difficult carrying out tuning adjustment by the fine setting of this inductance.

Summary of the invention

Therefore, the objective of the invention is to, provide to have the raising of guaranteeing shock resistance and the long-time stability of frequency of oscillation, tuning adjustment simultaneously can be carried out simply, and the high-frequency device of the inductance of the few clean output signal of phase noise can be provided to frequency mixer by local oscillator.

And in order to reach this purpose, the present invention possesses: the input terminal of the high-frequency signal of input digit modulation, the input of one end by the input signal of this input terminal provide, simultaneously to other end input go up the input local oscillator output signal frequency mixer and the lead-out terminal of the output signal of this frequency mixer is provided; Above-mentioned local oscillator comprises voltage-controlled oscillator and is in frequency divider, phase comparator, loop filter in the control loop of this voltage-controlled oscillator.Again, above-mentioned voltage-controlled oscillator has oscillating portion and tuning portion.And this tuning portion has frequency adjustment part and the means of keeping of keeping the adjustment state of this frequency adjustment part.And above-mentioned control loop is to have, and the noise of above-mentioned local oscillator is not subjected to the loop of the enough big loop band width of above-mentioned voltage-controlled oscillator noise effect.By means of this, high-frequency receiving device of the present invention can reach its intended purposes, promptly guarantee to improve the long-time stability of shock resistance and frequency of oscillation, tuning adjustment simultaneously is simple, and local oscillator can provide phase noise little clean output signal to frequency mixer.

The described invention high-frequency device of claim 1 of the present invention possesses: the input terminal of the high-frequency signal of input digit modulation, the input of one end by the signal of this input terminal provide, the frequency mixer of the output signal of input local oscillator and the lead-out terminal of the output signal of this frequency mixer is provided in the input of the other end simultaneously; Above-mentioned local oscillator comprises voltage-controlled oscillator and is in frequency divider, phase comparator, loop filter in the control loop of this voltage-controlled oscillator.Again, above-mentioned voltage-controlled oscillator has oscillating portion and tuning portion.And this tuning portion has frequency adjustment part and the means of keeping of keeping the adjustment state of this frequency adjustment part.And the noise that above-mentioned control loop has an above-mentioned local oscillator is not subjected to the enough big loop band width of the noise effect of above-mentioned voltage-controlled oscillator.

Thereby, adopt said structure, because the tuning portion of frequency adjustment part as voltage-controlled oscillator is set, thereby carry out tuning adjustment easily, and this adjusted state in frequency adjustment part kept by the means of keeping, therefore can fully guarantee shock resistance.

On the other hand, if use the means of keeping for the long-time stability of guaranteeing to improve shock resistance and frequency of oscillation, then since usually this to keep the permittivity ratio air that means have big, and form stray capacitance at tuning, therefore the dielectric loss that stray capacitance has takes place, so oscillating characteristic worsens.But the control loop of voltage-controlled oscillator is the loop of the very big loop band width of noise with local oscillator noise effect that is not subjected to above-mentioned voltage-controlled oscillator in the present invention.Therefore can correct the deterioration of oscillating characteristic with broadband, the result is that can make from local oscillator becomes the little clean output signal of phase noise to the output signal of frequency mixer output.

The described invention high-frequency device of claim 2 is a high-frequency device according to claim 1, frequency adjustment part in tuning is made of the conductive member of being arranged to movable state on substrate, to fix adjusted conductive member as the fixed component of keeping means; The conductive member that is set to movable state is being fixed securely with fixed component, so adjusted value can not change owing to vibrating or not accumulating all the year round.

The described invention of claim 3 is a high-frequency device according to claim 1, the inductance element that constitutes tuning portion uses the figure inductive circuit, but straight cutting setting moving-conductor near this figure inductive circuit, but this moving-conductor is moved with the adjustment tuned frequency, but be used as the fixing adjusted moving-conductor of fixed component of the means of keeping simultaneously; Partly with inductive graphization, to seek number of parts and assembling rationalization in man-hour, on the other hand, but adjust the tuning portion of local oscillator owing to can use moving-conductor, exist deviation or installation site to have deviation even constitute the value of the part of voltage-controlled oscillator, all input signals also can be received.But and by adjusting moving-conductor, make inductance value not owing to factors such as the movable long temperature cycles variation of conductor cause that its change of shape changes, but fixing adjusted moving-conductor with fixed component as keeping means simultaneously, so can access stable tuned frequency under the situation of temperature cycles variation for a long time.

The described invention of claim 4 is a high-frequency device according to claim 3, but moving-conductor is positioned at the top of the approximate centre of figure inductive circuit width, is provided with this figure inductive circuit almost parallel; So the little adjusting range of the degree of coupling is narrow, carry out finer adjustment easily.

The described invention of claim 5 is a high-frequency device according to claim 3, but the moving-conductor straight cutting be arranged near the open end of figure inductive circuit, therefore the degree of coupling changes greatly, can access bigger frequency of oscillation adjusting range.

The described invention of claim 6 is a high-frequency device according to claim 1, the inductance element that constitutes tuning portion has air core coil or dull and stereotyped lines, regulate this air core coil or dull and stereotyped lines to adjust inductance, fix adjusted state with fixed component as keeping means simultaneously; Because inductance element uses air core coil or dull and stereotyped lines, obtains big inductance easily, therefore can obtain the lower small-sized voltage-controlled oscillator of frequency ratio.

The described invention of claim 7 is a high-frequency device according to claim 1, and the frequency adjustment part is to use the volume core as keeping means, becomes coil to constitute at this volume core periphery coiled conductor; Owing on the volume core, twine coil,, the situation that the winding deformation inductance value changes can not take place yet even there is external force to be added on the coil as conductive member.

The described invention of claim 8 is a high-frequency device according to claim 1, the inductance element that constitutes tuning portion by form columnar insulator, be wrapped in this insulator periphery conductor, be located at the negative thread of cylindrical shape insulator inboard, and the peripheral movable core that is provided with the pin thread that cooperates this negative thread constitutes; By means of rotating this movable core, can change inductance value.Therefore adjust and realize automation easily.And because conductor is wrapped on the insulator, even external force in addition, also can not deform causes the situation that inductance value changes.And movable core also is fixed on the insulator by the frictional force of screw thread, and the movable core position of having adjusted can not change, and therefore can keep inductance value for a long time.

The described invention of claim 9 is a high-frequency device according to claim 1, constitute the inductance element of this tuning portion, be but that figure inductive circuit and moving-conductor are connected in series, be somebody's turn to do moving-conductor to adjust inductance value but adjust, fix adjusted moving-conductor but keep means with the fixed component conduct simultaneously; But the moving-conductor of the setting of connecting with the figure inductive circuit can reduce the substrate occupied area because inductance is shared, seeks miniaturization.

The described invention of claim 10 is a high-frequency device according to claim 1, constitute the inductance element of this tuning portion, use the figure inductive circuit, the adjustment part that is located on this figure inductive circuit is pruned, should pruning place be covered simultaneously with cladding material, the fine setting of figure inductive circuit is the adjustment on two dimension, adjusts easy automation and carries out.And, can keep adjusted value for a long time owing to cover this fine setting with cladding material and sentence and prevent its suction, chemical change such as oxidation takes place.

The described invention of claim 11 is a high-frequency device according to claim 10, but moving-conductor and figure inductive circuit are connected in series, and is somebody's turn to do moving-conductor but adjust, but fixes adjusted moving-conductor with fixed component as keeping means simultaneously; , therefore adjust easily, and can carry out correct adjustment because but the fine setting of figure inductive circuit and two frequency adjustment parts of adjustment of moving-conductor are arranged.

The described invention of claim 12 is a high-frequency device according to claim 1, local oscillator and frequency mixer are installed in the metal shell, simultaneously, the figure inductive circuit that constitutes on the substrate that is laid in of a part of tuning portion of above-mentioned local oscillator is arranged near metal shell or the metal division board; Because thereby metal shell or division board that have stable potential former because of ground connection etc. are not subjected to the influence of external signal nearby being provided with of figure inductive circuit, therefore can access stable frequency of oscillation.

The described invention of claim 13 is a high-frequency device according to claim 1, and the electric capacity of loop filter uses film capacitor; It is little that the pressure that this film capacitor produces in vibration is added in the electric capacitance change that the piezoelectric effect that produces on the capacitor causes, accesses stable performance with respect to vibrational energy, can access high performance voltage-controlled oscillator.

The described invention of claim 14 is a high-frequency device according to claim 13, film capacitor is installed in front one side of substrate, its lead inserts the through hole that is located on the aforesaid substrate, simultaneously the solderable conductor on the back side of this substrate one side and printed circuit pattern together, above-mentioned through hole is interior as non-electrode formation portion; Even one side is welded soldered lead at the back side of this substrate, the through hole that lead passes through does not form electrode yet, so non-heating distance that obtains surely greater than substrate thickness, owing to there is this non-heating distance, the root of the lead-in wire of the inaccessible back-side capacitors of scolder of fusion, film capacitor can not be damaged because of the melt solder heat.

The described invention of claim 15 is a high-frequency device according to claim 13, with division board isolated loop filter and voltage-controlled oscillator, having the opening of using by the conductor of printed circuit pattern continuous between above-mentioned loop filter and above-mentioned voltage-controlled oscillator on this division board simultaneously, nearby film capacitor is installed at this opening, is made it be covered with this opening; Current potential on the electrode of film capacitor is stable ground wire current potential, so opening shielded by film capacitor, and loop filter and voltage-controlled oscillator are isolated on electric, and part can access effective configuration simultaneously.

The described invention of claim 16 is a high-frequency device according to claim 1, and loop filter is made of two-staged transistor; By means of this two-staged transistor, can obtain suitable amplification with cheap price, can seek to obtain wide band loop filter.

The described invention of claim 17 is a high-frequency device according to claim 1, but the moving-conductor, variable capacitance diode and the figure inductive circuit that constitute tuning portion be connected in series successively, connect the figure inductive circuit in oscillating portion one side simultaneously; Because the figure inductive circuit with the inductance that is fixed on oscillating portion one side is set, can be owing to high frequency mode does not cause unsettled coupling, but adjust by carrying out from oscillating portion moving-conductor farthest, therefore adjust easily.And but variable capacitance diode is arranged between moving-conductor and the figure inductive circuit, but therefore can utilize variable capacitance diode and moving-conductor and obtain suitable surge frequency range, simultaneously owing to the tuning sensitivity value is not brought up to more than the desirable value, even therefore have noise to enter loop filter, also can suppress the increase of phase noise.

The described invention of claim 18 is a high-frequency device according to claim 1, and the place that constitutes the variable capacitance diode of tuning portion and the middle close described figure inductive circuit of line that the figure inductive circuit is connected in series is installed with the chip capacitor device of low capacity; The installation of this small-sized chip capacitor device has improved the impedance of circuit.This be for, even the length of variable capacitance diode lead-in wire because welding and in fact changing, also owing to adopt the chip capacitor device that impedance is increased, and reduces its influence.That is to say that variable capacitance diode weight ratio chip capacitor is thought highly of, and can not wish to have in reflow soldering the effect of automatic calibration, the positional precision variation on substrate comprises that the physical length of lead-in wire etc. produces deviation, and impedance is not a certain value.On the other hand, because the chip capacitor device is in light weight, the effect of automatic calibration is arranged in reflow soldering, its installation site is certain.Thereby the inductance value of figure inductive circuit is certain.Also have, though may there be deviation in the inductance between chip capacitor device and the variable capacitance diode, because the chip capacitor device forms high impedance, so the frequency of oscillation deviation of voltage-controlled oscillator is little.

The described invention of claim 19 is a high-frequency device according to claim 18, between variable capacitance diode that constitutes tuning portion and inductance, insert the 1st low capacity chip capacitor device, between above-mentioned variable capacitance diode and oscillating portion, insert the 2nd capacitor, above-mentioned the 1st capacitor and above-mentioned the 2nd capacitor serviceability temperature compensation condenser simultaneously; The 1st capacitor and two capacitors of the 2nd capacitor temperature compensation characteristic are separately made up,, formed the voltage-controlled oscillator more stable with respect to temperature to obtain more suitable temperature compensation characteristic.

The described invention of claim 20 is a high-frequency device according to claim 1, and the reference divider of input reference frequency signal is set, and the frequency dividing ratio of this frequency divider can be changed; Because the input reference frequency signal is set, and can changes the reference divider of frequency dividing ratio, so can not only keep high loop band width but also make the frequency dividing ratio of frequency divider of control loop littler, response speed can be improved, desired frequency tuning range can be accessed simultaneously.

The described invention of claim 21 is a high-frequency device according to claim 20, and the output frequency of voltage-controlled oscillator is high more, and the frequency dividing ratio of reference divider is more little; Owing to be the frequency dividing ratio of reference divider to be controlled with the frequency dividing ratio of the frequency divider of control loop according to the output frequency of voltage-controlled oscillator, can not be subjected to the frequency dividing ratio of output frequency domination reducing frequency divider, response characteristic is improved.

The described invention of claim 22 is a high-frequency device according to claim 1, be arranged in parallel a plurality of intermediate frequency tuned filters that have roll-off characteristic, have different frequency bandwidths simultaneously between frequency mixer and lead-out terminal, this intermediate frequency tuned filter can switch selectively according to the transmission rate of the signal of input terminal input; According to the difference of the frequency bandwidth of the high-frequency signal of input terminal input, can switch the tuning roll-off filter of intermediate frequency selectively, therefore, and even the different signal of transmission rate also can most suitably receive, the circuit before simultaneously can shared mixers.

The described invention of claim 23 is a high-frequency device according to claim 1, between input terminal and frequency mixer variable attenuator is set, and the control terminal of this variable attenuator of control is set; Owing to can therefore can carry out Optimal Control with the next signal controlling attenuation of this control terminal, the cross modulation of frequency mixer is not taken place.

The described invention of claim 24 is a high-frequency device according to claim 1, on lead-out terminal, connect the I/Q wave detector by the tuning surface wave filter of intermediate frequency, be provided with the 1st lead-out terminal of the I signal of this I/Q wave detector of output, export the 2nd lead-out terminal of the Q signal of above-mentioned I/Q wave detector, with the 2nd oscillator that oscillation frequency signal is provided to above-mentioned I/Q wave detector, the substrate that constitutes the substrate of surface resonator of above-mentioned the 2nd oscillator resonant structure and the tuning surface wave filter of above-mentioned intermediate frequency uses the substrate of same material, and the frequency error detector of the signal of above-mentioned the 1st lead-out terminal and above-mentioned the 2nd lead-out terminal output is set simultaneously.Right Hou is according to the output of this error detector data with forward-backward counter control frequency divider, makes the frequency of oscillation of the centre frequency of intermediate frequency and above-mentioned the 2nd oscillator roughly the same; Because the substrate that the surface resonator of the 2nd oscillator uses and the substrate of the tuning surface wave filter of intermediate frequency use the substrate of same material, even therefore because variations in temperature etc. cause that the frequency of the tuning surface wave filter of intermediate frequency changes, since the frequency of the 2nd oscillator also with the identical direction of above-mentioned variation on change identical frequency, change generally and cancel each other, just look like do not change like.

