CN109960073A - The production method of chromatic filter layer - Google Patents
The production method of chromatic filter layer Download PDFInfo
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- CN109960073A CN109960073A CN201711435025.4A CN201711435025A CN109960073A CN 109960073 A CN109960073 A CN 109960073A CN 201711435025 A CN201711435025 A CN 201711435025A CN 109960073 A CN109960073 A CN 109960073A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Filters (AREA)
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Abstract
A kind of production method of chromatic filter layer, comprising: form black matrix layer on the transparent substrate, black matrix layer has multiple openings；The first chromatic photoresist material layer, the first chromatic photoresist material layer filling opening are formed in the opening of the first quantity, and the first chromatic photoresist material layer has the overlapping part of covering black matrix layer；Using the first light shield as mask, the first chromatic photoresist material layer is exposed；First light shield has polygonal openings and the transmitance transition region positioned at aperture at least one side edge；Aperture is located at right above opening；Develop to the first chromatic photoresist material layer after being exposed, so that overlapping part becomes the form with undercut construction after development；The first chromatic photoresist material layer after developing is toasted, so that the overlapping part of undercut construction collapses, to reduce the final thickness of overlapping part, forms the first chromatic filter layer.The production method raising is formed by chromatic filter layer quality.
Description
Technical field
The present invention relates to field of liquid crystal display more particularly to a kind of production methods of chromatic filter layer.
Background technique
Usually there are colored optical filtering substrates in liquid crystal display (LCD).With the colour filter in TFT (thin film transistor (TFT))-LCD
For photopolymer substrate, liquid crystal display is with colored optical filtering substrates mainly by transparent glass substrate, black matrix layer (BM layers) and coloured silk at present
The structure compositions such as coloured light resistance layer (RGB layer).Red (R) of colored optical filtering substrates, green (G), blue (B) three primary colours are arranged by certain pattern
Column, and (pixel is by three sub-pixels with the sub-pixel on array substrate (being commonly used to fabricate corresponding thin film transistor (TFT))
Composition) it corresponds.The white light that the backlight of LCD issues is formed by penetrating colored optical filtering substrates by red, green and blue color contamination
Each color light after conjunction obtains color representation abundant according to corresponding colour mixture principle.
In order to guarantee the color uniformity of colored optical filtering substrates and prevent light leakage, each chromatic filter layer and black matrix layer it
Between, generally there are the overlappings of one fixed width.In the manufacturing process of conventional color optical filtering substrate, each chromatic filter layer and black matrix
In overlapping (overlap joint) region of layer, the height of laminate portion is higher compared with other regions, so that biggish angle segment difference can be generated, and this
The angle segment difference of sample can make to be deteriorated with the subsequent liquid crystal molecule mobility being in contact with oriented layer, and then generate pressing color difference etc. to ask
Topic, influences display effect.
For this reason, it may be necessary to a kind of production method of new chromatic filter layer, to improve the quality with corresponding chromatic filter layer.
Summary of the invention
The production method that problems solved by the invention is to provide a kind of chromatic filter layer is formed by colorized optical filtering to improve
The quality of layer.
To solve the above problems, the present invention provides a kind of production method of chromatic filter layer, comprising: shape on the transparent substrate
At black matrix layer, the black matrix layer has multiple openings；Negativity photoresist is formed in the opening of the first quantity
First chromatic photoresist material layer, the first chromatic photoresist material layer fill the opening, and the first chromatic photoresist material
Layer has the overlapping part for covering the black matrix layer；Using the first light shield as mask, to the first chromatic photoresist material
Layer is exposed；First light shield has polygonal openings and the transmitance gradual change positioned at the aperture at least one side edge
Area；The aperture is located at right above the opening；The transmitance of the transmitance transition region is lower than the transmitance of the aperture, but
Higher than the transmitance of the first light shield other parts；The first chromatic photoresist material layer after the progress exposure is carried out
Development, so that the overlapping part becomes the form with undercut construction after development；To carry out after the development described the
One chromatic photoresist material layer is toasted, so that the overlapping part of undercut construction collapses, to reduce described overlapping
Partial final thickness forms the first chromatic filter layer.
