CN109962117B - 一种多重响应波段的半导体探测器 - Google Patents

一种多重响应波段的半导体探测器 Download PDF

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CN109962117B
CN109962117B CN201910284569.8A CN201910284569A CN109962117B CN 109962117 B CN109962117 B CN 109962117B CN 201910284569 A CN201910284569 A CN 201910284569A CN 109962117 B CN109962117 B CN 109962117B
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郑清团
王星河
叶芳
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Linyi Anfu Electronic Co ltd
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Abstract

本发明公开一种多重响应波段的半导体探测器，依次包括衬底、第一导电型氮化物半导体，InxGa1‑xN/GaN量子阱，V‑pits，第一Au纳米颗粒，Ga2O3/ZnO核壳结构纳米柱，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒，第二导电型Si基板，其特征在于所述InxGa1‑xN/GaN量子阱的V‑pits上方依次沉积第一Au纳米颗粒，Ga2O3/ZnO，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒。

Description

一种多重响应波段的半导体探测器
技术领域
本发明涉及半导体光电探测器领域，特别是一种多重响应波段的半导体探测器。
背景技术
第三代化合物半导体具有较宽的带隙、电子迁移率高、击穿场强大、抗辐射性能强等优点，适合于制作发光二极管、激光器、探测器等光电子器件。带隙为3.3eV的碳化硅SiC、3.4eV的氮化镓GaN、6.2eV的氮化铝AlN以及带隙为4.2~4.9eV的氮化镓Ga2O3具有宽的带隙以及良好的化学性质，适合于制作紫外光电二极管和日盲探测器。
发明内容
本发明公开一种多重响应波段的半导体探测器，依次包括衬底、第一导电型氮化物半导体，InxGa1-xN/GaN量子阱，V-pits，第一Au纳米颗粒，Ga2O3/ZnO核壳结构纳米柱，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒，第二导电型Si基板，其特征在于所述InxGa1-xN/GaN量子阱的V-pits上方依次沉积第一Au纳米颗粒，Ga2O3/ZnO核壳结构纳米柱，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒。
进一步地，所述InxGa1-xN/GaN量子阱形成第一探测响应波段，所述第一探测响应波段为420~480nm；所述第一、第二Au纳米颗粒夹着Ga2O3/ZnO核壳结构纳米柱组成Au/Ga2O3/ZnO/Au三明治纳米结构，形成第二探测响应波段，所述第二探测响应波段为520~560nm；所述第二、第三Au纳米颗粒夹着SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层的核壳纳米柱组成Au/SiC-(Ga2O3)y/(GaN)z /Au三明治纳米结构，与第二导电型Si基板组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si，形成第三响应波段，所述第三响应波段为360~400 nm，从而在将多重响应波段集成在单个探测器的外延结构中。
进一步地，所述第一Au纳米颗粒/Ga2O3/ZnO核壳结构纳米柱/第二Au纳米颗粒/SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层/第三Au纳米颗粒形成复合纳米结构的击穿场强大于8 Mv/cm，该强大击穿强场的复合纳米结构填充于位错线顶端，提升该多重响应波段的半导体探测器的抗高压能力和ESD能力。
进一步地，所述V-pits的尺寸为50~500 nm，所述第一、第二、第三Au纳米颗粒的尺寸为50~500 nm，所述Ga2O3/ZnO核壳结构纳米柱的尺寸为50~500 nm，所述SiC纳米柱核层的尺寸为50~500 nm，所述GaN纳米柱壳层的尺寸为50~500 nm。
进一步地，所述V-pits的深度为D，所述第一Au纳米颗粒/Ga2O3纳米柱/第二Au纳米颗粒/SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层/第三Au纳米颗粒形成复合纳米结构的高度为H，其中H≤D，即复合纳米结构被包覆在V-pits里。
进一步地，所述第一、第二和第三Au纳米颗粒的形状为球状或半球状或椭球状。
进一步地，所述InxGa1-xN/GaN量子阱的In组分为x，其中0≤x≤1。
进一步地，所述Ga2O3/ZnO核壳结构纳米柱的核层为Ga2O3,壳层为ZnO，或者核层为ZnO，壳层为Ga2O3；所述Ga2O3/ZnO核壳结构纳米柱亦可为周期结构，即（Ga2O3/ZnO）m，周期m≥1。
进一步地，所述Ga2O3/ZnO核壳结构纳米柱的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意一种或任意组合。
进一步地，所述Ga2O3/ZnO核壳结构纳米柱的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意组合包括二元混合结构α-Ga2O3/β-Ga2O3，α-Ga2O3/β-Ga2O3，α-Ga2O3/γ-Ga2O3，α-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3，β-Ga2O3/δ-Ga2O3，γ-Ga2O3/δ-Ga2O3，以及三元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3，α-Ga2O3/β-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3/δ-Ga2O3，以及四元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3/δ-Ga2O3。