And by means of error detector, with forward-backward counter control frequency control data, make as the centre frequency of the intermediate frequency of the output of frequency mixer identically, make the centre frequency of the centre frequency of intermediate frequency and the tuning surface wave filter of intermediate frequency roughly the same with this with the frequency of oscillation of the 2nd oscillator.Therefore can eliminate the detection error, can use cheap baseplate material simultaneously, therefore can reduce price.

The described invention of claim 25 is a high-frequency device according to claim 24, the frequency bandwidth of the 3dB cut-off frequency of the tuning surface wave filter of intermediate frequency is in that (more than 0% of frequency bandwidth of シ Application ボ Le レ-ト) equate is below+5% with the symbol rate of received signal; Owing to realize this characteristic, this high-frequency device also has the effect that recovers the characteristic that transmitter side emphasizes concurrently.Thereby there is no need the additional special filter that recovers the characteristic that transmitter side emphasizes.

The described invention of claim 26 is a high-frequency device according to claim 1, between input terminal and frequency mixer, insert input filter, simultaneously, make the local oscillator vibration, it produces than 1/2nd of the difference of the peak frequency of the signal of above-mentioned input terminal input and minimum frequency big intermediate frequencies, the above-mentioned input filter fixed filters that above-mentioned minimum frequency is all passed through to peak frequency; Because the local oscillator vibration, it produces than 1/2nd of the difference of the peak frequency of the signal of input and minimum frequency big intermediate frequencies, so the image disruption frequency must be the high frequency higher than maximum receive frequency.And the filter that is connected in input terminal can use the fixed filters that minimum receive frequency is all passed through to maximum receive frequency.Thereby even use cheap fixed filters also not to be subjected to image disruption, and its structure is very simple.

The described invention of claim 27 is a high-frequency device according to claim 26, and the output signal frequency of frequency mixer is got about 612MHz; Because intermediate frequency is set on the frequency of empty channel of received signal, therefore can not be subjected to interference from input terminal.In addition, also can insert the trap circuit of about 612MHz in the input terminal back.

The described invention of claim 28 is a high-frequency device according to claim 1, setting is connected in I/Q on the lead-out terminal and extracts the 2nd lead-out terminal that the 1st lead-out terminal that I signal output that means, this I/Q extract means connected, Q signal output that above-mentioned I/Q extracts means are connected, connect demodulator on above-mentioned the 1st, the 2nd lead-out terminal, this demodulator is installed in the crown cap outside simultaneously; The integrated circuit part lid of no use of demodulator surrounds, so heat dispersion is good.Therefore this integrated circuit does not take place because the grade out of control misoperation that heat causes.And owing to can fully dispel the heat, the integrated level of integrated circuit can be done highly, can make the integrated circuit miniaturization.Consequently, can realize the miniaturization of high-frequency device.

The described invention of claim 29 is a high-frequency device according to claim 28, connects the positive Copper Foil that substrate, the Copper Foil that lays and the described substrate back that is laid in of the demodulator that integrated circuit constitutes are housed with through hole below described demodulator; Because the Copper Foil below the integrated circuit is being connected with through hole with the Copper Foil of substrate back, so the heat of integrated circuit can be delivered to following Copper Foil by through hole and distributes.

The described invention of claim 30 is a high-frequency device according to claim 28, the below of said integrated circuit that the substrate of the demodulator that constitutes with integrated circuit is installed be provided with chip component than this IC interior big, than this little hole, integrated circuit periphery; Owing to be than the peripheral little hole of integrated circuit, so the installation of integrated circuit uses general chip mounter device to install easily, simultaneously owing to top, followingly all directly contact the radiating efficiency height with air.

The described invention of claim 31 is a high-frequency device according to claim 29, the Copper Foil of substrate back of being laid in is provided with a plurality of long narrow square positions that do not form protecting film that are, and does not form the position molten solder material of protecting film and forms convex at this; Because following Copper Foil forms convex by scolder, therefore the contact area with air becomes big, and heat radiation is better.

The described invention of claim 32 is a high-frequency device according to claim 1, between input terminal and frequency mixer, filter is set, the Q signal that the 1st lead-out terminal that the I signal output that the I/Q that output the connected extraction means of the intermediate frequency tuned filter that setting simultaneously is connected with lead-out terminal, this intermediate frequency tuned filter, this I/Q extract means is connected and this I/Q extract means is exported the 2nd lead-out terminal that is connected, and these parts are placed in the same shield shell; Shield shell plays shielding action in very wide frequency band range, prevent that digital dock etc. from the outside is to the interference in the high-frequency device.

The described invention of claim 33 is a high-frequency device according to claim 32, at frequency mixer and be used for the barricade of configuration more than at least 1 between the oscillator that I/Q extracts means; Can reduce above-mentioned oscillator and frequency mixer be disturbed the distortion (spurious) that causes.

The described invention of claim 34 is a high-frequency device according to claim 32, with frequency mixer and the diagonal of oscillator configuration in same shield shell that is used for I/Q extraction means; Equally, can reduce above-mentioned oscillator and frequency mixer be disturbed the distortion that causes.

The described invention of claim 35 is a high-frequency device according to claim 32, on a longitudinal side of the shield shell that roughly is rectangle, input terminal is set, configuration input filter and above-mentioned frequency mixer link to each other with this input terminal, simultaneously, with above-mentioned input filter and above-mentioned frequency mixer almost parallel division board is set, the local oscillator of frequency of oscillation is provided to above-mentioned frequency mixer in the opposite side configuration across above-mentioned division board with respect to above-mentioned input filter and above-mentioned frequency mixer; Since the input of the digital signal used of channel selection be arranged at shield shell the input terminal side longitudinal side nearby and isolated, the digital signal that channel selection is used can not cause harmful effect to other compartments.

The described invention of claim 36 is a high-frequency device according to claim 33, and the compartment that the intermediate frequency tuned filter is installed is set between local oscillator that frequency of oscillation is provided to frequency mixer and I/Q extraction means; Because frequency mixer one side and I/Q wave detector one side are kept apart, therefore can realize non-interfering, good I/Q detection.

The described invention of claim 37 is a high-frequency device according to claim 35, and the control terminal of local oscillator and the lead-out terminal that I/Q extracts means are set near the 1st horizontal side plate of shield shell; Because each signal is arranged on the same direction of substrate-side, therefore wiring is convenient.

The described invention of claim 38 is a kind of high-frequency device, the input terminal that possesses the high-frequency signal input of digital modulation, the input of one end is provided, is imported simultaneously the frequency mixer of the output signal of local oscillator in the input of the other end by the input signal of this input terminal, and the lead-out terminal that the output signal of this frequency mixer is provided, above-mentioned local oscillator comprises voltage-controlled oscillator, be in frequency divider, phase comparator and loop filter in the control loop of this voltage-controlled oscillator.Again, above-mentioned voltage-controlled oscillator has oscillating portion and tuning portion, the means of keeping that this tuning portion has the frequency adjustment part and the adjustment state of this frequency adjustment part is maintained.And above-mentioned control loop adopts the noise that makes above-mentioned local oscillator not to be subjected to the enough big loop band width of above-mentioned voltage-controlled oscillator The noise, simultaneously, the reference frequency signal of above-mentioned phase comparator is provided, the comparison signal that offers comparator with frequency divider is compared, except its real centre frequency part, on same frequency, make its signal level smaller.Thereby, take said structure because the tuning portion of frequency adjustment part as voltage-controlled oscillator be set, therefore carry out tuningly easily, and, therefore can fully guarantee vibration-resistant property because the adjustment state of this frequency adjustment part is kept by the means of keeping.

On the other hand, in case for guaranteeing that vibration-resistant property uses the means of keeping, this common permittivity ratio air of material of keeping means is big, therefore forms stray capacitance, therefore dielectric losses takes place, thereby oscillating characteristic is worsened.But in the present invention, make the control loop of voltage-controlled oscillator take to make the noise of local oscillator not to be subjected to the enough big loop band width of the The noise of voltage-controlled oscillator, simultaneously, the reference frequency signal that offers phase comparator is compared with the comparison signal that frequency divider offers comparator, except its real centre frequency part, on same frequency, make its signal level smaller.Consequently, can on very wide band width, correct the deterioration of oscillating characteristic, therefore can make local oscillator become the still less clean signal of phase noise to the output signal of frequency mixer output.

The described invention of claim 75 is a kind of high-frequency device, the input terminal that possesses the high-frequency signal input of digital modulation, the input of one end is provided, is imported simultaneously the frequency mixer of the output signal of local oscillator in other end input by the input signal of this input terminal, and the lead-out terminal that the output signal of this frequency mixer is provided, above-mentioned local oscillator comprises voltage-controlled oscillator, be in frequency divider, phase comparator and loop filter in the control loop of this voltage-controlled oscillator.Again, above-mentioned voltage-controlled oscillator has oscillating portion and tuning portion, the means of keeping that this tuning portion has the frequency adjustment part and the adjustment state of this frequency adjustment part is maintained.And above-mentioned control loop adopts the noise that makes above-mentioned local oscillator not to be subjected to the enough big loop band width of above-mentioned voltage-controlled oscillator The noise, simultaneously, offer near the signal level of centre frequency of the reference frequency signal of above-mentioned phase comparator, outputing near the comparison of frequency distribution characteristic of the signal level the centre frequency of frequency mixer with above-mentioned local oscillator, except the real centre frequency part of this frequency distribution characteristic, make the signal level on the frequency that departs from same frequency from centre frequency lower than the signal level that high loop bandwidth can reduce noise.

Thereby, adopt said structure, because the tuning portion of frequency modulation(FM) portion as voltage-controlled oscillator is set, therefore carry out tuning adjustment easily, and owing to the adjustment state of this frequency adjustment part can enough means of keeping be kept, so can fully guarantee resistance to vibration.On the other hand, in case for guaranteeing that vibration-resistant property uses the means of keeping, this common permittivity ratio air of material of keeping means is big, therefore forms stray capacitance, thereby oscillating characteristic is worsened.

But in the present invention, make the control loop of voltage-controlled oscillator adopt the noise that makes local oscillator not to be subjected to the enough big loop band width of the The noise of voltage-controlled oscillator, the reference frequency signal that offers phase comparator is compared to the frequency distribution characteristic of the signal level of frequency mixer output with local oscillator, except the real centre frequency part of its frequency distribution characteristic, make this signal level on the frequency that departs from same frequency from centre frequency lower than the signal level that high loop bandwidth can reduce noise.Consequently, on reality is used, can on very wide band width, correct the noise of reference frequency signal, not reduce the local oscillator anti noise and do not damage high loop bandwidth with high loop bandwidth.Therefore can realize local oscillator cheaply, output signal can access the little clean signal of phase noise simultaneously.

Summary of drawings

Fig. 1 is the block diagram of the high-frequency device of the invention process form 1.

Fig. 2 (a) is the stereogram of the local oscillator of the same high-frequency device.

Fig. 2 (b) is the key component end view of the same high-frequency device

Fig. 3 (a) is the stereogram of local oscillator of other examples of the same high-frequency device.

Fig. 3 (b) is the key component end view of local oscillator of other examples of the same high-frequency device.

Fig. 4 is the block diagram of the high-frequency device of the invention process form 2.

Fig. 5 (a) is the front view of the 1st routine inductance of tuning use of the local oscillator of the same high-frequency device.

Fig. 5 (b) is the assembling stereogram of the 2nd routine inductance of tuning use of the local oscillator of the same high-frequency device.

Fig. 5 (c) is the stereogram of the 3rd routine inductance of tuning use of the local oscillator of the same high-frequency device.

Fig. 6 is the block diagram of the high-frequency device of the invention process form 3.

Fig. 7 (a) is the stereogram of the local oscillator of the same high-frequency device.

Fig. 7 (b) is the key component end view of adjustment part of the local oscillator of the same high-frequency device.

Fig. 7 (c) is the key component end view of adjustment part of the 2nd example of the local oscillator of the same high-frequency device.

Fig. 8 (a) is the stereogram of the local oscillator of the invention process form 4.

Fig. 8 (b) is the key component end view of the local oscillator adjustment part of the invention process form 4.

Fig. 8 (c) is the key component stereogram of the local oscillator adjustment part of the invention process form 4.

Fig. 8 (d) is the key component stereogram of adjustment part of the 2nd example of the local oscillator of the invention process form 4.

Fig. 9 (a) is the stereogram of the local oscillator of the invention process form 5.

Fig. 9 (b) but be the key component end view of the local oscillator moving-conductor of the invention process form 5.

Fig. 9 (c) is the key component plane graph of the adjustment part that forms of the figure inductance of the local oscillator of the invention process form 5.

Figure 10 is the block diagram of the high-frequency device of the invention process form 6.

Figure 11 is the 1st frequency characteristic figure of characteristic of local oscillator that is used to illustrate the high-frequency device of the invention process form 6.

Figure 12 (a) is the 2nd frequency characteristic figure of characteristic of local oscillator that is used to illustrate the high-frequency device of the invention process form 6.

Figure 12 (b) is the 3rd frequency characteristic figure of characteristic of local oscillator that is used to illustrate the high-frequency device of the invention process form 6.

Figure 13 is the more detailed block diagram of the high-frequency device of the invention process form 6.

Figure 14 (a) is the circuit diagram of voltage-controlled oscillator the 1st example of the high-frequency device of expression the invention process form 6.

Figure 14 (b) is the circuit diagram of voltage-controlled oscillator the 2nd example of the high-frequency device of expression the invention process form 6.

Figure 15 is the circuit diagram of loop filter of local oscillator of the high-frequency device of the invention process form 6.

Figure 16 (a) is the key component plane graph of voltage-controlled oscillator of the high-frequency device of the invention process form 6.

Figure 16 (b) is the key component end view of voltage-controlled oscillator of the high-frequency device of expression the invention process form 6.

Figure 17 is the block diagram of the high-frequency device of the invention process form 7.

Figure 18 is the block diagram of the high-frequency device of the invention process form 8.

Figure 19 (a) is the key component oscillogram of the high-frequency device of the invention process form 8.

Figure 19 (b) is the key component oscillogram of the high-frequency device of the invention process form 8.

Figure 19 (c) is the key component oscillogram of the high-frequency device of the invention process form 8.

Figure 19 (d) is the key component oscillogram of the high-frequency device of the invention process form 8.

Figure 20 is the block diagram of the high-frequency device of the invention process form 9.

Figure 21 is the stereogram of the 1st example of the high-frequency device of the invention process form 10.

Figure 22 is the stereogram of the 2nd example of the high-frequency device of the invention process form 10.

Figure 23 is the stereogram of the 3rd example of the high-frequency device of the invention process form 10.