Optionally, transmitance of the transmitance transition region from backwards to the aperture side to close to the aperture side becomes
Law are as follows: from high gradually to low, then from low gradually to height.
Optionally, the transmitance of the transmitance transition region is 15%~50%.
Optionally, the transmitance of the transmitance transition region is 20%~22%.
Optionally, the width of the transmitance transition region is 2 μm~5 μm.
Optionally, the distance of orthographic projection of the transmitance transition region in the black matrix layer to the opening is 0.5 μ
M~1.5 μm.
Optionally, after the undercut construction collapses, the maximum gauge range of the overlapping part is 0 μm~0.15 μm.
Optionally, after the undercut construction collapses, the overlapping part has the gentle base angle in base angle and smooth apex angle, institute
The angular range for stating gentle base angle is 30 °~45 °, and the angular range of the smooth apex angle is 120 °~160 °.
Optionally, the opening and the aperture is rectangle, and multiple openings are integrally in the arrangement of ranks dot matrix, described the
One chromatic photoresist material layer arow is covered and is open described in same row, and the transmitance transition region is set to one group pair of the rectangle
Side edge, and the opposite side that the transmitance transition region is arranged is parallel to the column.
Optionally, the opening and the aperture are rectangle, and the first chromatic photoresist material layer includes multiple isolated
Rectangle sublayer, each rectangle sublayer cover an opening, and the transmitance transition region is set to the two of the rectangle
Group opposite side edge.
Optionally, the production method further include: the of negativity photoresist is formed in the opening of the second quantity
Two chromatic photoresist material layers, the second chromatic photoresist material layer fill the opening, and the second chromatic photoresist material layer
With the overlapping part for covering the black matrix layer；Using the second light shield as mask, to the second chromatic photoresist material layer
It is exposed；Second light shield has polygonal openings and the transmitance transition region positioned at the aperture at least one side edge；
The aperture is located at right above the opening；The transmitance of the transmitance transition region is lower than the transmitance of the aperture, but high
In the transmitance of the second light shield other parts；The second chromatic photoresist material layer after the progress exposure is shown
Shadow, so that the overlapping part becomes the form with undercut construction after development；To described second after the progress development
Chromatic photoresist material layer is toasted, so that the overlapping part of undercut construction collapses, to reduce the overlap
The final thickness divided, to form the second chromatic filter layer.
Optionally, the production method further include: the of negativity photoresist is formed in the opening of third quantity
Three chromatic photoresist material layers, the third chromatic photoresist material layer fill the opening, and the third chromatic photoresist material layer
With the overlapping part for covering the black matrix layer；Using third light shield as mask, to the third chromatic photoresist material layer
It is exposed；The third light shield has polygonal openings and the transmitance transition region positioned at the aperture at least one side edge；
The aperture is located at right above the opening；The transmitance of the transmitance transition region is lower than the transmitance of the aperture, but high
In the transmitance of the third light shield other parts；The third chromatic photoresist material layer after the progress exposure is shown
Shadow, so that the overlapping part becomes the form with undercut construction after development；To the third after the progress development
Chromatic photoresist material layer is toasted, so that the overlapping part of undercut construction collapses, to reduce the overlap
The final thickness divided, to form third chromatic filter layer.
Compared with prior art, technical solution of the present invention has the advantage that
In method provided by technical solution of the present invention, by the way that corresponding transmitance transition region is arranged in the first light shield,
To realize the adjustment to the exposure intensity of the first chromatic photoresist of overlapping part material layer in black matrix layer.On the one hand, to being located at
First chromatic photoresist material layer of opening still exposes it by the aperture of the first light shield completely；On the other hand, right
Overlapping part the first chromatic photoresist material layer in black matrix layer, then the transmitance gradual change specially designed by the first light shield
Area realizes the purpose for reducing exposure intensity.The exposure received to the first chromatic photoresist of relative reduction overlapping part material layer
Intensity achievees the effect that reduce the first chromatic filter layer of overlapping part thickness, improves and be formed by the first chromatic filter layer matter
Amount realizes reduction or avoids angle segment difference, realizes the optimization of diagonal segment difference in other words.This production method is not needed to phase
The exposure sources answered are improved, and also having no need to change the exposure intensity of equipment itself, (equipment itself is still only needed using system
One exposure intensity is exposed), so that it may it realizes corresponding effect, not only saves cost, and convenient for continuing to use common work
Skill condition and step directly carry out.
Detailed description of the invention
Fig. 1 to Fig. 3 is each step counter structure schematic diagram of existing production method.
Each step counter structure schematic diagram of production method provided by Fig. 4 to Fig. 8 embodiment of the present invention.
Specific embodiment
Referring to FIG. 1, if directlying adopt the forming process that existing common light shield carries out chromatic filter layer, it is corresponding to walk
It suddenly can be shown referring to figs. 1 to Fig. 3.
Black matrix layer 110 is formed on transparent substrate 100, black matrix layer 110 has multiple openings, only shows it in Fig. 1
In one opening 111 as represent.
Later, with reference to Fig. 1 and Fig. 2, the first color filter materials layer 120 is formed in the opening 111 in Fig. 1, then, is used
Light shield 130 is exposed the first color filter materials layer 120.
Later, referring to figs. 2 and 3,120 further progress of the first color filter materials layer development after exposure and baking etc.
Step, to become the first chromatic filter layer 120z.Later, above-mentioned identical process is repeated, thus in the other of black matrix layer
The second chromatic filter layer 140z and third chromatic filter layer 150z are formed in opening.
In finally formed structure, since the lap of each color filter materials layer and black matrix layer has larger thickness
(the first color filter materials layer 120 partially overlapping in black matrix layer 110 with larger thickness is shown in such as Fig. 2), causes
Angle segment difference (ox horn, the overlapping portion being previously mentioned in the background technology are deposited between finally formed each chromatic filter layer and black matrix layer
Divide thickness too big), as shown in Figure 3.
For this purpose, the present invention provides a kind of forming method of new chromatic filter layer, by each color filter materials layer with
The lap of black matrix layer, is exposed intensity adjustment, to control corresponding overlapped thickness, to avoid that above-mentioned there are larger
The case where thickness is overlapped and there are angle segment differences, the pattern of chromatic filter layer, improves the performance of chromatic filter layer after optimization is formed, into
And the quality of corresponding colored optical filtering substrates is improved, so that the liquid crystal display panel using the colored optical filtering substrates shows matter
Amount improves.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of production method of chromatic filter layer, including step 1 to step 5, incorporated by reference to reference
Fig. 4 to Fig. 8.
Step 1, black matrix layer is formed on the transparent substrate, and black matrix layer has multiple openings.
Referring to FIG. 4, transparent substrate 200 can be glass substrate.Black matrix layer 210 can using existing production method into
Row production.Black matrix layer 210 is for playing shading performance, photo absorption performance and impedance.
In Fig. 4, show that one of opening 211 in multiple openings is representative.
Step 2, the first chromatic photoresist material layer of negativity photoresist is formed in the opening of the first quantity, first is colored
Photoresist layer filling opening, and the first chromatic photoresist material layer has the overlapping part of covering black matrix layer.
In Fig. 5 by taking above-mentioned Fig. 4 opening 211 is by the covering of the first chromatic photoresist material layer 220 as an example, illustrated.
In the present embodiment, the forming method of the first chromatic photoresist material layer 220 can be coating method.It specifically can be into one
Step is slot coated method.
The property of negativity photoresist are as follows: the part being irradiated by light will not be removed by subsequent developing liquid developing, and remaining is not
It the region irradiated by light will developed liquid development removal.The material of first chromatic photoresist material layer 220 is negativity photoresist material
Material.
It should be noted that it is previously noted that black matrix layer has multiple openings, and in step 2, only opening in the first quantity
The first chromatic photoresist material layer is formed in mouthful.At this point, the first quantity is relevant to opening sum, in general, the first quantity is root
Depending on the chromatic filter layer type of required formation.For example, it is desired to which the first quantity is all when forming three kinds of chromatic filter layers
The one third of opening, and when to form four kinds of chromatic filter layers, the first quantity is a quarter being all open.Namely
It says, if form N kind chromatic filter layer, the first quantity is N/mono- of opening total quantity.
In the present embodiment, the overlapping part of the first chromatic photoresist material layer 220 and black matrix layer 210, width range can
To control between 3 μm~6 μm.If the width of overlapping part is controlled less than 3 μm, once corresponding technique can not be right well
It is quasi-, it is possible to cause the rough sledding such as light leakage.The width of overlapping part is if it is greater than 6 μm, corresponding first chromatic photoresist material
Layer 220 can largely cover black matrix layer 210, and subsequent first chromatic photoresist material layer 220 is caused to form the corresponding first colored filter
After photosphere 220y (referring to this specification subsequent content), when being subsequently formed a kind of lower chromatic photoresist material layer, a kind of lower colourama
Resistance material layer and the first chromatic filter layer 220y have more lap, eventually lead to a kind of lower chromatic filter layer and first
More serious (such as shown in Fig. 3) is overlapped between chromatic filter layer 220y, is unfavorable for improving the property of entire colored optical filtering substrates.
Step 3, the first chromatic photoresist material layer is exposed as mask using the first light shield.First light shield has
Polygonal openings and transmitance transition region positioned at aperture at least one side edge.Aperture is located at right above opening.Transmitance gradual change
The transmitance in area is lower than the transmitance of aperture, but is higher than the transmitance of the first light shield other parts.
Step 3 equally can be with continued reference to Fig. 5, and the setting of the first light shield 230 is in transparent substrate 200, black matrix layer 210 and the
One chromatic photoresist material layer, 220 top, aperture (not marking) is between transmitance transition region 231.
In the present embodiment, since the first chromatic photoresist material layer 220 is located in opening 211, when aperture is located at opening
When surface, aperture also is located at the surface of the first chromatic photoresist material layer 220 in opening.But the range of aperture ratio is opened
Mouth is big, and therefore, there are also small part apertures to be located at right above the first chromatic photoresist material layer 220 of overlapping part.
In the present embodiment, the distance of orthographic projection of the transmitance transition region 231 in black matrix layer 210 to opening 211 is set
For 0.5 μm~1.5 μm (opening 211 is filled by the first chromatic photoresist material layer 220 at this time).That is, usual aperture
Range be slightly greater than opening range.The the first chromatic photoresist material overlapped with 210 edge of black matrix layer is helped so that in this way
The bed of material 220 also receive as far as possible do not block exposure effect, thus keep this part the first chromatic photoresist material layer 220 subsequent at
For a part of the first chromatic filter layer 220y (reference book subsequent content), it is ensured that the first chromatic filter layer 220y and black square
Battle array layer 210 between contact action it is preferable, so that it is guaranteed that black matrix layer 210 play the role of it is corresponding.
In the present embodiment, the transmitance of transmitance transition region 231 is lower than the transmitance of aperture, and the transmitance of aperture is usually
100%, but the transmitance of transmitance transition region 231 be higher than 230 other parts of the first light shield transmitance, the first light shield 230 its
Its part is also commonly referred to as non-aperture segment, and the transmitance of this part is usually closer to 0.
In the present embodiment, the width of transmitance transition region 231 can be 2 μm~5 μm.The width of transmitance transition region 231
Width to above-mentioned overlapping part (i.e. the overlapping part of the first chromatic photoresist material layer 220 and black matrix layer 210) be it is relevant,
It and is relevant at a distance from the orthographic projection in black matrix layer 210 to opening 211 with aforementioned transmitance transition region 231.Before
Face is mentioned, and the width of above-mentioned overlapping part can control at 3 μm~6 μm, at this point, considering front transmitance transition region simultaneously
231 orthographic projection in black matrix layer 210 to opening 211 distance (0.5 μm~1.5 μm), to will transmit through rate transition region 231
Width be set as 2 μm~5 μm, in this way, transmitance transition region 231 can be in exposure process, well to exposing
The first chromatic photoresist of part material layer 220 of luminous intensity adjustment is blocked, and realizes transmitance transition region 231 to exposure light
Partial occlusion effect, to realize adjustment to corresponding region exposure intensity.
In conjunction with above content it is found that the function of transmitance transition region 231 is different from aperture (not stopping light completely), also with
The non-aperture segment of first light shield 230 is (substantially completely opaque) different, but falls between, and is hidden to the part of light
Gear.
In the present embodiment, the transmitance that transmitance transition region can further be arranged is 15%~50%, to reach pair
The adjustment of 220 exposure intensity of the first chromatic photoresist of overlapping part material layer.
In the selection of more preferably range, the transmitance of transmitance transition region 231 can be 20%~22%.It concentrates in this model
In enclosing, the accurate adjustment in particular range can be carried out to the exposure intensity of the first chromatic photoresist of overlapping part material layer 220, is protected
Demonstrate,prove the progress of subsequent step.
In being preferably provided with, transmitance transition region 231 is arranged from backwards to aperture side to close aperture side in the present embodiment
Transmitance changing rule are as follows: from high gradually to low, then from low gradually to height.
Show that the transmitance of 230 each section of the first light shield changes with dotted line in Fig. 5.Wherein, 231 part of transmitance transition region
Transmitance the case where " both ends high, intermediate low " are presented, this is exactly that transmitance changing rule is " from high gradually to low, then from low
Gradually arrive height " embodiment.And the occurrence of these transmitances, it can be in the range of above-mentioned 15%~50% and 20%~22%
It is selected.
In the present embodiment, it is open and aperture is rectangle, multiple openings are integrally in ranks dot matrix arrangement (not shown), and first
220 arow of chromatic photoresist material layer covers same row opening.Correspondingly, transmitance transition region 231 is set to one group pair of rectangle
Side edge (corresponding aforementioned at least one side edge), and the opposite side that transmitance transition region is arranged is parallel to column.In this set, phase
When then in a column direction, the first chromatic photoresist material layer 220 is without the concern for overlapping problem.Because first is color at this time
Color photoresist layer 220 is permutation covering corresponding opening and corresponding black matrix layer.But in the row direction, first is colored
Photoresist layer 220 then needs to prevent subsequent the first chromatic filter layer 220y (reference book subsequent content) that it is formed with after
The continuous other chromatic filter layers being further formed largely overlap, and generate aforementioned angle segment difference, and therefore, it is necessary in the row direction, be arranged
Corresponding transmitance transition region 231, therefore, there have been the opposite side for being provided with transmitance transition region 231 be parallel to column (or
It says, the particular link between the corresponding two transmitance transition regions 231 of an aperture at this time, perpendicular to " column " and can be parallel to
" row ").It exactly while being shown at this point, an aperture on the first light shield 230 is corresponding there are two transmitance transition region 231, in Fig. 5
Two transmitance transition regions 231, it is seen then that Fig. 5 is parallel to " to go " direction and carries out the cross-section structure that cutting obtains.
It should be noted that in other embodiments of the present invention, being also possible to another setting: opening and aperture are square
Shape, the first chromatic photoresist material layer include multiple isolated rectangle sublayers, and each rectangle sublayer covers an opening, and transmitance is gradually
Become two groups of opposite side edges (corresponding aforementioned at least one side edge) that area is set to rectangle.Its reason can refer to previous setting, this
When, the part for considering the overlapping of different chromatic filter layers, therefore, (two groups pairs in two directions are required in two directions
Bian Shang, total four edges), setting transmitance transition region is respectively necessary for (therefore, there are four an aperture on light shield corresponds at this time
Transmitance transition region).
In the present embodiment, by the way that corresponding transmitance transition region 231 is arranged, realize to above-mentioned the first colourama of overlapping part
The exposure intensity correction for hindering material layer 220 (it is strong to adjust the received exposure of the first chromatic photoresist of overlapping part material layer 220 in other words
Degree), to reduce the thickness of the first chromatic filter layer 220y of overlapping part after subsequent development.Specifically, gradually due to transmitance
The setting for becoming area 231, corresponding to the received exposure of overlapping part the first chromatic photoresist material layer immediately below transmitance transition region 231
Luminous intensity is opposite to weaken for the exposure intensity immediately below aperture.Therefore, the first chromatic photoresist of overlapping part material layer
In 220, a part of cross-link intensity is relatively low at least within.Therefore, in Fig. 5, cross-link intensity biggish part region 221
It has been shown that, the lesser part region 222 of cross-link intensity indicates.That is, the first chromatic photoresist material layer includes region at this time
221 and region 222.
Step 4, develop to the first chromatic photoresist material layer after being exposed, so that after development, overlapping part
As the form with undercut construction.
After completion of the exposure, subsequent when being developed, since 221 cross-link intensity of region is low, the overlapping part in this region
The developed ratio got rid of of first chromatic photoresist material layer 220 will increase, and therefore, be retained in corresponding black matrix layer 210
220 ratio of the first chromatic photoresist of overlapping part material layer reduces (part that the part remained is substantially region 222), thus
So that the first chromatic filter layer 220y being eventually located in black matrix layer 210 has relatively thin thickness, and then prevent different
It is largely mutually overlapped between chromatic filter layer and generates angle segment difference (ox horn).
In the present embodiment, the undercut construction is referred to: overlapping part the first chromatic photoresist material layer 220x exists after development
There is the base angle greater than 90 degree in black matrix layer 210.This structure is the equal of that the overlapping part of bottom is cut off inwards, is formed
Top width is greater than the form of bottom width, therefore, referred to as undercut construction.Also it is exactly this undercut construction, is just easy subsequent
In technical process, collapse.
As previously mentioned, this step is exactly utilized in the low region 221 of cross-link intensity, corresponding the first colourama of overlapping part
Resistance material layer 220 is easy developed removal, so that the first chromatic photoresist material layer 220x after development be made to have undercut construction
Form, as shown in the figure 6.
Step 5, the first chromatic photoresist material layer after developing is toasted, so that the overlapping part of undercut construction
It collapses, to reduce the final thickness of overlapping part, forms the first chromatic filter layer.
In steps of 5, since what is toasted is undercut construction overlapping part that front is formed, undercut construction exists
Under gravity and Baking out effect, meeting naturally-occurring is collapsed, and after collapsing, the final thickness of overlapping part can reduce very naturally
It is more.
Specifically, becoming overlapping part most again after the first chromatic photoresist material layer 220x of undercut construction is collapsed
Big thickness range is only 0 μm~0.15 μm.And in existing method, usually corresponding overlapping part maximum gauge range is 0.3 μm
~0.55 μm, it is seen that the present embodiment reduces the maximum gauge of the overlapping part.
It is more importantly that, due to being to undercut structural collapse under gravity and Baking out effect, final later is overlapping
Part the first chromatic filter layer 220y can have good gentle form, as shown in Figure 7.In this gentle form, overlapping part
(overlapping part at this time is the overlapping part after undercut construction collapses) has gentle base angle, as dotted line frame i surrounds institute in Fig. 7
Show, and overlapping part has smooth apex angle, as shown in being surrounded dotted line frame j in Fig. 7.
The angular range at the gentle base angle for using above method step to obtain is 30 °~45 °, the angular range of smooth apex angle
It is 120 °~160 °.And in existing method, the overlapping part base angle angular range of formation, which is usually 45 °~80 °, (can refer to figure
2), corner angle is generally in the range of 60 °~100 ° (can refer to Fig. 2), it is seen then that the present embodiment becomes corresponding base angle range
Small, apex angle range increases, and integrally makes the metamorphosis of overlapping part gentler, forms that overall structure is gentle, overlapping part
The lesser first chromatic filter layer 220y of thickness.
Since the present embodiment has adjusted corresponding gentle base angle range, smooth apex angle range, and friendship is had adjusted in front
Folded part maximum gauge range, therefore, the present embodiment may be implemented it is subsequent do not occur corresponding angle segment difference, corresponding each layer is
To planarization, to improve the quality of corresponding colored optical filtering substrates made in this way.
In method provided by the present embodiment, by the way that corresponding transmitance transition region 231 is arranged in the first light shield 230,
To realize the adjustment (correction) to the exposure intensity (energy) of the overlapping part.On the one hand, color to be located at opening first
Color photoresist layer 220 still exposes it by the aperture of the first light shield 230 completely；On the other hand, black to being located at
The first chromatic photoresist of overlapping part material layer 220 in matrix layer 210, the then transmitance specially designed by the first light shield 230
The purpose for reducing exposure intensity is realized in transition region 231.To which the first chromatic photoresist of relative reduction overlapping part material layer 220 connects
The exposure intensity received achievees the effect that reduce the first chromatic filter layer of overlapping part 220y thickness, improves and be formed by the
One chromatic filter layer 220y mass realizes reduction or avoids angle segment difference, realizes the optimization of diagonal segment difference in other words.It is this
Production method does not need to improve corresponding exposure sources, haves no need to change exposure intensity (the equipment sheet of equipment itself yet
Body still only needs to be exposed using unified exposure intensity), so that it may it realizes corresponding effect, not only saves cost, and
And it is directly carried out convenient for continuing to use common process conditions and step.
