CN109960087A - 具有小的衍射的硅基液晶面板及制造其的工艺 - Google Patents
具有小的衍射的硅基液晶面板及制造其的工艺 Download PDFInfo
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Abstract
本发明提供一种硅基液晶(LCOS)面板及制造其的工艺。硅基液晶面板包括:硅衬底,具有位于所述硅衬底内的硅电路;多个金属电极,设置在所述硅衬底上,其中所述多个金属电极周期性地形成在所述硅衬底上;介电材料,设置在所述多个金属电极中的相邻的金属电极之间的间隙中并填充所述间隙;以及氧化物层,设置在所述多个金属电极以及位于所述多个金属电极中的相邻的金属电极之间的所述间隙中的所述介电材料上;其中所述介电材料的折射率高于所述氧化物层的折射率。本发明提供的硅基液晶面板可具有小的衍射。
Description
技术领域
本发明涉及一种硅基液晶(liquid crystal on silicon,LCOS)面板,且更具体来说涉及一种具有小的衍射的硅基液晶面板。
背景技术
近来,硅基液晶(LCOS)面板得到大量应用。一种应用是近眼显示器(near eyedisplay)。近眼显示器可为半透明的且可不为半透明的。近眼显示器可用在三维(3-dimensional,3D)增强实境(augmented reality,AR)及/或虚拟实境(virtual reality,VR)显示器中。
让眼睛从LCOS面板尽可能多地接收到强度是重要的。LCOS面板包括周期性的反射镜(periodical mirror),如金属电极。相邻的金属电极之间存在间隙。光的一些部分可被LCOS面板周期性结构衍射,且因此被眼睛所看到的图像的强度降低。
已提出若干尝试来降低被LCOS面板周期性结构衍射的强度。所采取的一种方式是在位于金属电极的顶部上及金属电极之间的间隙上放置包括具有不同折射率的多个层的高反射(high-reflection,HR)涂层。高反射涂层充当反射镜。由于高反射涂层覆盖金属电极及位于金属电极之间的间隙,因此入射光被高反射涂层反射,而不发生衍射。然而,高反射涂层的厚度可能影响在金属电极与对应体电极(counterpart electrode)之间产生的电场,进而使得经LCOS面板调制的光的对比度(contrast ratio)降低。
因此,需要一种具有较小的衍射且不牺牲对比度的LCOS面板。
发明内容
本公开的一实施例提供一种硅基液晶(LCOS)面板,其包括硅衬底、多个金属电极、介电材料以及氧化物层。硅衬底具有位于其内的硅电路。多个金属电极设置在硅衬底上,其中多个金属电极周期性地形成在硅衬底上。介电材料设置在相邻的金属电极之间的间隙中并填充所述间隙。氧化物层设置在多个金属电极以及位于相邻的金属电极之间的间隙中的介电材料上,其中所述介电材料的折射率高于所述氧化物层的折射率。
本公开的一实施例提供一种制造硅基液晶(LCOS)面板的工艺,其包括形成硅背板(silicon backplane)。所述形成硅背板的步骤包括:提供硅衬底,在硅衬底内具有硅电路;在硅衬底上形成金属层;对金属层进行蚀刻,以形成多个各别的金属电极以及位于相邻的金属电极之间的间隙,其中金属电极中的每一个金属电极均与其他金属电极电隔离;在相邻的金属电极之间的间隙中填充介电材料;以及在各别的金属电极以及位于相邻的金属电极之间的间隙中的介电材料上设置氧化物层,其中介电材料的折射率高于氧化物层的折射率。
本公开的另一实施例提供一种制造硅基液晶(LCOS)面板的工艺,其包括形成硅背板。所述形成硅背板的步骤包括:提供硅衬底,在硅衬底内具有硅电路;在硅衬底上形成金属层;对金属层进行蚀刻,以形成多个各别的金属电极以及位于相邻的金属电极之间的间隙,其中金属电极中的每一个金属电极均与其他金属电极电隔离;在金属电极上及间隙中形成介电材料衬层;对所形成的介电材料衬层进行蚀刻,以在间隙的壁上形成介电材料以及被介电材料环绕的空间;使用金属填充被介电材料环绕的空间,以形成被介电材料环绕的金属柱;以及在各别的金属电极以及位于相邻的金属电极之间的间隙中的介电材料上设置氧化物层,其中介电材料的折射率高于氧化物层的折射率。