Figure 24 (a) is the demodulator key component profile of the high-frequency device of the invention process form 10.

Figure 24 (b) is the key component plane graph of seeing from substrate back of demodulator of the high-frequency device of the invention process form 10.

Figure 25 is the stereogram of demodulator the 2nd example of the high-frequency device of the invention process form 10.

Figure 26 is that the part of high-frequency device the 4th example of the invention process form 10 is dissected end view.

Figure 27 is the block diagram of the high-frequency device of the invention process form 11.

Preferred forms of the present invention

Example 1

Below the invention process form 1 is described.

In Fig. 1, high-frequency device of the present invention is by the input terminal 101 of input high-frequency digital signal, be connected in the input circuit 102 of this input terminal 101, the input of one end is provided by the output of this input circuit 102, while connects the frequency mixer 104 as the output of the 1st oscillator 103 of local oscillator in the input of the other end, the filter 105 that is connected with the output of this frequency mixer 104, the I/Q wave detector 106 that is connected with the output of this filter 105, the 1st lead-out terminal 107 of the I signal output of this I/Q wave detector 106, the 2nd lead-out terminal 108 of the Q signal output of above-mentioned I/Q wave detector, the 2nd oscillator 109 of oscillation frequency signal is provided to above-mentioned I/Q wave detector 106, control the AFC control terminal 110 of the frequency of oscillation of the 2nd oscillator 109, the PLL portion (frequency divider and phase comparator) 111 that is connected with the output of above-mentioned the 1st oscillator 103, and the loop filter (calling low pass filter in the following text) 112 that is connected between the input of this PLL portion 111 and above-mentioned the 1st oscillator 103 constitutes.

Here, the 1st oscillator 103 is, the output of low pass filter 112 is connected in by the strip line on the substrate 115A that is laid in (example as the figure inductive circuit uses) 115 and constitutes in the input of the amplifier 128 that forms oscillator, and the tie point of low pass filter 112 and strip line 115 is connected in ground wire by variable capacitance diode 126.And the output of this amplifier 128 becomes the output of the 1st oscillator 103.Also have, the whole face in the back side of substrate 115A becomes ground wire figure 115B.

Again, but the moving-conductor 119 that constitutes the frequency adjustment part is put in the nearby straight straight cutting setting of above-mentioned strip line 115, but this moving-conductor 119 is moved adjustment, uses bonding agent (using as an example keeping means) 120 to be fixed simultaneously.Again, the output of oscillator 103 is connected on the frequency divider 118 of PLL portion 111.And the output of this frequency divider 118 is connected in an end of phase comparator 113, and the output of phase comparator 113 is connected in above-mentioned low pass filter 112.Again, reference oscillator 116 is connected in reference divider 117, and the output of this reference divider 117 is connected in the input of the other end of above-mentioned phase comparator 113.And above-mentioned frequency divider 118 and said reference frequency divider 117 be connected on control input end 114 together, can be with the signal change frequency dividing ratio of this control input end 114.

Here owing to set the reference frequency of input phase comparator 113 highly, the stepping quantitative change of frequency shift is big, therefore, for the stepping amount this frequency shift is set carefully, the modulus frequency divider that frequency divider 118 uses frequency dividing ratio to switch.

Action to high-frequency device with said structure describes below.High-frequency digital signal is from input terminal 101 inputs, and this signal is by input circuit 102 input mixers 104.The frequency of oscillation mixing with 103 outputs of the 1st oscillator here obtains intermediate-freuqncy signal.This intermediate-freuqncy signal is introduced filter 105, and right Hou obtains I signal and Q signal at the signal multiplication of I/Q wave detector 106 and the 2nd oscillator 109.The 2nd oscillator 109 is by AFC control terminal 110 its frequencies of oscillation of control.

At the 1st oscillator 103, variable capacitance diode 126 constitutes the capacitive component of variable tuning circuits, changes the capacitance of variable capacitance diode 126 from the control voltage of low pass filter 112, controls the frequency of oscillation of the 1st oscillator 103.This frequency of oscillation must be in the surge frequency range of 1430～2530MHz.In order to reach this requirement, adjust influence, so that can cover the four corner of the input signal of input terminal 101 inputs with the deviation (following abbreviation deviation) of the part constant of the electronic component that eliminate to constitute tuning circuit and installment state.Because inductance uses patterned strip line 115, and this part does not need to use inductance component, comprise that assembling man-hour can be more reasonable again.

Below to describing for eliminating the tuning circuit adjustment that this deviation effects carries out.But make moving-conductor near or away from strip line 115, with this inductance value of the equivalence of strip line 115 is changed.Can adjust the tuned frequency of the variable tuning circuit of oscillator 103 by means of the change of this inductance value.That is the influence that the deviation of the stray capacitance that produces for the deviation of the installation site of the deviation of eliminating the part constant that constitutes oscillator 103 and the parts installed etc. causes is adjusted to optimum value by means of the method that changes inductance value.

On the other hand, but must eliminate since moving-conductor 119 vibration or for a long time temperature cycles variation etc. cause that its change of shape causes inductance value to change.For this reason in the adjustment of eliminating deviation, but coating adhesive 120 is fixed on moving-conductor 119.Guarantee long-term dimensionally stable with this.

But bonding agent 120 produces more dielectric losses owing to the dielectric constant bigger than air increased stray capacitance, makes the Q value of tuning circuit of oscillator 103 descend.This causes the phase noise of oscillator 103 to increase.The increase of phase noise is the big problem of high-frequency device.

Therefore be necessary to make phase noise to be reduced to the degree that the unusual error rate does not take place in the digital signal reception.In order to address this problem, must improve the loop band width, reduce phase noise.The loop band width is approximately about 60Hz in the reception of the high-frequency signal of existing analog-modulated, and in the example of the present invention of the high-frequency signal that receives digital modulation with the loop band width setup about 7KHz, phase noise has improved about 40dB.Also have, phase comparison frequency in this case, the numerical value of Shi Yonging was about 3KHz in the past, and was about 360KHz in the present embodiment.Also have and fetch the situation of road bandwidth for about 10KHz, phase comparison frequency is approximately 500KHz in this case.

Fig. 2 (a) is the stereogram of details of the 1st oscillator 103 of presentation graphs 1.Fig. 2 (b) but be moving-conductor 119 end view of seeing from the AA direction nearby.But moving-conductor 119 is made of two legs 119a that is anti-" L " font and the main part 119b that is connected between the two legs in Fig. 2.Be disposed at the open end 115a of strip line 115 or the upper space of 115b side with the main part 119b of strip line 115 electromagnetic coupled, the position in the middle of being in roughly with respect to the Width of strip line 115, its angle configurations is and strip line 115 almost parallels.Dispose like this, can obtain the adjusting range of the frequency of oscillation about 100MHz.That is, owing to, can obtain bigger frequency of oscillation adjusting range at open end 115a or the 115b disposal subject 119b of portion.

But coating adhesive 120 so that the relative position of moving-conductor 119 and strip line 115 do not change.Seek stablizing with this with respect to variations such as long-time temperature cycles.Bonding agent 120 use solvent-borne type rubber are bonding agent in this example example.For example silicon system, epoxy system, phenolic aldehyde are bonding agent also can to use other.In this case for improving the bonding agent that operating efficiency preferably carries out cold(-)setting.

Also have, under the situation about the adjusting range of frequency of oscillation is narrow 30MHz, but as long as at the substantial middle 115c of strip line 115 straight cutting setting moving-conductor 119.Adjusting range narrows down in this case, but the effect of easy adjustment is arranged.

Fig. 3 (a) is the stereogram of other examples of details of the 1st oscillator 103 of presentation graphs 1.Fig. 3 (b) but be moving-conductor 149 end view of seeing from the AA direction nearby.In Fig. 3, but moving-conductor 149 is made of two legs 149a that is anti-" L " font and the main part 149b that is connected between the two legs.Be disposed at the open end 150a of strip line 150 or the upper space of 150b side with the main part 149b that is arranged at strip line 150 electromagnetic coupled on the substrate 150A, Width with respect to strip line 150 is in roughly central position, disposes with strip line 115 almost parallels.Configuration can obtain the frequency of oscillation adjusting range about 80MHz like this.That is, owing to, can obtain bigger frequency of oscillation adjusting range at open end 150a or the 150b side disposal subject 149b of portion.Strip line 150 forms " L " font continuously again.Therefore can dwindle the erection space on substrate 150A.In addition, form " S " font identical effect is also arranged.

Little under the situation of 20MHz in the frequency of oscillation adjusting range, but get final product at the 150c of substantial middle place of strip line 150 straight cutting setting moving-conductor 149.Because adjusting range is narrow and small, the effect of easy adjustment is arranged in this case.

Also identical in this example with above-mentioned example, but coating adhesive 120 is so that moving-conductor 149 is constant with the relative position of strip line.And formation earth connection figure 150B is gone up at whole of the back side of substrate 150A.

Example 2

Under situations such as frequency of oscillation is low, strip line 115 or 150 is used as inductance element, because volume is bigger, improper sometimes, for example the situation of vibrating under the frequency of VHF frequency band can use air core coil or dull and stereotyped lines to form tuning portion as inductance element.Be that the method for taking to change the Adjusting Shape inductance value of air core coil peace printed line bar solves for the deviation of frequency in this case.So Hou is the same with above-mentioned example fixes with bonding agent, and these air core coils or dull and stereotyped lines can be stablized under situations such as long temperature cycles variation.

Fig. 4 and Fig. 5 represent example 2.But Fig. 4 is strip line 115,150 moving-conductors 119,149 of Fig. 1, Fig. 2 or Fig. 3 and the example that bonding agent 120 is replaced into inductance element 121.

Fig. 5 (a) is an example of this inductance element 121.This inductance element 121 is a core with the insulator 122 that two ends have electrode 124, and winding around 123 constitutes on this insulator 122.Form groove 122a in a side opposite with electrode 124, pincet etc. is inserted among this groove 122a, the winding department that changes coil 123 is apart to adjust the value of inductance element 121.The coil 123 of inductance element 121 is owing to be wrapped on the insulator 122, makes it can be under the situation of not using bonding agent also can keep stable with respect to long temperature cycles variation etc. with the effect of the frictional force of insulator.That is to say that coil 123 has become the means of keeping with the frictional force of insulator 122 in this example.Even can not change shape and coil 123 is subjected to the effect of external force etc. yet.

But because insulator 122 has dielectric loss, the same with above-mentioned example, lower the phase noise that oscillator 103a produces with the method that improves the loop band width.Consequently, the phase comparison frequency of phase comparator 113 has also improved.The result that phase comparison frequency improves, make the frequency interval of receive frequency become big, this point is taked the coarse adjustment of receive frequency to be undertaken by PLL portion 111 and the 1st oscillator 103a and is finely tuned the method that the AFC control element 110 by the 2nd oscillator 109 of I/Q wave detector 106 carries out, and can obtain stable high-frequency device.

Fig. 5 (b) is another example of inductance element 121 shown in Figure 4.In Fig. 5 (b), the 171st, columnar insulator is provided with negative thread 172 on the through hole 171A at these insulator 171 centers wall.For guaranteeing intensity, also the bottom surface of through hole 171A can be sealed in this case.The 173rd, conductor is wrapped in the periphery of insulator 171.The periphery is a cylinder, but also is not limited thereto.The 174th, the mobile core that magnetic forms, its peripheral pin thread 175 that forms, this pin thread 175 cooperates with the negative thread 172 of above-mentioned through hole 171A.176 are provided in a side of the groove of mobile core 174 upper surfaces, and screwer etc. can insert this groove 176 these movable cores of rotation, with this make movable core 174 in insulator 171, in the drawings above-below direction moves slight distance.The 177th, the metallic shield housing covers on insulator 171 outsides.178 are provided in a side of the hole of metallic shield housing 177 upper surfaces, can rotate above-mentioned movable core 174 from the outside by this hole.Can also on the peripheral surface of insulator 171a, establish groove 179, twine above-mentioned conductor 173 at this groove 179.

Right Hou is rotated this movable core 174 to adjust inductance value.Be wrapped on the insulator 171 owing to conductor 173 in this case, even it is also indeformable to be subjected to external force.And because movable core 174 and insulator 171 with threaded engagement, utilize its frictional force (this frictional force becomes the means of keeping) to keep motionless, even do not use bonding agent also can keep the position of movable core 174 for a long time.This structure has the characteristics of easy realization automation owing to adjust inductance value with rotary movement.In addition, shown in Fig. 5 (c), insulator outer periphery groove 179, coiled conductor 173 in this groove 179 can make inductance more stable under the situation of vibration.

But because the result of the magnetic loss that dielectric loss that insulator 171 has and movable core 174 are had, the oscillating characteristic of tuning portion worsens, so the same with above-mentioned example, lower the phase noise that oscillator 103a produces with the method that improves the loop band width.Consequently, the phase comparison frequency of phase comparator 113 has also improved.

The result that phase comparison frequency improves, make the frequency interval of receive frequency become big, this point is taked the coarse adjustment of receive frequency to be undertaken by PLL portion 111 and the 1st oscillator 103a and is finely tuned the method that the AFC control element 110 by the 2nd oscillator 109 of I/Q wave detector 106 carries out, and can obtain stable high-frequency device.

Example 3

Example 3 as shown in Figure 6 and Figure 7, the 1st oscillator 103b of Fig. 7 presentation graphs 6.

The 1st oscillator 103b represented in Fig. 7 (a) summary, Fig. 7 (b) but be moving-conductor 125 end view of seeing from the BB direction nearby.But constitute inductance element by moving-conductor 125 and strip line 151, but the deviation etc. that constitutes the parts of the 1st oscillator 103b is eliminated with the method for adjusting moving-conductor 125.Right Hou is fixed with same method with bonding agent 120, makes it stable under situations such as vibration or temperature cycles variation.But since under this situation with 151 one-tenth configurations that are connected in series of 125 pairs of strip lines of moving-conductor, compare with the example of Fig. 1, but needn't be again near strip line 151 straight cutting setting moving-conductor, can reduce occupied area at substrate 151A, have the effect of miniaturization.

The shape of moving-conductor 125a shown in but moving-conductor 125 can use Fig. 7 (c) again.That is to say, but also can not make moving-conductor 125a pass substrate 151A, adjust, fix the position that it is roughly central authorities with bonding agent 120 simultaneously and pasting substrate 151A upper surface.

Example 4

Fig. 8 represents example 4.Fig. 8 (a) is the stereogram of other examples of expression the 1st oscillator.Additional 103c in this example.Fig. 8 (b) is its key position profile.And Fig. 8 (c) is the key position stereogram, and Fig. 8 (d) is the stereogram of other examples.

Among Fig. 8 (a), the 152nd, the strip line of the inductance of the tuning portion of formation.The projection 153 of adjusting usefulness is set in the side of this strip line 152.This projection 153 is the inductance value that are used to adjust strip line 152, shown in Fig. 8 (c), prunes to cut off by means of laser and adjusts inductance to setting.

At these section 154 coating materials 155.Be coated with this lining material 155 for following reason.At first be that oxidation takes place the section 154 that prevents projection 153.Next be with prevent the adjustment that comprises strip line 152 with projection 153 on the protecting film (not shown) of printing because the result that laser is pruned the carbonization cause or laser is pruned the carbonization that causes when using the thermosetting resin substrate 152A of phenolic aldehyde system is produced, carbide absorbs the purpose that is changed to of substrate dielectric constant that moisture causes.Use lining material 155 to keep the inductance value of having adjusted like this.

But, owing to use such lining material 155, promptly because the dielectric loss that lining material 155 is had causes the Q value of tuning portion to descend, so lower the phase noise that oscillator 103c produces with the method for the frequency bandwidth that improves control loop.

Also have, tuning as Fig. 8 (d) shown in, strip line 156 also can cut into concavity 157 with the laser pruning.These sections 154 of pruning with laser form matsurface 158 shown in Fig. 8 (b), coating material 155 also is effective for protection the concavo-convex of this matsurface 158.

Example 5

In example 5, Fig. 9 also represents the other example of the 1st oscillator 103d.Fig. 9 is its stereogram.In Fig. 9, the 159th, be arranged at the strip line that substrate 159A goes up, forms local oscillator tuning portion simultaneously.The 160th, but be connected in series in the moving-conductor of this strip line 159.And 161 are the adjustment parts that protrude from above-mentioned strip line 159 sides.159B is the earth connection figure.

Method of adjustment to tuning portion with said structure describes below.At first, shown in Fig. 9 (c), prune adjustment part 161 rough cuts, carry out the coarse adjustment of inductance by means of laser.But then carry out the fine setting of inductance with moving-conductor 160.Right Hou is 161 coating materials 155 in the adjustment part, absorb moisture to prevent the carbide that after adjustment section generation oxidation or substrate, protective layer carbonization produce.But moving-conductor 160 applied bonding agents 120 change to prevent adjusted value.

As mentioned above, in this example example 5, but, adjust and carry out easily, can carry out correct adjustment simultaneously because adjustment part 161 coarse adjustment of carrying out and the fine setting that moving-conductor 160 carries out are arranged.

In example 4,5, the pruning with laser is illustrated, but also can adopts machining such as boring to carry out.Equipment investment is rationalized.

Example 6

201 is input terminal in Figure 10, and the high-frequency signal of digital modulation is imported this input terminal 201.Connecting high pass filter 202, amplifier 203A, variable attenuator 204, amplifier 203B, tuned filter 205 on this input terminal 201, the output of this tuned filter 205 provides the end input of frequency mixer 206.Provide the output signal of the voltage-controlled oscillator 208 of local oscillator 207 to the input of the other end of this frequency mixer, the output of frequency mixer 206 offers amplifier 210 by the lead-out terminal 209 of frequency mixer 206.The outlet side of the voltage-controlled oscillator 208 of local oscillator 207 is connecting frequency divider 211, phase comparator 212 and loop filter 213, and the output of loop filter 213 is provided for the input and the tuned filter 205 of voltage-controlled oscillator 208.Offer phase comparator 212 as reference signal behind signal process frequency divider 215 frequency divisions from quartz vibrator 214.

Also have, the square frame A that the division board 216 shown in the dotted line separates, B, C, D, E constitute tuning portion, and the lead-out terminal 217 as tuner is set among the square frame E.Above-mentioned amplifier 210 and intermediate frequency tuned filter 218, amplifier 219, variable attenuator 220, amplifier 221 are set in the inside of square frame E.

Square frame F is the I/Q detection section, connects I/Q detection section 222 on the lead-out terminal 217 of tuning portion, draws the lead-out terminal 223 of output I signal and the lead-out terminal 224 of output Q signal from I/Q detection section 222.On I/Q wave detector 222, connect voltage-controlled oscillator 225 again, and frequency control voltage (AFC) is offered above-mentioned voltage-controlled oscillator 225.

In addition, square frame G is provided for providing the gain control circuit (AGC) 226 of control voltage to tuning part, and provides automatic gain control (AGC) signal to give above-mentioned gain control circuit 226.Be arranged at outdoor low-noise converter (LNB) and provide voltage to outdoor antenna part by input terminal 201.Like this from the shared input terminal of the voltage supply terminal 201 inputs signal of 1～2GHz frequency band for example.

In this example example, the independent output signal frequency distribution character of voltage-controlled oscillator 208 is shown in the H line of Figure 11, and demonstrating with respect to desirable centre frequency I (for example 1.8GHz) has the very big distribution character that departs from state up and down.With its correct for similar in appearance to the frequency distribution characteristic shown in the J curve be exactly frequency divider 211, the phase comparator 212 that is connected in this voltage control oscillating circuit 208, and the control loop that constitutes of loop filter 213 and frequency divider 215 and the quartz vibrator 214 that is connected in phase comparator 212.

At first, in this example example, in order to improve response characteristic, the frequency dividing ratio of frequency divider 211 is reduced (for example about 4000～7000).On the other hand, improve the reference signal (for example 360kHz) that frequency divider 215 offers phase comparator 212.

Voltage-controlled oscillator 208 independent noise components are removed by above-mentioned control loop, with this draw desirable, to the frequency distribution characteristic that the J curve is similar, noise component is few of Figure 11.

For the effect of loop band width is described, use Figure 12 (a) to describe here.In this case, if the loop band width of above-mentioned control loop is narrow, then shown in the curve K of Figure 12 (a), in the descending grade part of its curve, voltage-controlled oscillator 208 independent frequency distribution characteristic curve H do not obtain correcting, and obtain unfavorable distribution character.That is to say that at Figure 12 (a), L represents the narrow situation of loop band width of control loop, for example 5kHz.In this case, can correct from centre frequency I, but surpass the loop band width that this scope then surpasses control loop, therefore keep the original appearance of H curve, can not correct at all to the frequency that departs from 5kHz up and down.

On the other hand, M represents the big situation of loop band width of control loop, for example supposes that M is 7kHz, can correct from centre frequency I to the frequency that departs from 7kHz up and down, and the result is that the zone of K curve also can concentrate on centre frequency I as the J curve very much.Consequently, the noise scope till the M has reduced than the noise scope at L.

Therefore, the present invention makes the loop band width of this control loop enough big, the feasible noise effect that is not subjected to voltage-controlled oscillator 208, the M value of Figure 11, Figure 12 (a) is got about 7kHz, the result is, obtain concentrating on very much centre frequency I, even and the big desirable output signal that not influenced by it of the noise of voltage-controlled oscillator 208 as the J curve.Because this signal is provided for frequency mixer 206, so tuning and I/Q detection is normally carried out.Because the frequency dividing ratio of frequency divider 211 obtains for a short time, so the response performance of channel switching etc. is high again.

Influence to phase noise is illustrated with regard to reference frequency signal with Figure 12 (b) below.Problem is, offer phase comparator 212 reference frequency signal, the size of its signal level on the same frequency except its real centre frequency.

That is to say, under signal (being the comparison signal that frequency divider 211 the offers phase comparator 212) situation that level is high (the N curve of Figure 12 (b)) of the voltage-controlled oscillator 208 before the level ratio of reference frequency is corrected with the loop band width, or near the signal level the centre frequency of reference frequency signal with compare near the frequency distribution characteristic of the signal level of local oscillator 207 centre frequency of frequency mixer 206 output, the signal level of the off-center frequency same frequency the centre frequency real except it is than under should be with the signal level of the high loop band width rectification high situation (the O curve of Figure 12 (b)), even improve the loop band width, and the noise of the reference frequency signal of object is still bigger as a comparison, make and to surpass the rectification of this level by control loop (for example for the O curve of Figure 12 (b) of the latter, the oblique line part of high P curve can not be corrected.And, then can not correct fully) for the former N curve.

Otherwise, if select better than the spectral purity of the voltage-controlled oscillator 208 before correcting with the loop band width at least, and do not damage the reference frequency signal oscillation source (for example Q curve of Figure 12 (b)) of level of the rectification effect of high loop band width, then can obtain the rectification effect of high loop band width more economically.

Also have, 227 of Figure 10 is the controllers that carry out channel switching etc., and its signal offers frequency divider 211,215 by microcomputer 228.

Figure 13 represents the details of square frame C, D part.Voltage-controlled oscillator 208 is by being the oscillating portion at center with transistor 229, and is located at tuning the formation that strip line 230 on the substrate and variable capacitance diode 231,231a form.Figure 14 (a) expresses it to such an extent that understand easily.In Figure 14 (a), 232,233,234 for applying the resistance of voltage, and 235,236,237 is biasing resistor, 238,239 capacitors of using for temperature-compensating, the 240th, feedback capacity, the 241,242, the 243rd, ground capacity, the 244th, output capacitance.The 245th, the inductance that impedance matching is used forms with figure on substrate.Again, the 261st, but the moving-conductor that the inductance of the tuning portion of adjustment is used was narrated at example 3 and example 5.And 262 be bonding agent equally, but be used for fixing described moving-conductor 261 so that the inductance value stable for extended periods of time.

Return Figure 13, loop filter 213 is made of capacitor 246,247, transistor 248,249 etc., and its details is shown in Figure 15.The signal that is phase comparator 212 is sent to lead-out terminal 251 from input terminal 250 inputs after the amplifier that the Darlington (Darlington) of process transistor 248,249 connects and composes amplifies.Its part feeds back to transistor 248 by resistance 252, electric capacity 247, carries out filtering with this.

In Figure 15,253 is capacitor, and 255,256,257 is resistance.Capacitor 246,247 considers that resistance to vibration uses thin-film capacitor.That is to say,, then, become noise, phase noise is worse off because the piezoelectric effect of vibration produces unnecessary voltage if these electric capacity use ceramic condenser.Therefore use the little thin-film capacitor that has lead-in wire of piezoelectric effect.

Again, the electric capacity 246 of Figure 13 is thin-film capacitors, is sizable electric capacity.So, utilize this situation, opening is set on the division board between square frame C, the D 216 circuit 258 that connects electric capacity 246 and strip line 230 is passed through, and in square frame D one side, near electric capacity 246 these openings of covering.This is the few as far as possible measure of taking by this opening transfer of noise in order to make square frame C, D.

Also have, capacitor 246,247 non-refractories that constitute by thin-film capacitor, thereby, when these capacitors 246,247 are installed on substrate, behind the through hole with its this substrate of lead-in wire insertion, rear side and conductor fig at this substrate weld together, but do not establish electrode in this through hole, and this point is very important.This is in order to prevent that scolding tin from entering in this through hole, and its heat passes to capacitor 246,247 easily.

And nearby strip line 230 is set at the wall of this C metal shell 259 shown in Figure 13 or division board 216 is to make noise enter the measure of this strip line 230 less.At Figure 13, another one transistor 260 is used for signal and amplifies.

In Figure 14 (a), the chip capacitor device 238 of low capacity (several picofarads～tens of picofarads) is installed, between strip line 230 and variable capacitance diode 231a to improve the impedance of circuit.This is shown in Figure 16 (a) and Figure 16 (b), even in fact the length of the lead-in wire of variable capacitance diode 231a etc. change owing to reasons such as welding, uses chip capacitor to improve the measure of impedance to reduce to influence.

That is to say that variable capacitance diode 231a can not expect to have self-regulating effect than chip capacitor 238 weights in reflow soldering.Therefore, the physical length of lead-in wire has deviation, and resistance value is not a certain value.Because chip capacitor 238 is in light weight, self-regulating effect is arranged in reflow soldering on the other hand, its installation site is certain.Thereby the inductance value of strip line 230 is a certain value.In addition, the inductance between chip capacitor 238 and the variable capacitance diode 231a may have deviation, and owing to there being chip capacitor 238 to become high impedance, because this measure, the deviation of frequency of oscillation has reduced.

And for example shown in Figure 14 (a), together as temperature compensating capacitor, precise dose compensation characteristic more can be realized to this chip capacitor 238 and chip capacitor 239, the voltage-controlled oscillator stable can be obtained with respect to variations in temperature with this.

Figure 14 (b) be do not need to be used to reduce Figure 14 (a) strip line 230 peripheries deviation chip capacitor 238 and also can access the example of good tuning portion.In Figure 14 (b), the input terminal 263 of vibration frequency control voltage is connected in the cathode side of variable capacitance diode 231 by resistance 232, simultaneously with anode-side ground connection.Moving-conductor 261, variable capacitance diode 231a and strip line 230 but right Hou is connected in series between the transistor 229 of the tie point of described resistance 232 and variable capacitance diode 231 and oscillating portion successively, the while, above-mentioned strip line 230 1 sides were connected in transistor 229 1 sides.But moving-conductor 261 is the inductance about 6nH here, and strip line 230 is 4～6mm with length, and the printed circuit pattern that width is about 1mm forms.

But here hypothesis moving-conductor 261 and strip line 230 both be disposed between two negative electrodes of variable capacitance diode 231 and variable capacitance diode 231a, this situation is discussed below.Between variable capacitance diode 231 and variable capacitance diode 231a, because but both stray capacitances of moving-conductor 261 and strip line 230 are arranged, compare with the situation of two negative electrodes that just are connected variable capacitance diode 231 and variable capacitance diode 231a, being in proportion of its frequency tuning range and described stray capacitance becomes big.Certainly be necessary to expand to desirable scope in this case, if but the characteristic frequency expanded range is to more than the desirable scope, then the problem of Chan Shenging is that tuning sensitivity is (with respect to the volume change of variable capacitance diode 231a, the degree that tuned frequency changes) becomes greatly, therefore enter at noise that consequent voltage makes the frequency of voltage-controlled oscillator that bigger variation take place under the situation of loop filter 213, therefore increase phase noise.Thereby exist the optimum value of the stray capacitance between variable capacitance diode 231 and the 231a.

On the other hand,, but reduce the stray electrical capacity of moving-conductor 261 and strip line 230, then will reduce surface area separately respectively if want to obtain this optimum value.Consequently, because the table skin effect causes loss to increase, resistance increases, and the Q value descends, and phase noise is bigger.Therefore the capacitance that is necessary to guarantee each stray capacitance is more than certain value, and it also is limited therefore reducing tuning sensitivity.

The result obviously is, is optimum value in order to ensure the stray capacitance between variable capacitance diode 231 and the 231a, but must move on in moving-conductor 261 and the strip line 230 any one between the transistor 229 of variable capacitance diode 231a and oscillating portion.And in this case, but important be not to move moving-conductor 261, but mobile strip line 230.That is to say, adopt such structure,, can not produce the instability coupling that the high order harmonic component pattern causes, adjust easily owing to the strip line 230 that has fixed inductance in the transistor 229 1 side settings of oscillating portion.If but moving-conductor 261 is arranged at transistor 229 1 sides, then because but moving-conductor 261 is approaching with transistor 229, so, can not obtain stable vibration because but the relation that moving-conductor 261 will be adjusted can produce the instability coupling that the high order harmonic component pattern causes.