进一步地，所述(Ga2O3)y/(GaN)z纳米柱壳层为周期性结构，所述周期y≥0，z≥0。
进一步地，所述第二导电型Si基板组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si的结构包括Au/SiC-(Ga2O3)y/(GaN)z/Au/Si（当y＞0，z＞0时），Au/SiC-(GaN)z/Au/Si（当y=0时），Au/SiC-(Ga2O3)y/Au/Si（当z=0时），以及Au/SiC/Au/Si（当y=0，z=0时）。
附图说明
图1为本发明一种多重响应波段的半导体探测器的结构示意图。
图2为本发明一种多重响应波段的半导体探测器的效果示意图。
图示说明：100：衬底；101：第一导电型氮化物半导体，102：InxGa1-xN/GaN量子阱，103：V-pits，104a：第一Au纳米颗粒，105：Ga2O3/ZnO核壳结构纳米柱，104b：第二Au纳米颗粒，106：SiC纳米柱核层，107：(Ga2O3)y/(GaN)z纳米柱壳层，104c：第三Au纳米颗粒，108：第二导电型Si基板，109：位错线。
具体实施方式
实施例
本发明公开一种多重响应波段的半导体探测器，如图1所示，依次包括衬底100、第一导电型氮化物半导体101，InxGa1-xN/GaN量子阱102，V-pits 103，第一Au纳米颗粒104a，Ga2O3/ZnO核壳结构纳米柱105，第二Au纳米颗粒104b，SiC纳米柱核层106，(Ga2O3)y/(GaN)z纳米柱壳层107，第三Au纳米颗粒104c，第二导电型Si基板108，其特征在于所述InxGa1-xN/GaN量子阱102的V-pits 103上方依次沉积第一Au纳米颗粒104a，Ga2O3/ZnO核壳结构纳米柱105，第二Au纳米颗粒104b，SiC纳米柱核106层，(Ga2O3)y/(GaN)z纳米柱壳层107，第三Au纳米颗粒104c。
所述InxGa1-xN/GaN量子阱102形成第一探测响应波段，所述第一探测响应波段为420~480nm；所述第一Au纳米颗粒104a、第二Au纳米颗粒104b夹着Ga2O3/ZnO核壳结构纳米柱105组成Au/Ga2O3/ZnO/Au三明治纳米结构，形成第二探测响应波段，所述第二探测响应波段为520~560 nm；所述第二Au纳米颗粒104b、第三Au纳米颗粒104c夹着SiC纳米柱核层106/(Ga2O3)y/(GaN)z纳米柱壳层107的核壳纳米柱组成Au/SiC-(Ga2O3)y/(GaN)z/Au三明治纳米结构，与第二导电型Si基板108组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si，形成第三响应波段，所述第三响应波段为360~400 nm，从而在将多重响应波段集成在单个探测器的外延结构中，如图2所示。
所述第一Au纳米颗粒104a/Ga2O3/ZnO核壳结构纳米柱105/第二Au纳米颗粒104b/SiC纳米柱核层106/(Ga2O3)y/(GaN)z纳米柱壳层107/第三Au纳米颗粒104c形成复合纳米结构的击穿场强大于8 Mv/cm，该强大击穿强场的复合纳米结构填充于位错线109顶端，提升该多重响应波段的半导体探测器的抗高压能力和ESD能力。
所述V-pits 103的尺寸为50~500 nm，所述第一Au纳米颗粒104a、第二Au纳米颗粒104b、第三Au纳米颗粒104c的尺寸为50~500 nm，所述Ga2O3纳米柱105的尺寸为50~500 nm，所述SiC纳米柱核层106的尺寸为50~500 nm，所述(Ga2O3)y/(GaN)z纳米柱壳层107的尺寸为50~500 nm。
所述V-pits 103的深度为D，所述第一Au纳米颗粒104a/Ga2O3/ZnO核壳结构纳米柱105/第二Au纳米颗粒104b/SiC纳米柱核层106/(Ga2O3)y/(GaN)z纳米柱壳层107/第三Au纳米颗粒104c形成复合纳米结构的高度为H，其中H≤D，即复合纳米结构被包覆在V-pits里。
所述第一Au纳米颗粒104a、第二Au纳米颗粒104b、第三Au纳米颗粒104c的形状为球状或半球状或椭球状。
所述InxGa1-xN/GaN量子阱103的In组分为x，其中0≤x≤1。
所述Ga2O3/ZnO核壳结构纳米柱105的核层为Ga2O3,壳层为ZnO，或者核层为ZnO，壳层为Ga2O3；所述Ga2O3/ZnO核壳结构纳米柱105亦可为周期结构，即（Ga2O3/ZnO）m，周期m≥1。
所述Ga2O3/ZnO核壳结构纳米柱105的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意一种或任意组合。
所述Ga2O3/ZnO核壳结构纳米柱105的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意组合包括二元混合结构α-Ga2O3/β-Ga2O3，α-Ga2O3/β-Ga2O3，α-Ga2O3/γ-Ga2O3，α-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3，β-Ga2O3/δ-Ga2O3，γ-Ga2O3/δ-Ga2O3，以及三元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3，α-Ga2O3/β-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3/δ-Ga2O3，以及四元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3/δ-Ga2O3。
所述(Ga2O3)y/(GaN)z纳米柱壳层107为周期性结构，所述周期y≥0，z≥0。
所述第二导电型Si基板组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si的结构包括Au/SiC-(Ga2O3)y/(GaN)z/Au/Si（当y＞0，z＞0时），Au/SiC-(GaN)z/Au/Si（当y=0时），Au/SiC-(Ga2O3)y/Au/Si（当z=0时），以及Au/SiC/Au/Si（当y=0，z=0时）。
以上实施方式仅用于说明本发明，而并非用于限定本发明，本领域的技术人员，在不脱离本发明的精神和范围的情况下，可以对本发明做出各种修饰和变动，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应视权利要求书范围限定。

Claims (9)

1.一种多重响应波段的半导体探测器，依次包括衬底、第一导电型氮化物半导体，InxGa1-xN/GaN量子阱，V-pits，第一Au纳米颗粒，Ga2O3/ZnO核壳结构纳米柱，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒，第二导电型Si基板，其特征在于所述InxGa1-xN/GaN量子阱的V-pits上方依次沉积第一Au纳米颗粒，Ga2O3/ZnO核壳结构纳米柱，第二Au纳米颗粒，SiC纳米柱核层，(Ga2O3)y/(GaN)z纳米柱壳层，第三Au纳米颗粒；所述(Ga2O3)y/(GaN)z纳米柱壳层为周期性结构，周期y≥0，z≥0；所述InxGa1-xN/GaN量子阱的In组分为x，其中0≤x≤1。
2.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述InxGa1-xN/GaN量子阱形成第一探测响应波段，所述第一探测响应波段为420~480nm；所述第一、第二Au纳米颗粒夹着Ga2O3/ZnO核壳结构纳米柱组成Au/Ga2O3/ZnO/Au三明治纳米结构，形成第二探测响应波段，所述第二探测响应波段为520~560 nm；所述第二、第三Au纳米颗粒夹着SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层的核壳纳米柱组成Au/SiC-(Ga2O3)y/(GaN)z/Au三明治纳米结构，与第二导电型Si基板组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si，形成第三响应波段，所述第三响应波段为360~400 nm，从而在将多重响应波段集成在单个探测器的外延结构中。
3.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述第一Au纳米颗粒/Ga2O3/ZnO核壳结构纳米柱/第二Au纳米颗粒/SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层/第三Au纳米颗粒形成复合纳米结构的击穿场强大于8 Mv/cm，该复合纳米结构填充于位错线顶端，提升该多重响应波段的半导体探测器的抗高压能力和ESD能力;所述V-pits的尺寸为50~500 nm，所述第一、第二、第三Au纳米颗粒的尺寸为50~500 nm，所述Ga2O3/ZnO核壳结构纳米柱的尺寸为50~500 nm，所述SiC纳米柱核层的尺寸为50~500 nm，所述(Ga2O3)y/(GaN)z纳米柱壳层的尺寸为50~500 nm。
4.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述V-pits的深度为D，所述第一Au纳米颗粒/Ga2O3/ZnO核壳结构纳米柱/第二Au纳米颗粒/SiC纳米柱核层/(Ga2O3)y/(GaN)z纳米柱壳层/第三Au纳米颗粒形成复合纳米结构的高度为H，其中H≤D，即复合纳米结构被包覆在V-pits里。
5.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述第一、第二和第三Au纳米颗粒的形状为球状或半球状或椭球状。
6.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述Ga2O3/ZnO核壳结构纳米柱的核层为Ga2O3,壳层为ZnO，或者核层为ZnO，壳层为Ga2O3；所述Ga2O3/ZnO核壳结构纳米柱亦可为周期结构，即（Ga2O3/ZnO）m，周期m≥1。
7.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述Ga2O3/ZnO核壳结构纳米柱的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意一种或任意组合。
8.根据权利要求1所述一种多重响应波段的半导体探测器，其特征在于：所述Ga2O3/ZnO核壳结构纳米柱的Ga2O3结构包括α-Ga2O3，β-Ga2O3，γ-Ga2O3，δ-Ga2O3的任意组合，包括二元混合结构α-Ga2O3/β-Ga2O3，α-Ga2O3/γ-Ga2O3，α-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3，β-Ga2O3/δ-Ga2O3，γ-Ga2O3/δ-Ga2O3，以及三元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3，α-Ga2O3/β-Ga2O3/δ-Ga2O3，β-Ga2O3/γ-Ga2O3/δ-Ga2O3，以及四元混合结构α-Ga2O3/β-Ga2O3/γ-Ga2O3/δ-Ga2O3。
9.根据权利要求1或2所述一种多重响应波段的半导体探测器，其特征在于：所述第二导电型Si基板组成Au/SiC-(Ga2O3)y/(GaN)z/Au/Si的结构包括：当y＞0，z＞0时，Au/SiC-(Ga2O3)y/(GaN)z/Au/Si；当y=0时，Au/SiC-(GaN)z/Au/Si；当z=0时，Au/SiC-(Ga2O3)y/Au/Si；当y=0，z=0时，Au/SiC/Au/Si。
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