CN109974861B - Scene self-adaption based non-uniform correction method for infrared photoelectric sensor - Google Patents
Scene self-adaption based non-uniform correction method for infrared photoelectric sensor Download PDFInfo
- Publication number
- CN109974861B CN109974861B CN201910245357.9A CN201910245357A CN109974861B CN 109974861 B CN109974861 B CN 109974861B CN 201910245357 A CN201910245357 A CN 201910245357A CN 109974861 B CN109974861 B CN 109974861B
- Authority
- CN
- China
- Prior art keywords
- detector
- mirror
- correcting mirror
- infrared
- correcting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 238000003384 imaging method Methods 0.000 claims description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000000523 sample Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 238000012634 optical imaging Methods 0.000 description 4
- 238000005057 refrigeration Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Lenses (AREA)
Abstract
The invention provides a scene self-adaptive-based non-uniform correction method for an infrared photoelectric sensorIncluding the operating band of the probe, the F-number of the probe F#The distance value L between the focal plane of the detector and the protective glass of the detector; and determining optical and appearance parameters of the correcting mirror according to the parameters of the infrared detector, wherein the optical and appearance parameters comprise optical materials of the correcting mirror, the F number of the correcting mirror, the focal length of the correcting mirror, the clear aperture of the correcting mirror, the first curvature radius of the correcting mirror, the second curvature radius of the correcting mirror and the central thickness of the correcting mirror. By adopting the invention, the infrared radiation of the ground and sea surface target scenes and the infrared radiation of the optical system can be completely and uniformly transmitted to the focal plane of the infrared detector in real time, thereby realizing the non-uniform correction of the infrared photoelectric sensor.
Description
Technical Field
The invention relates to an infrared photoelectric sensor non-uniformity correction technology, in particular to an infrared photoelectric sensor non-uniformity correction method based on scene self-adaptation.
Background
Due to the influence of factors such as manufacturing process and optical system errors, response characteristics of detection pixels on a focal plane array are inconsistent and have nonuniformity, imaging quality and identification distance of a target are seriously influenced, and the infrared detector unit in an infrared photoelectric sensor system needs to carry out nonuniform correction on the infrared focal plane array.
The current common methods are: generally, a 'blocking piece' is arranged in front of a system lens or between the lens and a detector to provide a reference temperature for an infrared detector, so that the infrared irradiance on a focal plane of the detector is equal, and then a mature one-point or two-point non-uniform correction algorithm is adopted to realize the consistency of output signals among infrared detector pixels and complete non-uniform correction. Chinese patent document CN104344897A discloses a non-uniformity correction mechanism for an infrared optical system, in which the reference temperature provided by a "shielding plate" is the temperature inside the optical system, and cannot be reflected in real time. Chinese patent document CN103528690A discloses a method for correcting non-uniformity of a thermal infrared imager, in which a "baffle" located between a lens and a detector can only provide the temperature inside an optical system as a reference temperature, and cannot reflect the temperature of an external ground and sea surface scene in real time.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a scene self-adaptive infrared photoelectric sensor non-uniform correction method, which can completely and uniformly transmit infrared radiation of a ground and sea surface target scene and the infrared radiation of an optical system to a focal plane of an infrared detector in real time to realize non-uniform correction of the infrared photoelectric sensor.
The technical scheme of the invention is as follows:
the infrared photoelectric sensor non-uniform correction method based on scene self-adaptation is characterized in that: the method comprises the following steps:
step 1: determining parameters of an infrared detector, including the operating band of the detector, the F-number of the detector#The distance value L between the focal plane of the detector and the protective glass of the detector;
step 2: determining optical and appearance parameters of the correcting mirror according to the infrared detector parameters determined in the step 1, wherein the optical and appearance parameters comprise optical materials of the correcting mirror, the F number of the correcting mirror, the focal length of the correcting mirror, the clear aperture of the correcting mirror, the first curvature radius of the correcting mirror, the second curvature radius of the correcting mirror and the central thickness of the correcting mirror:
optical material of the correction mirror: when the working wavelength band of the detector is 3 um-5 um, the optical material is monocrystalline silicon; when the working wavelength band of the detector is 8-12 um, the optical material is monocrystalline germanium;
the value of the F number of the correcting mirror is not more than the F number of the detector;
the focal length f of the correcting mirror is in the range: f is more than L;
the clear aperture of the correcting mirror is D ═ F/F#；
The first curvature radius R1 of the correction mirror is f (n-1), f is the focal length of the correction mirror, and n is the refractive index of the optical material of the correction mirror at the central working wavelength of the detector;
the second radius of curvature R2 ═ infinity of the correction mirror;
the central thickness value d of the correcting mirror is 1-1.5 mm;
and step 3: and (3) the correcting mirror determined in the step (2) is driven into an imaging light path and is positioned between an imaging lens of the infrared detector and the protective glass, the infrared radiation of a target scene is projected onto a focal plane of the infrared detector, a uniform temperature field is provided, and the detector is non-uniformly corrected by adopting a single-point non-uniform correction algorithm.