According to top described this example that comes back to, but for example have the variable capacitance amount be about 1pF～15pF variable capacitance diode 231a, strip line 230, adjust under the situation of element of moving-conductor 261 of usefulness, if only but moving-conductor 261 is disposed between the negative electrode of variable capacitance diode 231 and 231a, then in can guaranteeing appropriate tuning scope (surge frequency range of 1330MHz～2700MHz), tuning sensitivity is further descended.In this case, but but do not cut off moving-conductor 261 and strip line 230 with minimum element owing between moving-conductor 261 and strip line 230, dispose variable capacitance diode, so the installation effectiveness height, and take into account the tuning of assurance input signal and reduce phase noise two aspects.

Below high loop band broadening is illustrated.In Figure 10, the frequency dividing ratio of the signal from quartz (controlled) oscillator 214 being carried out the frequency divider 215 of frequency division is reduced, can improve comparison frequency with this, high loop band broadening can be realized with low frequency division in the loop.It is big that but the interval of channel selection becomes, and it is big that the deviation of the channel selection of receiving channels becomes.Therefore make the frequency dividing ratio of frequency divider 215 change about 10%～20% method by different channel, can revise and make deviation reduce to minimum, and can guarantee the desirable tuning high loop band broadening that realizes simultaneously.

That is to say, with F _XCOThe expression local oscillation frequency is represented the counting of basic counter of 2 modulus types of 64/65 frequency division with N, represent to gulp down the counting of digit counter (swallow counter), X with A _TalThe expression reference signal frequency, the frequency dividing ratio so that R represents reference divider then obtains formula (1).

F _VCO＝(64×N+A)×(X _tal/R) ……(1)

If F _VCO=1800MHz, X _Tal=16MHz, R=32, at this moment (N, A)=(56,16).Also can only be even improve A with the step-size change of 16/32=0.5MHz.If but R=33, (N A)=(58,1), then obtains formula (2), can finely tune with the step-length of 0.24MHz, can finely tune when keeping high loop bandwidth.

F _VCO＝(64×58+1)×(16/33)＝1800.24 ……(2)

Again, the output frequency of voltage-controlled oscillator 208 is high more, and the FREQUENCY CONTROL sensitivity of voltage-controlled oscillator 208 is low more, and the effect that high loop bandwidth improves output frequency phase noise nearby is more little.Therefore, output frequency is high more, reduces the frequency dividing ratio of reference divider, takes high loop bandwidth to improve phase noise.

As an example, for example get low frequency F _VCO1=1488MHz, high frequency F _VCO2During=2500MHz, the frequency dividing ratio of reference divider is respectively R1=45, and R2=32 calculates with formula (1), then obtains the result of formula (3), (4).

1488＝(64×65+25)×(16/45) ……(3)

2500＝(64×78+8)×(16/32) ……(4)

Carrying out output frequency with above-mentioned relational expression sets.Promptly at low frequency F _VCO1The time be set in the comparison frequency of 16/45=0.35MHz, at high frequency F _VCO2The time be set in the comparison frequency of 16/32=0.5Mhz, realize high loop bandwidth.

Below variable attenuator 204,220 is illustrated.At Figure 10, Figure 13, both supply control voltage to AGC226 to variable attenuator 204,220 respectively.The variable attenuator 204 of prime changes incoming levels, the cross modulation when being controlled at many signals of highfield that frequency mixer 206 takes place.And overall gain is adjusted with variable attenuator 220, and its actuating range is got more than the 50dB.Realize wide input range with this.

Example 7

Below the intermediate frequency tuned filter with roll-off characteristic is illustrated.Figure 17 represents other examples of the E part of Figure 10, Figure 13.303 and 304 is diverter switches, the 301, the 302nd, have intermediate frequency tuned filter roll-off characteristic, that the different frequency bands width is arranged.According to the switching signal 305 that the outside is come, diverter switch 303 and 304 interlocks switch, and intermediate-freuqncy signal is selectively by intermediate frequency tuned filter 301 or 302.With this, even under the different situation of the frequency bandwidth of the high-frequency signal that causes reception owing to transmission rate, also can realize optimum reception.

Example 8

Below example 8 of the present invention is described.In Figure 18, high-frequency device of the present invention has the input terminal 401 of input high-frequency digital signal, be connected in the input filter 402 of this input terminal 401, the output of this input filter 402 offers the one end and imports the frequency mixer 404 that is connecting 403 outputs of first oscillator in the input of its other end of while, obtain the tuning surface wave filter 405 of intermediate frequency of the output of this frequency mixer 404, the I/Q wave detector 406 that is connected with the output of the tuning surface wave filter 405 of this intermediate frequency, the control terminal 407 of incoming frequency control data, be connected in the PLL portion 409 of this control terminal 407 by forward-backward counter 408, this PLL portion 409 is connected with another output of described the 1st oscillator 403, and simultaneously is being connected loop filter (calling low pass filter in the following text) 410 between the input of the output of this PLL portion 409 and described the 1st oscillator 403.

Again, described I/Q wave detector 406,2 distributors 411 that output connected with the tuning surface wave filter 405 of described intermediate frequency, be connected in the 1st wave detector 412 that the one end is imported with the end output of this 2 distributor 411, connecting the output of the 2nd oscillator 413 in the other end input of the 1st wave detector 412, the I signal output of while as the output of the 1st wave detector 412 is connected on the 1st lead-out terminal 414.

Again, another output of above-mentioned 2 distributors 411 is connected in another inputs of the 2nd wave detector 415, the 2 wave detectors 415 in the one end input and is connecting 90 degree phasers 416, is connecting the 2nd oscillator 413 in the input of this 90 degree phaser 416 simultaneously.

And the output of the Q signal of described the 2nd wave detector 415 is connected on the 2nd lead-out terminal 417.And the 2nd oscillator 413 constitutes oscillator by means of the resonant element that uses surface resonator 418, and the substrate of the substrate of described surface resonator 418 and the tuning surface wave filter 405 of described intermediate frequency uses the substrate of same material.And I signal output is connected in forward-backward counter 408 with the frequency error detector 419 that Q signal output is connected.

Action to high-frequency digital signal receiving system with said structure describes below.The frequency of oscillation of the 1st oscillator 403 is by the control data decision of the above-mentioned control terminal 407 of initial input.The intermediate-freuqncy signal 456 that obtains thus is shown in Figure 19.Here intermediate-freuqncy signal 456 is with f ₀Be the center.Owing to adopt identical baseplate material, so the centre frequency f of the tuning surface wave filter 405 of intermediate frequency that causes such as exterior temperature change ₀With described the 2nd frequency of oscillation f ₀Variation be f ₀About+α.If it is 456 constant that intermediate-freuqncy signal still keeps, owing to the centre frequency of the tuning surface wave filter 405 of intermediate frequency is subjected to the influence of variations in temperature etc. that f is arranged ₀Variation about+α, so the symmetry of the baseband signal 458 of the baseband signal 457 of I signal output and Q signal output is damaged.The frequency band of the baseband signal of Q signal output in this case narrows down, and produces the detection error.

Therefore control above-mentioned the 1st oscillator 403 according to the frequency error of such baseband signal with above-mentioned forward-backward counter, make intermediate-freuqncy signal as Figure 19 (d) 459 shown in become f ₀+ α.Consequently, the baseband signal 460 of I signal output does not all produce the detection error owing to balance with the baseband signal 461 of Q signal output.Also have, fix at frequency bandwidth the 3dB cut-off frequency of the tuning surface wave filter 405 of intermediate frequency the frequency bandwidth that equates with the symbol rate of received signal-more than 0%, under the situation below+5%, the needed roll-off filter of next stage of the 1st lead-out terminal 414 and the 2nd lead-out terminal 417 just can not wanted.That is to say, can make the tuning surface wave filter 405 of intermediate frequency also have the function of roll-off filter.

That is, shown in Figure 19 (b), make the tuning surface wave filter 405 of intermediate frequency frequency bandwidth characteristics reduction 3dB frequency bandwidth the frequency bandwidth that equates with the symbol rate of received signal-more than 0%, below+5% scope in.So, the 3dB cut-off frequency of the baseband signal 460 of I signal output and the baseband signal 461 of Q signal output respectively 1/2 frequency bandwidth of symbol rate-more than 0%, below+5% scope in.

That is to say that the function of roll-off filter can realize under the precision below+5% with the tuning surface wave filter 405 of intermediate frequency more than-0%.Therefore, the next stage at the 1st lead-out terminal 414 and the 2nd lead-out terminal 417 needn't increase roll-off filter newly.Thereby, adopt this example example owing to needn't increase the function of roll-off filter newly, can realize the high-frequency device of low price.

Example 9

Below the invention process form 9 is illustrated.Figure 20 is the block diagram of the high-frequency device of the invention process form 9.In Figure 20, the 501st, input terminal, device is by the fixedly input filter 502 that is connected on this input terminal 501, be connected in this fixedly the 1st gain-controlled amplifier 504 of the output of input filter 502, be connected in the gain controlling terminal 503 in the gain controlling input of described the 1st gain-controlled amplifier 504, the output of described the 1st gain-controlled amplifier 504 is connected in the frequency mixer 505 in the input of one end, the output of one end offers the 1st oscillator 506 of another input of this frequency mixer 505, the PLL control part 508 that another output of the 1st oscillator 506 is connected, be connected in the loop filter (calling low pass filter in the following text) 509 between the input of the output of this PLL control part 508 and above-mentioned the 1st oscillator 506, be connected in the control terminal 507 on the frequency data input terminal of above-mentioned PLL control part 508, the 2nd gain-controlled amplifier 510 that output connected of above-mentioned frequency mixer 505, the gain controlling input of the 2nd gain-controlled amplifier 510 is connected in above-mentioned gain controlling terminal 503, the intermediate frequency tuned filter 511 that output connected of the 2nd gain-controlled amplifier 510 simultaneously, the I/Q wave detector 519 that output connected of this intermediate frequency tuned filter 511, the 1st lead-out terminal 517 that the Q signal output of this I/Q wave detector 519 is connected, and the 2nd lead-out terminal 518 that the output of the I signal of above-mentioned I/Q wave detector 519 is connected constitutes.

The structure of this I/Q wave detector 519 is as follows.2 distributors 512 that output connected that promptly comprise the tuning surface wave filter 511 of above-mentioned intermediate frequency, the one end output of this 2 distributor 512 is connected in the 1st wave detector 513 of one end input, be connected in 90 degree phasers 514 in the other end input of the 1st wave detector 513, be connected in the 2nd oscillator 515 in the input on this 90 degree phaser 514, the other end output of above-mentioned 2 distributors 512 is connected in the 2nd wave detector 516 in the input of one end, the other end input of the 2nd wave detector 516 is gone up and is connected the 2nd oscillator 515, and the output of the 2nd wave detector 516 links to each other with the 2nd lead-out terminal 518.

Again, the output of above-mentioned the 1st wave detector 513 is connected in the 1st lead-out terminal 517.And the frequency of above-mentioned the 1st oscillator 506 is, its middle frequency ratio of importing above-mentioned tuned filter 511 is imported difference 1/2 big of the peak frequency of signal of above-mentioned input terminal 501 and minimum frequency.

Action to high-frequency device with said structure is illustrated below.The supposition intermediate frequency is IF now, and the peak frequency of above-mentioned input terminal input is RFmax, and minimum frequency is RFmin.If Im is the image disruption frequency of last heterodyne mode, and Im＞RFmax, then the image disruption frequency can not be imported the input terminal 501 of high-frequency device.

On the other hand, because Im=RF+2 * IF, the frequency when Im is minimum frequency is RFmin+2 * IF.Be RFmin+2 * IF＞RFmax, this formula is changed form obtains following formula.

IF＞(RFmax-RFmin)/2

Thereby, if the 1st oscillator 506 its frequencies of oscillation can access than 1/2 of the difference of the peak frequency RFmax of the signal of the described input terminal 501 of input and minimum frequency RFmin big medium-frequency IF, even then image disruption frequency IF imports described input terminal 501, also, can not pass through described intermediate frequency tuned filter 511 by means of described fixedly input filter 502 owing to bigger than RFmax.

In this example example, because RFmax=550MHz, RFmin=50MHz, medium-frequency IF is set in (550-50)/more than the 2=250MHz, even image disruption frequency Im imports described input terminal 501, because the effect of described fixedly input filter 502 can not be from described intermediate frequency tuned filter 511 outputs.

Now, in the dropping signal of many CATV, the 612MHz frequency band becomes the empty channel that is not used in the signal transmission.Therefore, in an example of this example 1, above-mentioned 612MHz is set in the intermediate frequency of high-frequency device.

And as other example, having for the 612MHz frequency band under the situation of direct interference, in order to prevent this situation, at the said fixing input filter 502 additional trap circuits that are used for the 612MHz band attenuation.

Therefore, by accessing, just do not need to be used to remove the filter of image disruption frequency than 1/2 of the difference of the peak frequency RFmax of the signal of input terminal 501 input and minimum frequency Rfmin big medium-frequency IF.That is, as long as configuration only makes frequency (the simple fixedly input filter 502 of RFmax～RFmin) pass through of above-mentioned input terminal 501 inputs.

Again, said fixing input filter 502 does not allow the following frequency of minimum frequency RFmin pass through, and therefore is not subjected to the interference of the rising signals of CATV.Thereby can provide the high-frequency device of simple control mode.

Also have, the high-frequency device of example 5 is installed in same shield shell, can prevent to shake influence this high-frequency device.

Example 10

In Figure 21, the 601st, the cuboid can constitutes so-called tuning portion.On a side of this can 601, input terminal 602 is set, lead-out terminal 603 is set in the another side.Right Hou is equipped with in this can 601, and above-mentioned input terminal 602 obtains input signal, obtains the frequency mixer of the output of local oscillator simultaneously in another input, and the I/Q that is arranged between this frequency mixer and the above-mentioned lead-out terminal 603 extracts means.The 604th, can 601 is installed on the pin that main substrate is used.And 605 are the input/output terminal subgroups that are arranged on the length direction on the plane with maximum area of can 601, are connected in frequency mixer, local oscillator, I/Q extraction means etc.Here the implication that so-called I/Q extracts means is meant among both of I/Q wave detector and A/D converter at least a.

The 606th, substrate is loading the demodulator 607 of the demodulation section of being made up of integrated circuit at this 606 substrate surface.And the input of this demodulator 607 is connected on the input terminal 608 of substrate 606, is connected with above-mentioned lead-out terminal 603 with connector.609 are provided in a side of the input/output terminal subgroup on the substrate 606, are connected in demodulator 607, are located at simultaneously on the length direction of substrate 606.

610 are provided in a side of the connecting elements of input terminal 608 1 sides of substrate 606, and this connecting elements 610 is connected on the side of lead-out terminal 603 1 sides of above-mentioned can 601.Here, substrate 606 covers without can.That is the demodulator 607 that is loaded on this substrate 606 directly contacts extraneous air.This is to consume the heat that reaches the high-power generation about 2 watts in order to distribute this demodulator 607.

And input subgroup 605,609 is located at a side of maximum area in this example example, thereby can horizontally be installed on main substrate, main substrate thickness is reduced and realizes thin type structure.Also can be different therewith, as shown in figure 22, input/output terminal subgroup 605,609 is set on the side of the length direction adjacent with a side of above-mentioned maximum area, implement so-called vertical installation, the erection space that is installed on the main substrate is reduced.

And for example shown in Figure 23, also can be made in substrate in the can 601 and the substrate 619 that demodulator 607 is installed on the substrate.

Figure 24 (a) is the key component profile that the substrate 606 of demodulator 607 is installed.Copper Foil 611 is laid in bottom at the demodulator 607 of substrate 606 upper surfaces, and it was contacted with the following of above-mentioned demodulator 607.And Copper Foil 612 is also laid at the back side of substrate 606, with a plurality of through holes 613 it is connected with above-mentioned Copper Foil 611.Arrive Copper Foil 611 with this heat transferred that demodulator 607 is produced, simultaneously by Copper Foil 612 heat radiations of through hole 613 from substrate 606 back sides one side.

Figure 24 (b) is the key component plane graph of seeing from substrate 606 back sides.At Figure 24 (b), printing diaphragm 614 on Copper Foil 612, the part of not printing diaphragm 614 615 of many strips of formation.Do not form the scolding tin 616 of the convex of burn-oning on the diaphragm part 615, can dispel the heat better by means of this scolding tin 616.Above-mentioned through hole 613 is located on the diaphragm 614 of printing.This through hole 613 being located on the diaphragm 614 of printing is to cause faults such as short circuit in order not make scolding tin 616 flow to demodulator 607 1 sides.Again, the width of the diaphragm 614 that prints between the 1st of these scolding tin 616 of setting the and the 2nd about equally.This width is got 1 millimeter in this example example.And the diameter of through hole 613 is 0.5 millimeter, and 15 through holes are concentrated the bottom that is arranged on demodulator 607 centers.

Figure 25 is provided with the setting that hole 618 replaces through hole below the described demodulator 607 of the substrate 617 that demodulator 607 is installed.This hole 618 is bigger than the chip size of demodulator 607, and is littler than its profile.This hole 618 can be square, also can be circular, makes the big hole 618 of trying one's best and help most dispelling the heat in than the little 0.5 millimeter scope of the profile of demodulator 607.Above said 0.5 millimeter be even how many installation sites of considering demodulator 607 has some deviations also to want to install and fixed.

Figure 26 is the situation of configured in parallel the 1st substrate 621 and the 2nd substrate 622 in the box 620 of high-frequency device is installed.Tuning portion is installed on the 1st substrate 621, on the 2nd substrate 622 demodulation section is installed.Installation is optimum to tuning the parts installation with demodulation section like this, and can connect with the shortest distance, so can seek to realize the miniaturization of high-frequency device.

Example 11

Figure 27 is the block diagram of each piece floor plan of the high-frequency device of the invention process form 11.

In Figure 27, the 701st, input terminal, device is by the fixedly input filter 702 that is connected on this input terminal 701, be connected in this fixedly the 1st gain-controlled amplifier 704 of the output of input filter 702, be connected in the gain controlling terminal 703 in the gain controlling input of described the 1st gain-controlled amplifier 704, the frequency mixer 705 that in the output of described the 1st gain-controlled amplifier 704, connects the input of one end, the output of one end is connected in another the 1st oscillator 706 of importing of this frequency mixer 705, the PLL control part 708 that another output of the 1st oscillator 506 is connected, be connected in the loop filter (calling low pass filter in the following text) 709 between the input of the output of this PLL control part 708 and above-mentioned the 1st oscillator 706, be connected in the control terminal 707 on the frequency data input terminal of above-mentioned PLL control part 708, the 2nd gain-controlled amplifier 710 that output connected of above-mentioned frequency mixer 705, the gain controlling input of the 2nd gain-controlled amplifier 710 is connected in above-mentioned gain controlling terminal 703, the intermediate frequency tuned filter 711 that output connected of the 2nd gain-controlled amplifier 710 simultaneously, the I/Q wave detector 719 that output connected of this intermediate frequency tuned filter 711, the 1st lead-out terminal 717 that the Q signal output of this I/Q wave detector 719 is connected, and the 2nd lead-out terminal 718 that the output of the I signal of above-mentioned I/Q wave detector 719 is connected constitutes.

And the structure of this I/Q wave detector 719 is as follows.The other end output that the end output that promptly comprises 2 distributors 712 that output connected, this 2 distributor 712 of above-mentioned intermediate frequency tuned filter 711 is connected in the 1st wave detector 713 in the input of one end, be connected in 90-degree phase shifter 714 in the other end input of the 1st wave detector 713, be connected in the 2nd oscillator 715 in the input of this 90-degree phase shifter 714, above-mentioned 2 distributors 712 is connected in the 2nd wave detector 716 in the input of one end, connect described the 2nd oscillator 715 in the other end input of the 2nd wave detector 716, its output simultaneously is connected in the 2nd lead-out terminal 718.And the output of above-mentioned the 1st wave detector 713 is connected in the 1st lead-out terminal 717.And these parts are installed in the same shielding box 740.

Configuration to each parts of installation in this metallic shield box 740 is illustrated below.The parallelogram that shielding box 740 is the 2nd horizontal side plates 742 of be arrangeding in parallel by the 1st horizontal side plate 741, with the 1st horizontal side plate 741, constitute with these horizontal side plate 741,742 vertically disposed the 1st longitudinal side plates 743 and the 2nd longitudinal side plate 744.Set gradually the metal division board abreast with longitudinal side plate 743,744 again, be followed successively by the 1st division board the 745, the 2nd division board the 746, the 3rd division board 747 from the 1st longitudinal side plate 743.

With the 1st horizontal side plate 741 the 4th division board 748 is set abreast again,, is communicated with the 1st division board 745 to the 2nd division boards 746, form each compartment respectively from the 1st longitudinal side plate 743.

In the compartment 749 that division board 745, division board 748 and horizontal side plate 742 separate, be provided with: be located at input terminal 701 on the longitudinal side plate 743, fixedly input filter 702 and the 1st gain-controlled amplifier 704.In the compartment 750 that division board 745, division board 746 and horizontal side plate 742 separate, frequency mixer 705 is installed.In the compartment 751 that division board 745, division board 746 and horizontal side plate 741 separate, oscillator 706 is installed.In the compartment 752 that division board 748, division board 745 and horizontal side plate 741 separate, PLL control part 708 and low pass filter 709 are installed, gain controlling terminal 703 and control terminal 707 are installed on horizontal side plate 741 simultaneously, in the compartment 753 that division board 746, division board 747 separate, horizontal side plate 742 1 sides are equipped with the 2nd gain-controlled amplifier 710, in horizontal side plate 741 1 sides intermediate frequency tuned filter 711 are installed.

Again, in the compartment 754 that division board 747, horizontal side plate 741,742, longitudinal side plate 744 separate, I/Q wave detector 719 is installed, the 1st lead-out terminal 717 and the 2nd lead-out terminal 718 are installed on longitudinal side plate 744 simultaneously.Equate that from the length of the 1st wave detector 713 to the 1st lead-out terminals 717 this is in order to keep the symmetry of I/Q detection output with making from the length of the 2nd wave detector 716 to the 2nd lead-out terminals 718.

Also have, also can the 1st lead-out terminal 717 and the 2nd lead-out terminal 718 be set on horizontal side plate 741 in the symmetric while that keeps I/Q detection output.In this case, make horizontal side plate 741 1 sides down, shielding box 740 is vertically mounted on the main substrate, then signal is arranged on the same direction of main substrate one side, and therefore wiring is convenient.And the gain controlling terminal 703 that is connected in the 2nd gain-controlled amplifier 710 also can be arranged on horizontal side plate 741 1 sides of compartment 753.The number of gain controlling terminal 703 becomes many in this case, but can not be subjected to the The noise of compartment 749 and compartment 750.Again because shielding box 740 horizontal being installed on the main substrate, with respect to the good stability of vibration effect, so particularly require this high-frequency device with respect to vibration-stable situation under, preferably with its horizontal being installed on the main substrate.

In a word, being separated into compartment according to frequency of utilization, function like this is very important as installing as described in the present embodiment.Particularly division board 746 and division board 747 are according to circumstances preferably made and are two-layerly isolated completely.

Here function and the frequency to each compartment describes.Compartment 749 has the filter 702 and the 1st gain-controlled amplifier 704 of the input signal of 50MHz～550MHz, and the interference that is not subjected to external signal is very important.Compartment is the frequency mixer that incoming frequency is transformed to the intermediate frequency of 612MHz for 750 li, does not allow this signal leakage be very important to the outside.The reason that is decided to be the frequency band of 612MHz about intermediate frequency is narrated at example 9.Produce the variable frequency of about 662MHz～1162MHz at compartment 751, do not allow the signal leakage be very important to the outside.

Produce the digital signal that channel selections are used at compartment 752, manage not allow this digital signal leak into outside and compartment 749 is very important.Compartment 753 is places that intermediate frequency 612MHz frequency band high accuracy is amplified, and must do one's utmost to reduce the intrusion of external interference signals.That is must install division board 746, division board 747 to such an extent that have a more intact branch separating performance.Compartment 754 is I/Q wave detectors, obtains the frequency band of detection output signal frequency from intermediate frequency 612MHz frequency band., must prevent the intrusion of extraneous signal here, reduce the detection error.Dispose each compartment like this, above-mentioned the 1st oscillator 706 and above-mentioned the 2nd oscillator 715 usefulness division boards 746 and division board 747 are isolated, and are disposed on the diagonal.The action specification of high-frequency device with said structure is as follows.

Fixedly input filter 702 removal 50MHz～550MHz unwanted signal in addition of the high-frequency digital signal of the 50MHz～550MHz of input terminal 701 inputs.Right Hou with frequency mixer 705 and the frequency mixing that obtains from oscillator 706, obtains the intermediate frequency of 612MHz frequency band after amplifying with the 1st gain-controlled amplifier 704.This intermediate frequency amplifies the back through the 2nd gain-controlled amplifier 710 and is merely able to obtain intermediate frequency 612MHz frequency band by intermediate frequency tuned filter 711.Right Hou is carried out detection with I/Q wave detector 719, and I signal output is from 718 outputs of the 2nd lead-out terminal, simultaneously from the 717 output Q signal outputs of the 1st lead-out terminal.Right Hou I signal output, Q signal output are handled by the digital signal demodulator with digital dock pulse signal.

As mentioned above, when adopting this example example, the high-frequency device of this example example is installed in the above-mentioned shielding box 740, because the shield effectiveness that this shielding box 740 is possessed can prevent the interference of digital dock pulse signal to this high-frequency device.

Other effects also have, the distortion that causes for the mutual interference mutually that reduces above-mentioned the 1st oscillator 706 and above-mentioned the 2nd oscillator 715, with division board 746 and division board 747 above-mentioned the 1st oscillator 706 and above-mentioned the 2nd oscillator 715 are kept apart, and it is disposed on the diagonal, reduces the distortion that above-mentioned the 1st oscillator 706 and the mutual interference mutually of above-mentioned the 2nd oscillator 715 cause with this.

In addition, separate compartment 752, the digital signal that has the channel selection of making to use is not again disturbed the effect of other compartments.

Compartment 753 also is set, owing to can separate above-mentioned the 1st oscillator 706 and above-mentioned the 2nd oscillator 715, so the effect that reduces the distortion that above-mentioned the 1st oscillator 706 and the mutual interference mutually of above-mentioned the 2nd oscillator 715 cause is also arranged.

Effect in addition also has, in the symmetric while that keeps I/Q detection output, the 1st lead-out terminal 717 and the 2nd lead-out terminal 718 are set on horizontal side plate 741, make horizontal side plate 741 1 sides down, shielding box 740 is vertically mounted on the main substrate, then signal is arranged on the same direction of main substrate one side, and therefore wiring is convenient.

Industrial applicability

As mentioned above, adopt the present invention, possess the input terminal of the high-frequency signal input of digital tuning, an end Input is believed by the output that the signal of this input terminal input provides, simultaneously its other end input obtains local oscillator Number frequency mixer, and the lead-out terminal that the output signal of this frequency mixer is provided, above-mentioned local oscillator comprises: The piezoelectricity control generator, be in frequency divider in the control loop of this piezoelectricity control generator, phase comparator with And loop filter. And above-mentioned voltage control damping swings utensil oscillating portion and tuning section arranged, and this tuning section has frequency Adjustment part and keep the means of keeping of the state after this frequency adjustment part adjustment. Also have, above-mentioned control loop has Make the noise of above-mentioned local oscillator not be subjected to enough big returning of impact of the noise of above-mentioned voltage-controlled oscillator The high-frequency device of road bandwidth.

Thereby, take said structure, owing to the frequency adjustment part is set as the tuning section of voltage-controlled oscillator, Carry out easily tuning adjustment, and because the state after means are kept this frequency adjustment part adjustment, institute are kept in use Having resistance to vibration, thereby can guarantee for a long time the stability of frequency of oscillation. On the other hand, in case for guaranteeing Resistance to vibrations etc. and use this to keep means then because its permittivity ratio air is big, form stray capacitance, thus The dielectric losses that causes causes that oscillating characteristic worsens. But make in the present invention the control of voltage-controlled oscillator The loop has the big foot that gets the impact of the noise that is not subjected to voltage-controlled oscillator of the noise that makes above-mentioned local oscillator Enough big loop bandwidths have solved this problem, can correct oscillating characteristic in the frequency bandwidth of broadness thus Deterioration, consequently, it is little that the output signal that outputs to frequency mixer from local oscillator can obtain phase noise Clean signal.

Claims (111)

1. high-frequency device, possess: the input terminal of the high-frequency signal of input digit modulation, the input of one end is by the input signal of this input terminal provides, simultaneously the input of the other end obtains the output signal of local oscillator frequency mixer, lead-out terminal with the output signal that this frequency mixer is provided, it is characterized in that

Above-mentioned local oscillator comprises voltage-controlled oscillator and is in frequency divider, phase comparator, loop filter in the control loop of this voltage-controlled oscillator; Above-mentioned voltage-controlled oscillator has oscillating portion and tuning portion; This tuning portion has the frequency adjustment part and keeps the means of keeping of the adjustment state of this frequency adjustment part;

Above-mentioned control loop has the enough big loop band width that the noise that makes above-mentioned local oscillator is not subjected to the noise effect of above-mentioned voltage-controlled oscillator.