附图说明
参照以下各图阐述本发明的非限制性实施例及非排他性实施例,除非另外指明,否则在所有各种图中相同的参考编号指代相同的部件。
图1是LCOS面板的示意图。
图2是根据本发明实施例的被准直激光束照射的处于关闭状态(off state)中的LCOS面板的示意图。
图3是根据本发明实施例展示的零阶衍射束(zero order diffraction beam)及四个一阶衍射束(first order diffraction beam)的屏幕的示意图。
图4是LCOS面板的硅背板的示意图。
图5所示是根据本发明实施例的函数f1(x),其代表参考线处的反射光的振幅,x是金属电极及间隙的位置的量纲。
图6是根据本发明实施例的LCOS面板的硅背板的示意图。
图7是根据本发明实施例的函数f2(x),其代表参考线处的反射光的振幅,x是金属电极及间隙的位置的量纲。
图8A到图8I是根据本发明实施例的制造具有高衍射率的液晶面板的工艺的示意图。
图9是根据本发明实施例的LCOS面板的硅背板的示意图。
图10是根据本发明实施例的函数f3(x),其代表参考线处的反射光的振幅,x是示出金属电极、金属柱及间隙的位置的量纲。
图11A到图11L是根据本发明实施例的制造具有高衍射率的液晶面板的工艺的示意图。
在图式中的若干个图中,对应的参考字符指示对应的组件。本领域技术人员可知,图中的元件是出于简洁及清晰起见而示出且未必按比例绘制。举例来说,可相对于其他元件而言夸大图中的元件中的一些元件的尺寸以帮助理解本发明的各种实施例。
具体实施方式
在以下说明中,述及众多具体细节以提供对本发明的全面理解。然而,对于所属领域中的技术人员而言应显而易见,实践本发明不必采用所述具体细节。在其他情形中,未详细阐述众所熟知的材料或方法以避免使本发明模糊不清。
在本说明书中提及“一个实施例”或“实施例”意指在本发明的至少一个实施例中包括结合所述实施例所阐述的特定特征、结构或特性。因此,在本说明书通篇的各种地方出现的短语“在一个实施例中”或“在实施例中”未必均指代同一实施例。此外,在一个或多个实施例中,所述特定特征、结构或特性可以任意适合的组合及/或子组合加以组合。
图1示出LCOS面板100。LCOS面板100包括硅衬底102,硅衬底102具有位于所述衬底内的硅电路。在硅衬底102上设置有多个金属电极104。金属电极104周期性地形成在硅衬底102上。在金属电极104上设置有氧化物层106。氧化物层106可为氧化硅。氧化物层106还填充相邻的金属电极104之间的间隙108。在氧化物层106上设置有第一液晶取向层110。在第一液晶取向层110上设置有液晶层112。
在透明衬底118上涂布有透明连续电极116。在透明连续电极116上设置有第二液晶取向层114。玻璃衬底118与透明连续电极116及第二液晶取向层114一起设置在液晶层112上,其中第二液晶取向层114紧邻液晶层112。
每一金属电极104与透明连续电极116形成LCOS面板100的像素120。透明连续电极116可为金属电极104的对应电极(counterpart electrode)。
图2示出根据本发明实施例的被准直激光束(collimated laser beam)202照射的处于关闭状态中的LCOS面板200。激光束202通过LCOS面板200(LCOS面板200包括由金属电极104构成的周期性结构)衍射。经衍射的激光束包括零阶衍射束204及四个一阶衍射束206。
图3示出根据本发明实施例的展示零阶衍射束204及四个一阶衍射束206的屏幕300。衍射率(Diffraction Ratio,DR)定义如下。
图4示出图1所示LCOS面板100的LCOS硅背板400。参考线402位于金属电极104的顶部处。在实施例中,参考线402处的反射光404的振幅与金属电极104处的反射光404的振幅是统一的。参考线402处及间隙108处的反射光406的振幅为零,原因是参考线402处及间隙108处的入射光408透射到硅衬底102。
图5示出根据本发明实施例的函数f1(x),其代表参考线402处的反射光的振幅,x是示出金属电极104及间隙108的位置的维度(dimension)。根据衍射原理,零阶衍射束的强度给出如下。
零阶强度=|零阶振幅|2 (2)
[零阶振幅]1=∫f1(x)dx (3)
图6示出根据本发明实施例的LCOS硅背板600。LCOS硅背板600包括硅衬底102,硅衬底102具有位于所述衬底内的硅电路。在硅衬底102上设置有多个金属电极104。金属电极104周期性地形成在硅衬底102上。每一金属电极与其他金属电极电隔离。在相邻的金属电极104之间的间隙108中设置并填充有介电材料602。金属电极104与间隙108中的介电材料602具有相同的厚度。在金属电极104及介电材料602上设置有氧化物层106。介电材料602的折射率高于氧化物层106的折射率。氧化物层106可为氧化硅。介电材料602可为氮氧化硅。
与图1相似但未在图6中示出,在LCOS硅背板600的氧化物层106上可设置有第一液晶取向层110。在第一液晶取向层110上可设置有液晶层112。在玻璃衬底118上涂布有透明连续电极116。在透明连续电极116上设置有第二液晶取向层114。玻璃衬底118与透明连续电极116及第二液晶取向层114一起设置在液晶层112上,其中第二液晶取向层114紧邻液晶层112。每一金属电极104及透明连续电极116可形成LCOS面板的像素120。透明连续电极116可为金属电极104的对应电极。
参考线402位于金属电极104的顶部处。在实施例中,参考线402处的反射光404的振幅与金属电极104处的反射光404的振幅是统一的。参考线402处及间隙108处(介电材料602与氧化物层106之间的界面)的反射光406的振幅在方程式(4)中给出。光从氧化物层106入射到介电材料602。
在实施例中,介电材料602可为具有折射率2.2的氮氧化硅,且氧化物层106可为具有折射率1.46的氧化硅。因此,以上方程式(4)变成如下。
图7示出根据本发明实施例的函数f2(x),其代表参考线402处的反射光的振幅,x是示出金属电极104及间隙108的位置的维度(dimension)。函数f2(x)不同于f1(x)。间隙108处的振幅反射度(amplitude reflectance)不为零,而是为正整数AR,0<AR<1,其在一实施例中可为0.20。根据衍射理论,零阶衍射束的强度给出如下。
零阶强度=|零阶振幅|2 (6)
[零阶振幅]2=∫f2(x)dx (7)
比较图7所示f2(x)与图5所示f1(x),由于f2(x)中的间隙具有值0.2且f1(x)中的间隙具有为零的值,因此以下结果成立。
∫f2(x)dx>∫f1(x)dx (8)
因此,以高折射介电材料填充位于电极之间的间隙的实施例的零阶强度高于以相同的氧化物层填充位于电极之间的间隙的实施例的零阶强度。
此外,以高折射介电材料填充位于电极之间的间隙的实施例的如方程式(1)中所定义的衍射率高于以相同的氧化物层填充位于电极之间的间隙的实施例的衍射率。换句话说,如图6中所示以高折射介电材料填充位于电极之间的间隙的LCOS面板与如图4或图1中所示以相同的氧化物层填充位于电极之间的间隙的LCOS面板相比具有较小的衍射。
以高折射介电材料填充位于电极之间的间隙的实施例(图6)中的氧化物层106的厚度与以相同的氧化物层填充位于电极之间的间隙的实施例(图4)中的氧化物层106的厚度相同。举例来说,氧化物层106的厚度可为0.05微米(μm)。因此,在金属电极104与透明电极116之间产生的电场的等级不改变或不受到影响。因此,图6所示LCOS硅背板600不改变或牺牲LCOS面板的对比度,而是增大LCOS面板的衍射率。
图8A到图8I示出根据本发明实施例的制造具有高衍射率的液晶面板的工艺。如图8A中所示,所述工艺以硅衬底802为开始。硅衬底802可包括位于衬底802内的硅电路。如图8B中所示,在硅衬底802上形成金属层804。举例来说,金属层804的厚度可为0.3μm。如图8C中所示,蚀刻金属层804以形成多个各别的电极806。每一金属电极与位于硅衬底802内的电路电耦合以形成LCOS面板的一个像素。每一金属电极与其他金属电极电隔离。在相邻的金属电极806之间形成间隙808。举例来说,间隙808为0.2μm宽。
如图8D中所示,介电材料810填充间隙808。在平坦化工艺(planarizationprocess)之后,金属电极806与位于间隙808中的介电材料810具有相同的厚度。举例而言,厚度可为0.3μm。如图8E中所示,在金属电极806及介电材料810上设置氧化物层812。举例来说,氧化物层812的厚度可为0.05μm。介电材料810的折射率高于氧化物层812的折射率。如图8F中所示,在氧化物层812上设置第一液晶取向层814。图8F示出硅背板824,硅背板824包括硅衬底802、金属电极806、高折射率介电材料810、氧化物层812及第一液晶取向层814。为简洁起见,将第一液晶取向层814视为硅背板824的一部分。
图8G示出包括玻璃衬底822的盖玻璃826。在玻璃衬底822上涂布透明连续电极820。在透明连续电极820上设置第二液晶取向层818。为简洁起见,将第二液晶取向层818视为盖玻璃826的一部分。图8H示出将盖玻璃826上下翻转并层压在硅背板824上且使盖玻璃826与硅背板824之间具有间隔828。第二液晶取向层818面对第一液晶取向层814。
图8I示出通过在位于盖玻璃826与硅背板824之间的间隔828中填充液晶来形成液晶层816。图8H中示出间隔828。举例来说,液晶取向层814及818的厚度可为0.025μm,液晶层816的厚度可为1.1μm,且透明连续电极820的厚度可为0.04μm。
图9示出根据本发明实施例的LCOS硅背板900。除间隙108是使用被介电材料602环绕的金属柱902填充以外,图9所示LCOS硅背板900与图6所示LCOS硅背板600相似。在实施例中,金属柱902具有统一的振幅反射度。金属柱902与相邻的电极104电隔离而形成间隙108。金属电极104、金属柱902以及间隙108中的介电材料602具有相同的厚度。与LCOS硅背板600相似,介电材料602可为具有折射率2.2的氮氧化硅,且氧化物层106可为具有折射率1.46的氧化硅。介电材料602的折射率高于氧化物层106的折射率。
图10示出根据本发明实施例的函数f3(x),其代表参考线402处的反射光的振幅,x是示出金属电极104、金属柱902及间隙108的位置的维度(dimension)。函数f3(x)不同于f2(x)。间隙108处的振幅反射度包括0.2、1及0.2。根据衍射理论,零阶衍射束的强度给定如下。
零阶强度=|零阶振幅|2 (9)
[零阶振幅]3=∫f3(x)dx (10)
比较图10所示f3(x)与图7所示f2(x),以下结果成立。
∫f3(x)dx>∫f2(x)dx (11)
因此,以环绕金属柱的高折射介电材料填充位于电极之间的间隙的实施例的零阶强度高于仅以高折射介电材料填充位于电极之间的间隙的实施例的零阶强度。换句话说,如图9中所示以环绕金属柱的高折射介电材料填充位于电极之间的间隙的LCOS面板与如图6中所示仅以高折射介电材料填充位于电极之间的间隙的LCOS面板相比具有较小的衍射。
图11A到图11L示出根据本发明实施例的制造具有高衍射率的液晶面板的工艺。如图11A中所示,所述工艺以硅衬底1102为开始。硅衬底1102可包括位于衬底1102内的硅电路。如图11B中所示在硅衬底1102上形成金属层1104。举例来说,金属层1104的厚度可为0.3μm。如图11C中所示,蚀刻金属层1104以形成多个各别的电极1106。每一金属电极与硅衬底1102内的电路电耦合以形成LCOS面板的像素。每一金属电极与其他金属电极电隔离。在相邻的金属电极1106之间形成间隙1108。举例来说,间隙1108为0.2μm宽。
如图11D中所示,在金属电极1106之上及间隙1108中形成介电材料衬层1110。可使用化学气相沉积(chemical vapor deposition,CVD)等形成衬层1110。如图11E中所示,通过各向异性蚀刻(anisotropic etching)1112蚀刻介电材料衬层1110。在各向异性蚀刻之后,如图11F中所示,介电材料衬层1110余留在间隙1108的壁处而形成被介电材料1110环绕的空间1114。衬层的水平部分被蚀刻掉,仅衬层的垂直部分余留下来。如图11G中所示,使用用于形成被介电材料1110环绕的金属柱1116的金属来填充空间1114。在将金属柱116抛光之后及在平坦化之后,金属电极1106、介电材料1110及金属柱1116具有相同的厚度。举例来说,厚度可为0.3μm。
如图11H中所示,在金属电极1106、介电材料1110及金属柱1116上设置氧化物层1118。举例来说,氧化物层1118的厚度可为0.05μm。介电材料1110的折射率高于氧化物层1118的折射率。如图11I中所示,在氧化物层1118上设置第一液晶取向层1120。图11I示出硅背板1130,硅背板1130包括硅衬底1102、金属电极1106、高折射率介电材料1110、金属柱1116、氧化物层1118及第一液晶取向层1120。为简洁起见,将第一液晶取向层1120视为硅背板1130的一部分。
图11J示出包括玻璃衬底1128的盖玻璃1132。在玻璃衬底1128上涂布有透明连续电极1126。在透明连续电极1126上设置有第二液晶取向层1124。为简洁起见,将第二液晶取向层1124视为盖玻璃1132的一部分。图11K示出将盖玻璃1132上下翻转并层压在硅背板1130上且在盖玻璃1132与硅背板1130之间具有间隔1134。第二液晶取向层1124面对第一液晶取向层1120。图11L示出通过在位于盖玻璃1132与硅背板1130之间的间隔1134中填充液晶形成液晶层122。在图11K中示出间隔1134。举例来说,液晶取向层1120及1124的厚度可为0.025μm,液晶层1122的厚度可为1.1μm,且透明连续电极1126的厚度可为0.04μm。
在实施例中,液晶面板可为单一液晶面板。在另一实施例中,液晶面板可为位于包括多个液晶面板的晶片中的液晶面板。因此,在实施例中,制造液晶面板的方法可为一种制造单一液晶面板的方法。在另一实施例中,制造液晶面板的方法可为一种同时制造晶片的多个液晶面板的方法。
尽管本文中已参照示例性实施例及用于实践本发明的最佳方式阐述了本发明,然而对于本领域技术人员而言应显而易见,在不背离本发明的精神及范围的条件下,可对本发明做出许多对各种实施例、改编版本及变型的润饰、改良及子组合。
以上权利要求书中所使用的用语不应被理解成将本发明限制于在本说明书及权利要求书中所公开的具体实施例。确切来说,应完全通过以上权利要求书来确定范围,以上权利要求书应根据权利要求解释的既定规则来理解。本说明书及各个图应相应地被视作例示性的而非约束性的。
Claims (19)
1.一种硅基液晶面板,其特征在于,包括:
硅衬底,具有位于所述硅衬底内的硅电路;
多个金属电极,设置在所述硅衬底上,其中所述多个金属电极周期性地形成在所述硅衬底上;
介电材料,设置在相邻的金属电极之间的间隙中并填充所述间隙;以及
氧化物层,设置在所述多个金属电极以及位于相邻的金属电极之间的所述间隙中的所述介电材料上,
其中所述介电材料的折射率高于所述氧化物层的折射率。
2.根据权利要求1所述的硅基液晶面板,其特征在于,还包括:
第一液晶取向层,设置在所述氧化物层上;
液晶层,设置在所述第一液晶取向层上;
盖玻璃,设置在所述液晶层上;
其中所述盖玻璃包括玻璃衬底、涂布在所述玻璃衬底上的透明连续电极及设置在所述透明连续电极上的第二液晶取向层;且