Advantageous effects
The invention does not adopt a baffle plate or a baffle plate, but provides a correcting mirror, when the correcting mirror enters an imaging light path, the infrared radiation of a target scene is completely and uniformly projected onto a focal plane of a detector, a uniform temperature field is provided for adopting a single-point non-uniform correction algorithm, and the non-uniform correction of the detector is realized.
Drawings
FIG. 1 is a schematic diagram of a non-uniformity corrector mirror according to the present invention;
FIG. 2 is a part-machining view of a medium wave infrared non-uniformity corrector mirror;
FIG. 3 is a long wave infrared non-uniformity corrector lens part processing diagram;
FIG. 4 is a diagram of the working optical path of the non-uniform correcting mirror;
fig. 5 is an operation optical path diagram of the imaging optical system.
Detailed Description
As shown in FIG. 1, R1 is the first radius of curvature of the corrector lens, R2 is the second radius of curvature of the corrector lens, D is the center thickness of the corrector lens, and D is the clear aperture of the corrector lens.
Fig. 4 is an imaging optical path diagram of an optical lens of the infrared photoelectric sensor, where 1 is an imaging lens i, 2 is an imaging lens ii, 3 is an imaging lens iii, 4 is a correcting lens, 5 is detector protective glass, 6 is a detector diaphragm, and 7 is a detector focal plane.
Example 1: the detector parameters can be obtained according to the instruction manual of the refrigeration type infrared detector used. The working wave band is medium wave infrared, 3.7 um-4.8 um, F number is 4, and the distance L between the protective glass and the focal plane is 23.75 mm.
The optical material of the correction mirror is determined to be single crystal silicon (Si), which has a refractive index n of 3.4242.
The correcting mirror 4 is placed between the optical imaging lens group 1, 2, 3 and the detector protective glass 5, and is 5mm away from the detector protective glass 5. The focal length of the corrector lens 4 is: f ═ L +5 ═ 23.75+5 ═ 28.75 (mm). The clear aperture of the corrector lens 4 is: d ═ F/F#28.75/4-7.2 mm. The first radius of curvature R1 ═ f (n-1) ═ 28.75 ═ 3.4242-1 ═ 69.69(mm) of the correcting mirror 4. The second radius of curvature R2 of the corrector mirror is planar. The first and second surface roughness are both 0.012, and the antireflection film layer with the bandwidth of 3.7 um-4.8 um is plated at the same time.
FIG. 4 shows that the calibration mirror enters the imaging optical path to completely and uniformly project the infrared radiation of the target scene onto the focal plane 7 of the detector, so as to provide a uniform temperature field for the single-point non-uniform calibration algorithm and realize the non-uniform calibration of the detector.
Example 2: the detector parameters can be obtained according to the instruction manual of the refrigeration type infrared detector used. The working wave band is medium wave infrared, 3.7 um-4.8 um, F number is 2, and the distance L between the protective glass and the focal plane is 23.75 mm.
The optical material of the correction mirror is determined to be single crystal silicon (Si), which has a refractive index n of 3.4242.
The correcting mirror 4 is placed between the optical imaging lens group 1, 2, 3 and the detector protective glass 5, and is 5mm away from the detector protective glass 5. The focal length of the corrector lens 4 is: f ═ L +5 ═ 23.75+5 ═ 28.75 (mm). The clear aperture of the corrector lens 4 is: d ═ F/F#28.75/2-14.4 mm. The first radius of curvature R1 ═ f (n-1) ═ 28.75 ═ 3.4242-1 ═ 69.69(mm) of the correcting mirror 4. The second radius of curvature R2 of the corrector mirror is planar. The first and second surface roughness are both 0.012, and the antireflection film layer with the bandwidth of 3.7 um-4.8 um is plated at the same time.
FIG. 4 shows that the calibration mirror enters the imaging optical path to completely and uniformly project the infrared radiation of the target scene onto the focal plane 7 of the detector, so as to provide a uniform temperature field for the single-point non-uniform calibration algorithm and realize the non-uniform calibration of the detector.
Example 3: the detector parameters can be obtained according to the instruction manual of the refrigeration type infrared detector used. The working wave band is long-wave infrared, 7.8 um-10.8 um, F number is 4, and the distance L between the protective glass and the focal plane is 23.75 mm.
The optical material of the correction mirror is determined as single germanium (Ge) with a refractive index n of 4.0049.