2. high-frequency device according to claim 1 is characterized in that the frequency adjustment part has the conductive member of being arranged to movable state on substrate, and the means of keeping are used fixed component, and described conductive member is fixed with described fixed component.

3. high-frequency device according to claim 1, it is characterized in that, the inductance element that constitutes tuning portion uses the figure inductive circuit, but nearby dispose moving-conductor at this figure inductive circuit, but this moving-conductor is moved to adjust, fix adjusted moving-conductor but be used as the fixed component of keeping the means use simultaneously.

4. high-frequency device according to claim 3 is characterized in that, but moving-conductor be positioned on the position at center of top, line width of figure inductive circuit, be provided with this figure inductive circuit almost parallel.

5. high-frequency device according to claim 3 is characterized in that, movable conductor arrangement is near the open end of figure inductive circuit.

6. high-frequency device according to claim 1, it is characterized in that, straight cutting is provided with air core coil or dull and stereotyped lines as the inductance element that constitutes tuning portion, regulates this air core coil or dull and stereotyped lines, fixes described air core coil or dull and stereotyped lines with fixed component as keeping means simultaneously.

7. high-frequency device according to claim 1 is characterized in that, the frequency adjustment part is to use the volume core as keeping means, constitutes at described volume core periphery coiled conductor simultaneously.

8. high-frequency device according to claim 1, it is characterized in that the inductance element that constitutes tuning portion is by forming columnar insulator, being wrapped in the conductor of this insulator periphery, the negative thread that is located at described cylindrical shape insulator medial surface and the peripheral movable core that is provided with the pin thread that cooperates this negative thread and constituting.

9. high-frequency device according to claim 1, it is characterized in that, constitute the inductance element of tuning portion, be but that an end of figure inductive circuit and an end of moving-conductor are connected in series, but adjust described moving-conductor, keep means with the fixed component conduct simultaneously, but fix described moving-conductor with described fixed component.

10. high-frequency device according to claim 1 is characterized in that, the inductance element that constitutes tuning portion uses the figure inductive circuit, and the adjustment part that is located on this figure inductive circuit is pruned, and should pruning place be covered with cladding material simultaneously.

11. high-frequency device according to claim 10 is characterized in that, but an end of figure inductive circuit and an end of moving-conductor are connected in series, and is somebody's turn to do moving-conductor but adjust, but fixes described moving-conductor with fixed component as keeping means simultaneously.

12. high-frequency device according to claim 1, it is characterized in that, local oscillator and frequency mixer are installed in the metal shell, simultaneously, the figure inductive circuit on the substrate that is laid in of the part of the tuning portion that constitutes above-mentioned local oscillator is arranged at metal shell or perpendicular to the metal of substrate near plate.

13. high-frequency device according to claim 1 is characterized in that, the electric capacity of loop filter uses film capacitor.

14. high-frequency device according to claim 13, it is characterized in that, film capacitor is installed in front one side of substrate, the lead-in wire of described film capacitor inserts the through hole that is located on the aforesaid substrate, in the back side of this substrate one side described lead-in wire and conductor fig are welded together simultaneously, above-mentioned through hole is interior as non-electrode formation portion.

15. high-frequency device according to claim 13, it is characterized in that, with division board local oscillator and loop filter are separated, having the opening of using by the conductor of conductor fig continuous between above-mentioned loop filter and above-mentioned local oscillator on this division board simultaneously, nearby described film capacitor is installed at this opening, is covered this opening with described film capacitor.

16. high-frequency device according to claim 1 is characterized in that loop filter is made of two-staged transistor.

17. high-frequency device according to claim 1 is characterized in that, but tuning portion has moving-conductor, but described moving-conductor, variable capacitance diode and figure inductive circuit be connected in series successively, simultaneously connect described figure inductive circuit in oscillating portion one side.

18. high-frequency device according to claim 1, it is characterized in that, tuning portion has variable capacitance diode and figure inductive circuit, described variable capacitance diode and figure inductive circuit are connected in series by low capacity chip capacitor device, and described low capacity chip capacitor device is installed near described figure inductive circuit.

19. high-frequency device according to claim 18, it is characterized in that, between variable capacitance diode and inductance, insert low capacity chip capacitor device as the 1st capacitor, between above-mentioned variable capacitance diode and oscillating portion, insert the 2nd capacitor, above-mentioned the 1st capacitor and above-mentioned the 2nd capacitor serviceability temperature compensation condenser simultaneously.

20. high-frequency device according to claim 1 is characterized in that, on the phase comparator of input reference frequency signal reference divider is set, and the frequency dividing ratio of this frequency divider can be changed.

21. high-frequency device according to claim 20 is characterized in that, the output frequency of voltage-controlled oscillator is high more, and the frequency dividing ratio of reference divider is more little.

22. high-frequency device according to claim 1, it is characterized in that, be arranged in parallel a plurality of intermediate frequency tuned filters that have roll-off characteristic, have different frequency bandwidths simultaneously between frequency mixer and lead-out terminal, this intermediate frequency tuned filter can switch selectively according to the transmission rate of the signal of input terminal input.

23. high-frequency device according to claim 1 is characterized in that, between input terminal and frequency mixer variable attenuator is set, and the control terminal of this variable attenuator of control is set.

24. high-frequency device according to claim 1, it is characterized in that, on lead-out terminal, connect the I/Q wave detector by the tuning surface wave filter of intermediate frequency, be provided with the 1st lead-out terminal of the I signal of this I/Q wave detector of output, export the 2nd lead-out terminal of the Q signal of above-mentioned I/Q wave detector, with the 2nd oscillator that oscillation frequency signal is provided to above-mentioned I/Q wave detector, described the 2nd oscillator has resonant structure, the substrate that constitutes the substrate of surface resonator of above-mentioned resonant structure and the tuning surface wave filter of above-mentioned intermediate frequency uses the substrate of same material, the frequency error detector of the frequency error of the signal that detects above-mentioned the 1st lead-out terminal and the output of above-mentioned the 2nd lead-out terminal is set simultaneously, according to the output of this error detector data, make the frequency of oscillation of the centre frequency of intermediate frequency and above-mentioned the 2nd oscillator roughly the same with forward-backward counter control frequency divider.

25. high-frequency device according to claim 24 is characterized in that, with the frequency bandwidth of the 3dB cut-off frequency of the tuning surface wave filter of intermediate frequency definition at more than 0% of frequency bandwidth that equates with the symbol rate of received signal, below+5%.

26. high-frequency device according to claim 1, it is characterized in that, between input terminal and frequency mixer, insert input filter, simultaneously, make the local oscillator vibration, it produces than 1/2nd of the difference of the peak frequency of the signal of above-mentioned input terminal input and minimum frequency big intermediate frequencies, the above-mentioned input filter fixed filters that above-mentioned minimum frequency is all passed through to peak frequency.

27. high-frequency device according to claim 26 is characterized in that, the output signal frequency of frequency mixer is got about 612MHz.

28. high-frequency device according to claim 1, it is characterized in that, setting is connected in I/Q on the lead-out terminal and extracts the 2nd lead-out terminal that the 1st lead-out terminal that I signal output that means, this I/Q extract means connected, Q signal output that above-mentioned I/Q extracts means are connected, connect demodulator on above-mentioned the 1st, the 2nd lead-out terminal, this demodulator is installed in the crown cap outside simultaneously.

29. high-frequency device according to claim 28, it is characterized in that, connect the positive Copper Foil that lays on the substrate of the demodulator that integrated circuit constitutes, the described substrate front side below described demodulator and the Copper Foil of the described substrate back that is laid in of being equipped with through hole.

30. high-frequency device according to claim 28, it is characterized in that, on the described substrate below the said integrated circuit of the substrate that the demodulator that constitutes with integrated circuit is housed, be provided with chip component than this IC interior big, than this little hole, integrated circuit periphery.

31. high-frequency device according to claim 29 is characterized in that, the Copper Foil of the substrate back that is laid in is provided with a plurality of long narrow square positions that do not form protecting film that are, and does not form the position molten solder material of protecting film and forms convex at this.

32. high-frequency device according to claim 1, it is characterized in that, between input terminal and frequency mixer, input filter is set, the Q signal that the 1st lead-out terminal that the I signal output that the I/Q that output the connected extraction means of the intermediate frequency tuned filter that setting simultaneously is connected with lead-out terminal, this intermediate frequency tuned filter, this I/Q extract means is connected and this I/Q extract means is exported the 2nd lead-out terminal that is connected, and these parts are installed in the same shield shell.

33. high-frequency device according to claim 32 is characterized in that, at frequency mixer and be used for the barricade of configuration more than at least 1 between the oscillator that I/Q extracts means.

34. high-frequency device according to claim 32 is characterized in that, frequency mixer is placed in the same shield shell with being used for the oscillator that I/Q extracts means, simultaneously described frequency mixer be used for I/Q and extract the oscillator configuration of means at diagonal.

35. high-frequency device according to claim 32, it is characterized in that, on a longitudinal side of the shield shell that roughly is rectangle, input terminal is set, configuration input filter and above-mentioned frequency mixer link to each other with this input terminal, simultaneously, with above-mentioned input filter and above-mentioned frequency mixer almost parallel division board is set, the local oscillator of frequency of oscillation is provided to above-mentioned frequency mixer in the opposite side configuration across above-mentioned division board with respect to above-mentioned input filter and above-mentioned frequency mixer.

36. high-frequency device according to claim 33 is characterized in that, the compartment that the intermediate frequency tuned filter is installed is set between local oscillator that frequency of oscillation is provided to frequency mixer and I/Q extraction means.

37. high-frequency device according to claim 35 is characterized in that, the control terminal of local oscillator and the lead-out terminal that I/Q extracts means are set near the 1st horizontal side plate of shield shell.

38. high-frequency device according to claim 1 is characterized in that, simultaneously, the reference frequency signal of above-mentioned phase comparator is provided, the comparison signal that offers comparator with frequency divider is compared, and except its real centre frequency part, makes its signal level smaller on same frequency.

39., it is characterized in that the frequency adjustment part has with removable state and is arranged at conductive member on the substrate according to the described high-frequency device of claim 38, the means of keeping are used fixed component, above-mentioned conductive member is fixed with described fixed component.

40. according to the described high-frequency device of claim 38, it is characterized in that, the inductance element that constitutes tuning portion uses the figure inductive circuit, but nearby dispose moving-conductor at this figure inductive circuit, but this moving-conductor is moved to adjust, adjusted moving-conductor is fixed but use the fixed component conduct to keep means simultaneously.

41. according to the described high-frequency device of claim 40, it is characterized in that, but moving-conductor is in the position at center of top, the line width of figure inductive circuit, is provided with this figure inductive circuit almost parallel.

42., it is characterized in that movable conductor arrangement is near the open end of figure inductive circuit according to the described high-frequency device of claim 40.

43. according to the described high-frequency device of claim 38, it is characterized in that, straight cutting is provided with air core coil or dull and stereotyped circuit as the inductance element that constitutes tuning portion, adjusts this air core coil or dull and stereotyped circuit, fixes described air core coil or dull and stereotyped circuit with fixed component as keeping means simultaneously.

44., it is characterized in that the frequency adjustment part uses the periphery of volume core as keeping means according to the described high-frequency device of claim 38, the peripheral coiled conductor at described volume core constitutes simultaneously.

45. according to the described high-frequency device of claim 38, it is characterized in that, the inductance element that constitutes tuning portion is made of the movable core that cylindrical circular insulator, the peripheral wound conductor at this insulator, the negative thread that is located at described columnar insulator inner surface and its periphery are provided with this negative thread mating male threads.

46. according to the described high-frequency device of claim 38, it is characterized in that, constitute the inductance element of tuning portion, be but that an end of figure inductive circuit and an end of moving-conductor are connected in series, but described moving-conductor is adjusted, use the fixed component conduct to keep means simultaneously, but with the fixing described moving-conductor of described fixed component.

47., it is characterized in that according to the described high-frequency device of claim 38, constitute the inductance element of tuning portion, be to use the figure inductive circuit, the adjustment part that is arranged on this figure inductive circuit is pruned, cover this pruning place with lining material simultaneously.

48. according to the described high-frequency device of claim 47, it is characterized in that, but an end of figure inductive circuit and an end of moving-conductor are connected in series, but this moving-conductor is adjusted, use the fixed component conduct to keep means simultaneously, but with the fixing described moving-conductor of described fixed component.

49. according to the described high-frequency device of claim 38, it is characterized in that, local oscillator and frequency mixer are placed in the metal shell, will constitute simultaneously that figure inductive circuit on the substrate that is laid in of a part of tuning portion of described local oscillator is arranged at described metal shell or perpendicular near the metal division board of substrate.

50., it is characterized in that the capacitor of loop filter uses film capacitor according to the described high-frequency device of claim 38.

51. according to the described high-frequency device of claim 50, it is characterized in that, film capacitor is installed in front one side of substrate, the lead-in wire of described film capacitor inserts and is located in the through hole of described substrate, in this substrate back one side conductor fig and described lead-in wire are welded simultaneously, described through hole is interior as non-electrode formation portion.

52. according to the described high-frequency device of claim 50, it is characterized in that, separate loop filter and local oscillator with division board, on this division board, offer simultaneously the opening that the conductor fig that connects described loop filter and described local oscillator passes through, nearby described film capacitor is installed at this opening, is covered this opening with this film capacitor.

53., it is characterized in that loop filter is made of two-staged transistor according to the described high-frequency device of claim 38.

54. according to the described high-frequency device of claim 38, it is characterized in that, but tuning portion has moving-conductor, but described moving-conductor, variable capacitance diode, figure inductive circuit be connected in series successively, described figure inductive circuit is connected in oscillating portion one side simultaneously.

55. according to the described high-frequency device of claim 38, it is characterized in that, tuning portion has variable capacitance diode and figure inductive circuit, described variable capacitance diode and figure inductive circuit are connected in series by the low capacity chip capacitor, and described low capacity chip capacitor is installed near described figure inductive circuit.

56. according to the described high-frequency device of claim 55, it is characterized in that, between variable capacitance diode and inductance, insert the low capacity chip capacitor as the 1st capacitor, between described variable capacitance diode and oscillating portion, insert the 2nd capacitor, described the 1st capacitor and described the 2nd capacitor serviceability temperature compensation condenser simultaneously.

57., it is characterized in that according to the described high-frequency device of claim 38, at the phase comparator of input reference frequency signal reference divider is set, the frequency dividing ratio of this reference divider can be changed.

58., it is characterized in that the output frequency of voltage-controlled oscillator is high more according to the described high-frequency device of claim 57, make the frequency dividing ratio of reference divider more little.

59. according to the described high-frequency device of claim 38, it is characterized in that, between frequency mixer and lead-out terminal, be set up in parallel and have decay and increase a plurality of intermediate frequency tuned filters that (roll off) characteristic has different frequency bandwidths simultaneously gradually, this intermediate frequency tuned filter can be switched selectively according to the transmission rate from the signal of input terminal input with frequency.

60., it is characterized in that, between input terminal and frequency mixer, variable attenuator is set, and the control terminal of this variable attenuator of control is set according to the described high-frequency device of claim 38.

61. according to the described high-frequency device of claim 38, it is characterized in that, by the tuning surface wave filter of intermediate frequency the I/Q wave detector is connected on the lead-out terminal, the 1st lead-out terminal of the I signal output of this I/Q wave detector is set, the 2nd lead-out terminal of the Q signal of described I/Q wave detector output and the 2nd oscillator of oscillation frequency signal is provided to described I/Q wave detector, described the 2nd oscillator has resonant structure, the substrate that constitutes the substrate of surface resonator of described resonant structure and the tuning surface wave filter of described intermediate frequency uses the substrate of same material, the frequency error detector of the frequency error of the signal that detects described the 1st lead-out terminal and the output of described the 2nd lead-out terminal is set simultaneously, according to the output of this frequency error detector data, make the centre frequency of the frequency of oscillation of described the 2nd oscillator and intermediate frequency roughly the same with this with forward-backward counter control frequency divider.

62. according to the described high-frequency device of claim 61, it is characterized in that, with the frequency bandwidth of the 3dB cut-off frequency of the tuning surface wave filter of intermediate frequency definition at more than 0% of frequency bandwidth that equates with the symbol rate of received signal, below+5%.

63. according to the described high-frequency device of claim 38, it is characterized in that, between input terminal and frequency mixer, insert input filter, simultaneously, make the local oscillator vibration, it produces than 1/2nd of the difference of the peak frequency of the signal of above-mentioned input terminal input and minimum frequency big IF-FRE, the above-mentioned input filter fixed filters that above-mentioned minimum frequency is all passed through to peak frequency.

64., it is characterized in that the output signal frequency of frequency mixer is got about 612MHz according to the described high-frequency device of claim 63.

65. according to the described high-frequency device of claim 38, setting is connected in the I/Q extraction means on the lead-out terminal, the I signal of these I/Q extraction means is exported the 2nd lead-out terminal that Q signal connected of the 1st lead-out terminal that is connected, above-mentioned I/Q extraction means, connect demodulator on above-mentioned the 1st, the 2nd lead-out terminal, this demodulator is installed in the crown cap outside simultaneously.

66., connect the positive Copper Foil that lays on the substrate of the demodulator that integrated circuit constitutes, the described substrate front side below described demodulator and the Copper Foil of the described substrate back that is laid in of being equipped with through hole according to the described high-frequency device of claim 65.

67. according to the described high-frequency device of claim 65, it is characterized in that, on the described substrate below the described integrated circuit of the substrate that the demodulator that integrated circuit constitutes is housed, be provided with chip component than this IC interior big, than this little hole, integrated circuit periphery.

68., it is characterized in that the Copper Foil of the substrate back that is laid in is provided with a plurality of long narrow square positions that do not form protecting film that are, and does not form the position molten solder material of protecting film and forms convex at this according to the described high-frequency device of claim 66.

69. according to the described high-frequency device of claim 38, it is characterized in that, between input terminal and frequency mixer, input filter is set, the Q signal that the 1st lead-out terminal that the I signal output that the I/Q that output the connected extraction means of the intermediate frequency tuned filter that setting simultaneously is connected with lead-out terminal, this intermediate frequency tuned filter, this I/Q extract means is connected and this I/Q extract means is exported the 2nd lead-out terminal that is connected, and these parts are installed in the same shield shell.

70. according to the described high-frequency device of claim 69, it is characterized in that, at frequency mixer be used for the barricade of configuration more than at least one between the oscillator that I/Q extracts means.

71., it is characterized in that according to the described high-frequency device of claim 69, frequency mixer is installed in the same shield shell with being used for the oscillator that I/Q extracts means, simultaneously described frequency mixer be used for I/Q and extract the oscillator configuration of means at diagonal.

72. according to the described high-frequency device of claim 69, it is characterized in that, on a longitudinal side of the shield shell that roughly is rectangle, input terminal is set, configuration input filter and above-mentioned frequency mixer link to each other with this input terminal, simultaneously, with above-mentioned input filter and above-mentioned frequency mixer almost parallel division board is set, the local oscillator of frequency of oscillation is provided to above-mentioned frequency mixer in the opposite side configuration across above-mentioned division board with respect to above-mentioned input filter and above-mentioned frequency mixer.

73. according to the described high-frequency device of claim 70, it is characterized in that, between local oscillator that frequency of oscillation is provided to frequency mixer and I/Q extraction means, be provided with the compartment that the intermediate frequency tuned filter is installed.

74. according to the described high-frequency device of claim 72, it is characterized in that, the control terminal of local oscillator and the lead-out terminal that I/Q extracts means be set near the 1st horizontal side plate of shield shell.

75. high-frequency device according to claim 1, it is characterized in that, simultaneously, offer near the frequency distribution characteristic of the signal level the centre frequency of reference frequency signal of above-mentioned phase comparator, outputing near the comparison of frequency distribution characteristic of the signal level the centre frequency of frequency mixer with above-mentioned local oscillator, except the real centre frequency part of this frequency distribution characteristic, make the signal level on each frequency that departs from same frequency from centre frequency lower than the signal level that high loop bandwidth can reduce noise.

76., it is characterized in that the frequency adjustment part has with removable state and is arranged at conductive member on the substrate according to the described high-frequency device of claim 75; The means of keeping are used fixed component, and above-mentioned conductive member is fixed with described fixed component.

77. according to the described high-frequency device of claim 75, it is characterized in that, the inductance element that constitutes tuning portion uses the figure inductive circuit, but nearby dispose moving-conductor at this figure inductive circuit, but this moving-conductor is moved to adjust, adjusted moving-conductor is fixed but use the fixed component conduct to keep means simultaneously.

78. will require 77 described high-frequency devices according to right, it is characterized in that, but moving-conductor be on the position at center of top, line width of figure inductive circuit, be provided with this figure inductive circuit almost parallel.

79., it is characterized in that movable conductor arrangement is near the open end of figure inductive circuit according to the described high-frequency device of claim 77.

80. according to the described high-frequency device of claim 75, it is characterized in that, straight cutting is provided with air core coil or dull and stereotyped circuit as the inductance element that constitutes tuning portion, adjusts this air core coil or dull and stereotyped circuit, fixes described air core coil or dull and stereotyped circuit with fixed component as keeping means simultaneously.

81., it is characterized in that the frequency adjustment part uses the periphery of volume core as keeping means according to the described high-frequency device of claim 75, the peripheral coiled conductor at described volume core constitutes simultaneously.

82. according to the described high-frequency device of claim 75, it is characterized in that, the inductance element that constitutes tuning portion is made of the mobile core that cylindrical circular insulator, the peripheral wound conductor at this insulator, the negative thread that is located at described columnar insulator inner surface and its periphery are provided with this negative thread mating male threads.

83. according to the described high-frequency device of claim 75, it is characterized in that, constitute the inductance element of tuning portion, be but that an end of figure inductive circuit and an end of moving-conductor are connected in series, but described moving-conductor is adjusted, use the fixed component conduct to keep means simultaneously, but with the fixing described moving-conductor of described fixed component.

84., it is characterized in that according to the described high-frequency device of claim 75, constitute the inductance element of tuning portion, be to use the figure inductive circuit, the adjustment part that is arranged on this figure inductive circuit is pruned, cover this pruning place with lining material simultaneously.

85. 4 described high-frequency devices according to Claim 8, it is characterized in that, but an end of figure inductive circuit and an end of moving-conductor are connected in series, but this moving-conductor is adjusted, use the fixed component conduct to keep means simultaneously, but with the fixing described moving-conductor of described fixed component.

86. according to the described high-frequency device of claim 75, it is characterized in that, local oscillator and frequency mixer are placed in the metal shell, will constitute simultaneously that figure inductive circuit on the substrate that is laid in of a part of tuning portion of described local oscillator is arranged at described metal shell or perpendicular near the metal division board of substrate.

87., it is characterized in that the capacitor of loop filter uses film capacitor according to the described high-frequency device of claim 75.

88. 7 described high-frequency devices according to Claim 8, it is characterized in that, film capacitor is installed in front one side of substrate, the lead-in wire of described film capacitor inserts in the through hole of described substrate setting, conductor fig and described lead-in wire are welded simultaneously in this substrate back one side, with in the described through hole as non-electrode formation portion.

89. high-frequency device according to claim 13, it is characterized in that, separate loop filter and local oscillator with division board, on this division board, offer simultaneously the opening of the conductor fig of described loop filter of connection and described local oscillator by usefulness, nearby described film capacitor is installed at this opening, is covered this opening with this film capacitor.

90., it is characterized in that loop filter is made of two-staged transistor according to the described high-frequency device of claim 75.

91. according to the described high-frequency device of claim 75, it is characterized in that, but tuning portion has moving-conductor, but described moving-conductor, variable capacitance diode, figure inductive circuit be connected in series successively, described figure inductive circuit is connected in oscillating portion one side simultaneously.

92. according to the described high-frequency device of claim 75, it is characterized in that, tuning portion has variable capacitance diode and figure inductive circuit, described variable capacitance diode and figure inductive circuit are connected in series by the low capacity chip capacitor, and described low capacity chip capacitor is installed near described figure inductive circuit.

93. according to the described high-frequency device of claim 92, it is characterized in that, between variable capacitance diode and inductance, insert the low capacity chip capacitor as the 1st capacitor, between described variable capacitance diode and oscillating portion, insert the 2nd capacitor, described the 1st capacitor and described the 2nd capacitor serviceability temperature compensation condenser simultaneously.

94., it is characterized in that according to the described high-frequency device of claim 75, at the phase comparator of input reference frequency signal reference divider is set, the frequency dividing ratio of this reference divider can be changed.

95., it is characterized in that the output frequency of voltage-controlled oscillator is high more according to the described high-frequency device of claim 94, make the frequency dividing ratio of reference divider more little.

96. according to the described high-frequency device of claim 75, it is characterized in that, between frequency mixer and lead-out terminal, be set up in parallel and have a plurality of intermediate frequency tuned filters that roll-off characteristic has different frequency bandwidths simultaneously, this intermediate frequency tuned filter can be switched selectively according to the transmission rate from the signal of input terminal input.

97., it is characterized in that, between input terminal and frequency mixer, variable attenuator is set, and the control terminal of this variable attenuator of control is set according to the described high-frequency device of claim 75.

98. according to the described high-frequency device of claim 75, it is characterized in that, by the tuning surface wave filter of intermediate frequency the I/Q wave detector is connected on the lead-out terminal, the 1st lead-out terminal of the I signal output of this I/Q wave detector is set, the 2nd lead-out terminal of the Q signal of described I/Q wave detector output and the 2nd oscillator of oscillation frequency signal is provided to described I/Q wave detector, described the 2nd oscillator has resonant structure, the substrate that constitutes the substrate of surface resonator of described resonant structure and the tuning surface wave filter of described intermediate frequency uses the substrate of same material, the frequency error detector of the frequency error of the signal that detects described the 1st lead-out terminal and the output of described the 2nd lead-out terminal is set simultaneously, according to the output of this frequency error detector data, make the centre frequency of the frequency of oscillation of described the 2nd oscillator and intermediate frequency roughly the same with this with forward-backward counter control frequency divider.

99. according to the described high-frequency device of claim 98, it is characterized in that, with the frequency bandwidth of the 3dB cut-off frequency of the tuning surface wave filter of intermediate frequency definition at more than 0% of frequency bandwidth that equates with the symbol rate of received signal, below+5%.

100. according to the described high-frequency device of claim 75, it is characterized in that, between input terminal and frequency mixer, insert input filter, simultaneously, make the local oscillator vibration, it produces than 1/2nd of the difference of the peak frequency of the signal of above-mentioned input terminal input and minimum frequency big IF-FRE, and above-mentioned input filter is got the fixed filters that above-mentioned minimum frequency is all passed through to peak frequency.

101., it is characterized in that the output signal frequency of frequency mixer is got about 612MHz according to the described high-frequency device of claim 100.

102. according to the described high-frequency device of claim 75, setting is connected in the I/Q extraction means on the lead-out terminal, the I signal of these I/Q extraction means is exported the 2nd lead-out terminal that Q signal connected of the 1st lead-out terminal that is connected, above-mentioned I/Q extraction means, connect demodulator on above-mentioned the 1st, the 2nd lead-out terminal, this demodulator is installed in the crown cap outside simultaneously.

103., connect the positive Copper Foil that lays on the substrate of the demodulator that integrated circuit constitutes, the described substrate front side below described demodulator and the Copper Foil of the described substrate back that is laid in of being equipped with through hole according to the described high-frequency device of claim 102.

104. according to the described high-frequency device of claim 102, it is characterized in that, on the described substrate below the described integrated circuit of the substrate that the demodulator that integrated circuit constitutes is housed, be provided with chip component than this IC interior big, than this little hole, integrated circuit periphery.

105., it is characterized in that the Copper Foil of the substrate back that is laid in is provided with a plurality of long narrow square positions that do not form protecting film that are, and does not form the position molten solder material of protecting film and forms convex at this according to the described high-frequency device of claim 103.

106. according to the described high-frequency device of claim 75, it is characterized in that, between input terminal and frequency mixer, input filter is set, the Q signal that the 1st lead-out terminal that the I signal output that the I/Q that output the connected extraction means of the intermediate frequency tuned filter that setting simultaneously is connected with lead-out terminal, this intermediate frequency tuned filter, this I/Q extract means is connected and this I/Q extract means is exported the 2nd lead-out terminal that is connected, and these parts are installed in the same shield shell.

107. according to the described high-frequency device of claim 106, it is characterized in that, at frequency mixer be used for the barricade of configuration more than at least one between the oscillator that I/Q extracts means.

108., it is characterized in that according to the described high-frequency device of claim 106, frequency mixer is installed in the same shield shell with being used for the oscillator that I/Q extracts means, simultaneously described frequency mixer be used for I/Q and extract the oscillator configuration of means at diagonal.

109. according to the described high-frequency device of claim 106, it is characterized in that, on a longitudinal side of the shield shell that roughly is rectangle, input terminal is set, configuration input filter and above-mentioned frequency mixer link to each other with this input terminal, simultaneously, with above-mentioned input filter and above-mentioned frequency mixer almost parallel division board is set, the local oscillator of frequency of oscillation is provided to above-mentioned frequency mixer in the opposite side configuration across above-mentioned division board with respect to above-mentioned input filter and above-mentioned frequency mixer.

110. according to the described high-frequency device of claim 107, it is characterized in that, between local oscillator that frequency of oscillation is provided to frequency mixer and I/Q extraction means, be provided with the compartment that the intermediate frequency tuned filter is installed.

111. according to the described high-frequency device of claim 109, it is characterized in that, the control terminal of local oscillator and the lead-out terminal that I/Q extracts means be set near the 1st horizontal side plate of shield shell.

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