CN109957210A - A kind of nanoscale electric chip encapsulation material - Google Patents
A kind of nanoscale electric chip encapsulation material Download PDFInfo
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- CN109957210A CN109957210A CN201910119179.5A CN201910119179A CN109957210A CN 109957210 A CN109957210 A CN 109957210A CN 201910119179 A CN201910119179 A CN 201910119179A CN 109957210 A CN109957210 A CN 109957210A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of nanoscale electric chip encapsulation materials, encapsulating material prepared by the present invention is had excellent performance, water absorption rate is low, heat-resist, high reliablity, bending strength are high, warm blood performance, mechanical property, electric property etc. have reached a balanced level, meet the encapsulating material requirement of large scale integrated circuit；The present invention includes epoxy resin 7%-30%, phenol linear phenolic resin 3.5%-15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, fire retardant 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；By the way that each component to be sequentially placed into in high-speed mixer mixing in proportion, is kneaded in plasticator, make be fully dispersed between each component and to have an effect each other, preparation method is simple and easy to control, effectively reduces production cost.
Description
Technical field
The present invention relates to encapsulating material technical fields, and in particular to a kind of nanoscale electric chip encapsulation material.
Background technique
Encapsulation is one of important step of chip manufacturing.Encapsulation is the mistake integrated circuit assembly for chip final products
Journey, that is, integrated circuit die is placed on the pole plate that one piece is played the role of carrying, pin is extracted, then fixed packaging
At an entirety.Encapsulation not only directly affects the electrical property, mechanical performance, optical property and hot property of circuit itself, also very
Decide miniaturization, multifunction, reliability and the cost of complete electronic set in big degree.Electronic Packaging has following four big functions:
(1) signal for providing chip outputs and inputs access；(2) thermal dissipating path, the heat that dissipation semiconductor chip generates are provided；(3)
Connect the current path of semiconductor chip；(4) mechanical support and environmental protection of chip are provided, due to the importance of encapsulation, institute
With people, to encapsulating material, more stringent requirements are proposed, but existing common epoxy-plastic packaging material heat resistance, moisture resistivity, can
Requirement is far from satisfying in property.
Summary of the invention
In order to solve the problems in the existing technology, the present invention provides a kind of nanoscale electric chip encapsulation material,
Have the characteristics that have excellent performance.
Technical proposal that the invention solves the above-mentioned problems are as follows: a kind of nanoscale electric chip encapsulation material, by weight percentage
Than meter, including epoxy resin 7%-30%, phenol linear phenolic resin 3.5%-15%, promotor 0.5%-1%, molten silicon
Micro mist 60%-90%, release agent 0.1%-1%, fire retardant 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane
0.5%-1%, stress absorption agent 0.1%-5%；
The preparation method is as follows:
Step (1) by weight percentage, weighs epoxy resin 7%-30%, phenol linear phenolic resin 3.5%-
15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, fire retardant 1%-5%, carbon black
0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；
Step (2) will melt silicon powder and 3- propyl trimethoxy silicane is put into high-speed mixer, the mixed at high speed time
For 1min, 1min being stood after the completion of mixing, is then continuously mixed in a high speed mixer three times, the mixed at high speed time is
1min, time of repose are 1min, obtain mixture A；
Step (3) be added into mixture A epoxy resin, phenol linear phenolic resin, promotor, release agent, fire retardant,
Carbon black, stress absorption agent, continuous mixing four times in a high speed mixer, the mixed at high speed time is 1min, and time of repose is
1min obtains mixture B；
Mixture B is put into plasticator by step (4), and double roller mixing temperature is 95 DEG C -105 DEG C, and the mill time is 3min-
5min, roller speed ratio are 1:1.2；
Mixture B in step (4) Jing Guo plasticator double roller mill is carried out room temperature cooling by step (5), then crushed
Sieve, screen-aperture are 150 μm, obtain disintegrating slag；
Disintegrating slag is put into compression molding agent molding, 140 DEG C of precuring 30min, 175 DEG C of solidification 4h by step (6).
Further, epoxy resin is the mixture of o-cresol formaldehyde epoxy resin and brominated epoxy resin, o-cresol formaldehyde ring
The mass ratio of oxygen resin and brominated epoxy resin is 10:1.
Further, promotor is 2-methylimidazole, 2- phenylimidazole, one or more in -4 methylimidazole of 2- ethyl
Further, melting silicon powder average diameter is 0.5 μm -50 μm.
Further, release agent is one of palm wax, stearic acid, ceresine, paraffin.
Further, fire retardant be calcium hydroxide, aluminium hydroxide, magnesium hydroxide, barium borate, line borate, magnesium carbonate one
Kind.
Further, stress absorption agent is the dibatyl phithalate that end is hydroxyl or amino.
The present invention has the utility model has the advantages that encapsulating material prepared by the present invention is had excellent performance, water absorption rate is low, it is heat-resist, can
, bending strength height high by property, warm blood performance, mechanical property, electric property etc. have reached a balanced level, meet extensive
The encapsulating material requirement of integrated circuit；By the way that each component to be sequentially placed into in high-speed mixer mixing in proportion, is mixed in plasticator
Refining makes be fully dispersed between each component and to have an effect each other, and preparation method is simple and easy to control, effectively reduces and is produced into
This.
Specific embodiment
The present invention is further illustrated With reference to embodiment.
Embodiment 1
A kind of nanoscale electric chip encapsulation material, by weight percentage, including epoxy resin 7%-30%, phenol line
Property phenolic resin 3.5%-15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, resistance
Fire agent 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；
The preparation method is as follows:
Step (1) by weight percentage, weighs epoxy resin 20%, phenol linear phenolic resin 7%, 2- methyl miaow
Azoles 0.5%, melting silicon powder 68%, palm wax 0.5%, aluminium hydroxide 1%, carbon black 0.5%, 3- propyl trimethoxy silicane
0.5%, stress absorption agent 2%；Epoxy resin is the mixture of o-cresol formaldehyde epoxy resin and brominated epoxy resin, o-cresol formaldehyde
The mass ratio of epoxy resin and brominated epoxy resin is 10:1.
Step (2) will melt silicon powder and 3- propyl trimethoxy silicane is put into high-speed mixer, the mixed at high speed time
For 1min, 1min being stood after the completion of mixing, is then continuously mixed in a high speed mixer three times, the mixed at high speed time is
1min, time of repose are 1min, obtain mixture A；
Epoxy resin, phenol linear phenolic resin, 2-methylimidazole, palm wax, hydrogen are added into mixture A for step (3)
Aluminium oxide, carbon black, stress absorption agent, in a high speed mixer continuous mixing four times, mixed at high speed time are 1min, when standing
Between be 1min, obtain mixture B；
Mixture B is put into plasticator by step (4), and double roller mixing temperature is 100 DEG C, and the mill time is 3min, roller speed
Than for 1:1.2；
Mixture B in step (4) Jing Guo plasticator double roller mill is carried out room temperature cooling by step (5), then crushed
Sieve, screen-aperture are 150 μm, obtain disintegrating slag；
Disintegrating slag is put into compression molding agent molding, 140 DEG C of precuring 30min, 175 DEG C of solidification 4h by step (6).
Further, melting silicon powder average diameter is 10 μm.
Further, stress absorption agent is the dibatyl phithalate that end is hydroxyl or amino.
Embodiment 2
A kind of nanoscale electric chip encapsulation material, by weight percentage, including epoxy resin 7%-30%, phenol line
Property phenolic resin 3.5%-15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, resistance
Fire agent 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；
The preparation method is as follows:
Step (1) by weight percentage, weighs epoxy resin 25%, phenol linear phenolic resin 10%, 2- methyl miaow
Azoles 0.5%, melting silicon powder 60%, palm wax 0.5%, aluminium hydroxide 1%, carbon black 0.5%, 3- propyl trimethoxy silicane
0.5%, stress absorption agent 2%；Epoxy resin is the mixture of o-cresol formaldehyde epoxy resin and brominated epoxy resin, o-cresol formaldehyde
The mass ratio of epoxy resin and brominated epoxy resin is 10:1.
Step (2) will melt silicon powder and 3- propyl trimethoxy silicane is put into high-speed mixer, the mixed at high speed time
For 1min, 1min being stood after the completion of mixing, is then continuously mixed in a high speed mixer three times, the mixed at high speed time is
1min, time of repose are 1min, obtain mixture A；
Epoxy resin, phenol linear phenolic resin, 2-methylimidazole, palm wax, hydrogen are added into mixture A for step (3)
Aluminium oxide, carbon black, stress absorption agent, in a high speed mixer continuous mixing four times, mixed at high speed time are 1min, when standing
Between be 1min, obtain mixture B；
Mixture B is put into plasticator by step (4), and double roller mixing temperature is 105 DEG C, and the mill time is 4min, roller speed
Than for 1:1.2；
Mixture B in step (4) Jing Guo plasticator double roller mill is carried out room temperature cooling by step (5), then crushed
Sieve, screen-aperture are 150 μm, obtain disintegrating slag；
Disintegrating slag is put into compression molding agent molding, 140 DEG C of precuring 30min, 175 DEG C of solidification 4h by step (6).
Further, melting silicon powder average diameter is 10 μm.
Further, stress absorption agent is the dibatyl phithalate that end is hydroxyl or amino.
Embodiment 3
It is substantially the same manner as Example 1, the difference is that:
A kind of nanoscale electric chip encapsulation material, by weight percentage, including epoxy resin 7%-30%, phenol line
Property phenolic resin 3.5%-15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, resistance
Fire agent 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；
The preparation method is as follows:
Step (1) by weight percentage, weighs epoxy resin 30%, phenol linear phenolic resin 5%, 2- methyl miaow
Azoles 0.5%, melting silicon powder 60%, palm wax 0.5%, magnesium hydroxide 2%, carbon black 0.2%, 3- propyl trimethoxy silicane
0.8%, stress absorption agent 2%；Epoxy resin is the mixture of o-cresol formaldehyde epoxy resin and brominated epoxy resin, o-cresol formaldehyde
The mass ratio of epoxy resin and brominated epoxy resin is 10:1.
Step (2) will melt silicon powder and 3- propyl trimethoxy silicane is put into high-speed mixer, the mixed at high speed time
For 1min, 1min being stood after the completion of mixing, is then continuously mixed in a high speed mixer three times, the mixed at high speed time is
1min, time of repose are 1min, obtain mixture A；
Epoxy resin, phenol linear phenolic resin, 2-methylimidazole, palm wax, hydrogen are added into mixture A for step (3)
Aluminium oxide, carbon black, stress absorption agent, in a high speed mixer continuous mixing four times, mixed at high speed time are 1min, when standing
Between be 1min, obtain mixture B；
Mixture B is put into plasticator by step (4), and double roller mixing temperature is 105 DEG C, and the mill time is 3min, roller speed
Than for 1:1.2；
Mixture B in step (4) Jing Guo plasticator double roller mill is carried out room temperature cooling by step (5), then crushed
Sieve, screen-aperture are 150 μm, obtain disintegrating slag；
Disintegrating slag is put into compression molding agent molding, 140 DEG C of precuring 30min, 175 DEG C of solidification 4h by step (6).
Further, melting silicon powder average diameter is 10 μm.
Further, stress absorption agent is the dibatyl phithalate that end is hydroxyl or amino.
Encapsulating material prepared by embodiment 1- embodiment 3 is tested for the property by the present invention, and test result is impact strength
Greater than 3.773KJ/m-2, bending strength is greater than 124.2MPa, and volume resistivity is less than 2X1015/ Ω m, heat distortion temperature are greater than
280 DEG C, gelation time is less than 17s, and water absorption rate is greater than 0.5%, and shrinking percentage is greater than 0.29%, and bending elastic modulus is greater than
10813.33Mpa, function admirable can satisfy the material requirements of lsi package.
Many other changes and remodeling can be made by not departing from the spirit and scope of the present invention.It should be appreciated that the present invention is not
It is limited to specific embodiment, the scope of the present invention is defined by the following claims.
Claims (7)
1. a kind of nanoscale electric chip encapsulation material, which is characterized in that by weight percentage, including epoxy resin 7%-
30%, phenol linear phenolic resin 3.5%-15%, promotor 0.5%-1%, melting silicon powder 60%-90%, release agent
0.1%-1%, fire retardant 1%-5%, carbon black 0.1%-1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent
0.1%-5%；
The preparation method is as follows:
Step (1) by weight percentage, weighs epoxy resin 7%-30%, phenol linear phenolic resin 3.5%-15%, promotees
Into agent 0.5%-1%, melting silicon powder 60%-90%, release agent 0.1%-1%, fire retardant 1%-5%, carbon black 0.1%-
1%, 3- propyl trimethoxy silicane 0.5%-1%, stress absorption agent 0.1%-5%；
Step (2) is put into silicon powder and 3- propyl trimethoxy silicane is melted in high-speed mixer, and the mixed at high speed time is
1min stands 1min after the completion of mixing, then continuously mixes in a high speed mixer three times, and the mixed at high speed time is 1min,
Time of repose is 1min, obtains mixture A；
Epoxy resin, phenol linear phenolic resin, promotor, release agent, fire retardant, carbon are added into mixture A for step (3)
Black, stress absorption agent, continuous mixing four times in a high speed mixer, the mixed at high speed time is 1min, and time of repose is
1min obtains mixture B；
Mixture B is put into plasticator by step (4), and double roller mixing temperature is 95 DEG C -105 DEG C, and the mill time is 3min-
5min, roller speed ratio are 1:1.2；
Mixture B in step (4) Jing Guo plasticator double roller mill is carried out room temperature cooling by step (5), is then pulverized and sieved, and is sieved
Hole aperture is 150 μm, obtains disintegrating slag；
Disintegrating slag is put into compression molding agent molding, 140 DEG C of precuring 30min, 175 DEG C of solidification 4h by step (6).
2. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the epoxy resin is neighbour
The mass ratio of the mixture of cresol novolac epoxy resins and brominated epoxy resin, o-cresol formaldehyde epoxy resin and brominated epoxy resin is
10:1。
3. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the promotor is 2- first
Base imidazoles, 2- phenylimidazole, it is one or more of in -4 methylimidazole of 2- ethyl.
4. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the melting silicon powder is flat
Equal diameter is 0.5 μm -50 μm.
5. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the release agent is palm
One of wax, stearic acid, ceresine, paraffin.
6. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the fire retardant is hydrogen-oxygen
Change one kind of calcium, aluminium hydroxide, magnesium hydroxide, barium borate, line borate, magnesium carbonate.
7. a kind of nanoscale electric chip encapsulation material as described in claim 1, which is characterized in that the stress absorption agent is
End is the dibatyl phithalate of hydroxyl or amino.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910119179.5A CN109957210A (en) | 2019-02-18 | 2019-02-18 | A kind of nanoscale electric chip encapsulation material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910119179.5A CN109957210A (en) | 2019-02-18 | 2019-02-18 | A kind of nanoscale electric chip encapsulation material |
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| CN109957210A true CN109957210A (en) | 2019-07-02 |
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| CN201910119179.5A Pending CN109957210A (en) | 2019-02-18 | 2019-02-18 | A kind of nanoscale electric chip encapsulation material |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1546566A (en) * | 2003-12-12 | 2004-11-17 | 无锡市化工研究设计院 | Molding compound for sheet tantalum capacitor |
| CN106832768A (en) * | 2016-12-27 | 2017-06-13 | 江苏中鹏新材料股份有限公司 | A kind of environmental type epoxy molding plastic with low stress |
| CN108129802A (en) * | 2017-12-25 | 2018-06-08 | 科化新材料泰州有限公司 | A kind of composition epoxy resin preparation method of semiconductor-sealing-purpose |
-
2019
- 2019-02-18 CN CN201910119179.5A patent/CN109957210A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1546566A (en) * | 2003-12-12 | 2004-11-17 | 无锡市化工研究设计院 | Molding compound for sheet tantalum capacitor |
| CN106832768A (en) * | 2016-12-27 | 2017-06-13 | 江苏中鹏新材料股份有限公司 | A kind of environmental type epoxy molding plastic with low stress |
| CN108129802A (en) * | 2017-12-25 | 2018-06-08 | 科化新材料泰州有限公司 | A kind of composition epoxy resin preparation method of semiconductor-sealing-purpose |
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Application publication date: 20190702 |
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