The correcting mirror 4 is placed between the optical imaging lens group 1, 2, 3 and the detector protective glass 5, and is 5mm away from the detector protective glass 5. The focal length of the corrector lens 4 is: f ═ L +5 ═ 23.75+5 ═ 28.75 (mm). The clear aperture of the corrector lens 4 is: d ═ F/F#28.75/4-6.9 mm. The first radius of curvature R1 ═ f (n-1) ═ 28.75 ═ 4.0069-1 ═ 86.45(mm) of the correcting mirror 4. The second radius of curvature R2 of the corrector mirror is planar. The roughness of the first surface and the second surface is 0.012, and an antireflection film layer with the bandwidth of 7.8 um-10.8 um is plated at the same time.
FIG. 4 shows that the calibration mirror enters the imaging optical path to completely and uniformly project the infrared radiation of the target scene onto the focal plane 7 of the detector, so as to provide a uniform temperature field for the single-point non-uniform calibration algorithm and realize the non-uniform calibration of the detector.
Example 4: the detector parameters can be obtained according to the instruction manual of the refrigeration type infrared detector used. The working wave band is long-wave infrared, 7.8 um-10.8 um, F number is 2, and the distance L between the protective glass and the focal plane is 23.75 mm.
The optical material of the correction mirror is determined as single germanium (Ge) with a refractive index n of 4.0049.
The correcting mirror 4 is placed between the optical imaging lens group 1, 2, 3 and the detector protective glass 5, and is 5mm away from the detector protective glass 5. The focal length of the corrector lens 4 is: f ═ L +5 ═ 23.75+5 ═ 28.75 (mm). The clear aperture of the corrector lens 4 is: d ═ F/F#28.75/4-14.4 mm. The first radius of curvature R1 ═ f (n-1) ═ 28.75 ═ 4.0069-1 ═ 86.45(mm) of the correcting mirror 4. The second radius of curvature R2 of the corrector mirror is planar. The roughness of the first surface and the second surface is 0.012, and an antireflection film layer with the bandwidth of 7.8 um-10.8 um is plated at the same time.
FIG. 4 shows that the calibration mirror enters the imaging optical path to completely and uniformly project the infrared radiation of the target scene onto the focal plane 7 of the detector, so as to provide a uniform temperature field for the single-point non-uniform calibration algorithm and realize the non-uniform calibration of the detector.
Claims (1)
1. A scene self-adaptive-based infrared photoelectric sensor non-uniform correction method is characterized by comprising the following steps: the method comprises the following steps:
step 1: determining parameters of an infrared detector, including the operating band of the detector, the F-number of the detector#The distance value L between the focal plane of the detector and the protective glass of the detector;
step 2: determining optical and appearance parameters of the correcting mirror according to the infrared detector parameters determined in the step 1, wherein the optical and appearance parameters comprise optical materials of the correcting mirror, the F number of the correcting mirror, the focal length of the correcting mirror, the clear aperture of the correcting mirror, the first curvature radius of the correcting mirror, the second curvature radius of the correcting mirror and the central thickness of the correcting mirror:
optical material of the correction mirror: when the working wavelength band of the detector is 3 um-5 um, the optical material is monocrystalline silicon; when the working wavelength band of the detector is 8-12 um, the optical material is monocrystalline germanium;
the value of the F number of the correcting mirror is not more than the F number of the detector;
the focal length f of the correcting mirror is in the range: f is more than L;
the clear aperture of the correcting mirror is D ═ F/F#；
The first curvature radius R1 of the correction mirror is f (n-1), f is the focal length of the correction mirror, and n is the refractive index of the optical material of the correction mirror at the central working wavelength of the detector;
the second radius of curvature R2 ═ infinity of the correction mirror;
the central thickness value d of the correcting mirror is 1-1.5 mm;
and step 3: and (3) the correcting mirror determined in the step (2) is driven into an imaging light path and is positioned between an imaging lens of the infrared detector and the protective glass, the infrared radiation of a target scene is projected onto a focal plane of the infrared detector, a uniform temperature field is provided, and the detector is non-uniformly corrected by adopting a single-point non-uniform correction algorithm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910245357.9A CN109974861B (en) | 2019-03-28 | 2019-03-28 | Scene self-adaption based non-uniform correction method for infrared photoelectric sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910245357.9A CN109974861B (en) | 2019-03-28 | 2019-03-28 | Scene self-adaption based non-uniform correction method for infrared photoelectric sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109974861A CN109974861A (en) | 2019-07-05 |