其中所述第二液晶取向层紧邻所述液晶层。
3.根据权利要求1所述的硅基液晶面板,其特征在于,所述金属电极与所述介电材料具有相同的厚度。
4.根据权利要求1所述的硅基液晶面板,其特征在于,所述介电材料是氮氧化硅。
5.根据权利要求1所述的硅基液晶面板,其特征在于,所述氧化物层是由氧化硅制成。
6.根据权利要求1所述的硅基液晶面板,其特征在于,设置在相邻的金属电极之间的所述间隙中并填充所述间隙的所述介电材料环绕所述间隙中的金属柱。
7.根据权利要求6所述的硅基液晶面板,其特征在于,所述金属电极、所述金属柱及所述介电材料具有相同的厚度。
8.一种制造硅基液晶面板的工艺,其特征在于,包括:
形成硅背板,包括:
提供硅衬底,在所述硅衬底内具有硅电路;
在所述硅衬底上形成金属层;
对所述金属层进行蚀刻,以形成多个各别的金属电极以及位于相邻的金属电极之间的间隙,其中所述金属电极中的每一个金属电极均与其他金属电极电隔离;
在相邻的金属电极之间的所述间隙中填充介电材料;以及
在各别的所述金属电极以及位于相邻的金属电极之间的所述间隙中的所述介电材料上设置氧化物层,
其中所述介电材料的折射率高于所述氧化物层的折射率。
9.根据权利要求8所述的制造硅基液晶面板的工艺,其特征在于,形成所述硅背板还包括:
在所述氧化物层上设置第一液晶取向层。
10.根据权利要求9所述的制造硅基液晶面板的工艺,其特征在于,还包括:
形成盖玻璃,所述盖玻璃包括玻璃衬底、涂布在所述玻璃衬底上的透明连续电极及设置在所述透明连续电极上的第二液晶取向层;
将所述盖玻璃与所述硅背板层压在一起且使所述盖玻璃与所述硅背板之间具有间隔,其中所述第二液晶取向层面对所述第一液晶取向层;以及
使用液晶填充所述间隔。
11.根据权利要求8所述的制造硅基液晶面板的工艺,其特征在于,还包括:
执行平坦化,以使所述金属电极与所述介电材料具有相同的厚度。
12.根据权利要求8所述的制造硅基液晶面板的工艺,其特征在于,所述介电材料是氮氧化硅。
13.根据权利要求8所述的制造硅基液晶面板的工艺,其特征在于,所述氧化物层是由氧化硅制成。
14.一种制造硅基液晶面板的工艺,其特征在于,包括:
形成硅背板,包括:
提供硅衬底,在所述硅衬底内具有硅电路;
在所述硅衬底上形成金属层;
对所述金属层进行蚀刻,以形成多个各别的金属电极以及位于相邻的金属电极之间的间隙,其中所述金属电极中的每一个金属电极均与其他金属电极电隔离;
在所述金属电极上及所述间隙中形成介电材料衬层;
对所形成的所述介电材料衬层进行蚀刻,以在所述间隙的壁上形成介电材料以及被所述介电材料环绕的空间;
使用金属填充被所述介电材料环绕的所述空间,以形成被所述介电材料环绕的金属柱;以及
在各别的所述金属电极以及位于相邻的金属电极之间的所述间隙中的所述介电材料上设置氧化物层,
其中所述介电材料的折射率高于所述氧化物层的折射率。
15.根据权利要求14所述的制造硅基液晶面板的工艺,其特征在于,形成所述硅背板还包括:
在所述氧化物层上设置第一液晶取向层。
16.根据权利要求15所述的制造硅基液晶面板的工艺,其特征在于,还包括:
形成盖玻璃,所述盖玻璃包括玻璃衬底、涂布在所述玻璃衬底上的透明连续电极及设置在所述透明连续电极上的第二液晶取向层;
将所述盖玻璃与所述硅背板层压在一起且使所述盖玻璃与所述硅背板之间具有间隔,其中所述第二液晶取向层面对所述第一液晶取向层;以及
使用液晶填充所述间隔。
17.根据权利要求14所述的制造硅基液晶面板的工艺,其特征在于,还包括:
执行平坦化,以使所述金属电极、所述金属柱及所述介电材料具有相同的厚度。
18.根据权利要求14所述的制造硅基液晶面板的工艺,其特征在于,所述介电材料是氮氧化硅。
19.根据权利要求14所述的制造硅基液晶面板的工艺,其特征在于,所述氧化物层是由氧化硅制成。
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