The present embodiment above-mentioned steps are the first chromatic filter layer of the correspondence 220y completed to a portion opening
Production, can be with further progress following steps in the present embodiment subsequent step:
The second chromatic photoresist material layer of negativity photoresist, the second chromatic photoresist material are formed in the opening of the second quantity
Bed of material filling opening, and the second chromatic photoresist material layer has the overlapping part of covering black matrix layer；Using the second light shield conduct
Mask is exposed the second chromatic photoresist material layer；Second light shield has polygonal openings and is located at aperture at least one side side
The transmitance transition region of edge；Aperture is located at right above opening；The transmitance of transmitance transition region is lower than the transmitance of aperture, but high
In the transmitance of the second light shield other parts；Develop to the second chromatic photoresist material layer after being exposed, so that development
Later, overlapping part becomes the form with undercut construction；The second chromatic photoresist material layer after developing is toasted,
So that the overlapping part of undercut construction collapses, to reduce the final thickness of overlapping part, the second chromatic filter layer is formed
240y。
It, can be with further progress following steps after the formation for having carried out the second chromatic filter layer:
The third chromatic photoresist material layer of negativity photoresist, third chromatic photoresist material are formed in the opening of third quantity
Bed of material filling opening, and third chromatic photoresist material layer has the overlapping part of covering black matrix layer；Using third light shield conduct
Mask is exposed third chromatic photoresist material layer；Third light shield has polygonal openings and is located at aperture at least one side side
The transmitance transition region of edge；Aperture is located at right above opening；The transmitance of transmitance transition region is lower than the transmitance of aperture, but high
In the transmitance of third light shield other parts；Develop to the third chromatic photoresist material layer after being exposed, so that development
Later, overlapping part becomes the form with undercut construction；Third chromatic photoresist material layer after developing is toasted,
So that the overlapping part of undercut construction collapses, to reduce the final thickness of overlapping part, third chromatic filter layer is formed
250y。
The process of above-mentioned formation the second chromatic filter layer 240y and third chromatic filter layer 250y is to be repeated to form first
The process of chromatic filter layer 220y, therefore, their detailed process can refer to the aforementioned corresponding content of this specification.Correspondingly,
Above-mentioned second quantity and third quantity are usually equal with the first quantity.
After above-mentioned steps, the present embodiment forms structure as shown in Figure 8, is located at transparent substrate specifically, having
Black matrix layer 210 on 200, and it is located at the black matrix layer 210 is respectively open in (opening refers to foregoing teachings) first colored filter
Photosphere 220y, the second chromatic filter layer 240y and third chromatic filter layer 250y.It can be seen that the method using the present embodiment is opened
In each chromatic filter layer of hair, mutual overlapping part very little, thickness is lower, and this improves each layer chromatic filter layers
Surface flatness (can be compared with reference to Fig. 3).
It should be noted that the present embodiment is subsequent can also to carry out protective layer after the production for completing above structure
(material of transparency conducting layer can be ITO layer, can be produced on transparent substrate front for (Over Coat, OC), transparency conducting layer
Or reverse side) and spacer column (Photo Spacer, PS) isostructural production, so that it is more comprehensive further to complete structure function
Colored optical filtering substrates.Wherein, transparency conducting layer also can be omitted.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of production method of chromatic filter layer characterized by comprising
Black matrix layer is formed on the transparent substrate, and the black matrix layer has multiple openings；
The first chromatic photoresist material layer of negativity photoresist, first colourama are formed in the opening of the first quantity
It hinders material layer and fills the opening, and the first chromatic photoresist material layer has the overlapping part for covering the black matrix layer；
Using the first light shield as mask, the first chromatic photoresist material layer is exposed；First light shield has more
Side shape aperture and transmitance transition region positioned at the aperture at least one side edge；The aperture is located at right above the opening；
Develop to the first chromatic photoresist material layer after the progress exposure, so that after development, the overlap
It is divided into the form with undercut construction；
The first chromatic photoresist material layer after the progress development is toasted, so that the overlap of undercut construction
Distribution life collapses, to reduce the final thickness of the overlapping part, forms the first chromatic filter layer.
2. manufacturing method according to claim 1, which is characterized in that the transmitance transition region is from backwards to the aperture one
Side is to the transmitance changing rule close to the aperture side are as follows: from high gradually to low, then from low gradually to height.
3. manufacturing method according to claim 1, which is characterized in that the transmitance of the transmitance transition region be 15%~
50%.
4. manufacturing method according to claim 1, which is characterized in that the transmitance of the transmitance transition region be 20%~
22%.
5. manufacturing method according to claim 1, which is characterized in that the width of the transmitance transition region is 2 μm~5 μ
m。
6. manufacturing method according to claim 1, which is characterized in that the transmitance transition region is in the black matrix layer
Orthographic projection to the opening distance be 0.5 μm~1.5 μm.
7. manufacturing method according to claim 1, which is characterized in that after the undercut construction collapses, the overlap
The maximum gauge range divided is 0 μm~0.15 μm.
8. manufacturing method according to claim 1, which is characterized in that after the undercut construction collapses, the overlap
Dividing has the gentle base angle in base angle and smooth apex angle, and the angular range at the gentle base angle is 30 °~45 °, the smooth apex angle
Angular range is 120 °~160 °.
9. manufacturing method according to claim 1, which is characterized in that the opening and the aperture are rectangle, Duo Gesuo
It is whole in the arrangement of ranks dot matrix to state opening, the first chromatic photoresist material layer arow is covered and is open described in same row, described
Transmitance transition region is set to one group of opposite side edge of the rectangle, and the opposite side that the transmitance transition region is arranged is parallel to institute
State column.
10. manufacturing method according to claim 1, which is characterized in that the opening and the aperture are rectangle, described the
One chromatic photoresist material layer includes multiple isolated rectangle sublayers, and each rectangle sublayer covers an opening, described
Transmitance transition region is set to two groups of opposite side edges of the rectangle.
11. manufacturing method according to claim 1, which is characterized in that further include:
The second chromatic photoresist material layer of negativity photoresist, second colourama are formed in the opening of the second quantity
It hinders material layer and fills the opening, and the second chromatic photoresist material layer has the overlapping part for covering the black matrix layer；
Using the second light shield as mask, the second chromatic photoresist material layer is exposed；Second light shield has more
Side shape aperture and transmitance transition region positioned at the aperture at least one side edge；The aperture is located at right above the opening；
The transmitance of the transmitance transition region is lower than the transmitance of the aperture, but is higher than the transmission of the second light shield other parts
Rate；
Develop to the second chromatic photoresist material layer after the progress exposure, so that after development, the overlap
It is divided into the form with undercut construction；
The second chromatic photoresist material layer after the progress development is toasted, so that the overlap of undercut construction
Distribution life collapses, to reduce the final thickness of the overlapping part, to form the second chromatic filter layer.
12. production method according to claim 11, which is characterized in that further include:
The third chromatic photoresist material layer of negativity photoresist, the third colourama are formed in the opening of third quantity
It hinders material layer and fills the opening, and the third chromatic photoresist material layer has the overlapping part for covering the black matrix layer；
Using third light shield as mask, the third chromatic photoresist material layer is exposed；The third light shield has more
Side shape aperture and transmitance transition region positioned at the aperture at least one side edge；The aperture is located at right above the opening；
The transmitance of the transmitance transition region is lower than the transmitance of the aperture, but is higher than the transmission of the third light shield other parts
Rate；
Develop to the third chromatic photoresist material layer after the progress exposure, so that after development, the overlap
It is divided into the form with undercut construction；
The third chromatic photoresist material layer after the progress development is toasted, so that the overlap of undercut construction
Distribution life collapses, to reduce the final thickness of the overlapping part, to form third chromatic filter layer.
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