| CN109974861B true CN109974861B (en) | 2020-09-22 |
Family
ID=67081398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910245357.9A Active CN109974861B (en) | 2019-03-28 | 2019-03-28 | Scene self-adaption based non-uniform correction method for infrared photoelectric sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109974861B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112595422A (en) * | 2020-11-03 | 2021-04-02 | 中国航空工业集团公司洛阳电光设备研究所 | Blocking piece and light path based on scene temperature non-uniform correction |
| CN113776673B (en) * | 2021-11-12 | 2022-02-22 | 国科天成科技股份有限公司 | Non-uniform correction system of thermal infrared imager with large zoom ratio |
| CN114441050A (en) * | 2022-01-26 | 2022-05-06 | 西安应用光学研究所 | Thermal imager real-time non-uniformity correction method based on rotating separation blade |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2009147678A (en) * | 2009-12-21 | 2011-06-27 | Федеральное государственное унитарное предприятие "Научно-производственное объединение "Государственный институт прикладной оптики" | METHOD FOR MEASURING LENS TRANSMISSION FACTOR |
| CN105547486A (en) * | 2015-12-05 | 2016-05-04 | 中国航空工业集团公司洛阳电光设备研究所 | Cooled three-field infrared thermal imager |
| CN106526818A (en) * | 2016-12-06 | 2017-03-22 | 中国航空工业集团公司洛阳电光设备研究所 | Three-group linkage compact type high-zoom-ratio infrared continuous zooming optical system |
| CN106772936A (en) * | 2016-12-08 | 2017-05-31 | 北京控制工程研究所 | One kind miniaturization Rotating Platform for High Precision Star Sensor optical system |
| CN107015349A (en) * | 2017-04-18 | 2017-08-04 | 凯迈（洛阳）测控有限公司 | A kind of low-light level television imaging relaying coupling optical system |
-
2019
- 2019-03-28 CN CN201910245357.9A patent/CN109974861B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2009147678A (en) * | 2009-12-21 | 2011-06-27 | Федеральное государственное унитарное предприятие "Научно-производственное объединение "Государственный институт прикладной оптики" | METHOD FOR MEASURING LENS TRANSMISSION FACTOR |
| CN105547486A (en) * | 2015-12-05 | 2016-05-04 | 中国航空工业集团公司洛阳电光设备研究所 | Cooled three-field infrared thermal imager |
| CN106526818A (en) * | 2016-12-06 | 2017-03-22 | 中国航空工业集团公司洛阳电光设备研究所 | Three-group linkage compact type high-zoom-ratio infrared continuous zooming optical system |
| CN106772936A (en) * | 2016-12-08 | 2017-05-31 | 北京控制工程研究所 | One kind miniaturization Rotating Platform for High Precision Star Sensor optical system |
| CN107015349A (en) * | 2017-04-18 | 2017-08-04 | 凯迈（洛阳）测控有限公司 | A kind of low-light level television imaging relaying coupling optical system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109974861A (en) | 2019-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109974861B (en) | Scene self-adaption based non-uniform correction method for infrared photoelectric sensor | |
| EP2525563B1 (en) | Image-pickup element, and image-pickup apparatus and camera system having the same | |
| US8446472B2 (en) | Mixed optical device for multifocal imaging and IR calibration | |
| CN109932061B (en) | Cold reflection-based real-time correction method for area array thermal infrared imager | |
| RU2449328C1 (en) | Optical system for thermal imaging devices | |
| CN112882203A (en) | Short-focus lens and short-focus optical system | |
| CN104155758A (en) | Large-view-field curved surface focal plane imaging method and system based on image transmitting optical fiber bundle | |
| CN110361094B (en) | Non-uniformity correction method and device for staring type focal plane array | |
| CN111272290A (en) | Temperature measurement thermal infrared imager calibration method and device based on deep neural network | |
| CN101001309A (en) | Imaging system and method | |
| CN113538314B (en) | Four-band common-optical-axis photoelectric imaging platform and image fusion processing method thereof | |
| Venkateswarlu et al. | Nonuniformity compensation for IR focal plane array sensors | |
| CN112710397A (en) | Two-point correction method and system based on temperature substitution | |
| CN106657982A (en) | Image pickup module set image definition calibration method and apparatus | |
| CN106054360B (en) | A kind of space image space telecentric lens | |
| CN216526478U (en) | Short-focus lens and short-focus optical system | |
| CN103969801A (en) | Method for designing infrared imaging lens and focusing-free refrigeration type infrared imaging lens | |
| CN111598815B (en) | Thermal infrared imager image non-uniformity correction method and device | |
| CN101071261A (en) | Method for detecting coated surface of IR-cut filter | |
| CN113970374A (en) | Calibration method for polarization detection system of focal plane | |
| JP4278380B2 (en) | Pseudorandomized blurred infrared imaging element array | |
| CN204086665U (en) | Without focusing refrigeration mode infrared imaging camera lens | |
| CN209343021U (en) | A kind of LONG WAVE INFRARED pin hole wide-angle thermometric camera lens | |
| CN113865722B (en) | Area array refrigeration thermal infrared imager correction method based on diffuse reflection metal plate | |
| KR100390316B1 (en) | Method for correcting non-uniformity of images in a thermal lnaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |