CN109950338A - A kind of Si2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof - Google Patents
A kind of Si2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof Download PDFInfo
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- CN109950338A CN109950338A CN201910227594.2A CN201910227594A CN109950338A CN 109950338 A CN109950338 A CN 109950338A CN 201910227594 A CN201910227594 A CN 201910227594A CN 109950338 A CN109950338 A CN 109950338A
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Abstract
The present invention relates to field of nanometer material technology, and in particular to a kind of Si2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof.The Si that the present invention provides2Te3/Si2Te3In@Si nanowire heterojunction, it is located at top Si2Te3Nanometer cone length is 10um；Trunk Si2Te3/ Si nanowire diameter is 300nm；Length is 50um, the preparation method comprises the following steps: by tellurium powder and silicon powder merging ceramic crucible, ceramic crucible is put into quartz tube furnace, the silica/silicon substrate containing gold particle is placed on downstream place in quartz tube furnace again, quartz tube furnace is evacuated to < 0.1mTorr, and is purged with nitrogen, until air is excluded clean, the vacuum degree and carrier gas flux in quartz tube furnace are adjusted again, and by furnace in 20 DEG C of min‑1Under be heated to 850 DEG C, and kept for 3-5 minutes, substrate be finally rapidly cooled to room temperature, Si can be prepared2Te3/Si2Te3@Si nanowire heterojunction.The present invention prepares resulting Si2Te3/Si2Te3@Si nanowire heterojunction has had both Si2Te3Nanowire characteristics and Si nanowire characteristics, and preparation process is simply controllable, it is reproducible.
Description
Technical field
The present invention relates to field of nanometer material technology, and in particular to a kind of Si2Te3/Si2Te3@Si nanowire heterojunction and its system
Preparation Method.
Background technique
Si2Te3Nano material is a kind of novel silicon base chalcogenide, can be applied to photodetection, thermoelectricity, LED and
The fields such as phase change memory.Document [Nano Lett.2015,15 (4): 2285-2290] is prepared for Si using CVD method for the first time2Te3
Nanometer sheet and nanometer band structure, and having studied Li+And Mg2+Doping.Research shows that Si2Te3Have potentially in field of lithium
Application prospect.Document [Chem.Mater.2017,29 (8): 3723] theoretically shows the Si of n doping2Te3With preferable heat
Electrical property has potential application prospect in thermoelectricity field of storage.Document [Journal of Materials Science:
Materials in Electronics, 2018,29:15043] Si is prepared for using CVD method for the first time2Te3Nanowire structure.
Document [AIP Advances 2018,8:125008] has studied Si2Te3The electric property of nano wire, result of study show
Si2Te3Nano wire has phase change memory performance, has potential application prospect in field of storage.And show Si2Te3Nanometer material
Expect with important application prospects in photodetection, energy stores and phase transition storage etc..The above research is all shown
Si2Te3Nano material all has potential application prospect in fields such as photodetection, lithium battery, thermoelectricity, phase change memories.
Although these documents are prepared for Si2Te3Different nanostructures, including nanometer sheet, nanobelt and nano wire.But it makes
Standby one kind has both Si2Te3The Si of nanowire characteristics and Si nanowire characteristics2Te3/Si2Te3@Si nanowire heterojunction structure is so far
It has not been reported.Therefore, research and development prepare a kind of simple Si2Te3/Si2Te3Before@Si nanowire heterojunction has good application
Scape.
Summary of the invention
For the technical problems in the prior art, the purpose of the present invention is to provide a kind of Si2Te3/Si2Te3@Si
Nanowire heterojunction and preparation method thereof.To achieve the goals above, the technical scheme adopted by the invention is as follows:
A kind of Si2Te3/Si2Te3@Si nanowire heterojunction, Si2Te3/Si2Te3@Si nanowire heterojunction is by two parts group
At: top is Si2Te3Nano wire is in coniform, length 10um；Trunk is Si2Te3/ Si composite nanowire structure, diameter are
300nm, length 50um.
A kind of Si2Te3/Si2Te3@Si nanowire heterojunction the preparation method is as follows:
It (1) first will be in tellurium powder and silicon powder merging ceramic crucible；
(2) ceramic crucible of step (1) is put into quartz tube furnace；
(3) the silica/silicon substrate containing gold particle is placed on downstream place in quartz tube furnace；
(4) quartz tube furnace is evacuated to < 0.1mTorr, and be purged with nitrogen, until the air in quartz tube furnace is arranged
Except clean, then adjust the vacuum degree and carrier gas flux in quartz tube furnace；
(5) by quartz tube furnace in 20 DEG C of min-1Under be heated to 850 DEG C after stop heating, and kept for 3-5 minute, then will served as a contrast
Bottom is rapidly cooled to room temperature.
Preferably, the tellurium powder is 300 mesh, and purity 99.997%, quality is 100 milligrams；The silicon powder is 325 mesh,
Purity is 99%, and quality is 100 milligrams.
Preferably, in step (2), the ceramic crucible is put into the middle position of the quartz tube furnace.
Preferably, in step (3), the silica/silicon substrate containing gold particle is placed among quartz tube furnace
At the 10cm of position downstream.
Preferably, in step (4), vacuum degree is 9.8Torr, carrier gas flux 15sccm in quartz tube furnace.
The invention has the following advantages that
1. the present invention prepares resulting Si2Te3/Si2Te3@Si nanowire heterojunction has had both Si2Te3Nanowire characteristics and
Si nanowire characteristics.It is with a wide range of applications in fields such as silicon-based photoelectric device, phase change memory, thermoelectricity.
2. preparation process is simply controllable, reproducible, the parameters systems such as refining temperature, vacuum degree, air velocity can be passed through
It is standby to obtain Si2Te3/Si2Te3@Si nanowire heterojunction, the novel in shape of product.
Detailed description of the invention
Fig. 1 is the Si that the embodiment of the present invention 1 synthesizes2Te3/Si2Te3Scanning electron microscope (SEM) figure of@Si nanowire heterojunction.
Fig. 2 is the Si that the embodiment of the present invention 1 synthesizes2Te3/Si2Te3The partial sweep Electronic Speculum of@Si nanowire heterojunction
(SEM) figure.
Fig. 3 is the Si that the embodiment of the present invention 1 synthesizes2Te3/Si2Te3X-ray diffraction (XRD) figure of@Si nanowire heterojunction
Spectrum.
Fig. 4 is the Si that the embodiment of the present invention 1 synthesizes2Te3/Si2Te3The Raman spectrogram of@Si nanowire heterojunction.
Fig. 5 is the Si that the embodiment of the present invention 1 synthesizes2Te3/Si2Te3The element line distribution map of@Si nanowire heterojunction.
Fig. 6 is the Si that the embodiment of the present invention 2 synthesizes2Te3The TEM of nano wire schemes.
Fig. 7 is the Si that the embodiment of the present invention 3 synthesizes2Te3The TEM of nanometer sheet schemes.
Specific embodiment
A kind of Si to further describe the present invention2Te3/Si2Te3@Si nanowire heterojunction and preparation method thereof, below
It is described further in conjunction with attached drawing.
Embodiment 1
1.1 by 300 mesh, purity 99.997%, the tellurium powder and 325 mesh, purity 99%, quality that quality is 100 milligrams
It is placed in ceramic crucible for 100 milligrams of silicon powders；
1.2 will be put into middle position in quartz tube furnace equipped with tellurium powder and silicon powder crucible；
1.3 are placed on the silica/silicon substrate containing gold particle at the downstream 10cm of quartz tube furnace middle position；
Quartz tube furnace is evacuated to < 0.1mTorr by 1.4, and is purged with nitrogen, until the air in quartz tube furnace is arranged
9.8Torr is modulated except clean, then by the vacuum degree in quartz tube furnace, carrier gas flux is adjusted to 15sccm；
1.5 by quartz tube furnace in 20 DEG C of min-1Under be heated to 850 DEG C, stop heating, and kept for 3-5 minute, then will serve as a contrast
Bottom is rapidly cooled to room temperature to get Si2Te3/Si2Te3@Si nanowire heterojunction, figure it is seen that products obtained therefrom Si2Te3/
Si2Te3@Si nanowire heterojunction consists of two parts: being located at top Si2Te3Nanometer cone length is about 10um；Trunk
Si2Te3@Si nanowire diameter is about 300nm；Length is about 50um.Fig. 3 is the X-ray diffraction of the 1 gained sample of case study on implementation
Map, from map as can be seen that obtained sample is Si2Te3It is constituted with Si nano wire.Fig. 4 is the 1 gained sample of case study on implementation
Raman spectrogram, from Raman spectrum as can be seen that sample contains Si2Te3With two kinds of materials of Si.Fig. 5 is 1 institute of case study on implementation
The distribution diagram of element of sample is obtained, as can be seen from the figure sample top is Si2Te3, and the core of trunk is Si nano wire, outer layer is
Si2Te3, form Si2Te3/ Si core-shell structure.
Embodiment 2
2.1 by 300 mesh, purity 99.997%, the tellurium powder and 325 mesh, purity 99%, quality that quality is 100 milligrams
It is placed in ceramic crucible for 100 milligrams of silicon powders；
2.2 will be put into middle position in quartz tube furnace equipped with tellurium powder and silicon powder crucible；
2.3 are placed on the silica/silicon substrate containing gold particle at the downstream 10cm of quartz tube furnace middle position；
Quartz tube furnace is evacuated to < 0.1mTorr by 2.4, and is purged with nitrogen, until the air in quartz tube furnace is arranged
12Torr is modulated except clean, then by the vacuum degree in quartz tube furnace, carrier gas flux is adjusted to 10sccm；
2.5 by quartz tube furnace in 20 DEG C of min-1Under be heated to 850 DEG C, stop heating, and kept for 3 minutes, then by substrate
Room temperature is rapidly cooled to get Si2Te3Nano wire, as shown in Figure 6.
Embodiment 3
3.1 by 300 mesh, purity 99.997%, the tellurium powder and 325 mesh, purity 99%, quality that quality is 100 milligrams
It is placed in ceramic crucible for 100 milligrams of silicon powders；
3.2 will be put into middle position in quartz tube furnace equipped with tellurium powder and silicon powder crucible；
3.3 are placed on the silica/silicon substrate without containing gold particle apart from quartz tube furnace middle position downstream 10cm
Place；
Quartz tube furnace is evacuated to < 0.1mTorr by 3.4, and is purged with nitrogen, until the air in quartz tube furnace is arranged
9-12Torr is modulated except clean, then by the vacuum degree in quartz tube furnace, carrier gas flux is adjusted to 5-15sccm；
3.5 by quartz tube furnace in 20 DEG C of min-1Under be heated to 850 DEG C, stop heating, and kept for 3-5 minute, then will serve as a contrast
Bottom is rapidly cooled to room temperature to get Si2Te3Nanometer sheet, as shown in Figure 7.
The above content is just an example and description of the concept of the present invention, affiliated those skilled in the art
It makes various modifications or additions to the described embodiments or is substituted in a similar manner, without departing from invention
Design or beyond the scope defined by this claim, be within the scope of protection of the invention.
Claims (6)
1. a kind of Si2Te3/Si2Te3@Si nanowire heterojunction, which is characterized in that Si2Te3/Si2Te3@Si nanowire heterojunction by
Two parts composition: top is Si2Te3Nano wire is in coniform, length 10um；Trunk is Si2Te3/ Si composite Nano knot
Structure, diameter 300nm, length 50um.
2. a kind of Si according to claim 12Te3/Si2Te3The preparation method of@Si nanowire heterojunction, which is characterized in that
Preparation method the following steps are included:
It (1) first will be in tellurium powder and silicon powder merging ceramic crucible；
(2) ceramic crucible of step (1) is put into quartz tube furnace；
(3) the silica/silicon substrate containing gold particle is placed on downstream place in quartz tube furnace；
(4) quartz tube furnace is evacuated to < 0.1mTorr, and be purged with nitrogen, until the air in quartz tube furnace is excluded dry
Only, vacuum degree and carrier gas flux in quartz tube furnace are adjusted then；
(5) by quartz tube furnace in 20 DEG C of min-1Under be heated to 850 DEG C after stop heating, and kept for 3-5 minutes, it is then that substrate is fast
Speed is cooled to room temperature.
3. a kind of Si according to claim 22Te3/Si2Te3The preparation method of@Si nanowire heterojunction, which is characterized in that
The tellurium powder is 300 mesh, and purity 99.997%, quality is 100 milligrams；The silicon powder is 325 mesh, purity 99%, quality
It is 100 milligrams.
4. a kind of Si according to claim 22Te3/Si2Te3The preparation method of@Si nanowire heterojunction, which is characterized in that
In step (2), the ceramic crucible is put into the middle position of the quartz tube furnace.
5. a kind of Si according to claim 22Te3/Si2Te3The preparation method of@Si nanowire heterojunction, which is characterized in that
In step (3), the silica/silicon substrate containing gold particle is placed at the downstream 10cm of quartz tube furnace middle position.
6. a kind of Si according to claim 22Te3/Si2Te3The preparation method of@Si nanowire heterojunction, which is characterized in that
In step (4), vacuum degree is 9.8Torr, carrier gas flux 15sccm in quartz tube furnace.
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Citations (3)
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|---|---|---|---|---|
| CN102162135A (en) * | 2011-03-09 | 2011-08-24 | 中国科学院理化技术研究所 | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
| CN103882514A (en) * | 2014-02-28 | 2014-06-25 | 湖南大学 | Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof |
| KR101689276B1 (en) * | 2015-08-27 | 2016-12-26 | 서울대학교산학협력단 | Preparation method of hetero-junction metal nanowire and the hetero-junction metal nanowire thereby |
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- 2019-03-25 CN CN201910227594.2A patent/CN109950338B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162135A (en) * | 2011-03-09 | 2011-08-24 | 中国科学院理化技术研究所 | Preparation method of ZnS/Si nuclear-shell nanowires or nanobelts and polycrystal Si tubes |
| CN103882514A (en) * | 2014-02-28 | 2014-06-25 | 湖南大学 | Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof |
| KR101689276B1 (en) * | 2015-08-27 | 2016-12-26 | 서울대학교산학협력단 | Preparation method of hetero-junction metal nanowire and the hetero-junction metal nanowire thereby |
Non-Patent Citations (2)
| Title |
|---|
| KEYUE WU 等: "《Morphology control of Si2Te3 nanostructures synthesized by CVD》", 《JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS》 * |
| KEYUE WU 等: "《Risistive switching in Si2Te3 nanowires》", 《AIP ADVANCES》 * |
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